CN101724811A - Electromagnetic perfect absorber based on sub-wavelength metallic hole array - Google Patents
Electromagnetic perfect absorber based on sub-wavelength metallic hole array Download PDFInfo
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- CN101724811A CN101724811A CN200910243548A CN200910243548A CN101724811A CN 101724811 A CN101724811 A CN 101724811A CN 200910243548 A CN200910243548 A CN 200910243548A CN 200910243548 A CN200910243548 A CN 200910243548A CN 101724811 A CN101724811 A CN 101724811A
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Abstract
The invention relates to an electromagnetic perfect absorber based on a sub-wavelength metallic hole array. The electromagnetic perfect absorber is manufactured by the steps of: (1) selecting a quartz substrate and polishing the surface thereof; adopting vacuum evaporation to deposit a gold film with the thickness of being higher than 50 nanometers on the polished surface of the quartz substrate; (2)forming an SiO2 film with the thickness ranging from 35 to 45 nanometers on the surface of the gold film by evaporation, and uniformly coating a layer of photoresist on the SiO2 film; (3) by adopting the electron beam photoetching method, preparing a sub-wavelength medium column structure on the photoresist with the period thereof ranging from 235 to 245 nanometers and the dutyfactor ranging from 1:1.35 to 1:1.45; (4) adopting the vacuum evaporation process to form a gold film with the thickness ranging from 20 to 25 nanometers on the formed photoresist by evaporation; and (5) adopting a photoresist removing solution to remove the sub-wavelength medium column structure and the gold film formed thereon by evaporation, thereby accomplishing the preparation of the electromagnetic perfect absorber based on the sub-wavelength metallic hole array. The electromagnetic perfect absorber based on the sub-wavelength metallic hole array is characterized by simple preparation, low thickness and large incident angle, and has great application prospect in the fields of electromagnetic energy absorption, conversion, and the like.
Description
Technical field
The present invention relates to a kind of surface plasma coupled characteristic that utilizes the sub-wavelength metallic hole array structure, the design and the making of the artificial composite structure material that the electromagnetic perfect of realization visible light frequency band absorbs.
Technical background
Electromagnetic energy absorption is the prerequisite that energy obtains and changes, present electromagnetic energy absorption mainly is that the energy level transition of traditional material absorbs, the mechanism of its absorption is based on transition of electronic energy in the material, molecular entergy level vibration, current carrier energy level transition etc., these vibrations and transition can be converted into the electromagnetic energy of external radiation the electronic potential, molecular potential etc. of material internal, and finally be converted into can available signal, as heat, electromotive force etc.In these energy transformation, especially when external electric magnetic energy was converted into the potential energy of material internal, its efficiency of conversion was subjected to the restriction of material.Various defectives in the material of introducing in making processes can reduce assimilated efficiency.In addition, the absorbing wavelength and the scope of every kind of material are fixed, and have limited the adjustability of absorbing wavelength and bandwidth.
Summary of the invention
The problem to be solved in the present invention is: at the shortage of existing visible light frequency band electromagnetic absorber, a kind of surface plasma coupled characteristic that utilizes the sub-wavelength metallic hole array structure is proposed, the method for the artificial composite structure material that the electromagnetic perfect of realization visible light frequency band absorbs.
The technical solution adopted for the present invention to solve the technical problems is: a kind of electromagnetic perfect absorber based on sub-wavelength metallic hole array, and the making step of the described cartridge of its feature is as follows:
(1) select quartz substrate, and with its surface finish; Adopt vacuum evaporation then, the golden film that quartz substrate surface deposition one layer thickness after surface finish greater than 50 nanometers is;
(2) be the SiO of 35 nanometer to 45 nanometers at golden film surface evaporation one layer thickness
2Film, and at SiO
2Evenly apply one deck photoresist material on the film;
(3) method of employing beamwriter lithography is prepared sub-wavelength medium rod structure on photoresist material, and the cycle of described sub-wavelength medium rod structure is 235 nanometer to 245 nanometers, and dutycycle is 1: 1.35 to 1: 1.45;
(4) adopt vacuum evaporation technology, evaporation thickness is the golden film of 20 nanometer to 25 nanometers on molded photoresist material;
(5) adopt the liquid that removes photoresist, the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation, completes based on the electromagnetic perfect absorber of sub-wavelength metallic hole array.
Photoresist material in the described step (2) is the PMMA photoresist material that is used for electron beam lithography, and its thickness is 40 nanometer to 50 nanometers.
The present invention with compare the advantage that is had with the material of traditional realization electromagnetic absorption: the present invention is by the combination of each step in the technical scheme, adopt photoetching technique simultaneously, realized having the shape metal composite layer structure of special electromagnetic property, have simple for production, thickness is little, the characteristic that incident angle is big has great application prospect in fields such as electromagnetic energy absorption, conversions.
Description of drawings
Fig. 1 is the making synoptic diagram of the first step that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 2 is the second making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 3 is the 3rd making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 4 is the 4th making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 5 is the 5th making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Among the figure: 1 for the quartz substrate of surface finish; 2 is the golden film of evaporation; 3 is the SiO of evaporation
2Film; 4 for the PMMA electron beam resist of spin coating.
Embodiment
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and by following examples 1,2,3, those skilled in the art promptly can realize the full content of claim of the present invention.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 35 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 235 nanometer on photoresist material 4, and dutycycle is 1: 1.35 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 40 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 240 nanometer on photoresist material 4, and dutycycle is 1: 1.4 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 45 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 245 nanometer on photoresist material 4, and dutycycle is 1: 1.45 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
By the electromagnetic perfect absorber based on sub-wavelength metallic hole array of above method made, utilize the surface plasma coupled characteristic of sub-wavelength metallic hole array, be implemented in visible light frequency band, to the perfection absorption of electromagnetic radiation.Simulation result show by this absorption physical efficiency in each orientation absorption of electromagnetic radiation (the average absorption rate is greater than 90%) significantly.This cartridge is the absorption of electromagnetic radiation material that has minimal wave length at present, has simple for productionly simultaneously, and thickness is little, and the characteristic that incident angle is big has great application prospect in fields such as electromagnetic energy absorption, conversions.
The non-elaborated part of the present invention belongs to the known technology of this area.
Claims (2)
1. electromagnetic perfect absorber based on sub-wavelength metallic hole array, the making step of the described cartridge of its feature is as follows:
(1) select quartz substrate, and with its surface finish; Adopt vacuum evaporation then, the golden film that quartz substrate surface deposition one layer thickness after surface finish greater than 50 nanometers is;
(2) be the SiO of 35 nanometers-45 nanometer at golden film surface evaporation one layer thickness
2Film, and at described SiO
2Evenly apply one deck photoresist material on the film;
(3) method of employing beamwriter lithography is prepared sub-wavelength medium rod structure on photoresist material, and the cycle of described sub-wavelength medium rod structure is 235 nanometers-245 nanometers, and dutycycle is 1: 1.35-1: 1.45;
(4) adopt vacuum evaporation technology, evaporation thickness is the golden film of 20 nanometers-25 nanometer on molded photoresist material;
(5) adopt the liquid that removes photoresist, the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation, completes based on the electromagnetic perfect absorber of sub-wavelength metallic hole array.
2. a kind of electromagnetic perfect absorber based on sub-wavelength metallic hole array according to claim 1 is characterized in that: the photoresist material in the described step (2) is the PMMA photoresist material that is used for electron beam lithography, and its thickness is 40 nanometers-50 nanometers.
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| CN2009102435488A CN101724811B (en) | 2009-12-25 | 2009-12-25 | Electromagnetic perfect absorber based on sub-wavelength metallic hole array |
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| CN2009102435488A CN101724811B (en) | 2009-12-25 | 2009-12-25 | Electromagnetic perfect absorber based on sub-wavelength metallic hole array |
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| CN101724811B CN101724811B (en) | 2011-04-20 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
| CN106405697A (en) * | 2016-12-08 | 2017-02-15 | 中国科学院光电技术研究所 | Dynamically-adjustable multi-frequency electromagnetic wave-absorbing material |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN107121715A (en) * | 2017-04-12 | 2017-09-01 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber of large-area wide incidence angle based on coupling Michaelis resonance and preparation method thereof |
| CN112834633A (en) * | 2020-12-28 | 2021-05-25 | 北京杰宇广谱科技有限公司 | Fast hydrocarbon composition analyzer |
-
2009
- 2009-12-25 CN CN2009102435488A patent/CN101724811B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
| CN106405697A (en) * | 2016-12-08 | 2017-02-15 | 中国科学院光电技术研究所 | Dynamically-adjustable multi-frequency electromagnetic wave-absorbing material |
| CN106405697B (en) * | 2016-12-08 | 2019-06-25 | 中国科学院光电技术研究所 | A kind of adjustable multifrequency electromagnetic-wave absorbent of dynamic |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN107121715A (en) * | 2017-04-12 | 2017-09-01 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber of large-area wide incidence angle based on coupling Michaelis resonance and preparation method thereof |
| CN107121715B (en) * | 2017-04-12 | 2019-08-23 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber and preparation method thereof based on coupling Michaelis resonance |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN112834633A (en) * | 2020-12-28 | 2021-05-25 | 北京杰宇广谱科技有限公司 | Fast hydrocarbon composition analyzer |
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|---|---|
| CN101724811B (en) | 2011-04-20 |
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