CN111653635B - Graphene plasmon multiband absorber and preparation method thereof - Google Patents
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- CN111653635B CN111653635B CN202010135101.5A CN202010135101A CN111653635B CN 111653635 B CN111653635 B CN 111653635B CN 202010135101 A CN202010135101 A CN 202010135101A CN 111653635 B CN111653635 B CN 111653635B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 83
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000002356 single layer Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a graphene plasmon multiband absorber and a preparation method thereof, and belongs to the field of photoelectric materials. The absorber is sequentially provided with a metal substrate layer and single-layer graphene from bottom to top, and inclined air groove arrays are distributed on the upper surface of the metal substrate to form a one-dimensional metal grid structure. The inclined air groove array on the metal substrate generates a highly concentrated plasma field, and simultaneously enhances the coupling effect of the graphene field and electromagnetic waves, so that multiband ultra-narrow perfect light absorption is formed. The graphene layer of the multiband absorber is composed of complete single-layer graphene, has a simple structure, is easy to manufacture, has tunable infrared band spectrum and small structural size, is easy to integrate, and can be widely applied to the fields of photoelectric sensing and photoelectric regulation.
Description
Technical Field
The invention belongs to the field of photoelectric materials, and particularly relates to an absorber and a preparation method thereof.
Background
With the rapid development of modern science and technology, structures with novel optical characteristics and highly tunable methods are increasing on the nanometer scale, which is of great interest. In recent years plasmonic metal nanostructures have received widespread attention due to their local field enhancement and coupling of strong optical fields to illumination light. These properties ultimately lead to the continued emergence of potential applications in perfect and graphene-related near-perfect absorbers, solar collection, thermal evaporation techniques, surface enhanced spectroscopy, and sensing. However, graphene optoelectronic devices often involve numerous structural elements and modules, as well as different graphene patterns, which results in difficult fabrication, high cost, and unfavorable large-scale fabrication and utilization of the graphene devices.
Graphene (Graphene) is a cellular planar film formed from a single layer of carbon atoms, which has only one atomic layer thickness of quasi-two-dimensional material, also known as monoatomic layer graphite. Graphene has very good electric conduction, heat conduction, mechanical strength, flexibility and optical characteristics, and has been developed in fields of physics, materials science, electronic information, computers, aerospace and the like. The conduction electrons on the surface of the graphene can interact with incident photons to form a coupled electromagnetic mode (namely plasmon resonance), and can break through the traditional optical diffraction limit, so that the graphene can be used as an information carrier in an optical transmission device, including an optical coupling device. However, the absorbance of the single-layer graphene structure for visible light and infrared band light is only 2.3%. The current research technology has great technical problems in the aspects of effectively regulating and controlling the spectral response characteristics of the graphene structure to light waves or electromagnetic waves, including the controllable operation of the graphene structure in spectral notch response of different frequency bands, and the like.
Compared with the traditional photoelectric device, the graphene photoelectric device has small structure size, and the response of the device to electromagnetic waves can be tuned by changing the chemical potential of graphene, so that the graphene photoelectric device has excellent tunability.
Disclosure of Invention
The invention provides a graphene plasmon multiband absorber, a photoelectric regulation device thereof and a preparation method thereof, aiming at solving the problems of few absorption frequency bands, smaller frequency range, low absorption high rate and the like of the graphene absorber in the prior art.
The graphene plasmon multiband absorber comprises a metal substrate and a graphene layer, wherein the graphene layer is connected with the metal substrate; and the metal substrate is distributed with an inclined air groove array to form a one-dimensional metal gate structure.
Further, the graphene layer is a single-layer complete graphene.
Further, the inclined air groove array is formed by arranging inclined air grooves according to a period of 800 nanometers; the width and height of the air slot are 100 nm and 300 nm, respectively (the longest side of the inclined air slot is high, and the corresponding vertical side is wide); the inclination angle of the air groove is 45 o 。
Further, the thickness of the metal substrate is 400 nm.
Further, the metal substrate is made of gold.
The preparation method of the graphene plasmon multiband absorber comprises the following steps:
and 4, transferring the graphene manufactured in the step 3 to the upper surface of the metal substrate in the step 2 to obtain the graphene plasmon multiband absorber.
The invention has the beneficial effects that:
1. according to the graphene plasmon multiband absorber, the inclined air groove array on the metal substrate generates a highly concentrated plasma field, meanwhile, the coupling effect of the graphene field and electromagnetic waves is enhanced, and multiband and ultra-narrow perfect light absorption is generated in the infrared region;
2. the optical response of the device can be tuned by changing the chemical potential of the graphene, and the device has extremely excellent tuning performance;
3. the invention is insensitive to the incident angle of incident light, shows excellent absorption stability, and has strong inclusion on the incident angle in practical application;
4. the invention has simple structure and small structure size, and is beneficial to the system integration of the photoelectric device; the manufacturing process is simple, can be manufactured in a large scale, and can be widely applied to the fields of photoelectric sensing and photoelectric regulation.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings. However, the following drawings are merely schematic representations of idealized embodiments of the present invention in which the regions of features are appropriately exaggerated for the sake of clarity of presentation of the structures of the devices to which the present invention pertains, but which are employed as illustrations should not be construed to strictly reflect the geometric dimensional relationships. In addition, the illustrated embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated in the figures. In general, the following drawings are illustrative and should not be taken to limit the scope of the invention.
Fig. 1 is a schematic structural diagram of a graphene plasmonic multiband absorber according to the invention.
Fig. 2 is a light absorption diagram of a graphene plasmonic multiband absorber according to the invention. The thickness of the gold substrate is 400 nm; the period of the air groove on the upper surface of the gold substrate is 800 nm, the width and the height of the air groove are 100 nm and 300 nm respectively, and the inclination angle of the air groove is 45 o The method comprises the steps of carrying out a first treatment on the surface of the The chemical potential of graphene is 1.2 eV.
Fig. 3 is a graph showing the change of absorption light intensity with chemical potential of graphene at the absorption peak position of the graphene plasmon multiband absorber. The thickness of the gold substrate is 400 nm; the period of the air groove on the upper surface of the gold substrate is 800 nm, the width and the height of the air groove are 100 nm and 300 nm respectively, and the inclination angle of the air groove is 45 o 。
Fig. 4 is a light absorption diagram of a graphene plasmonic multiband absorber according to the invention. The thickness of the gold substrate is 400 nm; the period of the air groove on the upper surface of the gold substrate is 800 nm, the width and the height of the air groove are 100 nm and 300 nm respectively, and the inclination angle of the air groove is 45 o 。
Fig. 5 is a graph of light absorption at different angles of incidence for a graphene plasmonic multiband absorber according to the invention. The thickness of the gold substrate is 400 nm; the period of the air groove on the upper surface of the gold substrate is 800 nm, the width and the height of the air groove are 100 nm and 300 nm respectively, and the inclination angle of the air groove is 45 o 。
The reference numerals in fig. 1 explain: 1. metal substrate, 2, inclined air groove, 3, graphene layer.
Detailed Description
The graphene plasmon multiband absorber can be prepared according to the following steps:
and 4, transferring the graphene manufactured in the step 3 onto the metal substrate in the step 2 to obtain the graphene plasmon multiband absorber. The transfer method is at least one of a matrix etching transfer method, a roll-to-roll transfer method, an electrochemical stripping transfer method, a dry transfer method and a mechanical stripping transfer method.
As shown in FIG. 1, the prepared graphene plasmon multiband absorber is provided with a metal substrate and single-layer graphene from bottom to top, wherein an inclined air groove array is distributed on the upper surface of the metal substrate, and a one-dimensional metal gate structure is formed.
The technical scheme of the invention is described in detail below with reference to a plurality of preferred embodiments and related drawings.
Example 1:
the graphene plasmon multiband absorber of the embodiment is formed by sequentially arranging a metal substrate and single-layer graphene from bottom to top, wherein inclined air groove arrays are distributed on the upper surface of the metal substrate, and a one-dimensional metal gate structure is formed. The thickness of the gold substrate is 400 nm; the period of the air groove on the upper surface of the gold substrate is 800 nm, the width and the height of the air groove are 100 nm and 300 nm respectively, and the inclination angle of the air groove is 45 o The method comprises the steps of carrying out a first treatment on the surface of the The chemical potential of graphene is 1.2 eV.
Referring to fig. 2, fig. 2 is a light absorption diagram of the graphene plasmonic multiband absorber according to the present embodiment. As can be seen from the figure, the embodiment has three absorption peaks with absorption approaching 100%λ 1 -λ 3 ）。
FIG. 5 is a graph showing the reflection of light at different angles of incidence for the absorber of this embodiment, as can be seen from the graph, at different angles of incidence (0-20 o ) The electromagnetic wave absorption effect is not greatly different. For example, the incident angle is from 0 o Change to 20 o ，λ 2 The absorption intensity of the absorption peak is only 8%, so that the absorption peak has excellent absorption stability and has strong inclusion on the incident angle in practical application.
Example 2:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.15.
Example 3:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.16.
Example 4:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.17.
Example 5:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.18.
Example 6:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.19.
Example 7:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 1.21.
Fig. 3 shows that the absorption intensity of the absorbers of examples 1 to 7 at the peak position changes with the fermi level of graphene, and it can be seen that all three absorption peaks can tune the absorption intensity by changing the fermi level of graphene, for example, only changing the fermi level of graphene by 0.03 eV,λ 3 the intensity of the absorption peak is enhanced by 82%, and extremely excellent tunability is exhibited. The high absorption change ratio can show the absorption conversion process between the 'off' state and the 'on' state, and has a great improvement over other ionic graphene switches in terms of the intensity change ratio and the sensitivity to fermi energy, and has a wide application prospect in the field of optical switches.
Example 8:
this example is basically the same as example 1, and the chemical potential of graphene is changed to 1.0.
Example 9:
this example was substantially the same as example 1, and the chemical potential of graphene was changed to 0.8.
Example 10:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 0.6.
Example 11:
this example is substantially the same as example 1, and the chemical potential of graphene is changed to 0.4.
Fig. 4 shows the light absorption diagrams of the absorbers of examples 1, 8-11 at different graphene fermi levels, and it can be seen that the three absorption peaks can all be tuned in absorption intensity by changing the fermi level of graphene. As the graphene fermi level increases, each absorption peak becomes stronger. It can be seen that the absorption intensity of each mode absorption peak can be adjusted by changing the fermi level of graphene, and the tunable photoelectric device has more excellent tuning performance than the conventional tunable photoelectric device.
In summary, according to the graphene plasmon multiband absorber disclosed by the invention, the inclined air groove array on the metal substrate generates a highly concentrated plasma field, the coupling effect of the graphene field and electromagnetic waves is enhanced, and multiband ultra-narrow perfect light absorption is generated in the infrared region. Changing the fermi level of graphene can tune the optical response of the device, with superior tuning performance. Meanwhile, the light-absorbing material is insensitive to the incident angle of incident light, shows excellent absorption stability, and has strong inclusion on the incident angle in practical application. The invention has simple structure and small structure size, and is beneficial to the system integration of the photoelectric device; the manufacturing process is simple, can be manufactured in a large scale, and can be widely applied to the fields of photoelectric sensing and photoelectric regulation.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (4)
1. A graphene plasmon multiband absorber is characterized in that: the graphene structure comprises a metal substrate and a graphene layer, wherein the graphene layer is connected with the metal substrate; the metal substrate is distributed with an inclined air groove array to form a one-dimensional metal grid structure; the inclined air groove array is formed by arranging inclined air grooves according to a period of 800 nanometers; the width and height of the air slot are 100 nm and 300 nm respectively; the inclination angle of the air groove is 45 o The method comprises the steps of carrying out a first treatment on the surface of the The saidThe thickness of the metal substrate was 400 nm.
2. The graphene plasmonic multiband absorber of claim 1, wherein: the graphene layer is a single-layer complete graphene.
3. The graphene plasmonic multiband absorber of claim 2, wherein: the metal substrate is made of gold.
4. The method of preparing a graphene plasmonic multiband absorber according to claim 1, comprising the steps of:
step 1, providing a metal substrate and a silicon wafer;
step 2, etching an inclined air groove array on the upper surface of the metal substrate by using an etching technology;
step 3, manufacturing a layer of graphene on a silicon wafer by using a chemical vapor deposition method;
and 4, transferring the graphene manufactured in the step 3 to the upper surface of the metal substrate in the step 2 to obtain the graphene plasmon multiband absorber.
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