CN101718952A - Method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory - Google Patents
Method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory Download PDFInfo
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- CN101718952A CN101718952A CN200910243534A CN200910243534A CN101718952A CN 101718952 A CN101718952 A CN 101718952A CN 200910243534 A CN200910243534 A CN 200910243534A CN 200910243534 A CN200910243534 A CN 200910243534A CN 101718952 A CN101718952 A CN 101718952A
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Abstract
The invention discloses a method for preparing a composite membrane layer with a multilayer embossment structure based on a mobile coding mask theory. The method is characterized by comprising the following steps of: obtaining a corresponding mask opening function by a thickness distribution function of a prepared membrane layer, and confirming the shape and the geometric dimensioning of the mask opening; preparing the openings periodically on the mask along a mask moving direction; moving the mask during membrane precipitation, and controlling membrane thickness distribution of each precipitation area of the membrane by the shape and the geometric dimensioning of the mask; and repeating the previous steps, therefore, a multilayer embossment structure membrane layer with different materials and thicknesses can be continuously precipitated through changing the mask and the membrane. By combining the mobile mask technology and the oriented precipitation technology, one layer or multilayer embossment structure membrane layer with predetermined thickness distribution can be obtained by direct precipitation on a substrate without complicated process steps of exposure, etching and the like.
Description
Technical field
The present invention relates to a kind of method for making of non-uniform thickness film, relate in particular to a kind of prepare based on mobile coding mask theory little/receive the method for composite membrane layer with multilayer embossment structure of yardstick.
Technical background
Little/the element of receiving is especially little/receive optical element, all have huge application potential in scientific research, military affairs, field such as civilian, and for example, be applied to make aspects such as various SPPs components and parts, optical storage of data, super-resolution imaging, SPPs nano-photoetching.Little/the preparation of element received that comprises composite membrane layer with multilayer embossment structure is the difficult point of research.Existing method for making can etch the rete of individual layer embossment structure or the rete of deposit multilayer uniform thickness, but is difficult to the raised compound film of preparation multilayer non-uniform thickness.If can make the raised compound film of multilayer non-uniform thickness, just can produce many be difficult at present the labyrinth made little/receive optical element.
Little/preparation method of element of receiving mainly is divided into two classes, and the first kind is the ultraprecise Machining Technology, mainly is to utilize the Tool in Cutting material surface to make it reach desired shape.As diamond lathe etc., be fit to processing individual layer embossment structure, but its shortcoming is to prepare some symmetrical rotary surfaces; Can only prepare the individual layer embossment structure at present; Energy material processed kind is confined to the material of some good mechanical properties.Second class is optics job operations such as electron beam/particle beams/laser direct-writing technology, photoetching technique, lithographic technique.The advantage of optics job operation is to process irregular structure, and shortcoming is little/micro-nano structure that the thicknesses of layers error that the processing technology step is various, etching causes is big, be difficult to prepare the multilayer non-uniform thickness.
For example adopt modes such as binary optical technique, mobile mask in gray scale photoetching technique all can make micron or the individual layer of submicron-scale little/receive embossment structure; But these mask lithography methods need be carried out numerous and diverse steps such as plated film, gluing, exposure, development, etching, especially need could be difficult to the etching depth of thin rete of accurately control with figure transfer to substrate by etching.That direct writing technologies such as direct electronic beam writing technology, laser beam direct writing technology, focused particle beam processing can directly or indirectly etch at material surface is little/receive embossment structure.If prepare the multilayer composite membrane layer with multilayer embossment structure with these technology, processing cost is very high and working (machining) efficiency is low; Repeatedly carry out technologies such as plated film, exposure and etching, especially on existing embossment structure rete, carry out above technology, the appearance structure of its lower floor's rete can have a strong impact on the gluing of subsequent film, the quality of exposure, bring very large thickness error can for undoubtedly the preparation of subsequent film, repeatedly repeat etching and then can further amplify this error.
One slightly/element of receiving is especially little/receive optical element, needs the rete of stack multilayer non-uniform thickness, and the rete for preparing the multilayer non-uniform thickness at present remains a difficult problem.Therefore, the method for making of multilayer non-uniform thickness film has very big application valency letter.
In sum, up to the present, also there is not the job operation that a kind of technology is simple, be adapted at the raised compound film of direct deposit multilayer non-uniform thickness in the substrate.
Summary of the invention
Technology of the present invention is dealt with problems: overcomes the deficiencies in the prior art, provides a kind of and prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory,
Technical solution of the present invention: prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory, may further comprise the steps:
(1) according to made little/receive the interface function of each tunic layer of element, obtain the thickness distribution function of each tunic layer, i.e. each regional thickness of each tunic layer; Described little/each the tunic layer of element received is the rete with continuous relief structure or many steps embossment structure or uniform thickness;
(2), determine the shape and the physical dimension of the mask perforate that this rete is used, the mask perforate that the direction that moves along mask periodically prepares this shape and physical dimension according to the thickness distribution function of each concrete rete; Described mask perforate is can be by the through hole of deposited particles; The thicknesses of layers of the each point of described rete on the straight line that is parallel to the mask moving direction is identical;
(3) mask and substrate parallel are placed, made mask substrate uniform translation relatively;
(4) by the mask perforate with stable speed to substrate orientated deposition coating materials, and in deposition process the uniform translation mask, and the distance of mask uniform translation is the integral multiple in mask perforate cycle; By the thickness that the shape and the physical dimension of mask perforate are modulated each area deposition on the substrate, obtain the individual layer embossment structure rete of predetermined thickness profile;
(5) repeating step (1)-(4), the individual layer embossment structure rete of predetermined coating materials kind of successive sedimentation several layers and thickness distribution just can obtain composite membrane layer with multilayer embossment structure on substrate.
The thickness distribution function of each the tunic layer in the described step (1) for this is little/receive each tunic layer of element perpendicular to the thickness distribution function on the direction of base plane, numerical value is the difference of the upper and lower interface of each tunic layer: if establish the thickness distribution function of i tunic layer is f (x), and the upper bound surface function of i tunic layer is z
i(x), (i=1,2,3 ..., n) (n is the rete quantity of multilayer embossment structure), the function at the last interface of substrate is z
0(x)=0, the following interface of i tunic layer is exactly the last interface of i-1 tunic layer, then f (x)=z
i(x)-z
I-1(x), promptly the numerical value of the thickness distribution function f (x) of i tunic layer equals the upper bound surface function z of i tunic layer
i(x) deduct the upper bound surface function z of i-1 tunic layer
I-1(x).
Shape along the mask perforate of mask moving direction period profile in the described step (2) is all identical with physical dimension, and the cycle of mask perforate is greater than the maximum height of single perforate on the mask moving direction.
Substrate in the described step (3) is ultraviolet light material, visible light material or infra-red material.
Mask in the described step (3) does not all contact with on-chip embossment structure when static and mobile, and the distance of mask and substrate is 500 nanometers to 500 micron.
Mask in the described step (3) at the uniform velocity moves to one dimension moves with respect to substrate, is at the uniform velocity mobile substrate of the at the uniform velocity mobile mask of direction arranged of mask perforate or opposite direction along the predetermined mask moving direction.
The method of orientated deposition is electron beam evaporation plating, hot evaporation or laser deposition in the described step (4).
The coating materials of orientated deposition is silver, copper, aluminium, chromium, gold, silicon dioxide, silicon, glass, gallium arsenide, gallium nitride or aluminium oxide in the described step (4).
Respectively be parallel on the substrate in the described step (4) on the thicknesses of layers that deposits on the straight line of Y direction and the mask over against the perforate of this straight line g (x highly
i) be directly proportional, i.e. f (x)=kg (x), wherein k is a constant.
When the thickness distribution of each layer embossment structure rete is identical or proportional in the described step (5), the mask of employing have identical mask perforate or the mask perforate proportional at the height of Y direction; The thickness distribution of different retes is inequality and when disproportionate, then uses the mask of different perforates.
The present invention's advantage compared with prior art is:
(1) the present invention combines mobile mask technique and craft of orientated deposition techniques, deposition during coating materials at the uniform velocity mobile mask come the thickness distribution of the rete of deposition is modulated, preparation process does not need various steps such as gluing, photoetching, development, etching for the embossment structure rete that directly deposition obtains wanting in substrate, thus reduced greatly rete thickness error, improved the preparation speed of element; And have advantages such as direct depositional texture rete, process-cycle are short, the graphics processing error is little, help the little/actual popularization and engineering of element received and use.
(2) the present invention does not need through processing steps such as gluing, exposure, etchings, thereby avoided the adverse effect of the out-of-flatness surface of lower floor's embossment structure rete to subsequent process steps such as gluing, exposure, etchings, reduced the thickness of follow-up embossment structure rete and the error of thickness distribution aspect, this has reduced the difficulty of preparation composite membrane layer with multilayer embossment structure.
(3) method of the present invention's deposition is hot evaporation, electron beam evaporation plating or laser deposition, can deposit multiple metal, nonmetallic materials more conveniently.
Description of drawings
Fig. 1 is that the composite membrane layer with multilayer embossment structure that will prepare among the present invention reaches the wherein sectional view of skim layer;
Fig. 2 derives the thickness distribution of this rete and the perforate profile of corresponding mask by the upper and lower interface function of any one deck rete among the present invention, wherein figure top is divided into the sectional view on this rete XZ plane, the figure center section is the thickness distribution of this rete on the XZ plane, and the figure bottom is divided into the used perforate profile of mask on the XY plane of this rete of deposition;
Fig. 3 is the cycle mask of making according to mask perforate function among the present invention, and wherein white portion is represented the mask perforate, and black region is represented photomask substrate, and the arrow direction is the mask moving direction among the figure;
Fig. 4 is the synoptic diagram of mask mobile system among the present invention, and mask places on the mask mobile platform that is parallel to substrate, can move relative to substrate is parallel;
Mask moves the embossment structure rete of one deck non-uniform thickness of deposition synoptic diagram and preparation thereof among Fig. 5 the present invention, and the white arrow direction is the mask moving direction among the figure, and black arrow is an evaporation particle bundle deposition direction;
The structural representation of the composite membrane layer with multilayer embossment structure of making among Fig. 6 the present invention;
Among the figure: 1 multilayer non-uniform thickness rete for the desire preparation; 2 is a non-uniform thickness rete; 3 for the substrate of surface finish; 4 is mobile mask; 5 is the mask perforate; 6 is the deposited particles bundle; 7 individual layer embossment structure retes for deposition; 8 composite membrane layer with multilayer embossment structure for deposition.
Embodiment
Before elaborating the present invention, earlier the relation between the thickness distribution of mask perforate and depositional coating among the present invention is described.
The height of mask perforate refers to that perforate is the height g (x of Y direction at moving direction
i); On-chip each point only be in the mask perforate under the time could deposited particles, so effective sedimentation time of each point is the time (hereinafter to be referred as exposure duration) that this point is exposed to the mask perforate on the substrate; When mask along Y direction mobile perforate cycle (l at the uniform velocity
p) integral multiple (N l
p) apart from the time, any straight line that is parallel to the Y direction is (as x=x on the substrate plane
i) on the distance that moves relative to mask of each point be that N cycle is N l
p, it highly is Ng (x that the distance that wherein is exposed to the mask perforate is N corresponding perforate
i), to be the distance that is exposed to perforate be Ng (x divided by the mask rate travel each point exposure duration on this straight line
i)/v, the thickness of each spot deposition is exposure duration to multiply by the coating materials rate of sedimentation on this straight line, is Ng (x
i) u/v.Therefore, each bar is parallel on the thickness that deposits on the straight line of Y direction and the mask perforate height g (x over against this straight line on the substrate
i) be directly proportional.
Along the relative substrate uniform translation of Y direction, the distance that moves behind time t is N cycle l to mask with speed v
p, during this period of time the rate of sedimentation of coating materials is constant, then any one is parallel on the one dimension zone of Y direction arbitrarily a bit that coating materials thickness f (x) of deposition is on the substrate:
Utilize above formula, can also be by the anti-mask perforate function g (x) that releases of thicknesses of layers distribution function f (x)=Ng (x) u/v:
g(x)＝vf(x)/(Nu)
If N, u, v are all known, establish v/ (Nu)=k (for constant), then mask perforate function g (x) can be reduced to the relation of thicknesses of layers distribution function f (x):
g(x)＝kf(x)
Wherein: g (x): mask perforate function; F (x): thicknesses of layers function; V: mask translational speed; U: coating materials sedimentation velocity; N: the periodicity that moves during deposition (positive integer); l
p: the Cycle Length of moving direction; T: traveling time.
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and promptly can realize the full content of claim of the present invention to those skilled in the art by following examples.
Embodiment 1, makes the super lens of a micron order size, and 8 microns of its width, 200 microns of length are made up of the 1st, 3 layer of silver and the 2nd layer of silicon dioxide embossment structure rete, and its manufacturing process is as follows:
(1) as shown in Figure 1, determine the interface function of its each rete according to the structure of the super lens that will prepare; If the upper bound surface function of i tunic layer is z
i(x), (i=1,2,3,4), the function at interface is z in the substrate
0(x)=0; The following interface of i tunic layer is exactly the last interface of i-1 tunic layer, therefore the lower bound surface function of i tunic layer and the upper bound surface function z of i-1 tunic layer
I-1(x) equate;
The thickness distribution function f of i tunic layer then
i(x) be: the upper bound surface function z of i tunic layer
i(x) deduct the upper bound surface function z of i-1 tunic layer
I-1(x), i.e. f
i(x)=z
i(x)-z
I-1(x);
If z
1(x)=0.01 (4+x) (4-x), (4≤x≤4, x and z
1(x) unit is micron), z
2(x)=0.01 (5+x) (5-x), (4≤x≤4, x and z
2(x) unit is micron), z
3(x)=0.01 (6+x) (6-x), (4≤x≤4, x and z
3(x) unit is micron);
The thickness distribution function f of first tunic then
1(x)=z
1(x)-z
0(x)=0.01 (4+x) (4-x)-0=0.01 (4+x) (4-x) (4≤x≤4, x and z
1(x) unit is micron).
(2) as shown in Figure 2, obtain the thickness distribution function f (x) of this rete and be used to prepare the perforate function g (x) of the mobile mask of this rete according to the interface function calculation of any rete, wherein thickness distribution function f (x) is the distribution function of difference on base plane of this rete upper and lower interface, mask perforate function is by formula g (x)=vf (x)/(Nu) calculate, thereby determined the shape and the physical dimension of this mask perforate; The little meter per second of v=0.1 wherein, N=5, the little meter per second of u=0.001 can get g
1(x)=20f (x)=0.2 (4+x) (4-x), the maximum height g of this mask perforate wherein
1max(x)=g
1maxMicron (0)=3.2.
(3) as shown in Figure 3, be the periodically designed mask perforate of preparation process 2 of Y direction at mask upper edge mask moving direction, the cycle of mask perforate is 6 microns, the mask moving direction is the arrow direction;
(4) as shown in Figure 4, mask is placed on the mask mobile platform that is parallel to substrate, the distance of mask distance substrate is 10 microns, relatively the substrate uniform translation;
(5) perpendicular to substrate orientated deposition silver or silicon dioxide, mask is at the uniform velocity mobile along the Y direction in the coating materials deposition process with the little meter per second of constant speed u=0.001 for the usefulness electron beam evaporation methods, and displacement is promptly 30 microns of 5 mask perforate cycles; Control the thickness of each area deposition on the substrate by the physical dimension of mask perforate, obtaining the thickness distribution function is f
1(x) ground floor silver film; The white arrow direction is the mask moving direction among Fig. 5, and black arrow gets deposition direction for the evaporation particle bundle;
(6) repeating step (1)-(5) by changing mask and deposition raw material, from substrate up silver, silicon dioxide, the silver-colored embossment structure rete of alternating deposit predetermined thickness profile, obtain the super lens that need.
(1) determines the interface function of its each rete according to the structure of the super lens that will prepare; If the upper bound surface function of i tunic layer is z
i(x), (i=1,2,3,4), the function at interface is z in the substrate
0(x)=0; The following interface of i tunic layer is exactly the last interface of i-1 tunic layer, therefore the lower bound surface function of i tunic layer and the upper bound surface function z of i-1 tunic layer
I-1(x) equate;
The thickness distribution function f of i tunic layer then
i(x) be: the upper bound surface function z of i tunic layer
i(x) deduct the upper bound surface function z of i-1 tunic layer
I-1(x), i.e. f
i(x)=z
i(x)-z
I-1(x);
If z
1(x)=0.01 (8+x) (8-x), (8≤x≤8, x and z
1(x) unit is micron), z
2(x)=0.01 (11+x) (11-x), (8≤x≤8, x and z
2(x) unit is micron), z
3(x)=0.01 (13+x) (13-x), (8≤x≤8, x and z
3(x) unit is micron), f
4(x)=1.8, (8≤x≤8, x and f
4(x) unit is micron);
The thickness distribution function f of first tunic then
1(x)=z
1(x)-z
0(x)=0.01 (8+x) (8-x)-0=0.01 (8+x) (8-x) (8≤x≤8, x and z
1(x) unit is micron).
(2) obtain the thickness distribution function f (x) of this rete according to any interface function calculation of rete and be used to prepare the perforate function g (x) of the mobile mask of this rete, wherein thickness distribution function f (x) is the distribution function of difference on base plane of this rete upper and lower interface, mask perforate function is by formula g (x)=vf (x)/(Nu) calculate, thereby the shape and the physical dimension of this mask perforate have been determined, the little meter per second of v=0.2 wherein, N=10, the little meter per second of u=0.002 can get g
1(x)=20f (x)=0.2 (8+x) (8-x), the maximum height g of this mask perforate wherein
1max(x)=g
1maxMicron (0)=6.4.
(3) be the periodically designed mask perforate of preparation process 2 of Y direction at mask upper edge mask moving direction, the cycle of mask perforate is 15 microns, and the mask moving direction is the arrow direction;
(4) mask is placed on the mask mobile platform that is parallel to substrate, the distance of mask distance substrate is 10 microns, relatively the substrate uniform translation;
(5) perpendicular to substrate orientated deposition silver or silicon dioxide, mask is at the uniform velocity mobile along the Y direction in the coating materials deposition process with the little meter per second of constant speed u=0.001 for the usefulness electron beam evaporation methods, and displacement is promptly 150 microns of 10 mask perforate cycles; Control the thickness of each area deposition on the substrate by the physical dimension of mask perforate, obtaining the thickness distribution function is f
1(x) ground floor silver film;
(6) repeating step (1)-(5) by changing mask and deposition raw material, from substrate up silver, alundum (Al, silver, the alundum (Al embossment structure rete of alternating deposit predetermined thickness profile, obtain the lens that need.
Claims (10)
1. prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory, it is characterized in that may further comprise the steps:
(1) according to made little/receive the interface function of each tunic layer of element, obtain the thickness distribution function of each tunic layer, i.e. each regional thickness of each tunic layer; Described little/each the tunic layer of element received is the rete with continuous relief structure or many steps embossment structure or uniform thickness;
(2), determine the shape and the physical dimension of the mask perforate that this rete is used, the mask perforate that the direction that moves along mask periodically prepares this shape and physical dimension according to the thickness distribution function of each concrete rete; Described mask perforate is can be by the through hole of deposited particles; The thicknesses of layers of the each point of described rete on the straight line that is parallel to the mask moving direction is identical;
(3) mask and substrate parallel are placed, made mask substrate uniform translation relatively;
(4) by the mask perforate with stable speed to substrate orientated deposition coating materials, and in deposition process the uniform translation mask, and the distance of mask uniform translation is the integral multiple in mask perforate cycle; By the thickness that the shape and the physical dimension of mask perforate are modulated each area deposition on the substrate, obtain the individual layer embossment structure rete of predetermined thickness profile;
(5) repeating step (1)-(4), the individual layer embossment structure rete of predetermined coating materials kind of successive sedimentation several layers and thickness distribution just can obtain composite membrane layer with multilayer embossment structure on substrate.
2. a kind of method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory according to claim 1, it is characterized in that: the thickness distribution function of each the tunic layer in the described step (1) for this is little/receive each tunic layer of element perpendicular to the thickness distribution function on the direction of base plane, numerical value is the difference of the upper and lower interface of each tunic layer: if establish the thickness distribution function of i tunic layer is f (x), and the upper bound surface function of i tunic layer is z
i(x), i=1,2,3 ..., n, n are the rete quantity of multilayer embossment structure, the function at the last interface of substrate is z
0(x)=0, the following interface of i tunic layer is exactly the last interface of i-1 tunic layer, then f (x)=z
i(x)-z
I-1(x), promptly the numerical value of the thickness distribution function f (x) of i tunic layer equals the upper bound surface function z of i tunic layer
i(x) deduct the upper bound surface function z of i-1 tunic layer
I-1(x).
3. the method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory according to claim 1, it is characterized in that: the shape along the mask perforate of mask moving direction period profile in the described step (2) is all identical with physical dimension, and the cycle of mask perforate is greater than the maximum height of single perforate on the mask moving direction.
4. according to claim 1ly prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory, it is characterized in that: the substrate in the described step (3) is ultraviolet light material, visible light material or infra-red material.
5. the method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory according to claim 1, it is characterized in that: the mask in the described step (3) does not all contact with on-chip embossment structure when static and mobile, and the distance of mask and substrate is 500 nanometers to 500 micron.
6. the method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory according to claim 1, it is characterized in that: the mask in the described step (3) at the uniform velocity moves to one dimension moves with respect to substrate, is at the uniform velocity mobile substrate of the at the uniform velocity mobile mask of direction arranged of mask perforate or opposite direction along the predetermined mask moving direction.
7. according to claim 1ly prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory, it is characterized in that: the method for orientated deposition is electron beam evaporation plating, hot evaporation or laser deposition in the described step (4).
8. according to claim 1ly prepare the method for composite membrane layer with multilayer embossment structure based on mobile coding mask theory, it is characterized in that: the coating materials of orientated deposition is silver, copper, aluminium, chromium, gold, silicon dioxide, silicon, glass, gallium arsenide, gallium nitride or aluminium oxide in the described step (4).
9. according to claim 1ly prepare the method for composite membrane layer with multilayer embossment structure, it is characterized in that: respectively be parallel on the substrate in the described step (4) on the thicknesses of layers that deposits on the straight line of Y direction and the mask over against the perforate of this straight line g (x highly based on mobile coding mask theory
i) be directly proportional, i.e. f (x)=kg (x), wherein k is a constant.
10. the method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory according to claim 1, it is characterized in that: when the thickness distribution of each layer embossment structure rete is identical or proportional in the described step (5), the mask of employing have identical mask perforate or the mask perforate proportional at the height of Y direction; The thickness distribution of different retes is inequality and when disproportionate, then uses the mask of different perforates.
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719865A (en) * | 2012-07-13 | 2012-10-10 | 曲悦峰 | Film plating mold |
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| JP4678640B2 (en) * | 2000-05-01 | 2011-04-27 | リコー光学株式会社 | Concentration distribution mask and three-dimensional structure manufacturing method using the same |
| CN1125352C (en) * | 2000-09-25 | 2003-10-22 | 中国科学院光电技术研究所 | Method for making microlens array |
| CN100343698C (en) * | 2003-05-29 | 2007-10-17 | 中国科学院光电技术研究所 | Continuous deep relief nonspheric microlens array manufacturing method |
| CN1794093A (en) * | 2005-12-23 | 2006-06-28 | 中国科学院光电技术研究所 | Method of making nanometer periodic structure by masking film displacement angle changing deposition |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102719865A (en) * | 2012-07-13 | 2012-10-10 | 曲悦峰 | Film plating mold |
| CN102719865B (en) * | 2012-07-13 | 2016-02-24 | 曲悦峰 | A kind of film plating die |
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