CN1794093A - Method of making nanometer periodic structure by masking film displacement angle changing deposition - Google Patents
Method of making nanometer periodic structure by masking film displacement angle changing deposition Download PDFInfo
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- CN1794093A CN1794093A CN 200510130719 CN200510130719A CN1794093A CN 1794093 A CN1794093 A CN 1794093A CN 200510130719 CN200510130719 CN 200510130719 CN 200510130719 A CN200510130719 A CN 200510130719A CN 1794093 A CN1794093 A CN 1794093A
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- periodic structure
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Abstract
A method for preparing nanocyclic structure pattern by means of mask shielded variangular deposit includes carrying out exposure - photo etching by utilizing mask plate; calculating out relevant incoming angle of evaporation source according to line width, cycle, height of photoresist, evaporating source and substrate distance; regulating incoming angle of evaporating source to deposit metal film and sacrifice layer in sequence; stripping off photoresist and sacrifice layer.
Description
Technical field
The present invention relates to the method for making of micro-nano structure in the Micrometer-Nanometer Processing Technology, particularly be applicable to the method for the employing masking film angle changing deposition making nano periodic structure figure of periodicity deep-submicron and nanostructured.
Technical background
The microstructure minimum period of utilizing common lithographic equipment to do can only be in micron dimension, if make sub-micron, deep-submicron and nano graph, the essential means that adopt other.
The method of making at present nano graph has a lot, comparative maturity mainly be that means of photolithography such as employing electron beam exposure, focused ion beam exposure are made nano graph.
The resolving power of optical exposure and depth of focus mainly are subjected to the restriction of optical source wavelength and lens numerical aperture, and the radiation wavelength of electron beam then can shorten by energization, so the resolving power of electron beam exposure far surpasses the resolving power of optical lithography.The principle of electron beam exposure is to utilize electromagnetic field that electron beam is focused into superfine bundle, and irradiation is on electronic corrosion-resistant.By the deflection of electromagnetic field controlling electron beam, nano graph is directly write on the substrate, the nano graph size of being made by electron beam exposure can reach 10～20nm.But because electron beam is with the nano graph point by point scanning exposure of pixel one by one, so speed is extremely slow, is unsuitable for making large-area nano graph structure.
The principle of focused ion beam exposure be the ion beam that forms after utilizing atom by ionization as light source, resist is exposed, mainly contain ion beam exposure technique and projection Ion Beam Lithography Technology at present.Wherein ion beam exposure technique and electron beam lithography are similar, also are to adopt the pointwise mode to carry out scan exposure, and speed is very slow, is unsuitable for making large-area nano graph equally.And the projection Ion Beam Lithography Technology still exists the problems such as making difficulty of mask, still is in conceptual phase.Therefore the focused ion beam exposure is mainly used in the reparation for the repairing of optical mask version and integrated circuit (IC) chip at present.
No matter be electron beam lithography or focused Ion Beam Lithography Technology, all ubiquity apparatus expensive, fabrication cycle is long for they, can't make the large-area nano graphic structure, also can't adapt to problems such as big industrial needs.
Summary of the invention
Technology of the present invention is dealt with problems and is: when generally adopting the exposure of electron beam exposure and focused ion beam to make the nanostructured figure at present, existing weak point, the method that the masking film angle changing deposition is made the nano periodic structure figure has been proposed, the capture-effect of photoresist when this method is utilized the metal deposition, the displacement of the lines that replaces nano-precision with bigger angular displacement, realize the making of nano graph then by the lift-off technology, adopt this method can make large-area nano periodic structure figure.
Technical solution of the present invention is: the masking film angle changing deposition is made the method for nano periodic structure figure, it is characterized in that: replace displacement of the lines with bigger angular displacement, realize the making of nano graph by the incident angle of control substrate and evaporation source, its concrete steps are as follows:
(1) substrate cleans
Clean monocrystalline silicon substrate with HF solution, deionized water and acetone+ethanolic solution respectively, then substrate is put into drying in oven;
(2) spin coating photoresist
Apply photoresist layer on polyimide sacrificial layer, photoresist layer thickness is 1-2 μ m;
(3) photoetching
On described photoresist layer, adopt mask to make minimum feature by lithography and the cycle is the microstructure graph of the lithographic equipment exposure limit;
(4) repeatedly re-adjustments is evaporated incident angle, depositing metal films and sacrifice layer successively
According to the live width that will make the nanostructured figure and cycle parameter, calculate corresponding evaporation source incident angle, utilize turntable to regulate the angle of metal evaporation sources and substrate, depositing metal films and sacrifice layer successively;
Evaporation source incident angle computing formula is as follows:
In the formula: α-evaporation source is an incident angle; H-is the height of photoresist figure;
W-is the width of bare substrate;
L-is the width that needs plated metal and sacrifice layer;
(5) stripping photoresist and sacrifice layer
With acetone soln and sacrifice layer corrosion liquid stripping photoresist and sacrifice layer, the metallic film that is deposited on photoresist and the sacrifice layer is peeled off simultaneously, preserves and be deposited on suprabasil metallic film.
The capture-effect of photoresist when the present invention mainly utilizes lift-off technology and metal deposition replaces the displacement of the lines of nano-precision with angular displacement, promptly makes the live width figure of nano-precision by the incident angle of accurate control substrate and evaporation source.When incident angle α is 35 °, when the incident angle changes delta α of evaporation source was 0.1 °, the line width variation Δ L of figure was 5nm.General manual turntable precision can reach 0.03 °, therefore utilizes this principle can produce the graphic structure of live width for the tens nanometer magnitude.
The present invention is with the advantage of the comparison of prior art: the present invention directly makes the nano periodic structure figure with electron beam exposure apparatus and focused ion beam exposure machine and compares, the masking film angle changing deposition make the nano periodic structure figure to instrument and equipment less demanding, speed is fast, precision is high and can make large-area cycle nanostructured figure.
Description of drawings
Fig. 1 method for making block diagram;
Fig. 2 is a mask synoptic diagram of the present invention, is used for exposure photo-etching, and the shadow region is light tight district among Fig. 1, and white portion is a photic zone.The live width of grating lines is 2 μ m, and the cycle is 4 μ m, and the graph area area is 10mm * 10mm;
Fig. 3 is the synoptic diagram of step of the present invention (2), i.e. spin coating one deck photoresist layer 1 on cleaned silicon chip surface;
Fig. 4 is the synoptic diagram of step of the present invention (3), promptly on described photoresist layer, adopt mask to make minimum feature by lithography and the cycle is the microstructure graph of the lithographic equipment exposure limit, photoetching minimum feature and cycle are respectively 2 μ m and 4 μ m at present, the shadow region is the photoresist layer 1 behind the photoetching development among the figure, its width is 2 μ m, highly is 1 μ m;
Fig. 5 is the synoptic diagram of step of the present invention (4), promptly according to the parameters such as distance of height, evaporation source and the substrate of the live width that will make the nanostructured figure and cycle, photoresist figure, calculate corresponding evaporation source incident angle, utilize turntable to regulate the angle of angle for being calculated of metal evaporation sources and substrate, depositing metal films 2 and sacrifice layer successively then.Only need in the experiment to deposit a metallic film 2 and just can satisfy the making requirement by regulating the angle of metal evaporation sources and substrate.Black arrow is represented the deposition direction of metallic film among the figure;
Fig. 6 is the synoptic diagram of step of the present invention (5), and promptly with acetone soln and sacrifice layer corrosion liquid stripping photoresist and sacrifice layer, the metallic film that is deposited on photoresist and the sacrifice layer is peeled off simultaneously, preserves and be deposited on suprabasil metallic film.Owing to do not have deposition of sacrificial layer in the experiment,, be deposited on suprabasil metallic film 4 and then remain so only need peel off with the metallic film that acetone will be deposited on the photoresist;
Fig. 7 makes atomic force microscope (AFM) photo of grating lines for the present invention, shows that the metal grating live width of making is 250nm, and still there is the part residual photoresist on the metal wire left side in the photo;
Fig. 8 makes atomic force microscope (AFM) 3D of grating lines for the present invention;
Fig. 9 makes the optical microscope photograph (amplifying 1000 times) of grating lines for the present invention, and thin bright lines are metal among the figure, and dark areas is substrate.The metal wire that utilizes the present invention to make as we can see from the figure is evenly distributed, and line edge is clear and do not have a broken string.
Embodiment
An exemplary embodiments of the present invention is to utilize the masking film angle changing deposition to make the nano periodic structure graph technology, and fabrication cycle is 4 μ m, and live width is 250nm, and graph area is the grating lines of 10mm * 10mm.Its manufacturing process is as follows:
(1) substrate cleans
The purpose that substrate cleans is in order to remove the various organic and inorganic impurity of substrate surface, to strengthen the adhesion of photoresist and substrate surface, improving yield rate.
The first step with the oxide layer on 10%HF flush away monocrystalline silicon substrate surface, is used deionized water (resistivity 〉=16M Ω) ultrasonic cleaning 15min again; Second step, substrate is cleaned with acetone+ethanolic solution on hydro-extractor, dry; The 3rd step, substrate is put into baking oven, dry by the fire 120min under 200 ℃ of temperature.
(2) spin coating photoresist
On substrate, apply photoresist layer 1, the about 2.0 μ m of the thickness of photoresist layer 1, drying time 120s under 100 ℃ of temperature on the hot plate, as shown in Figure 2.
(3) exposure photo-etching
Mask is used for exposure photo-etching, its domain as shown in Figure 1, the shadow region is light tight district among the figure, white portion is a photic zone.To on photoresist layer, produce the microstructure graph that minimum feature and cycle are the lithographic equipment exposure limit with this piece mask.
Adopt as shown in Figure 1 the mask 48s that on photoresist, exposes, in the AZ300MIF alkaline-based developer, develop under the room temperature.Positive photoresist is subjected to that part of photoresist meeting of UV-irradiation owing to photochemical reaction is degraded after exposure, be dissolved in developer solution, and the photoresist that is not subjected to UV-irradiation can not be dissolved in developer solution, produces the photoresist figure identical with mask like this on substrate.The thickness of the photoresist layer 1 after the development is 1 μ m, as shown in Figure 3.
(4) repeatedly re-adjustments is evaporated incident angle depositing metal films and sacrifice layer successively
Parameters such as distance according to height, evaporation source and the substrate of the live width that will make the nanostructured figure and cycle, photoresist figure, calculate corresponding evaporation source incident angle (computing formula as previously mentioned), utilize turntable to regulate the angle of angle for being calculated of metal evaporation sources and substrate, depositing metal films 2 and sacrifice layer successively then.Because the cycle of mask has been 4 μ m in the experiment, be the metal wire of 250nm if make width, need be 14.9 ° only by the angle of regulating metal evaporation sources and substrate, deposit a metallic film 2 and just can satisfy the making requirement, as shown in Figure 4.
(5) stripping photoresist and sacrifice layer
With acetone soln and sacrifice layer corrosion liquid stripping photoresist and sacrifice layer, the metallic film that is deposited on photoresist and the sacrifice layer is peeled off simultaneously, preserves and be deposited on suprabasil metallic film.Owing to there is not deposition of sacrificial layer, the metallic film that only will be deposited on the photoresist with acetone during historical facts or anecdotes is tested is peeled off, and is deposited on suprabasil metallic film 2 and then remains.As shown in Figure 5.
By the present embodiment card, utilizing the masking film angle changing deposition to make the nano periodic structure figure cycle of making is 4 μ m, and live width is 250nm, and graph area is the submicrometer structure figure of 10mm * 10mm.Also can produce large-area nanostructured figure on this theoretical method.
As Fig. 6-shown in Figure 8, by atomic force microscope (AFM) photo and scanning electron microscope (SEM) photo, can find out obviously that the metal wire width that adopts masking film angle changing deposition making nano periodic structure graphic making to go out is 252nm, length is 10mm, and graph area is 10 * 10mm, and line edge is steep in whole graph area, lines are even, structural integrity does not have broken string, obtains good experiment effect.
Claims (6)
1, the masking film angle changing deposition is made the method for nano periodic structure figure, it is characterized in that concrete steps are as follows:
(1) substrate is cleaned;
(2) spin coating photoresist;
(3) adopt photoetching method, producing minimum feature and cycle on photoresist layer is the microstructure graph of the lithographic equipment exposure limit;
(4) re-adjustments evaporation incident angle, depositing metal films and sacrifice layer;
(5) stripping photoresist and sacrifice layer are peeled off the metallic film that is deposited on photoresist and the sacrifice layer simultaneously, preserve and be deposited on suprabasil metallic film.
2, masking film angle changing deposition according to claim 1 is made the method for nano periodic structure figure, it is characterized in that: in the described step (4) according to the angle of needed live width and periodic adjustment metal evaporation sources and substrate.
3, masking film angle changing deposition according to claim 1 is made the method for nano periodic structure figure, and it is characterized in that: the minimum feature of the photoresist graphic structure of described photoetching is the exposure limit of lithographic equipment.
4, masking film angle changing deposition according to claim 1 is made the method for nano periodic structure figure, it is characterized in that: utilize turntable to regulate the angle of metal evaporation sources and substrate;
5, masking film angle changing deposition according to claim 1 is made the method for nano periodic structure figure, it is characterized in that: depositing metal films and sacrifice layer successively;
6, masking film angle changing deposition according to claim 1 is made the method for nano periodic structure figure, it is characterized in that: utilize acetone soln and sacrifice layer corrosion liquid stripping photoresist and sacrifice layer.
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| CN 200510130719 CN1794093A (en) | 2005-12-23 | 2005-12-23 | Method of making nanometer periodic structure by masking film displacement angle changing deposition |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101718952B (en) * | 2009-12-25 | 2012-04-18 | 中国科学院光电技术研究所 | Method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory |
| CN103080843A (en) * | 2010-07-07 | 2013-05-01 | 尤利塔股份公司 | A method and apparatus for printing a periodic pattern with large depth of focus |
| CN106773540A (en) * | 2016-11-29 | 2017-05-31 | 四川大学 | A kind of large-area nano gap array and preparation method thereof |
| CN106842814A (en) * | 2017-01-06 | 2017-06-13 | 中国科学院物理研究所 | A kind of preparation method of nano gap |
| CN110831419A (en) * | 2019-11-05 | 2020-02-21 | 中国科学院光电技术研究所 | Preparation method of transparent electromagnetic shielding material based on metal mesh |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
| CN111575653A (en) * | 2020-05-10 | 2020-08-25 | 兰州大学 | X-ray absorption grating and manufacturing method thereof |
| CN111834216A (en) * | 2019-04-15 | 2020-10-27 | 中国科学院物理研究所 | Method for preparing nano-sized metal film pattern |
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2005
- 2005-12-23 CN CN 200510130719 patent/CN1794093A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101718952B (en) * | 2009-12-25 | 2012-04-18 | 中国科学院光电技术研究所 | Method for preparing composite membrane layer with multilayer embossment structure based on mobile coding mask theory |
| CN103080843A (en) * | 2010-07-07 | 2013-05-01 | 尤利塔股份公司 | A method and apparatus for printing a periodic pattern with large depth of focus |
| CN103080843B (en) * | 2010-07-07 | 2015-11-25 | 尤利塔股份公司 | For printing the method and apparatus of the periodic pattern with large depth of focus |
| CN106773540A (en) * | 2016-11-29 | 2017-05-31 | 四川大学 | A kind of large-area nano gap array and preparation method thereof |
| CN106842814A (en) * | 2017-01-06 | 2017-06-13 | 中国科学院物理研究所 | A kind of preparation method of nano gap |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
| CN111834216A (en) * | 2019-04-15 | 2020-10-27 | 中国科学院物理研究所 | Method for preparing nano-sized metal film pattern |
| CN110831419A (en) * | 2019-11-05 | 2020-02-21 | 中国科学院光电技术研究所 | Preparation method of transparent electromagnetic shielding material based on metal mesh |
| CN111575653A (en) * | 2020-05-10 | 2020-08-25 | 兰州大学 | X-ray absorption grating and manufacturing method thereof |
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