CN101710604B - High-brightness superradiation light-emitting diode - Google Patents
High-brightness superradiation light-emitting diode Download PDFInfo
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- CN101710604B CN101710604B CN2009100668125A CN200910066812A CN101710604B CN 101710604 B CN101710604 B CN 101710604B CN 2009100668125 A CN2009100668125 A CN 2009100668125A CN 200910066812 A CN200910066812 A CN 200910066812A CN 101710604 B CN101710604 B CN 101710604B
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Abstract
The invention relates to a superradiation light-emitting diode which belongs to the technical field of semiconductor photoelectronic devices. The prior superradiation light-emitting diode in the technical field has the defects of low output power, narrow light spectrum and the like, thereby seriously confining the application of the devices in related fields. The high-brightness superradiation light-emitting diode of the invention is prepared in the following way: making a conical light amplification region, a S-shaped-like seed light source region, an optical isolation groove and the like on the P surface of the epitaxial wafer of a traditional semiconductor laser by using the techniques of photoengraving, etching and the like; integrating the conical light amplification region, the S-shaped-like seed light source region, the optical isolation groove and the like on one chip; and making the high-brightness superradiation light-emitting diode by using techniques related to the semiconductor laser. The superradiation light-emitting diode of the invention has the advantages of high output power, wide light spectrum, small divergence angle and the like, and plays an important role in promoting the application of the devices in related fields.
Description
Technical field
The present invention relates to semiconductor device art, belong to the semiconductor photoelectronic device technical field.
Background technology
Super-radiance light emitting diode (SLD) is compared with semiconductor laser wideer luminescent spectrum and shorter coherence length, can significantly reduce the noise and the Optical Fiber Transmission modal noise that are caused by fiber Rayleigh scattering and nonlinear optical Kerr effect; Super-radiance light emitting diode compare with light-emitting diode have the power output height, optical coupling efficiency height, response speed reach advantages such as the angle of divergence is little soon.Because super-radiance light emitting diode possesses above advantage, so such device is with a wide range of applications in fields such as optic fiber gyroscope (FOG), optical time domain reflectometer (OTDR), territory net (LAN), Optical Coherence Tomography Imaging Technology, optical wavelength-division multiplex (WDM) system, optical processing techniques.Yet the power output of present commercial SLD device only is a few mW magnitudes, and high-precision optic fiber gyroscope to need power output be the above broad spectrum light sources of 20 milliwatts.Therefore, limited the extensive use of such device.
The present invention is directed to the shortcoming of above-mentioned super-radiance light emitting diode, do not changing on traditional epitaxial slice structure basis, proposed a kind of new construction and corresponding manufacture method of high-brightness superradiation light-emitting diode.
Summary of the invention
The objective of the invention is to, design a kind of structure and corresponding manufacture method of making high-brightness superradiation light-emitting diode, this structure and corresponding manufacture method have the advantage that technology is simple, effective and cost is low.
This high-brightness superradiation light-emitting diode is characterized by following making step: (1) at first makes among Fig. 1 11 the figures in the zone of indicating by lithography on conventional semiconductor laser epitaxial wafer P face, make opening angle by lithography and be 4 °-8 °, the taper of long 1-3mm, the wide 5um in slot place, then in taper with exterior domain etching 0.15-0.25um, and the thick aluminium nitride dielectric insulating film of region surface sputter one deck 0.2-0.25um after being etched, the tapered zone that is not capped dielectric insulating film this moment is for reserving electric injection region.(2) 10 zones that indicated in Fig. 1, i.e. seed light source region makes that ridge is wide to be the class S figure of 5um by lithography, and this figure is that two radiuses are 50-150um quadrant is mutually circumscribed formed.Then at class S figure with exterior domain etching 0.3-0.4um, and the thick aluminium nitride dielectric insulating film of region surface sputter 0.2-0.25um after being etched, the class S rib region that is not capped dielectric insulating film is for reserving electric injection region.(3) at first make " eight " font groove figure by lithography in the seed light source region, etching 1.1-1.3um forms the light isolated groove deeply then, and each groove is grown up in 300um, wide 10um, the nearest place of two grooves is at a distance of being 10um, and angulation is 135 °, and groove and light amplification district are at a distance of 10um.The thick dielectric insulating film of sputter 0.2-0.25um in the light isolated groove.(4) the preparation material is the p side electrode of 10nm titanium, 50nm platinum, 200nm gold on the made figure.(5) that connects the band that the place makes 5um by lithography along seed light source region and light amplification district, etches away the electricity injection isolation strip that titanium platinum floor forms light amplification district and seed light source region.(6) prepare the N face electrode that material is 25nm nickel, 200nm gold germanium, 10nm titanium, 50nm platinum, 200nm gold behind the N face attenuate thereon.(7) in the front facet of bright dipping plating transmitance greater than 99.9% anti-reflection film, rear facet plating reflectivity is less than 20% highly reflecting films.
Description of drawings
In order to further specify technical characterictic of the present invention, further specify below in conjunction with accompanying drawing, wherein: Fig. 1 is superradiance seed light source region and the integrated super luminescence diode schematic diagram of light amplification plot structure that has class S ridge structure.Adopt the superradiance seed light source region and the taper Stimulated Light amplification region structure of class S ridged, seed light source region and light amplification district are integrated on the same chip, shown in Figure of description, 1 for producing the class S ridge structure of seed light, is electric injection region on the ridged; 2 is the light isolated groove; 3 are taper electricity injection region; 4 for being coated with the rear facet of highly reflecting films; 5 for being coated with the front facet of high antireflection film; 6 is the junction in seed light source region and light amplification district, makes the electric isolation strip in light amplification district and seed light source region herein; 7 is active area; 8,9 be shallow corrosion region, be coated with dielectric insulating film; 10 is the seed light source region; 11 is by 3,8, the 9 light amplification districts that constitute.With the active layer is the boundary, as the arrow direction, is that the p type mixes more than the active layer, is that the n type mixes below the active layer.
Embodiment
In conjunction with shown in Figure 1, a kind of manufacture method of high-brightness superradiation light-emitting diode is: (1) at first makes the 11 interior figures in zone that indicate among Fig. 1 by lithography, make opening angle by lithography and be 4 °-8 °, the taper of long 1-3mm, the wide 5um in slot place, then in taper with exterior domain etching 0.15-0.25um, and the thick aluminium nitride dielectric insulating film of region surface sputter one deck 0.2-0.25um after being etched, the tapered zone that is not capped dielectric insulating film this moment is for reserving electric injection region.(2) 10 zones that indicated in Fig. 1, i.e. seed light source region makes that ridge is wide to be the class S figure of 5um by lithography, and this figure is that two radiuses are 50-150um quadrant is mutually circumscribed formed.Then at class S figure with exterior domain etching 0.3-0.4um, and the thick aluminium nitride dielectric insulating film of region surface sputter 0.2-0.25um after being etched, the class S rib region that is not capped dielectric insulating film is for reserving electric injection region.(3) at first make " eight " font groove figure by lithography in the seed light source region, etching 1.1-1.3um forms the light isolated groove deeply then, and each groove is grown up in 300um, wide 10um, the nearest place of two grooves is at a distance of being 10um, and angulation is 135 °, and groove and light amplification district are at a distance of 10um.The thick dielectric insulating film of sputter 0.2-0.25um in the light isolated groove.(4) the preparation material is the p side electrode of 10nm titanium, 50nm platinum, 200nm gold on the made figure.(5) that connects the band that the place makes 5um by lithography along seed light source region and light amplification district, etches away the electricity injection isolation strip that titanium platinum floor forms light amplification district and seed light source region.(6) prepare the N face electrode that material is 25nm nickel, 200nm gold germanium, 10nm titanium, 50nm platinum, 200nm gold behind the N face attenuate thereon.(7) in the front facet of bright dipping plating transmitance greater than 99.9% anti-reflection film, rear facet plating reflectivity is less than 20% highly reflecting films.
Claims (1)
1. high-brightness superradiation light-emitting diode is characterized in that:
Described high-brightness superradiation light-emitting diode comprises the conventional semiconductor laser epitaxial wafer, described conventional semiconductor laser epitaxial wafer has P face and N face, has seed light source region and light amplification district and the electricity between seed light source region and light amplification district injection isolation strip on the described P face;
Described high-brightness superradiation light-emitting diode is made as follows:
(1) forms figure in the light amplification district, make opening angle by lithography and be 4 °-8 °, the taper of long 1-3mm, the wide 5um in slot place, then in taper with exterior domain etching 0.15-0.25um, and the thick aluminium nitride dielectric insulating film of region surface sputter one deck 0.2-0.25um after being etched, the tapered zone that is not capped dielectric insulating film this moment is for reserving electric injection region;
(2) make in the seed light source region that ridge is wide to be the class S ridged figure of 5um by lithography, such S ridged figure is that two radiuses are formed by the quadrant of 50-150um is mutually circumscribed, then at class S ridged figure with exterior domain etching 0.3-0.4um, and the thick aluminium nitride dielectric insulating film of region surface sputter 0.2-0.25um after being etched, the class S rib region that is not capped dielectric insulating film is for reserving electric injection region;
(3) make the splayed groove figure by lithography in the seed light source region, etching 1.1-1.3um forms the light isolated groove deeply then, each groove is grown up in 300um, wide 10um, the nearest place of two grooves is 10um, angulation is 135 °, and groove and light amplification district are at a distance of 10um, the aluminium nitride dielectric insulating film that sputter 0.2-0.25um is thick in the light isolated groove;
(4) on step (1)-(3) formed figure, prepare the p side electrode that material is followed successively by 10nm titanium, 50nm platinum, 200nm gold;
(5) that connects the band that the place makes 5um by lithography along seed light source region and light amplification district, etches away the electricity that titanium platinum floor forms light amplification district and seed light source region and injects the isolation strip;
(6) the N face electrode that material is 25nm nickel, 200nm gold germanium, 10nm titanium, 50nm platinum, 200nm gold will be prepared behind the described N face attenuate thereon;
(7) in the front facet of bright dipping plating transmissivity greater than 99.9% anti-reflection film, at rear facet plating reflectivity less than 20% highly reflecting films.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100668125A CN101710604B (en) | 2009-04-14 | 2009-04-14 | High-brightness superradiation light-emitting diode |
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| CN2009100668125A CN101710604B (en) | 2009-04-14 | 2009-04-14 | High-brightness superradiation light-emitting diode |
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| CN101710604A CN101710604A (en) | 2010-05-19 |
| CN101710604B true CN101710604B (en) | 2011-05-18 |
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| CN2009100668125A Expired - Fee Related CN101710604B (en) | 2009-04-14 | 2009-04-14 | High-brightness superradiation light-emitting diode |
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| CN104158086B (en) * | 2014-08-27 | 2017-07-28 | 武汉光迅科技股份有限公司 | A kind of light emitting semiconductor device |
| JP6551672B2 (en) * | 2015-08-17 | 2019-07-31 | セイコーエプソン株式会社 | Light emitting device and projector |
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| US5252839A (en) * | 1992-06-10 | 1993-10-12 | Hewlett-Packard Company | Superluminescent light-emitting diode with reverse biased absorber |
| CN2646972Y (en) * | 2003-03-25 | 2004-10-06 | 叶永明 | Luminotron decorated telephone |
| CN1549353A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Method for producing super radiation luminous diode and luminous diode thereof |
| CN1681176A (en) * | 2004-04-09 | 2005-10-12 | 中国科学院半导体研究所 | Ridged wave-guiding high-power semiconductor laser structure with conical gain zone |
| CN101118364A (en) * | 2007-09-12 | 2008-02-06 | 长春理工大学 | Main vibrating light amplifier with isolation region |
| CN101197407A (en) * | 2007-12-28 | 2008-06-11 | 武汉光迅科技股份有限公司 | Super-radiation light emitting diode |
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- 2009-04-14 CN CN2009100668125A patent/CN101710604B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252839A (en) * | 1992-06-10 | 1993-10-12 | Hewlett-Packard Company | Superluminescent light-emitting diode with reverse biased absorber |
| CN2646972Y (en) * | 2003-03-25 | 2004-10-06 | 叶永明 | Luminotron decorated telephone |
| CN1549353A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Method for producing super radiation luminous diode and luminous diode thereof |
| CN1681176A (en) * | 2004-04-09 | 2005-10-12 | 中国科学院半导体研究所 | Ridged wave-guiding high-power semiconductor laser structure with conical gain zone |
| CN101118364A (en) * | 2007-09-12 | 2008-02-06 | 长春理工大学 | Main vibrating light amplifier with isolation region |
| CN101197407A (en) * | 2007-12-28 | 2008-06-11 | 武汉光迅科技股份有限公司 | Super-radiation light emitting diode |
Non-Patent Citations (1)
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| 李辉 等.高功率850nm宽光谱大光腔超辐射发光二极管.《中国激光》.2006,第33卷(第5期),全文. * |
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