CN101710570B - Gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion - Google Patents
Gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion Download PDFInfo
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- CN101710570B CN101710570B CN2009101177385A CN200910117738A CN101710570B CN 101710570 B CN101710570 B CN 101710570B CN 2009101177385 A CN2009101177385 A CN 2009101177385A CN 200910117738 A CN200910117738 A CN 200910117738A CN 101710570 B CN101710570 B CN 101710570B
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Abstract
The invention relates to a gluing front surface processing technology of a semiconductor silicon chip after phosphorous diffusion, comprising the following technical method: a, after the phosphorous diffusion of the silicon chip, soaking and dehydrating the surface of the silicon chip with concentrated sulfuric acid at the temperature of 115-125 DEG C; flushing for 10 minutes with deionized water; spin-drying for 5 minutes in a drier; suspending the silicon chip in isopropanol steam to remove vapor of the surface of the silicon chip; and finally, removing the isopropanol which is attached to the surface of the silicon chip by a nitrogen gun. The technical processing method of the invention can sufficiently dry the surface of the silicon chip, obviously improves photosensitive resist adhesivity after gluing the surface of the silicon chip and eliminates the phenomena of dropping glue and eroding in a corrosion process, and the photoetching corrosion quality is obviously increased.
Description
Technical field
The present invention relates to the preceding process of surface treatment of gluing behind the semi-conductor silicon chip process of surface treatment field, particularly semi-conductor silicon chip phosphorous diffusion.
Background technology
Contain phosphorus composition owing to silicon chip surface after the semi-conductor silicon chip phosphorous diffusion, and phosphorus has strong water absorption, make the silicon chip surface moisture absorption, thereby when follow-up photoetching gluing, make the adhesiveness variation of photoresist and silicon chip surface, cause the generation that photoresist falls glue, oxide etch erosion problem occurring, have a strong impact on photoetching quality.The method of oven-baked is generally adopted in surface treatment after the present known semi-conductor silicon chip phosphorous diffusion, this method is in the silicon chip flow later stage, still can photoresist occur and surface adhesive is poor, oxide etch process silicon chip surface falls glue easily, causes problems such as erosion.
Summary of the invention
The present invention falls the glue problem in order to solve existing semi-conductor silicon chip in phosphorous diffusion post-etching process, provide a kind of and can reach silicon chip surface dehydration, hydrophobic effect, make the process of surface treatment before the gluing after the semi-conductor silicon chip phosphorous diffusion of silicon chip surface intensive drying.
The present invention solves its technical problem by following technical proposals:
A kind of gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion, handle by following process:
A, silicon chip adopt concentration after phosphorous diffusion be 98% the concentrated sulfuric acid, under 115～125 ℃ of temperature silicon chip surface soaked processed 9.5～10.5 minutes;
The deionized water bath of b, usefulness resistivity 〉=15M Ω .CM 10 minutes;
C, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
D, silicon chip is suspended in the methanol vapor, the steam of silicon chip surface is removed, suspended time 9-11 minute with methanol vapor;
E, usefulness nitrogen air gun will blow down attached to the isopropyl alcohol of silicon chip surface, blow down nitrogen pressure 〉=2kg/cm time 3-4 minute
2, nitrogen flow 24-26L/min.
Technical parameter best in the described treatment process is as follows:
A, silicon chip adopt concentration after phosphorous diffusion be 98% the concentrated sulfuric acid, under 120 ℃ of temperature silicon chip surface soaked processed 10 minutes;
The deionized water bath of b, usefulness resistivity 〉=15M Ω .CM 10 minutes;
C, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
D, silicon chip is suspended in the methanol vapor, the steam of silicon chip surface is removed, suspend 10 minutes time with methanol vapor;
E, usefulness nitrogen air gun will blow down 3 minutes blowing time, nitrogen pressure 〉=2kg/cm attached to the isopropyl alcohol of silicon chip surface
2, nitrogen flow 25L/min.
By the silicon chip surface intensive drying after the PROCESS FOR TREATMENT of the present invention, silicon chip surface carries out that silicon chip surface and photoresist adhesiveness obviously improve behind the gluing, eliminated occur in the corrosion process glue, erosion, the photoetching corrosion quality is significantly improved.
Embodiment
Below in conjunction with embodiment the present invention is further elaborated.
Embodiment 1
1, the silicon chip after the phosphorous diffusion is soaked in concentration is 98% the concentrated sulfuric acid, silicon chip surface was carried out processed 10 minutes, 115 ℃ of soaking temperatures;
2, the silicon chip bath after the deionized water of usefulness resistivity 〉=15M Ω .CM will soak 10 minutes;
3, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
4, silicon chip is suspended in the methanol vapor with methanol vapor the steam of silicon chip surface is removed, suspended 10 minutes;
5, will blow down 3 minutes blowing time, nitrogen pressure 〉=2kg/cm attached to the isopropyl alcohol of silicon chip surface with the nitrogen air gun
2, nitrogen flow 25L/min.
Embodiment 2
1, the silicon chip after the phosphorous diffusion is soaked in concentration is 98% the concentrated sulfuric acid, silicon chip surface was carried out processed 9.5 minutes, 120 ℃ of soaking temperatures;
2, the silicon chip bath after the deionized water of usefulness resistivity 〉=15M Ω .CM will soak 10 minutes;
3, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
4, silicon chip is suspended in the methanol vapor, the steam of silicon chip surface is removed, suspend 9 minutes time with methanol vapor;
5, will blow down 3 minutes blowing time, nitrogen pressure 〉=2kg/cm attached to the isopropyl alcohol of silicon chip surface with the nitrogen air gun
2, nitrogen flow 24L/min.
Embodiment 3
1, the silicon chip after the phosphorous diffusion is soaked in concentration is 98% the concentrated sulfuric acid, silicon chip surface was carried out processed 10.5 minutes, 125 ℃ of soaking temperatures;
2, the silicon chip bath after the deionized water of usefulness resistivity 〉=15M Ω .CM will soak 10 minutes;
3, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
4, silicon chip is suspended in the methanol vapor, the steam of silicon chip surface is removed, suspend 11 minutes time with methanol vapor;
5, will blow down 3 minutes blowing time, nitrogen pressure 〉=2kg/cm attached to the isopropyl alcohol of silicon chip surface with the nitrogen air gun
2, nitrogen flow 26L/min.
Claims (2)
1. gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion is characterized in that handling by following process:
A, silicon chip adopt concentration after phosphorous diffusion be 98% the concentrated sulfuric acid, under 115～125 ℃ of temperature silicon chip surface soaked processed 9.5～10.5 minutes;
The deionized water bath of b, usefulness resistivity 15M Ω .CM 10 minutes;
C, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
D, silicon chip is suspended in the methanol vapor, the steam of silicon chip surface is removed, suspended time 9-11 minute with methanol vapor;
E, usefulness nitrogen air gun will blow down attached to the isopropyl alcohol of silicon chip surface, blow down nitrogen pressure 2kg/cm time 3-4 minute
2, nitrogen flow 24-26L/min.
2. gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion according to claim 1 is characterized in that handling by following process:
A, silicon chip adopt concentration after phosphorous diffusion be 98% the concentrated sulfuric acid, under 120 ℃ of temperature silicon chip surface soaked processed 10 minutes;
The deionized water bath of b, usefulness resistivity 15M Ω .CM 10 minutes;
C, be that rotation dries 5 minutes in the drier of 600rpm at rotating speed;
D, silicon chip is suspended in the methanol vapor, replaces, remove the steam of silicon chip surface, suspend 10 minutes time with the steam of methanol vapor with silicon chip surface;
E, usefulness nitrogen air gun will blow down 3 minutes blowing time, nitrogen pressure 2kg/cm attached to the isopropyl alcohol of silicon chip surface
2, nitrogen flow 25L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101177385A CN101710570B (en) | 2009-12-14 | 2009-12-14 | Gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101177385A CN101710570B (en) | 2009-12-14 | 2009-12-14 | Gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101710570A CN101710570A (en) | 2010-05-19 |
| CN101710570B true CN101710570B (en) | 2011-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101177385A Expired - Fee Related CN101710570B (en) | 2009-12-14 | 2009-12-14 | Gluing front surface processing technology of semiconductor silicon chip after phosphorous diffusion |
Country Status (1)
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| CN (1) | CN101710570B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065951A (en) * | 1991-04-13 | 1992-11-04 | 武汉大学 | New phosphorus diffusing technique in the silicon planner technology |
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2009
- 2009-12-14 CN CN2009101177385A patent/CN101710570B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065951A (en) * | 1991-04-13 | 1992-11-04 | 武汉大学 | New phosphorus diffusing technique in the silicon planner technology |
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| CN101710570A (en) | 2010-05-19 |
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Granted publication date: 20110518 Termination date: 20131214 |