CN101706560A - 利用自旋转矩二极管效应的磁场检测系统 - Google Patents
利用自旋转矩二极管效应的磁场检测系统 Download PDFInfo
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- CN101706560A CN101706560A CN200910160349A CN200910160349A CN101706560A CN 101706560 A CN101706560 A CN 101706560A CN 200910160349 A CN200910160349 A CN 200910160349A CN 200910160349 A CN200910160349 A CN 200910160349A CN 101706560 A CN101706560 A CN 101706560A
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- magnetic field
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- magnetization
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- recording disk
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
- H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/188,183 US8416539B2 (en) | 2008-08-07 | 2008-08-07 | Magnetic field sensing system using spin-torque diode effect |
US12/188,183 | 2008-08-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101706560A true CN101706560A (zh) | 2010-05-12 |
CN101706560B CN101706560B (zh) | 2014-04-23 |
Family
ID=41652723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910160349.0A Active CN101706560B (zh) | 2008-08-07 | 2009-08-07 | 利用自旋转矩二极管效应的磁场检测系统 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8416539B2 (zh) |
CN (1) | CN101706560B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103091650A (zh) * | 2011-11-04 | 2013-05-08 | 霍尼韦尔国际公司 | 使用单个磁阻传感器确定磁场的面内磁场分量的装置和方法 |
CN106291414A (zh) * | 2015-06-26 | 2017-01-04 | 意法半导体股份有限公司 | 大规模的集成amr磁电阻器 |
CN110678768A (zh) * | 2017-06-12 | 2020-01-10 | 昭和电工株式会社 | 磁传感器及磁传感器的制造方法 |
CN111417858A (zh) * | 2017-11-30 | 2020-07-14 | Inl-国际伊比利亚纳米技术实验室 | 频率传感器 |
CN112082579A (zh) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | 宽量程隧道磁电阻传感器及惠斯通半桥 |
Families Citing this family (39)
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JP5036585B2 (ja) * | 2008-02-13 | 2012-09-26 | 株式会社東芝 | 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置 |
JP5377893B2 (ja) * | 2008-06-19 | 2013-12-25 | 株式会社東芝 | 磁気ヘッドアセンブリおよび磁気記録再生装置 |
US7935435B2 (en) | 2008-08-08 | 2011-05-03 | Seagate Technology Llc | Magnetic memory cell construction |
US8164861B2 (en) * | 2009-12-11 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands B.V. | Spin torque oscillator sensor employing antiparallel coupled oscilation layers |
US8705213B2 (en) * | 2010-02-26 | 2014-04-22 | Seagate Technology Llc | Magnetic field detecting device with shielding layer at least partially surrounding magnetoresistive stack |
US8508221B2 (en) | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
US8508973B2 (en) * | 2010-11-16 | 2013-08-13 | Seagate Technology Llc | Method of switching out-of-plane magnetic tunnel junction cells |
US8796794B2 (en) | 2010-12-17 | 2014-08-05 | Intel Corporation | Write current reduction in spin transfer torque memory devices |
US8604886B2 (en) | 2010-12-20 | 2013-12-10 | Intel Corporation | Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers |
US8320080B1 (en) | 2011-05-31 | 2012-11-27 | Hitachi Global Storage Technologies Netherlands B.V. | Three-terminal spin-torque oscillator (STO) |
US8633720B2 (en) | 2011-06-21 | 2014-01-21 | Avalanche Technology Inc. | Method and apparatus for measuring magnetic parameters of magnetic thin film structures |
US8462461B2 (en) | 2011-07-05 | 2013-06-11 | HGST Netherlands B.V. | Spin-torque oscillator (STO) with magnetically damped free layer |
JP5673951B2 (ja) * | 2011-08-23 | 2015-02-18 | 独立行政法人産業技術総合研究所 | 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子 |
US8456967B1 (en) | 2011-10-12 | 2013-06-04 | Western Digital (Fremont), Llc | Systems and methods for providing a pole pedestal for microwave assisted magnetic recording |
US8860159B2 (en) | 2011-10-20 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Army | Spintronic electronic device and circuits |
JP2013206476A (ja) * | 2012-03-27 | 2013-10-07 | Tdk Corp | 磁気ヘッドおよび磁気記録再生装置 |
US8806284B2 (en) | 2012-05-02 | 2014-08-12 | Avalanche Technology Inc. | Method for bit-error rate testing of resistance-based RAM cells using a reflected signal |
US8902544B2 (en) | 2012-12-13 | 2014-12-02 | HGST Netherlands B.V. | Spin torque oscillator (STO) reader with soft magnetic side shields |
US8908330B1 (en) | 2012-12-21 | 2014-12-09 | Western Digital Technologies, Inc. | Spin torque oscillator for microwave assisted magnetic recording with optimal geometries |
US9355654B1 (en) | 2012-12-21 | 2016-05-31 | Western Digital Technologies, Inc. | Spin torque oscillator for microwave assisted magnetic recording with increased damping |
US9252187B2 (en) | 2013-03-08 | 2016-02-02 | Avalanche Technology, Inc. | Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips |
US9330687B2 (en) * | 2013-10-16 | 2016-05-03 | HGST Netherlands B.V. | Microwave-assisted recording head with stable oscillation |
US9595917B2 (en) * | 2015-08-05 | 2017-03-14 | Qualcomm Incorporated | Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer |
US10566015B2 (en) | 2016-12-12 | 2020-02-18 | Western Digital Technologies, Inc. | Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers |
US10274571B2 (en) * | 2017-01-18 | 2019-04-30 | Samsung Electronics Co., Ltd. | Method and apparatus for measuring exchange stiffness at a patterned device level |
US10794968B2 (en) * | 2017-08-24 | 2020-10-06 | Everspin Technologies, Inc. | Magnetic field sensor and method of manufacture |
US10693056B2 (en) | 2017-12-28 | 2020-06-23 | Spin Memory, Inc. | Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer |
US10803916B2 (en) * | 2017-12-29 | 2020-10-13 | Spin Memory, Inc. | Methods and systems for writing to magnetic memory devices utilizing alternating current |
US10347308B1 (en) | 2017-12-29 | 2019-07-09 | Spin Memory, Inc. | Systems and methods utilizing parallel configurations of magnetic memory devices |
US10424357B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer |
US10403343B2 (en) | 2017-12-29 | 2019-09-03 | Spin Memory, Inc. | Systems and methods utilizing serial configurations of magnetic memory devices |
US10192789B1 (en) | 2018-01-08 | 2019-01-29 | Spin Transfer Technologies | Methods of fabricating dual threshold voltage devices |
US10319424B1 (en) | 2018-01-08 | 2019-06-11 | Spin Memory, Inc. | Adjustable current selectors |
US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
US10692556B2 (en) | 2018-09-28 | 2020-06-23 | Spin Memory, Inc. | Defect injection structure and mechanism for magnetic memory |
US10878870B2 (en) | 2018-09-28 | 2020-12-29 | Spin Memory, Inc. | Defect propagation structure and mechanism for magnetic memory |
US10867625B1 (en) | 2019-03-28 | 2020-12-15 | Western Digital Technologies, Inc | Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers |
US11087784B2 (en) * | 2019-05-03 | 2021-08-10 | Western Digital Technologies, Inc. | Data storage devices with integrated slider voltage potential control |
US11528038B2 (en) | 2020-11-06 | 2022-12-13 | Western Digital Technologies, Inc. | Content aware decoding using shared data statistics |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103091650A (zh) * | 2011-11-04 | 2013-05-08 | 霍尼韦尔国际公司 | 使用单个磁阻传感器确定磁场的面内磁场分量的装置和方法 |
CN103091650B (zh) * | 2011-11-04 | 2017-03-01 | 霍尼韦尔国际公司 | 用单个磁阻传感器确定磁场的面内磁场分量的装置和方法 |
CN106291414A (zh) * | 2015-06-26 | 2017-01-04 | 意法半导体股份有限公司 | 大规模的集成amr磁电阻器 |
CN110678768A (zh) * | 2017-06-12 | 2020-01-10 | 昭和电工株式会社 | 磁传感器及磁传感器的制造方法 |
CN111417858A (zh) * | 2017-11-30 | 2020-07-14 | Inl-国际伊比利亚纳米技术实验室 | 频率传感器 |
CN112082579A (zh) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | 宽量程隧道磁电阻传感器及惠斯通半桥 |
CN112082579B (zh) * | 2020-07-31 | 2023-08-15 | 中国电力科学研究院有限公司 | 宽量程隧道磁电阻传感器及惠斯通半桥 |
Also Published As
Publication number | Publication date |
---|---|
CN101706560B (zh) | 2014-04-23 |
US20100033881A1 (en) | 2010-02-11 |
US8416539B2 (en) | 2013-04-09 |
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