CN101701136A - Inorganic adhesive used in field of computers and preparation method thereof - Google Patents
Inorganic adhesive used in field of computers and preparation method thereof Download PDFInfo
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- CN101701136A CN101701136A CN200910197939A CN200910197939A CN101701136A CN 101701136 A CN101701136 A CN 101701136A CN 200910197939 A CN200910197939 A CN 200910197939A CN 200910197939 A CN200910197939 A CN 200910197939A CN 101701136 A CN101701136 A CN 101701136A
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- mineral binder
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000853 adhesive Substances 0.000 title abstract description 5
- 230000001070 adhesive effect Effects 0.000 title abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 23
- 238000000498 ball milling Methods 0.000 claims abstract description 15
- 238000005303 weighing Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 28
- 239000011230 binding agent Substances 0.000 claims description 25
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 25
- 239000011707 mineral Substances 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 238000010791 quenching Methods 0.000 claims description 8
- 230000000171 quenching effect Effects 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 238000007873 sieving Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 43
- 239000000203 mixture Substances 0.000 description 10
- 238000005245 sintering Methods 0.000 description 10
- 230000008595 infiltration Effects 0.000 description 8
- 238000001764 infiltration Methods 0.000 description 8
- 239000010970 precious metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010953 base metal Substances 0.000 description 5
- 239000011231 conductive filler Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 206010027439 Metal poisoning Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 208000008127 lead poisoning Diseases 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- Glass Compositions (AREA)
Abstract
The invention relates to an inorganic adhesive used in the field of computer and a preparation method thereof. The inorganic adhesive comprises the following raw materials, by weight percent: 20-40% of SiO2, 5-20% of Al2O3, 5-30% of MgO, 1-20% of B2O3, 1-20% of BaO, 1-10% of ZnO, 1-10% of V2O5, 0.1-5% of SrO, 0.1-5% of Li2O, 0.1-2% of Sb2O3 and 0.1-1% of Co3O4; the preparation process comprises the following steps: weighing, material mixing, melting, tabletting, ball milling and sieving; and the invention has the characteristics of complete elimination of gas, good airtightness and strong bonding force.
Description
[technical field]
The invention belongs to field of computer technology, particularly a kind of mineral binder bond that is used for computer realm and preparation method thereof.
[background technology]
Electrocondution slurry is a kind of novel electron functional materials, has a wide range of applications in electronic industry.With the charcoal element is the electrocondution slurry of conductive filler material, is mainly used in the printed resistor on the wiring board of making printed circuit board, thick film blended printed resistor and keyboard switch etc.China's electrocondution slurry and external having a long way to go, mainly show as kind few, yield poorly, form compatible mutually tandem product.China develops the higher and commercial electrocondution slurry of energy of level at present, because performance and processing performance such as the difference of sintering temperature and set time have limited them in electronic industry, particularly the widespread use in the electronic devices and components industry.
Electrocondution slurry is the basis of development electronic devices and components, be encapsulation, electrode and interconnected critical material, be a kind of high-tech electronics functional materials that integrates metallurgy, chemical industry, electronic technology, be mainly used in the every field of electron trades such as making thick film integrated circuit, sensor, electrical condenser, potentiometer, thick film hybrid integrated circuit, surface installation technique.
Electrocondution slurry comprises burning infiltration type electrocondution slurry and curing conductive resin (electrically conductive ink) two big classes.Burning infiltration type electrocondution slurry is mainly used in the electrode of electronic ceramics element (as ceramic condenser, thermistor, voltage dependent resistor etc.) and the encapsulation of electron device etc., and the burning infiltration temperature is generally about 500-1000 ℃.The curing conductive resin is mainly used in lead, Electronic Packaging of flexible circuit etc., and solidification value is about room temperature-200 ℃.Burning infiltration type electrocondution slurry is a kind of slurry of wide, the large usage quantity of purposes in the electron trade.Its kind is more, can be divided into by burning infiltration temperature difference: temperature of high temperature slurry (burning infiltration temperature＞800 ℃), middle temperature slurry (the burning infiltration temperature is 600-800 ℃) and low-temperature pulp (burning infiltration temperature＜600 ℃); Can be divided into base metal slurry and precious metal slurry by the kind of using conductive filler material.
The composition of slurry is by different application targets, and methods such as different characteristic requirements and use technology determine that its composition mainly is made of according to a certain percentage inorganic adhesive, conductive filler material, this three bulk of organic carrier.Inorganic adhesive also is a glass powder, generally by SiO
2With some metal oxides by a certain percentage after the melting mixing, the back of quenching is pulverized and is made, and is the key component of electrocondution slurry.The adding of glass powder helps to reduce sintering temperature, strengthens the sticking power between slurry and substrate, and the performance of glass powder directly has influence on the performance of electrocondution slurry simultaneously.
Conductive filler material generally is made up of precious metal Ru, Pd, Au, Ag or base metal Cu, Ni, Zn, Al etc.Precious metal generally has good electrical conductivity, and is difficult for oxidized; And the base metal ratio is easier to oxidation, and its surface has layer oxide film usually.If when adding to these metals in the electrocondution slurry through high temperature sintering, the just easier oxidation of these base metals certainly will influence the conductivity of electrocondution slurry like this.If but used precious metal in a large number, production cost would be risen.In addition, the sintering of base metal slurry generally carries out in the atmosphere of nitrogen or vacuum, and this technology also can increase cost, and also inconvenient in the operating process.What at present, study often is the lowpriced metallization of conductive filler material.In order to increase the electroconductibility of slurry, also the handlebar conducting particles is to the trend of nano level development.
Since the eighties, the application of precious metal slurry in electronic industry obtained developing rapidly, and it is the important materials of preparation microelectronic element.The exploitation of the electric slurry of various super quality and competitive price and listing will promote the development of printed wiring board, hybrid integrated circuit and even electronic component industry greatly.The preparation of the composition of electric slurry and proportioning and powder all belongs to claim, at present, the research of slurry and production mainly concentrate on a few countries such as U.S., day, moral, as E.I.Du Pont Company, produce various slurry 800-900 kinds per year, about 1000 tons of output, sales volume accounts for about 50% of world market, nearly tens million of dollars of the funds that drop into aspect scientific and technological in the said firm every year now can be produced more than 100 kind of metal-powder, more than 200 kind of glass powder throughout the year; Japan is present unique slurry big country that can contend with the U.S., and there are Sumitomo Metal Industries mine, clear flourish chemistry, Tanaka's precious metal institute, Murata Manufacturing Co. Ltd., TAIYO YUDAN, Hitachi chemical, Toshiba's chemistry, FUKUDA METAL's powder, Mitsubishi's metal, NEC, TDK etc. in its famous slurry company.China went out to begin trial-production and uses the precious metal thick film ink from the sixties.Some units that with the Kunming Institute of Precious Metals are representative have successively developed series product such as resistance slurry, electrocondution slurry, binding paste, and set up microelectronics precious metal thick film ink production line, the Ag slurry, Ag-Pd slurry and the ruthenium that have formed certain scale are the throughput of resistance slurry.But it seems that totally domestic situation is the growth requirement that the electric slurry industry Situation seriously lags behind electronics and information industry.Mainly show: the electric slurry product, though can satisfy present demestic user's needs substantially, portioned product has also had certain strength and level, but compare with world level, also have the very big gap and the small scale of product, kind is less, kind is single, and quality, performance can not satisfy user's needs fully, reaches the scale and benefit of industry far away; Technology and equipment are low, and production unit falls behind, and is in state hand-manipulated substantially; The unit that has independent intellectual property right and patent is less, is imitated mostly and repeatability production, does not reach large-scale production as yet; Stable in quality product waits further effort at aspects such as blank preparation technics and equipment, the examination and test of products, quality controls
At present, the import manufacturer of conductive silver paste mainly contains U.S. Acheson, Japanese Asahi, Doctite, the prosperous star of Korea S.Homemade precious silver is arranged, receive into, converge rich, general strong etc.Existing electric slurry is with containing a large amount of heavy metal leads in the low-melting-point glass, lead is one of human 6 kinds of metals that use the earliest, it is bigger to human health risk, can gather in vivo and cause lead poisoning, saturnine effect is quite slow and toxicity is hidden, is not easy to be perceiveed before toxicity presents.The living environment of depending on for existence for the better maintaining mankind, realize continuous development of society economy, the numerous and confused environmental protection policy that is fit to oneself of formulating of developed country, electronic product to its production and import carries out the environmental protection restriction, therefore, develop unleaded environmental-friendly conductive sizing agent and have important economic benefit and social benefit with mineral binder bond.
[summary of the invention]
Main purpose of the present invention is to overcome the deficiency of existing copper electrocondution slurry with mineral binder bond, provide a kind of computer circuits substrate copper electrocondution slurry with mineral binder bond and preparation method thereof, had the advantages that gas can be got rid of fully, resistance to air loss is good and bonding force is strong.
The objective of the invention is to be achieved through the following technical solutions:
A kind of mineral binder bond that is used for computer realm, raw materials by weight consists of: SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%;
Described SiO
2Be preferably 25～30%, the best is 28%;
Described Al
2O
3Be preferably 10～15%, the best is 12%;
Described MgO is preferably 15～25%, and the best is 21%;
Described B
2O
3Be preferably 10～15%, the best is 12%;
Described BaO is preferably 8～15%, and the best is 13%;
Described ZnO is preferably 2～5%, and the best is 3%;
Described V
2O
5Be preferably 2～6%, the best is 4%;
Described SrO is preferably 1～3%, and the best is 2%;
Described Li
2O is preferably 2～5%, and the best is 3.5%;
Described Sb
2O
3Be preferably 0.5～1.5%, the best is 1%;
Described Co
3O
4Be preferably 0.3～0.7%, the best is 0.5%;
Described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%;
Described V
2O
5, Li
2Total weight percent of O is 3～8%.
Another object of the present invention is to provide a kind of above-mentioned a kind of preparation method who is used for the mineral binder bond of computer realm that is used for, concrete steps are:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃～1550 ℃ electric furnace, insulation 2～6h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
The positively effect of a kind of mineral binder bond that is used for computer realm of the present invention and preparation method thereof is:
(1) the present invention is not leaded, satisfies the environmental requirement of WEEE, RoHS instruction, can be used for the bonding phase of electrocondution slurry under the lower glass transition temperature of maintenance;
(2) applied widely, have the performance setting range of broad, simultaneously can also with the glass that conforms to the coefficient of expansion in this temperature, pottery, metal sealing, sealing property is good;
(3) test result shows, not only has thermal expansivity suitable and that be easy to adjust, suitable softening temperature, also has excellent chemical stability, have very strong competitive power aspect unleaded and the excellent performance especially, having the high advantage of cost performance, having market development prospect widely;
[embodiment]
Below by specific embodiment technical scheme of the present invention is described in detail.
Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
The present invention overcomes in the composition of the mineral binder bond of the shortcoming of short circuit and bubble proposition, does not at first contain Bi
2O
3Deng the composition that can form eutectic mixture with CuO, secondly be to improve the glass fusing point, the low melting point lead glass that discards tradition is crystallization at last, and softening temperature is improved, organism is got rid of enough spaces.
The invention provides a kind of mineral binder bond that is used for computer realm and preparation method thereof, have the advantages that gas can be got rid of fully, resistance to air loss is good and bonding force is strong, to satisfy market the demand of copper electrocondution slurry with mineral binder bond.
The objective of the invention is to be achieved through the following technical solutions:
A kind of mineral binder bond that is used for computer realm, raw materials by weight consists of: SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%;
Described SiO
2Be preferably 25～30%, the best is 28%;
Described Al
2O
3Be preferably 10～15%, the best is 12%;
Described MgO is preferably 15～25%, and the best is 21%;
Described B
2O
3Be preferably 10～15%, the best is 12%;
Described BaO is preferably 8～15%, and the best is 13%;
Described ZnO is preferably 2～5%, and the best is 3%;
Described V
2O
5Be preferably 2～6%, the best is 4%;
Described SrO is preferably 1～3%, and the best is 2%;
Described Li
2O is preferably 2～5%, and the best is 3.5%;
Described Sb
2O
3Be preferably 0.5～1.5%, the best is 1%;
Described Co
3O
4Be preferably 0.3～0.7%, the best is 0.5%;
Described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%;
Described V
2O
5, Li
2Total weight percent of O is 3～8%.
The peak temperature of the sintering temperature of described a kind of mineral binder bond that is used for computer realm is 880 ℃, and the time is 10min, uses the traditional method silk screen printing, carries out under protection of nitrogen gas.
Embodiment 1
One, the raw material composition is by weight percentage:
SiO
2Be 28%, Al
2O
3Be 12%, MgO is 21%, B
2O
3Be 12%, BaO is 13%, and ZnO is 3%, V
2O
5Be 4%, SrO is 2%, Li
2O is 3.5%, Sb
2O
3Be 1%, Co
3O
4Be 0.5%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1400 ℃ electric furnace, insulation 4h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 88.5 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 2
One, the raw material composition is by weight percentage:
SiO
2Be 21%, Al
2O
3Be 17%, MgO is 26%, B
2O
3Be 18%, BaO is 9%, and ZnO is 2%, V
2O
5Be 3%, SrO is 1%, Li
2O is 2%, Sb
2O
3Be 0.7%, Co
3O
4Be 0.3%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃ electric furnace, insulation 3h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 90.4 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 3
One, the raw material composition is by weight percentage:
SiO
2Be 31%, Al
2O
3Be 16%, MgO is 22%, B
2O
3Be 9%, BaO is 13%, and ZnO is 2%, V
2O
5Be 2%, SrO is 3%, Li
2O is 2%, Sb
2O
3Be 0.6%, Co
3O
4Be 0.4%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1400 ℃ electric furnace, insulation 3h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 87.0 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 4
One, the raw material composition is by weight percentage:
SiO
2Be 35%, Al
2O
3Be 11%, MgO is 20%, B
2O
3Be 10%, BaO is 13%, and ZnO is 4%, V
2O
5Be 3%, SrO is 2%, Li
2O is 1%, Sb
2O
3Be 0.5%, Co
3O
4Be 0.5%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1500 ℃ electric furnace, insulation 4h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 86.5 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 5
One, the raw material composition is by weight percentage:
SiO
2Be 38%, Al
2O
3Be 9%, MgO is 18%, B
2O
3Be 11%, BaO is 11%, and ZnO is 4%, V
2O
5Be 2%, SrO is 3%, Li
2O is 3%, Sb
2O
3Be 0.4%, Co
3O
4Be 0.6%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1550 ℃ electric furnace, insulation 5h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 83.4 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
It should be noted that, the present invention can provide a kind of computer circuits substrate copper electrocondution slurry mineral binder bond that matches according to the characteristic of concrete seal, sealing materials and to the specific requirement of the temperature and the coefficient of expansion, obtains multiple a kind of computer circuits substrate copper electrocondution slurry mineral binder bond with different coefficients of expansion thereby its method is to select for use different components to constitute glass.
It should be noted last that: above embodiment only is illustrative rather than definitive thereof technical scheme of the present invention, although the present invention is had been described in detail with reference to the foregoing description, those of ordinary skill in the art is to be understood that, still can make amendment or be equal to replacement the present invention, and not breaking away from any modification or partial replacement of the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. a mineral binder bond that is used for computer realm is characterized in that, the component that raw materials by weight is formed is SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%.
2. as claimed in claim 1 a kind of with the mineral binder bond in the hand computer realm, it is characterized in that described SiO
2Be 25～30%; Described Al
2O
3Be 10～15%; Described MgO is 15～25%; Described B
2O
3Be 10～15%.
3. a kind of mineral binder bond that is used for computer realm as claimed in claim 2 is characterized in that described SiO
2Be 28%; Described Al
2O
3Be 12%; Described MgO is 21%; Described B
2O
3Be 12%.
4. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described BaO is 8～15%; Described ZnO is 2～5%; Described V
2O
5Be 2～6%; Described SrO is 1～3%.
5. a kind of mineral binder bond that is used for computer realm as claimed in claim 4 is characterized in that described BaO is 13%; Described ZnO is 3%; Described V
2O
5Be 4%; Described SrO is 2%.
6. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described Li
2O is 2～5%; Described Sb
2O
3Be 0.5～1.5%; Described Co
3O
4Be 0.3～0.7%.
7. a kind of mineral binder bond that is used for computer realm as claimed in claim 6 is characterized in that described Li
2O is 3.5%; Described Sb
2O
3Be 1%; Described Co
3O
4Be 0.5%.
8. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%.
9. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described V
2O
5, Li
2Total weight percent of O is 3～8%.
10. a kind of preparation method who is used for the mineral binder bond of computer realm as claimed in claim 1 is characterized in that, comprises the steps:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃～1550 ℃ electric furnace, insulation 2～6h stirs once every 1h at holding stage, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197939 CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197939 CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101701136A true CN101701136A (en) | 2010-05-05 |
| CN101701136B CN101701136B (en) | 2012-01-25 |
Family
ID=42156064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910197939 Expired - Fee Related CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102219455A (en) * | 2011-04-18 | 2011-10-19 | 宁波荣山新型材料有限公司 | Inorganic lightweight aggregate thermal insulation sheet material and preparation method thereof |
| CN103339211A (en) * | 2011-03-18 | 2013-10-02 | 霓佳斯株式会社 | Adhesive for inorganic fibers |
| US8821626B2 (en) | 2011-03-18 | 2014-09-02 | Nichias Corporation | Adhesive for inorganic fiber |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10158034A (en) * | 1996-10-04 | 1998-06-16 | S Ii C Kk | Crystallized glass for substrate of information recording disk |
| JP2007194122A (en) * | 2006-01-20 | 2007-08-02 | Sumitomo Electric Ind Ltd | Conductive paste and wiring board using it |
-
2009
- 2009-10-30 CN CN 200910197939 patent/CN101701136B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103339211A (en) * | 2011-03-18 | 2013-10-02 | 霓佳斯株式会社 | Adhesive for inorganic fibers |
| US8821626B2 (en) | 2011-03-18 | 2014-09-02 | Nichias Corporation | Adhesive for inorganic fiber |
| CN103339211B (en) * | 2011-03-18 | 2016-08-10 | 霓佳斯株式会社 | Inorfil bonding agent |
| CN102219455A (en) * | 2011-04-18 | 2011-10-19 | 宁波荣山新型材料有限公司 | Inorganic lightweight aggregate thermal insulation sheet material and preparation method thereof |
| CN102219455B (en) * | 2011-04-18 | 2013-02-27 | 宁波荣山新型材料有限公司 | Inorganic lightweight aggregate thermal insulation sheet material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101701136B (en) | 2012-01-25 |
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