CN101701136B - Inorganic adhesive used in field of computers and preparation method thereof - Google Patents
Inorganic adhesive used in field of computers and preparation method thereof Download PDFInfo
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- CN101701136B CN101701136B CN 200910197939 CN200910197939A CN101701136B CN 101701136 B CN101701136 B CN 101701136B CN 200910197939 CN200910197939 CN 200910197939 CN 200910197939 A CN200910197939 A CN 200910197939A CN 101701136 B CN101701136 B CN 101701136B
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- mineral binder
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Abstract
The invention relates to an inorganic adhesive used in the field of computer and a preparation method thereof. The inorganic adhesive comprises the following raw materials, by weight percent: 20-40% of SiO2, 5-20% of Al2O3, 5-30% of MgO, 1-20% of B2O3, 1-20% of BaO, 1-10% of ZnO, 1-10% of V2O5, 0.1-5% of SrO, 0.1-5% of Li2O, 0.1-2% of Sb2O3 and 0.1-1% of Co3O4; the preparation process comprises the following steps: weighing, material mixing, melting, tabletting, ball milling and sieving; and the invention has the characteristics of complete elimination of gas, good airtightness and strong bonding force.
Description
[technical field]
The invention belongs to field of computer technology, particularly a kind of mineral binder bond that is used for computer realm and preparation method thereof.
[background technology]
Electrocondution slurry is a kind of novel electron functional materials, in electronic industry, has a wide range of applications.With the charcoal element is the electrocondution slurry of conductive filler material, is mainly used in the printed resistor on the wiring board of making printed circuit board, thick film blended printed resistor and keyboard switch etc.China's electrocondution slurry and external having a long way to go, mainly show as kind few, yield poorly, form compatible mutually tandem product.China develops the higher and commercial electrocondution slurry of ability of level at present, because performance and use characteristics such as the difference of sintering temperature and set time have limited them in electronic industry, particularly the widespread use in the electronic devices and components industry.
Electrocondution slurry is the basis of development electronic devices and components; Be encapsulation, electrode and interconnected critical material; Be a kind of high-tech electronics functional materials that integrates metallurgy, chemical industry, electronic technology, be mainly used in the every field of electron trades such as making thick film integrated circuit, sensor, electrical condenser, potentiometer, thick film hybrid integrated circuit, surface installation technique.
Electrocondution slurry comprises burning infiltration type electrocondution slurry and curing conductive resin (electrically conductive ink) two big classes.Burning infiltration type electrocondution slurry is mainly used in the electrode of electronic ceramics element (like ceramic condenser, thermistor, voltage dependent resistor etc.) and the encapsulation of electron device etc., and the burning infiltration temperature is generally about 500-1000 ℃.The curing conductive resin is mainly used in lead, Electronic Packaging of flexible circuit etc., and solidification value is about room temperature-200 ℃.Burning infiltration type electrocondution slurry is a kind of slurry of wide, the large usage quantity of purposes in the electron trade.Its kind is more, can be divided into by burning infiltration temperature difference: temperature of high temperature slurry (burning infiltration temperature＞800 ℃), middle temperature slurry (the burning infiltration temperature is 600-800 ℃) and low-temperature pulp (burning infiltration temperature＜600 ℃); Kind by using conductive filler material can be divided into base metal slurry and precious metal slurry.
The composition of slurry is by different application targets, and methods such as different characteristic requirement and use technology determine that its composition mainly is made up of inorganic adhesive, conductive filler material, this three bulk of organic carrier according to a certain percentage.Inorganic adhesive also is a glass powder, generally by SiO
2With some MOXs by a certain percentage after the melting mixing, the back of quenching is pulverized and is processed, and is the key component of electrocondution slurry.The adding of glass powder helps to reduce sintering temperature, strengthens the sticking power between slurry and substrate, and the performance of glass powder directly has influence on the performance of electrocondution slurry simultaneously.
Conductive filler material generally is made up of precious metal Ru, Pd, Au, Ag or base metal Cu, Ni, Zn, Al etc.Precious metal generally has good electrical conductivity, and is difficult for oxidized; And the base metal ratio is easier to oxidation, and its surface has layer oxide film usually.If when adding in the electrocondution slurry through high temperature sintering, these base metals are oxidation more easily just, certainly will influence the conductivity of electrocondution slurry like this to these metals.If but used precious metal in a large number, production cost would be risen.In addition, the sintering of base metal slurry generally carries out in the atmosphere of nitrogen or vacuum, and this technology also can increase cost, and also inconvenient in the operating process.What at present, study often is the lowpriced metallization of conductive filler material.In order to increase the electroconductibility of slurry, also the handlebar conducting particles is to the nano level Development Trend.
Since the eighties, the application of precious metal slurry in electronic industry obtained developing rapidly, and it is the important materials of preparation microelectronic element.The exploitation of the electric slurry of various super quality and competitive price and listing will promote the development of printed wiring board, hybrid integrated circuit and even electronic component industry greatly.The preparation of the composition of electric slurry and proportioning and powder all belongs to claim, and at present, the research of slurry and production mainly concentrate on few countries such as U.S.A, day, moral; Like E.I.Du Pont Company, produce various slurry 800-900 kinds per year, about 1000 tons of output; Sales volume accounts for about 50% of world market; Nearly tens million of dollars of the funds that drop into aspect scientific and technological in the said firm every year can be produced more than 100 kind of metal-powder, more than 200 kind of glass powder at present throughout the year; Japan is present unique slurry big country that can contend with the U.S., and there are Sumitomo Metal Industries mine, clear flourish chemistry, Tanaka's precious metal institute, Murata Manufacturing Co. Ltd., TAIYO YUDAN, Hitachi chemical, Toshiba's chemistry, FUKUDA METAL's powder, Mitsubishi's metal, NEC, TDK etc. in its famous slurry company.China went out to begin trial-production and uses the precious metal thick film ink from the sixties.Some units that with the Kunming Institute of Precious Metals are representative have successively developed series product such as resistance slurry, electrocondution slurry, binding paste; And set up microelectronics with precious metal thick film ink production line, the Ag slurry, Ag-Pd slurry and the ruthenium that have formed certain scale are the throughput of resistance slurry.But it seems that totally domestic situation is the growth requirement that the electric slurry industry Situation seriously lags behind electronics and information industry.Mainly show: the electric slurry product, though can satisfy present demestic user's needs basically, portioned product has also had certain strength and level; But compare with world level, also have the very big gap and the small scale of product; Kind is less; Kind is single, and quality, performance can not satisfy user's needs fully, reaches the scale and benefit of industry far away; Technology and equipment are low, and production unit falls behind, and is in state hand-manipulated basically; The unit that has independent intellectual property right and patent is less, is imitated and repeated production mostly, does not reach large-scale production as yet; Stable in quality product waits further effort at aspects such as blank preparation technics and equipment, the examination and test of products, quality controls
At present, the import manufacturer of conductive silver paste mainly contains U.S. Acheson, Japanese Asahi, Doctite, the prosperous star of Korea S.Homemade precious silver is arranged, receive into, converge rich, general strong etc.Existing electric slurry is with containing a large amount of heavy metal leads in the low-melting-point glass; Lead is one of human 6 kinds of metals that use the earliest; It is bigger to human health risk; Can gather in vivo and cause lead poisoning, saturnine effect quite slowly and also toxicity hidden, before toxicity appears, be not easy to be perceiveed.The living environment of depending on for existence for the better maintaining mankind; Realize continuous development of society economy; The numerous and confused environmental protection policy that is fit to oneself of formulating of developed country; Electronic product to its production and import carries out the environmental protection restriction, therefore, develops unleaded environmental-friendly conductive sizing agent and has important economic benefit and social benefit with mineral binder bond.
[summary of the invention]
Main purpose of the present invention is to overcome the deficiency of existing copper electrocondution slurry with mineral binder bond; Provide a kind of computer-electrical base board copper electrocondution slurry with mineral binder bond and preparation method thereof, had the advantages that gas can be got rid of fully, resistance to air loss is good and bonding force is strong.
The objective of the invention is to realize through following technical scheme:
A kind of mineral binder bond that is used for computer realm, raw materials by weight consists of: SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%;
Described SiO
2Be preferably 25～30%, the best is 28%;
Described Al
2O
3Be preferably 10～15%, the best is 12%;
Described MgO is preferably 15～25%, and the best is 21%;
Described B
2O
3Be preferably 10～15%, the best is 12%;
Described BaO is preferably 8～15%, and the best is 13%;
Described ZnO is preferably 2～5%, and the best is 3%;
Described V
2O
5Be preferably 2～6%, the best is 4%;
Described SrO is preferably 1～3%, and the best is 2%;
Described Li
2O is preferably 2～5%, and the best is 3.5%;
Described 8b
2O
3Be preferably 0.5～1.5%, the best is 1%;
Described Co
3O
4Be preferably 0.3～0.7%, the best is 0.5%;
Described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%;
Described V
2O
5, Li
2Total weight percent of O is 3～8%.
Another object of the present invention is to provide a kind of above-mentioned a kind of preparation method who is used for the mineral binder bond of computer realm that is used for, concrete steps are:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃～1550 ℃ electric furnace, insulation 2～6h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
The positively effect of a kind of mineral binder bond that is used for computer realm of the present invention and preparation method thereof is:
(1) the present invention is not leaded, satisfies the environmental requirement of WEEE, RoHS instruction, can under the lower glass transition temperature of maintenance, be used for the bonding phase of electrocondution slurry;
(2) applied widely, have the performance setting range of broad, simultaneously can also with the glass that conforms to the coefficient of expansion in this temperature, pottery, metal sealing, sealing property is good;
(3) test result shows, not only has thermal expansivity suitable and that be easy to adjust, suitable softening temperature; Also has excellent chemicalstability; Have very strong competitive power aspect unleaded and the excellent performance especially, having the high advantage of cost performance, having market development prospect widely;
[embodiment]
Below through concrete embodiment technical scheme of the present invention is carried out detailed explanation.
Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
The present invention overcomes in the composition of the mineral binder bond of the shortcoming of short circuit and bubble proposition, does not at first contain Bi
2O
3Deng the composition that can form eutectic mixture with CuO, secondly be to improve the glass fusing point, the lower melting point lead glass that discards tradition is crystallization at last, and softening temperature is improved, organism is got rid of has enough spaces.
The invention provides a kind of mineral binder bond that is used for computer realm and preparation method thereof, have the advantages that gas can be got rid of fully, resistance to air loss is good and bonding force is strong, to satisfy market the demand of copper electrocondution slurry with mineral binder bond.
The objective of the invention is to realize through following technical scheme:
A kind of mineral binder bond that is used for computer realm, raw materials by weight consists of: SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%;
Described SiO
2Be preferably 25～30%, the best is 28%;
Described Al
2O
3Be preferably 10～15%, the best is 12%;
Described MgO is preferably 15～25%, and the best is 21%;
Described B
2O
3Be preferably 10～15%, the best is 12%;
Described BaO is preferably 8～15%, and the best is 13%;
Described ZnO is preferably 2～5%, and the best is 3%;
Described V
2O
5Be preferably 2～6%, the best is 4%;
Described SrO is preferably 1～3%, and the best is 2%;
Described Li
2O is preferably 2～5%, and the best is 3.5%;
Described Sb
2O
3Be preferably 0.5～1.5%, the best is 1%;
Described Co
3O
4Be preferably 0.3～0.7%, the best is 0.5%;
Described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%;
Described V
2O
5, Li
2Total weight percent of O is 3～8%.
The peak temperature of the sintering temperature of described a kind of mineral binder bond that is used for computer realm is 880 ℃, and the time is 10min, uses the traditional method silk screen printing, under protection of nitrogen gas, carries out.
Embodiment 1
One, the raw material composition is by weight percentage:
SiO
2Be 28%, Al
2O
3Be 12%, MgO is 21%, B
2O
3Be 12%, BaO is 13%, and ZnO is 3%, V
2O
5Be 4%, SrO is 2%, Li
2O is 3.5%, Sb
2O
3Be 1%, Co
3O
4Be 0.5%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1400 ℃ electric furnace, insulation 4h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 88.5 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 2
One, the raw material composition is by weight percentage:
SiO
2Be 21%, Al
2O
3Be 17%, MgO is 26%, B
2O
3Be 18%, BaO is 9%, and ZnO is 2%, V
2O
5Be 3%, SrO is 1%, Li
2O is 2%, Sb
2O
3Be 0.7%, Co
3O
4Be 0.3%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃ electric furnace, insulation 3h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 90.4 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 3
One, the raw material composition is by weight percentage:
SiO
2Be 31%, Al
2O
3Be 16%, MgO is 22%, B
2O
3Be 9%, BaO is 13%, and ZnO is 2%, V
2O
5Be 2%, SrO is 3%, Li
2O is 2%, Sb
2O
3Be 0.6%, Co
3O
4Be 0.4%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1400 ℃ electric furnace, insulation 3h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 87.0 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 4
One, the raw material composition is by weight percentage:
SiO
2Be 35%, Al
2O
3Be 11%, MgO is 20%, B
2O
3Be 10%, BaO is 13%, and ZnO is 4%, V
2O
5Be 3%, SrO is 2%, Li
2O is 1%, Sb
2O
3Be 0.5%, Co
3O
4Be 0.5%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1500 ℃ electric furnace, insulation 4h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 86.5 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
Embodiment 5
One, the raw material composition is by weight percentage:
SiO
2Be 38%, Al
2O
3Be 9%, MgO is 18%, B
2O
3Be 11%, BaO is 11%, and ZnO is 4%, V
2O
5Be 2%, SrO is 3%, Li
2O is 3%, Sb
2O
3Be 0.4%, Co
3O
4Be 0.6%.
Two, preparation method:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1550 ℃ electric furnace, insulation 5h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Three, test result:
The coefficient of expansion: 83.4 * 10
-7/ ℃ (300 ℃)
Sintering temperature: 880 ℃ (peak temperature, 10min)
Particle diameter: D
50＜2 μ m, D
90＜5 μ m.
It should be noted that; The present invention can provide a kind of computer-electrical base board copper electrocondution slurry that matches to use mineral binder bond according to the characteristic of concrete seal, sealing materials and to the specific requirement of the temperature and the coefficient of expansion, obtains multiple a kind of computer-electrical base board copper electrocondution slurry with different coefficients of expansion and uses mineral binder bond thereby its method is to select for use different components to constitute glass.
It should be noted last that: above embodiment only is illustrative rather than definitive thereof technical scheme of the present invention; Although the present invention is specified with reference to the foregoing description; Those of ordinary skill in the art is to be understood that; Still can make amendment or be equal to replacement the present invention, and not break away from any modification or the local replacement of the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. a mineral binder bond that is used for computer realm is characterized in that, the component that raw materials by weight is formed is SiO
2Be 20～40%, Al
2O
3Be 5～20%, MgO is 5～30%, B
2O
3Be 1～20%, BaO is 1～20%, and ZnO is 1～10%, V
2O
5Be 1～10%, SrO is 0.1～5%, Li
2O is 0.1～5%, Sb
2O
3Be 0.1～2%, Co
3O
4Be 0.1～1%.
2. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described SiO
2Be 25～30%; Described Al
2O
3Be 10～15%; Described MgO is 15～25%; Described B
2O
3Be 10～15%.
3. a kind of mineral binder bond that is used for computer realm as claimed in claim 2 is characterized in that described SiO
2Be 28%; Described Al
2O
3Be 12%; Described MgO is 21%; Described B
2O
3Be 12%.
4. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described BaO is 8～15%; Described ZnO is 2～5%; Described V
2O
5Be 2～6%; Described SrO is 1～3%.
5. a kind of mineral binder bond that is used for computer realm as claimed in claim 4 is characterized in that described BaO is 13%; Described ZnO is 3%; Described V
2O
5Be 4%; Described SrO is 2%.
6. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described Li
2O is 2～5%; Described Sb
2O
3Be 0.5～1.5%; Described Co
3O
4Be 0.3～0.7%.
7. a kind of mineral binder bond that is used for computer realm as claimed in claim 6 is characterized in that described Li
2O is 3.5%; Described Sb
2O
3Be 1%; Described Co
3O
4Be 0.5%.
8. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described SiO
2, Al
2O
3With total weight percent of MgO greater than 50%.
9. a kind of mineral binder bond that is used for computer realm as claimed in claim 1 is characterized in that described V
2O
5, Li
2Total weight percent of O is 3～8%.
10. a kind of preparation method who is used for the mineral binder bond of computer realm as claimed in claim 1 is characterized in that, comprises the steps:
(1) weight percent according to each component takes by weighing each raw material;
(2) with the raw material thorough mixing that is taken by weighing;
(3) mixed compound is put into crucible, put into furnace temperature then and be 1350 ℃～1550 ℃ electric furnace, insulation 2～6h stirs once at a distance from 1h in that holding stage is every, stirs 5min at every turn;
(4) glass metal after will melting is poured tabletting machine into and is pressed into thin slice or pours quenching in the cold water into;
(5) sheet or granular glass are put into the ball mill ball milling;
(6) glass powder behind the ball milling is sieved, detects, packs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197939 CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197939 CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101701136A CN101701136A (en) | 2010-05-05 |
| CN101701136B true CN101701136B (en) | 2012-01-25 |
Family
ID=42156064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910197939 Expired - Fee Related CN101701136B (en) | 2009-10-30 | 2009-10-30 | Inorganic adhesive used in field of computers and preparation method thereof |
Country Status (1)
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|---|---|
| CN (1) | CN101701136B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4814402B1 (en) * | 2011-03-18 | 2011-11-16 | ニチアス株式会社 | Inorganic fiber adhesive |
| US8821626B2 (en) | 2011-03-18 | 2014-09-02 | Nichias Corporation | Adhesive for inorganic fiber |
| CN102219455B (en) * | 2011-04-18 | 2013-02-27 | 宁波荣山新型材料有限公司 | Inorganic lightweight aggregate thermal insulation sheet material and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181359A (en) * | 1996-10-04 | 1998-05-13 | Sec株式会社 | Crystallized glass for substrate of information-recording disk |
| CN101310344A (en) * | 2006-01-20 | 2008-11-19 | 住友电气工业株式会社 | Conductive paste and wiring board using same |
-
2009
- 2009-10-30 CN CN 200910197939 patent/CN101701136B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181359A (en) * | 1996-10-04 | 1998-05-13 | Sec株式会社 | Crystallized glass for substrate of information-recording disk |
| CN101310344A (en) * | 2006-01-20 | 2008-11-19 | 住友电气工业株式会社 | Conductive paste and wiring board using same |
Non-Patent Citations (3)
| Title |
|---|
| JP平2-188444A 1990.07.24 |
| JP特开2006-312568A 2006.11.16 |
| 付明等.用无铅玻璃料研制环保型导电浆料.《华中科技大学学报（自然科学版）》.2007,第35卷51-57. * |
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| Publication number | Publication date |
|---|---|
| CN101701136A (en) | 2010-05-05 |
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