CN101698480B - Method for producing polysilicon by adopting square silicon chip and device thereof - Google Patents
Method for producing polysilicon by adopting square silicon chip and device thereof Download PDFInfo
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- CN101698480B CN101698480B CN2009102725635A CN200910272563A CN101698480B CN 101698480 B CN101698480 B CN 101698480B CN 2009102725635 A CN2009102725635 A CN 2009102725635A CN 200910272563 A CN200910272563 A CN 200910272563A CN 101698480 B CN101698480 B CN 101698480B
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Abstract
The invention discloses a method for producing polysilicon by adopting square silicon chip and a device thereof. In the method, after one end of square silicon chip is chamfered an angle or round, the square silicon chip is inserted into graphite clamp claws of a clamping device, the other end of the square silicon chip is chamfered a V-shaped groove, a lap joint beam is put into the V-shaped grooves of two adjacent square silicon chips to obtain an n-shaped conductive loop. The invention has the advantages of reliable assembly and rapidity, overcomes easy breakage of silicon chip, solves the problem of assembling silicon chip on a reducing furnace, and the problem of chip falling when opening the furnace and at the early stage of production, and ensuring the success rate of opening the furnace to be over 99%. The invention adopts square silicon chips to produce polysilicon, thus reducing production cost, and improving production efficiency due to the convenience of silicon chip processing.
Description
Technical field
The present invention relates to field of polysilicon production, particularly a kind of side of employing silicon core is produced the method and apparatus of polysilicon.
Background technology
Domestic columniform silicon cores that adopt in production of polysilicon at present more, the problem of existence is to produce the restriction that is subjected to silicon core stove per unit area yield in enormous quantities, can't satisfy the needs of producing polysilicon plant produced more than 1000 tons per year; Adopt the large-scale wire cutting machine can large batch of producer silicon core, but does not still have special production assembly method and clamping device at present at square silicon core.
Summary of the invention
Technical problem to be solved by this invention provides the method and apparatus that a kind of side of employing silicon core is produced polysilicon, assembly problem that can solution party's silicon core, and open stove and production initial stage and fall the problem of rod.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of side of employing silicon core is produced the method for polysilicon, may further comprise the steps: behind square silicon core one chamfer or rounding, be inserted in the graphite card lobe in the clamping device, side's silicon core the other end is opened V-shaped groove, put into the V-shaped groove of adjacent two square silicon cores with overlapping crossbeam, obtain H type galvanic circle.
Its angle of described V-shaped groove is 90 °.
Described V-shaped groove is by the diagonal setting.
Described overlap joint crossbeam is short square silicon core.
A kind of clamping device, graphite card lobe is installed on the graphite seat by the graphite cap, and the graphite cap is connected with the graphite seat by screw thread.
A kind of graphite card lobe, graphite card lobe center is provided with vertical circular hole and cross recess.
The axis of circular hole and cross recessed central lines in the graphite card lobe.
A kind of side of employing provided by the invention silicon core is produced the method and apparatus of polysilicon, by with behind square silicon core one chamfer or the rounding, be inserted in the graphite card lobe in the clamping device, side's silicon core the other end is opened V-shaped groove, put into the V-shaped groove of adjacent two square silicon cores with overlapping crossbeam, obtain ∏ type galvanic circle.Have assembling reliably, advantage easily, overcome silicon core brashness, solve the problem of the reduction furnace side of assembling silicon core, and open stove and production initial stage and fall the problem of rod, guarantee the blow-on success ratio more than 99%, the present invention produces polysilicon by the side's of employing silicon core and can reduce production costs, because of square core silicon is processed more convenient, can be mass-produced, also improved production efficiency.
On graphite card lobe, open vertical circular hole and cross recess, can on graphite card lobe, form eight knuckle lines, wherein the verticality of circular hole must be guaranteed, can reduce down the probability of rod like this, square silicon core through chamfering or rounding can easier be inserted in the middle of eight knuckle lines of graphite card lobe, between graphite card lobe and the square silicon core is shrink-fit, guarantee the clamping of graphite card lobe the other side silicon core, article eight, forming reliable line between knuckle line and the square silicon core contacts, can guarantee that the contact in conductivity is reliable for effect, avoid that local temperature rise to occur too high because of loose contact.
On square silicon core, open V-shaped groove, and become 90 ° of angles, and press the diagonal lines setting, can guarantee and short more reliable connection of silicon plug, can avoid equally that local temperature rise to occur too high because of loose contact as the overlap joint crossbeam.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is a clamping device structural representation among the present invention;
Fig. 2 is a graphite card lobe front view among the present invention;
Fig. 3 is a graphite card lobe vertical view among the present invention;
Fig. 4 is a square silicon core front view among the present invention;
Fig. 5 is a square silicon core B-B view among the present invention;
Fig. 6 is a square silicon core A-A view among the present invention;
Fig. 7 is the side-view that square silicon core is connected with the overlap joint crossbeam among the present invention;
Fig. 8 is a whole syndeton synoptic diagram among the present invention.
Embodiment
In Fig. 8, a kind of side of employing silicon core is produced the method for polysilicon, may further comprise the steps: behind square silicon core 4 one chamfers or rounding, be inserted in the graphite card lobe 3 in the clamping device 6, side's silicon core 4 the other ends are opened V-shaped groove 41, put into the V-shaped groove 41 of adjacent two square silicon cores 4 with overlapping crossbeam 5, obtain ∏ type galvanic circle.
In Fig. 4, Fig. 5, Fig. 6 and Fig. 7, described V-shaped groove 41 its angles are 90 °.Described V-shaped groove 41 is by the diagonal setting.Described overlap joint crossbeam 5 is short square silicon core.Like this can be just in time in the side's of putting into silicon core 4 vertical V-shaped grooves 41 with overlap joint crossbeam 5, it is reliable that height unanimity by the side's of guaranteeing silicon core 4 can guarantee to connect, comprise that power connects reliable and be electrically connected reliable, wherein power connects reliably can reduce and fall the problem of rod in the production process, and a square silicon core 4 can provide support for connected another root side's silicon core 4.
A kind of clamping device, graphite card lobe 3 is installed on the graphite seat 1 by graphite cap 2, and graphite cap 2 is connected with graphite seat 1 by screw thread.
A kind of graphite card lobe, graphite card lobe 3 centers are provided with vertical circular hole and cross recess.
The axis of circular hole and cross recessed central lines in the graphite card lobe 3.The circular hole verticality at graphite card lobe 3 centers need be guaranteed, this is the key that reduces excellent rate, the cross recess of She Zhiing can be guaranteed the clamping of graphite card lobe 3 the other side's silicon cores 4 simultaneously, be that shrink-fit is to guarantee clamping between graphite card lobe 3 and the square silicon core 4, circular hole and cross recess can make and form eight knuckle lines on the graphite card lobe 3, square silicon core 4 through chamfering or rounding can easier be inserted in the middle of eight knuckle lines of graphite card lobe 3, article eight, forming reliable line between knuckle line and the square silicon core 4 contacts, can guarantee that the contact in conductivity is reliable, avoid that local temperature rise to occur too high because of loose contact.
Claims (5)
1. method that the side of employing silicon core is produced polysilicon, it is characterized in that may further comprise the steps: behind square silicon core (4) one chamfers or rounding, be inserted in the graphite card lobe (3) in the clamping device (6), side's silicon core (4) the other end is opened V-shaped groove (41), to overlap crossbeam (5) and put into the V-shaped groove (41) of adjacent two square silicon cores (4), described overlap joint crossbeam (5) is short square silicon core, obtains ∏ type galvanic circle.
2. a kind of side of employing according to claim 1 silicon core is produced the method for polysilicon, and it is characterized in that: its angle of described V-shaped groove (41) is 90 °.
3. a kind of side of employing according to claim 1 and 2 silicon core is produced the method for polysilicon, it is characterized in that: described V-shaped groove (41) is by the diagonal setting.
4. a kind of side of employing according to claim 1 silicon core is produced the method for polysilicon, and it is characterized in that: graphite card lobe (3) center is provided with vertical circular hole and cross recess.
5. a kind of side of employing according to claim 4 silicon core is produced the method for polysilicon, it is characterized in that: the axis and the cross recessed central lines of circular hole in the graphite card lobe (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102725635A CN101698480B (en) | 2009-10-28 | 2009-10-28 | Method for producing polysilicon by adopting square silicon chip and device thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102725635A CN101698480B (en) | 2009-10-28 | 2009-10-28 | Method for producing polysilicon by adopting square silicon chip and device thereof |
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| Publication Number | Publication Date |
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| CN101698480A CN101698480A (en) | 2010-04-28 |
| CN101698480B true CN101698480B (en) | 2011-06-15 |
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| CN2009102725635A Active CN101698480B (en) | 2009-10-28 | 2009-10-28 | Method for producing polysilicon by adopting square silicon chip and device thereof |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103158201B (en) * | 2011-12-09 | 2016-03-02 | 洛阳金诺机械工程有限公司 | The bridging method of a kind of hollow silicon core and solid silicon core |
| CN103160926A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Method for growing polycrystalline silicon by virtue of hollow silicon core |
| CN103158200B (en) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | A kind of bridging method of C-shaped silicon core |
| CN103158202B (en) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | A kind of bridging method of hollow silicon core |
| CN104264221A (en) * | 2014-09-10 | 2015-01-07 | 河南协鑫光伏科技有限公司 | Square silicon core material for producing primary polysilicon and preparation method thereof |
| CN108545746A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of cross silicon core assembly of entirety and its bridging method |
| CN108545747A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of plug-in silicon core assembly |
| CN108675303B (en) * | 2018-08-14 | 2019-07-26 | 亚洲硅业（青海）有限公司 | A kind of silicon core clamping device for polysilicon reduction furnace and clamp method |
| CN110937606B (en) * | 2019-12-16 | 2020-10-16 | 亚洲硅业(青海)股份有限公司 | Silicon core of reduction furnace and method and device for mounting silicon core cross beam |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005123583A1 (en) * | 2004-06-22 | 2005-12-29 | Shin-Etsu Film Co., Ltd. | Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method |
| CN201195766Y (en) * | 2008-05-15 | 2009-02-18 | 北京京运通科技有限公司 | Novel polysilicon furnace |
| CN101445239A (en) * | 2007-11-28 | 2009-06-03 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| CN101540293A (en) * | 2008-03-20 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip-positioning method and positioning mechanism used in semiconductor manufacturing process |
-
2009
- 2009-10-28 CN CN2009102725635A patent/CN101698480B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005123583A1 (en) * | 2004-06-22 | 2005-12-29 | Shin-Etsu Film Co., Ltd. | Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method |
| CN101445239A (en) * | 2007-11-28 | 2009-06-03 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| CN101540293A (en) * | 2008-03-20 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip-positioning method and positioning mechanism used in semiconductor manufacturing process |
| CN201195766Y (en) * | 2008-05-15 | 2009-02-18 | 北京京运通科技有限公司 | Novel polysilicon furnace |
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| CN101698480A (en) | 2010-04-28 |
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