CN101697365B - Method for manufacturing resonant-enhanced far-infrared detector - Google Patents
Method for manufacturing resonant-enhanced far-infrared detector Download PDFInfo
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- CN101697365B CN101697365B CN2009103092288A CN200910309228A CN101697365B CN 101697365 B CN101697365 B CN 101697365B CN 2009103092288 A CN2009103092288 A CN 2009103092288A CN 200910309228 A CN200910309228 A CN 200910309228A CN 101697365 B CN101697365 B CN 101697365B
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Abstract
The invention discloses a method for manufacturing a resonant-enhanced far-infrared detector, which belongs to the technical field of semiconductors. The method comprises: determining the type of a detector to be grown and the structure of reflectors, wherein the detector is a homojunction internal light emission detector, a top reflector is an interface formed by the air and the detector, and a bottom reflector is a reflector which has high reflectivity and phase matching at a far-infrared band; obtaining a quantum efficiency in a cavity by using a Fresnel coefficient matrix and a dielectricfunction module and by numeric calculation, and obtaining optimized structural parameters and material parameters of the detector and the bottom reflector by maximizing the quantum efficiency in the resonant cavity; and growing the resonant-enhanced far-infrared detector by a molecular beam expitaxy method according to the obtained optimized parameters. The method overcomes the drawback of generally low quantum efficiency of far-infrared detectors and greatly improves the quantum efficiency of the detector.
Description
Technical field
What the present invention relates to is the method in a kind of semiconductor Detection Techniques field, specifically is a kind of preparation method of resonant-enhanced far-infrared detector.
Background technology
Infrared and submillimeter region (30-1000 micron) has been contained celestial bodies motion and solid infra-red material many information, therefore high performance far infrared deterctor is with a wide range of applications in the researchs such as Infrared Physics and new material exploration in astrophysics.In recent years, the notion of a novel homojunction internal reflection far infrared deterctor is suggested and is well developed.At present, utilization maturing material GaAs, the homojunction detector of Si successfully realize, and the performance of these detectors can be comparable to the extrinsic photodetector of traditional germanium and stop impurity detector (BIB).Quantum efficiency is to weigh the important indicator of detector performance, but the quantum efficiency of the homojunction detector of having realized is generally on the low side, and quantum efficiency is lower near cut-off wavelength.Low quantum efficiency has limited the practical application of detector, and therefore further improving quantum efficiency is the task of top priority.
Find after deliberation, on photodetector, apply a pair of speculum and constitute the quantum efficiency that resonant cavity (RCE) structure can effectively improve detector.Find through literature search prior art, M.S.Unlu and S.Strite is at (1995) 607 pages of reports of J.Appl.Phys. (applicating physical magazine) the 78th volume, applying a pair of speculum at photodetector, be top mirror and bottom mirror, the structure that has formed resonant cavity like this can obviously improve the quantum efficiency of detector.Its principle is to utilize cavity resonator structure to make incident light form repeatedly reflection in cavity and through the absorption region, thereby is fully absorbed.Resonant cavity is widely applied on near-infrared and middle Infrared Detectors, but still is limited in the application of far infrared band.Find by retrieval, be directed to far infrared deterctor, people such as Y.H.Zhang are top mirror at (2003) 1129 pages of interfaces that proposed to form with detector and air of Appl.Phys.Lett. (Applied Physics wall bulletin) the 82nd volume, and bottom mirror is made up of the GaAs of bottom electrode layer and the multiply periodic non-doping below it.This cavity resonator structure has effectively improved quantum efficiency, but because the reflectivity of bottom mirror is big inadequately, has limited quantum efficiency and further improved.
Summary of the invention
The present invention is directed to the prior art above shortcomings, a kind of preparation method of resonant-enhanced far-infrared detector is provided, the quantum that overcomes far infrared deterctor is imitated general deficiency on the low side, must improve the quantum efficiency of this detector greatly.
The present invention is achieved by the following technical solutions, the present invention includes following steps:
(1) the definite type photodetector that will grow and the structure of speculum: the type of detector is a photoemissive detector in the homojunction, top mirror is the interface that is formed by air and detector, and bottom mirror is the speculum in far infrared band reflectivity height and phase matched.
(2) utilize Fresnel coefficient matrix and dielectric function model, obtain quantum efficiency in the cavity by numerical computations.By making the quantum efficiency maximization in the resonant cavity, the detector that is optimized and the structural parameters of bottom mirror and material parameter.
(3) according to the parameter that is optimized, with the molecular beam epitaxy resonant-enhanced far-infrared detector (comprising detector and speculum) of growing
In the step (1), described detector is a photoemissive detector in the n p type gallium arensidep homojunction, the detector that the emission layer of the doping that it was replaced by the multicycle and the assertive evidence layer of non-doping are formed; Described speculum has gallium arsenide layer, the metal level of highly doped bottom electrode layer, non-doping from top to bottom.
In the step (2), from basic Fresnel coefficient matrix, situation at multi-layer film structure and light incident, derive the computing formula of the reflectivity R and the transmissivity T of every bed boundary, and according to the dielectric function model, in conjunction with the parameter of detector, calculate the reflectivity of far infrared band detector surface and the light transmission T on detector cavity and the bottom mirror interface, just can obtain absorptivity in the detector cavity by formula A=1-T-R.Try to achieve internal quantum η b and potential barrier collection rate η c by formula, so just obtain the total quantum efficiency η total=A * η b * η c in the detector cavity body.By making the quantum efficiency maximum in the detector cavity, and take the constraint of feasibility into consideration, optimize panel detector structure and bottom mirror structure.
In the step (3), obtain structural parameters and doping content, utilize the molecular beam epitaxial growth device to prepare fir detector structure and bottom mirror structure, so just obtain a quantum efficiency than higher resonant-enhanced far-infrared detector according to optimization.
The present invention is by optimizing panel detector structure and apply the raising that metallic mirror has been realized the quantum efficiency in the far infrared deterctor chamber on its detector, thereby improved the responsiveness of this detector, performances such as detectivity, and provide a kind of new method for other far infrared deterctors.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Present embodiment may further comprise the steps:
(1) determine that the type photodetector that will grow is a photoemissive detector in the n p type gallium arensidep homojunction, the emission layer of the doping that it was replaced by the multicycle and the assertive evidence layer of non-doping are formed; Top mirror is simply thought the interface that air and detector form; Determine that the bottom mirror that will grow is by highly doped GaAs bottom electrode layer, the gallium arsenide layer of non-doping, and Au metal level (refractive index is 152+329i).Present embodiment is the over-all quantum efficiency that improves in the detector cavity.It is absorptivity A, internal quantum η b, the product of this three part of potential barrier collection rate η c.According to Fresnel coefficient matrix and dielectric function model, by the numerical computations rate A that can be absorbed.Internal quantum η b=exp (d/Lz), wherein is Lz inelastically scattered mean free path (Lz=750?), d is the thickness of emission layer.Potential barrier collection rate η c generally is defaulted as 1.
By the quantum efficiency of formula in just can the numerical solution detector cavity,, can optimize the structure of panel detector structure and bottom mirror in order to make the maximization of quantum efficiency.
Optimum panel detector structure needs suitable cycle N, the doping content of emission layer and thickness, and the thickness of intrinsic layer; And the optimization of the structure of bottom mirror generally can be finished by non-doped layer and the metal layer thickness adjusted in the bottom mirror.
(2) growth of consideration material, is the structure from top to bottom that can obtain n p type gallium arensidep homojunction detector according to parameters optimization: 1500? bottom GaAs intrinsic layer, be then emission layer (silicon doping GaAs, the thickness 600 in 20 cycles?, doping content n type 1.2 * 10
17Cm
-3)/intrinsic layer (non-undoped gallium arsenide, thickness 1000?), cover 3000 at last? top electrode layer (silicon doping GaAs, doping content are n type 2 * 10
18Cm
-3).
Is (3) use molecular beam epitaxy device growth resonance enhancing n p type gallium arensidep homojunction panel detector structure to be: substrate semi-insulated gallium arsenide substrate, at the GaAs (20 in 20 cycles again according to optimizing detector bottom mirror parameter? )/Al
0.30Ga
0.70As (20?) super-lattice buffer layer on, the growth 3000? is the GaAs non-doped layer then 5000? bottom electrode layer (silicon doping, doping content are n type 2 * 10
18Cm
-3), growing n-type GaAs homojunction panel detector structure on bottom electrode layer.After growing this optimizing structure, remove substrate, plating one deck 1000 below bottom electrode layer? thick Au metal level has so just obtained the high resonance of a kind of quantum efficiency and has strengthened n p type gallium arensidep homojunction far infrared deterctor.
What present embodiment was realized is a kind of resonant-enhanced far-infrared detector, and its advantage is: what this example used is n p type gallium arensidep homojunction detector, with respect to p p type gallium arensidep homojunction detector and other detectors, and the easier cut-off wavelength that has realized length; Secondly, this example must realize that successfully the quantum efficiency of detector is enhanced significantly, quantum efficiency in the detector cavity can reach 18.8%, be not add three times of bottom mirror detector (4.9%), surpass n type Si or the p type GaAs homojunction far infrared deterctor quantum efficiency reported.
Claims (4)
1. the preparation method of a resonant-enhanced far-infrared detector is characterized in that, may further comprise the steps:
The first step, the definite type photodetector that will grow and the form of speculum: the type of detector is a photoemissive detector in the homojunction, top mirror is the interface that is formed by air and detector, and bottom mirror is the speculum in far infrared band reflectivity height and phase matched;
Described speculum has gallium arsenide layer, the metal level of highly doped bottom electrode layer, non-doping from top to bottom;
Second step, utilize Fresnel coefficient matrix and dielectric function model, obtain quantum efficiency in the cavity by numerical computations, by making the quantum efficiency maximization in the resonant cavity, the detector that is optimized and the structural parameters of bottom mirror and material parameter;
The 3rd step, according to the parameter that is optimized, with the molecular beam epitaxy resonant-enhanced far-infrared detector of growing.
2. the preparation method of resonant-enhanced far-infrared detector according to claim 1, it is characterized in that, detector described in the first step is a photoemissive detector in the n p type gallium arensidep homojunction, the detector that the emission layer of the doping that it was replaced by the multicycle and the intrinsic layer of non-doping are formed.
3. the preparation method of resonant-enhanced far-infrared detector according to claim 1, it is characterized in that, second step specifically was meant: from utilizing basic Fresnel coefficient matrix, situation at multi-layer film structure and light incident, shift out the computing formula of the reflectivity R and the transmissivity T of every bed boundary onto, and according to the dielectric function model, parameter in conjunction with detector, calculate the reflectivity of far infrared band detector surface and the light transmission T on detector cavity and the bottom mirror interface, just can obtain absorptivity in the detector cavity by formula A=1-T-R, try to achieve internal quantum η by formula
bWith potential barrier collection rate η
c, so just obtain the total quantum efficiency η in the detector cavity body
Total=A * η
b* η
c, by making the quantum efficiency maximum in the detector cavity, and take the constraint of feasibility into consideration, optimize panel detector structure and bottom mirror structure.
4. the preparation method of resonant-enhanced far-infrared detector according to claim 1, it is characterized in that, the 3rd step specifically was meant: obtain structural parameters and doping content according to optimization, utilize the molecular beam epitaxial growth device to prepare fir detector structure and bottom mirror structure, so just obtain a quantum efficiency than higher resonant-enhanced far-infrared detector.
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| CN101697365B true CN101697365B (en) | 2011-01-19 |
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| CN102148287A (en) * | 2011-01-11 | 2011-08-10 | 上海交通大学 | Preparation method for resonant cavity of far infrared detector |
| CN107706261B (en) * | 2017-09-04 | 2019-10-08 | 中国空空导弹研究院 | A kind of lamination Dual band IR focus planar detector and preparation method thereof |
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