CN101696992B - Measurement method of base resistance of bipolar transistor - Google Patents
Measurement method of base resistance of bipolar transistor Download PDFInfo
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- CN101696992B CN101696992B CN 200910197814 CN200910197814A CN101696992B CN 101696992 B CN101696992 B CN 101696992B CN 200910197814 CN200910197814 CN 200910197814 CN 200910197814 A CN200910197814 A CN 200910197814A CN 101696992 B CN101696992 B CN 101696992B
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Abstract
The invention provides measurement structure and method of a base resistance of a bipolar transistor. The measurement method comprises the steps of: designing a plurality of bipolar transistor measurement structures with different emitter region widths b; in measurement, zero-offsetting an emitter electrode and a collector electrode of each measurement structure, connecting four metal leading out terminals of a base by using a testing Kelvin resistance mode, applying an excitation current I and measuring a voltage drop Vbb; fitting a curve by using Delta Vbb/I as ordinates and Delat b/L as abscissas according to the formula of Delta Vbb/I=Rsh*Delta b/L+Rlink, wherein L is the effective length of an emitter region, slope of the curve is an intrinsic square resistance Rsh of a base and intercept is a connecting resistance Rlink of the base; zero-offsetting the emitter region and a collector region of each measurement structure, respectively applying voltages of Vbe+Delta V and Vbe-Delta V to the two metal leading out terminals closest to the emitter region, measuring the current I flowing through the base; and fitting a curve according to the formula of 2Delta V/Delta I=Rsh*Delta b/L+Rx, wherein the intercept is a non-intrinsic resistance Rx of the base. The base contact resistance is Rx-Rlink.
Description
Technical field
The present invention relates to a kind of measurement structure and measuring method of measuring resistance, more relate to the base resistor measuring method of a kind of measurement bipolar transistor.
Background technology
Figure 1 shows that the basic structure of the known extrinsic resistance of extraction base intrinsic resistance and base; Comprise launch site E, base B.Resistance between draw to the metal of base B at E edge, launch site is defined as contact resistance.
The resistance of base B comprises intrinsic resistance and extrinsic resistance, and wherein the extrinsic resistance of base B comprises contact resistance (contact resistance) and contact resistance Rlink (link resistance) two parts.Structure shown in Figure 1 can only be extracted base intrinsic resistance Rsh and extrinsic resistance R x, but can accurately not extract contact resistance Rlink.Along with improving constantly of manufacturing process, the characteristic dimension of bipolar transistor constantly reduces, and contact resistance plays more and more important effect, uses known measuring method can't accurately extract contact resistance Rlink and contact resistance Rcx in the extrinsic resistance.
Summary of the invention
The present invention proposes the base resistor measurement structure of a kind of measurement bipolar transistor and measuring method, can address the above problem.
In order to achieve the above object, the present invention proposes a kind of base resistor measurement structure and measuring method of bipolar transistor, and the base of this bipolar transistor has four metals draws, and is symmetrically distributed in the both sides, launch site, it is characterized in that, this measuring method may further comprise the steps:
A. design a plurality of bipolar transistors and measure structure, fix other sizes, only change launch site width b;
B. respectively each is measured the emitter zero offset of structure, collector is zero offset also, the mode that four metals of base are drawn with tested K elvin resistance connects, the base is drawn away from two symmetrical metals of launch site and is added little exciting current I, measures the pressure drop Vbb between two metals of close launch site are drawn;
C. simulate corresponding curve according to formula Δ Vbb/I=Rsh* Δ b/L+Rlink, this curve horizontal ordinate is Δ b/L, ordinate is Δ Vbb/I, wherein Δ Vbb is, to two transistors with different launch sites width, draw away from two metals of launch site in the base and to add exciting current I, the pressure drop that between drawing near two metals of launch site, records poor, Δ b is the poor of launch site width b, L is the effective length of launch site, this slope of a curve is the intrinsic square resistance Rsh of base, and the intercept of this curve is the contact resistance Rlink of base;
D. respectively among the step a each measured the launch site zero offset of structure, the collector zero offset is drawn respectively making alive Vbe+ Δ V, Vbe-Δ V at two metals of close launch site, and Vce=0 measures the electric current I of the base of flowing through;
E. simulate corresponding curve according to formula 2 Δ V/ Δ I=Rsh* Δ b/L+Rx, the intercept of curve is the extrinsic resistance R x of base.
F. according to formula Rx=Rlink+Rcx, obtain the contact resistance Rcx of base.
Further, by added voltage Vbe on the change base, and repeating step a～f, can obtain the change of voltage Vbe to the impact of the intrinsic square resistance Rsh of base.
The present invention also proposes a kind of base resistor measuring method of bipolar transistor, and the base of this bipolar transistor has four metals draws, and is symmetrically distributed in the both sides, launch site, it is characterized in that, this measuring method may further comprise the steps:
A. fix other sizes, only change the effective length L of launch site, design a plurality of bipolar transistors and measure structure;
B. respectively each is measured the emitter zero offset of structure, collector is also partially zero.
The mode that four metals of base are drawn with tested K elvin resistance connects, and the base is drawn away from two symmetrical metals of launch site and added little exciting current I, measures the pressure drop Vbb between two metals of close launch site are drawn;
C. simulate corresponding curve according to formula Δ Vbb/I=Rsh*b/ Δ L+Rlink, this curve horizontal ordinate is b/ Δ L, ordinate is Δ Vbb/I, wherein Δ Vbb is, to two transistors with different launch sites length, draw away from two metals of launch site in the base and to add exciting current I, measure the poor of voltage drop between drawing near two metals of launch site, b is the width of launch site, Δ L is effective length poor of two transistorized launch sites, this slope of a curve is the intrinsic square resistance Rsh of base, and the intercept of this curve is the contact resistance Rlink of base;
D. respectively among the step a each measured the launch site zero offset of structure, collecting zone is zero offset also, draws B2 and B4 respectively making alive Vbe+ Δ V, Vbe-Δ V at two metals of close launch site, measures the electric current I of the base of flowing through;
E. simulate corresponding curve according to formula 2 Δ V/ Δ I=Rsh*b/ Δ L+Rx, the intercept of curve is the extrinsic resistance R x of base.
F. according to formula Rx=Rlink+Rcx, obtain the contact resistance Rcx of base.
Further, by added voltage Vbe on the change base, and repeating step a～f, can obtain the change of voltage Vbe to the impact of the intrinsic square resistance Rsh of base.
The present invention exactly measurements and calculations goes out contact resistance Rlink and the contact resistance Rcx of bipolar transistor base; In addition, the present invention places bipolar transistor under the duty, and resulting resistance is the numerical value under the bipolar transistor duty, has reached the effect of the resistance of the bipolar transistor base of monitoring duty.
Description of drawings
Figure 1 shows that the basic structure of known extraction intrinsic base region resistance and extrinsic base region resistance;
Figure 2 shows that the base resistance measurement structure base of bipolar transistor in the preferred embodiment of the present invention and the vertical view of launch site;
Figure 3 shows that the sectional view of the resistance measurement structure in the preferred embodiment of the present invention;
Figure 4 shows that the curve that simulates according to the data that step a～the c measurements and calculations obtain;
Figure 5 shows that the curve that simulates according to the data that steps d～the e measurements and calculations obtain.
Embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and cooperate appended graphic being described as follows.
Fig. 2 is the vertical view that the base resistance of bipolar transistor in the preferred embodiment of the present invention is measured structure base and launch site; Figure 3 shows that the sectional view of the resistance measurement structure in the preferred embodiment of the present invention.
Please in conjunction with referring to figs. 2 and 3, measurement structure described here is bipolar transistor, comprises launch site E, base B and collecting zone C, four metals are drawn B1～B4 and are drawn on base B, are symmetrically distributed in the both sides of launch site E.
The width of launch site E is b, and effective length L is shown in Figure 2.E edge, launch site and the distance of drawing apart from the metal of its nearest base B between the edge of B2 and B4 are c.E edge, launch site and draw apart from the metal of its nearest base B and form contact resistance Rlink between the edge of B2 and B4.
In the measuring method that the present embodiment discloses, need a plurality of bipolar transistors with width of different launch site E of design, measure respectively.
At first, measure contact resistance.
Step a:
Design the different bipolar transistor of width b of a plurality of only launch site E and measure structure.Wherein owing to the change of launch site E width b, the width of base B also changes thereupon.E edge, launch site and the distance c of drawing apart from the metal of its nearest base B between the edge of B2 and B4 remain unchanged, and purpose is to keep the contact resistance Rlink of base B constant.
For example, the width of the launch site E of two bipolar transistors is respectively b1, b2, and the effective length of launch site E is L (only having this part launch site to play the effect of conduction).
Step b:
Each is measured structure launch site zero offset, the upper making alive Vbe positive bias of base B, and the bias voltage on the collector C keeps Vce=0, and the mode that four metals of base B are drawn with tested K elvin resistance connects.In four metals of base B were drawn, two symmetrical metals from the launch site away from draw B1 and B3 adds a little exciting current, measure base B from the launch site two other nearest symmetrical metal draw pressure drop Vbb between B2 and the B4.(forced current) is not too big for exciting current, and when guaranteeing emitter junction positively biased, the electric current of the emitter junction of flowing through is compared with exciting current and can be ignored.
Excitation electric flow valuve on the base B is I, and pressure drop Vbb1, Vbb2 on the different bipolar transistors base B can be measured to.
Step c:
Can think and cause the pressure drop Vbb1 reason different with Vbb2 on the base B to be the change of the launch site width b of bipolar transistor.Launch site width and base width change simultaneously, and E edge, launch site and the distance c of drawing apart from the metal of its nearest base B between the edge of B2 and B4 are constant, so the contact resistance of base is constant.Simultaneously, owing to adopting Kelvin mode measuring resistance, eliminate the impact that contact resistance is introduced, can simulate with formula (1) resistance of base B:
ΔR＝ΔVbb/I＝Rsh*Δb/L+Rlink (1)
Wherein, Rlink is the contact resistance of base B, and Rsh is the intrinsic square resistance of base B.
By formula (1), can simulate the curve shown in Fig. 4 solid line, in the coordinate diagram of Fig. 4, horizontal ordinate is Δ b/L, ordinate is the poor of the transistorized base resistance with different launch sites width that calculates, then the intrinsic square resistance Rsh of base B is this slope of a curve, and contact resistance Rlink then is the intercept of this curve.
Change the emitter junction voltage Vbe of base B, also can obtain the bias voltage Vbe curve relevant with the intrinsic square resistance of collecting zone C of base B.As can be seen from Figure 4, under different input voltage Vbe, slope of a curve is different, that is to say, when bipolar transistor during in different duties, the intrinsic square resistance Rsh of its base B is different in fact.
By the end of present step, this measuring method has been measured square resistance Rsh and the contact resistance Rlink of base B.
Next, measure contact resistance Rcx.
Steps d: each measurement structure two metals nearest from the launch site are drawn on B2 and the B4 in step a respectively, add respectively the bias voltage of Vbe+ Δ V, Vbe-Δ V, and launch site E zero is inclined to one side, and collecting zone C zero partially.Vbe is not too big, and the electric current of the emitter junction of guaranteeing to flow through is compared and can be ignored with the electric current that two metals of the base of flowing through are drawn between B2 and the B4.The flow through electric current I of base B of measurement.
For example, the width of the launch site E of two bipolar transistors is respectively b1 and b2, and length is L, and two metals of base draw B2 and the upper voltage difference of B4 is 2 Δ V, and electric current I 1, I2 that different bipolar transistors base B flows through can be measured to.
Step e:
Can think that the different reason of electric current I 1, I2 that causes base B to flow through is the change of width of the caused base B of variation of width b of the launch site of bipolar transistor.Therefore the resistance of base can be described by formula (2):
ΔR＝2ΔV/|I1-I2|＝Rsh*|b2-b1|/L+Rx＝Rsh*Δb/L+Rx (2)
Wherein, Rx is the extrinsic resistance of base B, and Rsh is the intrinsic square resistance of base B.
By formula (2) and the numerical value that measures, can simulate the curve that illustrates such as Fig. 4 dotted line, in the coordinate diagram of Fig. 4, horizontal ordinate is Δ b/L, ordinate is the poor of the transistorized base resistance with different launch sites width that calculates, then the intrinsic square resistance Rsh of base B is this slope of a curve, but not intrinsic resistance Rx then is the intercept of this curve.
Because extrinsic resistance R x=Rlink+Rcx, wherein Rcx is contact resistance, so use measurement structure and measuring method that the present embodiment discloses, can extract intrinsic square resistance Rsh, contact resistance Rlink and contact resistance Rcx.
In another embodiment of the present invention, also can be by utilizing a plurality of measurement structures with same transmit sector width b and different launch site effective length L, launch site effective length L changes, and the base size is corresponding change also, thereby base resistance also changes.Extract intrinsic square resistance Rsh by said method, contact resistance Rlink and contact resistance Rcx.Except measuring the size difference of structure, the pressuring method among another embodiment and the data type of measurement are all identical with preferred embodiment of the present invention.
Correspondingly, in another embodiment of the present invention according to formula
ΔR＝(Vbb2-Vbb1)/I＝ΔVbb/I＝Rsh*b/ΔL+Rlink (3)
Simulate the curve shown in Fig. 5 solid line, wherein horizontal ordinate is b/ Δ L, and ordinate is the poor of the transistorized base resistance with different launch sites length that calculates.Obtain intrinsic square resistance Rsh (slope of a curve) and contact resistance Rlink (intercept of curve) according to this curve.
Simultaneously, can be according to formula
ΔR＝2ΔV/(I1-I2)＝2ΔV/ΔI＝Rsh*b/ΔL+Rx (4)
Simulate the curve that illustrates such as dotted line among Fig. 5, obtain extrinsic square resistance Rx (intercept of curve) according to this curve.
And according to extrinsic resistance R x=Rlink+Rcx, calculate contact resistance Rcx.
Although the present invention discloses as above with preferred embodiment, so it is not to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (4)
1. the base resistor measuring method of a bipolar transistor, the base of this bipolar transistor has four metals draws, and is symmetrically distributed in the both sides, launch site, it is characterized in that, and this measuring method may further comprise the steps:
A. design a plurality of bipolar transistors and measure structures, keep edge, launch site and distance between the edge of drawing apart from the metal of its nearest base to remain unchanged, the effective length of maintenance launch site is constant, only changes launch site width b;
B. respectively each is measured the emitter zero offset of structure, collector is zero offset also, the mode that four metals of base are drawn with tested K elvin resistance connects, the base is drawn away from two symmetrical metals of launch site and is added little exciting current I, measures the pressure drop Vbb between two metals of close launch site are drawn;
C. simulate corresponding curve according to formula Δ Vbb/I=Rsh * Δ b/L+Rlink, this curve horizontal ordinate is Δ b/L, ordinate is Δ Vbb/I, wherein Δ Vbb is, to two transistors with different launch sites width, draw away from two metals of launch site in the base and to add simultaneously exciting current I, the pressure drop that between drawing near two metals of launch site, records poor, Δ b is the poor of different launch site width b, L is the effective length of launch site, this slope of a curve is the intrinsic square resistance Rsh of base, and the intercept of this curve is the contact resistance Rlink of base;
D. respectively among the step a each measured emitter, the collector zero offset of structure, draw respectively making alive Vbe+ Δ V, Vbe-Δ V at two metals of close launch site, Vce=0, the flow through difference between current Δ I of bipolar transistor base with different launch sites width of measurement, wherein Vce is the bias voltage on the collector;
E. simulate corresponding curve according to formula 2 Δ V/ Δ I=Rsh * Δ b/L+Rx, the intercept of curve is the extrinsic resistance R x of base;
F. according to formula Rx=Rlink+Rcx, obtain the contact resistance Rcx of base.
2. measuring method according to claim 1 is characterized in that, by added voltage Vbe on the change base, and repeating step a～f, obtain the change of voltage Vbe to the impact of the intrinsic square resistance Rsh of base.
3. the base resistor measuring method of a bipolar transistor, the base of this bipolar transistor has four metals draws, and is symmetrically distributed in the both sides, launch site, it is characterized in that, and this measuring method may further comprise the steps:
A. the distance between the edge that keeps the edge, launch site and draw apart from the metal of its nearest base remains unchanged, and keeps the launch site width constant, only changes the effective length L of launch site, designs a plurality of bipolar transistors and measures structures;
B. respectively with each emitter zero offset of measuring structure, collector is zero offset also,
The mode that four metals of base are drawn with tested K elvin resistance connects, and the base is drawn away from two symmetrical metals of launch site and added little exciting current I, measures the pressure drop Vbb between two metals of close launch site are drawn;
C. simulate corresponding curve according to formula Δ Vbb/I=Rsh * b/ Δ L+Rlink, this curve horizontal ordinate is b/ Δ L, ordinate is Δ Vbb/I, wherein Δ Vbb is, to two transistors with different launch sites effective length, draw away from two metals of launch site in the base and to add simultaneously exciting current I, the pressure drop that between drawing near two metals of launch site, records poor, b is the width of launch site, Δ L is transistorized launch site effective length poor of two effective lengths with different launch sites, this slope of a curve is the intrinsic square resistance Rsh of base, and the intercept of this curve is the contact resistance Rlink of base;
D. respectively among the step a each measured the emitter zero offset of structure, collector is zero offset also, draw respectively making alive Vbe+ Δ V, Vbe-Δ V, the difference between current Δ I of the bipolar transistor base that measuring flows through has different launch sites effective length at two metals of the base of close launch site;
E. simulate corresponding curve according to formula 2 Δ V/ Δ I=Rsh * b/ Δ L+Rx, the intercept of curve is the extrinsic resistance R x of base;
F. according to formula Rx=Rlink+Rcx, obtain the contact resistance Rcx of base.
4. measuring method according to claim 3 is characterized in that, by added voltage Vbe on the change base, and repeating step a～f, obtain the change of voltage Vbe to the impact of the intrinsic square resistance Rsh of base.
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| US10627442B2 (en) * | 2017-12-07 | 2020-04-21 | Nanya Technology Corporation | Method for estimating resistances of a source contact and a drain contact of a MOS transistor |
| CN113253089B (en) * | 2021-07-15 | 2021-09-14 | 广东省大湾区集成电路与系统应用研究院 | Fin type field effect transistor source-drain parasitic resistance extraction method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809757A (en) * | 2003-06-09 | 2006-07-26 | 东京毅力科创株式会社 | Inspection method and inspection apparatus for inspecting electrical characteristics of inspection object |
| CN101459046A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Test construction for light doped drain doping region square resistor and manufacturing method thereof |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809757A (en) * | 2003-06-09 | 2006-07-26 | 东京毅力科创株式会社 | Inspection method and inspection apparatus for inspecting electrical characteristics of inspection object |
| CN101459046A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Test construction for light doped drain doping region square resistor and manufacturing method thereof |
Non-Patent Citations (5)
| Title |
|---|
| JP特开平9-237794A 1997.09.09 |
| 冒慧敏.双极型器件基区电阻的测量.《半导体技术》.1998,第23卷(第3期),29-31. |
| 刘新福等.用改进的Rymaszewski公式及方形四探针法测定微区的方块电阻.《物理学报》.2004,第53卷(第8期),2461-2466. |
| 双极型器件基区电阻的测量;冒慧敏;《半导体技术》;19980630;第23卷(第3期);29-31 * |
| 用改进的Rymaszewski公式及方形四探针法测定微区的方块电阻;刘新福等;《物理学报》;20040831;第53卷(第8期);2461-2466 * |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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