CN101676804B - 光刻设备和运行该设备的方法 - Google Patents

光刻设备和运行该设备的方法 Download PDF

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Publication number
CN101676804B
CN101676804B CN2009101735038A CN200910173503A CN101676804B CN 101676804 B CN101676804 B CN 101676804B CN 2009101735038 A CN2009101735038 A CN 2009101735038A CN 200910173503 A CN200910173503 A CN 200910173503A CN 101676804 B CN101676804 B CN 101676804B
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China
Prior art keywords
liquid
projection system
confinement structure
gas
immersion
Prior art date
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CN2009101735038A
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English (en)
Chinese (zh)
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CN101676804A (zh
Inventor
J·P·J·布鲁依杰斯腾斯
R·J·布鲁尔斯
H·詹森
S·兰德柯尔
A·J·梅斯特
B·詹森
I·A·J·托马斯
M·A·C·米兰达
G·特纳萨
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of CN101676804A publication Critical patent/CN101676804A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2009101735038A 2008-09-17 2009-09-15 光刻设备和运行该设备的方法 Active CN101676804B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9774308P 2008-09-17 2008-09-17
US61/097,743 2008-09-17
US15010609P 2009-02-05 2009-02-05
US61/150,106 2009-02-05

Publications (2)

Publication Number Publication Date
CN101676804A CN101676804A (zh) 2010-03-24
CN101676804B true CN101676804B (zh) 2012-02-01

Family

ID=42029409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101735038A Active CN101676804B (zh) 2008-09-17 2009-09-15 光刻设备和运行该设备的方法

Country Status (4)

Country Link
JP (2) JP4972677B2 (enExample)
KR (1) KR101196358B1 (enExample)
CN (1) CN101676804B (enExample)
TW (1) TWI457714B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647813B2 (ja) 1988-06-09 1994-06-22 動力炉・核燃料開発事業団 低水圧制御水理試験法
TWI457714B (zh) * 2008-09-17 2014-10-21 Ａｓｍｌ荷蘭公司 微影裝置及其操作方法
KR20170026563A (ko) * 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법
NL2017128A (en) * 2015-07-16 2017-01-23 Asml Netherlands Bv A lithographic apparatus, a projection system, a last lens element, a liquid control member and a device manufacturing method
CN110687752A (zh) * 2018-07-05 2020-01-14 上海微电子装备（集团）股份有限公司 湿空气制备装置、湿空气制备方法以及光刻装置
CN112684668B (zh) * 2020-12-25 2024-07-23 浙江启尔机电技术有限公司 一种浸液供给回收装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612051A (zh) * 2003-10-28 2005-05-04 Asml荷兰有限公司 光刻装置和器件制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197917A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
JP2004095654A (ja) * 2002-08-29 2004-03-25 Nikon Corp 露光装置及びデバイス製造方法
KR100585476B1 (ko) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR101369016B1 (ko) * 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4479269B2 (ja) * 2004-02-20 2010-06-09 株式会社ニコン 露光装置及びデバイス製造方法
JP2006128192A (ja) * 2004-10-26 2006-05-18 Nikon Corp 保持装置、鏡筒、及び露光装置、並びにデバイス製造方法
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080085874A (ko) 2006-01-18 2008-09-24 캐논 가부시끼가이샤 노광장치
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
NL1035908A1 (nl) * 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2003392A (en) * 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
TWI457714B (zh) * 2008-09-17 2014-10-21 Ａｓｍｌ荷蘭公司 微影裝置及其操作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612051A (zh) * 2003-10-28 2005-05-04 Asml荷兰有限公司 光刻装置和器件制造方法

Also Published As

Publication number Publication date
CN101676804A (zh) 2010-03-24
JP4972677B2 (ja) 2012-07-11
KR101196358B1 (ko) 2012-11-01
TWI457714B (zh) 2014-10-21
TW201015237A (en) 2010-04-16
JP2010074159A (ja) 2010-04-02
KR20100032338A (ko) 2010-03-25
JP5433045B2 (ja) 2014-03-05
JP2012138631A (ja) 2012-07-19

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