CN101673057A - Submicron periodic structure preparation system based on digital microscope device - Google Patents
Submicron periodic structure preparation system based on digital microscope device Download PDFInfo
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- CN101673057A CN101673057A CN200910192908A CN200910192908A CN101673057A CN 101673057 A CN101673057 A CN 101673057A CN 200910192908 A CN200910192908 A CN 200910192908A CN 200910192908 A CN200910192908 A CN 200910192908A CN 101673057 A CN101673057 A CN 101673057A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000000737 periodic effect Effects 0.000 title claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000004581 coalescence Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 9
- 230000001427 coherent effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 238000001093 holography Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- 238000004088 simulation Methods 0.000 description 1
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Abstract
The invention discloses a submicron periodic structure preparation system based on digital microscope device, and is characterized in that the system comprises an optical system used for forming parallel lights, a digital microscope device used for receiving a plurality of parallel lights and generating a plurality of diffracted lights, an imaging system used for gathering the diffracted lights and carrying out a coherent addition to the diffracted lights, and a computer control system used for controlling the digital microscope device. The diffracted lights converted from parallel lights through the digital microscope device are gathered and coherently added for forming a final photoetching pattern. The system greatly enhances photoetching precision to achieve the internationally most advanced level; moreover, a bi-dimensional structure with a period under micron is prepared for the first time.
Description
Technical field
The present invention relates to a kind of based on the Digital Micromirror Device submicron periodic structure preparation system.
Background technology
The micro-nano photonic device by on wavelength and sub-wavelength yardstick to the controlling of light, realize various smooth manipulation function.Micro-nano photonic device preparation method mainly contains chemical self-organizing growth method, the little processing method of pointwise, optical holography preparation method and the rapid combined method of multistep.Wherein the optical holography preparation method adopts the method for multiple-beam interference usually, form the light distribution that space periodic is arranged, remake and be used for photosensitive material, be etched in spatial light intensity on the material respectively, it has zero defect, large volume, cost is low, efficient is high, the advantage of quality better, has the potentiality of the large-scale production of being applied to.Be referred from photoetching technique development experience for many years, the influence of special microminaturization technological revolution RET (Resolution Enhancement Technology), the optical holography preparation method is equally in LASER Light Source, constantly make progress on photoresist and the optical devices, the periodic characteristic yardstick also is contracted to ten nanometers level.But what the optical holography preparation method adopted usually is that simple light field is synthetic, also just only can obtain the micro-nano structure in simple periodic arrangement, for the complicated and practical more functional photonic crystal and the preparation of photonic device, needs the combination of more technology.Optical correction, phase shifting mask and off-axis illumination become the three big major techniques of RET, and by their continuous innovation, RET makes lithographic dimensioned constantly dwindle and followed by the industry needs, obey and satisfy Moore's Law, in integrated circuit manufacturing industry, brought into play important effect.
The digital maskless optical projection lithography is a kind of emerging maskless photoetching technology, and it produces some special digitizing patterns by computer real-time, and is carried in spatial light modulator, makes the pattern of optical projection to modulate arbitrarily.Common spatial light modulator have liquid crystal display device LCD, plasma display device and digital micro-mirror device (DigitalMicromirror Device, DMD) etc.And DMD is the pure digi-tal spatial light modulator of at present unique a kind of production in enormous quantities.Therefore the digit optical research of not having a mask photoetching technique all is based on the DMD spatial light modulator basically.Domestic DMD research is mainly used in large-sized gray scale photoetching, and also be in the starting stage in the photoetching technique research of industry micro-meter scale, relevant research report or paper are also seldom, and generally be in theoretical research or numerical simulation stage, its characteristic dimension of made structure plan is bigger, can't really satisfy the requirement of Micro-Opto-Electro-Mechanical Systems.
Summary of the invention
At the shortcoming of prior art, the purpose of this invention is to provide a kind of lithographic accuracy higher based on Digital Micromirror Device sub-micron preparation system.
For achieving the above object, technical scheme of the present invention is: a kind of based on Digital Micromirror Device sub-micron preparation system, comprise optical system, reception multi beam directional light that is used to form directional light and the Digital Micromirror Device that produces the multi beam diffraction light, the multi beam diffraction light is understood the computer control system that coalescence makes the imaging system of its generation coherence stack and is used for the control figure micro mirror element, directional light is assembled the dried stack of concurrent looks through the diffraction light of respectively restrainting after the Digital Micromirror Device, and forms final photoengraving pattern.
This imaging system comprises convex lens and aspheric mirror, and the multi beam diffraction light forms dot matrix through convex lens focus on back focal plane, through aspheric mirror complex imaging on the picture plane, forms final photoengraving pattern again.
The focal length of convex lens is big than the focal length of aspheric mirror, and the aspheric mirror numerical aperture is bigger than convex lens numerical aperture.
These convex lens are low-pass filter.
The default figure of this computer control system is input to the static RAM of being located on the Digital Micromirror Device through the I/O interface with the binary digit form, is used to control the upset of being located at eyeglass on the Digital Micromirror Device, realizes predetermined diffraction light output.
This optical system comprises object lens, aperture and achromat, and semiconductor laser becomes above-mentioned directional light through behind object lens, aperture and the achromat successively.
Compared with prior art, the present invention has following advantage:
The present invention uses Digital Micromirror Device to make the maskless lithography preparation method, minimum precision than prior art for preparing technology is greatly improved, can improve the efficiency of light energy utilization, resolution, response speed and operating temperature range by Digital Micromirror Device, and improved the precision of photoetching greatly by imaging system, reach international most advanced level, and the cycle of having produced first is the following two-dimensional structure of micron.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail.
As shown in Figure 1, a kind of based on Digital Micromirror Device sub-micron preparation system, the computer control system that comprises the optical system that is used to form single bundle directional light, receives single bundle directional light and produce the Digital Micromirror Device DMD of multi beam diffraction light, can coalescence make it imaging system of coherence stack take place and be used for the control figure micro mirror element multi beam diffraction light, directional light is assembled the dried stack of concurrent looks through the diffraction light of respectively restrainting after the Digital Micromirror Device, and forms final photoengraving pattern.
This imaging system comprises convex lens L1 and aspheric mirror L2, and the multi beam diffraction light focuses on through convex lens L1 and forms dot matrix on the back focal plane, through aspheric mirror L2 complex imaging on the picture plane, forms final photoengraving pattern again.
Imaging system is a 4f system, and DMD goes up the diffraction light pattern-information that forms and is set to two-dimensional grating.After directional light is radiated at DMD, be decomposed into the multi beam diffraction light of propagating to different directions through diffraction, the corresponding certain spatial frequency of each bundle diffraction light focuses on respectively through convex lens L1 and forms dot matrix on the back focal plane, and this dot matrix is exactly the Fraunhofer diffraction pattern of grating.The diffracted beam of different space frequency is again through aspheric mirror L2 complex imaging on the picture plane again then, form final pattern and act on photoresist on the aspheric mirror L2 back focal plane, that is the pattern-information on the DMD is through dwindling the back in the reimaging of photoresist place.In the present embodiment, convex lens L1 uses big focal length, wide-aperture lens, collects the order of diffraction as much as possible.Theoretical and experiment all shows, collects the order of diffraction as much as possible and can improve the imaging acutance, the very few order of diffraction even can not imaging.Aspheric mirror L2 is little focal length, wide-aperture aspheric mirror.Wherein, the focal length of convex lens is big than the focal length of aspheric mirror, and numeric ratio convex lens aperture, aspheric mirror aperture numerical value is big, and this structure can effectively be eliminated spherical aberration, can increase substantially image quality.
These convex lens are low-pass filter.
The default figure of this computer control system is input to the static RAM of being located on the Digital Micromirror Device through the I/O interface with the binary digit form, is used to control the upset of being located at eyeglass on the Digital Micromirror Device, realizes predetermined diffraction light output.
This optical system comprises object lens, aperture and achromat, and wavelength is that the semiconductor laser of 532 nanometers becomes above-mentioned directional light through behind object lens, little pin hole and the achromat successively.
In the present invention, DMD is equivalent to the mask in the conventional lithography.DMD is made up of thousands of small, tiltable aluminium alloy eyeglasses, can determine each eyeglass is tilted on certain direction to how long by pulse-length modulation.Eyeglass can be in one second switch 256 times, promptly can realize 256 grades gray-scale pixels at most, this speed allows digital gray scale and color reproduction, realizes gray scale photoetching and holographic the demonstration.Compare advantage such as Digital Micromirror Device has the higher efficiency of light energy utilization, resolution height, response speed is fast, operating temperature range is big with the digitizing spatial light modulator of routine.
Claims (6)
1, a kind of based on the Digital Micromirror Device submicron periodic structure preparation system, it is characterized in that, the computer control system that comprises the optical system that is used to form directional light, receives directional light and produce the Digital Micromirror Device of multi beam diffraction light, can coalescence make it imaging system of coherence stack take place and be used for the control figure micro mirror element multi beam diffraction light, directional light is assembled the dried stack of concurrent looks through the diffraction light of respectively restrainting after the Digital Micromirror Device, and forms final photoengraving pattern.
2, according to claim 1 based on the Digital Micromirror Device submicron periodic structure preparation system, it is characterized in that, this imaging system comprises convex lens (L1) and aspheric mirror (L2), the multi beam diffraction light focuses on through convex lens (L1) and forms dot matrix on the back focal plane, pass through aspheric mirror (L2) complex imaging on the picture plane again, form final photoengraving pattern.
3, according to claim 2ly it is characterized in that based on the Digital Micromirror Device submicron periodic structure preparation system focal length of convex lens (L1) is big than the focal length of aspheric mirror (L2), aspheric mirror (L2) numerical aperture is bigger than convex lens (L1) numerical aperture.
4, according to claim 2ly it is characterized in that based on the Digital Micromirror Device submicron periodic structure preparation system these convex lens (L1) are low-pass filter.
5, according to claim 1 based on the Digital Micromirror Device submicron periodic structure preparation system, it is characterized in that, the default figure of this computer control system is input to the static RAM of being located on the Digital Micromirror Device through the I/O interface with the binary digit form, be used to control the upset of being located at eyeglass on the Digital Micromirror Device, realize predetermined diffraction light output.
6, according to claim 1 based on the Digital Micromirror Device submicron periodic structure preparation system, it is characterized in that, this optical system comprises object lens, little pin hole and achromat, and semiconductor laser becomes above-mentioned directional light through behind object lens, little pin hole and the achromat successively.
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| CN200910192908A CN101673057A (en) | 2009-09-30 | 2009-09-30 | Submicron periodic structure preparation system based on digital microscope device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268018A (en) * | 2013-06-13 | 2013-08-28 | 苏州大学 | Beam splitting device and multi-beam interference light path system |
| CN104698768A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN106909029A (en) * | 2017-03-07 | 2017-06-30 | 无锡影速半导体科技有限公司 | Laser direct imaging exposure machine movement focusing structure and focus method |
| CN110653485A (en) * | 2019-10-16 | 2020-01-07 | 东南大学 | Cross-scale three-dimensional laser direct-writing processing device |
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
-
2009
- 2009-09-30 CN CN200910192908A patent/CN101673057A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268018A (en) * | 2013-06-13 | 2013-08-28 | 苏州大学 | Beam splitting device and multi-beam interference light path system |
| CN104698768A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN104698768B (en) * | 2013-12-10 | 2017-02-01 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN106909029A (en) * | 2017-03-07 | 2017-06-30 | 无锡影速半导体科技有限公司 | Laser direct imaging exposure machine movement focusing structure and focus method |
| CN110653485A (en) * | 2019-10-16 | 2020-01-07 | 东南大学 | Cross-scale three-dimensional laser direct-writing processing device |
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN110703577B (en) * | 2019-11-21 | 2022-03-04 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
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Open date: 20100317 |