CN101662002B - Dual electro-deposition processing method of invar metal plate for cathode material transferring mask - Google Patents
Dual electro-deposition processing method of invar metal plate for cathode material transferring mask Download PDFInfo
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- CN101662002B CN101662002B CN2009100346653A CN200910034665A CN101662002B CN 101662002 B CN101662002 B CN 101662002B CN 2009100346653 A CN2009100346653 A CN 2009100346653A CN 200910034665 A CN200910034665 A CN 200910034665A CN 101662002 B CN101662002 B CN 101662002B
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- 238000004070 electrodeposition Methods 0.000 title claims abstract description 27
- 238000003672 processing method Methods 0.000 title claims abstract description 23
- 229910001374 Invar Inorganic materials 0.000 title claims abstract description 22
- 239000010406 cathode material Substances 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 title abstract description 9
- 229910052751 metal Inorganic materials 0.000 title abstract description 9
- 230000009977 dual effect Effects 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000005323 electroforming Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000007731 hot pressing Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000007639 printing Methods 0.000 claims abstract description 4
- 238000005070 sampling Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 238000001883 metal evaporation Methods 0.000 claims description 11
- 239000010963 304 stainless steel Substances 0.000 claims description 8
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 5
- 230000000007 visual effect Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000001704 evaporation Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 6
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a dual electro-deposition processing method of an invar metal plate for a cathode material transferring mask. The method comprises the following steps: firstly, designing a drawing file of a metal evaporating mask by adopting a photoelectric processing technology and a dual electro-deposition technology; placing a stainless steel substrate in an oven for baking; hot-pressing or printing a photo-resistant material on the substrate; making a negative photomask film, and exposing the negative photomask film in high precision; cleaning the exposed substrate in a developer, and putting the cleaned substrate in a nickel and gold electroforming tank for dual electro-deposition processing; after electro-deposition, taking the metal evaporating mask on the substrate off, and then putting the metal evaporating mask in an ultrasonic cleaner for cleaning; and finally carrying out sampling detection. The invention ensures that the metal evaporating mask reaches the hole-width requirement of 10 to 15 mum, the opening error is+/-1.5 mum, the evenness of thickness precision is+/-1 mum, the position precision is not greater than+/-5 microns, the expansion coefficient is less than 1.8*10<-6>DEG C, and the metal evaporating mask has the advantages of small hole diameter, high precision and high temperature resistance and meets the manufacturing requirements of picture element precise transferring evaporation of high-definition OLED panels.
Description
Technical field
The present invention relates to a kind of processing method of dilval sheet metal, specifically relate to the binary electro-deposition processing method of a kind of luminescent panel cathode material transferring mask, belong to the accurate manufacturing technology of superelevation field with the invar metallic plate.
Background technology
Characteristics such as organic light emission OLED (Organic Light Emitting Display, Chinese name OLED) panel technology is frivolous because of possessing, power saving have incomparable advantage with respect to LCD, so it are had an optimistic view of by the insider always also.The OLED Display Technique is different with traditional LCD display mode, need not backlight, adopts extremely thin coating of organic material and glass substrate, and when electric current passed through, these organic materials will be luminous.And the OLED display screen can do lighter and thinnerly, and visible angle is bigger, and can significantly save electric energy.
The oled panel Display Technique still receives the very puzzlement of technical barrier such as difficulty of the low and screen large scaleization of display resolution at present; The transfer evaporation coating technique of oled panel picture element and cathode material is the key technology of puzzlement OLED picture element high-definition; But the high-tech dilval galvanoplastics that is used to shift vapor deposition is monopolized by high-end producers of only a few such as America and Europe, Japan always; Domestic enterprise and research and development institution do not have maturation in the technology aspect the research and development transfer vapor deposition cover; Can not really be used for the transfer vapor deposition of high definition oled panel picture element, also limit the oled panel The Application of Technology.
Summary of the invention
For solving the deficiency that existing OLED picture element shifts evaporation coating technique; The object of the present invention is to provide the binary electro-deposition processing method of a kind of cathode material transferring mask, satisfy the high definition oled panel and make the manufacturing requirement of superhigh precision being shifted the vapor deposition panel with the invar metallic plate.
For addressing the above problem, the present invention realizes through following technical scheme:
A kind of cathode material transferring mask is characterized in that adopting photoelectricity processing and binary electro-deposition technology with the binary electro-deposition processing method of invar metallic plate, specifically may further comprise the steps:
(1), the graphic file of design metal evaporation face shield, the data of specified data compensation;
(2), adopt 304 stainless steel substrates, after surface grinding processing, visual examination meet the requirements, place baking oven to toast substrate;
(3), with photoresist hot pressing or be printed on the substrate;
(4), according to the graphic file of the metal evaporation face shield that designs, make the negative film light shield film of 20000DPI, on parallel ray machine, carry out the high accuracy exposure;
(5), the substrate after will making public cleans in 1% developer, figure is rested on the substrate, and does figure size and visual examination;
(6), electroforming solution that substrate is put into the dilval electrotyping bath carries out binary electroforming deposition process, described binary electroforming deposition process is to utilize certain electric current deposit thickness, respectively around photoresist and above deposit twice and form;
(7), after electroforming deposition reaches needed thickness, the metal evaporation face shield on the substrate is taken off, put into supersonic wave cleaning machine and clean;
(8), sampling check, packing.
Aforesaid cathode material transferring mask is characterized in that with the binary electro-deposition processing method of invar metallic plate described photoresist is dry film or photoresist.
Aforesaid cathode material transferring mask is characterized in that described dry film or photoresist with the binary electro-deposition processing method of invar metallic plate, behind the UV UV-irradiation via 300～400nm curing reaction can take place.
Aforesaid cathode material transferring mask is characterized in that with the binary electro-deposition processing method of invar metallic plate in described step (2), described substrate toasted 60～80 minutes in baking oven, baking temperature is 100～120 degree.
Aforesaid cathode material transferring mask is with the binary electro-deposition processing method of invar metallic plate; It is characterized in that in described step (3); With photoresist hot pressing or be printed on the substrate; Be utilize drying film machine at temperature 110～130 degree, pressure under 1.2KG～1.5KG, the condition of speed at 0.8～1.0m/S, the dry film hot pressing of 25 μ m on 304 stainless steel substrates, is guaranteed that outward appearance reaches requirement; Or the employing method of printing, under 100～200 order silk screen printings, photoresist on average is coated on 304 stainless steel substrates certain thickness photoresist, thickness is 20～25 μ m.
Aforesaid cathode material transferring mask is characterized in that the high accuracy exposure in the described step (4) with the binary electro-deposition processing method of invar metallic plate, and the UV light energy is controlled at 3～5KW during exposure.
Aforesaid cathode material transferring mask is characterized in that with the binary electro-deposition processing method of invar metallic plate described electroforming solution is the dilval electroforming solution.
Aforesaid cathode material transferring mask is characterized in that with the binary electro-deposition processing method of invar metallic plate the main component of described dilval electroforming solution and content are following:
Nickel sulfamic acid solution: 240～300g/L;
Sulfamic acid ferrous solution: 10～15g/L;
Nickel chloride solution: 10～30g/L;
Boric acid: 30～40g/L;
Brightener: 1～3ml/L;
Additive: 2～10ml/L;
PH＝3.0～4.0；
Temperature=40～50 ℃;
Current density=0.8～5A/dm
2
Filtering accuracy: 0.2 μ m.
The invention has the beneficial effects as follows: adopt binary electro-deposition processing method of the present invention to make the high accuracy picture element and shift the evaporation metal plate, can make the metal evaporation face shield reach the wide requirement in hole of 10～15 μ m, the perforate precision reaches ± 1.5 μ m; The thickness and precision uniformity reaches ± 1 μ m; Positional precision is≤(370mm * 470mm), the aperture is little, and precision is high for ± 5 μ m; Very high temperature resistant, the coefficient of expansion is less than 1.8 * 10
-6℃, satisfy the accurate manufacturing requirement of shifting vapor deposition of high definition oled panel picture element, make oled panel resolution can reach 1366 * 768 high picture element performance.
Description of drawings
Fig. 1 is a process chart of the present invention.
Embodiment
Specifically introduce method of the present invention below in conjunction with accompanying drawing.
Cathode material transferring mask among the present invention is with the binary electro-deposition processing method of invar metallic plate; Adopt photoelectricity processing and binary electroforming deposition technique; Photoresist adopts dry film or photoresist, and the electroforming deposition substrate adopts 304 stainless steel substrates, and electroforming solution adopts the dilval electroforming solution.Curing reaction can take place behind the UV UV-irradiation via wavelength 300～400nm in dry film that is adopted or photoresist.
Technical process of the present invention is (like Fig. 1):
The graphic file of design metal evaporation face shield, the data of specified data compensation; Adopt 304 stainless steel substrates, handle, after the inspection outward appearance meets the requirements, place baking oven to toast 60～80 minutes substrate, temperature 100～120 degree through surface grinding; Utilize drying film machine at temperature 110～130 degree, pressure is at 1.2KG～1.5KG, and speed on stainless steel substrate, guarantees that outward appearance reaches requirement with the dry film hot pressing of 25 μ m under the parameter of 0.8～1.0m/S; Or adopt the way of printing, and under 100～200 order silk screen printings, photoresist on average is coated in above the corrosion resistant plate certain thickness photoresist, thickness is got final product about 20～25 μ m.According to the graphic file of the metal evaporation face shield that designs, make the negative film light shield film of 20000DPI, on parallel ray machine, carry out the high accuracy exposure, the UV light energy is controlled at 3～5KW and gets final product.Substrate after the exposure cleans in 1% developer, and figure is rested on the substrate, and does figure size and visual examination.The electroforming solution of then substrate being put into the dilval electrotyping bath carries out binary electroforming deposition process; Can the metal evaporation face shield on the substrate be taken off after reaching needed thickness; Put on the supersonic wave cleaning machine and clean, need check each item size of metal evaporation face shield at last according to sampling frequency.
Binary electro-deposition processing method is to utilize certain electric current deposit thickness, and deposition forms for twice above around photoresist, reaching respectively.
When adopting the dilval electroforming solution, the dilval electroforming solution main component and the content that are adopted are following:
Nickel sulfamic acid solution: 240～300g/L;
Sulfamic acid ferrous solution: 10～15g/L;
Nickel chloride solution: 10～30g/L;
Boric acid: 30～40g/L;
Brightener: 1～3ml/L;
Additive: 2～10ml/L;
PH＝3.0～4.0；
Temperature=40～50 ℃;
Current density=0.8～5A/dm
2
Filtering accuracy: 0.2 μ m.
The dilval material hardness of electroforming deposition reaches 450～550hv, and thickness is 0.020～0.050mm, and aperture widths can reach 10～15 μ m, perforate error ± 1.5 μ m.The aperture is little, and precision is high, and very high temperature resistant, the coefficient of expansion is less than 1.8 * 10
-6℃, satisfy the accurate manufacturing requirement of shifting vapor deposition of high definition oled panel picture element, make oled panel resolution can reach 1366 * 768 high picture element performance.
The present invention is off the beaten track, utilizes the ripe galvanoplastics of our company and the high stable size excellent properties of invar alloy, the creationary invar technology slice technique of developing high size and positional precision, and the precision that successfully is used for high picture element OLED cathode material shifts.
The foregoing description does not limit the present invention in any form, and all taking under the electroformed nickel ferrous solution condition to be equal to the technical scheme that mode was obtained of replacement or equivalent transformation, all dropped in protection scope of the present invention.
Claims (6)
1. a cathode material transferring mask is characterized in that adopting photoelectricity processing and binary electro-deposition technological with the binary electro-deposition processing method of invar metallic plate, specifically may further comprise the steps:
(1), the graphic file of design metal evaporation face shield, the data of specified data compensation;
(2), adopt 304 stainless steel substrates, after surface grinding processing, visual examination meet the requirements, place baking oven to toast substrate;
(3), with photoresist hot pressing or be printed on the substrate;
(4), according to the graphic file of the metal evaporation face shield that designs, make the negative film light shield film of 20000DPI, on parallel ray machine, carry out the exposure that the UV light energy is controlled at 3～5KW;
(5), the substrate after will making public cleans in 1% developer, figure is rested on the substrate, and does figure size and visual examination;
(6), electroforming solution that substrate is put into the dilval electrotyping bath carries out binary electroforming deposition process, described binary electroforming deposition process is to utilize certain electric current deposit thickness, respectively around photoresist and above deposit twice and form;
(7), after electroforming deposition reaches needed thickness, the metal evaporation face shield on the substrate is taken off, put into supersonic wave cleaning machine and clean;
(8), sampling check, packing.
2. cathode material transferring mask according to claim 1 is characterized in that with the binary electro-deposition processing method of invar metallic plate described photoresist is dry film or photoresist.
3. cathode material transferring mask according to claim 2 is characterized in that described dry film or photoresist with the binary electro-deposition processing method of invar metallic plate, behind the UV UV-irradiation via 300～400nm curing reaction can take place.
4. cathode material transferring mask according to claim 1 is characterized in that with the binary electro-deposition processing method of invar metallic plate in described step (2), described substrate toasted 60～80 minutes in baking oven, baking temperature is 100～120 degree.
5. cathode material transferring mask according to claim 1 is with the binary electro-deposition processing method of invar metallic plate; It is characterized in that in described step (3); With photoresist hot pressing or be printed on the substrate; Be utilize drying film machine at temperature 110～130 degree, pressure under 1.2KG～1.5KG, the condition of speed at 0.8～1.0m/S, the dry film hot pressing of 25 μ m on 304 stainless steel substrates, is guaranteed that outward appearance reaches requirement; Or the employing method of printing, under 100～200 order silk screen printings, photoresist on average is coated on 304 stainless steel substrates certain thickness photoresist, thickness is 20～25 μ m.
6. cathode material transferring mask according to claim 1 is characterized in that with the binary electro-deposition processing method of invar metallic plate described electroforming solution is the dilval electroforming solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100346653A CN101662002B (en) | 2009-08-31 | 2009-08-31 | Dual electro-deposition processing method of invar metal plate for cathode material transferring mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100346653A CN101662002B (en) | 2009-08-31 | 2009-08-31 | Dual electro-deposition processing method of invar metal plate for cathode material transferring mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101662002A CN101662002A (en) | 2010-03-03 |
| CN101662002B true CN101662002B (en) | 2012-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100346653A Expired - Fee Related CN101662002B (en) | 2009-08-31 | 2009-08-31 | Dual electro-deposition processing method of invar metal plate for cathode material transferring mask |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107675214A (en) * | 2017-09-14 | 2018-02-09 | 昆山美微电子科技有限公司 | A kind of method that new electromolding alloy technique makes OLED evaporation covers FMM |
| CN113926703A (en) * | 2021-11-17 | 2022-01-14 | 陈波 | Method for manufacturing electroformed screen |
| CN116825752B (en) * | 2023-08-29 | 2024-02-09 | 江西兆驰半导体有限公司 | Wafer and printing method thereof |
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| CN101662002A (en) | 2010-03-03 |
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