CN101661993B - Bimetal electrode structure applied to organic circuit and preparation method thereof - Google Patents
Bimetal electrode structure applied to organic circuit and preparation method thereof Download PDFInfo
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- CN101661993B CN101661993B CN200810119085XA CN200810119085A CN101661993B CN 101661993 B CN101661993 B CN 101661993B CN 200810119085X A CN200810119085X A CN 200810119085XA CN 200810119085 A CN200810119085 A CN 200810119085A CN 101661993 B CN101661993 B CN 101661993B
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Abstract
The invention discloses a bimetal electrode structure applied to an organic circuit, which consists of an organic semiconductor film, a first layer metal film and a second layer metal film deposited on the first metal layer. For the structure of a top-contact type device, the first layer metal film is a high work function metal film, the second layer metal film is a low-price metal film, the first layer metal film directly contacts the organic semiconductor film, and the second layer metal film contacts an interconnecting wire. For the structure of a bottom-contact type device, the first layer metal film is the low-price metal film, the second layer metal film is the high work function metal film, the second layer metal film directly contacts the organic semiconductor film, and the second layer metal film also contacts the interconnecting wire. The invention simultaneously discloses a preparation method for the bimetal electrode structure applied to the organic circuit. The bimetal electrode structure applied to the organic circuit and the preparation method can reduce the cost in a plurality of aspects on the premise of not reducing the performance of the device, and promote the practicality of the organic circuit.
Description
Technical field
The present invention relates to the organic electronic field that learns a skill, particularly a kind of bimetal electrode structure that is applied to organic circuit and preparation method thereof.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work.People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, therefore, can realize the organic microelectric technique based on the organic polymer semi-conducting material of these characteristics, obtained people and more and more pay close attention under this trend.
Because the characteristic of organic semiconducting materials, in order to obtain ohmic contact preferably between electrode and organic semiconducting materials, (Au, Pt), thickness is between 50～100nm as the high work function precious metal of individual layer for the electrode that mainly uses of people at present.Owing to adopted precious metal, use this electrode structure will increase the cost of organic circuit, become one of major obstacle of the low-cost organic circuit of preparation.
A main method that addresses this problem at present is to adopt the organic conductive material of high work function to replace metal electrode, yet has the resistivity of machine electrode bigger, and unstable properties is unfavorable for doing the transfer wire of long distance.And can produce big potential barrier during with Metal Contact, reduce the conductivity of interconnection line integral body.
Therefore, have machine electrode to be still waiting further exploitation and could obtain to use more widely in organic circuit, the electrode structure of seeking a kind of low-cost and high-performance becomes a key issue that presses for solution of the low-cost organic circuit of current preparation.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of bimetal electrode structure that is applied to organic circuit, to solve the problem that exists in the single-layer metal membrane electrode, at the prerequisite decline low electrode cost of guaranteed performance, promotes the practicability of organic circuit.
Another object of the present invention is to provide a kind of preparation method who is applied to the bimetal electrode structure of organic circuit, to solve the problem that exists in the single-layer metal membrane electrode, at the prerequisite decline low electrode cost of guaranteed performance, promotes the practicability of organic circuit.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of bimetal electrode structure that is applied to organic circuit, this bimetal electrode structure are by organic semiconductor thin-film, ground floor metallic film, and the second layer metal film that is deposited on this ground floor metallic film constitutes; Wherein, for apical grafting touch device architecture, this ground floor metallic film is the high-work-function metal film, and this second layer metal film is the cheap metal film, this ground floor metallic film directly contacts with organic semiconductor thin-film, and this second layer metal film contacts with interconnection line; For end contact device architecture, this ground floor metallic film is the cheap metal film, this second layer metal film is the high-work-function metal film, and this second layer metal film directly contacts with organic semiconductor thin-film, and this second layer metal film contacts with interconnection line; High-work-function metal is precious metal material gold or platinum in the described high-work-function metal film, and cheap metal is aluminium or copper in the described cheap metal film.
In the such scheme, the gross thickness of described ground floor metallic film and second layer metal film is between 50nm to 100nm, and wherein, the thickness of high-work-function metal film is 1/3rd of gross thickness, and the thickness of cheap metal film is 2/3rds of gross thickness.
In the such scheme, described ground floor metallic film and second layer metal film were formed by metal nanoparticle separately before not carrying out process annealing, and particle grain size is below 100nm.
A kind of preparation method who is applied to the bimetal electrode structure of organic circuit, this method comprises:
Preparation is used to deposit the metal nanoparticle dispersion system of ground floor metallic film and second layer metal film;
For apical grafting touch structure, adopt metal nanoparticle dispersion to tie up to deposition ground floor metallic film on the organic semiconductor thin-film; For end contact structure, adopt metal nanoparticle dispersion to tie up to deposition ground floor metallic film on the substrate;
Adopt metal nanoparticle dispersion to tie up to deposition second layer metal film on the ground floor metallic film;
Ground floor metallic film and second layer metal film to preparation carry out the process annealing processing.
In the such scheme, described preparation is used for depositing the step of the metal nanoparticle dispersion system of ground floor metallic film and second layer metal film, adopt sol-gal process, chemical codeposition or hydro thermal method to be prepared, the dispersant for preparing this metal nanoparticle dispersion system employing is toluene, chlorobenzene, methyl phenyl ethers anisole or terpinol, this metal nanoparticle dispersion system adopts the metal nanoparticle of particle diameter below 100nm, and metal wherein is gold, platinum, aluminium or copper.
In the such scheme, described ground floor metallic film or second layer metal depositing of thin film method are inkjet printing.The printing device that described inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
In the such scheme, described ground floor metallic film and second layer metal film to preparation carries out in the step of process annealing processing, process annealing treatment process temperature guarantees not damage the performance of organic semiconducting materials below 200 ℃ when forming the favorable conductive metal electrode.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
This bimetal electrode structure that is applied to organic circuit provided by the invention owing to introduce the precious metal that cheap metal replaces non-key position, makes and can reduce the cost that organic assembly is made significantly in the prerequisite that does not reduce device performance.This preparation method who is applied to the bimetal electrode structure of organic circuit that the present invention provides in addition, adopted inkjet printing technology, can be compatible fully with other technologies of preparation organic circuit, and be low temperature process, can not cause damage to ready-made other organic functional thin films.The making apparatus that the equipment that is adopted is compared silicon base chip is cheaply a lot, helps producing the organic circuit of very low cost; The figure transfer of functional material is finished by addition technology simultaneously, can significantly reduce the waste of material, helps reducing the cost of circuit production.In sum, bimetal electrode structure provided by the invention and preparation method thereof can many-side reduces cost under the device performance prerequisite not reducing, and promotes the practicability of organic circuit.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description,
Fig. 1 is the schematic diagram that is applied to the bimetal electrode structure of apical grafting touch structure organic field effect tube provided by the invention;
Fig. 2 is the process chart that is applied to the bimetal electrode structure of organic field effect tube provided by the invention; Wherein:
Fig. 2-1 is the schematic diagram of preparation ground floor metallic film on organic semiconductor layer;
Fig. 2-2 is the schematic diagram of preparation second layer metal film on the ground floor metallic film;
Fig. 2-3 carries out the schematic diagram that process annealing is handled for the bimetallic electrode to preparation;
Fig. 3 is the schematic diagram that is applied to the bimetal electrode structure of end contact structure organic field effect tube provided by the invention;
Fig. 4 is the process chart that is applied to the bimetal electrode structure of organic field effect tube provided by the invention; Wherein:
Fig. 4-1 is the schematic diagram of preparation ground floor metallic film on insulating barrier;
Fig. 4-2 is the schematic diagram of preparation second layer metal film on the ground floor metallic film;
Fig. 4-3 carries out the schematic diagram that process annealing is handled for the bimetallic electrode to preparation.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This bimetal electrode structure that is applied to organic circuit provided by the invention can be applied to apical grafting touch and end contact organic field-effect tube.
As shown in Figure 1, Fig. 1 is the schematic diagram that is applied to the bimetal electrode structure of apical grafting touch structure organic field effect tube provided by the invention, and this structure comprises: ground floor metallic film 101, second layer metal film 102 and organic semiconductor layer 103.The ground floor metallic film is the high-work-function metal film, and the second layer metal film is the cheap metal film.The high-work-function metal film directly contacts with organic semiconductor thin-film, and the cheap metal film contacts with interconnection line.
Described high-work-function metal is precious metal materials such as gold or platinum, and described cheap metal is aluminium or copper etc.The gross thickness of ground floor metallic film and second layer metal film is between 50nm to 100nm, and wherein, the thickness of high-work-function metal layer is 1/3rd of gross thickness, and the thickness of cheap metal layer is 2/3rds of gross thickness.Described ground floor metallic film and second layer metal film were formed by metal nanoparticle separately before not carrying out process annealing, and particle grain size is below 100nm.
Based on the described structural representation that is applied to bimetallic electrode of Fig. 1, Fig. 2 shows the process chart that is applied to the bimetal electrode structure of organic field effect tube provided by the invention, and this method may further comprise the steps:
In this step, adopt the metal nanoparticle of particle diameter below 100nm to rely the preparation dispersion; The used metal of dispersion has precious metals such as gold, platinum, and cheap metal such as aluminium, copper; The used dispersant of dispersion is a toluene, chlorobenzene, organic solvents such as methyl phenyl ethers anisole and terpinol.
Shown in Fig. 2-1, in this step, the material of described ground floor metallic film is the precious metal of high work functions such as gold, platinum.The preparation method of described ground floor metallic film is an inkjet technology; The printing device that described inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
Shown in Fig. 2-2, in this step, the material of described second layer metal film is cheap metals such as aluminium, copper gold.The preparation method of described second layer metal film is an inkjet technology; The printing device that described inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
Shown in Fig. 2-3, in this step, the temperature of described process annealing treatment process 200 ℃ once, make bimetallic electrode form smooth, metallic conductor closely, and, reduce whole resistivity in the place formation excellent contact that ground floor contacts with the second layer metal film.
As shown in Figure 3, Fig. 3 is the schematic diagram that is applied to the bimetal electrode structure of end contact structure organic field effect tube provided by the invention; This structure comprises: ground floor metallic film 301, second layer metal film 302, insulating barrier 303.The ground floor metallic film is the cheap metal film, and the second layer metal film is the high-work-function metal film.The high-work-function metal film directly contacts with organic semiconductor thin-film, and the high-work-function metal film contacts with interconnection line.
Described high-work-function metal is precious metal materials such as gold or platinum, and described cheap metal is aluminium or copper etc.The gross thickness of ground floor metallic film and second layer metal film is between 50nm to 100nm, and wherein, the thickness of high-work-function metal layer is 1/3rd of gross thickness, and the thickness of cheap metal layer is 2/3rds of gross thickness.Described ground floor metallic film and second layer metal film were formed by metal nanoparticle separately before not carrying out process annealing, and particle grain size is below 100nm.
Based on the described structural representation that is applied to bimetallic electrode of Fig. 3, Fig. 4 shows the process chart that preparation provided by the invention is applied to the bimetal electrode structure of end contact structure organic field effect tube, and this method may further comprise the steps:
In this step, adopt the metal nanoparticle of particle diameter below 100nm to rely the preparation dispersion; The used metal of dispersion has precious metals such as gold, platinum, and cheap metal such as aluminium, copper; The used dispersant of dispersion is a toluene, chlorobenzene, organic solvents such as methyl phenyl ethers anisole and terpinol.
Step 402,303 preparation ground floor metallic films 301 on insulating barrier;
Shown in Fig. 4-1, in this step, the material of described ground floor metallic film is cheap metals such as aluminium, copper gold.The preparation method of described ground floor metallic film is an inkjet technology, and the printing device that this inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
Shown in Fig. 4-2, in this step, the material of described second layer metal film is the precious metal of high work functions such as gold, platinum.The preparation method of described second layer metal film is an inkjet technology, and the printing device that this inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
Shown in Fig. 4-3, in this step, the temperature of described process annealing treatment process 200 ℃ once, make bimetallic electrode form smooth, metallic conductor closely, and, reduce whole resistivity in the place formation excellent contact that ground floor contacts with the second layer metal film.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a bimetal electrode structure that is applied to organic circuit is characterized in that, this bimetal electrode structure is by organic semiconductor thin-film, ground floor metallic film, and the second layer metal film that is deposited on this ground floor metallic film constitutes;
Wherein, for apical grafting touch device architecture, this ground floor metallic film is the high-work-function metal film, and this second layer metal film is the cheap metal film, this ground floor metallic film directly contacts with organic semiconductor thin-film, and this second layer metal film contacts with interconnection line;
For end contact device architecture, this ground floor metallic film is the cheap metal film, this second layer metal film is the high-work-function metal film, and this second layer metal film directly contacts with organic semiconductor thin-film, and this second layer metal film contacts with interconnection line;
High-work-function metal is precious metal material gold or platinum in the described high-work-function metal film, and cheap metal is aluminium or copper in the described cheap metal film.
2. the bimetal electrode structure that is applied to organic circuit according to claim 1, it is characterized in that, the gross thickness of described ground floor metallic film and second layer metal film is between 50nm to 100nm, wherein, the thickness of high-work-function metal film is 1/3rd of gross thickness, and the thickness of cheap metal film is 2/3rds of gross thickness.
3. the bimetal electrode structure that is applied to organic circuit according to claim 1, it is characterized in that, described ground floor metallic film and second layer metal film were formed by metal nanoparticle separately before not carrying out process annealing, and particle grain size is below 100nm.
4. a preparation method who is applied to the bimetal electrode structure of organic circuit is characterized in that, this method comprises:
Preparation is used to deposit the metal nanoparticle dispersion system of ground floor metallic film and second layer metal film;
For apical grafting touch structure, adopt metal nanoparticle dispersion to tie up to deposition ground floor metallic film on the organic semiconductor thin-film; For end contact structure, adopt metal nanoparticle dispersion to tie up to deposition ground floor metallic film on the substrate;
Adopt metal nanoparticle dispersion to tie up to deposition second layer metal film on the ground floor metallic film;
Ground floor metallic film and second layer metal film to preparation carry out the process annealing processing.
5. the preparation method who is applied to the bimetal electrode structure of organic circuit according to claim 4, it is characterized in that, described preparation is used for depositing the step of the metal nanoparticle dispersion system of ground floor metallic film and second layer metal film, adopt sol-gal process, chemical codeposition or hydro thermal method are prepared, the dispersant for preparing this metal nanoparticle dispersion system employing is a toluene, chlorobenzene, methyl phenyl ethers anisole or terpinol, this metal nanoparticle dispersion system adopts the metal nanoparticle of particle diameter below 100nm, and metal wherein is a gold, platinum, aluminium or copper.
6. the preparation method who is applied to the bimetal electrode structure of organic circuit according to claim 4 is characterized in that, described ground floor metallic film or second layer metal depositing of thin film method are inkjet printing.
7. the preparation method who is applied to the bimetal electrode structure of organic circuit according to claim 6 is characterized in that, the printing device that described inkjet printing adopts is the high-resolution printers of resolution more than or equal to 1000dpi.
8. the preparation method who is applied to the bimetal electrode structure of organic circuit according to claim 4, it is characterized in that, described ground floor metallic film and second layer metal film to preparation carries out in the step of process annealing processing, process annealing treatment process temperature guarantees not damage the performance of organic semiconducting materials below 200 ℃ when forming the favorable conductive metal electrode.
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| EP2251920A1 (en) * | 2009-05-12 | 2010-11-17 | Università Degli Studi Di Milano - Bicocca | Method of manufacturing electrical contacts on organic semiconductors |
| CN102789989A (en) * | 2012-08-15 | 2012-11-21 | 京东方科技集团股份有限公司 | Polycrystalline silicon transistor, display device and manufacturing method of polycrystalline silicon transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293825A (en) * | 1998-01-16 | 2001-05-02 | 薄膜电子有限公司 | Field-effect tranisistor |
| US6656763B1 (en) * | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
| CN1550049A (en) * | 2001-09-05 | 2004-11-24 | ������������ʽ���� | Polymer structure and functional element having the same, and transistor and display using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293825A (en) * | 1998-01-16 | 2001-05-02 | 薄膜电子有限公司 | Field-effect tranisistor |
| CN1550049A (en) * | 2001-09-05 | 2004-11-24 | ������������ʽ���� | Polymer structure and functional element having the same, and transistor and display using the same |
| US6656763B1 (en) * | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
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