CN101656466B - High-integration intelligent power module - Google Patents
High-integration intelligent power module Download PDFInfo
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- CN101656466B CN101656466B CN2009101022473A CN200910102247A CN101656466B CN 101656466 B CN101656466 B CN 101656466B CN 2009101022473 A CN2009101022473 A CN 2009101022473A CN 200910102247 A CN200910102247 A CN 200910102247A CN 101656466 B CN101656466 B CN 101656466B
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- module
- power
- parallel plate
- plate capacitor
- integration intelligent
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- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000725 suspension Substances 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
The invention provides a high-integration intelligent power module, comprising a shell and a power base plate, wherein, the shell is internally integrated with a power module, a driving module as well as a built-in auxiliary module; the built-in auxiliary module at least comprises a suspension power supply module, a parallel plate capacitive matrix module, a time constant setting capacitive module, a short-circuit protection module, a three-phase N-end current detection module and a temperature detection module. The high-integration intelligent power module is applicable to driving a frequency converter of a motor and various inverse power supplies.
Description
Technical field
The present invention relates to a kind of intelligent power module (High-Integrated Intelligent PowerModule; Be abbreviated as HIPM)), particularly a kind of high-integration intelligent power module that utilizes novel plug (circuit) to come further to promote intelligent power module (IPM) integrated level.
Background technology
SPM; Be IPM (Intelligent Power Module); Not only integrate device for power switching IGBT and drive circuit, but also have under voltage, overcurrent and fault detect, defencive function such as overheated, and can export rub-out signal to CPU.Therefore, use the system of intelligent power module, under system's generation load accident situation or improper use situation, can guarantee that still IPM self is not damaged.IPM is just winning increasing market with its high reliability, low-loss, low development cost, especially is suitable for the frequency converter and the various inverter of drive motors.It is frequency control, metallurgical machinery, electric traction, servo-drive, a kind of very desirable power electronic device of frequency-conversion domestic electric appliances.
IPM develops so far, and its volume and power consumption progressively reduce, and its function is more and more perfect.Yet with exploitation and the IPM as its advantage easy to use, its integrated level does not obtain great-leap-forward development.Still there is following problem in present market mainstream IPM:
1, the IPM of three phase full bridge construction packages turns on and off, and IGBT drive circuit of brachium pontis needs a large amount of peripheral circuits to cooperate on it, so integrated level is lower.2, the using and the caused negative pressure problem of the long-time switch conduction of following brachium pontis of Da Rong value electric capacity in the peripheral circuit can cause the brachium pontis false triggering, and this has not only increased the unsteadiness of system obviously, also increases the cost of system building.3, for building low-cost control system current detecting; The IPM module is by initial single N end output; Develop into discrete three-phase N end output nowadays; But the output of its three-phase N end still needs oneself to build the signals collecting loop, increases user's development difficulty, under the careless situation of use, can cause system failure.
Summary of the invention
The objective of the invention is to work out a kind of high-integration intelligent power module.
The present invention is directed in the existing market IPM needs peripheral charging circuit provide suspended power supply to trigger brachium pontis IGBT on the three-phase, and three-phase N end current detecting interface function imperfection, the problem that integrated level is not high have proposed a kind of high-integration intelligent power module.
Technical scheme of the present invention is: comprise shell and power substrate; Be integrated with power model, driver module in the enclosure; Also be integrated with built-in supplementary module in the shell, described built-in supplementary module comprises that at least suspended power supply module, parallel plate capacitor matrix module, time constant are provided with capacitance module, short-circuit protection module, three-phase N end current detection module and temperature detecting module; Be connected with the suspended power supply module on the driver module, time constant is provided with capacitance module, short-circuit protection module, temperature detecting module; Be connected with three-phase N end current detection module on the power model, the parallel plate capacitor matrix module is gone into driver module with the suspended power supply module and is connected.
Advantage of the present invention: the one, there is not peripheral bootstrapping charging capacitor, so there is not the switch conduction time restriction, significantly reduced HVIC (high voltage integrated circuit) misoperation, the 2nd, use the present invention in the system, system building is more easy.The 3rd, integrated level is high, and the present invention utilizes new material to fill packaging technology bootstrapping charging circuit, voltage stabilizing and time setting electric capacity are set in IPM, has improved integrated level greatly.
Description of drawings
Fig. 1 is an external pin sketch map of the present invention;
Fig. 2 is inner each functional block diagram of the present invention;
Fig. 3 is the built-in suspended power supply modular structure of a present invention sketch map;
Fig. 4 is a three-phase N end current sense function modular structure sketch map of the present invention;
Fig. 5 generates the resistance sketch map according to the shop process for copper;
Fig. 6 is that embedded technology generates the planar resistor sketch map.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
As shown in Figure 1, be external pin sketch map of the present invention.The present invention utilizes new material to fill packaging technology; Do not increasing under the prerequisite that the IPM volume encapsulates; Reduced the external terminal of conventional definition; The present invention only needs 17 pins, comprising: dc power supply pin (pin 1 and pin 2), mistake output signal (pin 3), six road pwm control signals (pin 4-pin 9), three-phase N end current detection signal (pin 10-pin 12), power side direct current (pin 13 and pin 17), three-phase output pin (pin 14-pin 16).The present invention makes that through significantly reducing conventional IPM external pin the integrated level of IPM is higher, and reliability is stronger, thus make its use and system building more easy.
Shown in Figure 2 is each functional block diagram of enclosure of the present invention.Enclosure of the present invention is integrated with power model, driver module and built-in supplementary module.Described built-in supplementary module comprises that at least suspended power supply module 1, parallel plate capacitor matrix module 2, time constant are provided with capacitance module 3, short-circuit protection module 4, three-phase N end current detection module 5 and temperature detecting module 6.Be connected with suspended power supply module 1 on the driver module, time constant is provided with capacitance module 3, short-circuit protection module 4, temperature detecting module 6; Be connected with three-phase N end current detection module 5 on the power model, parallel plate capacitor matrix module 2 is connected with suspended power supply module 1, driver module.
Fig. 3 is built-in suspended power supply module 1 structural representation of the present invention.Built-in suspended power supply module 1 comprises signal source, speed-sensitive switch S1 and S2, diode D1 and D2, the parallel plate capacitor C of a self-oscillation
HWith C
LAnd resistance R
G1, they form the power supply that need not down the pipe conducting and can directly supply power, and realize the C of pulse control thus
LWith C
HThe break-make interlocking of power delivery, that is: during the S1 conducting, C
LCharging, this moment, S2 turn-offed; When S1 turn-offs, S2 conducting, C
LGive C
HCharging, last pipe can realize conducting control smoothly.Described speed-sensitive switch S1 is N type MOS, and speed-sensitive switch S2 is P type MOS.
Built-in suspended power supply module 1 of the present invention does not need the capacitances to supply power of Da Rong value, so electric capacity can use the embedded parallel plate capacitor of low capacity, and it can not influence 1 pair of operating characteristic that goes up the pipe power supply of suspended power supply module.
The parallel plate capacitor matrix of parallel plate capacitor matrix module 2 for utilizing packaging technology to form.It is the geometry that utilizes between the power base plate line, between input pin and inner COM, inserts the direct parallel plate capacitor matrix that forms of material of high-k.Parallel plate capacitor matrix module 2 is used for the filtering of three-phase six tunnel drive signals, and the filtering of FO mistake output signal.HIIPM three-phase six road pwm control signals of the present invention can be connected directly to CPU, and do not have the restriction of pipe conducting sequential down.As far as the conducting of last pipe control, removed in the application circuits such as actual rectification, inversion, on manage conducting sequential and duration for the switch constraint of brachium pontis down.
Time constant is provided with capacitance module 3, is located near the specific pin of driver module (IC) place.It utilizes the geometry between the power base plate line, near inserting high dielectric constant material in the specific pin of driver module place, like brium carbonate, directly forms parallel plate capacitor.It is to rely on the technology encapsulation to realize that parallel plate capacitor is built in HIIPM inside, and therefore outside no time constant is provided with pin.
Short-circuit protection module (circuit) 4, it is to rely on the technology encapsulation to realize parallel plate capacitor and the filtering RC module (circuit) that noninductive, high accuracy, low thermal impact resistance form, and is built in HIIPM inside, therefore the no short-circuit protection pin in outside.This module 4 has been optimized wire length and path in the short-circuit protection, makes HIIPM short-circuit protection ability improve.Specifically as shown in Figure 5; It is to rely on the shop process for copper to form; Through the control circuit board upper berth copper in the IPM module, produce the copper cash of certain width and length, to generate the resistance of setting resistance; Thus technology formation embedded resistance have high accuracy, high linear, low perception, to the insensitive characteristics of frequency, the integrated current that is fit to very much to make IPM inner (being fit to aluminium base) detects resistance.The equivalent resistance that R forms for shop copper among Fig. 5,7 is through hole, and 8 is circuit board bottom copper cash, and 9 is circuit board top layer copper cash.
Fig. 4 is a three-phase N end current sense function modular structure sketch map of the present invention.It utilizes the geometry of the cabling of power substrate, low stray inductance, and low-temperature coefficient, high power and high-precision embedded detection resistance R
SU, R
SV, R
SWBe integrated on the power substrate, and output leads to signal end separately as signal, pin 10,11,12 is directly exported with single N end at the power end, and utilizes the encapsulating packaged type to protect.
Temperature detecting module (circuit) 6 is integrated in the HIIPM, is about to overheat protector and is integrated in HIIPM inside.
Fig. 6 is the sketch map that embedded technology generates planar resistor, and wherein 10 is IPM module control circuit baseplate material.The present invention relies on the series connection of parallel strip resistance, forms predetermined resistance value.Its computing formula is:
Wherein, L is a wall scroll parallel resistance length, and W is a parallel-plate resistance width, and t is the degree of depth of parallel-plate resistance.
By seeing that current circuit is reverse in the adjacent parallel bar resistance among the figure, can effectively offset its self-induction, the embedded resistance that therefore constitutes has extremely low self-induction value.
Characteristics of the present invention:
1, suspended power supply module 1 characteristics, the signal source, two that it comprises a self-oscillation close at a high speed open, two diodes, two electric capacity, its forms the mechanism of the charging (re-flash) of opening circuit with master power switch (specifically).Whether irrelevant the generation of suspended power supply and the conducting of master power switch be, and this practice can significantly reduce the appearance value of bootstrapping charging capacitor.Reduce the appearance value of bootstrap capacitor, reduce negative pressure on the one hand and impact, the false triggering fault of avoiding negative pressure to cause on the other hand, provides possibility for encapsulating the use of direct realization parallel plate capacitor in IPM.
2, the present invention further optimizes three-phase N end as current sense function in the low-cost system; The resistance of three arm current detecting is integrated on the power substrate; And lead to signal end separately as signal output, directly with the output of single N end, and utilize the encapsulating packaged type to protect at the power end.In practical implementation, utilize the geometry of the cabling of power substrate, reach low stray inductance, low-temperature coefficient, high power and high-precision test resistance.
3, high-integration intelligent power module provided by the present invention (HIIPM), the capacitance size of parallel plate capacitor depends on the thickness and the dielectric constant of insulating barrier in the embedded capacitance, also with the size of circuit board relation is arranged simultaneously:
C＝AD
kK/t
Wherein:
The capacitance that C=is whole
The A=area
D
k=dielectric constant
K is a constant
T=thickness
Can learn by above formula; Can obtain higher capacitance through the new material (like barium titanate) of in insulating barrier, filling high-k; Utilize the geometry between the power base plate line; Material in inserting high-k near the pin place of driver module (IC) directly forms parallel plate capacitor, in the IPM encapsulation, realizes predetermined capacitance.
4, the present invention has minimized because of the stray inductance that the loop produced of the HVIC of driving; The negative voltage amplitude that is produced except that the underarm switch conduction can greatly reduce; Appearance value because of suspended power supply also greatly reduces simultaneously; The time of keeping of the negative voltage that the underarm switch conduction is produced is significantly reduction also, so can effectively solve HVIC causes misoperation too greatly because of negative pressure problem.
Claims (6)
1. high-integration intelligent power module; Comprise shell and power substrate; Be integrated with power model, driver module in the enclosure; Also be integrated with built-in supplementary module in it is characterized in that in the shell, described built-in supplementary module comprises that at least suspended power supply module, parallel plate capacitor matrix module, time constant are provided with capacitance module, short-circuit protection module, three-phase N end current detection module and temperature detecting module; Be connected with the suspended power supply module on the driver module, time constant is provided with capacitance module, short-circuit protection module, temperature detecting module, parallel plate capacitor matrix module and power model; Be connected with three-phase N end current detection module, short-circuit protection module and driver module on the power model; The suspended power supply module comprises signal source, speed-sensitive switch S1 and S2, diode D1 and D2, the parallel plate capacitor C of a self-oscillation
HWith C
LAnd resistance R
G1, parallel plate capacitor C
LD1 is connected with diode, parallel plate capacitor C
HD2 is connected with diode, during the S1 conducting, and C
LCharging, this moment, S2 turn-offed; When S1 turn-offs, S2 conducting, C
LGive C
HCharging.
2. high-integration intelligent power module according to claim 1 it is characterized in that the described speed-sensitive switch S1 of suspended power supply module is N type MOS, and speed-sensitive switch S2 is P type MOS.
3. high-integration intelligent power module according to claim 1 is characterized in that the parallel plate capacitor matrix module utilizes the geometry between the power base plate line, between input pin and inner COM, inserts high dielectric constant material and directly forms; The function of parallel plate capacitor matrix module is used for the filtering of three-phase six tunnel drive signals and FO mistake output signal.
4. high-integration intelligent power module according to claim 1 is characterized in that time constant is provided with capacitance module and is located near the specific pin of drive IC place, inserts the material of high-k, directly forms parallel plate capacitor.
5. high-integration intelligent power module according to claim 1 is characterized in that the short-circuit protection module is to rely on the parallel plate capacitor of technology encapsulation and the filtering RC module of noninductive, high accuracy, low thermal impact resistance formation.
6. high-integration intelligent power module according to claim 1 is characterized in that three arm current sense resistor Rsu, Rsv, the Rsw of three-phase N end current detection module is integrated on the power substrate, and draws separately as the signal output pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009101022473A CN101656466B (en) | 2009-09-10 | 2009-09-10 | High-integration intelligent power module |
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| CN2009101022473A CN101656466B (en) | 2009-09-10 | 2009-09-10 | High-integration intelligent power module |
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| CN101656466A CN101656466A (en) | 2010-02-24 |
| CN101656466B true CN101656466B (en) | 2012-05-30 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332833B (en) * | 2011-09-21 | 2015-11-25 | 太原理工大学 | A kind of switched reluctance machines universal power converter based on IPM |
| CN102623950B (en) * | 2012-03-21 | 2014-04-30 | 美的集团股份有限公司 | Protection circuit for high-voltage integrated circuit |
| CN102728933A (en) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | Optimization structure based on inverter welding machine main circuit |
| CN103236422B (en) * | 2013-03-29 | 2015-12-23 | 广东美的制冷设备有限公司 | Intelligent Power Module and manufacture method thereof |
| CN104111416B (en) * | 2013-07-23 | 2017-01-11 | 广东美的制冷设备有限公司 | Test circuit used for intelligent power module and test method thereof |
| CN103973198B (en) * | 2014-04-29 | 2016-10-05 | 无锡市晶源微电子有限公司 | Electric motor car three-phase half-bridge motor drive circuit with multipath voltage regulation output |
| CN105790562B (en) * | 2016-05-24 | 2019-02-05 | 深圳市鑫宇鹏电子科技有限公司 | A kind of intelligent power module sampling antistatic enhancing |
| CN105790561A (en) * | 2016-05-24 | 2016-07-20 | 深圳市鑫宇鹏电子科技有限公司 | Intelligent power module with reinforced sampling anti-electrostatic protection |
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| CN2626129Y (en) * | 2003-06-06 | 2004-07-14 | 深圳市鹏科兴实业有限公司 | Integral intelligent power module |
| US20070132410A1 (en) * | 2005-08-31 | 2007-06-14 | Thor Power Corp. | Control electronics for brushless dc motors |
| CN201479004U (en) * | 2009-09-10 | 2010-05-19 | 嘉兴斯达微电子有限公司 | High-integrated intelligent power module |
-
2009
- 2009-09-10 CN CN2009101022473A patent/CN101656466B/en active Active
Patent Citations (3)
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|---|---|---|---|---|
| CN2626129Y (en) * | 2003-06-06 | 2004-07-14 | 深圳市鹏科兴实业有限公司 | Integral intelligent power module |
| US20070132410A1 (en) * | 2005-08-31 | 2007-06-14 | Thor Power Corp. | Control electronics for brushless dc motors |
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Effective date of registration: 20180111 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |