CN216413916U - Semiconductor circuit and electric control device - Google Patents
Semiconductor circuit and electric control device Download PDFInfo
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- CN216413916U CN216413916U CN202122628646.2U CN202122628646U CN216413916U CN 216413916 U CN216413916 U CN 216413916U CN 202122628646 U CN202122628646 U CN 202122628646U CN 216413916 U CN216413916 U CN 216413916U
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Abstract
The utility model relates to a semiconductor circuit and an electric control device, comprising a high-voltage driving circuit, a power device circuit and a humidity detection circuit; the input end of the high-voltage driving circuit is used for being connected with a first driving signal, and the high-voltage driving circuit outputs a second driving signal to the control end of a switching tube of the power device circuit according to the first driving signal; the humidity detection circuit is used for detecting the humidity of the semiconductor circuit and outputting a humidity signal to the high-voltage driving circuit; and the high-voltage driving circuit receives the humidity signal and turns off the second driving signal when the humidity signal is greater than a preset value. The semiconductor circuit with the humidity protection function is realized by arranging the humidity detection circuit in the semiconductor circuit, judging by using the detection result of the humidity detection circuit and switching off the output driving signal of the semiconductor circuit when the humidity is overhigh.
Description
Technical Field
The utility model relates to a semiconductor circuit and an electric control device, and belongs to the technical field of semiconductor circuit application.
Background
Semiconductor circuits, such as intelligent Power modules (ipm) are Power driven products that combine Power electronics with integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit together, and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat circuits. The intelligent power module receives a control signal of the MCU to drive a subsequent circuit to work on one hand, and sends a state detection signal of the system back to the MCU on the other hand. Compared with the traditional discrete scheme, the intelligent power module wins a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. The existing intelligent power modules are not protected by humidity and are easily damaged by humidity.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is to solve the problem of easy moisture damage in the existing semiconductor circuit.
Specifically, the utility model discloses a semiconductor circuit, which comprises a high-voltage driving circuit, a power device circuit and a humidity detection circuit; the input end of the high-voltage driving circuit is used for being connected with a first driving signal, and the high-voltage driving circuit outputs a second driving signal to the control end of a switching tube of the power device circuit according to the first driving signal; the humidity detection circuit is used for detecting the humidity of the semiconductor circuit and outputting a humidity signal to the high-voltage driving circuit; and the high-voltage driving circuit receives the humidity signal and turns off the second driving signal when the humidity signal is greater than a preset value.
Optionally, the humidity detection circuit comprises a humidity sensor.
Optionally, the humidity detection circuit includes a voltage division circuit, and the voltage division circuit includes a power supply, a pull-up resistor, a humidity sensitive resistor, and a ground connected in series in sequence.
Optionally, a connection point of the pull-up resistor and the humidity sensitive resistor serves as a humidity detection port of the semiconductor circuit.
Optionally, the preset value is a preset voltage value, and the humidity signal is a voltage value of the connection point; when the voltage value at the connecting point is larger than the preset voltage value, the semiconductor electrically turns off the second driving signal, and the voltage of the humidity detection port is pulled down to the ground level.
Optionally, when the humidity signal is greater than a preset value, the high-voltage driving circuit outputs a humidity protection signal to an external controller.
Optionally, the power device circuit includes a first switch tube, an upper bridge arm switch tube and a lower bridge arm switch tube, the upper bridge arm switch tube includes a second switch tube, a fourth switch tube and a sixth switch tube, and the lower bridge arm switch tube includes a third switch tube, a fifth switch tube and a seventh switch tube;
the high-voltage driving circuit is a 7-channel driving HVIC; the 7-channel driving HVIC is provided with 7 paths of driving signal output ports, and the output ports are used for outputting second driving signals to the control ends of the first to seventh switching tubes;
the first switch tube is a PFC switch tube, and the first to seventh switch tubes are all IGBT tubes.
Optionally, the 7-channel drive HVIC includes a humidity protection circuit, a 3-channel high-side drive circuit, a 3-channel low-side drive circuit, and a PFCIGBT drive circuit; the humidity protection circuit is used for judging the humidity signal and the preset value; the humidity protection circuit is connected with the 3-channel high-side drive circuit, the output end of the humidity protection circuit is connected with the 3-channel low-side drive circuit, and the humidity protection circuit is connected with the PFCIGBT drive circuit through a logic circuit.
Optionally, the high voltage driving circuit further includes an error reporting circuit, and when the humidity signal is greater than a preset value, the error reporting circuit outputs an error reporting signal to the outside.
The utility model also discloses an electric control device, which comprises the semiconductor circuit and the external controller; the external controller outputs the first driving signal to the semiconductor circuit, and controls to turn off the first driving signal after receiving the humidity protection signal.
According to the semiconductor circuit and the electric control device, the humidity detection circuit is arranged in the semiconductor circuit, the judgment is carried out by utilizing the detection result of the humidity detection circuit, and the output driving signal of the semiconductor circuit is turned off when the humidity is too high, so that the semiconductor circuit with the humidity protection function is realized, the service life of the semiconductor circuit is prolonged, and the semiconductor circuit is prevented from being damaged.
Drawings
Fig. 1 is a block diagram of a semiconductor circuit and an MCU of an electric control device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the semiconductor circuit of FIG. 1;
FIG. 3 is a schematic diagram of the high voltage drive circuit of FIG. 1;
FIG. 4 is a package diagram of a semiconductor circuit;
FIG. 5 is a block diagram of a semiconductor circuit;
fig. 6 is still another block diagram of the semiconductor circuit.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The semiconductor circuit provided by the utility model is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc.
At present, IPM intelligent power modules are not provided with humidity sensors and humidity protection. The humidity is harmful to electronic components such as IPM and the like and the whole machine, and most electronic products are required to be operated and stored under dry conditions. Statistically, over 1/4 industrial manufacturing defects are associated with moisture hazards worldwide each year. For the semiconductor industry, the moisture hazard has become one of the major factors affecting product quality. The major harm of moisture to the semiconductor industry is that moisture can penetrate through the IC plastic package and enter the IC through gaps such as pins, causing the IC to absorb moisture. Steam is formed in the heating stage of the process and the resulting pressure causes cracking of the resin package and oxidation of the metal inside the device, resulting in product failure.
The amount of water vapor in the air not only affects the humidity of the air, but also causes the air to be wet or dry. The dryness and wetness of air are usually expressed by the density of water vapor in air. The method is complicated to measure the density of water vapor in air directly. Theoretical calculation shows that under the condition of general air temperature, the water vapor density of the air is very close to the pressure value of the water vapor in the air. The water vapour density of the air can be defined again as the pressure of the water vapour contained in the air, which is also called the absolute humidity of the atmosphere, indicated by the symbol D, and is generally expressed in mmHg. The percentage of the absolute humidity of the atmosphere to the saturated water vapour pressure at the current temperature is generally referred to as the relative humidity of the atmosphere in% HP, and if the pressure of the water vapour contained in the atmosphere is equal to the saturated water vapour pressure at the current temperature, the relative temperature of the atmosphere is equal to 100% RH.
The IPM is applied to frequency conversion electric appliances such as a frequency conversion air conditioner, a frequency converter and the like, and when the electric appliances work under the condition of very high environmental humidity, the IPM and other electronic components are easy to be affected with damp to cause short circuit, and the IPM is burnt out.
The present invention first proposes a semiconductor circuit, as shown in fig. 1, the semiconductor circuit 20 includes a power device circuit 30, a high voltage driving circuit 40, and a humidity detection circuit 50. The humidity detection circuit 50 is integrated inside the semiconductor circuit 20, and provides the semiconductor circuit 20 with a humidity protection function. The humidity detection circuit 50 detects the humidity inside the semiconductor circuit, and when the humidity is detected to exceed a preset value set by the high-voltage driving circuit 40, the high-voltage driving circuit 40 turns off all the outputs to protect the semiconductor circuit. An input terminal of the semiconductor circuit 20 is connected to a first driving signal, for example, a pulse control signal from an external controller; the output terminal of the semiconductor circuit 20 outputs a second driving signal for driving the switching transistor of the power device circuit 30. When the humidity value detected by the humidity detection circuit 50 is greater than the preset value set by the high voltage driving circuit 40, the high voltage driving circuit 40 may turn off the second driving signal to protect the semiconductor circuit from being damaged.
In some embodiments, the humidity detection circuit 50 is further connected to an electronically controlled microcontroller MCU, and the humidity detection circuit 50 outputs a detected humidity signal to the electronically controlled MCU, so that the MCU performs corresponding protection to realize dual protection.
In some embodiments, a humidity sensor is employed to achieve humidity detection. Humidity sensor, known in the english name of humidity transducer, is a sensor that senses the water vapor content of a gas and converts it into a usable output signal. The humidity sensitive element mainly has two categories of resistance type and capacitance type, and the humidity sensitive resistor is characterized in that a film made of humidity sensitive material is covered on a substrate, when water vapor in the air is adsorbed on the humidity sensitive film, the resistivity and the resistance value of the element are changed, and the humidity can be measured by utilizing the characteristic. For example, a circuit formed by sequentially connecting a power supply, a pull-up resistor, a humidity sensitive resistor and the ground in series is used for humidity detection, and a connection point of the humidity sensitive resistor and the pull-up resistor is led out to be used as a humidity detection signal. The humidity detection signal at this time is a voltage value. In the above-described series circuit, the series positions of the pull-up resistor and the humidity sensor resistor may be switched, and the change in humidity may be reflected by the change in voltage at the connection point between the pull-up resistor and the humidity sensor resistor.
In some embodiments, the integrated high-voltage driving circuit 40 with humidity protection function includes an upper bridge, a lower bridge, a PFC IGBT driver, functional circuits for enabling, undervoltage, overcurrent, overvoltage, high temperature, low temperature, excessive humidity, and error reporting, and a bootstrap circuit. The high-voltage driving circuit, the IGBT, the FRD, the bootstrap capacitor, the NTC, the humidity-sensitive resistor and the resistor form an IPM circuit, and the functions of three-phase inversion, PFC power factor regulation, enabling, under-voltage protection, over-current protection, over-voltage protection, high-temperature protection, low-temperature protection, humidity protection, error reporting and the like are realized. The working process of the humidity protection function circuit in the high-voltage driving circuit is as follows: after the SD of the high-voltage driving circuit receives a humidity signal which externally reflects the internal humidity of the semiconductor circuit, the microprocessor in the high-voltage driving circuit compares the received humidity signal (for example, the received humidity signal can be a voltage signal) with a preset value (corresponding to the humidity signal and can adopt a voltage value) corresponding to the set humidity of 70% PH, when the SD of the high-voltage driving circuit receives that the humidity signal which reflects the internal humidity of the external semiconductor circuit is greater than the preset value, the semiconductor circuit enters a humidity protection function, and the high-voltage driving circuit can turn off all outputs. In some embodiments, the SDTRIP pin that reflects the humidity fault is pulled down to ground at the same time, so that the MCU controlled by the external electronic control is informed through the SDTRIP pin to perform corresponding processing.
As shown in fig. 2, the semiconductor circuit is exemplified by IPM, and the humidity detection circuit includes a circuit composed of a humidity sensitive resistor R3 and a pull-up resistor R2. The present invention is described in detail with reference to fig. 2. The ports of PFCOUT \ HO1\ HO2\ HO3\ LO1\ LO2\ LO3 of the 7-channel high-voltage driving circuit HVIC40 integrated with the humidity protection function are respectively connected with the ports G of IGBTs 1\ IGBT2\ IGBT3\ IGBT4\ IGBT5\ IGBT6\ IGBT7, the port C of the IGBT is connected with the port CN of the FRD, the port E of the IGBT is connected with the port AN of the FRD, and the ports VB1\ VS1, VB2\ VS2 and VB3\ VS3 of the 7-channel driving HVIC40 with the humidity protection function are respectively connected with the bootstrap capacitor 201.
The TL of the 7-channel driving HVIC40 with humidity protection function is connected to the junction 202 of the NTC and the pull-up resistor R1, and is drawn out as a temperature detection port TTRIP of the IPM. One terminal of pull-up resistor R1 is connected to VDD and one terminal of NTC is connected to VSS.
The SD of the 7-channel drive HVIC40 with humidity protection is connected to the connection point 90 of the humidity sensitive resistor R3 and the pull-up resistor R2, and led out as the humidity detection port SDTRIP of the IPM. One end of the pull-up resistor R2 is connected to VDD, and one end of the humidity sensitive resistor R3 is connected to VSS.
VDD \ HIN1\ HIN2\ HIN3\ LIN1\ LIN2\ LIN3\ PFCIN \ FLY \ PFCTRIP \ ITRIP \ VSS are respectively led out as ports of IPM;
a C port of the PFC IGBT1 is connected with AN AN port of a fast recovery diode D1, AN IPM PFC port is led out, and a VCC1 port as IPM is led out from a CN port of a fast recovery diode D1; the C port of PFC IGBT1 is led out as the-VCC port of IPM;
the C port of the upper bridge arm IGBT2\ IGBT4\ IGBT6 is led out to be used as a VCC2 port of IPM;
e ports of lower bridge arms IGBT3\ IGBT5\ IGBT7 are led out to be used as-U \ V \ W ports of IPM respectively;
a U port as IPM is led out from the connection point of the upper bridge arm IGBT and the lower bridge arm IGBT of the A bridge;
a V port serving as an IPM is led out from a connection point of the upper bridge arm IGBT and the lower bridge arm IGBT of the B bridge;
and a W port as IPM is led out from the connection point of the upper bridge arm IGBT and the lower bridge arm IGBT of the C bridge.
The high voltage driving circuit 40 is described in detail with reference to a schematic diagram shown in fig. 3, and in fig. 3, the high voltage driving circuit 40 is a 7-channel driving HVIC. The integrated 7-channel drive HVIC with the humidity protection function comprises a high-side drive circuit 3 channel, a low-side drive circuit 3 channel and a 1-channel PFC IGBT drive;
the high-side driving circuit internally comprises a high-side undervoltage protection circuit and a bootstrap circuit, and realizes a high-side driving undervoltage protection function and a bootstrap power supply function;
an interlock and dead zone circuit is connected between the high-side drive circuit and the low-side drive circuit to realize the interlock and dead zone functions;
the power supply circuit comprises a 5V LDO circuit and a 1.2V BANDGAP circuit, supplies 5V voltage to all circuits inside the HVIC and external circuits, and provides a stable 1.2V voltage reference for the HVIC and the external circuits;
the power supply circuit is connected with the power supply under-voltage protection circuit to realize the power supply under-voltage protection function.
The HVIC also comprises an enabling circuit for realizing an enabling function; the overcurrent protection circuit realizes an overcurrent protection function; the overvoltage protection circuit realizes an overvoltage protection function; the temperature protection circuit realizes temperature protection functions including a high-temperature protection function and a low-temperature protection function; the humidity protection circuit realizes a humidity protection function. The device can further comprise a PFC overcurrent protection circuit, and overcurrent protection is realized when the PFC has an overcurrent fault. The device can also comprise an error reporting circuit which outputs error reporting signals to the outside when the conditions of undervoltage, overcurrent, PFC overcurrent, overvoltage, overtemperature, overhumidity and the like occur inside.
The humidity protection circuit is connected with the low-side drive circuit and the high-side drive circuit, and is also connected with the PFCIGBT drive circuit through the logic circuit. Through the connection relation, after the humidity protection circuit detects an over-humidity condition, the driving signals output by the low-side driving circuit, the high-side driving circuit and the PFCIGBT driving circuit are turned off.
In a word, the integrated 7-channel driver HVIC40 with the humidity protection function comprises an upper bridge driver, a lower bridge driver, a PFC IGBT driver, functional circuits such as enable, undervoltage, overcurrent, overvoltage, high temperature, low temperature, over-humidity and error reporting, and a bootstrap circuit. The HVIC, the IGBT, the FRD, the bootstrap capacitor, the NTC, the humidity sensitive resistor and the resistor form an IPM circuit, and the functions of three-phase inversion, PFC power factor regulation, enabling, under-voltage protection, over-current protection, over-voltage protection, high-temperature protection, low-temperature protection, humidity protection, error reporting and the like are realized. Specifically, the working process of the humidity protection function circuit inside the HVIC is as follows: after the SD of the HVIC receives the voltage division signals of the external IPM internal humidity sensing resistor R3 and the resistor R2, the microprocessor in the HVIC compares the received voltage signals with the voltage value corresponding to the set humidity of 70% PH, and when the SD of the HVIC receives the voltage division signals of the external IPM internal humidity sensing resistor R3 and the resistor R2, the voltage division signals are larger than the voltage value corresponding to the humidity of 70% PH. The voltage value corresponding to 70% PH is only an example, and the specific preset value is not limited in this embodiment, and can be flexibly set by a person skilled in the art.
Fig. 4-6 show package diagrams of the semiconductor circuit 20. Chips such as a high-voltage driving circuit, an IGBT (insulated gate bipolar transistor), an FRD (field-programmable gate diode), a diode combination, a humidity sensor and the like are assembled by adopting an IMS (IP multimedia subsystem) substrate, are connected by a bonding wire to form a complete semiconductor circuit, and are packaged together by epoxy plastic package materials to form physical protection.
Specifically, the package structure is described in detail with an IPM semiconductor circuit. The IPM module with humidity protection function comprises: a circuit aluminum substrate 23; a circuit wiring 25 formed on the insulating layer 24 provided on the surface of the circuit aluminum substrate 23, the circuit wiring as a whole being as shown in fig. 3, the rear surface of the circuit aluminum substrate 23 having a rugged texture 26; a circuit element 27 fixed to the circuit wiring 25; a metal line 28 connecting the circuit element 27 and the circuit wiring 25; a pin 29 connected to the circuit wiring 25, the remaining portion being covered with a plating layer; the entire smart power module 20 is sealed with a sealing resin 21.
The manufacturing method of the IPM module with the humidity protection function comprises the following steps:
forming an aluminum material into a proper size as a circuit aluminum substrate 23, forming texture 26 on the back surface of the circuit aluminum substrate by means of laser etching, polishing and the like, providing an insulating layer 24 on the surface of the circuit aluminum substrate 23, forming copper foil on the insulating layer 24, and forming circuit wiring 25 by etching the copper foil;
coating solder paste on a specific position of the circuit wiring 25;
copper materials are formed into appropriate shapes and subjected to surface plating treatment to form pins 29, as shown in fig. 5-6, in order to prevent the circuit elements 27 from being damaged by static electricity in the subsequent processing procedures, specific positions of the pins 29 are connected through reinforcing ribs 210;
placing circuit elements 27 and pins 29 on the solder paste;
the solder paste is solidified by reflow soldering, and the circuit element 27 and the lead 29 are fixed on the circuit wiring 25;
cleaning the flux remained on the circuit substrate 23 by cleaning methods such as spraying, ultrasonic and the like;
the circuit element 27 and the circuit wiring 25 are connected by the bonding wire;
if the circuit board 23 needs to be connected with the ground potential, the method further comprises the step of transferring the insulating layer 24 through the transfer hole and forming connection between the ground potential of the circuit wiring 25 and the circuit board 23 through the bonding wire;
sealing the elements by injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;
cutting off the reinforcing ribs 210 of the pins 29 and forming the required shape;
the test qualifier becomes the IPM module 20 by performing necessary tests by the test equipment.
The semiconductor circuit comprises a humidity detection circuit and a humidity protection circuit, wherein the humidity protection circuit judges a detection signal of the humidity detection circuit, and turns off an output driving signal of the semiconductor circuit when the humidity is overhigh, so that the semiconductor circuit with the humidity protection function is realized.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the utility model.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A semiconductor circuit is characterized by comprising a high-voltage driving circuit, a power device circuit and a humidity detection circuit; the input end of the high-voltage driving circuit is used for being connected with a first driving signal, and the high-voltage driving circuit outputs a second driving signal to the control end of a switching tube of the power device circuit according to the first driving signal; the humidity detection circuit is used for detecting the humidity of the semiconductor circuit and outputting a humidity signal to the high-voltage driving circuit; and the high-voltage driving circuit receives the humidity signal and turns off the second driving signal when the humidity signal is greater than a preset value.
2. The semiconductor circuit according to claim 1, wherein the humidity detection circuit comprises a humidity sensor.
3. The semiconductor circuit according to claim 1, wherein the humidity detection circuit comprises a voltage division circuit including a power supply, a pull-up resistor, a humidity sensitive resistor, and a ground connected in series in this order.
4. The semiconductor circuit according to claim 3, wherein a connection point of the pull-up resistor and the humidity sensitive resistor serves as a humidity detection port of the semiconductor circuit.
5. The semiconductor circuit according to claim 4, wherein the predetermined value is a predetermined voltage value, and the humidity signal is a voltage value of the connection point; when the voltage value at the connecting point is larger than the preset voltage value, the semiconductor electrically turns off the second driving signal, and the voltage of the humidity detection port is pulled down to the ground level.
6. The semiconductor circuit according to claim 1, wherein the high voltage driving circuit outputs a humidity protection signal to an external controller when the humidity signal is greater than a preset value.
7. The semiconductor circuit according to claim 1,
the power device circuit comprises a first switch tube, an upper bridge arm switch tube and a lower bridge arm switch tube, wherein the upper bridge arm switch tube comprises a second switch tube, a fourth switch tube and a sixth switch tube, and the lower bridge arm switch tube comprises a third switch tube, a fifth switch tube and a seventh switch tube;
the high-voltage driving circuit is a 7-channel driving HVIC; the 7-channel driving HVIC is provided with 7 paths of driving signal output ports, and the output ports are used for outputting second driving signals to the control ends of the first to seventh switching tubes;
the first switch tube is a PFC switch tube, and the first to seventh switch tubes are all IGBT tubes.
8. The semiconductor circuit of claim 7, wherein the 7-channel drive HVIC comprises a humidity protection circuit, a 3-channel high-side drive circuit, a 3-channel low-side drive circuit, and a PFCIGBT drive circuit; the humidity protection circuit is used for judging the humidity signal and the preset value; the humidity protection circuit is connected with the 3-channel high-side drive circuit, the output end of the humidity protection circuit is connected with the 3-channel low-side drive circuit, and the humidity protection circuit is connected with the PFCIGBT drive circuit through a logic circuit.
9. The semiconductor circuit according to claim 1, wherein the high voltage driving circuit further comprises an error reporting circuit, and the error reporting circuit outputs an error reporting signal to the outside when the humidity signal is greater than a predetermined value.
10. An electric control device comprising the semiconductor circuit according to claim 6 and an external controller; the external controller outputs the first driving signal to the semiconductor circuit, and controls to turn off the first driving signal after receiving the humidity protection signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122628646.2U CN216413916U (en) | 2021-10-29 | 2021-10-29 | Semiconductor circuit and electric control device |
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| CN202122628646.2U CN216413916U (en) | 2021-10-29 | 2021-10-29 | Semiconductor circuit and electric control device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114006349A (en) * | 2021-10-29 | 2022-02-01 | 广东汇芯半导体有限公司 | Semiconductor circuit and electric control device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114006349A (en) * | 2021-10-29 | 2022-02-01 | 广东汇芯半导体有限公司 | Semiconductor circuit and electric control device |
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