CN101656335A - Asymmetrical super-power radio-frequency switch module and preparation method thereof - Google Patents
Asymmetrical super-power radio-frequency switch module and preparation method thereof Download PDFInfo
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Abstract
The invention relates to an asymmetrical super-power radio-frequency switch module and a preparation method thereof. The asymmetrical super-power radio-frequency switch module adopts a structure thattwo asymmetrical channels are formed between an ANT-TX channel and an ANT-RX channel, and the switch of the two channels is controlled by an integrated silicon driving chip. The preparation method comprises the following steps: bonding an AIN substrate with super-high heat conduction, an integrated silicon driving chip and two PIN diode chips of the ANT-RX channel on a RO4350 basal plate with highheat conduction by silver paste; bonding high-power PIN diode chips of the ANT-TX channel i on the AIN substrate by the silver paste; and connecting the PIN diode chips, the integrated silicon driving chip and the RO4350 basal plate by gold bonding wires. The invention has the advantages that the asymmetrical super-power radio-frequency switch module meets the high-power operation conditions under long-time/extreme super-power switch control of power amplifiers of TD-SCDMA and WIMAX system base stations, works safely and reliably with the radio-frequency power greater than 35 W, and has highintegration level, low cost and good performance.
Description
Technical field:
That the present invention relates to is the preparation method of the super-power radio-frequency switch module of the asymmetric that drives of a kind of castle surface mount TTL/CMOS level, belongs to the mobile communication technology field.
Technical background
High-power RF transmitting-receiving control switch is wherein requisite nucleus module in the system of TDD.Industrial chain first stage of construction at the 3G of China's independent intellectual property right communication standard (TD-SCDMA), the base station is a weak link with high-power RF transmitting-receiving control switch always, like product both domestic and external can not satisfy system requirements aspect power capacity and the reliability always, when power was above above 40W, switch can damage.Cause when the construction of China TD-SCDMA first phase try net system base-station development and production manufacturer to have to consider with expensive scheme solution.And in these schemes, switch drive all is to be independent of outside the switch, the independent making on power board, and cost height not only, area occupied is also big, has strengthened the volume of power amplifier, has increased the power consumption of power amplifier, has reduced efficient, has improved the whole cost of power amplifier.Radio-frequency receiving-transmitting control switch in the TD-SCDMA communication system of ZTE company of prominent domestic communication system equipment manufacturing company development is in the long-term reliability test, this model switch is because the intrinsic characteristic of product, can not satisfy the high power work condition under long-time/maximum conditions, under the condition of radio-frequency power greater than 35W, failure rate is very high, has serious hidden danger of quality.
Summary of the invention
The present invention proposes is the asymmetric super-power radio-frequency switch module that castle surface mount TTL/CMOS level that TDD system base-station complete machines such as the TD-SCDMA of a kind of 3G of being applicable to and WIMAX are used drives, one of purpose is intended to satisfy the high power work condition under long-time/maximum conditions of TD-SCDMA and WIMAX system base-station power amplifier super high power switching controls, under the condition of radio-frequency power greater than 35W, can safe and reliable work.Two of purpose is intended to improve the integrated level of switch module, reduces cost, and optimizes performance.
Technical solution of the present invention: the super-power radio-frequency switch module of asymmetric, its structure be the ANT-TX passage adopt a low series resistance, low thermal resistance high-power PIN diode as switch element, the ANT-RX passage adopts the middle power P IN diode of two little electric capacity, low series resistance as switch element.The switching circuit of Zhi Zuoing forms two asymmetry channels at ANT-TX and two interchannels of ANT-RX like this, satisfies two passages respectively to requirements such as power, isolation, insertion losses.Two interchannel switching controls are realized by integrated silicon chip for driving.
The preparation method of the super-power radio-frequency switch module of asymmetric is characterized in that this method comprises following processing step:
On the RO4350 of high heat conduction substrate, starch two PIN diode chips of AIN (aluminium nitride) substrate, integrated silicon chip for driving and the ANT-RX passage of bonding super-high heat-conductive performance with silver; On the AIN substrate, starch the high-power PIN diode chip of bonding ANT-TX passage with silver; Between PIN diode chip and the RO4350 substrate, be connected by bonding gold wire between silicon and the RO4350.
The processing step of this method also comprises:
The part of corresponding A IN substrate is beaten intensive via matrix on the RO4350 substrate, on via matrix, starch bonding AIN substrate with silver, is connected by the connection of spun gold (25MIL) bonding between AIN substrate TX end and the circuit board, dispel the heat to intensive via matrix by the AIN substrate, can improve the heat-sinking capability of circuit board, reduce thermal resistance;
On the AIN substrate, starch the high-power PIN diode chip of bonding ANT-TX passage with silver.Be connected by spun gold (25MIL) bonding between chip anode and the circuit board and connect.Use chip rather than packaged diode can reduce the thermal resistance of diode, be beneficial to heat radiation.And the additional properties influence of having avoided encapsulation to bring.
At two PIN diode chips using on the RO4350 substrate on the bonding ANT-RX passage of silver slurry.Be connected by spun gold (25MIL) bonding between chip anode and the circuit board and connect.
On the RO4350 substrate, starch bonding integrated silicon chip for driving with silver.Be connected by spun gold (25MIL) bonding between chip and the circuit board correspondence position and connect.
Ceramic cap is bonded on the circuit board with epoxide-resin glue.
Advantage of the present invention: 1) can in 10.4 * 8.4mm small size, realize switch and drive integrated, and can safe and reliable work under the high-power condition of radio frequency continuous wave 60W;
2) satisfied the requirement of TD-SCDMA and WIMAX system base-station power amplifier super high power switching controls;
3) consider the power amplifier requirement of TD-SCDMA and WIMAX, at by the different requirements with isolation of power, done asymmetric processing at the switch two-way, this asymmetrical design has not only reduced cost, and in the CHANNEL OPTIMIZATION of correspondence different performances, improved the reliability of switch; Improve the integrated level of switch module, reduce cost, optimize performance.The silicon integrated chip substitutes external triode combination drive circuit;
4) owing to adopt multicore sheet assembling (MCM) technology, no matter diode chip for backlight unit still is the silicon integrated drive chips, all adopt the direct bonding processing method of bare chip, thereby reduced the thermal resistance between chip and the substrate, and avoided additive effect that encapsulation brings to Effect on Performance, and optimized the module electrical property, make the reliability of module, the product electrical property all gets a promotion, and has also reduced the use cost of module.
5) adopt the PIN diode chip directly to design and produce, adopt multicore sheet packaging technology (MCM), chip is connected on the circuit by the gold wire bonding mode, eliminated the added influence that encapsulation diode package electric capacity and lead-in inductance are brought to switch designs, further optimized the electrical property of switch, and chip directly is bonded on the circuit board, reduced the thermal resistance between chip and circuit board greatly, more help the conduction of heat than the encapsulation diode, reduce the junction temperature of chip under same power consumption, improved the switch module long-term reliability.
6) adopt high heat conduction AIN ceramic substrate to make the liner plate of diode chip for backlight unit, reduced the thermal resistance between PIN diode chip and application circuit, adopt this design, can make more high power capacity, more reliable power switch.
7) switching circuit of employing series model further reduces module size.Module adopts inner match circuit design, has improved integrated level and applicability.
The high power switch module that The present invention be directed to the machine system of 3G communication standards such as TD-SCDMA and WIMAX and research and develop.Because adopt the common burning technology of advanced multichip modules technology (MCM) and multi-layer ceramics, product has stronger specific aim, on the 3G communications band, have littler loss, more high-isolation, high power capacity more, higher reliability.
Description of drawings
Accompanying drawing 1 is an electrical block diagram of the present invention,
Accompanying drawing 2 is structural representations of one of the present invention's application in the TD-SCDMA base station,
Accompanying drawing 3 is structural representations of two of the application of the present invention in the TD-SCDMA base station,
Accompanying drawing 5 is die bonding figure of the super-power radio-frequency switch module of asymmetric,
Accompanying drawing 6 is contour structure size figure of the super-power radio-frequency switch module of asymmetric,
Accompanying drawing 7 is integrated silicon chip for driving structure and interface schematic diagram,
Embodiment
Contrast accompanying drawing 1, its structure be power supply 1 be+5V is by 75 ohm of current-limiting resistance step-downs, at the anode that is added to PIN1, PIN2 and three diode chip for backlight unit of PIN3 by two inductance respectively.Power supply 2 is+5V that power supply 3 is+28V that this two-way power supply is the power supply of integrated silicon chip for driving.The high-low level of control signal is controlled the output voltage of V1 and V2 respectively.During input high level, chip for driving output is respectively: V1=+28V, and V2=0V (GND), during input low level, integrated silicon chip for driving output is respectively: V1=+0V (GND), V2=+28V.
The operation principle of the super-power radio-frequency switch module of asymmetric is as follows: when the control input low level, and V1=+0V (GND), V2=+28V, PIN1 diode chip for backlight unit positively biased, the conducting of ANT-TX passage, two diode chip for backlight unit of PIN2 and PIN3 are anti-inclined to one side, and the ANT-RX passage ends.When the control input high level, V1=+28V, V2=0V (GND), the PIN1 diode chip for backlight unit is anti-inclined to one side, and the ANT-TX passage ends, two diode chip for backlight unit positively biaseds of PIN2 and PIN3, the conducting of ANT-RX passage.
Contrast accompanying drawing 2, baseband signal is amplified by power amplifier through after encoding, and launches by antenna through behind the circulator again.Received signal enters switch by antenna input through circulator, is amplified into by LNA and receives processing unit processing such as decode.The mode of operation of switch module in this application mode is: during emission state, and the conducting of switch ANT-TX passage, the ANT-RX passage is by isolating.If the antenna end mismatch, power reflection is returned, and enters switch through circulator, injects load end by the ANT-TX passage, can well protect LNA and follow-up receive path part like this.During accepting state, the conducting of ANT-RX passage, received signal enters switch by antenna input through circulator, is amplified into by LNA and receives processing unit processing such as decode.
Contrast accompanying drawing 3, baseband signal is amplified by power amplifier through after encoding, and launches by antenna through behind the switch again, and this moment, switch working state was the ANT-TX conducting, and the ANT-RX passage ends.Received signal, is amplified into by LNA and receives processing unit and decode and wait processing through switch by antenna input, and switch working state is that ANT-TX ends at this moment, the conducting of ANT-RX passage.
Contrast accompanying drawing 5, high-power chip is bonded on the AIN substrate with the silver slurry, and two middle power chips are bonded on the RO4350 substrate circuit plate with the silver slurry.Between diode chip for backlight unit anode and the circuit board, on the AIN substrate between microstrip line and the circuit board microstrip line bonding gold wire be connected.
Embodiment
The electrical schematic diagram of switch module as shown in Figure 1.Substrate is selected the thick RO4350 of 0.5mm for use, carries out the design of pcb board circuit diagram according to the circuit diagram of Fig. 4, and the input and output impedance is all according to 50 ohm of designs, and the width of four sections main microstrip lines is 1mm.The layout of device be connected according to shown in Figure 4, pcb board size 10.4 * 8.4mm, side half hole dimension is 0.6mm, the aperture is 0.2mm in the plate, the plate mesopore is ground hole.The AIN liner plate is of a size of 2 * 2mm, and the chip for driving pad size is 1.2 * 1.2mm.Device is selected: the PIN diode chip is mainly considered from the following aspect on the AIN substrate: oppositely withstand voltage greater than 200V, junction capacitance is less than 0.5P, and series resistance is less than 0.5 ohm, thermal resistance less than 20 degree/watt.Require to select the PIN diode chip according to these.Mainly from oppositely withstand voltage greater than 150V, junction capacitance is less than 0.05P for two other PIN diode chip, and series resistance is less than 0.5 ohm.Require to select the PIN diode chip according to these.Inductance is selected the paster wire-wound inductor for use, and electric capacity gets final product with common patch capacitor.
Integrated silicon chip for driving is of a size of 1.2 * 1.2mm, 7 external interfaces is arranged as shown in Figure 7.The interface of silicon integrated drive chips connects with reference to (the corresponding OP of V1, the corresponding ON of V2 controls corresponding IN, power supply 2 correspondences+5V, power supply 3 correspondences+28V) shown in the accompanying drawing 1.The effect of silicon integrated drive chips is to export relevant voltage according to the high-low level of control signal input at V1 and V2 place, provides biasing to diode chip for backlight unit, thereby reaches the purpose that switch switches.Switch module of the present invention is the power drives pattern, and therefore, integrated silicon chip for driving also has the effect of the electric current of absorption diode chip positively biased conducting.The leading indicator of chip for driving has: chip for driving output voltage :+28/GND.Chip for driving current driving ability: 80mA.The switch reversal rate of chip for driving: less than 100ns.
Bonding and the lead-in wire bonding of integrated silicon chip for driving: die bonding is bonding with the fine and closely woven silver slurry of high heat conduction (as MD140), and at high temperature solidifies; All be connected between the microstrip line section and between PIN diode and the microstrip line by bonding gold wire.Sealing cap: ceramic cap passes through adhering with epoxy resin.
Claims (9)
1, the super-power radio-frequency switch module of asymmetric, it is characterized in that the ANT-TX passage adopts the high-power PIN diode of a low series resistance, low thermal resistance as switch element, the ANT-RX passage adopts the middle power P IN diode of two little electric capacity, low series resistance as switch element, the switching circuit of Zhi Zuoing forms two asymmetry channels at ANT-TX and two interchannels of ANT-RX like this, satisfy two passages respectively to requirements such as power, isolation, insertion losses, two interchannel switching controls are realized by integrated silicon chip for driving.
2, the super-power radio-frequency switch module of asymmetric according to claim 1, it is characterized in that described ANT-TX passage adopts a low series resistance less than 0.5 ohm, thermal resistance less than 20 degree/watt, the PIN diode chip is oppositely withstand voltage greater than 200V, junction capacitance is less than 0.5P; Two PIN diode chips of described ANT-RX passage are oppositely withstand voltage greater than 150V, and junction capacitance is less than 0.05P, and series resistance is less than 0.5 ohm.
3, the super-power radio-frequency switch module of asymmetric according to claim 1 is characterized in that the bonding of described integrated silicon chip for driving and lead-in wire bonding: die bonding is bonding as MD140 with the fine and closely woven silver slurry of high heat conduction, and solidifies under high temperature 150 degree; All be connected between the microstrip line section and between PIN diode and the microstrip line by bonding gold wire.
4, the preparation method of the super-power radio-frequency switch module of asymmetric is characterized in that this method comprises following processing step:
One, on the RO4350 of high heat conduction substrate, starches two PIN diode chips of AIN (aluminium nitride) substrate, integrated silicon chip for driving and the ANT-RX passage of bonding super-high heat-conductive performance with silver;
Two, on the AIN substrate, starch the high-power PIN diode chip of bonding ANT-TX passage with silver;
Three, between PIN diode chip and the RO4350 substrate, be connected by bonding gold wire between integrated silicon chip for driving and the RO4350 substrate.
5, the preparation method of the super-power radio-frequency switch module of asymmetric according to claim 4, it is characterized in that described on the RO4350 substrate part of corresponding A IN substrate beat intensive via matrix, on via matrix, starch bonding AIN substrate with silver, be connected by spun gold 25MIL bonding between AIN substrate TX end and the circuit board, dispel the heat to intensive via matrix by the AIN substrate, can improve the heat-sinking capability of circuit board, reduce thermal resistance.
6, the preparation method of the super-power radio-frequency switch module of asymmetric according to claim 4, it is characterized in that described on the AIN substrate the high-power PIN diode chip with the bonding ANT-TX passage of silver slurry, be connected by spun gold 25MIL bonding between PIN diode chip anode and circuit board.
7, the preparation method of the super-power radio-frequency switch module of asymmetric according to claim 4, it is characterized in that described on the RO4350 substrate with the bonding integrated silicon chip for driving of silver slurry, is connected between integrated silicon chip for driving and the circuit board correspondence position and passes through the connection of spun gold (25MIL) bonding.
8, the preparation method of the super-power radio-frequency switch module of asymmetric according to claim 7 is characterized in that on the described circuit board with epoxide-resin glue bonded ceramics cap.
9, the preparation method of the super-power radio-frequency switch module of asymmetric according to claim 4, it is characterized in that the PIN diode chip is mainly considered from the following aspect on the described AIN substrate: oppositely withstand voltage greater than 200V, junction capacitance is less than 0.5P, series resistance is less than 0.5 ohm, thermal resistance less than 20 degree/watt; Mainly from oppositely withstand voltage greater than 150V, junction capacitance is less than 0.05P for two PIN diode chips of ANT-RX passage in addition, and series resistance is less than 0.5 ohm; Inductance is selected the paster wire-wound inductor for use, and electric capacity gets final product with common patch capacitor, the bonding and lead-in wire bonding of integrated silicon chip for driving: die bonding is with the fine and closely woven silver slurry of high heat conduction, and is bonding as MD140, and solidifies under high temperature 150 degree; All be connected between the microstrip line section and between PIN diode and the microstrip line by bonding gold wire.
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| CN103634021A (en) * | 2013-12-09 | 2014-03-12 | 深圳市双赢伟业科技股份有限公司 | Wireless radiofrequency switching circuit |
| CN105337601A (en) * | 2015-11-04 | 2016-02-17 | 中国北方发动机研究所(天津) | Asymmetric time adjustable soft-start soft-shutdown power switch circuit |
| CN106025450A (en) * | 2016-07-10 | 2016-10-12 | 北京遥感设备研究所 | Ka-band high isolation PIN switch assembly |
| CN106452409A (en) * | 2016-11-14 | 2017-02-22 | 江苏本能科技有限公司 | Radio frequency circuit gating switch |
| CN107483077A (en) * | 2017-09-26 | 2017-12-15 | 天津光电通信技术有限公司 | A kind of high power high-isolation signal transmitting and receiving converter |
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| CN103634021A (en) * | 2013-12-09 | 2014-03-12 | 深圳市双赢伟业科技股份有限公司 | Wireless radiofrequency switching circuit |
| CN105337601B (en) * | 2015-11-04 | 2018-08-07 | 中国北方发动机研究所(天津) | A kind of asymmetric time adjustable soft start, soft switching power switch circuit |
| CN105337601A (en) * | 2015-11-04 | 2016-02-17 | 中国北方发动机研究所(天津) | Asymmetric time adjustable soft-start soft-shutdown power switch circuit |
| CN106025450A (en) * | 2016-07-10 | 2016-10-12 | 北京遥感设备研究所 | Ka-band high isolation PIN switch assembly |
| CN106025450B (en) * | 2016-07-10 | 2019-02-19 | 北京遥感设备研究所 | A kind of Ka wave band high isolation PIN switch block |
| CN106452409A (en) * | 2016-11-14 | 2017-02-22 | 江苏本能科技有限公司 | Radio frequency circuit gating switch |
| CN107483077A (en) * | 2017-09-26 | 2017-12-15 | 天津光电通信技术有限公司 | A kind of high power high-isolation signal transmitting and receiving converter |
| CN107846232A (en) * | 2017-11-20 | 2018-03-27 | 南京国博电子有限公司 | TDD switches, driving and the charging integrated receiving front-end module of low noise and preparation method thereof |
| CN108133869A (en) * | 2017-12-25 | 2018-06-08 | 苏州希美微纳系统有限公司 | Prepare the method and micro electro-mechanical system switch of high-performance radio-frequency micro electro-mechanical system switch |
| CN108063627A (en) * | 2017-12-29 | 2018-05-22 | 苏州威发半导体有限公司 | Radio-frequency receiving-transmitting switchs |
| CN113594137A (en) * | 2021-07-26 | 2021-11-02 | 上海艾为电子技术股份有限公司 | Wafer level packaging structure and packaging method |
| CN114069178A (en) * | 2021-10-25 | 2022-02-18 | 北京理工大学 | Integrated CMOS circulator based on space-time conductivity modulation |
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