CN101656297B - 含有高分子半导体的电子装置 - Google Patents

含有高分子半导体的电子装置 Download PDF

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CN101656297B
CN101656297B CN2009101617671A CN200910161767A CN101656297B CN 101656297 B CN101656297 B CN 101656297B CN 2009101617671 A CN2009101617671 A CN 2009101617671A CN 200910161767 A CN200910161767 A CN 200910161767A CN 101656297 B CN101656297 B CN 101656297B
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CN101656297A (zh
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Y·李
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Xerox Corp
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/08Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
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    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
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    • C08G61/126Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0605Polycondensates containing five-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
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    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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    • C08G2261/322Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3221Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more nitrogen atoms as the only heteroatom, e.g. pyrrole, pyridine or triazole
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    • C08G2261/30Monomer units or repeat units incorporating structural elements in the main chain
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    • C08G2261/3223Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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    • C08G2261/30Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
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    • C08G2261/30Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/324Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
    • C08G2261/3243Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
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    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
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    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CN2009101617671A 2008-08-18 2009-08-14 含有高分子半导体的电子装置 Expired - Fee Related CN101656297B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/193,189 US7928433B2 (en) 2008-08-18 2008-08-18 Electronic device comprising semiconducting polymers
US12/193189 2008-08-18

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CN101656297A CN101656297A (zh) 2010-02-24
CN101656297B true CN101656297B (zh) 2013-09-18

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US (1) US7928433B2 (enrdf_load_stackoverflow)
EP (1) EP2157119B1 (enrdf_load_stackoverflow)
JP (1) JP5106489B2 (enrdf_load_stackoverflow)
KR (1) KR101506350B1 (enrdf_load_stackoverflow)
CN (1) CN101656297B (enrdf_load_stackoverflow)
CA (1) CA2675081C (enrdf_load_stackoverflow)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
US7928181B2 (en) * 2008-08-18 2011-04-19 Xerox Corporation Semiconducting polymers
US8440299B2 (en) * 2010-02-25 2013-05-14 LGS Innovations LLC Composite dielectric material for high-energy-density capacitors
US9214258B2 (en) 2012-12-06 2015-12-15 Xerox Corporation Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers
US9399698B2 (en) 2014-01-31 2016-07-26 Xerox Corporation Processes for purifying diketopyrrolopyrrole copolymers

Citations (1)

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CN1891732A (zh) * 2004-07-08 2007-01-10 三星电子株式会社 含有低聚噻吩和n-型杂芳族单元的有机半导体共聚物

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US3357956A (en) * 1965-03-30 1967-12-12 Du Pont Polymeric 1, 3, 4-thiadiazoles and the process for their preparation
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FR1459375A (fr) 1965-10-20 1966-04-29 Westinghouse Electric Corp Copolymères linéaires oxadiazole-imide
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DE19840195C1 (de) * 1998-09-03 2000-06-15 Fraunhofer Ges Forschung Aromatische Poly(1,3,4-heterodiazole), Verfahren zu ihrer Herstellung und ihre Verwendung in optischen Vorrichtungen, insbesondere Elektrolumineszenzbauelementen
CA2403480A1 (en) * 2000-04-11 2001-10-18 Dupont Displays, Inc. Soluble poly(aryl-oxadiazole) conjugated polymers
JP3892795B2 (ja) * 2002-10-31 2007-03-14 株式会社東芝 ポリイミド光学材料、ポリイミド前駆体溶液、および光導波路素子
JP4066802B2 (ja) * 2002-12-17 2008-03-26 富士ゼロックス株式会社 ポリエステル樹脂及びそれを用いた機能素子、有機電界発光素子、並びに有機電界発光素子の製造方法
US20050146263A1 (en) 2003-09-25 2005-07-07 Kelly Stephen M. Lighting elements, devices and methods
CN101747493B (zh) * 2003-10-28 2014-07-02 西巴特殊化学品控股有限公司 二酮基吡咯并吡咯聚合物
JP2006241267A (ja) * 2005-03-02 2006-09-14 Seiko Epson Corp 導電性材料用組成物、導電性材料、導電層、電子デバイスおよび電子機器
US7758757B2 (en) * 2007-10-19 2010-07-20 E. I. Du Pont De Nemours And Company Method for removing hydrazine compounds
US7928181B2 (en) * 2008-08-18 2011-04-19 Xerox Corporation Semiconducting polymers

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CN1891732A (zh) * 2004-07-08 2007-01-10 三星电子株式会社 含有低聚噻吩和n-型杂芳族单元的有机半导体共聚物

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CN101656297A (zh) 2010-02-24
US7928433B2 (en) 2011-04-19
KR101506350B1 (ko) 2015-03-26
CA2675081C (en) 2018-06-12
EP2157119B1 (en) 2020-03-11
KR20100021978A (ko) 2010-02-26
US20100038631A1 (en) 2010-02-18
JP5106489B2 (ja) 2012-12-26
EP2157119A1 (en) 2010-02-24
CA2675081A1 (en) 2010-02-18
JP2010045367A (ja) 2010-02-25

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