CN101656106A - Method for writing data into EEPROM and device thereof - Google Patents
Method for writing data into EEPROM and device thereof Download PDFInfo
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Abstract
The invention discloses a method for writing data into an EEPROM and a device thereof; the method comprises: writing all data needed to be written into the EEPROM into a RAM; acquiring all the data from the RAM, writing the acquired data into a backup area of the EEPROM for once, and setting effective marker bits corresponding to all the data in the backup area to be effective; respectively writing the data into a target area of the EEPROM; and setting the effective marker bits to be ineffective, and erasing the data stored inside the backup area. The method and the device can ensure the datewriting to be atomicity operation and improves the efficiency for writing the data compared with the prior art.
Description
Technical field
The present invention relates to Erarable Programmable Read only Memory EEPROM application, relate in particular to a kind of method and device that writes data to EEPROM.
Background technology
At present in the application of some EEPROM, importance and susceptibility owing to the data of wherein storing, the EEPROM in the smart card for example, when withholing, writing business service such as Transaction Information, transaction details, it is the atomicity operation that the EEPROM of requirement in smart card writes data, be about to carry out a service needed and write the total data of EEPROM, or all write, or do not write all.And the power supply of smart card depends on external environment condition, and any one step that might write data at the EEPROM in smart card is cut off the power supply, and causes data to write interruption.
The existing data write operation that guarantees is that the method for writing data of atomicity operation is: each blocks of data that writes for needs, respectively each blocks of data is write in the purpose district of EEPROM, specifically the flow process that writes for every blocks of data is, the legacy data of storing in the purpose district with this blocks of data correspondence writes in the backup area of EEPROM earlier, again this blocks of data is write in the corresponding purpose district, after so each blocks of data all being written to the purpose district, again the legacy data in the backup area is wiped.If in the process that data write, cut off the power supply, then, the legacy data in the backup area can be returned in the corresponding purpose district, and wipe legacy data in the backup area in smart card next time during electrification reset, the data that needed to write before having guaranteed all do not write.
Need in EEPROM, write data twice for writing of every blocks of data in the said method, once being that legacy data is write backup area, once is that this blocks of data is write the purpose district, because it is consuming time longer to write data to EEPROM, write for twice and cause writing speed slow, efficient is low.
Summary of the invention
The embodiment of the invention provides a kind of method and device that writes data to EEPROM, when guaranteeing that data are written as the atomicity operation, compared with prior art, improves the efficient that data write.
The embodiment of the invention provides a kind of method that writes data to EEPROM, comprising:
Each blocks of data that needs is write described EEPROM writes in the random access memory ram;
From described RAM, obtain described each blocks of data, in the backup area of the described EEPROM of one-time write, and corresponding all effective marker positions of described each blocks of data in the described backup area are made as effectively;
Described each blocks of data is write respectively in the purpose district of described EEPROM;
It is invalid that described effective marker position is made as, and wipe described each blocks of data of storing in the described backup area.
The embodiment of the invention also provides a kind of device that writes data to EEPROM, comprising:
First writing unit, each blocks of data that is used for needs are write described EEPROM writes random access memory ram;
Second writing unit is used for obtaining described each blocks of data from described RAM, in the backup area of the described EEPROM of one-time write, and corresponding all effective marker positions of described each blocks of data in the described backup area is made as effectively;
The 3rd writing unit is used for described each blocks of data is write respectively the purpose district of described EEPROM;
Erase unit, it is invalid to be used for described effective marker position is made as, and wipes described each blocks of data of storing in the described backup area.
In the embodiment of the invention, each blocks of data that at first needs is write EEPROM writes in the random access memory ram; From RAM, obtain each blocks of data again, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of described each blocks of data in the backup area are made as effectively; And each blocks of data is write respectively in the purpose district of EEPROM; And this effective marker position is made as invalid, wipe each blocks of data of storing in the backup area.The method that adopts the embodiment of the invention to provide, if in the process that above-mentioned data write, cut off the power supply, then when this EEPROM place device electrification reset next time, if this effective marker position is invalid, can not return in the purpose district even if then stored partial data in the backup area yet, guarantee that each blocks of data does not all write; If this effective marker position is effectively, then each blocks of data in the backup area can be write respectively in the purpose district, guarantee that each blocks of data all writes.And because before each blocks of data is write backup area, each blocks of data is written among the RAM, so each blocks of data can be write in the backup area as monoblock data are disposable, reduced the number of times that data is write backup area compared to existing technology, again since to EEPROM write data number of times how much be the deciding factor that writes the speed of data to EEPROM, therefore, reduce the number of times that writes data, promptly improved the efficient that data write.
Description of drawings
Fig. 1 writes the process flow diagram of data for what provide in the embodiment of the invention to EEPROM;
Fig. 2 is in the embodiment of the invention writing each blocks of data the process flow diagram of RAM;
The structural representation that Fig. 3 stores in RAM for each blocks of data in the embodiment of the invention;
Fig. 4 is the process flow diagram that data are recovered during the smart card electrification reset in the embodiment of the invention;
Fig. 5 writes the structural representation of the device of data for what provide in the embodiment of the invention to EEPROM.
Embodiment
The embodiment of the invention provides a kind of method that writes data to EEPROM, as shown in Figure 1, comprising:
Step S101, each blocks of data that needs are write EEPROM write among the RAM.
Step S102, from RAM, obtain each blocks of data, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of described each blocks of data in the backup area are made as effectively.
Step S103, each blocks of data is write respectively in the purpose district of EEPROM.
Step S104, this effective marker position is made as invalid, and wipes each blocks of data of storing in the backup area.
Below in conjunction with accompanying drawing, write data instance (this method is equally applicable to write data to the EEPROM of other devices) with the EEPROM in smart card, method provided by the invention and device are described in detail.
Figure 2 shows that the process flow diagram among the RAM that among the above-mentioned steps S101 each blocks of data is write smart card, specifically comprise:
Step S201, obtain the address in the EEPROM purpose district of the first blocks of data correspondence, the length and the first blocks of data content of first blocks of data.
The length of this blocks of data that step S202, basis are obtained judges whether the storage space among the current RAM enough is used to store this blocks of data, if enough, then enters step S204; Otherwise, enter step S203.
Step S203, send data write error mistake prompting.Further, this prompting can be pointed out for memory space inadequate, is used for the reminder-data write error, and error reason is a memory space inadequate among the RAM.
Step S204, this blocks of data that will obtain write RAM.Concrete when writing this blocks of data among the RAM, guarantee that the address and the preceding address of once storing this blocks of data of this blocks of data of storage among the RAM is continuous, guaranteeing follow-uply each blocks of data can be regarded as a monoblock, disposablely obtain and write in the backup area.
Whether step S205, the last data that write RAM of judgement are last blocks of data, if not, then enter step S206; Otherwise, enter step S207.
Step S206, obtain the address in the EEPROM purpose district of next blocks of data correspondence, length and next blocks of data content of next blocks of data, enter above-mentioned steps S202 then.
Step S207, flow process finish; Perhaps
The value of correspondence when effective also with the effective marker position of corresponding all described each blocks of data in the backup area, write among the RAM, purpose be can be in the follow-up backup area that each blocks of data is write EEPROM in, also with this effective marker position when effective the value of correspondence write its correspondence position, to reduce the number of times that writes data to EEPROM, raise the efficiency.
Preferable, this step can also comprise and calculating and whole described each blocks of data corresponding check values, and the proof test value that calculates is write among the RAM, is used to guarantee the correctness of data.
In the embodiment of the invention, the RAM in the above-mentioned flow process shown in Figure 2 can be external random access memory XRAM.
By above-mentioned flow process shown in Figure 2, each blocks of data is write among the RAM, the structure that each blocks of data is stored in RAM can be as shown in Figure 3, so, each blocks of data that store among the RAM this moment can be regarded monoblock data as, then among the above-mentioned steps S102, can from RAM, obtain these monoblock data, in the backup area of one-time write EEPROM, and the effective marker position of corresponding these monoblock data in the backup area is made as effectively, promptly be equivalent to the effective marker position value of correspondence when effective and write its correspondence position in the backup area.
Preferable, in order to reduce the number of times that writes data to EEPROM, among the above-mentioned steps S207 also with the effective marker position when effective the value of correspondence write among the RAM, then among the above-mentioned steps S102, corresponding value is regarded monoblock data as when can be with each blocks of data and effective marker position effective, together in the one-time write backup area, at this moment, need satisfy the writing of value of effective marker position correspondence when effective, after the writing of each blocks of data.For satisfying this requirement, be to write if in backup area, write data by address order from low to high, then the address of effective marker position is higher than the address of storing each blocks of data in the backup area; If write data in backup area is to write by address order from high to low, and then the address of effective marker position is lower than the address of storing each blocks of data in the backup area.
Preferable, can also be for guaranteeing the correctness of data, also calculate among the above-mentioned steps S207 and whole described each blocks of data corresponding check value, and the proof test value that calculates write among the RAM, then in the above-mentioned steps 102, the value of correspondence is regarded monoblock data as when can be with each blocks of data, the proof test value that calculates and effective marker position effective, together in the one-time write backup area, at this moment, also need to satisfy the effective marker position when effective the value of correspondence write at last.
After writing each blocks of data in the backup area, among the above-mentioned steps S103, each blocks of data is write respectively in the purpose district of EEPROM.Because, each blocks of data corresponding address stored in the purpose district is discontinuous, so, can only write every blocks of data respectively, specifically be according to the length of the address in the purpose district of this blocks of data correspondence and this blocks of data, this blocks of data content is written in the purpose district.When before every blocks of data writes, obtaining this blocks of data,, therefore, can from RAM, obtain, also can from backup area, obtain owing to all store each blocks of data among the RAM and in the backup area.
After in the purpose district that each blocks of data is write EEPROM respectively by above-mentioned steps S103, promptly finished writing of whole described each blocks of data, it is invalid then to need the effective marker position in the backup area is made as, promptly wipe the value of effective marker position correspondence when effective from correspondence position, avoid when smart card electrification reset next time, according to the effective restore data from backup area in effective marker position, and wipe each blocks of data of storing in the backup area.So far, finished the process that in EEPROM, writes data.
But in order to guarantee that data are written as atomicity operation, also need carry out Data Recovery Process when the each electrification reset of smart card, the process flow diagram of data recovery when Figure 4 shows that smart card electrification reset in the embodiment of the invention comprises:
Step S401, smart card electrification reset begin.
Step S402, judge whether the effective marker position effective, if interruption took place last time in expression when EEPROM writes data, do not finish writing of total data normally, need be from backup area restore data, then enter step S403; Otherwise, enter step S406.
Step S403, calculate and whole described each blocks of data corresponding check values, and with backup area in the proof test value stored more whether equate, if equal, then enter step S404; Otherwise, enter step S406.
Step S404, from backup area, obtain each blocks of data, write respectively in the purpose district of EEPROM.Specifically be length, the content of this blocks of data is written in the purpose district according to the address in the purpose district of every blocks of data correspondence and this blocks of data.
Step S405, by above-mentioned steps S404, each blocks of data of storing in the backup area all is written in the purpose district, it is invalid that the effective marker position is made as, and promptly clashes the value of effective marker position correspondence when effective from correspondence position, avoids when smart card electrification reset next time restore data once more.
Step S406, wipe each blocks of data of storing in the backup area.
By above-mentioned flow process shown in Figure 4, do not finish writing of total data when last secondary data writes owing to take place to interrupt fashionable, can finish writing of total data by restore data from backup area, restore data when passing through electrification reset in the prior art, what recover is the legacy data of storage, and in the embodiment of the invention, essence is that the needs that will store in the backup area write the purpose district, and also do not write the new data in purpose district, continue to write in the purpose district.
According to the description of said method flow process as can be known, the method that the embodiment of the invention provides, can finishing EEPROM in smart card, to write data be the atomicity operation, and compared to existing technology, writing of a total data is fashionable finishing, reduce the number of times that writes data to EEPROM, therefore, improved the efficient that data write.
Based on same inventive concept, a kind ofly write the method for data to EEPROM according to what the above embodiment of the present invention provided, correspondingly, another embodiment of the present invention also provides a kind of device that writes data to EEPROM, its structural representation specifically comprises as shown in Figure 5;
The 3rd writing unit 503 is used for each blocks of data is write respectively the purpose district of EEPROM;
Erase unit 504, it is invalid to be used for the effective marker position is made as, and wipes each blocks of data of storing in the backup area.
Preferable, above-mentioned first writing unit 501 is used for also with the effective marker position that the value of correspondence writes RAM when effective;
Above-mentioned second writing unit 502 specifically is used for obtaining from RAM the value of each blocks of data and effective marker position correspondence when effective, in the backup area of one-time write EEPROM; The value of correspondence was written in after the writing of each blocks of data when wherein, the effective marker position was effective.
Preferable, said apparatus also comprises:
Mistake indicating member 505 is used in the process that each blocks of data is write RAM, if the insufficient memory among the RAM then sends the prompting of data write error mistake.
Preferable, above-mentioned second writing unit 502 also is used for when each blocks of data is write the backup area of EEPROM, will write backup area with each blocks of data corresponding check value.
Preferable, RAM is external random access memory XRAM.
In sum, the scheme that the embodiment of the invention provides comprises: each blocks of data that needs is write EEPROM writes among the RAM; And from RAM, obtain each blocks of data, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of described each blocks of data in the backup area are made as effectively; And each blocks of data is write respectively in the purpose district of EEPROM; And this effective marker position is made as invalid, and wipe each blocks of data of storing in the backup area.The scheme that adopts the embodiment of the invention to provide when guaranteeing that data are written as the atomicity operation, compared with prior art, has improved the efficient that data write.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1, a kind ofly write the method for data, it is characterized in that, comprising to EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM:
Each blocks of data that needs is write described EEPROM writes in the random access memory ram;
From described RAM, obtain described each blocks of data, in the backup area of the described EEPROM of one-time write, and corresponding all effective marker positions of described each blocks of data in the described backup area are made as effectively;
Described each blocks of data is write respectively in the purpose district of described EEPROM;
It is invalid that described effective marker position is made as, and wipe described each blocks of data of storing in the described backup area.
2, the method for claim 1 is characterized in that, also comprises:
The value of correspondence writes among the described RAM when effective with described effective marker position;
Describedly from described RAM, obtain described each blocks of data, in the backup area of the described EEPROM of one-time write, and the effective marker position of corresponding described each blocks of data of described backup area be made as effectively, be specially:
From described RAM, obtain the value of described each blocks of data and described effective marker position correspondence when effective, in the backup area of the described EEPROM of one-time write; The value of correspondence was written in after the writing of described each blocks of data when wherein, described effective marker position was effective.
3, the method for claim 1 is characterized in that, also comprises:
Described each blocks of data is being write in the process of described RAM, if the insufficient memory among the described RAM then sends the prompting of data write error mistake.
4, the method for claim 1 is characterized in that, also comprises:
When described each blocks of data is write the backup area of described EEPROM, also will write described backup area with described each blocks of data corresponding check value.
As the arbitrary described method of claim 1-4, it is characterized in that 5, described RAM is external random access memory XRAM.
6, a kind ofly write the device of data, it is characterized in that, comprising to EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM:
First writing unit, each blocks of data that is used for needs are write described EEPROM writes random access memory ram;
Second writing unit is used for obtaining described each blocks of data from described RAM, in the backup area of the described EEPROM of one-time write, and corresponding all effective marker positions of described each blocks of data in the described backup area is made as effectively;
The 3rd writing unit is used for described each blocks of data is write respectively the purpose district of described EEPROM;
Erase unit, it is invalid to be used for described effective marker position is made as, and wipes described each blocks of data of storing in the described backup area.
7, device as claimed in claim 6 is characterized in that, described first writing unit is used for also with described effective marker position that the value of correspondence writes described RAM when effective;
Described second writing unit specifically is used for obtaining from described RAM the value of described each blocks of data and described effective marker position correspondence when effective, in the backup area of the described EEPROM of one-time write; The value of correspondence was written in after the writing of described each blocks of data when wherein, described effective marker position was effective.
8, device as claimed in claim 6 is characterized in that, also comprises:
The mistake indicating member is used in the process that described each blocks of data is write described RAM, if the insufficient memory among the described RAM then sends the prompting of data write error mistake.
9, device as claimed in claim 6 is characterized in that, described second writing unit also is used for when described each blocks of data is write the backup area of described EEPROM, will write described backup area with described each blocks of data corresponding check value.
As the arbitrary described device of claim 6-9, it is characterized in that 10, described RAM is external random access memory XRAM.
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| CN109240622A (en) * | 2018-09-26 | 2019-01-18 | 潍柴动力股份有限公司 | A kind of method and system of EEPROM data write-in |
| CN112181728A (en) * | 2020-09-29 | 2021-01-05 | 山东华翼微电子技术股份有限公司 | High-security CPU smart card chip data power-down prevention processing method |
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