CN101656043B - Pixel circuit, active matrix organic light-emitting diode display and drive method thereof - Google Patents
Pixel circuit, active matrix organic light-emitting diode display and drive method thereof Download PDFInfo
- Publication number
- CN101656043B CN101656043B CN2009101619291A CN200910161929A CN101656043B CN 101656043 B CN101656043 B CN 101656043B CN 2009101619291 A CN2009101619291 A CN 2009101619291A CN 200910161929 A CN200910161929 A CN 200910161929A CN 101656043 B CN101656043 B CN 101656043B
- Authority
- CN
- China
- Prior art keywords
- switching transistor
- electrically coupled
- source
- drain electrode
- storage capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The present invention provides a pixel circuit, an active matrix organic light-emitting diode display and a drive method, wherein the pixel circuit includes an organic light-emitting diode, a storage capacitance, a drive transistor and first to fourth switch transistors. The drive transistor is used to generate a pixel current based on a quantity of electric charge stored in the storage capacitance so as to drive the organic light-emitting diode to generate a corresponding brightness; turn-on/off states of the first to fourth switch transistors are controlled by an identical scanning signal, by means of electrical coupling relations of the first to fourth switch transistors, the pixel current and power supply voltage across the organic light-emitting diode are independent of a critical voltage of the drive transistor and an increase of straddling voltage of the organic light-emitting diode is improved along with an operation of the organic light-emitting diode for a long time. The invention also provides the active matrix organic light-emitting diode display employing the pixel circuit and the drive method for the pixel circuit.
Description
Technical field
The invention relates to a kind of Organic Light Emitting Diode display technique field, and particularly relevant for a kind of image element circuit, active matrix organic LED display and driving method.
Background technology
(Organic Light Emitting Diode, OLED) pixel of display is generally come store charge with transistor collocation storage capacitors to active matrix organic LED, with the brightness performance of control Organic Light Emitting Diode.See also Fig. 1, it is the synoptic diagram of conventional pixel circuit.Image element circuit 200 comprises P type driving transistors 202, N type switching transistor 204, storage capacitors Cst and Organic Light Emitting Diode 210.The source S of driving transistors 202 is electrically coupled to supply voltage OVDD; The grid G of switching transistor 204 receives sweep signal SCAN because of the electric property coupling relation, and drain D receives data voltage Vdata because of the electric property coupling relation, and source S is electrically coupled to the grid of driving transistors 202; The two ends cross-over connection of storage capacitors Cst is between the grid G of driving transistors 202 and source S, and its electric capacity cross-pressure is denoted as V
SgThe anode of Organic Light Emitting Diode 210 is electrically coupled to the drain D of driving transistors 202, and negative electrode is electrically coupled to another supply voltage OVSS.Aforementioned dot structure is by electric capacity cross-pressure V
SgThe size of current of driving transistors 202 is flow through in control, promptly flows through the pixel current I of Organic Light Emitting Diode 210
Oled=K* (V
Sg-V
TH)
2Wherein, K is a constant, V
SgSize be relevant to the size of supply voltage OVDD and data voltage Vdata, V
THCritical voltage for driving transistors 202.
Because the supply voltage OVDD on the active matrix organic LED display is connected together between each pixel, when driving Organic Light Emitting Diode 210 when shinny, the online electric current that has of supply voltage OVDD metal flows through, and have an impedance because OVDD metal own is online, (IR-drop) existence is fallen so have supply voltage, make that the supply voltage OVDD of each pixel can be variant, cause and have pixel current I between pixel and the pixel
OledDifference, different its brightness that produced of electric current of flowing through OLED will be different, and it is inhomogeneous to cause panel to show.In addition, since the influence of manufacturing process, the critical voltage V of the driving transistors 202 of each pixel
THAll inequality, even cause giving identical data voltage Vdata, the pixel current that it produced still can be variant, and it is inhomogeneous to cause panel to show.In addition, Organic Light Emitting Diode 210 can produce the material attenuation problem so that the cross-pressure of Organic Light Emitting Diode 210 rises along with increasing service time, so just can cause pixel current I
OledDescend, and then cause the whole display brightness of panel to descend.
Summary of the invention
One of purpose of the present invention is providing a kind of image element circuit exactly, to improve the material attenuation problem that panel shows uneven problem and Organic Light Emitting Diode.
A further object of the present invention provides a kind of active matrix organic LED display, to improve the material attenuation problem that panel shows uneven problem and Organic Light Emitting Diode.
Another purpose of the present invention provides a kind of driving method of image element circuit, to improve the material attenuation problem that panel shows uneven problem and Organic Light Emitting Diode.
A kind of image element circuit that one embodiment of the invention proposes, it comprises: Organic Light Emitting Diode, storage capacitors, driving transistors, first switching transistor, second switch transistor, the 3rd switching transistor and the 4th switching transistor.Wherein, storage capacitors comprises first end and second end; Driving transistors is shinny in order to drive Organic Light Emitting Diode, and its first source/drain electrode is electrically coupled to first end of storage capacitors, and second source/drain electrode is electrically coupled to Organic Light Emitting Diode; The grid of first switching transistor receives sweep signal because of the electric property coupling relation, and its first source/drain electrode is electrically coupled to predeterminated voltage, and second source/drain electrode is electrically coupled to first end of storage capacitors; The transistorized grid of second switch receives aforementioned sweep signal because of the electric property coupling relation, and its first source/drain electrode is electrically coupled to second end of storage capacitors, and second source/drain electrode is electrically coupled to the grid of driving transistors; The grid of the 3rd switching transistor receives aforementioned sweep signal because of the electric property coupling relation, and its first source/drain electrode is electrically coupled to second source/drain electrode of driving transistors, and second source/drain electrode is electrically coupled to the grid of driving transistors; The grid of the 4th switching transistor receives aforementioned sweep signal because of electric property coupling closes, and its first source/drain electrode is electrically coupled to second end of storage capacitors, and second source/drain electrode receives data voltage because of the electric property coupling relation.
In one embodiment of this invention, the conduction and cut-off opposite states of the transistorized conduction and cut-off state of aforesaid first switching transistor and second switch and the 3rd switching transistor and the 4th switching transistor.Further, first switching transistor and second switch transistor can be the P transistor npn npn, and the 3rd switching transistor and the 4th switching transistor can be the N transistor npn npn.
A kind of active matrix organic LED display that yet another embodiment of the invention proposes, it comprises: data drive circuit, scan drive circuit and at least one pixel.Wherein, pixel comprises: Organic Light Emitting Diode, storage capacitors, driving transistors, first switching transistor, second switch transistor, the 3rd switching transistor and the 4th switching transistor.Storage capacitors comprises first end and second end; Driving transistors is shinny in order to drive Organic Light Emitting Diode, and its first source/drain electrode is electrically coupled to first end of storage capacitors, and second source/drain electrode is electrically coupled to Organic Light Emitting Diode; The grid of first switching transistor sees through sweep trace and is electrically coupled to scan drive circuit, and first source/drain electrode is electrically coupled to predeterminated voltage, and second source/drain electrode is electrically coupled to first end of storage capacitors; The transistorized grid of second switch sees through aforementioned sweep trace and is electrically coupled to scan drive circuit, and first source/drain electrode is electrically coupled to second end of storage capacitors, and second source/drain electrode is electrically coupled to the grid of driving transistors; The grid of the 3rd switching transistor sees through aforementioned sweep trace and is electrically coupled to scan drive circuit, and first source/drain electrode is electrically coupled to second source/drain electrode of driving transistors, and second source/drain electrode is electrically coupled to the grid of driving transistors; The grid of the 4th switching transistor sees through aforementioned sweep trace and is electrically coupled to scan drive circuit, and first source/drain electrode is electrically coupled to second end of storage capacitors, and second source/drain electrode sees through data line and is electrically coupled to data drive circuit.Moreover the grid cut-in voltage of the transistorized grid cut-in voltage of first switching transistor and second switch and the 3rd switching transistor and the 4th switching transistor is anti-phase each other.Further, first switching transistor and second switch transistor can be the P transistor npn npn, and the 3rd switching transistor and the 4th switching transistor can be the N transistor npn npn.
Further embodiment of this invention proposes a kind of driving method of image element circuit, and this image element circuit includes OLED, storage capacitors and driving transistors; Driving transistors is shinny in order to drive Organic Light Emitting Diode, and its first source/drain electrode is electrically coupled to first end of storage capacitors, and second source/drain electrode is electrically coupled to Organic Light Emitting Diode.Wherein, driving method comprises step: first end of predeterminated voltage to storage capacitors is provided, and second end of storage capacitors is communicated with the grid of driving transistors; Second end of data voltage to storage capacitors is provided, and make first end of storage capacitors see through driving transistors and Organic Light Emitting Diode be discharged to the conducting electric current of Organic Light Emitting Diode almost nil till so that storage capacitors has a quantity of electric charge; And provide again predeterminated voltage to storage capacitors first end and second end of storage capacitors is communicated with the grid of driving transistors to drive Organic Light Emitting Diode shinny so that driving transistors produces pixel current according to the quantity of electric charge on the storage capacitors.
In one embodiment of this invention, when pixel more comprises first switching transistor and second switch transistor, and first source/drain electrode of first switching transistor is electrically coupled to predeterminated voltage, second source/drain electrode of first switching transistor is electrically coupled to first end of storage capacitors, the transistorized first source/drain electrode of second switch is electrically coupled to second end of storage capacitors, when the transistorized second source/drain electrode of second switch is electrically coupled to the grid of driving transistors, aforementionedly provide first end of predeterminated voltage, and second end of storage capacitors is comprised with the step that the grid of driving transistors communicates: conducting first switching transistor and second switch transistor to storage capacitors.
In one embodiment of this invention, when pixel more comprises the 3rd switching transistor and the 4th switching transistor, and first source/drain electrode of the 3rd switching transistor is electrically coupled to second source/drain electrode of driving transistors, second source/drain electrode of the 3rd switching transistor is electrically coupled to the grid of driving transistors, first source/drain electrode of the 4th switching transistor is electrically coupled to second end of storage capacitors, second source of the 4th switching transistor/when drain electrode is electrically coupled to data voltage, aforementioned second end of data voltage that provide to storage capacitors, and first end that makes storage capacitors see through driving transistors and Organic Light Emitting Diode be discharged to the conducting electric current of Organic Light Emitting Diode almost nil till, so that having the step of the quantity of electric charge, storage capacitors comprises: by first switching transistor and second switch transistor, and conducting the 3rd switching transistor and the 4th switching transistor.Further, aforementionedly provide first end of predeterminated voltage, and the step that second end of storage capacitors is communicated with the grid of driving transistors can comprise more: by the 3rd switching transistor and the 4th switching transistor to storage capacitors.
In one embodiment of this invention, the conduction and cut-off state of aforesaid first switching transistor, second switch transistor, the 3rd switching transistor and the 4th switching transistor is determined by same control signal.
In one embodiment of this invention, aforementioned provide again predeterminated voltage to storage capacitors first end and second end of storage capacitors is communicated with the grid of driving transistors, so that driving transistors comprises according to the step that the quantity of electric charge on the storage capacitors produces pixel current driving Organic Light Emitting Diode: conducting first switching transistor and second switch transistor, and by the 3rd switching transistor and the 4th switching transistor.
The embodiment of the invention designs by the circuit structure to pixel, can make the size of the pixel current that flows through Organic Light Emitting Diode be relevant to the cross-pressure of data voltage and Organic Light Emitting Diode, and irrelevant with the critical voltage of predeterminated voltage and driving transistors.Therefore, the driving method of image element circuit, active matrix organic LED display and image element circuit that the embodiment of the invention proposes can effectively improve the material attenuation problem that panel shows uneven problem and Organic Light Emitting Diode, so that high-quality display frame to be provided, and then reach purpose of the present invention.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 shows the synoptic diagram of conventional pixel circuit.
Fig. 2 shows the active matrix organic LED display that is relevant to the embodiment of the invention.
Fig. 3 shows the sequential chart of the driving method of the image element circuit that is relevant to the embodiment of the invention.
Drawing reference numeral:
200: image element circuit
202:P type driving transistors
204:N type switching transistor
210: Organic Light Emitting Diode
Cst: storage capacitors
G: grid
D: drain electrode
S: source electrode
V
Sg: the electric capacity cross-pressure
SCAN: sweep signal
Vdata: data voltage
I
Oled: pixel current
OVDD, OVSS: supply voltage
100: active matrix organic LED display
102: data drive circuit
103: data line
104: scan drive circuit
105: sweep trace
110: Organic Light Emitting Diode
M1: driving transistors
M2～M5: switching transistor
V
S1g1: the electric capacity cross-pressure
G1～G5: grid
D1～D5: drain electrode
S1～S5: source electrode
S1: phase one
S2: subordinate phase
S3: phase III
L: low-voltage position standard
H: high voltage level
Embodiment
Referring to Fig. 2, it shows a kind of active matrix organic LED display that is relevant to the embodiment of the invention.Active matrix organic LED display 100 comprises data drive circuit 102, scan drive circuit 104 and a plurality of image element circuit P, an image element circuit P only is shown as an example among Fig. 2, but is not to be used for limiting the present invention.As shown in Figure 2, data drive circuit 102 is in order to provide data voltage Vdata, and scan drive circuit 104 is in order to provide sweep signal SCAN; Image element circuit P comprises storage capacitors Cst, driving transistors M1, switching transistor M2～M5 and Organic Light Emitting Diode 110.Driving transistors M1 is shinny in order to drive Organic Light Emitting Diode 110, the source S 1 of driving transistors M1 is electrically coupled to the A end of storage capacitors Cst, the drain D 1 of driving transistors M1 is electrically coupled to the anode of Organic Light Emitting Diode 110, and the negative electrode of Organic Light Emitting Diode 110 is electrically coupled to supply voltage OVSS.The grid G 2 of switching transistor M2 is electrically coupled to sweep trace 105 and (only illustrates one among Fig. 2 as an example, but be not to be used for limiting the present invention) receive sweep signal SCAN to see through sweep trace 105 from scan drive circuit 104, the source S 2 of switching transistor M2 is electrically coupled to another supply voltage OVDD, and the drain D 2 of switching transistor M2 is electrically coupled to the A end of storage capacitors Cst.The grid G 3 of switching transistor M3 is electrically coupled to sweep trace 105 and receives sweep signal SCAN to see through sweep trace 105 from scan drive circuit 104, the source S 3 of switching transistor M3 is electrically coupled to the B end of storage capacitors Cst, and the drain D 3 of switching transistor M3 is electrically coupled to the grid G 1 of driving transistors M1.The grid G 4 of switching transistor M4 is electrically coupled to sweep trace 105 and receives sweep signal SCAN to see through sweep trace 105 from scan drive circuit 104, the source S 4 of switching transistor M4 is electrically coupled to the drain D 1 of driving transistors M1, and the drain D 4 of switching transistor M4 is electrically coupled to the grid G 1 of driving transistors M1.The grid G 5 of switching transistor M5 is electrically coupled to sweep trace 105 and receives sweep signal SCAN to see through sweep trace 105 from scan drive circuit 104, the source S 5 of switching transistor M5 is electrically coupled to the B end of storage capacitors, the drain D 5 of switching transistor M5 is electrically coupled to data line 103 (only illustrate among Fig. 2 as an example, but be not to be used for limiting the present invention) and receives data voltage Vdata to see through data line 103 from data drive circuit 102.In addition, the grid cut-in voltage of switching transistor M2 and M3 (Gate-On Voltage) is anti-phase each other with the grid cut-in voltage of switching transistor M4 and M5, and for example switching transistor M2 and M3 are the P transistor npn npn, and switching transistor M4 and M5 are the N transistor npn npn; Correspondingly, the conduction and cut-off opposite states of the conduction and cut-off state of switching transistor M2 and M3 and switching transistor M4 and M5.
Describe the driving method of the image element circuit of active matrix organic LED display 100 in detail below in conjunction with Fig. 2 and Fig. 3, wherein Fig. 3 shows the sequential chart of the driving method of the pixel P that is relevant to the embodiment of the invention, can learn that from Fig. 3 the process that drives pixel P comprises phase one S1, subordinate phase S2 and phase III S3.
Particularly, in the phase one S1 of the driving method of pixel P, the sweep signal SCAN that scan drive circuit 104 provides is the accurate L in low-voltage position, makes switching transistor M2 and M3 conducting and switching transistor M4 and M5 be in cut-off state.Thus, it is OVDD that the switching transistor M2 that supply voltage OVDD just sees through conducting makes the voltage level of the A end of storage capacitors Cst, and the A end of storage capacitors Cst communicates with the grid G 1 of driving transistors M1 because of switching transistor M3 conducting.
Then in subordinate phase S2, the voltage level of the sweep signal SCAN that scan drive circuit 104 provides changes the high voltage level H that switching transistor M2 and M3 are ended into, this moment switching transistor M4 and M5 conducting.So, the A end of storage capacitors Cst just sees through source-drain electrodes S1-D1 and 110 pairs of supply voltage OVSS discharges of Organic Light Emitting Diode of driving transistors M1, till the conducting electric current of Organic Light Emitting Diode was almost nil, this moment, the anode of Organic Light Emitting Diode 110 had a voltage level V
Oled(that is, the cross-pressure of Organic Light Emitting Diode 110 and supply voltage OVSS and) makes that the voltage level of A end of storage capacitors Cst is (V
Oled+ V
TH); V wherein
THCritical voltage for driving transistors M1.This voltage level V
OledCan change along with the material attenuation characteristic of Organic Light Emitting Diode 210, promptly 110 running times of Organic Light Emitting Diode of a specified duration more, its voltage level V
OledCan be high more.Return on the circuit, it is Vdata that the switching transistor M5 that this moment, the data voltage Vdata that provides of data drive circuit 102 saw through conducting makes the voltage level of the B end of storage capacitors Cst, so that store the quantity of electric charge (V on the storage capacitors Cst
Oled+ V
TH-Vdata).
In phase III S3, the voltage level of the sweep signal SCAN that scan drive circuit 104 provides changes the accurate L in low-voltage position that makes switching transistor M2 and M3 conducting into then, and this moment, switching transistor M4 and M5 ended.Thus, driving transistors M1 can (be electric capacity cross-pressure V according to the quantity of electric charge on this moment storage capacitors Cst just
S1g1) generation pixel current I
OledDrive Organic Light Emitting Diode 110 and produce corresponding brightness.At this moment, the B end of storage capacitors Cst communicates with the grid G 1 of driving transistors M1 because of switching transistor M3 conducting, the switching transistor M2 that supply voltage OVDD sees through conducting once more provides to the A end of storage capacitors Cst and makes the voltage level of A end of storage capacitors Cst change into OVDD, and because of the continuous characteristic of electric capacity both end voltage, the voltage level of the B of storage capacitors Cst end also with increase voltage Δ V.This voltage Δ V equals the voltage level of A end from (V
Oled+ V
TH) change to the variable quantity of OVDD, i.e. Δ V=OVDD-V
Oled-V
THSo the voltage level of the B end of storage capacitors Cst finally can be changed into (Vdata+ Δ V), i.e. (Vdata+OVDD-V
Oled-V
TH).
Hold above-mentionedly, flow through the pixel current I of Organic Light Emitting Diode 110
Oled=K* (V
S1g1-V
TH)
2, the voltage level of grid G 1 is the voltage level (Vdata+OVDD-V of B end
Oled-V
TH), and the voltage level of source S 1 is the voltage level OVDD of A end, so pixel current
I
oled＝K*[(OVDD-Vdata-OVDD+V
oled+V
TH)-V
TH]
2
＝K*(V
oled-Vdata)
2。So far can learn, in phase III S3 (that is demonstration stage), flow through the pixel current I of Organic Light Emitting Diode 110
OledSize only with voltage level V
OledAnd data voltage Vdata is relevant, and with critical voltage V
THAnd supply voltage OVDD is irrelevant; And the voltage quasi position V on the anode of Organic Light Emitting Diode 110
OledBecause of 110 running times of Organic Light Emitting Diode increase when rising, can improve pixel current I
OledWith the brightness decline situation of compensation when Organic Light Emitting Diode 110.Thus, the material attenuation problem of Organic Light Emitting Diode and because of supply voltage falls (IR-drop) influence and manufacturing process shows that to the panel that the influence of the critical voltage of driving transistors M1 causes uneven problem can effectively be improved, thus make active matrix organic LED display 100 long-time uses down still can keep good display quality.
In sum, the embodiment of the invention designs by the circuit structure to pixel, can make the size of the pixel current that flows through Organic Light Emitting Diode be relevant to the cross-pressure of data voltage and Organic Light Emitting Diode, and irrelevant with the critical voltage of predeterminated voltage and driving transistors.Therefore, the driving method of image element circuit, active matrix organic LED display and image element circuit that the embodiment of the invention proposes can effectively improve the material attenuation problem that panel shows uneven problem and Organic Light Emitting Diode, so that high-quality display frame to be provided, and then reach purpose of the present invention.
In addition, anyly be familiar with active-matrix light emitting diode indicator that this operator also can propose the above embodiment of the present invention and the driving method of image element circuit is done suitably change, for example suitably change the pixel quantity, each transistorized kind (P type or N type) of circuit structure, the active matrix organic LED display of image element circuit, electrical connection exchange of each transistorized source electrode and drain electrode or the like.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (8)
1. an image element circuit is characterized in that, described image element circuit comprises:
One Organic Light Emitting Diode;
One storage capacitors comprises one first end and one second end;
One driving transistors, shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to described first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode;
One first switching transistor, the grid of described first switching transistor receives the one scan signal because of the electric property coupling relation, first source/drain electrode of described first switching transistor is electrically coupled to a predeterminated voltage, and second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors;
One second switch transistor, the transistorized grid of described second switch receives described sweep signal because of the electric property coupling relation, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, and the transistorized second source/drain electrode of described second switch is electrically coupled to the grid of described driving transistors;
One the 3rd switching transistor, the grid of described the 3rd switching transistor receives described sweep signal because of the electric property coupling relation, first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, and second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors; And
One the 4th switching transistor, the grid of described the 4th switching transistor receives described sweep signal because of the electric property coupling relation, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, and second source/drain electrode of described the 4th switching transistor receives a data voltage because of the electric property coupling relation;
The conduction and cut-off opposite states of the transistorized conduction and cut-off state of described first switching transistor and described second switch and described the 3rd switching transistor and described the 4th switching transistor.
2. image element circuit as claimed in claim 1 is characterized in that, described first switching transistor and described second switch transistor are the P transistor npn npn, and described the 3rd switching transistor and described the 4th switching transistor are the N transistor npn npn.
3. an active matrix organic LED display is characterized in that, described display comprises:
One data drive circuit;
Scan driving circuit; And
At least one pixel comprises:
One Organic Light Emitting Diode;
One storage capacitors comprises one first end and one second end;
One driving transistors, shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to described first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode;
One first switching transistor, the grid of described first switching transistor sees through the one scan line and is electrically coupled to described scan drive circuit, first source/drain electrode of described first switching transistor is electrically coupled to a predeterminated voltage, and second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors;
One second switch transistor, the transistorized grid of described second switch sees through described sweep trace and is electrically coupled to described scan drive circuit, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, and the transistorized second source/drain electrode of described second switch is electrically coupled to the grid of described driving transistors;
One the 3rd switching transistor, the grid of described the 3rd switching transistor sees through described sweep trace and is electrically coupled to described scan drive circuit, first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, and second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors; And
One the 4th switching transistor, the grid of described the 4th switching transistor sees through described sweep trace and is electrically coupled to described scan drive circuit, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, and second source/drain electrode of described the 4th switching transistor sees through a data line and is electrically coupled to described data drive circuit;
Wherein, the grid cut-in voltage of the transistorized grid cut-in voltage of described first switching transistor and described second switch and described the 3rd switching transistor and described the 4th switching transistor is anti-phase each other.
4. active matrix organic LED display as claimed in claim 3, it is characterized in that, described first switching transistor and described second switch transistor are the P transistor npn npn, and described the 3rd switching transistor and described the 4th switching transistor are the N transistor npn npn.
5. the driving method of an image element circuit, described image element circuit comprises an Organic Light Emitting Diode, a storage capacitors and a driving transistors, described driving transistors is shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to one first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode; Described driving method comprises step:
Described first end of one predeterminated voltage to described storage capacitors is provided, and one second end of described storage capacitors is communicated with the grid of described driving transistors;
Described second end of one data voltage to described storage capacitors is provided, and described first end that makes described storage capacitors see through described driving transistors and described Organic Light Emitting Diode be discharged to the conducting electric current of described Organic Light Emitting Diode almost nil till so that described storage capacitors has a quantity of electric charge; And
Provide described predeterminated voltage to described first end of described storage capacitors and described second end of described storage capacitors is communicated with the described grid of described driving transistors again, to drive described Organic Light Emitting Diode shinny so that described driving transistors produces a pixel current according to the described quantity of electric charge of described storage capacitors;
When described pixel more comprises one first switching transistor and a second switch transistor, and first source/drain electrode of described first switching transistor is electrically coupled to described predeterminated voltage, second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, when the transistorized second source/drain electrode of described second switch is electrically coupled to the described grid of described driving transistors, aforementionedly provide described predeterminated voltage, and described second end of described storage capacitors comprised with the step that the grid of described driving transistors communicates to described first end of described storage capacitors:
Described first switching transistor of conducting and described second switch transistor;
When described pixel more comprises one the 3rd switching transistor and one the 4th switching transistor, and first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, when second source/drain electrode of described the 4th switching transistor is electrically coupled to described data voltage, aforementioned described second end of described data voltage that provide to described storage capacitors, and described first end that makes described storage capacitors see through described driving transistors and described Organic Light Emitting Diode be discharged to the conducting electric current of described Organic Light Emitting Diode almost nil till comprise so that described storage capacitors has the step of the described quantity of electric charge:
By described first switching transistor and described second switch transistor, and described the 3rd switching transistor of conducting and described the 4th switching transistor.
6. driving method as claimed in claim 5, it is characterized in that, described first end of described predeterminated voltage to described storage capacitors is provided, and described second end of described storage capacitors more comprised with the step that the grid of described driving transistors communicates:
By described the 3rd switching transistor and described the 4th switching transistor.
7. driving method as claimed in claim 5, it is characterized in that the conduction and cut-off state of described first switching transistor, described second switch transistor, described the 3rd switching transistor and described the 4th switching transistor is determined by same control signal.
8. driving method as claimed in claim 5, it is characterized in that, provide described predeterminated voltage to described first end of described storage capacitors and described second end of described storage capacitors is communicated with the described grid of described driving transistors again, drive the shinny step of described Organic Light Emitting Diode and comprise so that described driving transistors produces described pixel current according to the described quantity of electric charge of described storage capacitors:
Described first switching transistor of conducting and described second switch transistor, and by described the 3rd switching transistor and described the 4th switching transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101619291A CN101656043B (en) | 2009-09-01 | 2009-09-01 | Pixel circuit, active matrix organic light-emitting diode display and drive method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101619291A CN101656043B (en) | 2009-09-01 | 2009-09-01 | Pixel circuit, active matrix organic light-emitting diode display and drive method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101656043A CN101656043A (en) | 2010-02-24 |
| CN101656043B true CN101656043B (en) | 2011-05-04 |
Family
ID=41710310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101619291A Active CN101656043B (en) | 2009-09-01 | 2009-09-01 | Pixel circuit, active matrix organic light-emitting diode display and drive method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101656043B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103562988A (en) * | 2011-05-20 | 2014-02-05 | 伊格尼斯创新公司 | System and methods for extraction of threshold and mobility parameters in amoled displays |
| CN105210139A (en) * | 2013-03-15 | 2015-12-30 | 伊格尼斯创新公司 | System and methods for extraction of parameters in AMOLED displays |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799246B2 (en) | 2011-05-20 | 2017-10-24 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
| CN101901576B (en) * | 2010-07-26 | 2012-12-12 | 友达光电股份有限公司 | Organic light-emitting diode pixel circuit |
| CN102760404B (en) * | 2011-04-28 | 2015-01-28 | 瀚宇彩晶股份有限公司 | Pixel circuit of light-emitting diode display and drive method of pixel circuit |
| US9530349B2 (en) | 2011-05-20 | 2016-12-27 | Ignis Innovations Inc. | Charged-based compensation and parameter extraction in AMOLED displays |
| CN103366672A (en) * | 2012-04-10 | 2013-10-23 | 东莞万士达液晶显示器有限公司 | Light-emitting component driving circuit and pixel circuit |
| CN105096818B (en) * | 2014-12-17 | 2017-11-28 | 北京大学深圳研究生院 | Display device and its image element circuit, driving method |
| CN109936890B (en) * | 2017-12-18 | 2022-03-15 | 群创光电股份有限公司 | Electronic device |
| CN109935218B (en) * | 2019-01-21 | 2020-12-01 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel and display device |
| CN111710289B (en) * | 2020-06-24 | 2024-05-31 | 天津中科新显科技有限公司 | Pixel driving circuit and driving method of active light emitting device |
| CN113436579B (en) * | 2021-05-13 | 2023-09-22 | 北京大学深圳研究生院 | Three-dimensional integrated circuit and manufacturing method thereof |
-
2009
- 2009-09-01 CN CN2009101619291A patent/CN101656043B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103562988A (en) * | 2011-05-20 | 2014-02-05 | 伊格尼斯创新公司 | System and methods for extraction of threshold and mobility parameters in amoled displays |
| CN103562988B (en) * | 2011-05-20 | 2017-04-05 | 伊格尼斯创新公司 | System and method for extracting threshold value and mobility parameters in displayer |
| CN105210139A (en) * | 2013-03-15 | 2015-12-30 | 伊格尼斯创新公司 | System and methods for extraction of parameters in AMOLED displays |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101656043A (en) | 2010-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101656043B (en) | Pixel circuit, active matrix organic light-emitting diode display and drive method thereof | |
| CN102881255B (en) | Active organic light emitting diode circuit and operation method thereof | |
| TWI417840B (en) | Pixel circuit, active matrix organic light emitting diode (oled) display and driving method for pixel circuit | |
| CN103778889B (en) | Organic light emitting diode circuit and driving method thereof | |
| CN104200778B (en) | Image element circuit and its driving method, display floater, display device | |
| CN100585682C (en) | Device and method for driving active matrix light-emitting display panel | |
| CN103714778B (en) | Image element circuit, the driving method of image element circuit and display device | |
| CN104200777B (en) | Image element circuit and its driving method, display floater, display device | |
| CN1612192A (en) | Image display device | |
| CN105185305A (en) | Pixel circuit, driving method thereof and related device | |
| CN102682705B (en) | Active matrix organic light emitting diode (AMOLED) pixel driving circuit | |
| CN103839520A (en) | Pixel circuit, method for driving pixel circuit, display panel and display device | |
| CN102682706B (en) | AMOLED (active matrix/organic light emitting diode) pixel driving circuit | |
| CN203733448U (en) | Pixel circuit, display panel and display device | |
| CN104167173A (en) | Pixel circuit for active organic light-emitting diode displayer | |
| CN103035202A (en) | Pixel compensating circuit | |
| WO2014172977A1 (en) | Pixel drive circuit, array substrate and display device | |
| US9886901B2 (en) | Pixel unit structure of organic light emitting diode display panel and driving mechanism thereof | |
| CN105448234A (en) | Pixel circuit, driving method thereof, and active matrix organic light emitting display | |
| CN105206222A (en) | Oled pixel compensation circuit and oled pixel driving method | |
| CN101697269B (en) | Pixel circuit and pixel driving method | |
| CN103745690A (en) | Pixel structure and driving method thereof | |
| CN101859542A (en) | Organic light emitting diode display device and organic light emitting diode pixel circuit thereof | |
| CN105355170A (en) | Pixel compensating circuit for active matrix organic light-emitting diode display | |
| CN103295519B (en) | Display and driving pixels approach |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |