CN101645474A - Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus - Google Patents

Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus Download PDF

Info

Publication number
CN101645474A
CN101645474A CN200810129834A CN200810129834A CN101645474A CN 101645474 A CN101645474 A CN 101645474A CN 200810129834 A CN200810129834 A CN 200810129834A CN 200810129834 A CN200810129834 A CN 200810129834A CN 101645474 A CN101645474 A CN 101645474A
Authority
CN
China
Prior art keywords
layer
semiconductor layer
photoelectric cell
light
transparency conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200810129834A
Other languages
Chinese (zh)
Other versions
CN101645474B (en
Inventor
杨雅兰
王心盈
林锦源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to CN201210006818.5A priority Critical patent/CN102522486B/en
Priority to CN2008101298347A priority patent/CN101645474B/en
Publication of CN101645474A publication Critical patent/CN101645474A/en
Application granted granted Critical
Publication of CN101645474B publication Critical patent/CN101645474B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Devices (AREA)

Abstract

The invention discloses a photoelectric element and a manufacturing method thereof, a backlight module device and an illuminating apparatus. The photoelectric element comprises a semiconductor light-emitting lamination layer, a transparent conducting layer and a metal reflecting layer, wherein the semiconductor light-emitting lamination layer is provided with a first semiconductor layer, an activelayer and a second semiconductor layer, and the surface of the first semiconductor layer is provided with a plurality of dents; the transparent conducting layer is formed on the surface of the firstsemiconductor layer so that holes containing air are formed in the dents; and the metal reflecting layer is further arranged on the transparent conducting layer so as to form an all-directional reflecting layer with high reflectivity. The photoelectric element and the manufacturing method thereof, the backlight module device and the illuminating apparatus increase light-emitting efficiency of theelement.

Description

Photoelectric cell and manufacture method thereof, back light module device and lighting device
Technical field
The present invention relates to a kind of photoelectric cell, particularly a kind of light-emitting diode with high efficiency reflector.
Background technology
Light-emitting diode and traditional incandescent lamp bulb and cold cathode fluorescent lamp are compared, advantageous characteristic with power saving and longer service life, so be widely used among the various fields, for example industries such as traffic sign, backlight module, street lighting, Medical Devices and communication storage device.
For promoting the light extraction efficiency of light-emitting diode, usually in the appropriate location of light emitting diode construction, between substrate and luminous lamination, a reflector is set, can reduce the extinction effect of substrate, make the reflex in the above-mentioned reflector of light transmission that luminescent layer produces and increase bright dipping.The reflector metal materials with high reflection characteristic that adopt, for example gold (Au) or silver (Ag) are used as the individual reflection metal level more.The albedo in this kind reflector depends on the size of its reflection coefficient of material of selected reflective metal layer, and for example gold (Au) approximately is 86%, silver (Ag) approximately is 92%.
Another reflector that often applies in the light emitting diode construction is Bragg mirror (Distributed Bragg Reflector:DBR).Bragg mirror (DBR) is the structure that the material of the multilayer tool different refractivity of about 1/4th optical wavelength is formed by thickness, and its composition material is selected numerous, for example is by SiO 2/ TiO 2Formed sandwich construction or the semiconductor layer of being made up of the formed difference of epitaxy technique is piled up the sandwich construction that forms.Its reflectivity depends on the number of plies of sandwich construction and the collocation design of variations in refractive index.
In light emitting diode construction, still can adopt the design in a kind of isotropic directivity reflector (omni-directionreflector:ODR), it has usually than the better reflecting effect in common metal reflector.The structure that forms is piled up by semiconductor layer, low-index layer and metal level in isotropic directivity reflector (ODR), wherein the thickness of low-index layer (low index layer) is the multiple of 1/4th optical wavelength, and be generally insulating material, for example silicon dioxide (SiO 2) or silicon nitride (Si 3N 4), so do not have the characteristic of conduction.
As mentioned above, the appropriate location of a reflector in light emitting diode construction being set, increasing the light extraction efficiency of element, is a known and effective method, but how to design a reflector that reflection efficiency is higher, just becomes a target that everybody pursued.
Summary of the invention
The invention provides a kind of photoelectric cell, it comprises semi-conductor layer, and its surface has many depressions; One intermediate layer is formed at the surface of semiconductor layer, and these are recessed to form the contain air hole of (refraction coefficient is about 1); And a reflector, be formed on the intermediate layer, to form an isotropic directivity reflector (ODR) with high reflection efficiency; Wherein above-mentioned intermediate layer can be transparency conducting layer or dielectric layer.
The present invention also provides a kind of photoelectric cell, and it comprises the luminous lamination of semiconductor, and it has one first semiconductor layer, an active layer and one second semiconductor layer, and the surface of first semiconductor layer has many depressions; One transparency conducting layer is formed at the surface of first semiconductor layer, and these are recessed to form the contain air hole of (refraction coefficient is about 1); One metallic reflector is formed on the transparency conducting layer, so that form an isotropic directivity reflector (ODR) with high reflection efficiency.
The present invention mainly be wish by on be set forth in formed hole design between semiconductor layer and the transparency conducting layer, reach the effect of the refraction coefficient that reduces transparency conducting layer, to promote the reflection efficiency in isotropic directivity reflector (ODR), making can the bright dipping via the reflex of isotropic directivity reflector (ODR) by light that active layer produced, to increase the light extraction efficiency of element.
Description of drawings
Fig. 1 is according to the first embodiment of the present invention.
Fig. 2 is for according to a second embodiment of the present invention.
Fig. 3 is an a third embodiment in accordance with the invention.
Fig. 4 is according to backlight modular structure figure of the present invention.
Fig. 5 is according to illuminator structure figure of the present invention.
Description of reference numerals
200 substrates, 210 first semiconductor layers
220 active layers, 230 second semiconductor layers
231 holes, 232 depressions
240 transparency conducting layers, 250 metallic reflectors
270 first electrodes, 280 second electrodes
300 substrates, 310 binder couses
320 metallic reflectors, 330 transparency conducting layers
340 first semiconductor layers, 341 holes
342 depressions, 350 active layers
360 second semiconductor layers, 370 first electrodes
380 second electrodes
600 back light module devices, 610 light supply apparatuses
611 light-emitting components, 620 Optical devices
630 power systems, 700 lighting devices
710 light supply apparatuses, 711 light-emitting components
720 power systems, 730 control elements
Embodiment
Fig. 1 is the first embodiment of the present invention.As shown be a light-emitting component, a light emitting diode construction for example, be on substrate 200, to form one first semiconductor layer 210 with extensional mode, on first semiconductor layer 210, form an active layer 220 again, form one second semiconductor layer 230 at last on active layer 220, wherein both electrically different of first semiconductor layer 210 and second semiconductor layer 230.The person of connecing, form a plurality of depressions 232 on the surface of second semiconductor layer 230, and cover a transparency conducting layer 240 above it, this moment, transparency conducting layer 240 can't fill up depression 232, thereby form a plurality of holes 231, wherein roughly comprise air (refraction coefficient is about 1).And then in the top of transparency conducting layer 240, form a metallic reflector 250, second semiconductor layer 230, transparency conducting layer 240 form an isotropic directivity reflector (omni-direction reflector:ODR) with high reflection efficiency with metallic reflector 250 at this moment.Respectively above first semiconductor layer 210 and metallic reflector 250, form one first electrode 270 and one second electrode 280 at last, just can finish the light-emitting diode structure of present embodiment.
Above-mentioned a plurality of holes 231 its sizes are principle so that the transparency conducting layer of its top can't be inserted hole 231, and its maximum gauge preferably is about less than 200nm, makes wherein roughly to comprise air (refraction coefficient is about 1); Its shape is also unrestricted, can be hexagon hole, inverted pyramid shape, irregular polygon etc.; Its arrangement mode is also unrestricted, for example is periodic arrangement or irregular alignment.The generation type of depression 230 is not limited to yet, and is exemplified below: (a) epitaxy--and in the epitaxy technique that forms second semiconductor layer 230,, make the surface of second semiconductor layer 230 form a plurality of depressions 232 naturally by control extension condition; (b) wet etching--after finishing second semiconductor layer 230,, select suitable etching solution example hydrochloric acid or phosphoric acid, the nano-photoetching etching is carried out on the surface of second semiconductor layer 230, form depression 232 according to the material of second semiconductor layer 230; (C) nano impression method (nano-imprint)--finish after second semiconductor layer 230, carry out the nano print processing step, have nano level a plurality of depression 232 with formation on its surface; (d) the nanometer spheroid scatters method--after finishing second semiconductor layer 230, scatter as SiO on its surface 2, Al 2O 3, TiO 2, nanometer spheroids such as MgO, ZnO, just can form a plurality of depressions 232 on the surface of second semiconductor layer 230; (e) high temperature alloy ball method--the surface at second semiconductor layer 230 forms a thin metal layer earlier, utilizes the high temperature alloy method again, changes this thin metal layer into metal ball body, just can form a plurality of depressions 232 on the surface of second semiconductor layer 230; (f) mechanical type roughening method--on the surface of second semiconductor layer 230, utilize the mode of mechanical lapping to form a plurality of depressions 232 in the surface of second semiconductor layer 230; (g) dry-etching method---on the surface of second semiconductor layer 230, utilize dry-etching method such as method for plasma etching, el method or laser-induced thermal etching method etc., to carrying out etching in the surface of second semiconductor layer 230, form a plurality of depressions 232.Forming these depressions 232 is between semiconductor layer 230 and transparency conducting layer 240, form the structure in the hole 231 of contain air (refractive index is approximately 1), the structural design that sees through hole 231 reaches the effect of the refraction coefficient that reduces transparency conducting layer 240, and then improves the albedo in isotropic directivity reflector (ODR).
Substrate 200 in the foregoing description, can be Al 2O 3, GaN, AlN, SiC, GaAs, GaP, Si, ZnO, MgO, MgAl 2O 4And at least a material or other replaceable material replace it in the material group that glass constituted; First semiconductor layer 210, active layer 220 and second semiconductor layer 230 can be selected from materials such as GaN, AlGaN, InGaN, AlGaInP and AlInGaN; First electrode 270 and one second electrode 280 are selected from least a material in the material group that Al, Ti, Ti/Al, Cr/Al, Ti/Au, Cr/Au, Ni/Au, TiW, TiN, WSi, Au/Ge, Pt, Pd and Rb constitute; Transparency conducting layer 240 is selected from least a material in tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum and the material group that zinc-tin oxide constituted; Metallic reflector 250 is the material of conductivity with high reflectance, for example aluminium (Al) or silver (Ag).
Be illustrated in figure 2 as the second embodiment of the present invention.The place that the structure of present embodiment is different with first embodiment, be by first semiconductor layer 210, transparency conducting layer 240 and metallic reflector 250 formed isotropic directivity reflector (ODR) between substrate 200 and active layer 220, make that being produced the light of launching downwards by active layer 220 reflects bright dipping via the reflex of isotropic directivity reflector (ODR), and avoid being absorbed, and then improve light extraction efficiency by lower substrate.Wherein transparency conducting layer 240 except be constituted by transparent conductive materials such as tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum and zinc-tin oxide; Also can replace by a dielectric layer, this dielectric layer can be an Inorganic Dielectric Material, for example silicon dioxide (SiO 2), aluminium oxide (Al 2O 3), silicon nitride (SiNx) or spin-coating glass (spin-on glass) etc., or organic dielectric materials, for example epoxy resin (epoxy), pi (polyimide) or BCB resin (benzocyclobutene) etc.
Be illustrated in figure 3 as the third embodiment of the present invention.Present embodiment is to utilize the formed light emitting diode construction of substrate transfer method, and it has an electrically-conductive backing plate 300; Its below is provided with one first electrode 370; Its top sees through a binder couse 310 and connects a sandwich construction, comprises the metallic reflector 320 of binder couse 310 tops; The transparency conducting layer 330 of metallic reflector 320 tops; And the extension lamination of transparency conducting layer 330 tops, comprise one first semiconductor layer 340, and on first semiconductor layer 340, form an active layer 350, and on active layer 350, form one second semiconductor layer 360, wherein both electrically different of first semiconductor layer 340 and second semiconductor layer 360; Last one second electrode 380 that above second semiconductor layer 360, forms.Wherein contact at the interface with transparency conducting layer 330 at first semiconductor layer 340, form a plurality of depressions 342 on the surface of first semiconductor layer 340, and transparency conducting layer 330 can't fill up depression 342, and form a plurality of holes 341, wherein roughly comprise air (refraction coefficient is about 1), wherein the formation method in the hole 341 of present embodiment, size, shape, identical with aforesaid embodiment with arrangement mode.By first semiconductor layer 340, transparency conducting layer 330 and metallic reflector 320, (omni-direction reflector:ODR) has high reflection efficiency in formed isotropic directivity reflector, when the light that is produced by luminous lamination is down launched, reflect bright dipping via the reflex of isotropic directivity reflector (ODR), avoiding light to be absorbed, and then improve light extraction efficiency by the substrate of below.
Substrate 300 in the present embodiment, and for having the substrate of conductive characteristic, at least a material or other replaceable material replace it in the material group that for example silicon substrate, copper base and SiC constituted; First semiconductor layer 340, active layer 350 and second semiconductor layer 360 can be selected from a kind of material in GaN, AlGaN, InGaN, AlGaInP and the AlInGaN institute constituent material group; First electrode 370 and one second electrode 380 are selected from least a material in Al, Ti, Ti/Al, Cr/Al, Ti/Au, Cr/Au, Ni/Au, TiW, TiN, WSi, Au/Ge, Pt, Pd and the Rb institute constituent material group; Transparency conducting layer 330 is selected from least a material in tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum and the zinc-tin oxide institute constituent material group; Metallic reflector 320 is the material of conductivity with high reflectance, for example aluminium (Al) or silver (Ag); Tack coat 310 is selected from least a material in epoxy resin (epoxy), pi (polyimide) or BCB resin (benzocyclobutene) the institute constituent material group.
All above-mentioned embodiment are not limited to light-emitting diode, can the isotropic directivity reflector (ODR) of pore structure design will be had, be applied to any any appropriate location that needs the photoelectric cell in reflector, as solar cell (Solar Cell) or laser diode (Laser Diode) etc.
Fig. 4 shows backlight modular structure of the present invention.Wherein back light module device 600 comprises: a light supply apparatus 610 that is made of the light-emitting component 611 of the above-mentioned any embodiment of the present invention; One Optical devices 620 place going out on the light path of light supply apparatus 610, and light is done suitable processing back bright dipping; And a power system 630, provide above-mentioned light supply apparatus 610 required power supply.
Fig. 5 shows illuminator structure of the present invention.Above-mentioned lighting device 700 can be car light, street lamp, flashlight, street lamp, indicator light or the like.Wherein lighting device 700 comprises: a light supply apparatus 710 is made of the light-emitting component 711 of the above-mentioned any embodiment of the present invention; One power system 720 provides light supply apparatus 710 required power supply; An and control element 730 control power supply input light supply apparatuses 710.
Though by each embodiment explanation as above, so it is not in order to limit claim of the present invention in invention.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.

Claims (11)

1, a kind of photoelectric cell comprises:
The luminous lamination of semiconductor has one first semiconductor layer, an active layer and one second semiconductor layer, a surface of this one first semiconductor layer wherein, and this surface has a plurality of depressions;
One transparency conducting layer is formed on this surface of this first semiconductor layer, makes those be recessed to form a plurality of holes; And
One metallic reflector is formed on this transparency conducting layer.
2, photoelectric cell as claimed in claim 1, wherein the maximum gauge in this hole is less than 200nm.
3, photoelectric cell as claimed in claim 1, wherein the refraction coefficient in this hole is 1.
4, photoelectric cell as claimed in claim 1, wherein the shape in this hole can be hexagon hole, inverted pyramid shape or irregular polygon.
5, photoelectric cell as claimed in claim 1, wherein this hole can be periodic arrangement or irregular alignment.
6, photoelectric cell as claimed in claim 1, the method that wherein forms this depression can be epitaxy, wet etching, nano print method, nanometer spheroid distribution method, high temperature alloy ball method, mechanical type roughening method or dry-etching method.
7, photoelectric cell as claimed in claim 1, wherein this transparency conducting layer can be replaced by an inorganic dielectric layer or organic dielectric layer.
8, a kind of photoelectric cell manufacture method, its step comprises:
Formation has the luminous lamination of semiconductor of one first semiconductor layer, an active layer and one second semiconductor layer;
Form on a plurality of surfaces that are depressed in this one first semiconductor layer;
Form a transparency conducting layer on this surface of this first semiconductor layer, and make those be recessed to form a plurality of holes; And
Form a metallic reflector on this transparency conducting layer.
9, photoelectric cell manufacture method as claimed in claim 8, the method that wherein forms these a plurality of depressions are epitaxy, wet etching, nano print method, nanometer spheroid distribution method, high temperature alloy ball method, mechanical type roughening method or dry-etching method.
10, a kind of back light module device comprises:
One light supply apparatus, one of them is formed by the described photoelectric cell of claim 1～9;
One Optical devices place the going out on the light path of this light supply apparatus; And
One power system provides this light supply apparatus required power supply.
11, a kind of lighting device comprises:
One light supply apparatus, one of them is formed by the described photoelectric cell of claim 1～9;
One power system provides this light supply apparatus required power supply; And
One control element is controlled this power supply and is imported this light supply apparatus.
CN2008101298347A 2008-08-07 2008-08-07 Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus Active CN101645474B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210006818.5A CN102522486B (en) 2008-08-07 2008-08-07 Photoelectric cell
CN2008101298347A CN101645474B (en) 2008-08-07 2008-08-07 Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008101298347A CN101645474B (en) 2008-08-07 2008-08-07 Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210006818.5A Division CN102522486B (en) 2008-08-07 2008-08-07 Photoelectric cell

Publications (2)

Publication Number Publication Date
CN101645474A true CN101645474A (en) 2010-02-10
CN101645474B CN101645474B (en) 2012-03-21

Family

ID=41657258

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210006818.5A Active CN102522486B (en) 2008-08-07 2008-08-07 Photoelectric cell
CN2008101298347A Active CN101645474B (en) 2008-08-07 2008-08-07 Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201210006818.5A Active CN102522486B (en) 2008-08-07 2008-08-07 Photoelectric cell

Country Status (1)

Country Link
CN (2) CN102522486B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108808444A (en) * 2018-06-19 2018-11-13 扬州乾照光电有限公司 A kind of upside-down mounting VCSEL chips and production method
WO2020000408A1 (en) * 2018-06-29 2020-01-02 天津三安光电有限公司 Led chip structure
WO2020107782A1 (en) * 2018-11-30 2020-06-04 武汉华星光电技术有限公司 Surface light source chip and light-emitting diode thereof
CN112331753A (en) * 2020-11-06 2021-02-05 业成科技（成都）有限公司 Light emitting diode structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111883625A (en) * 2020-07-08 2020-11-03 扬州乾照光电有限公司 LED chip structure and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054381A (en) * 2004-08-16 2006-02-23 Sony Corp Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illumination device, and manufacturing method thereof
TWI239668B (en) * 2004-10-21 2005-09-11 Formosa Epitaxy Inc Structure of gallium-nitride based (GaN-based) light-emitting diode with high luminance
CN100386896C (en) * 2005-02-08 2008-05-07 晶元光电股份有限公司 LED and production thereof
JP4765415B2 (en) * 2005-06-02 2011-09-07 日立電線株式会社 Light emitting diode and manufacturing method thereof
JP4670489B2 (en) * 2005-06-06 2011-04-13 日立電線株式会社 Light emitting diode and manufacturing method thereof
TW200717843A (en) * 2005-10-19 2007-05-01 Epistar Corp Light-emitting element with high-light-extracting-efficiency
CN100490196C (en) * 2006-06-12 2009-05-20 武东星 Solid luminous element of high light emission
CN101222009A (en) * 2007-01-12 2008-07-16 清华大学 Led
DE102007003282B4 (en) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108808444A (en) * 2018-06-19 2018-11-13 扬州乾照光电有限公司 A kind of upside-down mounting VCSEL chips and production method
WO2020000408A1 (en) * 2018-06-29 2020-01-02 天津三安光电有限公司 Led chip structure
CN110800116A (en) * 2018-06-29 2020-02-14 天津三安光电有限公司 LED chip structure
WO2020107782A1 (en) * 2018-11-30 2020-06-04 武汉华星光电技术有限公司 Surface light source chip and light-emitting diode thereof
CN112331753A (en) * 2020-11-06 2021-02-05 业成科技（成都）有限公司 Light emitting diode structure

Also Published As

Publication number Publication date
CN102522486A (en) 2012-06-27
CN102522486B (en) 2015-11-18
CN101645474B (en) 2012-03-21

Similar Documents

Publication Publication Date Title
TWI420694B (en) Opto-electrical device
JP5074458B2 (en) Light emitting diode and manufacturing method thereof
CN100492686C (en) Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
US7294866B2 (en) Flip-chip light-emitting device with micro-reflector
JP6387780B2 (en) Light emitting device and manufacturing method thereof
TWI344709B (en) Light emitting device
US9337407B2 (en) Photoelectronic element and the manufacturing method thereof
GB2447091A (en) Vertical LED
CN101379625A (en) Light emitting diode device, and manufacture and use thereof
CN202423369U (en) Light-emitting diode chip
US8035123B2 (en) High light-extraction efficiency light-emitting diode structure
CN101645474B (en) Photoelectric element and manufacturing method thereof, backlight module device and illuminating apparatus
CN103779464A (en) Flip-chip light emitting diode and application thereof
CN103367578A (en) Light emitting diode
CN102185073A (en) Flip light-emitting diode and manufacturing method thereof
CN102194974B (en) Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system
TW200905910A (en) Light emitting device
CN106653965A (en) Semiconductor light emitting device
US8674594B2 (en) Flip-chip type light-emitting device with curved reflective layer
CN110473864A (en) LED matrix and the LED light for using LED matrix
TWI385826B (en) A led device comprising a transparent material lamination having graded refractive index, or a led device having heat dissipation property, and applications of the same
CN203812901U (en) Light-emitting device
CN100444416C (en) Method for preparing LED, and structure
TWI509832B (en) Opto-electrical device
KR20160137476A (en) Light Emitting Diode

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant