CN101645028A - Measuring method of memory voltage based on blade server - Google Patents

Measuring method of memory voltage based on blade server Download PDF

Info

Publication number
CN101645028A
CN101645028A CN200910018504A CN200910018504A CN101645028A CN 101645028 A CN101645028 A CN 101645028A CN 200910018504 A CN200910018504 A CN 200910018504A CN 200910018504 A CN200910018504 A CN 200910018504A CN 101645028 A CN101645028 A CN 101645028A
Authority
CN
China
Prior art keywords
voltage
memory
blade server
standard
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910018504A
Other languages
Chinese (zh)
Inventor
宋晓锋
李涛
刘艳霞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inspur Electronic Information Industry Co Ltd
Original Assignee
Langchao Electronic Information Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Langchao Electronic Information Industry Co Ltd filed Critical Langchao Electronic Information Industry Co Ltd
Priority to CN200910018504A priority Critical patent/CN101645028A/en
Publication of CN101645028A publication Critical patent/CN101645028A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The invention provides a measuring method of the memory voltage based on a blade server, which takes voltage measuring quality as guide, follows Intel specifications, provides a high-quality signal source which accords with the specifications by a mainboard source end of the blade server , measures the stability of a memory bank of the blade server, ensures the reliable operation of a memory and comprises the following measuring steps: (1) setting ranges of a working voltage current value and a reference voltage value of a mainboard memory according to the specifications defined by an Intel memory, and then measuring a DDR3 memory by a measuring jig with a USB interface function; (2) setting the range of the working voltage current value of the memory bank according to the specifications defined by a Jedec memory, and then measuring the DDR3 memory by an oscillograph.

Description

A kind of method of testing based on the blade server memory voltage
Technical field
The present invention relates to computer communication field, be specifically related to a kind of problem of utilizing voltage tester to solve the high stability of blade server internal memory.
Background technology
Current server system, the blade server system of enterprise-level application particularly, requirement for Performance And Reliability is more and more higher, remove CPU, outside the hard disk, the internal memory conduct is one of important components wherein, Performance And Reliability to total system plays important effect, internal memory is from SDRAM at present, DDR, DDRII, the DDR3 of mainstream applications up till now, performance is more and more higher, capacity is also increasing, thereby it is also more and more higher to be accompanied by power consumption, and wall scroll content power consumption is near 30W, the amount of memory that the separate unit server master board adopts can reach 18, therefore for internal memory, how to guarantee the design of its voltage module, play crucial effects for the stability of whole server system.
Summary of the invention
The purpose of this invention is to provide a kind of method of testing based on the blade server memory voltage.
The objective of the invention is to realize in the following manner, is guiding with the voltage tester quality, follows the Intel standard, utilize server host board source end that the high-grade signal source of compliant is provided, the stability of testing server memory bar is guaranteed the reliable operation of internal memory, and concrete testing procedure is as follows:
1) according to the standard of Intel internal memory, defines the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value;
2) according to of the requirement of Jetec association for memory voltage, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V;
3) utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104,1GHZ bandwidth oscillograph, probe uses Tektronix6245,1.5GHZ bandwidth, carry out voltage ripple, quiescent voltage, the test of output current value;
4) use Tektronix TDS7104,1GHZ bandwidth oscillograph carries out the memory bar test on the motherboard, the magnitude of voltage of test 1.5V.
Excellent effect of the present invention is can detect the DDR3 internal memory fast and effectively, the problem of realization raising blade server internal memory high stability.
Description of drawings
Fig. 1 is the test flow chart of internal memory.
Fig. 2 is the blade server memory voltage value table of comparisons;
Fig. 3 is the memory voltage value scope table of comparisons.
Embodiment
The present invention utilizes Intel standard and Jedec standard to be the theory support point, is the problem that concrete check form solves the high stability of blade server internal memory with the voltage signal test, and concrete summary of the invention can be divided into following two aspects:
1) according to the standard of Intel internal memory definition, formulates the working voltage current value of mainboard internal memory and the scope of reference voltage level, use measurement jig that the DDR3 memory bar is tested then with usb function;
2) according to the standard of Jedec internal memory definition, formulate the scope of the working voltage current value of memory bar, use oscillograph that memory bar is tested then.
Concrete testing procedure is as follows:
1. according to the standard of Intel internal memory, go to define the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value
2. according to of the requirement of Jetec association, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V for memory voltage
With reference to the accompanying drawings, content of the present invention is carried out a more detailed enforcement and does an elaboration:
3. as described in the summary of the invention, at first we utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104 (1GHZ bandwidth) oscillograph, probe uses Tektronix 6245 (1.5GHZ bandwidth), carry out voltage ripple, quiescent voltage, the test of output current value
4. secondly, the memory bar that we use Tektronix TDS7104 (1GHZ bandwidth) oscillograph to carry out on the motherboard is tested, and mainly is the magnitude of voltage of test 1.5V.
Through top detailed signal testing, we can very clearly know nonresident portion working condition in the whole blade server, meet some such as internal memory detect less than, system performance reduce, system delays problems such as machine, very clearly the orientation problem key is pointed out in those places, that link, according to phenomenon and voltage tester analysis result, find final problem place and solution then, guarantee the high stability work of whole blade server.

Claims (1)

1, a kind of method of testing based on the blade server memory voltage, it is characterized in that, with the voltage tester quality is guiding, follow the Intel standard, utilize server host board source end that the high-grade signal source of compliant is provided, the stability of testing server memory bar is guaranteed the reliable operation of internal memory, and concrete testing procedure is as follows:
1) according to the standard of Intel internal memory, defines the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value;
2) according to of the requirement of Jetec association for memory voltage, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V;
3) utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104,1GHZ bandwidth oscillograph, probe uses Tektronix6245,1.5GHZ bandwidth, carry out voltage ripple, quiescent voltage, the test of output current value;
4) use Tektronix TDS7104,1GHZ bandwidth oscillograph carries out the memory bar test on the motherboard, the magnitude of voltage of test 1.5V.
CN200910018504A 2009-09-04 2009-09-04 Measuring method of memory voltage based on blade server Pending CN101645028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200910018504A CN101645028A (en) 2009-09-04 2009-09-04 Measuring method of memory voltage based on blade server

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910018504A CN101645028A (en) 2009-09-04 2009-09-04 Measuring method of memory voltage based on blade server

Publications (1)

Publication Number Publication Date
CN101645028A true CN101645028A (en) 2010-02-10

Family

ID=41656922

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910018504A Pending CN101645028A (en) 2009-09-04 2009-09-04 Measuring method of memory voltage based on blade server

Country Status (1)

Country Link
CN (1) CN101645028A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102411526A (en) * 2011-12-31 2012-04-11 曙光信息产业股份有限公司 Test method of mainboard of blade server
CN102521097A (en) * 2011-12-31 2012-06-27 曙光信息产业股份有限公司 Method for testing USB (universal serial bus) signals
CN102841831A (en) * 2011-06-24 2012-12-26 鸿富锦精密工业(深圳)有限公司 System and method for testing server memory
CN103049360A (en) * 2012-12-21 2013-04-17 西安华芯半导体有限公司 Method for regulating power supply voltage applied to testing of memory module on mainboard
WO2016201781A1 (en) * 2015-06-15 2016-12-22 中兴通讯股份有限公司 Time sequence test method and apparatus
CN106776162A (en) * 2016-11-28 2017-05-31 郑州云海信息技术有限公司 A kind of method of signal supervisory instrument and its detection internal memory signal
CN112485627A (en) * 2020-11-17 2021-03-12 苏州浪潮智能科技有限公司 High-reliability server memory power supply jig and using method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102841831A (en) * 2011-06-24 2012-12-26 鸿富锦精密工业(深圳)有限公司 System and method for testing server memory
CN102411526A (en) * 2011-12-31 2012-04-11 曙光信息产业股份有限公司 Test method of mainboard of blade server
CN102521097A (en) * 2011-12-31 2012-06-27 曙光信息产业股份有限公司 Method for testing USB (universal serial bus) signals
CN102521097B (en) * 2011-12-31 2014-03-19 曙光信息产业股份有限公司 Method for testing USB (universal serial bus) signals
CN103049360A (en) * 2012-12-21 2013-04-17 西安华芯半导体有限公司 Method for regulating power supply voltage applied to testing of memory module on mainboard
CN103049360B (en) * 2012-12-21 2015-08-19 西安华芯半导体有限公司 A kind of method of adjustment being applied to the supply voltage that memory modules is tested on mainboard
WO2016201781A1 (en) * 2015-06-15 2016-12-22 中兴通讯股份有限公司 Time sequence test method and apparatus
CN106776162A (en) * 2016-11-28 2017-05-31 郑州云海信息技术有限公司 A kind of method of signal supervisory instrument and its detection internal memory signal
CN112485627A (en) * 2020-11-17 2021-03-12 苏州浪潮智能科技有限公司 High-reliability server memory power supply jig and using method thereof
CN112485627B (en) * 2020-11-17 2022-09-20 苏州浪潮智能科技有限公司 High-reliability server memory power supply jig and using method thereof

Similar Documents

Publication Publication Date Title
CN101645028A (en) Measuring method of memory voltage based on blade server
CN103792498A (en) Automatic power supply testing method
CN102880534A (en) Testing method for memory voltage of Loongson server motherboard
US20130250709A1 (en) Testing system and testing method thereof
CN102928772A (en) Time sequence testing system and testing method thereof
CN102445666A (en) Laptop battery monitoring system and monitoring method
US8624581B2 (en) Input power measuring device
CN201251780Y (en) Internal memory test tool
Cui et al. A fine-grained component-level power measurement method
US10228362B2 (en) Measurement apparatus
CN203164407U (en) Ultrahigh-frequency partial discharge state detection instrument calibrating device
CN101162254B (en) Cpu slot testing device
JP2013108980A (en) Assistant jig for testing ddr signal
CN106328211A (en) Method and device for realizing timing sequence test
CN113496758B (en) Memory Operation Capability Prediction Method
CN102141952B (en) Device for testing system management bus
CN203519782U (en) Electronic device
CN202975264U (en) Test fixture for performing on-line testing on notebook computer
TW201239368A (en) Auxiliary test apparatus
CN202758021U (en) Electrical performance testing device and system
US20150074465A1 (en) Method and device for efficient trace analysis
CN202771809U (en) Intelligent analyzing equipment for NAND Flash chip
CN103000229A (en) Testing card
CN218938940U (en) I2C bus test fixture
CN205229302U (en) Flexible conducting material plane impedance test equipment

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20100210