CN101645028A - Measuring method of memory voltage based on blade server - Google Patents
Measuring method of memory voltage based on blade server Download PDFInfo
- Publication number
- CN101645028A CN101645028A CN200910018504A CN200910018504A CN101645028A CN 101645028 A CN101645028 A CN 101645028A CN 200910018504 A CN200910018504 A CN 200910018504A CN 200910018504 A CN200910018504 A CN 200910018504A CN 101645028 A CN101645028 A CN 101645028A
- Authority
- CN
- China
- Prior art keywords
- voltage
- memory
- blade server
- standard
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 3
- 238000010998 test method Methods 0.000 claims description 3
- 238000012956 testing procedure Methods 0.000 claims description 3
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 2
- 230000006870 function Effects 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Images
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention provides a measuring method of the memory voltage based on a blade server, which takes voltage measuring quality as guide, follows Intel specifications, provides a high-quality signal source which accords with the specifications by a mainboard source end of the blade server , measures the stability of a memory bank of the blade server, ensures the reliable operation of a memory and comprises the following measuring steps: (1) setting ranges of a working voltage current value and a reference voltage value of a mainboard memory according to the specifications defined by an Intel memory, and then measuring a DDR3 memory by a measuring jig with a USB interface function; (2) setting the range of the working voltage current value of the memory bank according to the specifications defined by a Jedec memory, and then measuring the DDR3 memory by an oscillograph.
Description
Technical field
The present invention relates to computer communication field, be specifically related to a kind of problem of utilizing voltage tester to solve the high stability of blade server internal memory.
Background technology
Current server system, the blade server system of enterprise-level application particularly, requirement for Performance And Reliability is more and more higher, remove CPU, outside the hard disk, the internal memory conduct is one of important components wherein, Performance And Reliability to total system plays important effect, internal memory is from SDRAM at present, DDR, DDRII, the DDR3 of mainstream applications up till now, performance is more and more higher, capacity is also increasing, thereby it is also more and more higher to be accompanied by power consumption, and wall scroll content power consumption is near 30W, the amount of memory that the separate unit server master board adopts can reach 18, therefore for internal memory, how to guarantee the design of its voltage module, play crucial effects for the stability of whole server system.
Summary of the invention
The purpose of this invention is to provide a kind of method of testing based on the blade server memory voltage.
The objective of the invention is to realize in the following manner, is guiding with the voltage tester quality, follows the Intel standard, utilize server host board source end that the high-grade signal source of compliant is provided, the stability of testing server memory bar is guaranteed the reliable operation of internal memory, and concrete testing procedure is as follows:
1) according to the standard of Intel internal memory, defines the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value;
2) according to of the requirement of Jetec association for memory voltage, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V;
3) utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104,1GHZ bandwidth oscillograph, probe uses Tektronix6245,1.5GHZ bandwidth, carry out voltage ripple, quiescent voltage, the test of output current value;
4) use Tektronix TDS7104,1GHZ bandwidth oscillograph carries out the memory bar test on the motherboard, the magnitude of voltage of test 1.5V.
Excellent effect of the present invention is can detect the DDR3 internal memory fast and effectively, the problem of realization raising blade server internal memory high stability.
Description of drawings
Fig. 1 is the test flow chart of internal memory.
Fig. 2 is the blade server memory voltage value table of comparisons;
Fig. 3 is the memory voltage value scope table of comparisons.
Embodiment
The present invention utilizes Intel standard and Jedec standard to be the theory support point, is the problem that concrete check form solves the high stability of blade server internal memory with the voltage signal test, and concrete summary of the invention can be divided into following two aspects:
1) according to the standard of Intel internal memory definition, formulates the working voltage current value of mainboard internal memory and the scope of reference voltage level, use measurement jig that the DDR3 memory bar is tested then with usb function;
2) according to the standard of Jedec internal memory definition, formulate the scope of the working voltage current value of memory bar, use oscillograph that memory bar is tested then.
Concrete testing procedure is as follows:
1. according to the standard of Intel internal memory, go to define the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value
2. according to of the requirement of Jetec association, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V for memory voltage
With reference to the accompanying drawings, content of the present invention is carried out a more detailed enforcement and does an elaboration:
3. as described in the summary of the invention, at first we utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104 (1GHZ bandwidth) oscillograph, probe uses Tektronix 6245 (1.5GHZ bandwidth), carry out voltage ripple, quiescent voltage, the test of output current value
4. secondly, the memory bar that we use Tektronix TDS7104 (1GHZ bandwidth) oscillograph to carry out on the motherboard is tested, and mainly is the magnitude of voltage of test 1.5V.
Through top detailed signal testing, we can very clearly know nonresident portion working condition in the whole blade server, meet some such as internal memory detect less than, system performance reduce, system delays problems such as machine, very clearly the orientation problem key is pointed out in those places, that link, according to phenomenon and voltage tester analysis result, find final problem place and solution then, guarantee the high stability work of whole blade server.
Claims (1)
1, a kind of method of testing based on the blade server memory voltage, it is characterized in that, with the voltage tester quality is guiding, follow the Intel standard, utilize server host board source end that the high-grade signal source of compliant is provided, the stability of testing server memory bar is guaranteed the reliable operation of internal memory, and concrete testing procedure is as follows:
1) according to the standard of Intel internal memory, defines the blade server standard, be specially the characteristic standard of 1.5V voltage and 0.75V reference voltage, comprise voltage ripple, quiescent voltage, output current value;
2) according to of the requirement of Jetec association for memory voltage, go to define the standard of memory bar, be specially the magnitude of voltage of 1.5V;
3) utilize the DDR VTT measurement jig blade server host board of USB interface to carry out the test of voltage, electric current, testing tool uses Tektronix TDS7104,1GHZ bandwidth oscillograph, probe uses Tektronix6245,1.5GHZ bandwidth, carry out voltage ripple, quiescent voltage, the test of output current value;
4) use Tektronix TDS7104,1GHZ bandwidth oscillograph carries out the memory bar test on the motherboard, the magnitude of voltage of test 1.5V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910018504A CN101645028A (en) | 2009-09-04 | 2009-09-04 | Measuring method of memory voltage based on blade server |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910018504A CN101645028A (en) | 2009-09-04 | 2009-09-04 | Measuring method of memory voltage based on blade server |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101645028A true CN101645028A (en) | 2010-02-10 |
Family
ID=41656922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910018504A Pending CN101645028A (en) | 2009-09-04 | 2009-09-04 | Measuring method of memory voltage based on blade server |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101645028A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102411526A (en) * | 2011-12-31 | 2012-04-11 | 曙光信息产业股份有限公司 | Test method of mainboard of blade server |
CN102521097A (en) * | 2011-12-31 | 2012-06-27 | 曙光信息产业股份有限公司 | Method for testing USB (universal serial bus) signals |
CN102841831A (en) * | 2011-06-24 | 2012-12-26 | 鸿富锦精密工业(深圳)有限公司 | System and method for testing server memory |
CN103049360A (en) * | 2012-12-21 | 2013-04-17 | 西安华芯半导体有限公司 | Method for regulating power supply voltage applied to testing of memory module on mainboard |
WO2016201781A1 (en) * | 2015-06-15 | 2016-12-22 | 中兴通讯股份有限公司 | Time sequence test method and apparatus |
CN106776162A (en) * | 2016-11-28 | 2017-05-31 | 郑州云海信息技术有限公司 | A kind of method of signal supervisory instrument and its detection internal memory signal |
CN112485627A (en) * | 2020-11-17 | 2021-03-12 | 苏州浪潮智能科技有限公司 | High-reliability server memory power supply jig and using method thereof |
-
2009
- 2009-09-04 CN CN200910018504A patent/CN101645028A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102841831A (en) * | 2011-06-24 | 2012-12-26 | 鸿富锦精密工业(深圳)有限公司 | System and method for testing server memory |
CN102411526A (en) * | 2011-12-31 | 2012-04-11 | 曙光信息产业股份有限公司 | Test method of mainboard of blade server |
CN102521097A (en) * | 2011-12-31 | 2012-06-27 | 曙光信息产业股份有限公司 | Method for testing USB (universal serial bus) signals |
CN102521097B (en) * | 2011-12-31 | 2014-03-19 | 曙光信息产业股份有限公司 | Method for testing USB (universal serial bus) signals |
CN103049360A (en) * | 2012-12-21 | 2013-04-17 | 西安华芯半导体有限公司 | Method for regulating power supply voltage applied to testing of memory module on mainboard |
CN103049360B (en) * | 2012-12-21 | 2015-08-19 | 西安华芯半导体有限公司 | A kind of method of adjustment being applied to the supply voltage that memory modules is tested on mainboard |
WO2016201781A1 (en) * | 2015-06-15 | 2016-12-22 | 中兴通讯股份有限公司 | Time sequence test method and apparatus |
CN106776162A (en) * | 2016-11-28 | 2017-05-31 | 郑州云海信息技术有限公司 | A kind of method of signal supervisory instrument and its detection internal memory signal |
CN112485627A (en) * | 2020-11-17 | 2021-03-12 | 苏州浪潮智能科技有限公司 | High-reliability server memory power supply jig and using method thereof |
CN112485627B (en) * | 2020-11-17 | 2022-09-20 | 苏州浪潮智能科技有限公司 | High-reliability server memory power supply jig and using method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101645028A (en) | Measuring method of memory voltage based on blade server | |
CN103792498A (en) | Automatic power supply testing method | |
CN102880534A (en) | Testing method for memory voltage of Loongson server motherboard | |
US20130250709A1 (en) | Testing system and testing method thereof | |
CN102928772A (en) | Time sequence testing system and testing method thereof | |
CN102445666A (en) | Laptop battery monitoring system and monitoring method | |
US8624581B2 (en) | Input power measuring device | |
CN201251780Y (en) | Internal memory test tool | |
Cui et al. | A fine-grained component-level power measurement method | |
US10228362B2 (en) | Measurement apparatus | |
CN203164407U (en) | Ultrahigh-frequency partial discharge state detection instrument calibrating device | |
CN101162254B (en) | Cpu slot testing device | |
JP2013108980A (en) | Assistant jig for testing ddr signal | |
CN106328211A (en) | Method and device for realizing timing sequence test | |
CN113496758B (en) | Memory Operation Capability Prediction Method | |
CN102141952B (en) | Device for testing system management bus | |
CN203519782U (en) | Electronic device | |
CN202975264U (en) | Test fixture for performing on-line testing on notebook computer | |
TW201239368A (en) | Auxiliary test apparatus | |
CN202758021U (en) | Electrical performance testing device and system | |
US20150074465A1 (en) | Method and device for efficient trace analysis | |
CN202771809U (en) | Intelligent analyzing equipment for NAND Flash chip | |
CN103000229A (en) | Testing card | |
CN218938940U (en) | I2C bus test fixture | |
CN205229302U (en) | Flexible conducting material plane impedance test equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100210 |