CN101639809B - Method for accessing NAND gate flash memory by application protocol data unit - Google Patents

Method for accessing NAND gate flash memory by application protocol data unit Download PDF

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CN101639809B
CN101639809B CN200810117557A CN200810117557A CN101639809B CN 101639809 B CN101639809 B CN 101639809B CN 200810117557 A CN200810117557 A CN 200810117557A CN 200810117557 A CN200810117557 A CN 200810117557A CN 101639809 B CN101639809 B CN 101639809B
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application protocol
gate flash
data
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protocol data
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向明亮
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Beijing Tongfang Microelectronics Co Ltd
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Abstract

The invention relates to a method for accessing a NAND gate flash memory by an application protocol data unit, which belongs to the technical field of smart card application. The method comprises the following steps: reading a NAND gate flash memory identification number which marks identity information of a visited NAND gate flash memory; reading NAND gate flash memory data which is binary information stored in a main storage area or a redundant area of the NAND gate flash memory; writing data into a storage area of the NAND gate flash memory, wherein the storage area is the main storage area or the redundant area; and erasing a NAND gate flash memory block, wherein the block is the minimum erasable unit of the NAND gate flash memory. Compared with the prior art, the method for accessing the NAND gate flash memory by the application protocol data unit can access to a NAND Flash memory in a high-capacity smart card more rapidly, accurately and conveniently.

Description

A kind of method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories
Technical field
The present invention relates to relate to the smart card application technologies field; Particularly to meet ISO ∕ IEC 7816 standards (ISO ∕ IEC 7816:Identification Cards-Integrated Circuit (s) Cards with Contacts, the method for ISO ∕ IEC 7816: the Application Protocol Data Unit APDU integrated circuit card of identification card-contact-carrying) (Application Protocol Data Unit) visit Sheffer stroke gate flash memory NAND Flash storer.
Background technology
Smart card has obtained extensive application in fields such as telecommunications, traffic, finance, and the user has proposed increasingly high requirement to card performance especially card user storage space.The high capacity intelligence card that on traditional intelligence card controller basis, increases NAND Flash and controller formation thereof has begun to move towards market.
In the prior art; The APDU that meets ISO ∕ IEC 7816 standards is when visiting such as EEPROM (Electrically Erasable Read Only Memory), NOR Flash (rejection gate flash memory); Transmit the offset address (plot is set by independent APDU) of start address or start address of the storage space of required visit with parameter P1 and P2; Parameter P3 transmits visit length (when reading less than 256 bytes (containing), when writing less than 255 bytes (containing)).And NAND Flash necessary nominated bank and column address when visit, it is many that the span of row, column address has all surpassed 256 (0x100).So the address parameter when leaning on byte parameter P1 and P2 to transmit visit NAND Flash is obviously inadvisable.Simultaneously, the length of a basic access unit-page or leaf of NAND Flash (page) is also much in 256 (0x100) byte, and when visiting length greater than 256 bytes, byte parameter P3 can not be once with its transmission.Even the APDU of visit NAND Flash is the extended pattern APDU of ISO ∕ IEC 7816 normalized definitions; Parameter P3 can be 3 byte lengths when second kind of situation (Case 2), but still can not be in same APDU with row, the column address of NAND Flash and read length and pass to smart card.When directly utilizing the APDU of ISO ∕ IEC 7816 normalized definitions to write NAND Flash, also have and read similar problem.
Summary of the invention
In order to solve the problem that exists in the above-mentioned prior art, a kind of method of visiting the Sheffer stroke gate flash memories with Application Protocol Data Unit APDU is provided during the object of the invention.This method can be visited the NAND Flash storer in the smart card with large capacity fast, accurately, easily.
In order to reach the foregoing invention purpose, technical scheme of the present invention realizes as follows:
A kind of method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories, it uses smart card that comprises the Sheffer stroke gate flash memories and the terminal that comprises Application Protocol Data Unit.This method comprises:
Read Sheffer stroke gate flash memories identifier with APDU, this identifier is indicated the identity information of the Sheffer stroke gate flash memories of visiting.The said Application Protocol Data Unit of reading second kind of situation of Sheffer stroke gate flash memories identifier employing ISO ∕ IEC 7816 normalized definitions with APDU.The Sheffer stroke gate flash memories identifier byte number that the parameter P3 indication of this Application Protocol Data Unit need be read.
Read Sheffer stroke gate flash memories data with APDU, said data are the binary message that is stored in Sheffer stroke gate flash memories main storage area or redundant area.The said Application Protocol Data Unit of reading the 4th kind of situation of Sheffer stroke gate flash memories The data ISO ∕ IEC 7816 normalized definitions with APDU.The length of the Sheffer stroke gate flash memories data desired parameters that the Lc field indication of this Application Protocol Data Unit need be read, the data segment of this Application Protocol Data Unit is for row address, the column address of the Sheffer stroke gate flash memories that need read and read length.
Write data to Sheffer stroke gate flash memories memory block with APDU, this memory block is main storage area or redundant area.Said responsible respectively parameter and the biography data of passing of Application Protocol Data Unit that write data to the third situation of two ISO ∕ IEC 7816 normalized definitions of Sheffer stroke gate flash memories memory block employing with APDU.The data segment that passes the parameter Application Protocol Data Unit is row address, column address and the length of the Sheffer stroke gate flash memories that need write; The data segment that passes the data Application Protocol Data Unit is for writing the data of Sheffer stroke gate flash memories smaller or equal to 255 bytes; The parameter P1 and the parameter P2 that pass the data Application Protocol Data Unit are used for representing the sequence number of this Application Protocol Data Unit in sequence; Parameter P1 and parameter P2 can represent clearly whether this Application Protocol Data Unit is the last item in the sequence, smart card with the last item in the sequence as the signal of writing the Sheffer stroke gate flash memories.
Wipe Sheffer stroke gate flash memories piece with APDU, the described least unit that can wipe for the Sheffer stroke gate flash memories.Saidly wipe the Application Protocol Data Unit that Sheffer stroke gate flash memories piece adopts first kind of situation of ISO ∕ IEC 7816 normalized definitions with APDU, the parameter of this Application Protocol Data Unit is used to transmit the block address of Sheffer stroke gate flash memories.
In the method for above-mentioned visit Sheffer stroke gate flash memories; Said when reading Sheffer stroke gate flash memories data with APDU; When institute's read data length is less than or equal to 256 bytes; Smart card success status word of transmission band sense data length after read operation is successful sends to the terminal and by the terminal gets the response application protocol Data Unit, and smart card sends the data of reading by sense data length again, and sends the status word that two bytes sign Application Protocol Data Unit is successfully handled subsequently.Institute's read data length is during greater than 256 bytes; Smart card success status word of transmission band sense data length after the read operation success sends to the terminal and by the terminal continuous several times gets the response application protocol Data Unit; Smart card is receiving that at every turn one by one the data of reading being sent to the terminal in proper order by each 256 bytes after getting the response application protocol Data Unit all sends until data, and smart card is sending the success status word of band remaining data length after each data are sent.If sense data length is not 256 integral multiple, smart card receive the last time get the data of sending behind the response application protocol Data Unit will be less than 256 bytes.
In the method for above-mentioned visit Sheffer stroke gate flash memories; A part of bit representation Application Protocol Data Unit is handled successfully in the success status word of said band sense data length; The length of remaining this sense data in the Sheffer stroke gate flash memories of bit representation, this data length is the length of Sheffer stroke gate flash memories page or leaf to the maximum.A part of bit representation Application Protocol Data Unit is handled successfully in the success status word of band remaining data length; Remaining this secondary data of bit representation is sent the length of residue sense data in the smart card of back; This data length minimum is zero; The length that is Sheffer stroke gate flash memories page or leaf to the maximum, if residue sense data length is zero, success status word that then should band remaining data length is consistent with the status word that the sign Application Protocol Data Unit is successfully handled.
In the method for above-mentioned visit Sheffer stroke gate flash memories, saidly get the Application Protocol Data Unit that the response application protocol Data Unit is the 4th a kind of situation of ISO ∕ IEC 7816 normalized definitions.This Application Protocol Data Unit sends after the success status word of being with sense data length or the success status word of being with remaining data length are received in the terminal.
In the method for above-mentioned visit Sheffer stroke gate flash memories, the step that said use APDU writes data to Sheffer stroke gate flash memories memory block is:
Figure DEST_PATH_IMAGE001
writes data to the operation of Sheffer stroke gate flash memories memory block by the terminal with passing the startup of parameter Application Protocol Data Unit;
Chip Operating System in
Figure 2008101175578100002DEST_PATH_IMAGE002
smart card judges whether the page object that writes is in the invalid block; Be then to show bomp and end, handle successfully otherwise the transmit status word table shows Application Protocol Data Unit;
Whether terminal judges writes length greater than 255 bytes; If get into
Figure 2008101175578100002DEST_PATH_IMAGE004
step, not
Then get into
Figure DEST_PATH_IMAGE005
step;
Figure 574078DEST_PATH_IMAGE004
write need by 255 (0xFF) byte with passing the data Application Protocol Data Unit by the terminal
Go into data transmission to smart card; Write length 255 bytes of successively decreasing simultaneously; Smart card is after every passes the data Application Protocol Data Unit; Then return success status word and return step
Figure 428901DEST_PATH_IMAGE003
if receive the data success, otherwise return bomp and end;
terminal will need write number smaller or equal to 255 bytes with passing the data Application Protocol Data Unit
It is said that transport to smart card, simultaneously in parameter with the position coding tell in the smart card Chip Operating System this serve as the last item in the biography data Application Protocol Data Unit sequence; Smart card is behind correct this Application Protocol Data Unit of reception, and the programming of beginning Sheffer stroke gate flash memories page or leaf if successfully will send the success status word, otherwise shows bomp.
The present invention can make intelligent card read/write device under the prerequisite that does not change its hardware configuration owing to adopted said method, and the APDU that only supports with smart card COS can the interior NAND Flash storer of access card.But the present invention's while is the compatibility of the smart card with large capacity of reinforcing band NAND Flash storer also.Compare with prior art, the present invention is quick more, accurate, convenient to the visit of NAND Flash storer in the smart card with large capacity.
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
Description of drawings
Fig. 1 is a process flow diagram of reading the Sheffer stroke gate flash data among the present invention.
Fig. 2 is the process flow diagram that writes data to Sheffer stroke gate flash memory storage district among the present invention.
Fig. 3 is the communication figure that reads the Sheffer stroke gate flash data in the embodiment of the invention.
Fig. 4 is the communication figure that writes data to Sheffer stroke gate flash memory storage district in the embodiment of the invention.
Embodiment
Referring to Fig. 1 to Fig. 4, realize to total volume 128MB (megabyte), page or leaf size in the smart card being that 2112 bytes (main storage area 2048 bytes, redundant area 64 bytes), block size are the method for 64 pages NAND Flash visit with the terminal that contains APDU:
1) read NAND Flash identifier, adopt the APDU of second kind of situation of ISO ∕ IEC 7816 normalized definitions, the APDU form is 00 7A, 00 01 P3, and wherein the parameter P3 of APDU specifies the required identifier byte number that reads.
APDU:00?7A?00?01?xx
Card response: xx byte N AND Flash identifier
Success status word: 9000
Error definition:
Parameter P3 mistake, status word 6C00;
Read the failure of NAND Flash identifier, status word 6504.
2) read NAND Flash data; Adopt the APDU of the 4th kind of situation of ISO ∕ IEC 7816 normalized definitions; This form of reading APDU is 00 7A 00 02 06 (Lc)+parameter; The length of the NAND Flash data desired parameters that need read of Lc field indication wherein, parameter-definition is NAND Flash row address, column address and reads length.When reading NAND Flash data; When institute's read data length is less than or equal to 256 bytes; The success status word of smart card transmission band sense data length after the read operation success sends to the terminal and by the terminal and gets response APDU; Smart card sends the data of reading by sense data length again, and sends the status word that two bytes sign APDU successfully handles subsequently; Institute's read data length is during greater than 256 bytes; The success status word of smart card transmission band sense data length after the read operation success sends to the terminal and by the terminal continuous several times and gets response APDU; Smart card is receiving that at every turn getting response is sent to the terminal in proper order with the data of reading one by one by each 256 bytes behind the APDU and all sends until data, and smart card is sending the success status word of band remaining data length after each data are sent; If sense data length is not 256 integral multiple, smart card receive the last time get the data of sending behind the response APDU will be less than 256 bytes.A part of bit representation APDU handles successfully in the success status word of band sense data length, the length of this sense data in NAND Flash of remaining bit representation, and this data length is the length of NAND Flash page or leaf to the maximum.A part of bit representation APDU handles successfully in the success status word of band remaining data length, and remaining this secondary data of bit representation is sent the length of residue sense data in the smart card of back, and this data length minimum is zero, is the length of NAND Flash page or leaf to the maximum.If residue sense data length is zero, the status word that then this success status word and sign APDU are successful is consistent.Getting response APDU is the APDU of the 4th kind of situation of ISO ∕ IEC 7816 normalized definitions; This APDU sends after the success status word of being with sense data length or the success status word of being with remaining data length are received in the terminal.
Read data APDU:00 7A 00 02 06 (Lc)+parameters (row address (2 byte), column address (2 byte), length (2 byte))
Success status word: 9xyz, the xyz byte data is read from parameter nominated bank, column address, and the maximal value of xyz is 0x840, and promptly whole page or leaf is read
Error definition:
Read NAND Flash data failure, status word 6504
Get response APDU:00 C0 00 02 00
Card response: xyz≤256 o'clock, xyz byte N AND Flash data (xyz zero clearing simultaneously); Xyz>256 o'clock, 256 byte N AND Flash data (xyz cuts 256 simultaneously)
Success status word: xyz=0 o'clock, 9000; Xyz ≠ 0 o'clock, 9xyz.
3) write data to NAND Flash memory block; Adopt the APDU of two types of the third situations to be responsible for respectively passing parameter and passing data; Wherein passing parameter A PDU form is 00 7C 00 00 06 (Lc)+parameter, and this parameter-definition is with to read NAND Flash data APDU parameter format consistent.Pass data APDU form and be 00 7C, 00 P2 P3+treat write data; The data length of the P3 of this APDU for transmitting when the bar order; Its value from 1 to 255; High 4 place values of the P2 of this APDU be 0x1 represent when bar order be this last item APDU that writes NAND Flash operation, promptly write signal, P2 low 4 then be used for representing when bar APDU in the sequence number that passes data APDU sequence; Increase progressively and its maximal value is 0x9 (because of the single page size is 2112 bytes, maximum can accomplish for 9 times the transmission of 2112 bytes) from 0x1.The step that writes data to Sheffer stroke gate flash memory storage district is:
Figure 2008101175578100002DEST_PATH_IMAGE006
writes data to the operation of NAND Flash memory block by the terminal with passing parameter A PDU startup;
COS in smart card judges whether the page object that writes is in the invalid block; Be then to show bomp and end, handle successfully otherwise the transmit status word table shows APDU;
Whether
Figure 2008101175578100002DEST_PATH_IMAGE008
terminal judges writes length greater than 255 bytes; Be to get into
Figure 355903DEST_PATH_IMAGE009
step, do not get into
Figure 2008101175578100002DEST_PATH_IMAGE010
step;
Figure 116049DEST_PATH_IMAGE009
terminal writes data transmission to smart card by 255 (0xFF) byte with need with passing data APDU; Write length 255 bytes of successively decreasing simultaneously; Smart card is after every passes data APDU; Then return success status word and return step
Figure 320765DEST_PATH_IMAGE008
if receive the data success, otherwise return bomp and end;
Figure 519665DEST_PATH_IMAGE010
terminal will need write data transmission to smart card smaller or equal to 255 bytes with passing data APDU, simultaneously in parameter with tangible position coding tell in the smart card COS this serve as the last item in the biography data APDU sequence; Smart card is behind correct this APDU of reception, and beginning NAND Flash programming if successfully will send the success status word, otherwise shows bomp.
Pass parameter A PDU:00 7C 00 00 06 (Lc)+parameters (row address (2 byte), column address (2 byte), length (2 byte))
Success status word: 9000
Error definition:
Object block is an invalid block, status word 6504
Pass data APDU:00 7C 00 P2 P3+treat write data, length is less than 255 bytes when (containing), P2=0x11, P3=length; Length is during greater than 255 bytes, and P2 begins to be incremented to 0x1y from 0x01, and all treat the biography data APDU bar number that write data is required to y for transmission, and P3 is that length deducts y and multiply by 255 except that last bar passes data APDU, and all the other are 0xFF
Success status word: 9000
Error definition:
Write NAND Flash mistake, status word 6501.
4) wipe NAND Flash piece; Adopt the APDU of first kind of situation of ISO ∕ IEC 7816 normalized definitions; This APDU form is 00 2E P1 P2 00, and wherein parameter P1*256+P2 is the object block address, the NAND Flash row address that can be divided exactly by 0x40 (64).
APDU:00 2E P1 P2 00, wherein parameter P1*256+P2 is the object block address
Success status word: 9000
Error definition:
Wipe failure (unknown cause), status word 6501;
Object block is an invalid block, status word 6504.

Claims (5)

1. method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories, its uses smart card that comprises the Sheffer stroke gate flash memories and the terminal that comprises Application Protocol Data Unit, and this method comprises:
Read Sheffer stroke gate flash memories identifier with APDU, this identifier is indicated the identity information of the Sheffer stroke gate flash memories of visiting; The said Application Protocol Data Unit of reading second kind of situation of Sheffer stroke gate flash memories identifier employing ISO ∕ IEC 7816 normalized definitions with APDU; The Sheffer stroke gate flash memories identifier byte number that the parameter P3 indication of this Application Protocol Data Unit need be read;
Read Sheffer stroke gate flash memories data with APDU, said data are the binary message that is stored in Sheffer stroke gate flash memories main storage area or redundant area; The said Application Protocol Data Unit of reading the 4th kind of situation of Sheffer stroke gate flash memories The data ISO ∕ IEC 7816 normalized definitions with APDU; The length of the Sheffer stroke gate flash memories data desired parameters that the Lc field indication of this Application Protocol Data Unit need be read, the data segment of this Application Protocol Data Unit is for row address, the column address of the Sheffer stroke gate flash memories that need read and read length;
Write data to Sheffer stroke gate flash memories memory block with APDU, this memory block is main storage area or redundant area; Saidly write data to Sheffer stroke gate flash memories memory block with APDU and adopt the Application Protocol Data Unit of the third situation of two ISO ∕ IEC 7816 normalized definitions to be responsible for passing parameter respectively and pass data, the data segment that passes the parameter Application Protocol Data Unit is row address, column address and the length of the Sheffer stroke gate flash memories that need write; The data segment that passes the data Application Protocol Data Unit is for writing the data of Sheffer stroke gate flash memories smaller or equal to 255 bytes; The parameter P1 and the parameter P2 that pass the data Application Protocol Data Unit are used for representing the sequence number of this Application Protocol Data Unit in sequence; Parameter P1 and parameter P2 can represent clearly whether this Application Protocol Data Unit is the last item in the sequence, smart card with the last item in the sequence as the signal of writing the Sheffer stroke gate flash memories;
Wipe Sheffer stroke gate flash memories piece with APDU, the described least unit that can wipe for the Sheffer stroke gate flash memories; Saidly wipe the Application Protocol Data Unit that Sheffer stroke gate flash memories piece adopts first kind of situation of ISO ∕ IEC 7816 normalized definitions with APDU, the parameter of this Application Protocol Data Unit is used to transmit the block address of Sheffer stroke gate flash memories.
2. the method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories according to claim 1; It is characterized in that; Said when reading Sheffer stroke gate flash memories data with APDU; When institute's read data length is less than or equal to 256 bytes; Smart card success status word of transmission band sense data length after read operation is successful sends to the terminal and by the terminal gets the response application protocol Data Unit, and smart card sends the data of reading by sense data length again, and sends the status word that two bytes sign Application Protocol Data Unit is successfully handled subsequently; Institute's read data length is during greater than 256 bytes; Smart card success status word of transmission band sense data length after the read operation success sends to the terminal and by the terminal continuous several times gets the response application protocol Data Unit; Smart card is receiving that at every turn one by one the data of reading being sent to the terminal in proper order by each 256 bytes after getting the response application protocol Data Unit all sends until data, and smart card is sending the success status word of band remaining data length after each data are sent; If sense data length is not 256 integral multiple, smart card receive the last time get the data of sending behind the response application protocol Data Unit will be less than 256 bytes.
3. the method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories according to claim 2; It is characterized in that; A part of bit representation Application Protocol Data Unit is handled successfully in the success status word of said band sense data length; The length of remaining this sense data in the Sheffer stroke gate flash memories of bit representation, this data length is the length of Sheffer stroke gate flash memories page or leaf to the maximum; A part of bit representation Application Protocol Data Unit is handled successfully in the success status word of band remaining data length; Remaining this secondary data of bit representation is sent the length of residue sense data in the smart card of back; This data length minimum is zero; The length that is Sheffer stroke gate flash memories page or leaf to the maximum, if residue sense data length is zero, success status word that then should band remaining data length is consistent with the status word that the sign Application Protocol Data Unit is successfully handled.
4. the method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories according to claim 3; It is characterized in that, saidly get the Application Protocol Data Unit that the response application protocol Data Unit is the 4th a kind of situation of ISO ∕ IEC 7816 normalized definitions; This Application Protocol Data Unit sends after the success status word of being with sense data length or the success status word of being with remaining data length are received in the terminal.
5. the method with Application Protocol Data Unit APDU visit Sheffer stroke gate flash memories according to claim 4 is characterized in that, the step that said use APDU writes data to Sheffer stroke gate flash memories memory block is:
Figure 2008101175578100001DEST_PATH_IMAGE002
writes data to the operation of Sheffer stroke gate flash memories memory block by the terminal with passing the startup of parameter Application Protocol Data Unit;
Chip Operating System in
Figure 2008101175578100001DEST_PATH_IMAGE004
smart card judges whether the page object that writes is in the invalid block; Be then to show bomp and end, handle successfully otherwise the transmit status word table shows Application Protocol Data Unit;
Whether terminal judges writes length greater than 255 bytes; If get into
Figure 2008101175578100001DEST_PATH_IMAGE008
step, otherwise get into step;
writes data transmission to smart card by 255 (0xFF) byte with need with passing the data Application Protocol Data Unit by the terminal; Write length 255 bytes of successively decreasing simultaneously; Smart card is after every passes the data Application Protocol Data Unit; Then return success status word and return step
Figure 735450DEST_PATH_IMAGE006
if receive the data success, otherwise return bomp and end;
Figure 515188DEST_PATH_IMAGE010
terminal will need write data transmission to smart card smaller or equal to 255 bytes with passing the data Application Protocol Data Unit, simultaneously in parameter with the position coding tell in the smart card Chip Operating System this serve as the last item in the biography data Application Protocol Data Unit sequence; Smart card is behind correct this Application Protocol Data Unit of reception, and the programming of beginning Sheffer stroke gate flash memories page or leaf if successfully will send the success status word, otherwise shows bomp.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1648883A (en) * 2005-02-04 2005-08-03 威盛电子股份有限公司 Method and its device for driving flash memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1648883A (en) * 2005-02-04 2005-08-03 威盛电子股份有限公司 Method and its device for driving flash memory

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