CN101635433B - Slow light edge-emitting laser of photonic crystal chirp waveguide - Google Patents
Slow light edge-emitting laser of photonic crystal chirp waveguide Download PDFInfo
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Abstract
The invention discloses a slow light edge-emitting laser of photonic crystal chirp waveguide, which consists of an air hole type photonic crystal structure manufactured on a semiconductor chip. The structure is divided into three parts, wherein the left part has a slow light waveguide structure and is used for generating laser; the right end has an output waveguide structure, and the diameters of two adjacent rows of air holes inside the output waveguide structure are slightly smaller than the diameters of air holes of peripheral photonic crystals; and a chirp waveguide structure is formed between the slow light waveguide structure and the output waveguide structure, and the diameters of two adjacent rows of air holes inside the chirp waveguide structure gradually reduce from the same size as those of the air holes of the slow light waveguide structure to the same size as those of the diameters of the air holes of the output waveguide structure. The edge-emitting laser provided by the invention adopts a band edge slow-light mode of the photonic crystal chirp waveguide, breaks through the bottleneck that the volume of a defective cavity mode is limited, and uses the chirp waveguide structure to efficiently convert the slow light mode into a normal group velocity waveguide module so as to greatly improve the output efficiency of the edge-emitting laser.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, particularly relate to the high-power slow light edge-emitting laser of photonic crystal chirp waveguide of a kind of suspension sheet-type.
Background technology
Photonic crystal since its notion is suggested, has been subjected to people's attention always.(Photonic Band Gap PBG) makes it that special status be arranged in the application of laser to its exclusive " photon band gap ", and it can suppress spontaneous radiation and produce the probability that frequency is in the photon in the band gap.After adding certain defective in the photonic crystal, the very narrow defect state of frequency range can appear in the band gap, spontaneous radiation produces the probability that frequency is in the photon of defect state and is not suppressed like this, and near the also probability of oriented this frequency translation of the spontaneous radiation this frequency has strengthened the spontaneous radiation of defect state.By design to photonic crystal, the sharp radio frequency rate of laser can be set in the defect state frequency, can improve the spontaneous radiation factor of laser so greatly, obtain the laser of extremely low threshold value.Simultaneously, have compact dimensions, be easy to advantages such as integrated with respect to traditional devices based on the multiple active and passive device of photonic crystal, this makes photonic crystal become the important candidate scheme of following photon integrated chip.
For photon chip, it is integrated each device on two-dimensional flat plate, need light signal at dull and stereotyped internal communication, point defect microcavity surface-emitting laser can be used as the light source of the optical information propagation of chip and chip chamber, but unsatisfactory as the light source of dull and stereotyped integrated optical circuit, needs are a kind of can be in the LASER Light Source of dull and stereotyped internal illumination.And the bright dipping from the side of linear defect wave-guide type edge-emitting laser can directly enter in the integrated passive device via waveguide, and therefore the realization approach as photon integrated circuit light source has important value.
The waveguide type edge-emitting laser has two kinds of implementation methods at present.First kind is microcavity-waveguide-coupled type.It utilizes the evanescent wave of light field in the point defect micro-cavity laser and contiguous waveguide to be coupled, thereby realization laser is exported along wave guide direction propagation and side direction.The coupling efficiency of microcavity-waveguide can reach 80%, as document: " Photonic crystal nanolaser monolithically integrated withpassive waveguide for effective light extraction ", Kengo Nozaki, HidekiWatanabe, and Toshihiko Baba, Appl.Phys.Lett., 920211082008, even reach 90%, as document: " Efficient photonic crystal cavity-waveguide coupler ", AndreiFaraon, Edo Waks, Dirk Englund, Llya Fushman, and Jelena
, Appl.Phys.Lett., 900731022007.Though this scheme can realize higher microcavity-waveguide-coupled efficient, but its laser is to be produced by the very little microcavity of mode volume, is difficult to obtain higher gain, and this has limited output power of laser greatly.
The implementation method of another kind of waveguide edge-emitting laser is a photon crystal wave-guide band edge laser.Utilize the dispersion curve of photon crystal wave-guide to have the characteristic of low group velocity at the band edge place, in waveguide, produce slow light effect.The slower rays pattern produces laser at wave guide resonance, as document: " Line-defect-waveguidelaser integrated with a point defect in a two-dimensional photonic crystal slab ", Atsushi Sugitatsu, Takashi Asano and Susumu Noda, APL, Vol.86,171106,2005.Quality factor with vertical direction is all very high in the horizontal direction owing to this band edge resonance mode, and this has caused the power of laser limit emission output extremely low.
The limit of above-mentioned two kinds of schemes emission laser output power all is subject to separately laser generation mechanism and lower, and this light source applications for the photon chip in future is very big bottleneck.Therefore, realize that a kind of large power high efficiency edge-emitting laser becomes the task of top priority.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to overcome the lower shortcoming of existing photonic crystal edge-emitting laser power output, and a kind of high-power slow light edge-emitting laser of photonic crystal chirp waveguide is provided, to improve the power output of edge-emitting laser.
(2) technical scheme
In order to achieve the above object, the technical scheme taked of the present invention is as follows:
A kind of slow light edge-emitting laser of photonic crystal chirp waveguide, this edge-emitting laser is made of the air pass photon crystal structure that is made on the semi-conducting material, is divided into three parts, and left-hand component is the slow optical wave guide structure, is used for producing laser; Right-hand member is an output waveguide structure, and the diameter of this output waveguide structure two adjacent rows of air holes inside all is slightly less than the airport diameter of photonic crystal on every side; In the middle of slow optical wave guide structure and the output waveguide structure is the chirp waveguide structure, the diameter of the inboard adjacent two line space pores of this chirp waveguide structure is from identical with slow optical wave guide structural gap bore dia and diminish gradually, up to identical with the airport diameter of output waveguide structure.
In the such scheme, described semi-conducting material is InGaAsP/InP material, GaAs/AlGaAs material or GaN/AlGaN material; The described air pass photon crystal structure that is made on the semi-conducting material is a triangular crystal lattice air pass photon crystal structure.
In the such scheme, described slow optical wave guide structure is removed the single linear defect wave-guide formation that delegation's airport forms by in intact air pass photon crystal structure.
In the such scheme, described slow optical wave guide structure uses the slow light effect of waveguide to produce laser, and laser frequency is near the band edge of the guided wave mode of slow optical wave guide.
In the such scheme, described output waveguide structure is for removing the line defect photonic crystal waveguide structure of delegation's airport, and the diameter of the adjacent airport in the both sides of this line defect photonic crystal waveguide structure is slightly less than the diameter of photonic crystal airport.
In the such scheme, in the described output waveguide structure, the pattern of the laser of transmission is the non-slower rays pattern with normal group velocity.
In the such scheme, described chirp waveguide structure is for removing the line defect photonic crystal waveguide structure of delegation's airport, and the diameter of the adjacent airport in the both sides of this linear defect wave-guide is gradient to the diameter of the airport of output waveguide structure from slow optical wave guide structural gap bore dia.
In the such scheme, in the described chirp waveguide structure, the pattern of laser is the guided wave mode of normal group velocity by low group velocity slower rays pattern effective conversion.
In the such scheme, this edge-emitting laser emitting laser is by output waveguide structure, from the cleavage limit outgoing of material side.
In the such scheme, the output wavelength of this edge-emitting laser is at infrared band, wave-length coverage at 0.7 micron to 1.7 micrometer ranges.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, slow light edge-emitting laser of photonic crystal chirp waveguide provided by the invention adopts the slow light effect of photon crystal wave-guide to produce zlasing mode, has bigger active region with respect to micro-cavity laser, can obtain higher gain, thereby improve laser power.Adopt this chirp waveguide design of the present invention, can obtain the laser of big power output, its effective pumping threshold power is 46 μ W, and power output reaches 10 μ W, and more original common slower rays laser output power improves 214 times.
2, slow light edge-emitting laser of photonic crystal chirp waveguide provided by the invention can be realized the side direction limit emission of laser, makes the coupling of its easier realization and passive wave guide device export, and becomes the perfect light source of photonic crystal integrated chip.
3, slow light edge-emitting laser of photonic crystal chirp waveguide provided by the invention adopts the chirp waveguide design, makes the slower rays zlasing mode be converted into the normal guided wave mode of group velocity, conversion efficiency height;
4, slow light edge-emitting laser of photonic crystal chirp waveguide provided by the invention, the side mode suppression ratio of laser can reach 37dB, realizes good unimodular property.
Description of drawings
Fig. 1 is the structural representation of high-power slow light edge-emitting laser of photonic crystal chirp waveguide among the present invention;
Fig. 2 be high-power slow light edge-emitting laser of photonic crystal chirp waveguide among the present invention being with of slow optical wave guide (solid line) and output waveguide can be with (dotted line) schematic diagram;
Fig. 3 is the simulation result schematic diagram of the output light field intensity contrast of slow light edge-emitting laser of photonic crystal chirp waveguide and common slow optical wave guide laser among the present invention;
Fig. 4 is the ESEM of the high-power slow light edge-emitting laser of photonic crystal chirp waveguide produced among a present invention photo in kind;
Fig. 5 is the Laser Measurement frequency spectrum of the edge-emitting laser produced among the present invention;
Fig. 6 is the limit launch spot that measures of the edge-emitting laser produced among the present invention;
Fig. 7 is the threshold property curve of the laser produced among the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Please refer to Fig. 1, Fig. 1 is the structural representation of high-power slow light edge-emitting laser of photonic crystal chirp waveguide among the present invention.This laser is divided into three parts based on the design of airport photonic crystal triangular crystal lattice, and left-hand component is the slow optical wave guide structure, is used for producing laser.This part is made of the single linear defect wave-guide that removal delegation airport in intact photonic crystal forms.Right-hand member is an output waveguide structure.In this part, the diameter of waveguide two adjacent rows of air holes inside all is designed to be slightly less than the aperture of photonic crystal on every side.In the middle of slow optical wave guide structure and the output waveguide structure is the chirp waveguide structure, and the diameter of the inboard adjacent two line space pores of its waveguide diminishes gradually from identical with the slow optical wave guide structure, up to identical with the diameter of output waveguide structure.
The guided wave of waveguide can be with characteristic to be shown in Fig. 2.Solid black lines is represented the guided wave mode of slow optical wave guide among the figure.This guided wave mode is even mould, and under light cone, therefore can exist in dull and stereotyped inside and propagate in waveguide.At the band edge place of this pattern (shown in the black level dotted line), dispersion curve is very smooth, and slope approaches zero.Group velocity formula v according to light wave
g=d ω/dk, the light wave in this frequency range has lower group velocity, is referred to as slower rays.Slower rays and common guided wave mode maximum different are that low group velocity causes it can't normal propagation in waveguide, because Prague (Bragg) scattering of photonic crystal, slower rays can form the resonance in the similar F-P chamber in waveguide.The pattern of resonance has high photon state density owing to be in the slower rays place of photon crystal wave-guide band edge, and strengthens the interaction of light and active medium, when obtaining can to produce laser after the abundant gain.
Though slow light effect can bring enough gains and produce laser, but because laser frequency is in the slower rays scope, group velocity is lower, produces the very strong light and the interaction of material simultaneously, cause light in waveguide by strong absorption, limited effective output of laser greatly.The output waveguide of laser is used for addressing this problem.The guided wave mould of output waveguide can be with shown in the black dotted lines among Fig. 2.Diminishing of aperture makes the effective refractive index of waveguide region increase, thereby guided wave mode moves to the low frequency direction.This makes the frequency of slower rays pattern correspondence enter non-slower rays zone in output waveguide, and light wave has had normal propagation velocity again, so the resonance disappearance, and power output is enhanced.
Between slow optical wave guide structure and output waveguide structure the chirp waveguide structure, shown in the rectangular area in the accompanying drawing 1.Because output waveguide structure two adjacent rows of air holes inside and slow optical wave guide structure have than big-difference, if directly two sections waveguides are connected, the sudden change of structure can cause the sudden change of field, resonance to the slow optical wave guide structure destroys to some extent on the one hand, increase in scattering at the interface on the other hand, strengthened loss.And adopt the chirp waveguide structure of aperture gradual change, can make the aperture smooth variation, mode field also from the slower rays pattern mild carry out the transition to guided wave mode.The group velocity of light wave can significantly improve the light output efficiency of laser so also by the low group velocity tapering of the slower rays normal group velocity to the guided wave mould.
Fig. 3 is the simulation result schematic diagram of the output light field intensity contrast of slow light edge-emitting laser of photonic crystal chirp waveguide and common slow optical wave guide laser among the present invention.To the expansion of waveguide both sides, this is the obvious characteristic of slower rays pattern to pattern in the common slow optical wave guide more.Occurred node in waveguide, this explanation has formed tangible resonance.Most of light wave in waveguide, is exported very little by local.And in chirp waveguide edge-emitting laser structure provided by the invention, resonance has also taken place in the slow optical wave guide structure, and the expansion of field to the waveguide both sides in tapered waveguide and the output waveguide obviously weakens, and the guided wave mode that has carried out the transition to normal group velocity is described, output obviously strengthens.
Fig. 4 is the ESEM of the high-power slow light edge-emitting laser of photonic crystal chirp waveguide produced among a present invention photo in kind.By using electron beam lithography and inductively coupled plasma dry etching technology, on the InGaAsP/InP material, produce photonic crystal pattern, produce the photonic crystal edge-emitting laser spare of suspension thin-slab structure at last by the wet method selective etching.The lattice constant of triangular crystal lattice is a=420nm, and the airport diameter of photonic crystal is d=260nm, and the adjacent vacant hole diameter of output waveguide is smaller, is d '=190nm.The length of tapered waveguide part is 25 cycles, and the inboard airport diameter of waveguide fades to 190nm from 260nm.
Fig. 5 is the Laser Measurement frequency spectrum of the edge-emitting laser produced among the present invention.Adopt the pumping of 980nm laser pulse, excitation wavelength is 1576nm, and side mode suppression ratio reaches 37dB.Fig. 6 is the limit launch spot that measures of the edge-emitting laser produced among the present invention, and visible laser is along output waveguide bright dipping from the side.Fig. 7 is the threshold property curve of the laser produced among the present invention.In duty ratio is under 0.075% condition, and effectively threshold power is 46uW, and power output can reach 10uW, compares common slow optical wave guide laser and has improved 214 times.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. slow light edge-emitting laser of photonic crystal chirp waveguide, it is characterized in that this edge-emitting laser is made of the air pass photon crystal structure that is made on the semi-conducting material, is divided into three parts, left-hand component is the slow optical wave guide structure, is used for producing laser; Right-hand member is an output waveguide structure, and the diameter of this output waveguide structure two adjacent rows of air holes inside all is slightly less than the airport diameter of photonic crystal on every side; In the middle of slow optical wave guide structure and the output waveguide structure is the chirp waveguide structure, the diameter of the inboard adjacent two line space pores of this chirp waveguide structure is from identical with slow optical wave guide structural gap bore dia and diminish gradually, up to identical with the airport diameter of output waveguide structure.
2. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that described semi-conducting material is InGaAsP/InP material, GaAs/AlGaAs material or GaN/AlGaN material; The described air pass photon crystal structure that is made on the semi-conducting material is a triangular crystal lattice air pass photon crystal structure.
3. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that described slow optical wave guide structure is removed the single linear defect wave-guide formation that delegation's airport forms by in intact air pass photon crystal structure.
4. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that described slow optical wave guide structure uses the slow light effect of waveguide to produce laser, laser frequency is near the band edge of the guided wave mode of slow optical wave guide.
5. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that, described output waveguide structure is for removing the line defect photonic crystal waveguide structure of delegation's airport, and the diameter of the adjacent airport in the both sides of this line defect photonic crystal waveguide structure is slightly less than the diameter of photonic crystal airport.
6. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that in the described output waveguide structure, the pattern of the laser of transmission is the non-slower rays pattern with normal group velocity.
7. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that, described chirp waveguide structure is for removing the line defect photonic crystal waveguide structure of delegation's airport, and the diameter of the adjacent airport in the both sides of this linear defect wave-guide is gradient to the diameter of the airport of output waveguide structure from slow optical wave guide structural gap bore dia.
8. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that in the described chirp waveguide structure, the pattern of laser is the guided wave mode of normal group velocity by low group velocity slower rays pattern effective conversion.
9. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that this edge-emitting laser emitting laser is by output waveguide structure, from the cleavage limit outgoing of material side.
10. according to the described slow light edge-emitting laser of photonic crystal chirp waveguide of claim 1, it is characterized in that the output wavelength of this edge-emitting laser is at infrared band, wave-length coverage at 0.7 micron to 1.7 micrometer ranges.
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| CN102760955B (en) * | 2011-04-29 | 2015-02-04 | 深圳光启高等理工研究院 | Metamaterial capable of diffusing electromagnetic wave |
| CN103219650B (en) * | 2013-03-29 | 2014-11-26 | 中国科学院半导体研究所 | Low divergence angle near diffraction limit output chirp photonic crystal edge-emitting laser array |
| CN103513332B (en) * | 2013-10-25 | 2016-04-27 | 宁波大学 | A kind of photonic crystal slab waveguide |
| CN104466674B (en) * | 2014-12-03 | 2017-07-14 | 中国科学院长春光学精密机械与物理研究所 | Integrated conjunction beam laser and preparation method thereof on piece based on photonic crystal Y waveguide |
| CN104466323B (en) * | 2014-12-22 | 2017-06-06 | 淮阴师范学院 | The unidirectional marginality transmission method of magnetic photonic crystal self-conductance based on surface modification |
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