CN101632146A - Magnetic sensor module and piston position detecting device - Google Patents
Magnetic sensor module and piston position detecting device Download PDFInfo
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- CN101632146A CN101632146A CN200880005914A CN200880005914A CN101632146A CN 101632146 A CN101632146 A CN 101632146A CN 200880005914 A CN200880005914 A CN 200880005914A CN 200880005914 A CN200880005914 A CN 200880005914A CN 101632146 A CN101632146 A CN 101632146A
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Abstract
A magnetic sensor module is provided with a semiconductor substrate having an integrated circuit for performing switching operation; a magnetoresistive element, which is arranged on one surface of the semiconductor substrate and has a magnetically sensitive direction in a direction along the one surface; and a bias magnetic field applying member, which is arranged on the semiconductor substrate, on a surface parallel to the one surface. The bias magnetic field applying member is magnetized in a direction along the surface whereupon the bias magnetic field applying member is arranged. In a status where no external magnetic field is applied, the bias magnetic field applying member applies a bias magnetic field in a direction along the one surface whereupon the magnetoresistive element is arranged.
Description
Technical field
The piston position detecting device that the present invention relates to magnetic sensor module and detect the piston position in the cylinder barrel in detail, relates to detect from the outside of cylinder barrel the piston position detecting device of the piston position in the fluid pressure cylinders such as oil cylinder, cylinder.
The application advocates the special special priority of being willing to 2007-189692 number of patent application of being willing to 2007-045295 number and proposing in Japan on July 20th, 2007 of patent application that proposes in Japan on February 26th, 2007, and here cites its content.
Background technology
Magnetic Sensor is the transducer that detects the height of magnetic flux density, is used as the proximity transducer that opens and closes transducer and use near magnetic such as iron plate.Up to now Magnetic Sensor is that Hall element is used as electromagnetic conversion element mostly.When Magnetic Sensor that will be up to now uses as proximity transducer, be the formation (for example refer to Patent Document 1～3, non-patent literature 1～3) as Figure 13 A, Figure 13 B, Figure 14 mostly.
In Figure 13 A, Figure 13 B, the Magnetic Sensor that uses as proximity transducer has following formation.Promptly, as shown in FIG. 13A, on the direction vertical, run through the mode of Hall element 2, Hall element 2 distributed magnets 1 relatively according to magnetic flux 4 with the length direction of the Hall element Hall IC of switching function (or comprise) 2.When magnetic 3 during, shown in Figure 13 B, because magnetic flux 4 absorbed by magnetic 3, so be applied to the density step-down of the magnetic flux of Hall element 2 near this Magnetic Sensor.Therefore, change, can detect the approaching of magnetic 3 by detecting this output.And under the situation of the Hall IC that comprises switching function, as threshold value, can access with this threshold value is output after the counter-rotating on border with the magnetic flux density of regulation.
And as shown in figure 14, the action of the Magnetic Sensor that uses as proximity transducer also is identical.In this Magnetic Sensor, relatively Hall element 6 is provided with magnet 5, so that magnetic flux 8 runs through Hall element 6 on the direction vertical with the length direction of the Hall element Hall IC of switching function (or comprise) 6.This Magnetic Sensor can access the output corresponding with the degree of closeness of magnetic 7 to be changed.
But, in the Magnetic Sensor that uses existing Hall element, there is following problem:
(1) because Hall element 2,6 and magnet 1,5 so paired structures are indispensable, therefore need a plurality of parts, and, make the size of Magnetic Sensor become big (for example patent documentation 2).Particularly in the formation of Figure 13 A, Figure 13 B, between magnet 1 and Hall element 2, need to be used to the slit S (for example patent documentation 2) that magnetic 3 is passed through.
(2) need position (for example preventing countermeasure, patent documentation 3) to magnet and the Hall element that is used to apply bias magnetic field as deviation.
(3) common, because the deviation of magnet characteristic is big, design so need estimate the deviation of magnet characteristic (for example preventing countermeasure, patent documentation 3) as deviation.
The structure of existing piston position detecting device is (for example patent documentation 4) as shown in figure 15.Magnet 101 is arranged on the piston 100, and Magnetic Sensor 103 (this Magnetic Sensor 103 does not have magnet) is arranged on the outside of the cylinder barrel 102 that is made of nonmagnetic substance.By moving of piston 100, magnet 101 is during near Magnetic Sensor 103, and Magnetic Sensor 103 detects magnet 101, can detect the position of piston 100.
But in existing piston position detecting device as described above, because magnet need be set in piston, so the complex structure of piston, manufacturing process also increases.
The characteristic that need consider magnet and Magnetic Sensor designs cylinder body.Particularly, according to magnetic flux towards perpendicular to or be parallel to the length direction of cylinder barrel, it is different needing to use which Magnetic Sensor in the Magnetic Sensor of the Magnetic Sensor of Hall element or magnetoresistive element (MR element).And, under the situation of magnetoresistive element, need the coupling magnetic flux towards with the sense magnetic direction of Magnetic Sensor.And, on the contrary under the situation that Magnetic Sensor is determined, should be noted that magnet magnetic pole towards.And owing to magnet is arranged in the piston, institute is so that piston and cylinder barrel chap.
Patent documentation 1: Japanese kokai publication sho 61-172075 communique
Patent documentation 2: Japanese kokai publication hei 6-76706 communique
Patent documentation 3: TOHKEMY 2004-186040 communique
Patent documentation 4: No. 2616783 communique of Japan Patent
Non-patent literature 1: hillside plot Gang is good, " the random れ In of magnetic Games オ Application オ Off, the high い noncontact of the タ イ コ エ anti-Hot Ga of レ Ga closely meets ス イ Star チ ", [online], put down into day, day Longitude エ レ Network ト ロ ニ Network ス in 18 year October 5, [putting down into retrieval on February 6th, 19], イ Application タ one ネ Star ト＜URL:http: //techon.nikkeibp.co.jp/article/NEWS/20061005/121974/ 〉
Non-patent literature 2: " the iron plate closely meets ス イ Star チ ME-301 ", [online], [putting down into retrieval on February 6th, 19], the エ ヌ エ of Co., Ltd. one, イ Application タ one ネ Star ト＜URL:http: //www.na-web.co.jp/products/me/pr_02_21.html 〉
Non-patent literature 3: in military Zhang Tailang, modern wild elegant people, friend normal Kaoru, Yong Ping exert oneself, preceding Tian Feng, " MR セ Application サ モ ジ ユ one Le ", NEC skill Reported, Japanese Electricity mood Co., Ltd.,, the 51st volume, No. 4,106-110 Page in 1998
Summary of the invention
The present invention In view of the foregoing makes, and its purpose is to provide a kind of can apply the magnetic sensor module that parts (for example magnet) are that position and deviation characteristic is few to bias magnetic field accurately and easily.And another purpose of the present invention is to provide a kind of and needn't disposes bias magnetic field in piston and apply parts, can make piston structure, make the simple piston position detecting device that becomes.
In order to address the above problem, the invention provides a kind of magnetic sensor module, it comprises: semiconductor substrate, it has the integrated circuit that carries out switch motion; Magnetoresistive element, it is arranged on the face of this semiconductor substrate, and has the sense magnetic direction on the direction of this face; Bias magnetic field applies parts, it is arranged on the described semiconductor substrate and is configured on the face parallel with a described face, described bias magnetic field applies parts, be magnetized along having disposed on described the direction that this bias magnetic field applies parts, do not applying under the state of external magnetic field, this bias magnetic field applies parts and applying bias magnetic field on the direction of a described face that is provided with described magnetoresistive element.
In magnetic sensor module of the present invention, it is paste magnet or thin film magnet that preferred described bias magnetic field applies parts.
Preferably, described integrated circuit compares the output voltage of described magnetoresistive element and the threshold value of regulation, according to result relatively, the output voltage of the described magnetoresistive element of output expression is the signal greater than the high level state of the threshold value of described regulation, or the output voltage of the described magnetoresistive element of output expression is the signal less than the low level state of the threshold value of described regulation.
Preferably, described bias magnetic field applies parts and is arranged on another face as the opposition side of a face of described semiconductor substrate.
Piston position detecting device of the present invention comprises: cylinder barrel, and it is made of nonmagnetic substance; Piston, its at least a portion is made of magnetic material, disposes in the mode of sliding on the inner peripheral surface of described cylinder barrel; Magnetic Sensor, it is configured on the outer peripheral face of described cylinder barrel, has bias magnetic field and applies parts.
Preferred in the present invention, described Magnetic Sensor possesses the integrated circuit that carries out switch motion according to the intensity of magnetic flux density at least, and it is the magnet that is made of film that described bias magnetic field applies parts, is configured in the top, following or inner of described integrated circuit.
Preferred in the present invention, described Magnetic Sensor has semiconductor substrate and is arranged on the face of this semiconductor substrate and at the magnetoresistive element that has the sense magnetic direction on the direction of this face, it is magnet that described bias magnetic field applies parts, this magnet is arranged on the described semiconductor substrate and is configured on the face parallel with a described face and is being magnetized on described the direction that has disposed this magnet, do not applying under the state of external magnetic field, this magnet is applying bias magnetic field on the direction of a described face that is provided with described magnetoresistive element.
According to the present invention, apply the integrated structure formation magnetic sensor module that parts constitute by using by magnetoresistive element (MR element), semiconductor substrate (MR switch) and bias magnetic field with the integrated circuit (IC) that carries out switch motion, have the following advantages:
(1) covers in the magnetic sensor module by bias magnetic field being applied parts, form integrated structure, do not need independent bias magnetic field to apply parts.
(2) owing to the direction that applies magnetic field is the direction parallel with the face of semiconductor substrate, so can make the magnetic sensor module miniaturization.
(3) owing to can use and form bias magnetic field with the high technology of semiconductor technology compatibility and apply parts, so do not need bias magnetic field is applied parts and semiconductor substrate positions.And, apply distance between parts and the magnetoresistive element owing to can adjust bias magnetic field accurately, so can reduce the deviation in the magnetic field that is applied.
And, according to the present invention, be that magnetic material and Magnetic Sensor possess bias magnetic field and apply parts by at least a portion with piston, needn't in piston, dispose bias magnetic field and apply parts.Based on this, install the Magnetic Sensor except considering magnetic pole that bias magnetic field applies parts, can also put magnetic field and apply parts piston and cylinder barrel are attenuated by in piston, being unworthy of offset.Its result, the present invention can provide the structure that makes piston and the manufacturing simple piston position detecting device that becomes.
Description of drawings
Fig. 1 is the summary sectional view of an example constituting of the summary of expression magnetic sensor module of the present invention.
Fig. 2 is the vertical view of an example of the formation of expression magnetoresistive element.
Fig. 3 A is the figure that schematically is illustrated in not the situation in magnetic field under the state of external magnetic field that magnetic sensor module shown in Figure 1 is applied.
Fig. 3 B is the curve chart that the output under the state that magnetic sensor module shown in Figure 1 is not applied the external magnetic field schematically is described.
Fig. 4 A represents that schematically magnetic is from the face side of the semiconductor substrate figure near the situation in magnetic field under the state of magnetic sensor module shown in Figure 1.
Fig. 4 B illustrates that schematically magnetic is from the face side of the semiconductor substrate curve chart near the output under the state of magnetic sensor module shown in Figure 1.
Fig. 5 A schematically is illustrated in magnetic from the rear side of the semiconductor substrate figure near the situation in magnetic field under the state of magnetic sensor module shown in Figure 1.
Fig. 5 B illustrates that schematically magnetic is from the rear side of the semiconductor substrate curve chart near the output under the state of magnetic sensor module shown in Figure 1.
Fig. 6 A schematically represents magnetic sensor module shown in Figure 1 is fixed on the substrate via projection and constitutes the sectional view of the situation of Magnetic Sensor.
Fig. 6 B schematically is illustrated in magnetic sensor module shown in Figure 1 is fixed on the substrate via projection and constitutes the figure of the situation in magnetic field under the state of Magnetic Sensor.
Fig. 7 is the sectional view of an example of expression piston position detecting device of the present invention.
Fig. 8 is the sectional view of another example of expression piston position detecting device of the present invention.
Fig. 9 extracts the sectional view that the part of Magnetic Sensor of the device of pie graph 7,8 is represented out.
Figure 10 is the vertical view of an example of the formation of expression magnetoresistive element.
Figure 11 A is illustrated in the figure that Magnetic Sensor is not applied the situation in magnetic field under the state of external magnetic field.
Figure 11 B is not illustrated in Magnetic Sensor is applied the curve chart that applies the relation of magnetic field and voltage under the state of external magnetic field.
Figure 12 A is illustrated in to make the figure of magnetic near the situation in magnetic field under the state of Magnetic Sensor.
Figure 12 B is illustrated in to make the curve chart that applies the relation of magnetic field and voltage under the state of magnetic near Magnetic Sensor.
Figure 13 A is the skeleton diagram of an example of the existing Magnetic Sensor of expression.
Figure 13 B is the skeleton diagram of an example of the existing Magnetic Sensor of expression.
Figure 14 is the skeleton diagram of other examples of the existing Magnetic Sensor of expression.
Figure 15 is the sectional view of an example of expression existing piston position detecting device.
The reference numeral explanation
The 10-magnetic sensor module; The 11-semiconductor substrate; Face of 11a-; Another face of 11b-; The 12-bias magnetic field applies parts; 13-magnetoresistive element (MR element); The 23-Magnetic Sensor; The 31-piston position detecting device; The 32-cylinder barrel; The 33-piston; The 34-magnetic material; The 40-Magnetic Sensor; The 41-semiconductor substrate; The 42-magnetoresistive element; The 43-bias magnetic field applies parts; The 44-thin film magnet; The 47-magnetic sensor module
Embodiment
Below, with reference to Fig. 1～Fig. 6 B the magnetic sensor module based on first execution mode of the present invention is described.
In addition, this magnetic sensor module 10 is fixed on the flexible printing substrate circuit substrates 22 such as (FPC) by projection etc. for example as described later, constitutes Magnetic Sensor 23.
Fig. 1 is the summary sectional view of an example constituting of the summary of expression magnetic sensor module 10 of the present invention.Fig. 2 is the vertical view of an example of the formation of expression magnetoresistive element 13.Fig. 3 A is the figure that schematically is illustrated in not the situation in magnetic field 14 under the state of external magnetic field that magnetic sensor module shown in Figure 1 10 is applied, and Fig. 3 B is the curve chart that the output under this state schematically is described.Fig. 4 A schematically represents magnetic 20 from the face side of the semiconductor substrate figure near the situation in magnetic field 15 under the state of magnetic sensor module 10 shown in Figure 1, and Fig. 4 B is the curve chart that the output under this state schematically is described.Fig. 5 A schematically represents magnetic 20 from the rear side of the semiconductor substrate figure near the situation in magnetic field 16 under the state of magnetic sensor module 10 shown in Figure 1, and Fig. 5 B is the curve chart that the output under this state schematically is described.Fig. 6 A schematically represents magnetic sensor module shown in Figure 1 10 is fixed on the substrate via projection 21 and constitutes the sectional view of the situation of Magnetic Sensor 23, and Fig. 6 B is the figure that schematically represents the situation in the magnetic field 17 under this state.
Wherein, the symbol 14～17th among Fig. 3 A, Fig. 4 A, Fig. 5 A, Fig. 6 B is schematically represented the magnetic field under the state separately.In Fig. 3 B, Fig. 4 B, Fig. 5 B, schematically represented, when high level (High level) is moved to low level (Low level) and when low level is moved to high level, on the X direction by different positions.
As shown in Figure 1, this magnetic sensor module 10 has at least: the semiconductor substrate 11 with the integrated circuit (not shown) that carries out switch motion; A face 11a who is arranged on this semiconductor substrate 11 goes up, along the magnetoresistive element 13 that has the sense magnetic direction on the direction of an above-mentioned face 11a; Be arranged on the above-mentioned semiconductor substrate 11, and the bias magnetic field that is configured on the face 11b parallel with an above-mentioned face 11a applies parts (bias magnetic field applies and uses magnet) 12.The direction of magnetization that the bias magnetic field of the magnetic sensor module 10 of present embodiment applies parts 12 is characterised in that: as shown in Figure 3A, be along forming the direction that this bias magnetic field applies the face 11b of parts 12 (N and S along arranging on the direction of face 11b), do not applying under the state of external magnetic field, to along applying bias magnetic field 14 on the direction of an above-mentioned face 11a who forms magnetoresistive element 13.
Apply parts 12 as bias magnetic field and be preferably, semiconductor substrate is being carried out when stacked, can be by paste (paste) magnet or the thin film magnet that forms with the high technology of semiconductor technology compatibility.Be not particularly limited as the Hard Magnetic gonosome that constitutes magnet, can utilize samarium-cobalt (SmCo), iron-platinum (FePt), cobalt-platinum (CoPt), neodymium-iron-boron (NdFeB), ferrite etc.
Can by methods such as coating on any face of substrate, apply Hard Magnetic gonosome powder etc. is mixed into the Hard Magnetic gonosome paste that forms in the resin glue and at sintering, add and pine on the direction of regulation, magnetizing, paste magnet is set.
Thin film magnet is to be the magnet of film with Hard Magnetic gonosome film forming, and its manufacture method is not particularly limited, and can exemplify the printing of sputter or evaporation, plating, binding magnet etc.Thin film magnet is being formed in the patterning of arbitrary shape, for example can utilize etching method or peel off the photoetching technique of method etc.The thin film magnet that produces in carrying out annealing in process, magnetizes on the sense magnetic direction as Magnetic Sensor as required.
At this, in example shown in Figure 1, bias magnetic field applies on another face 11b that parts 12 are arranged on a side opposite with a face 11a of semiconductor substrate 11.At this moment, because the distance that bias magnetic field applies between parts 12 and the magnetoresistive element 13 is definite by the thickness of semiconductor substrate 11, magnetoresistive element is applied magnetic field so can control accurately.
In addition, magnetic sensor module 10 of the present invention is not limited to this example, for example also can bias magnetic field be set at the homonymy of a face 11a of semiconductor substrate 11 and apply parts 12.And, when stacked bias magnetic field applies parts 12 and semiconductor substrate 11, also can adjust bias magnetic field arbitrarily and apply distance between parts 12 and the semiconductor substrate 11 across other layers (not shown).Also can control the magnetic field that magnetoresistive element 13 is applied accurately by this method.Middle across other layers be not particularly limited, can easily form by nonmagnetic substances such as suitable inorganic material or organic material are carried out film forming.
In the present invention, as the electromagnetic conversion material of the magnetoresistive element 13 that constitutes magnetic sensor module 10, use along the anisotropic magnetoresistance material (MR) that has the sense magnetic direction on the direction of face.Magnetoresistive element 13 can be made of magnetic film, can exemplify permalloy, and wherein, this magnetic film is made of iron-nickel (FeNi), iron-nickel-cobalt ferromagnetism bodies such as (NiFeCo).
In the present embodiment, be arranged on the semiconductor substrate 11 magnetoresistive element 13 as shown in Figure 2, by four MR film resistor 13a, 13b, 13c, 13d, and terminal a, the b, c, the d that are made of conductor that are arranged between film resistor 13a～13d constitute, and has the bridge joint structure.As the method that forms each MR film resistor 13a～13d, can exemplify to have made up and form operation and based on the method for the film formation process of plating method or sputtering method based on photolithographic pattern.
The pattern of MR film resistor 13a～13d is towards the direction configuration of regulation separately.
Under the situation that is magnetoresistive element 13 shown in Figure 2, the direction of two MR film resistor 13a, 13d on a face 11a of semiconductor substrate 11 is (hereinafter referred to as " directions X ".Left and right directions among Fig. 2) configuration, other two MR film resistor 13b, the 13c direction vertical with above-mentioned directions X on a face 11a of semiconductor substrate 11 is (hereinafter referred to as " Y direction ".Above-below direction among Fig. 2) configuration.
In two MR film resistor 13a, 13d of directions X configuration, be provided with a plurality of MR films that directions X is disposed abreast as length direction.The MR film of adjacency is so that be electrically connected on the Y direction by MR film or conducting film according to the mode that becomes bending (meander) shape (meander-shaped) between its end.
And, in two MR film resistor 13b, 13c of the configuration of Y direction, be provided with a plurality of MR films that the Y direction is disposed abreast as length direction.The MR film of adjacency is so that form the mode of curved shape (meander-shaped) and be electrically connected on directions X by MR film or conducting film between its end.
Preferred four MR film resistor 13a～13d are formed by the MR film of identical material.Based on this, because the flutter of four MR film resistor 13a～13d relative temperatures is identical, so improve temperature characterisitic as magnetic device.When forming dogleg section, use gold (Au), copper (Cu), aluminium electrically conductive films such as (Al) with conducting film.
As shown in Figure 2, magnetoresistive element 13 constitutes bridgt circuit.Therefore, in four MR film resistor 13a～13d, disposed in abutting connection with ground between the element of different directions (directions X or Y direction) configuration mutually, four MR film resistor 13a～13d connect by wiring.These wirings for example can be made of gold (Au), copper (Cu), aluminium electrically conductive films such as (Al).Four MR film resistor 13a～13d are according to disposing towards differing 90 ° of ground one by one.Material, pattern form and the resistance value of preferred four MR film resistor 13a～13d are identical.Pattern as arranging four MR film resistor 13a～13d can exemplify 2 * 2 arrangement in length and breadth as shown in Figure 2, but by connecting with suitable wiring, also can adopt other arrangement between the MR film resistor.
In such bridgt circuit, when terminal a was connected respectively with ground level with supply voltage, terminal b, the potential difference between other two terminal c, the d (bridge joint output) can obtain as the output of magnetoresistive element 13.Because bridge joint output has reflected the intensity that applies magnetic field and has increased and decreased thereupon, so the size of this bridge joint output (voltage) and the threshold value of regulation are compared, by judge output voltage greater than the threshold value (high level state) of regulation or output voltage less than the threshold value (low level state) of regulation, can carry out switch motion.In the present invention, carry out switch motion by the integrated circuit (not shown) that forms on semiconductor substrate 11, integrated circuit output is expressed as the signal of any state of high level state or low level state.
Then, with reference to the detection method of Fig. 3 A～Fig. 5 B explanation as the magnetic sensor module 10 of present embodiment.The output of magnetic sensor module 10 is set at according to the magnetic flux density of threshold value, and output voltage is high level state (High level) when magnetic flux density is low, and output voltage is low level state (Low level) when magnetic flux density is high.Therefore, determine threshold value, the output voltage of magnetic sensor module 10 is set at high level state during greater than above-mentioned threshold value, the output voltage of magnetic sensor module 10 is set at low level state during less than above-mentioned threshold value at the output voltage of magnetic sensor module 10.And, about threshold value the interval is set between high level state and low level state preferably and distinguishes both clearly.To be used in combination by the integrated circuit that relatively carries out switch motion of magnitude of voltage and the output of electromagnetic conversion element like this, can constitute the magnetic sensor module 10 that carries out switch motion according to the size of external magnetic field thus.
As shown in Figure 3A, do not applying under the state of external magnetic field, apply parts 12 by magnetized bias magnetic field on the direction of the face that applies parts 12 along the formation bias magnetic field, magnetoresistive element 13 is applied bias magnetic field 14 on the direction of the face of edge formation magnetoresistive element 13.The magnetic field 14 of this moment is that near the high magnetic field of magnetic flux density the magnetoresistive element 13 (is expressed as the dextrad arrow with solid line among Fig. 3 A on magnetoresistive element 13.)。Therefore, shown in Fig. 3 B, if set above-mentioned threshold value so that output voltage that will this moment is judged as low level state (Low level), then the output of low level state becomes expression not near the state of magnetic.
Shown in Fig. 4 A, near magnetics 20 such as iron plates the time, apply the magnetic flux that parts 12 apply by bias magnetic field and absorbed by magnetic 20.Its result, the magnetic field 15 of this moment becomes near the low magnetic field (dot on the magnetoresistive element 13 among Fig. 4 A and be the dextrad arrow) of magnetic flux density the magnetoresistive element 13.Therefore, shown in Fig. 4 B, if set above-mentioned threshold value so that output voltage is at this moment become high level state (High level), then the output of high level state becomes the state of expression near magnetic 20.
In Fig. 4 A, illustrated from a face 11a side of semiconductor substrate 11 to make the approaching situation of magnetic 20, but shown in Fig. 5 A, magnetic 20 is moved when near similarly from another face 11b side joint of semiconductor substrate 11.Promptly, if make magnetic 20 approaching, then apply the magnetic flux that parts 12 apply and absorbed by magnetic 20 by bias magnetic field.Its result, near the magnetic flux densities the magnetoresistive element 13 become low-intensity magnetic field 16, the signal of the high level state of the state that output expression magnetic 20 is approaching.
Because magnetoresistive element 13 has the character that resistance value changes according to the intensity that applies magnetic field, and have and apply the magnetic field more little characteristic of forceful electric power resistance more, so the intensity of the magnetic flux density that the potential difference between two terminals of magnetoresistive element 13 (bridge joint output) reflection applies the MR film and increasing and decreasing.The size of this bridge joint output and the threshold value of regulation are compared, by judge output voltage be greater than or carry out switch motion less than the threshold value of regulation.By such formation, can realize producing the magnetic sensor module 10 of two different outputs according to the height of the magnetic flux density that element is applied.In addition, output as this magnetic sensor module 10 that is integrated circuit output, can be signal, at the signal of the bridge joint output of magnetoresistive element 13 output LOW voltage value during greater than the threshold value of regulation in the bridge joint of magnetoresistive element 13 output output HIGH voltage value during less than the threshold value of regulation.And, also can be opposite, at the signal of the bridge joint of magnetoresistive element 13 output output LOW voltage value during, at the signal of the bridge joint output of magnetoresistive element 13 output HIGH voltage value during greater than the threshold value of regulation less than the threshold value of regulation.
Owing to carry out switch motion by the integrated circuit (IC) that is arranged on the semiconductor substrate, reach necessary circuit such as control so can save ground, space constituent ratio, can realize the miniaturization of magnetic sensor module 10.As shown in Figure 6A, the magnetic sensor module 10 of present embodiment is by being provided with projection 21 on the face 11a of semiconductor substrate 11, and is fixed on the flexible print wiring substrates 22 such as (FPC), can constitute Magnetic Sensor 23.In addition, magnetic sensor module 10, projection 21 and substrate 22 can be contained in not shown Magnetic Sensor, they are constituted Magnetic Sensor 23 as a whole with in the housing.And can use projection or lead, conductive paste (not shown) etc. to be electrically connected this moment between semiconductor substrate 11 and circuit substrate 22.
As described above, in first execution mode of the present invention, by using the direction of magnetization is to apply parts 12 and have along the magnetoresistive element 13 of the sense magnetic direction of the direction of the face of film along forming the bias magnetic field of direction that bias magnetic field applies the face of parts 12, can both detect under near the situation of magnetic sensor module 10 from any direction at magnetic 20.
And, because bias magnetic field applies parts 12 and magnetoresistive element 13 all uses the technology formation high with the semiconductor technology compatibility, adjust the position relation that bias magnetic field applies parts 12 and magnetoresistive element 13 easily accurately.And, since all be layered in carry out on the semiconductor substrate integrated, so can carry out miniaturization to magnetic sensor module 10 and the Magnetic Sensor 23 with this magnetic sensor module 10.
(embodiment)
As shown in Figure 1, the magnetic sensor module of making according to present embodiment 10 is by magnetoresistive element 13 be integrated in bias magnetic field on the semiconductor substrate 11 and apply parts 12 and constitute.As shown in Figure 2, magnetoresistive element 13 is made of the bridge joint of four MR film resistor 13a～13d, and each MR film resistor is formed by permalloy film.The output of magnetoresistive element 13 is carried out switch motion after comparing by the comparison circuit (comparator) in the integrated circuit.Its encapsulation constitutes by the wafer-class encapsulation that is made of silicon (Si) substrate, and the chip size that comprises projection 21 (with reference to Fig. 6 A, Fig. 6 B) is 0.97 * 0.97 * 0.5 (mm).
Apply the paste magnet of the NdFeB system of parts 12 as bias magnetic field in the back side of semiconductor substrate 11 11b configuration.The paste magnet of NdFeB system forms the thickness of about 80 μ m, is magnetizing on the direction of the face identical with the sense magnetic direction of magnetoresistive element 13.The magnetic field that paste magnet can apply magnetoresistive element 13 by its film thickness monitoring, and, because the thickness regulation bias magnetic field by substrate 11 applies the distance between parts 12 and the magnetoresistive element 13, apply magnetic field so can control accurately.
As shown in Figure 6A, this magnetic sensor module 10 is installed to by the projection 21 on the face 11a who is arranged on semiconductor substrate 11 and constitutes Magnetic Sensor 23 on the substrate 22.Then, when confirming its output, output is low level.This Magnetic Sensor 23, according to not applying under the state of bias magnetic field, with about 10～20 (Oe) apply magnetic field as threshold field, than this strong magnetic field the time, be output as low level, set being weaker than the mode that is output as high level under the magnetic field of this threshold field.Therefore, low level output means Magnetic Sensor 23 has been applied bias magnetic field about about 20 (Oe).
Then, shown in Fig. 6 B, when the bias magnetic field from magnetic sensor module 10 applied parts 12 side joint early works and is the iron plate of magnetic 20, in the distance of about 10mm, the output of Magnetic Sensor 23 was reversed to high level.This expression is absorbed by magnetic 20 by the magnetic flux that bias magnetic field applies parts 12 generations, and near the magnetic flux density the magnetoresistive element 13 is low as a result, applies the meaning of the intensity in magnetic field less than about 10 (Oe).
Though diagram especially similarly, during near magnetic, the output of Magnetic Sensor 23 also is reversed to high level from magnetoresistive element 13 sides (downside Fig. 6 A, Fig. 6 B) of magnetic sensor module 10.
According to these results as can be known, magnetic 20 no matter be from magnetoresistive element 13 side joints when near or from its opposition side near the time, can access the output that is reversed to high level as broad as longly.
Below, use Fig. 7～Figure 12 B that second execution mode of the present invention is described.
Promptly, describe with reference to the execution mode of accompanying drawing to piston position detecting device of the present invention.
Fig. 7 is a longitudinal section of schematically representing an execution mode of piston position detecting device 31 of the present invention.
Piston position detecting device 31 of the present invention has at least: the cylinder barrel 32 that is made of nonmagnetic substance; The piston 33 that at least a portion is 34 that constitute by magnetic material, dispose in the mode of sliding in the inner peripheral surface of above-mentioned cylinder barrel 32; And the Magnetic Sensor 40 that is configured in the outer peripheral face of above-mentioned cylinder barrel 32, Magnetic Sensor 40 possesses bias magnetic field at least and applies parts 43.
In the present invention, by with at least a portion of piston 33 as the magnetic material 34 that can absorb magnetic flux, Magnetic Sensor 40 as possessing the formation that bias magnetic field applies parts 43, there is no need distributed magnet in piston 33.Thus, the magnetic pole that can consider magnet is installed Magnetic Sensor 40.And, so owing in piston 33, do not have distributed magnet that piston 33 and cylinder barrel 32 are attenuated.Its result in piston position detecting device 31 of the present invention, can make the structure of piston 33 and manufacturing become simple.
And, shown in Figure 9 as the sectional view of the part of extracting Magnetic Sensor 40 as expression out, above-mentioned Magnetic Sensor 40 is by magnetic sensor module 47, projection described later 51, substrate 52 and these are received into inner Magnetic Sensors constitute with housing 48.Magnetic sensor module 47 has at least: possess the semiconductor substrate 41 that carries out the integrated circuit of switch motion according to the intensity of magnetic flux density at least; Be arranged on the face 41a of this semiconductor substrate 41, at the magnetoresistive element 42 that on the direction of an above-mentioned face 41a, has the sense magnetic direction; Be arranged on the above-mentioned semiconductor substrate 41, and the bias magnetic field that is configured on the face 41b parallel with an above-mentioned face 41a applies parts (bias magnetic field applies and uses magnet) 43.It is the magnet that is made of film that above-mentioned bias magnetic field applies parts 43, is configured in the top, following or inner of said integrated circuit.Based on this, Magnetic Sensor 40 is small-sized, can increase the design freedom of piston position detecting device 31, can make contributions to the miniaturization of piston position detecting device 31 integral body.
At least a portion of piston 33 is made of the magnetic material 34 that can absorb magnetic flux.Be not particularly limited as magnetic material 34, preferably use for example iron (Fe), niobium (Nb), chromium (Cr), the strong material of neodymium (Nd) isodynamic.
As shown in Figure 9, Magnetic Sensor 40 is provided with projection 51 on the face 41a of semiconductor substrate 41, have the formation that they is fixed to flexible print wiring substrates 52 such as (FPC).Such Magnetic Sensor 40 is configured on the outer peripheral face of cylinder barrel 32.And can use projection 51 or lead, conductive paste (not shown) etc. to be electrically connected this moment between semiconductor substrate 41 and circuit substrate 52.Such Magnetic Sensor 40 is packed by WLP (wafer-class encapsulation), and the chip size that comprises projection in magnetic sensor module 47 for example is 0.97 * 0.97 * 0.5mm.Wherein, packing forms is not limited to the also resin moulded encapsulation of WLP.
The magnetoresistive element 42 of Magnetic Sensor 40 uses at the anisotropic magnetoresistance material (MR) that has the sense magnetic direction on the direction of face as the electromagnetic conversion material.Magnetoresistive element 42 can be made of magnetic film, can exemplify permalloy, and wherein, this magnetic film is made of iron-nickel (FeNi), iron-nickel-cobalt ferromagnetism bodies such as (NiFeCo).
In the present embodiment, be arranged on the semiconductor substrate 41 magnetoresistive element 42 as shown in figure 10, by four MR film resistor 42a, 42b, 42c, 42d, and terminal a, the b, c, the d that are made of conductor that are arranged between film resistor 42a～42d constitute, and has the bridge joint structure.As the method that forms each MR film resistor 42a～42d, can exemplify to have made up and form operation and based on the method for the film formation process of plating method or sputtering method based on photolithographic pattern.The pattern of MR film resistor 42a～42d is towards the direction configuration of regulation separately.
As shown in figure 10, magnetoresistive element 42 constitutes bridgt circuit.Therefore, four MR film resistor 42a～42d have: mutually between the element of different directions (directions X or Y direction) configuration by in abutting connection with the ground configuration, and the structure that connects by wiring.These wirings for example can be made of gold (Au), copper (Cu), aluminium electrically conductive films such as (Al).Four MR film resistor 42a～42d are according to disposing towards changing 90 ° of ground one by one.And material, pattern form and the resistance value of preferred four MR film resistor 42a～42d are identical.Pattern as arranging four MR film resistor 42a～42d can exemplify 2 * 2 arrangement in length and breadth as shown in figure 10, but by connecting with suitable wiring, also can adopt other arrangement between the MR film resistor.
In such bridgt circuit, when supply voltage is connected with terminal a, when ground level is connected with terminal b, the output of the potential difference between other two terminal c, the d (bridge joint output) as magnetoresistive element 42 can be obtained.Because bridge joint output has reflected intensity and the increase and decrease thereupon that applies magnetic field, so the size of this bridge joint output (voltage) and the threshold value of regulation are compared, by judge output voltage greater than the threshold value (high level state) of regulation or output voltage less than the threshold value (low level state) of regulation, can carry out switch motion.In the present embodiment, carry out switch motion, the signal of any state of integrated circuit output expression high level state or low level state by the integrated circuit (not shown) that on semiconductor substrate 41, forms.
And the bias magnetic field that disposes a part that constitutes Magnetic Sensor 40 in the outside of above-mentioned cylinder barrel 32 applies parts 43.
For example in example as shown in Figure 9, bias magnetic field applies parts 43 in Magnetic Sensor 40, is layered on the semiconductor substrate 41, and is configured in the face 41b parallel with an above-mentioned face 41a.
It is preferred to apply parts 43 as bias magnetic field, semiconductor substrate 41 is being carried out when stacked, by the thin film magnet 44 that can form with the high technology of semiconductor technology compatibility.Be not particularly limited as the Hard Magnetic gonosome that constitutes thin film magnet 44, can utilize samarium-cobalt (SmCo), iron-platinum (FePt), cobalt-platinum (CoPt), neodymium-iron-boron (NdFeB), ferrite etc.
The area that the thickness of thin film magnet 44 and thin film magnet 44 account for magnetic sensor module 47 is not particularly limited, and can suitably determine.For example, form the paste magnet that NdFeB is, on the direction identical, magnetize with the sense magnetic direction of Magnetic Sensor 40 as thin film magnet 44 thickness with about 80nm on the face 41b of semiconductor substrate 41.
As shown in figure 11, thin film magnet 44 is be magnetized on the direction of the face 41b that forms this magnet (direction of magnetization of thin film magnet 44 is the directions along face 41b), do not applying under the state of external magnetic field, on the direction of the face that forms magnetoresistive element 42, applying bias magnetic field 45.
At this, in example shown in Figure 9, bias magnetic field apply parts 43 be arranged on as with another face 41b of the opposition side of a face 41a of semiconductor substrate 41 on.At this moment, owing to the distance between thin film magnet 44 and the magnetoresistive element 42 is determined by the thickness of semiconductor substrate 41, so can control the magnetic field that magnetoresistive element 42 is applied accurately.
In addition, the configuration that bias magnetic field applies parts 43 is not limited to this example, for example also can bias magnetic field be set at the homonymy of a face 41a of semiconductor substrate 41 and apply parts 43.And, carry out when stacked bias magnetic field being applied parts 43 and semiconductor substrate 41, also can adjust bias magnetic field arbitrarily and apply distance between parts 43 and the semiconductor substrate 41 across other layers (not shown).Also can control the magnetic field that magnetoresistive element 42 is applied accurately by this method.Middle across other layers be not particularly limited, can easily form by nonmagnetic substances such as suitable inorganic material or organic material are carried out film forming.
Then, with reference to Figure 11 A～Figure 12 B the piston position detection method based on Magnetic Sensor 40 in the piston position detecting device 31 of present embodiment is described.The output of Magnetic Sensor 40, according to the magnetic flux density according to threshold value, output voltage is high level state (High level) when magnetic flux density is low, output voltage is that the mode of low level state (Low level) is set when magnetic flux density is high.Therefore, determine threshold value, the output voltage of Magnetic Sensor 40 is set at high level state during greater than above-mentioned threshold value, the output voltage of Magnetic Sensor 40 is set at low level state during less than above-mentioned threshold value at the output voltage of Magnetic Sensor 40.And, preferably set threshold value so that the interval is set and distinguish both clearly between high level state and low level state.By using in combination by the integrated circuit that relatively carries out switch motion of magnitude of voltage and the output of electromagnetic conversion element like this, can constitute piston position detecting device 31 according to the size detection piston position of external magnetic field.
Shown in Figure 11 A, do not applying under the state of external magnetic field, apply parts 43 by magnetized bias magnetic field on the direction of the face that applies parts 43 along the formation bias magnetic field, magnetoresistive element 42 is applied bias magnetic field 45 on the direction of the face of edge formation magnetoresistive element 42.The magnetic field 45 of this moment is that near the high magnetic field of magnetic flux density the magnetoresistive element 42 (is expressed as the dextrad arrow with solid line among Figure 11 A on magnetoresistive element 42.)。Therefore, shown in Figure 11 B, if set above-mentioned threshold value so that output voltage at this moment is judged as low level state (Low level), then the output of low level state becomes expression magnetic 34 (piston 33) does not have approaching state.
Shown in Figure 12 A, make magnetic 34 (piston 33) near the time, the magnetic flux that is applied by thin film magnet 44 is absorbed by magnetic 34.Its result, the magnetic field 46 of this moment becomes near the low magnetic field (being expressed as the dextrad arrow with solid line on the magnetoresistive element 42 among Figure 12 A) of magnetic flux density the magnetoresistive element 42.Therefore, shown in Figure 12 B, if the mode that becomes high level state (High level) according to the output voltage that makes this moment is set above-mentioned threshold value, then the output of high level state becomes the approaching state of expression magnetic 34 (piston 33).
Magnetoresistive element 42 has the character that resistance value changes according to the intensity that applies magnetic field, and has and apply the magnetic field more little characteristic of forceful electric power resistance more.Therefore, the potential difference (bridge joint output) between two of magnetoresistive element 42 terminals has reflected the intensity of the magnetic flux density that the MR film is applied and increase and decrease thereupon.The size of this bridge joint output and the threshold value of regulation are compared, by judge output voltage be greater than or carry out switch motion less than the threshold value of regulation.By such formation, can realize producing the Magnetic Sensor 40 of two different outputs and the piston position detecting device 31 that utilizes it according to the height of the magnetic flux density that element is applied.In addition, output as this Magnetic Sensor 40 that is integrated circuit output, can be signal, at the signal of the bridge joint output of magnetoresistive element 42 output LOW voltage value during greater than the threshold value of regulation in the bridge joint of magnetoresistive element 42 output output HIGH voltage value during less than the threshold value of regulation.And, also can be opposite, at the signal of the bridge joint of magnetoresistive element 42 output output LOW voltage value during, at the signal of the bridge joint output of magnetoresistive element 42 output HIGH voltage value during greater than the threshold value of regulation less than the threshold value of regulation.
And, owing to carry out the piston position detection, reach necessary circuit such as control so can save ground, space constituent ratio by the integrated circuit (IC) that is arranged on the semiconductor substrate 41, can realize the miniaturization of Magnetic Sensor 40.
More than the piston position detecting device 31 of second execution mode of the present invention is illustrated, but the present invention is not limited thereto, and can suitably change in the scope that does not break away from the invention aim.
Industrial utilizability
Magnetic sensor module of the present invention can be used in detect the magnetics such as iron plate approach various In the purposes. And the present invention can be applied in the piston position detecting device.
Claims (7)
1. magnetic sensor module comprises:
Semiconductor substrate, it has the integrated circuit that carries out switch motion;
Magnetoresistive element, it is arranged on the face of this semiconductor substrate, and has the sense magnetic direction on the direction of this face;
Bias magnetic field applies parts, and it is arranged on the described semiconductor substrate, and is configured on the face parallel with a described face,
Described bias magnetic field applies parts, be magnetized along having disposed on described the direction that this bias magnetic field applies parts, do not applying under the state of external magnetic field, this bias magnetic field applies parts and applying bias magnetic field on the direction of a described face that is provided with described magnetoresistive element.
2. magnetic sensor module according to claim 1 is characterized in that,
It is paste magnet or thin film magnet that described bias magnetic field applies parts.
3. magnetic sensor module according to claim 2 is characterized in that,
Described integrated circuit, the output voltage of described magnetoresistive element and the threshold value of regulation are compared, according to result relatively, the output voltage of the described magnetoresistive element of output expression is the signal greater than the high level state of the threshold value of described regulation, or the output voltage of the described magnetoresistive element of output expression is the signal less than the low level state of the threshold value of described regulation.
4. magnetic sensor module according to claim 3 is characterized in that,
Described bias magnetic field applies parts and is arranged on another face as the opposition side of a face of described semiconductor substrate.
5. piston position detecting device comprises:
Cylinder barrel, it is made of nonmagnetic substance;
Piston, its at least a portion is made of magnetic material, disposes in the mode of sliding on the inner peripheral surface of described cylinder barrel;
Magnetic Sensor, it is configured on the outer peripheral face of described cylinder barrel, has bias magnetic field and applies parts.
6. piston position detecting device according to claim 5 is characterized in that,
Described Magnetic Sensor possesses the integrated circuit that carries out switch motion according to the intensity of magnetic flux density at least, and it is the magnet that is made of film that described bias magnetic field applies parts, is configured in the top, following or inner of described integrated circuit.
7. piston position detecting device according to claim 5 is characterized in that,
Described Magnetic Sensor has semiconductor substrate and is arranged on the face of this semiconductor substrate and at the magnetoresistive element that has the sense magnetic direction on the direction of this face, it is magnet that described bias magnetic field applies parts, this magnet is arranged on the described semiconductor substrate and is configured on the face parallel with a described face and is being magnetized on described the direction that has disposed this magnet, do not applying under the state of external magnetic field, this magnet is applying bias magnetic field on the direction of a described face that is provided with described magnetoresistive element.
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| JP2007045295 | 2007-02-26 | ||
| JP045295/2007 | 2007-02-26 | ||
| JP189692/2007 | 2007-07-20 |
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| CN101632146A true CN101632146A (en) | 2010-01-20 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| CN107003148A (en) * | 2014-09-24 | 2017-08-01 | 罗塔工程有限公司 | Magnetic field generator and position sensing component |
| CN108692000A (en) * | 2017-03-30 | 2018-10-23 | 本田技研工业株式会社 | The setting method and fluid pressure control circuit of actuator |
| CN109196367A (en) * | 2016-05-11 | 2019-01-11 | 德州仪器公司 | Twin shaft magnetic flux grid device |
| CN110243269A (en) * | 2018-03-09 | 2019-09-17 | 喜开理株式会社 | Piston position detecting device |
| CN112324907A (en) * | 2020-10-28 | 2021-02-05 | 陕西法士特汽车传动集团有限责任公司 | Direct-drive through shaft power takeoff |
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2008
- 2008-02-08 CN CN200880005914A patent/CN101632146A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| CN107003148A (en) * | 2014-09-24 | 2017-08-01 | 罗塔工程有限公司 | Magnetic field generator and position sensing component |
| CN107003148B (en) * | 2014-09-24 | 2020-07-28 | 罗塔工程有限公司 | Magnetic field generator and position sensing assembly |
| CN109196367A (en) * | 2016-05-11 | 2019-01-11 | 德州仪器公司 | Twin shaft magnetic flux grid device |
| CN108692000A (en) * | 2017-03-30 | 2018-10-23 | 本田技研工业株式会社 | The setting method and fluid pressure control circuit of actuator |
| US10584725B2 (en) | 2017-03-30 | 2020-03-10 | Honda Motor Co., Ltd. | Method of setting actuator and fluid pressure control circuit |
| CN108692000B (en) * | 2017-03-30 | 2020-06-16 | 本田技研工业株式会社 | Method for setting actuator and fluid pressure control circuit |
| CN110243269A (en) * | 2018-03-09 | 2019-09-17 | 喜开理株式会社 | Piston position detecting device |
| CN112324907A (en) * | 2020-10-28 | 2021-02-05 | 陕西法士特汽车传动集团有限责任公司 | Direct-drive through shaft power takeoff |
| CN112324907B (en) * | 2020-10-28 | 2022-08-12 | 陕西法士特汽车传动集团有限责任公司 | Direct-drive through shaft power takeoff |
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