CN101626143A

CN101626143A - Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots

Info

Publication number: CN101626143A
Application number: CN200910066797A
Authority: CN
Inventors: 李占国; 刘国军; 尤明慧; 李林; 李梅; 乔忠良; 邓昀; 王勇; 王晓华; 赵英杰; 李联合
Original assignee: Changchun University of Science and Technology
Current assignee: Changchun University of Science and Technology
Priority date: 2009-04-10
Filing date: 2009-04-10
Publication date: 2010-01-13
Anticipated expiration: 2029-04-10
Also published as: CN101626143B

Abstract

With specific lattice parameters and energy band structure properties, III-V antimonides show more and more important research value and application value in the aspect of near and medium infrared semiconductor devices. The research and development of GaAs-based 1.5mu m Sb-based quantum dot lasers can provide the probability for replacing InP-based material devices, overcome the disadvantages of difficult superintegration among the InP-based materials and poor temperature stability, and provide a novel optical source with low cost, low power consumption and good performance for optical communication. The invention relates to epitaxial growth design and a method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots, which can realize the research and development of the low-dimension epitaxial growth of antimonide systems.

Description

Adopt the InGaSb Cylindrical Quantum Dots to realize the epitaxial growth design and the method for high efficiency 1.5 mu m communication band laser structures

Technical field

The present invention relates to the semiconductor laser material technical field, belong to the growth technology field of semiconductor laser new material.

Background technology

With the semiconductor low dimensional structures is the laser of active area, has lower threshold current density, the higher gain of light, higher characteristic temperature and wideer advantages such as modulation bandwidth in theory.

In recent years, though by adopting the low-temperature epitaxy growth technology, AlGaAsSb resilient coating and GaAsSb or high indium component I nGaAs cap rock reduce strain gauge technique etc., the room temperature luminous wavelength of InGaAs quantum-dot structure has covered 1.3 μ m and these two important communication windows of 1.5 μ m on the GaAs base, but still limited for the breakthrough research of 1.5 μ m high efficiency semiconductor lasers.

III-V family antimonide is demonstrating more and more important researching value and the using value of getting with its distinctive lattice parameter, band structure characteristic aspect near, the middle infrared semiconductor device.Antimonide is with the focus material of characteristics become middle-infrared band research in recent years such as its distinctive narrow band gap, electron effective mass be little, the development of the Sb based quantum dot laser device of GaAs based 1.5 μ m will substitute InP sill device, overcoming the InP sill, to be difficult to high density integrated, shortcomings such as temperature stability difference, for optical communication provide a kind of cheap, power consumption is little, the new light sources of function admirable is selected.

The research of InGaSb quantum dot was just beginning one's study in recent years, reported the correlative study situation of 1.3 μ m and 1.55 μ m InGaSb quantum dot lasers in 2004.

It is the core ray structure that present patent application proposes with cylindricality InGaSb quantum dot, the epitaxial growth of the InGaSb Cylindrical Quantum Dots laser structure of development GaAs based 1.5 5 mu m luminous wavelength.

Summary of the invention

The present invention be a kind of be the epitaxial growth method that high efficiency 1.5 mu m communication band laser structures of core ray structure are arranged with cylindricality InGaSb quantum dot.Because cylindricality has increased the quantum dot large scale, itself have size rule, even relatively, its emission effciency, the gain of light all are better than the quantum dot of traditional self-organizing growth; The lamination soakage layer also is better than the quantum dot of individual layer soakage layer to the ability of capturing, reflectivity and the light limitation capability of electronics on every side.

We have invented a kind of is the epitaxial growth method of high efficiency 1.5 mu m communication band laser structures of luminescent core with cylindricality InGaSb quantum dot.The present invention is achieved in that and sees shown in Figure 1ly that the epitaxial structure of cylindricality InGaSb quantum dot laser comprises GaAs substrate (1), GaAs resilient coating (2), AlSb/GaSb super-lattice buffer layer (3), Al _0.9Ga _0.1Sb lower limit layer (4), Al _0.3Ga _0.7Sb lower waveguide layer (5), cylindricality InGaSb quantum dot layer (6), Al _0.3Ga _0.7The last ducting layer of Sb (7), Al _0.9Ga _0.1Sb upper limiting layer (8), GaSb ohm layer (9).The equipment that is adopted is molecular beam epitaxial device (MBE).

Technique effect of the present invention is the coupling of quantum dot and quantum well and the combination technology of ray structure, can effectively improve the performance of semiconductor laser.

The present invention can make the threshold current of semiconductor laser and maximum luminous power output effectively be improved, and improves the electro-optical efficiency of laser, thereby improves the overall performance of laser.

Embodiment

As shown in Figure 1, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures comprise: n type GaAs substrate (1), n type GaAs resilient coating (2), n type AlSb/GaSb super-lattice buffer layer (3), n type Al _0.9Ga _0.1Sb lower limit layer (4), Al _0.3Ga _0.7Sb lower waveguide layer (5), cylindricality InGaSb quantum dot layer (6), the last ducting layer of Al0.3Ga0.7Sb (7), p type Al _0.9Ga _0.1Sb upper limiting layer (8), p type GaSb ohm layer (9).Substrate (1) is the substrate of material epitaxy growth, the GaAs substrate that adopts Si to mix; The grow GaAs resilient coating (2) of 0.5 μ m; The 0.2 μ m AlSb/GaSb super-lattice buffer layer (3) of growing; Under to be restricted to thickness be 1.2 μ m, the Al of Al content 0.9 _0.9Ga _0.1Sb layer (4); Lower waveguide layer is that thickness is 0.35 μ m, the Al of Al content 0.3 _0.3Ga _0.7Sb layer (5); Active area is the cylindricality InGaSb quantum dot layer (6) that utilizes 10-15 cycle GaSb/GaInSb superlattice growth; Last ducting layer is that thickness is 0.35 μ m, the Al of Al content 0.3 _0.3Ga _0.7Sb layer (7); Upper limiting layer is that thickness is 1.2 μ m, the Al of Al content 0.9 _0.9Ga _0.1Sb layer (8); Ohmic contact layer is the p type GaSb layer (9) of 200nm.

Below in conjunction with example explanation the present invention, the equipment of employing is molecular beam epitaxial device (MBE).

Substrate (1) be (100) partially＜111〉4 ° of orientations, Si doping content 1～2 * 10 ¹⁸Cm ^-3The GaAs crystalline material;

GaAs resilient coating (2), 580 ℃ of growth temperatures, n (Si) mixes 2 * 10 ¹⁸Cm ^-3, thickness 0.5 μ m;

AlSb/GaSb super-lattice buffer layer (3), 540 ℃ of growth temperatures.

Al _0.9Ga _0.1Sb lower limit layer (4), 540 ℃ of growth temperatures, Te mixes, and concentration is 5 * 10 ¹⁸Cm ^-3, 1.2 μ m grow;

Al _0.3Ga _0.7Sb lower waveguide layer (5), 540 ℃ of growth temperatures, 0.35 μ m grows;

Cylindricality InGaSb quantum dot layer (6), 420 ℃ of growth temperatures;

Al _0.3Ga _0.7The last ducting layer of Sb (7), 540 ℃ of growth temperatures

Al _0.9Ga _0.1Sb upper limiting layer (8), 540 ℃ of growth temperatures, Be mixes, and concentration is 5 * 10 ¹⁸Cm ^-3, thickness is 1.2 μ m;

Ohmic contact layer is the p type GaSb layer (9) of 200nm, 540 ℃ of growth temperatures, and Be mixes, and concentration is 2 * 10 ¹⁹Cm ^-3

Adopt the MBE method, (100) partially＜111〉4 ° of orientations, Si doping content 1～2 * 10 ¹⁸Cm ^-3GaAs substrate 1 on successively the growth:

Thickness 0.5 μ m, GaAs resilient coating, n (Si) mixes 2 * 10 ¹⁸Cm ^-3, 580 ℃ of growth temperatures;

AlSb/GaSb super-lattice buffer layer (3), 540 ℃ of growth temperatures.

Description of drawings:

Fig. 1 is an InGaSb Cylindrical Quantum Dots laser structure schematic diagram.

Claims

1, adopt the InGaSb Cylindrical Quantum Dots to realize the epitaxial growth design and the method for high efficiency 1.5 mu m communication band laser structures, its epitaxial structure comprises: GaAs substrate (1), GaAs resilient coating (2), A1Sb/GaSb super-lattice buffer layer (3), Al _0.9Ga _0.1Sb lower limit layer (4), Al _0.3Ga _0.7Sb lower waveguide layer (5), the cylindricality InGaSb quantum dot layer (6) of 10-15 cycle GaSb/GaInSb superlattice growth, Al _0.3Ga _0.7The last ducting layer of Sb (7), Al _0.9Ga _0.1Sb upper limiting layer (8), GaSb ohm layer (9).Adopt the MBE method, (100) partially＜111〉4 ° of orientations, Si doping content 1～2 * 10 ¹⁸Cm ^-3GaAs substrate (1) on successively the growth:

Thickness 0.5 μ m, the GaAs resilient coating, n (Si) mixes 2 * 10 ¹⁸Cm ^-3, 580 ℃ of growth temperatures;

AlSb/GaSb super-lattice buffer layer (3), 540 ℃ of growth temperatures.

The cylindricality InGaSb quantum dot layer (6) of 10-15 cycle GaSb/GaInSb superlattice growth, 420 ℃ of growth temperatures,

Quantum dot size (aspect ratio) is greater than 1;

Al _0.3Ga _0.7The last ducting layer of Sb (7), 540 ℃ of growth temperatures

2, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that, 580 ℃ of resilient coating (1) growth temperatures, and n (Si) mixes 2 * 10 ¹⁸Cm ^-3, thickness is 0.5 μ m.

3, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that, AlSb/GaSb super-lattice buffer layer (3), 540 ℃ of growth temperatures.

4, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that Al _0.9Ga _0.1Sb lower limit layer (4), 540 ℃ of growth temperatures, Te mixes, and concentration is 5 * 10 ¹⁸Cm ^-3, 1.2 μ m grow.

5, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that Al _0.3Ga _0.7Sb lower waveguide layer (5), 540 ℃ of growth temperatures, 0.35 μ m grows.

6, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1, it is characterized in that, the cylindricality InGaSb quantum dot layer (6) of 10-15 cycle GaSb/GaInSb superlattice growth, 420 ℃ of growth temperatures, quantum dot size (aspect ratio) is greater than 1, and GaSb/GaInSb superlattice period number is 10-15.

7, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that Al _0.3Ga _0.7The last ducting layer of Sb (5), 540 ℃ of growth temperatures, 0.35 μ m grows.

8, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that Al _0.9Ga _0.1Sb upper limiting layer (4), 540 ℃ of growth temperatures, Te mixes, and concentration is 5 * 10 ¹⁸Cm ^-3, 1.2 μ m grow.

9, InGaSb Cylindrical Quantum Dots high efficiency 1.5 mu m communication band laser structures according to claim 1 is characterized in that, ohmic contact layer is the p type GaSb layer (9) of 200nm, 540 ℃ of growth temperatures, and Be mixes, and concentration is 2 * 10 ¹⁹Cm ^-3