CN101615601A - Jie Chu semiconductor and manufacture method thereof straight up - Google Patents
Jie Chu semiconductor and manufacture method thereof straight up Download PDFInfo
- Publication number
- CN101615601A CN101615601A CN200910139892A CN200910139892A CN101615601A CN 101615601 A CN101615601 A CN 101615601A CN 200910139892 A CN200910139892 A CN 200910139892A CN 200910139892 A CN200910139892 A CN 200910139892A CN 101615601 A CN101615601 A CN 101615601A
- Authority
- CN
- China
- Prior art keywords
- contact
- moulding material
- semiconductor module
- semiconductor
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of contact semiconductor straight up with lead frame, comprise substrate, be arranged in the semiconductor on the substrate, and electrical contact, this contact forms from the contact of substrate lateral process below the connection plane, and this contact is arranged at least in part around semi-conductive injection moulding material.
Description
Technical field
The present invention relates to a kind of straight up the contact semiconductor, with and manufacture method.
Background technology
Under the prior art state, the known punch grid welding DCB (direct copperbonds direct copper) that utilizes, it is covered by moulding material, and comprises the circuit of transverse arrangement of turbo in encapsulation (lead frame of semiconductor, bearing semiconductor and moulding material thereof promptly).
The electrical connections ground of lead frame is drawn out to the edge from the center of circuit.
In order to realize the high degree of electrical insulation between the live part (bonding line, semiconductor and printed conductor) and to obtain very high mechanical stability or firm,, can obtain these products if encapsulation is centered on by hard plastics.
This manufacturing technology comprises by transfer moulding rigid plastics, volume hard, glassy polymeric material (for example Henkel Loctite Hysol) complete filling die body.For the transistor group shown in independent semiconductor device (as TO 220 outer casing molds of ST-Microelectronics IRF-540) and the US2005/0067719A1 is this situation.
For substrate in batch, some products are also around the reduction of heat plate of installing, for example DIP-IPM of Mitsubishi (" A new Version Intelligent Power Module for High PerformanceMotor Control " in addition; M.Iwasaki etc.; Power Semiconductor Division, Mitsubishi, Japan).(DIP refers to: dual in-line package (Dual Inline Package) and IPM refers to: Intelligent Power Module (Intelligent Power Module)).
The most frequent component form of this parts group is single in-line packages and dual in-line package (SIP and DIP), for example the Mitsubishi SIP-IPM PS-21661 of the DIP-IPM PS20341G of the DIP form of Mitsubishi or SIP form.
Common manufacturing technology comprises the hollow bulb that utilizes between two mold halves of hard plastics filling.Usually, the punch grid that comprises printed conductor and contact is inserted between two mold halves.This punch grid only is used for inner the connection and the outside guiding that is connected.About this point, semiconductor or be placed on the insulator pin frame (DCB, IMS or PCB), perhaps on uninsulated punch grid.
The shortcoming of the prior art is: can obtain power in order to increase, and usually must several SIP/DIP power component groups in parallel.When using one or more electric phase place, several SIP/DIP parts groups of these parallel connections should be arranged close to each otherly.The contact that extends laterally of punch grid contact form thereby will need other space around the module body.
Parts group in parallel is connected to strip conductor by welding or thread connection usually, is known as rail.This connection technique needs other other space of module body level.This two factor causes long relatively conductor path, especially high current power supply and the outlet of high electric current.Yet the long rail that forms with complex geometric shapes causes the stray inductance between the module in parallel, and this understands and have a negative impact to semi-conductive size and obtainable switching frequency.
Thereby owing to connect for the requirement that encapsulates lateral space, prior art does not allow compact side direction to arrange.Required other space means this zone and to form that to connect be impossible from package center to the printed conductor at punch grid edge, and except that the intersecting of installation elements and electric switch, also has the problem of high stray inductance.
Summary of the invention
Therefore, task of the present invention provides the module with improvement condition.
According to the present invention, its feature by principal claim solves.The method of favourable embodiments of the invention and these modules of manufacturing has been described from claim.
According to the present invention, propose a kind of upwards contact semiconductor and comprise substrate, be arranged in semiconductor and electrical contact on the substrate with lead frame, wherein contact forms conductor upwards.It is the direction opposite with substrate-side that direction " makes progress ".
Particularly, contact should be designed to have the elastic metallic colulus of deformed region, and it is particularly useful for guaranteeing that during transfer modling, the metal tongue flexibly leans against the mould inboard, thereby last and aligned inside, thereby does not have moulding material can stop contact.This makes last, and the metal tongue that is embedded in the moulding material is more stable, and the upside of contact flushes with the upside of moulding material.
Preferably, contact has the hole that is fit to hold plug in their upper end, and it does not have moulding material (during molded, by the core that contacts die edge or be removed, blind hole keeps not having moulding material).
Yet moulding material also can form the free space near the contact upper end, and insert wherein is set.The free space side of having plug size in this moulding material contacts a plurality of adjacent contacts.
Can comprise recess in Elastic Contact body and the moulding material according to semiconductor module of the present invention, described Elastic Contact body is upward to the upside of moulding material, and the recess in the semiconductor module upside moulding material is down to lead frame.
A kind of method of making semiconductor module, this semiconductor module is provided with moulding material, comprises, during the cavity that moulding material is injection molded into above the lead frame, the contact surface of contact flexibly leans against on the mold, covers to prevent the insulated moulding material of contact contact surface.
At the embodiment that is used for holding plug body, during the tame chamber that moulding material is injection molded into above the lead frame, can handle the sacrificial body of silicon or Teflon and can insert, between lead frame and mold near mold at least.
During the cavity that moulding material is injection molded into above the lead frame, this sacrificial body is removedly around one or more contacts, and removes after molded then.
With the needs encapsulation technology manufacturing, power model contact be positioned at the upside of module body or at least design have can be from the surface of last side contacts.The upside of module body is power model and substrate-side opposite surfaces.About this point, classical punch grid ends the dependence upon the near-lying mode tool and connects to form.
Connection forms by the contact that is positioned on the lead frame, thereby carries out three times of functions:
● the contact is carried electric current and is passed through to center on the upside of body to power model from lead frame or from punch grid
● contact has the elastic construction of resilient abutment when closed mould, and this elastic construction and surface in alignment.This elasticity is guaranteed:
During-encapsulation is molded, the typical sizes tolerance of lead frame thickness, contact or a plurality of punch grid are removed behind contact sealing mold
-elastic construction applies power on lead frame, it presses to bed die then, thereby prevents that plastics from arriving its below
● contact is designed to, their upside allow the tension force locking, form fit of relative contact or the formation that is connected of material.
-this connection is be threaded (function that contact for example has nut then)
-smooth surface allows spot welding, line bonding or ultrasonic wave friction welding (FW) or pressure sintering,
-push and connect the pin be included on the relative contact side and less hole, after the degree of depth was inserted, this was connected to form cold welding and connects (for example square cotter is in circular hole).
Description of drawings
Can see additional advantage of the present invention and feature from the explanation of following preferred embodiment.Show among the figure:
Fig. 1 has shown the cross section according to molding of the present invention, has the semiconductor of the contact body of lead frame and band installation;
Fig. 2 has shown the cross section of another molding, has the semiconductor of contact body of the installation of lead frame, band different geometries, and it allows via screw thread or pushes the connection of connection;
Fig. 3 has shown the cross section of molding, has lead frame, has semiconductor that the contact body is installed and produces the free space that is used for the plug connection by sacrificial body in molded volume;
Fig. 4 has shown the vertical view according to the molding of Fig. 3;
Fig. 5 has shown the molding according to Fig. 3, has the space of other formation, is used for by the surface on spot welding, line bonding or the ultrasonic wave friction welding (FW) contact lead frame;
Fig. 6 has shown the molding according to Fig. 5, can realize contact surface along horizontal direction;
Fig. 7 has shown the vertical view according to the molding of Fig. 6, have band the lead frame of contact body is installed, and utilize plasticity elasticity sacrificial body (for example Teflon) in molded volume, to have free space, the direct connection of permission on lead frame or punch grid, and have an opportunity to arrive in a lateral direction contact surface (for example ultrasonic bonding arm, line bonding mould);
Fig. 8 has shown the cross section of several several moldings on common cooling body and common track level (bus track cross level);
Fig. 9 has shown the cross section of several molding modules on the common cooling body, and image pattern 8 is the same, but has track cross level installation and that be threaded;
Figure 10 has shown the cross section of several molding modules on common cooling body, and is the same in the image pattern 8 or 9, but has other clamping device, and it produces vertical installing force and makes the heat-transfer surface of body press to cooling body between module body; With
Figure 11 has shown other selection, and wherein folding contact body arrives its upside (left side) or exclusionary zone (right side) in molding.
Embodiment
Fig. 1 has shown upwards contact lead-wire frame, is used for the power electronic semiconductor, and such as pottery or metallic core conductor plate or punch grid conductor, it must be encapsulated by hardened material and protect, described upwards contact lead-wire frame during the encapsulation injection by pressing to mold bottom.Push and prevent that adiabatic plastic material is expelled to (multiple injection moulding) below the lead frame bottom side.
Fig. 1 has shown the semiconductor that is connected by bonding line, and its below is a print copper conductor 12, dielectric ceramic layer 28, and its below is the copper layer that is used to dispel the heat.Contact 16 is engaged on the substrate copper conductor 12 by any interconnection technique, and advantageously, be included in foot on its print copper conductor 12 and the linearity region 20 between its contact surface 24 (can be connected to after molded), when contact surface 24 loading durations were pressed, this linearity region 20 was flexible.In order not only to avoid the injection moulding under the contact surface, also cover contact surface, this is basic during molded.Certainly, contact also can realize in other cutting step subsequently; Yet this is avoidable step.
The contact 24 of the needs of the power model made from encapsulation technology all is arranged in the upside of module body 40, and perhaps being made into the surface can contact from the top.
How much variablees of contact 20,28 are that pin connects (positive) formation in module body 40 upper areas, thereby socket (feminine gender) (not shown) with several contacts can be inserted into.In the case flexible member not necessarily because need other insert (sacrificial body), for example Teflon of thermal resistance or removable silicones, this produces plug cavity on the one hand, on the other hand the dimensional tolerance that produces of its plasticity of balance.After encapsulation is molded, removes insert and in molding 10, form the plug volume.In this way, can realize that single power connection is connected and control connection with one group of power.
Another embodiment of insert is the recess of molding volume 10 to lead frame or punch grid (it forms print copper conductor 12), thereby can produce connection by external contact (rail level (railinglevel)) or by the routing joint.
And several parts groups (for example being used for controlling the B6-bridge of three phase electric machine) insert cooperating very closely of single half-bridge permission parts group and the common of rail plate contacts from the top contact.Thereby the rail plate can electrically contact the individual module body via printed conductor very short and very low inductance.If desired, the also portability electric parts, transducer (for example current measurement) and the protectiveness shape (Fig. 8 and 9) that are used to control of this rail plate.
A variable is to utilize clamping device grip rails plate, be used for the rail plate and contact with module body (comprising the contact) pressure that strengthen, form fit, and module body contacts with pressure reinforcement, form fit of cooling body.This can prevent vibration, and obtains being connected safely of electricity and thermo-contact level.
Fig. 1 has shown the cross section of module body 40, band lead frame 12, has the semiconductor 14 of the contact 16 of cooperation, allows the connection by the pressure contact.Contact have have the angle, the Ω shape, two foots and two shanks are fixed on the circuit carrier by traditional technique for fixing (welding etc.), described foot and shank in addition by the bending that limits with improved mode flexibly against, and end at top outside plane domain 24 and connect two arms, being used for the inner surface of initial contact (during utilizing moulding material 10 molded) mould, is contact element then.
Fig. 2 has shown another selection, and the plane domain that replacement is connected with elastic leg has other screw thread 26, and the contact that is used for installing by screw thread connects.Replace screw thread, optionally, hole or square hole can be set, be used for the pressure contact by band angle or utilization band angle hole-round pin, it is of a size of and slightly surpasses opening to be created in maintenance firm in the recess.
Fig. 3 has shown the cross section of molding 40, have lead frame 12, have cooperation contact 16 semiconductor 14 and from volume, get rid of moulding material by elasticity of plastics sacrificial body (for example Teflon), be used for the space that plug connects with generation.Pin 28 in the space that produces can be contacted by the plug (not shown) then.Fig. 4 is the vertical view of this molding, wherein can see sequence arrangement among a plurality of screw threads or blind hole 26 and pin 28-Fig. 3.
Fig. 5 has shown that this elasticity of plastics sacrificial body (for example Teflon) also can make moulding material 10 recessed, is used for directly being connected the space 50 of the connection on lead frame or the punch grid with generation.
Further, Fig. 6 has shown and has been used for directly also can connecting under contacting along horizontal direction in the space of the connection on the lead frame or on the punch grid, if moulding material 10 is filled moldings 40 to the edge.Certainly, moulding material also can be removed subsequently, if residual too many moulding material during molded.Yet because the required work of subsequent treatment, advantage of the present invention is to exempt this subsequent treatment by the just size shape of insert.
Fig. 7 has shown the vertical view of the semiconductor module of Fig. 6, has to be used in direct-connected space on the lead frame or on the punch grid, and has an opportunity to arrive contact surface (for example utilizing ultrasonic bonding arm or line bonding tool) along horizontal direction.
At last, Fig. 8 has shown the cross section of several molding modules on common cooling body and the common track level (general line track cross level).Selectively, the also portability control element that is used for controlling and of track cross level (railing level) to the defencive function of the power component of molding.Selectively, screw thread, plug or the clamping through Fig. 1-7 connects the generation contact.Fig. 9 is similar to Fig. 8; Yet module is loaded onto and be connected to the track cross level 90 that shows separately among Fig. 8 now.Figure 10 has shown the embodiment of Fig. 9 again, yet, have other clamping device 94, cause between the module body vertical installing force and towards the heat-transfer surface of cooling body pressing body.Be furnished with flexible member 92 with transmission power between each clamping device 94 and the track plate.Thereby, the uniform distribution that produces clamping force.
At last, Figure 11 has shown another selection, and wherein contact is folded in the molding, and up to its upside (left side) or exclusionary zone (right side).These contacts also can be designed to flexible (not shown).About this point, the copper layer band (112) of part below semiconductor is folded to form vertical contact, and it forms pressure or bonding contact surface (114,124) on the upside of module of molded generation.In Figure 11,, be designed to cut or preferably arrive by the insert during molded at the regional visible contact surface 124 in the right side as among Fig. 6.
Claims (12)
1. contact semiconductor module straight up, have the lead frame that comprises substrate, be arranged in semiconductor and electrical contact on the substrate, it is characterized in that, described contact from conductor layer begin to form be positioned at described conductor layer under substrate side surfaces conduction contact (16 opposite, that be directed upwards towards; 28), described contact is arranged at least in part around described semi-conductive encapsulated type moulding material.
2. semiconductor module according to claim 1 is characterized in that, described contact is designed to have the elastic metallic tongue of bending area.
3. semiconductor module according to claim 1 and 2 is characterized in that, described contact (16; 28) be embedded in the moulding material described contact (16; 28) upside seals with described molded surface with flushing.
4. according to a described semiconductor module in the aforementioned claim, it is characterized in that described contact (16) comprises the blind hole that is suitable for holding plug in its upper end, described blind hole does not have moulding material.
5. semiconductor module according to claim 1 is characterized in that, described moulding material forms free space near the upper end of contact (28).
6. semiconductor module according to claim 5 is characterized in that, the described free space in the described moulding material has the size of the plugs right angle, a plurality of adjacent pin shape contacts of contact (28).
7. according to a described semiconductor module in the aforementioned claim, it is characterized in that, flexible contact (16) is arranged to upwards arrive described moulding material upside, and the recess in the moulding material of semiconductor module upside (50) is arranged to arrive copper conductive trace (12 downwards; 112).
8. according to a described semiconductor module in the aforementioned claim, it is characterized in that, the band (110) that part is positioned at the copper layer (112) of described semiconductor below is folded to form vertical contact site, and described vertical contact site forms by pressure contact surface on the module of molded generation or bonding contact surface (114; 124).
9. a manufacturing is according to the method for a described semiconductor module in the aforementioned claim, this semiconductor module has moulding material, it is characterized in that during moulding material was injected the lead frame superjacent air space, the contact surface of contact flexibly leaned against on the mold.
10. method according to claim 9 is characterized in that, during the space of moulding material being injected above the lead frame, the sacrificial body of accessible silicon or Teflon is inserted between lead frame and the mold to lean against on the mold at least.
11., it is characterized in that during the space of moulding material being injected above the lead frame, described sacrificial body is removedly around one or several contacts and be removed according to claim 9 or 10 described methods after molded.
12. according to a described method among the aforementioned claim 9-11, it is characterized in that, before injection molding, the bar that part is positioned at the copper layer (112) of described semiconductor below is folded to form vertical contact site, and described vertical contact site forms by pressure contact surface or bonding contact surface (114 on the module of molded generation; 124).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008029829.8 | 2008-06-25 | ||
| DE102008029829A DE102008029829B4 (en) | 2008-06-25 | 2008-06-25 | Vertical upwardly contacting semiconductor and method of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101615601A true CN101615601A (en) | 2009-12-30 |
| CN101615601B CN101615601B (en) | 2012-06-13 |
Family
ID=41495149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101398922A Expired - Fee Related CN101615601B (en) | 2008-06-25 | 2009-06-24 | Vertically upward contact semiconductor and method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101615601B (en) |
| DE (1) | DE102008029829B4 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104823277A (en) * | 2012-12-10 | 2015-08-05 | 罗伯特·博世有限公司 | Method for producing a switching module and an associated grid module, and an associated grid module and corresponding electronic subassembly |
| CN108231701A (en) * | 2016-12-11 | 2018-06-29 | 乾坤科技股份有限公司 | Wireless package module and preparation method thereof |
| WO2019011890A1 (en) | 2017-07-12 | 2019-01-17 | Abb Schweiz Ag | Power semiconductor module |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4658268B2 (en) | 2008-11-26 | 2011-03-23 | 三菱電機株式会社 | Power semiconductor module |
| JP5262793B2 (en) * | 2009-02-13 | 2013-08-14 | 三菱電機株式会社 | Power semiconductor device and manufacturing method thereof |
| JP5481680B2 (en) * | 2010-04-28 | 2014-04-23 | 三菱電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| DE102013206844A1 (en) * | 2013-04-16 | 2014-10-16 | Robert Bosch Gmbh | Electronic component and tool for the production of the component |
| US9196554B2 (en) | 2013-10-01 | 2015-11-24 | Infineon Technologies Austria Ag | Electronic component, arrangement and method |
| JP6249892B2 (en) * | 2014-06-27 | 2017-12-20 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| DE102015112451B4 (en) * | 2015-07-30 | 2021-02-04 | Danfoss Silicon Power Gmbh | Power semiconductor module |
| DE102018111989B4 (en) | 2018-05-18 | 2024-05-08 | Rogers Germany Gmbh | Electronic module and method for manufacturing the same |
| DE102018128097B4 (en) * | 2018-11-09 | 2022-08-11 | Infineon Technologies Ag | SEMICONDUCTOR POWER MODULE AND METHOD OF MANUFACTURING SEMICONDUCTOR POWER MODULE |
| DE102018133479A1 (en) | 2018-12-21 | 2020-06-25 | Rogers Germany Gmbh | Method for manufacturing an electronic module and electronic module |
| DE102019210902A1 (en) * | 2019-07-23 | 2021-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | CONNECTION METHOD FOR POWER MODULES WITH AN INTERMEDIATE CIRCUIT |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4538168A (en) * | 1981-09-30 | 1985-08-27 | Unitrode Corporation | High power semiconductor package |
| JPH09283681A (en) * | 1996-04-16 | 1997-10-31 | Hitachi Ltd | Semiconductor device |
| JPH09321216A (en) * | 1996-05-27 | 1997-12-12 | Toshiba Corp | Power semiconductor device |
| JP3971568B2 (en) * | 1999-11-29 | 2007-09-05 | 松下電器産業株式会社 | Semiconductor package and semiconductor package manufacturing method |
| JP2005109100A (en) * | 2003-09-30 | 2005-04-21 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| JP4569473B2 (en) * | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | Resin-encapsulated power semiconductor module |
| JP2007235004A (en) * | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | Semiconductor device |
| US8299603B2 (en) * | 2007-01-22 | 2012-10-30 | Mitsubishi Electric Corporation | Power semiconductor device |
-
2008
- 2008-06-25 DE DE102008029829A patent/DE102008029829B4/en not_active Expired - Fee Related
-
2009
- 2009-06-24 CN CN2009101398922A patent/CN101615601B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104823277A (en) * | 2012-12-10 | 2015-08-05 | 罗伯特·博世有限公司 | Method for producing a switching module and an associated grid module, and an associated grid module and corresponding electronic subassembly |
| CN108231701A (en) * | 2016-12-11 | 2018-06-29 | 乾坤科技股份有限公司 | Wireless package module and preparation method thereof |
| US10438907B2 (en) | 2016-12-11 | 2019-10-08 | Cyntec Co., Ltd. | Wireless package with antenna connector and fabrication method thereof |
| CN108231701B (en) * | 2016-12-11 | 2020-12-11 | 乾坤科技股份有限公司 | Wireless packaging module and manufacturing method thereof |
| WO2019011890A1 (en) | 2017-07-12 | 2019-01-17 | Abb Schweiz Ag | Power semiconductor module |
| US11362008B2 (en) | 2017-07-12 | 2022-06-14 | Hitachi Energy Switzerland Ag | Power semiconductor module embedded in a mold compounded with an opening |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008029829B4 (en) | 2012-10-11 |
| DE102008029829A1 (en) | 2010-03-18 |
| CN101615601B (en) | 2012-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101615601B (en) | Vertically upward contact semiconductor and method thereof | |
| KR102214418B1 (en) | Power electronics switching device, and an arrangement comprising the same | |
| CN106463420B (en) | Power semiconductor device and its manufacturing method | |
| CN104485321B (en) | Semiconductor die packages and its manufacture method | |
| CN101447442B (en) | Method for making a device including placing a semiconductor chip on a substrate | |
| CN104282641B (en) | Semiconductor device | |
| CN105765716B (en) | Power semiconductor modular and composite module | |
| CN102820288B (en) | Power model and its manufacture method | |
| CN105359262B (en) | The manufacturing method of semiconductor device, semiconductor device | |
| CN102522375B (en) | Semiconductor device, method for manufacturing semiconductor device, and lead frame | |
| CN102237332B (en) | Semiconductor device and method of manufacturing the same | |
| CN104025292B (en) | Semiconductor packages, its manufacture method and mould, the input and output terminal of semiconductor packages | |
| CN105225971B (en) | The manufacturing method of semiconductor device | |
| CN102348332B (en) | Circuit device and method of manufacturing the same | |
| CN104145331B (en) | Semiconductor device and its manufacture method | |
| CN205428897U (en) | Electronic device | |
| CN105679720B (en) | Radiator, electronic module including radiator and preparation method thereof | |
| JP2011049343A (en) | Electric power semiconductor device, and method for manufacturing the same | |
| CN102403296A (en) | Semiconductor module and method for production thereof | |
| JP6183226B2 (en) | Method for manufacturing power semiconductor device | |
| CN108962863A (en) | Capsulation body of semiconductor ship and its manufacturing method with cooling surface | |
| CN106098573B (en) | The manufacturing method of semiconductor device | |
| JP6673012B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN107204296A (en) | Mould the manufacture method and molding product of product | |
| CN104218007B (en) | Small footprint semiconductor packages |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120613 |