CN101609778B - Porous silicon field emission LED array and manufacturing technology thereof - Google Patents
Porous silicon field emission LED array and manufacturing technology thereof Download PDFInfo
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- CN101609778B CN101609778B CN2009101008847A CN200910100884A CN101609778B CN 101609778 B CN101609778 B CN 101609778B CN 2009101008847 A CN2009101008847 A CN 2009101008847A CN 200910100884 A CN200910100884 A CN 200910100884A CN 101609778 B CN101609778 B CN 101609778B
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Abstract
The invention relates to the technical field of field emission display, in particular to a porous silicon field emission LED array and a manufacturing technology thereof. The porous silicon field emission LED array comprises an anode plate, a cathode plate, fluorescent powder and porous silicon wafers, wherein, the anode plate consists of conductive glass and lead wire 1, the cathode plate consists of glass and lead wire 2, and the porous silicon wafers consist of a silicon substrate and porous silicon layers. The glass of the cathode plate is provided with m columns of silver paste conductive lead wires 2, and n porous silicon wafers are fixed in each column; a conductive layer is corroded into n rows of lead wires 1 on the conductive glass of the anode plate, the fluorescent powder is applied to the lead wires 1 on the face side of the glass of the anode plate, each row of lead wires is coated with m pieces of florescent powder paste, and area size of each piece of florescent powderpaste is slightly larger than that of the porous silicon wafers on the cathode plate; and the clearance between the anode plate and the cathode plate of the porous silicon field emission LED array forms a sealed cavity with vacuum degree smaller than 1 multiplied by 10<-5>Pa by a separant and sealing materials.
Description
Technical field
The present invention relates to the Field Emission Display technical field, particularly a kind of porous silicon field emission LED array and manufacturing technology thereof.
Background technology
Porous silicon (porous silicon is called for short PS) is that the aperture is porous material nanometer scale, spongiform, and the surface has little pointed cone, has electroluminescence, photoluminescence property.Therefore, since Uhlir in 1956 adopted anode oxidation method to prepare porous silicon first, increasing researcher was paid attention to the research, particularly during the nearly last ten years, it has caused extensive concern in the application prospect in microelectronics and optoelectronics field, becomes the focus of current research.
Present commercially available light-emitting diode (light emission diode) abbreviates LED as.By the compound of gallium (Ga) and arsenic (AS), phosphorus (P), the principle that can give off visible light when utilizing electronics in the PN junction and hole-recombination is made.For example gallium arsenide phosphide, AlGaInP (AlGaInP) diode glow, gallium phosphide diode green light, and silicon carbide diode jaundice light, gallium nitride (GaN) turns blue, green glow (day the present invention, price is very high).Commercially available diode has only red, yellow, blue minority color, and other is their secondary colour, and its color is undesirable.
Field emission LED is different with the principle of commercially available light-emitting diode, but identical with the research and development principle of light-emitting diode that with the carbon nano-tube is material.It is that the little pointed cone that utilizes nano-silicon can penetrate electronics by the width of cloth under certain field intensity, and electronics is beaten in that to scribble on the electro-conductive glass of fluorescent material (anode) luminous.
In field of display, conventional cathode-ray tube display (CRT) will be replaced by flat-panel monitor (FPD) gradually.Flat-panel monitor mainly can be divided into: LCD (LCD), plasma display (PDP), Organic Light Emitting Diode (OLED), Field Emission Display (FED).
LCD (LCD) has occupied more than 80% of flat-panel monitor share though present social owning amount occupies second, and the topped whole application of its product scope is the main product of flat-panel monitor.Its advantage is that volume is thin, in light weight.But because its core component less stable, can itself be not luminous and the visual angle is little, has limited its scope of application and display effect, finally substitute cathode-ray tube display (CRT), and is on the knees of the gods.
The advantage of plasma display (PDP) is that response speed is fast, near CRT.Shortcoming is the driving voltage height, power consumption is big, luminous efficiency is low, pixel pitch is big.In the long run, PDP will be a kind of transitional technology, because PDP only is applicable to large-screen and television receiver, and not be suitable for fields such as computer.
Organic Light Emitting Diode (OLED) takes advantage on large scale, low cost, but owing to the full-color panel life-span is shorter, about 5000 hours, still be confined to monochromatic demonstration field and use, limited its development.
Field Emission Display (FED) is similar to the principle of CRT, also belongs to vacuum electron beam stimulated luminescence Display Technique, shows that image quality is outstanding, but manufacture craft is different fully, and the key technology of FED is the making of emitting cathode.
The electron gun that Field Emission Display (FED) uses can reach N * M, Field Emission Display (FED) have required voltage low, adopt cold cathode, in light weight, thin thickness or the like advantage, it had both had a cathode ray tube (CRT) Display Technique bright in lusterly enriches, shows unlimited gray scale, be fit to show advantages such as animation, have also that flat-panel monitor is in light weight, thin thickness, advantage that volume is little, so Field Emission Display (FED) has the king's of display title, be finally to substitute the display cathode ray tube (CRT) Display Technique, more satisfactory.Countries in the world are all in developing mutually unexpectedly.
Field emission LED array can be used for monochrome or the polychrome advertisement shows, can be the product in early stage of development Field Emission Display FED, and the development of field emission LED array will help the display of Development of New Generation.Porous silicon is a kind of new material of nanometer scale, and the surface has 10
3-10
4Individual. μ m
-2Little pointed cone, under certain conditions, function with emitting electrons, even some little pointed cone is aging and lose the function of emitting electrons during work, also have the little pointed cone of another part and continue emitting electrons, have advantages such as good reliability, life-span length, so it is applicable to the negative electrode of making field emission LED, add that it is silicon materials, help more realizing that total silicon is photoelectronic integrated.At present, adopting porous silicon to make field emission LED does not appear in the newspapers.
Summary of the invention
Task of the present invention provides a kind of porous silicon field emission LED array and manufacturing technology thereof.
The technical solution adopted in the present invention is finished in the following way: a kind of porous silicon field emission LED array, it comprises positive plate, minus plate, fluorescent material and porous silicon chip, wherein, positive plate is made up of electro-conductive glass and lead-in wire one, electro-conductive glass is made up of glass substrate and conductive layer, and lead-in wire one is drawn from conductive layer; Minus plate is made up of glass and lead-in wire two, and porous silicon chip is made up of silicon base and porous silicon layer, and porous silicon layer is located at the silicon base end face; The aperture that is provided with as exhaust on glass at minus plate; The m row silver slurry conductive lead wire two that is provided with on glass at minus plate whenever lists fixedly n sheet porous silicon chip, constitutes n * m selective porous silicon; In on glass made its evenness of selective porous silicon of minus plate less than 10 μ m/cm; On the electro-conductive glass of positive plate, conductive layer is corroded into n line lead one, fluorescent material is coated with shoe on the lead-in wire one of positive plate glass front, be coated with on every line lead and carry out m piece fluorescent powder paste material, the area size of every fluorescent powder paste material is more bigger than porous silicon chip on the minus plate, constitutes n * m fluorescent material anode array; The minus plate of porous silicon field emission LED array and the gap between the positive plate constitute a vacuum degree 1 * 10 by separaant and encapsulant
-5The sealed cavity that Pa is following.
In porous silicon field emission LED array, the negative electrode of porous silicon field emission LED array and the clearance distance between the anode are 100～200 μ m.
Yin, yang two interpolars at porous silicon field emission LED array add certain electric field, and negative electrode will emitting electrons, and getting to when electronics will be luminous on the fluorescent material of anode; Adopt green emitting phosphor, with regard to green light; Adopt red fluorescence powder, just glow.
The manufacturing technology of a kind of porous silicon field emission LED array of the present invention may further comprise the steps:
1, the making of porous silicon chip
With the monocrystalline silicon piece of low-resistivity silicon base as porous silicon chip, monocrystalline silicon piece is placed on carries out electrochemical method corrosion in the etching tank, electrode adopts platinum (Pt), the mixed liquor that corrosive liquid adopts hydrofluoric acid and absolute ethyl alcohol to form, wherein, hydrofluoric acid employing concentration is 35%～45% hydrofluoric acid, and the volume proportion of the component in the corrosive liquid is: hydrofluoric acid (HF): absolute ethyl alcohol (C
2H
5OH)=1: 0.95～1.05; After monocrystalline silicon sheet surface generates porous silicon, use cation or anion that porous silicon is eliminated dangling bonds and handle, can obtain its surface after the processing and have 10
3-10
4Individual. μ m
-2The nanoporous silicon layer of little pointed cone.Use cation or anion to eliminate the porous silicon dangling bonds, can adopt the patent No. is that 02112389.6 the cathode reduction process for treating surface or the patent No. are 02112391.8 anode oxidizing process for treating surface.
In order to improve little pointed cone electron emission ability, little pointed cone surface can add materials such as a spot of metal, carbon nano-tube, zinc oxide.
2, make negative electrode
With thickness is that (100 * 100 * 2mm), minus plate is on glass to be beaten 2～3mm float glass process soda-lime glass glass of making minus plate
The 3mm aperture is as steam vent; Adopt silk-screen printing technique in the minus plate glass front with silver-colored pulp material, make silver slurry m row, adopt silk-screen printing technique at minus plate glass reverse side with silver-colored pulp material, make silver slurry negative electrode m row lead-in wire two and anode n line lead one, minus plate glass front silver slurry m row lead-in wire two is connected using the silver slurry with minus plate glass reverse side negative electrode m row lead-in wire; Porous silicon chip is cut into the small pieces of 0.2 * 0.2mm, makes adhesive with silver-colored pulp material, fixing n sheet porous silicon chip on every row silver slurry lead-in wire two, and spacing distance is identical, constitutes porous silicon n * m array in the minus plate glass front, requires evenness less than 10 μ m/cm.
3, make anode
Adopt photoetching technique with thickness for the 2mmITO electro-conductive glass, use HNO
3The ITO conductive layer on glass with the mixed acid solution etching conductive of HCI volume ratio 1: 2.05～3.05 makes it to become the capable conductive lead wire one of n, is coated with on conductive lead wire one with silk-screen printing technique and carries out cathode-ray fluorescent powder slurry; Be coated with on every capable conductive lead wire one and carry out m piece fluorescent powder paste material, area size is slightly larger than 0.2 * 0.2mm, and spacing distance is identical, constitutes porous silicon n * m array, and the capable conductive lead wire one of anode n is connected using lead with minus plate glass reverse side anode n line lead.
4, make separaant
With thickness is the separaant that the high temp glass of 670um is made into 1mm * 1mm * 670um.The effect of separaant is to guarantee the insulation of yin, yang the two poles of the earth, and keeps between cathode surface and the phosphor anode distance of 100～200um at interval, and prevents when vacuumizing, and breaks or is out of shape owing to the reason of atmospheric pressure causes cathode and anode.
5, Vacuum Package
1. apply the low-melting glass slurry with spray gun around the minus plate front, put into the Muffle furnace sintering, sintering temperature is 430 ℃～500 ℃, and is annealed to room temperature;
2. positive plate and burned minus plate are aimed at (emitting cathode point is aimed at fluorescent material), 8～12 separaants of middle evenly placement prevent to move and misplace with the agrafe clamping all around; Make the distance of interval 100～200um between cathode surface and the phosphor anode; At negative electrode version reverse side steam vent place, with glass powder with low melting point adhesive glass blast pipe, bleeding,---inflated with nitrogen---bleed again, puts into vacuum Muffle furnace sintering and annealing taking-up again by bleed---inflated with nitrogen---;
3. after sintering is finished, light emitting diode matrix, put into getter, bleeding,---inflated with nitrogen---bleed again, and carry out bakeout degassing by bleed---inflated with nitrogen---; 1 * 10
-5Pa vacuum lower sealing is finished the Vacuum Package operation.
The present invention compared with prior art has following characteristics:
1, easy to manufacture, required voltage is low, in light weight, thin thickness, volume are little.
2, help integrating, help realizing the microminiaturization of device with control circuit.
3, the porous silicon of its use is a kind of new material of nanometer scale, and the surface has 10
3-10
4Individual. μ m
-2Little pointed cone is done the negative electrode of field emission LED with it, even some little pointed cone is aging and lose the function of emitting electrons during work, also having the little pointed cone of another part continues emitting electrons, has advantages such as good reliability, life-span are long.
4, adopt an emission manufacturing technology, it had both had a cathode ray tube (CRT) Display Technique bright in lusterly enriches, shows unlimited gray scale, be fit to show special advantages such as animation, has also that flat-panel monitor is in light weight, a thin thickness, advantage that volume is little.
5, its product can show as advertisement, also is the product in early stage of research park emission display.
Description of drawings
Fig. 1 is the structural representation of porous silicon field emission LED array.
Embodiment
Contrast accompanying drawing below, the invention will be further described by embodiment.
With reference to accompanying drawing 1, a kind of porous silicon field emission LED 16 * 16 arrays, it comprises positive plate 1, minus plate 2, fluorescent material 3 and porous silicon chip 4, wherein, positive plate 1 is made up of electro-conductive glass and lead-in wire 1, electro-conductive glass is made up of glass substrate and conductive layer, goes between one 5 to draw from conductive layer; Minus plate 2 is made up of glass and lead-in wire 26, and porous silicon chip 4 is made up of silicon base and porous silicon layer, and porous silicon layer is located at the silicon base end face; At the aperture that is provided with as exhaust on glass of minus plate 2, the 16 row silver slurry conductive lead wires 26 that are provided with on glass at minus plate 2 whenever list and fix 16 porous silicon chips, constitute 16 * 16 selective porous silicons; In on glass made its evenness of selective porous silicon of minus plate 2 less than 10 μ m/cm; On the electro-conductive glass of positive plate 1, conductive layer is corroded into 16 line leads 1, fluorescent material 3 is coated with shoe on the lead-in wire 1 of positive plate 1 glass front, be coated with on every line lead and carry out 16 fluorescent powder paste materials, every size is more bigger than porous silicon chip on the minus plate, constitutes 16 * 16 fluorescent material anode array; The minus plate 2 and the gap between the positive plate 1 of field emission LED array constitute a vacuum degree 1 * 10 by separaant and encapsulant
-5The sealed cavity that Pa is following.In porous silicon field emission LED array, the negative electrode of field emission LED and the clearance distance between the anode are 100～200 μ m.
The manufacturing technology of a kind of porous silicon field emission LED array of the present invention may further comprise the steps:
1, the making of porous silicon chip
With resistivity is 0.01～0.03 Ω cm, the P type, the monocrystalline silicon piece of crystal face (100) is as the silicon base of porous silicon chip 4, monocrystalline silicon piece is placed on carries out electrochemical method corrosion in the etching tank, electrode adopts platinum (Pt), it is the mixed liquor that 35%～45% hydrofluoric acid and absolute ethyl alcohol are formed that corrosive liquid adopts concentration, and the configuration concentration volume ratio is HF: C
2H
5OH=1: 1: 0.95～1.05; After monocrystalline silicon sheet surface generates porous silicon, use cation that porous silicon is eliminated dangling bonds and handle, the employing patent No. is 02112389.6 cathode reduction process for treating surface, and porous silicon has been carried out surface treatment, can obtain its surface after the processing and have 10
3-10
4Individual. μ m
-2The nanoporous silicon layer of little pointed cone.
2, make negative electrode
With thickness is that (100 * 100 * 2mm), minus plate is on glass to be beaten the 2mm float glass process soda-lime glass glass of making minus plate
The 3mm aperture is as steam vent; Adopt silk-screen printing technique in the minus plate glass front with silver-colored pulp material, make silver slurry 16 row, adopt silk-screen printing technique at minus plate glass reverse side with silver-colored pulp material, make silver slurry negative electrode 16 row lead-in wire 26 and anode 16 line leads 1, minus plate glass front silver slurry 16 row are used the silver slurry with minus plate glass reverse side negative electrode 16 26 pairs in row lead-in wires and are connected; Porous silicon chip 4 is cut into the small pieces of 0.2 * 0.2mm, makes adhesive with silver-colored pulp material, fixes 16 porous silicon chips on every row silver slurry lead-in wire 26, and spacing distance is identical, constitutes porous silicon 16 * 16 arrays in the minus plate glass front, requires evenness less than 10 μ m/cm.
3, make anode
Adopt photoetching technique with thickness for the 2mmITO electro-conductive glass, use HNO
3The ITO conductive layer on glass with the mixed acid solution etching conductive of HCI volume ratio 1: 2.05～3.05, make it to become 16 row conductive lead wires 1, on conductive lead wire 1, be coated with shoe cathode-ray green emitting phosphor 3 with silk-screen printing technique, every size is slightly larger than 0.2 * 0.2mm, spacing distance is identical, constitute porous silicon n * m array, anode 16 row conductive lead wires 1 are connected using lead with minus plate glass reverse side anode 16 line leads.
4, make separaant
With thickness is the separaant that the high temp glass of 670um is made into 1mm * 1mm * 670um.The effect of separaant is to guarantee the insulation of yin, yang the two poles of the earth, and keeps between cathode surface and the phosphor anode distance of 100～200um at interval, and prevents when vacuumizing, and breaks or is out of shape owing to the reason of atmospheric pressure causes cathode and anode.
5, Vacuum Package
1. minus plate 2 is positive all around with spray gun coating low-melting glass slurry, puts into Muffle furnace sintering (temperature is 430～500 ℃) and is annealed to room temperature;
2. positive plate 1 and burned minus plate 2 are aimed at (emitting cathode point is aimed at fluorescent material), 8 separaants of middle evenly placement prevent to move and misplace with the agrafe clamping all around; Make the distance of interval 200um between cathode surface and the phosphor anode; At negative electrode version reverse side steam vent place, with glass powder with low melting point adhesive glass blast pipe, bleeding,---inflated with nitrogen---bleed again, puts into vacuum Muffle furnace sintering and annealing taking-up again by bleed---inflated with nitrogen---;
3. after sintering is finished, light emitting diode matrix, put into getter, bleeding,---inflated with nitrogen---bleed again, and carry out bakeout degassing by bleed---inflated with nitrogen---; 1 * 10
-5Pa vacuum lower sealing is finished the Vacuum Package operation.
With reference to accompanying drawing 1, a kind of porous silicon field emission LED 8 * 8 arrays, the structure of this porous silicon field emission LED array is identical with embodiment 1.In the manufacturing process of this porous silicon field emission LED array, when the making of porous silicon chip, it is the mixed liquor that 35% hydrofluoric acid and absolute ethyl alcohol are formed that corrosive liquid adopts concentration, and the configuration concentration volume ratio is HF: C
2H
5OH=1: 0.95; All the other are identical with the manufacturing technology of porous silicon field emission LED array among the embodiment 1.In order to improve little pointed cone electron emission ability of the porous silicon layer on the porous silicon chip 4, little pointed cone surface can add a spot of metal material; Anode adopts red fluorescence powder.
With reference to accompanying drawing 1, a kind of porous silicon field emission LED 8 * 8 arrays, the structure of this porous silicon field emission LED array is identical with embodiment 1.In the manufacturing process of this porous silicon field emission LED array, when the making of porous silicon chip, it is the mixed liquor that 45% hydrofluoric acid and absolute ethyl alcohol are formed that corrosive liquid adopts concentration, and the configuration concentration volume ratio is HF: C
2H
5OH=1: 1.05, after monocrystalline silicon sheet surface generates porous silicon, use anion that porous silicon is eliminated dangling bonds and handle, the employing patent No. is 02112391.8 anode oxidizing process for treating surface, porous silicon has been carried out surface treatment, can obtain its surface after the processing and have 10
3-10
4Individual. μ m
-2The nanoporous silicon layer of little pointed cone; All the other are identical with the manufacturing technology of porous silicon field emission LED array among the embodiment 1.In order to improve little pointed cone electron emission ability of the porous silicon layer on the porous silicon chip 4, little pointed cone surface can add a spot of carbon nano-tube material; Anode adopts blue colour fluorescent powder.
Embodiment 4
With reference to accompanying drawing 1, a kind of porous silicon field emission LED 32 * 32 arrays, the structure of this porous silicon field emission LED array and manufacturing technology are identical with embodiment 1, in order to improve little pointed cone electron emission ability of the porous silicon layer on the porous silicon chip 4, little pointed cone surface can add a spot of zinc oxide material; Anode adopts white fluorescent powder.
Claims (11)
1. porous silicon field emission LED array, it is characterized in that this porous silicon field emission LED array comprises positive plate, minus plate, fluorescent material and porous silicon chip, positive plate is made up of electro-conductive glass and lead-in wire one, electro-conductive glass is made up of glass substrate and conductive layer, and lead-in wire one is drawn from conductive layer; Minus plate is made up of glass and lead-in wire two, and porous silicon chip is made up of silicon base and porous silicon layer, and porous silicon layer is located at the silicon base end face; The aperture that is provided with as exhaust on glass at minus plate; The m row silver slurry conductive lead wire two that is provided with on glass at minus plate whenever lists fixedly n sheet porous silicon chip, constitutes n * m selective porous silicon; On the electro-conductive glass of positive plate conductive layer is corroded into n line lead one, fluorescent material is coated with shoe on the lead-in wire one of positive plate glass front, is coated with on every line lead to carry out m piece fluorescent powder paste material, constitutes n * m fluorescent material anode array; The minus plate of field emission LED array and the gap between the positive plate constitute a vacuum degree 1 * 10 by separaant and encapsulant
-5The sealed cavity that Pa is following.
2. porous silicon field emission LED array according to claim 1, the porous silicon layer of porous silicon chip that it is characterized in that porous silicon field emission LED array is as the negative electrode of field emission, and porous silicon layer is made by the nanoporous silicon materials.
3. porous silicon field emission LED array according to claim 1, the anode that it is characterized in that porous silicon field emission LED array is coated with shoe on the conductive layer of electro-conductive glass and constitute n * m fluorescent material anode array by the cathode-ray fluorescent powder.
4. porous silicon field emission LED array according to claim 1 is characterized in that the negative electrode of porous silicon field emission LED array constitutes described n * m porous silicon cathode array by nano-structure porous silicon.
5. according to claim 1,2,3 or 4 described porous silicon field emission LED arrays, it is characterized in that porous silicon field emission LED array, constitute a vacuum degree 1 * 10 by separaant and encapsulant by anode array and cathode array
-5The diode array that Pa is following.
6. porous silicon field emission LED array according to claim 1 is characterized in that the negative electrode of porous silicon field emission LED array and the clearance distance between the anode are 100～200 μ m.
7. porous silicon field emission LED array according to claim 1 and 2, the area size that it is characterized in that being coated with the every piece fluorescent powder paste material of shoe on the lead-in wire one of positive plate glass front is more bigger than the area size of the porous silicon chip on the minus plate.
8. the manufacture method of a porous silicon field emission LED array is characterized in that the manufacture method of this porous silicon field emission LED array may further comprise the steps:
(1) making of porous silicon chip
With resistivity is the silicon base of the monocrystalline silicon piece of 0.01～0.03 Ω cm as porous silicon chip, monocrystalline silicon piece is placed on carries out electrochemical method corrosion in the etching tank, electrode adopts platinum (Pt), the mixed liquor that corrosive liquid adopts hydrofluoric acid and absolute ethyl alcohol to form, wherein, hydrofluoric acid employing concentration is 35%～45% hydrofluoric acid, and the volume proportion of the component in the corrosive liquid is: hydrofluoric acid: absolute ethyl alcohol (C
2H
5OH)=1: 0.95～1.05; After monocrystalline silicon sheet surface generates porous silicon, use cation or anion that porous silicon is eliminated dangling bonds and handle, can obtain its surface after the processing and have 10
3-10
4Individual. μ m
-2The nanoporous silicon layer of little pointed cone;
(2) make negative electrode
With thickness is the glass that 2～3mm float glass process soda-lime glass is made minus plate, and minus plate is on glass to be beaten
Aperture is as steam vent; Adopt silk-screen printing technique in the minus plate glass front with silver-colored pulp material, make silver slurry m row, adopt silk-screen printing technique at minus plate glass reverse side with silver-colored pulp material, make silver slurry negative electrode m row lead-in wire two and anode n line lead one, minus plate glass front silver slurry m row lead-in wire two is connected using the silver slurry with minus plate glass reverse side negative electrode m row lead-in wire; Porous silicon chip is cut into the small pieces of 0.2 * 0.2mm, makes adhesive with silver-colored pulp material, fixing n sheet porous silicon chip on every row silver slurry lead-in wire two, and spacing distance is identical, constitutes porous silicon n * m array in the minus plate glass front, requires evenness less than 10 μ m/cm;
(3) make anode
With thickness is that 2mm ITO electro-conductive glass adopts photoetching technique, uses HNO
3The ITO conductive layer on glass with the mixed acid solution etching conductive of HCI volume ratio 1: 2.05～3.05, make it to become the capable conductive lead wire one of n, on conductive lead wire one, be coated with shoe cathode-ray fluorescent powder slurry with silk-screen printing technique, be coated with on every capable conductive lead wire one and carry out m piece fluorescent powder paste material, the area size of every fluorescent powder paste material is slightly larger than 0.2 * 0.2mm, spacing distance is identical, constitute fluorescent material n * m array, the capable conductive lead wire one of anode n is connected using lead with minus plate glass reverse side anode n line lead;
(4) make separaant
With thickness is the separaant that the high temp glass of 670 μ m is made into 1mm * 1mm * 670 μ m, the effect of separaant is to guarantee the insulation of yin, yang the two poles of the earth, and keep between cathode surface and the phosphor anode distance of 100～200 μ m at interval, and prevent when vacuumizing, break or be out of shape owing to the reason of atmospheric pressure causes cathode and anode;
(5) Vacuum Package
1. apply the low-melting glass slurry with spray gun around the minus plate front, put into the Muffle furnace sintering, sintering temperature is 430 ℃～500 ℃, and is annealed to room temperature;
2. positive plate and burned minus plate are aimed at, being about to emitting cathode point aims at the fluorescent material that is coated with shoe, 8～12 separaants of middle evenly placement, clamp with agrafe all around and prevent to move and misplace, make the distance of interval 100～200 μ m between cathode surface and the phosphor anode, at minus plate reverse side steam vent place, with glass powder with low melting point adhesive glass blast pipe, bleeding,---inflated with nitrogen---bleed again, puts into vacuum Muffle furnace sintering and annealing taking-up again by bleed---inflated with nitrogen---;
3. after sintering is finished, light emitting diode matrix, put into getter, bleeding,---inflated with nitrogen---bleed again, and carry out bakeout degassing, 1 * 10 by bleed---inflated with nitrogen---
-5Pa vacuum lower sealing is finished the Vacuum Package operation.
9. the manufacture method of porous silicon field emission LED array according to claim 8 is characterized in that little pointed cone surface adds a spot of metal material.
10. the manufacture method of porous silicon field emission LED array according to claim 8 is characterized in that little pointed cone surface adds a spot of carbon nano-tube material.
11. the manufacture method of porous silicon field emission LED array according to claim 8 is characterized in that little pointed cone surface adds a spot of zinc oxide material.
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| CN1287678A (en) * | 1998-08-26 | 2001-03-14 | 松下电工株式会社 | Field emission source array, method for producing the same, and its use |
| CN1396316A (en) * | 2002-07-04 | 2003-02-12 | 华东师范大学 | Anode oxidizing process for treating surface of porous silicon |
| CN1396315A (en) * | 2002-07-04 | 2003-02-12 | 华东师范大学 | Cathode reduction process for treating surface of porous silicon |
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|---|---|---|---|---|
| CN1287678A (en) * | 1998-08-26 | 2001-03-14 | 松下电工株式会社 | Field emission source array, method for producing the same, and its use |
| CN1396316A (en) * | 2002-07-04 | 2003-02-12 | 华东师范大学 | Anode oxidizing process for treating surface of porous silicon |
| CN1396315A (en) * | 2002-07-04 | 2003-02-12 | 华东师范大学 | Cathode reduction process for treating surface of porous silicon |
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| Title |
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| 孙建刚.多孔硅的有效场致发射.《半导体技术》.2006,第31卷(第4期),全文. * |
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