CN101609647A - Touch control organic light-emitting diode display device and image unit - Google Patents
Touch control organic light-emitting diode display device and image unit Download PDFInfo
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- CN101609647A CN101609647A CNA200910161023XA CN200910161023A CN101609647A CN 101609647 A CN101609647 A CN 101609647A CN A200910161023X A CNA200910161023X A CN A200910161023XA CN 200910161023 A CN200910161023 A CN 200910161023A CN 101609647 A CN101609647 A CN 101609647A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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Abstract
The invention provides a kind of touch control organic light-emitting diode display device and image unit, it comprises gate drivers, source electrode driver and a plurality of unit.Gate drivers is used for producing sweep signal.Source electrode driver is used for producing data-signal.A plurality of unit are arranged, and each unit comprises the first transistor, transistor seconds, Organic Light Emitting Diode, storage capacitors, infrared light emission layer and infrared ray photographic layer, and the first transistor is used for when receiving this sweep signal, this data-signal of conducting.Transistor seconds is used for producing drive current according to the pressure reduction between power supply signal and data-signal.Storage capacitors is used for storing this data-signal.Organic Light Emitting Diode is used for producing light according to this drive current.The infrared light emission layer is used for sending infrared ray.The infrared ray photographic layer is used for responding to this infrared ray that reflects from a reverberation.
Description
Technical field
The invention relates to a kind of organic LED display device, refer to a kind of touch control organic light-emitting diode display device especially.
Background technology
Function advanced person's display gradually becomes the valuable feature of consumption electronic product now, and wherein organic LED display device has become the display that various electronic equipments such as TV, mobile phone, personal digital assistant (PDA), digital camera, computer screen or the widespread use of notebook computer screen institute have the colored screen of high-res gradually.
Being different from common on the market organic LED display device is to utilize the voltage decision pixel intensity that is added in liquid crystal pixel, (Organic Light Emitting Display, OLED) luminous intensity is by LED forward bias voltage drop electric current decision pixel intensity to organic LED display device.Organic LED display device utilizes the autoluminescence technology, does not only need back lighting, can also provide than organic LED display device response time faster.In addition, organic LED display device even also have preferable correlative value and broad advantages such as visual angle.And, organic LED display device can use the substrate technology of existing thin film transistor (TFT) organic LED display device to make, and common active organic LED display device is to use amorphous silicon (a-Si) or low temperature polycrystalline silicon (LTPS) substrate at present.
Because organic LED display device carries for convenience and uses now, the touch control organic light-emitting diode display panel that the user can directly touch also becomes the direction of the market development.Resistance-type traditionally or capacitance touching control organic LED display panel, it is that extra resistance capacitance element is set on panel, and judges the position coordinates that presses through the variation that detects the touch point magnitude of voltage.Yet, because elements such as resistance capacitance are to be set directly on the panel, thus can cause the light penetration rate of organic LED display panel to descend, and increase the integral thickness of panel.Another kind of optical touch control panel then is that a large amount of light sources and corresponding optics sensing element are set around organic LED display panel, and the light that utilizes the optics sensing element whether to detect corresponding light source is judged the position coordinates of touch point.Optical touch control panel has two kinds of sensing modes: light covers pattern (Optical shadow type) and light reflective-mode (Optical reflective type).
Light covers pattern and is meant under the operational circumstances of surround lighting abundance, can judge whether touch according to the variation of surround lighting.For instance, in a space of becoming clear, when pressing on a pixel, the ambient light brightness that the ambient light brightness that the optical inductor of this touched pixel is responded to is responded to than the optical inductor of other pixel comes lowly when object (for example finger, pointer or the like).And the organic LED display device system can judge that the pixel of sensing less brightness is touched pixel, otherwise the pixel of other big brightness is not touched pixel.
The light reflective-mode is meant and detects the action of induction touching according to the catoptrical variation of organic LED display panel backlight under the faint state of surround lighting.For instance, in a dim room, this moment, the light luminance of backlight was big than the brightness of surround lighting.When object (for example finger, pointer or the like) when pressing on a pixel, because the light from backlight can reflex on the optical inductor of touched pixel via this object, the light luminance that the light luminance that the optical inductor of touched pixel is responded to is responded to than the optical inductor of other pixel is greater.The organic LED display device system can judge that the pixel of sensing big brightness is touched pixel, otherwise the pixel of other less brightness is not touched pixel.
Yet, because the light that backlight produces has been quite faint after reflection, therefore under the more weak environment of surround lighting, the common sensed signal of optical inductor a little less than, the signal distinguishing degree is relatively poor.Moreover for required position of touch, if when figure is the picture of low GTG (for example black) on every side, desire to carry out the action of figure towing this moment, easier of the pixel light quantity not sufficient, and cause the problem that can't respond to.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of touch control organic light-emitting diode display device, with infrared light emission layer, infrared induction unit and together OLED integrated.Under the light reflective-mode, whether organic LED display device adopts the ultrared size of detection to decide pixel touched, to solve prior art problems.
The purpose of this invention is to provide a kind of organic LED display device, it comprises gate drivers, source electrode driver and a plurality of unit.Gate drivers is used for producing sweep signal.Source electrode driver is used for producing data-signal.A plurality of unit are arranged, and each unit comprises the first transistor, transistor seconds, storage capacitors, Organic Light Emitting Diode, infrared light emission layer and infrared ray photographic layer.This first transistor is used for when receiving this sweep signal, this data-signal of conducting.This transistor seconds is used for producing a drive current according to the pressure reduction between first power supply signal and this data-signal, and the two ends of this storage capacitors are respectively coupled to the output terminal of this first transistor and this transistor seconds, are used for storing this data-signal.This Organic Light Emitting Diode is used for producing light according to this drive current.The infrared light emission layer is used for sending infrared ray.This infrared ray photographic layer is used for responding to this infrared ray that reflects from a reverberation.
According to the present invention, organic LED display device comprises a processing unit in addition, is used for this infrared ray according to the induction of this infrared ray photographic layer, determines the position of this reverberation corresponding to these unit.
According to the present invention, this infrared light emission layer is intended to be when receiving this first power supply signal, sends this infrared ray.This organic LED display device comprises a detecting unit in addition, is used for detecting a brightness of this organic LED display device, when this brightness during less than a preset value, starts this first power supply signal.
According to the present invention, each unit comprises power electrode metal level, first in addition and shows that anode, second shows anode and cathodic metal layer.The power electrode metal level is used for this first power supply signal of conducting.First shows that anode is arranged on this transistor.Second shows that anode is arranged on this power electrode metal level.The cathodic metal layer is arranged at that this first shows anode, this second shows on anode, this Organic Light Emitting Diode and this infrared light emission layer, is used for conducting second source signal.This Organic Light Emitting Diode is arranged between this first demonstration anode and this cathodic metal layer, and this infrared light emission layer is arranged between this second demonstration anode and this cathodic metal layer.
According to the present invention, this infrared light emission layer is an Organic Light Emitting Diode.This Organic Light Emitting Diode is to be used for sending red, green, blue coloured light line.This infrared ray photographic layer is that a Silicon-rich photo-sensitive cell or a PN connect a face photo-sensitive cell or an amorphous silicon film transistor photo-sensitive cell.
Description of drawings
Fig. 1 is the functional block diagram of the organic LED display device of shift registor of the present invention;
Fig. 2 A is the equivalent circuit diagram of the viewing area of Fig. 1;
Fig. 2 B is the equivalent circuit diagram of infrared light emission layer of the infrared of Fig. 1;
Fig. 2 C is the equivalent circuit diagram of infrared ray photographic layer of the infrared of Fig. 1;
Fig. 3 A is the sectional view of the infrared light emission layer of Fig. 2 B;
Fig. 3 B is the sectional view of the infrared ray photographic layer of Fig. 2 C.
Drawing reference numeral:
10 organic LED display devices, 12 organic LED display panels
14 gate drivers, 16 source electrode drivers
18 processing units, 15 detecting units
20 image units, 22 the first transistors
30 viewing areas, 32 infrareds
34 storage capacitors, 202 substrates
215 drain electrodes of 213 source electrodes
208 semiconductor layers, 210 gate insulators
211 gate metals, 212 interlayer insulating films
218 metal levels, 220 smooth protective seams
228 power electrode metal level 222a, 222b show anode
24 Organic Light Emitting Diodes, 25 transistor secondses
26 infrared light emission layers, 28 infrared ray photographic layer
Embodiment
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
See also Fig. 1, Fig. 1 is the functional block diagram of the organic LED display device 10 of shift registor of the present invention.(Organic Light Emitting Display, OLED) 10 comprise organic LED display panel 12, gate drivers (gate driver) 14, source electrode driver (source driver) 16, processing unit 18 and detecting unit 15 to organic LED display device.Organic LED display panel 12 comprises a plurality of image units 20 that are arranged, and each image unit 20 comprises and represents trichromatic viewing area 30 of RGB (RGB) and infrared 32 respectively.Infrared 32 comprises infrared light emission layer 26 and infrared ray photographic layer 28.Infrared light emission layer 26 is used for sending infrared ray.Infrared ray photographic layer 28 is used for responding to the infrared ray that reflects from a reverberation.
See also Fig. 2 A, Fig. 2 B and Fig. 2 C, Fig. 2 A is the equivalent circuit diagram of the viewing area 30 of Fig. 1, Fig. 2 B is the equivalent circuit diagram of infrared light emission layer 26 of the infrared 32 of Fig. 1, and Fig. 2 C is the equivalent circuit diagram of infrared ray photographic layer 28 of the infrared 32 of Fig. 1.Each viewing area 30 comprises the first transistor 22, Organic Light Emitting Diode 24, storage capacitors 34 and transistor seconds 25.The input end of the first transistor 22 is coupled to source electrode driver 16, the control end of the first transistor 22 is coupled to gate drivers 14, the output terminal of the first transistor 22 couples the control end of transistor seconds 25, the input end of transistor seconds 25 is coupled to the first power supply signal Vdd, and the output terminal of transistor seconds 25 is coupled to Organic Light Emitting Diode 24.The first transistor 22 is used for when receiving the sweep signal Vscan that transmits from gate drivers 14, and conducting is from the data-signal Vdata of source electrode driver 16.This moment, transistor seconds 25 produced the electric current of different sizes according to power supply signal Vdd and the pressure reduction between data-signal Vdata.Organic Light Emitting Diode 24 then the flow through electric current of transistor seconds 25 of foundation sends the light of Red Green Blue, adjusts the ratio that penetrates three primary colors light and produces different GTGs according to data-signal Vdata again.The two ends of storage capacitors 34 are respectively coupled to the control end of Organic Light Emitting Diode 24 and transistor seconds 25.
The organic LED display device 10 of present embodiment has two kinds of modes of operation under the brightness of varying environment light.Under the stronger state of surround lighting, when pressing on an image unit 20, the ambient light brightness that the ambient light brightness that touched image unit 20 is responded to is responded to than other image unit 20 comes lowly when object (for example finger, pointer or the like).And organic LED display device 10 can judge that the pixel of sensing less brightness is touched pixel, otherwise the pixel of other big brightness is not touched pixel.Under the faint state of surround lighting, when object pressed on an image unit 20, power supply signal Vdd can start made infrared light emission layer 26 send infrared ray, and infrared ray photographic layer 28 then is used for responding to the infrared ray that reflects.If when the infrared ray photographic layer 28 of an image unit 20 does not sense infrared ray, then meaning has this image unit 20 not have touched.Otherwise,, mean that then this image unit 20 is touched if when the infrared ray photographic layer 28 of an image unit 20 senses infrared ray.At last, processing unit 18 is used for according to the infrared ray of infrared ray photographic layer 28 inductions, and the decision object is corresponding to the position of image unit 20.Preferably, the brightness of detecting unit 15 meeting ambient light.Under the more weak environment of surround lighting, detecting unit 15 can be controlled power supply signal Vdd conducting infrared light emission layer 26 to produce infrared ray, and under the stronger state of surround lighting, power supply signal Vdd can 26 event of conducting infrared light emission layer can not produce infrared ray, to reduce power consumption.Because of human eye and can't the identification infrared ray, so under the darker environment of light luminance, the infrared ray that infrared light emission layer 26 produces can not influence the contrast of pixel originally yet.Even, cause the problem that to respond to because of the pixel light quantity not sufficient so the figure around the position of position of touch is when hanging down the picture of GTG (for example black), also not have prior art to desire to carry out the action of figure towing.
See also Fig. 3 A and Fig. 3 B, Fig. 3 A is the sectional view of the infrared light emission layer 26 of Fig. 2 B, and Fig. 3 B is the sectional view of the infrared ray photographic layer 28 of Fig. 2 C.As shown in Figure 3A, deposition one deck amorphous silicon membrane (not shown) on glass substrate 202, and, make this amorphous silicon membrane recrystallize into the polysilicon membrane (not shown) by annealing processs such as excimer lasers.Then this polysilicon membrane is carried out little shadow etching, can obtain the pattern of required semiconductor layer 208.At semiconductor layer 208 surface depositions one gate insulator 210.Carry out a deposit metal films technology then, forming layer of metal film (not shown)s, and carry out little shadow etching (PEP), obtain gate metal 211 with etching in gate insulator 210 surface.Can utilize gate metal 211 as the self-aligned shade subsequently, semiconductor layer 208 is carried out boron implanting ions technology, in semiconductor layer 208, to form source electrode 213 and drain electrode 215.Note that the first transistor 22 that is comprise source electrode 213, drain electrode 215 and gate metal 211.
Then deposit interbedded insulating layer (inter-layer dielectric, ILD) 212, and cover gate metal 211 and gate insulator 210.Afterwards, form a power electrode metal level 228 on interlayer insulating film 212.Next, carry out little shadow etching again in order to remove the part interlayer insulating film 212 and the gate insulator 210 of source electrode 213 and drain electrode 215 tops, until source electrode 213 and drain electrode 215 surfaces, to form a plurality of interlayer holes respectively at drain electrode 215 and source electrode 213 tops.
Next, carry out another metal deposition process and little shadow etching with the metal level 218 that etches signal wire, drain metal etc. on the interlayer hole surface, and be electrically connected source electrode 213 and drain electrode 215 respectively.Then deposit a smooth protective seam (planarization layer) 220 on metal level 218 and interlayer insulating film 212, and carry out little shadow etching with the partial protection layer 220 of the metal level 218 that remove to be electrically connected drain electrode 215 and power electrode metal level 228 tops and produce the electrode interlayer hole on metal level 218 and power electrode metal level 228.
Then, (Indium Tin Oxide, transparent conductive film (not shown) ITO) and is carried out little shadow etching to define demonstration anode (Anode) 222a, the 222b of suitable size on protective seam 220 to form tin indium oxide again.Subsequently again respectively at showing that anode 222a, 222b surface are formed with OLED 24 and infrared light emission layer 26.Please note, Organic Light Emitting Diode 24 and infrared light emission layer 26 material are all Organic Light Emitting Diode, so whole technology only needs when evaporation image unit 20, be used for sending the trichromatic Organic Light Emitting Diode 24 except evaporation is original, infrared light emission layer 26 evaporation that additionally with material are Organic Light Emitting Diode again get on to get final product, so highly compatible is in technology originally.Show in addition between anode 222a and the 222b not link to each other that Organic Light Emitting Diode 24 does not also link to each other with infrared light emission layer 26.At last, cathodic metal layer 226 is formed at the making that can finish organic LED panel 12 on Organic Light Emitting Diode 24 and the infrared light emission layer 26.Show that anode 222a can receive the data-signal that the first transistor 22 transmits, and Organic Light Emitting Diode 24 is exactly to decide the GTG that emits beam according to the power supply signal Vss that data-signal that shows anode 222a and cathodic metal layer 226 are coupled.And power supply signal metal level 228 can receive the power supply signal Vdd that transmits and will be sent to and show that anode 222b, 26 on infrared light emission layer decide according to the power supply signal Vss that power supply signal Vdd that shows anode 222b and cathodic metal layer 226 are coupled to send infrared ray.
Compared to prior art, each unit of organic LED display device of the present invention combines the infrared light emission layer and the infrared ray photographic layer of Organic Light Emitting Diode material.So under the more weak environment of surround lighting, still can see through the coordinate position that ultrared size is responded to the touching unit.Even the figure around the position of required position of touch be when hanging down the picture of GTG, can be because of the pixel light quantity not sufficient yet, and cause the problem that can't respond to.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing various changes and modification, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (19)
1. an organic LED display device is characterized in that, described organic LED display device comprises:
One gate drivers is used for producing the one scan signal;
The one source pole driver is used for producing a data-signal;
A plurality of unit, described a plurality of unit are arranged, and each unit comprises:
The first transistor is used for when receiving described sweep signal the described data-signal of conducting;
Transistor seconds is used for producing a drive current according to the pressure reduction between first power supply signal and described data-signal;
One storage capacitors, its two ends are respectively coupled to the output terminal of described the first transistor and described transistor seconds, are used for storing described data-signal;
One Organic Light Emitting Diode is used for producing a light according to described drive current;
One infrared light emission layer is used for sending an infrared ray; And
One infrared ray photographic layer is used for responding to the described infrared ray that reflects from a reverberation.
2. organic LED display device as claimed in claim 1, it is characterized in that, described organic LED display device also comprises a processing unit, is used for described infrared ray according to the induction of described infrared ray photographic layer, determines the position of described reverberation corresponding to described unit.
3. organic LED display device as claimed in claim 1 is characterized in that, described infrared light emission layer is used for sending described infrared ray when receiving described first power supply signal.
4. organic LED display device as claimed in claim 3, it is characterized in that, described organic LED display device also comprises a detecting unit, be used for detecting described organic LED display device one brightness, when described brightness during, start described first power supply signal less than a preset value.
5. organic LED display device as claimed in claim 3 is characterized in that, each unit comprises in addition:
One power electrode metal level is used for described first power supply signal of conducting;
First shows anode, is arranged on the described transistor;
Second shows anode, is arranged on the described power electrode metal level; And
One cathodic metal layer is arranged at described first and shows that anode, described second shows on anode, described Organic Light Emitting Diode and the described infrared light emission layer, is used for conducting second source signal;
Wherein said Organic Light Emitting Diode is arranged at described first and shows between anode and the described cathodic metal layer, and described infrared light emission layer is arranged at described second and shows between anode and the described cathodic metal layer.
6. organic LED display device as claimed in claim 1 is characterized in that, described infrared light emission layer is an Organic Light Emitting Diode.
7. organic LED display device as claimed in claim 1 is characterized in that, described Organic Light Emitting Diode is used for sending red, green, blue coloured light line.
8. organic LED display device as claimed in claim 1, it is characterized in that described infrared ray photographic layer is that a Silicon-rich photo-sensitive cell (silicon ruch sensor) or a PN connect a face photo-sensitive cell (P-I-Nsensor) or an amorphous silicon film transistor photo-sensitive cell (a-Si TFT sensor).
9. organic LED display device as claimed in claim 1, it is characterized in that, the input end of described the first transistor is coupled to described source electrode driver, the control end of described the first transistor is coupled to described gate drivers, the output terminal of described the first transistor couples the control end of described transistor seconds, the input end of described transistor seconds is coupled to described first power supply signal, and the output terminal of described transistor seconds is coupled to described Organic Light Emitting Diode.
10. organic LED display device as claimed in claim 1 is characterized in that the two ends of described storage capacitors are respectively coupled to the control end of described Organic Light Emitting Diode and described transistor seconds.
11. an image unit is used for a display, it is characterized in that, described image unit comprises:
The first transistor is used for when receiving the one scan signal conducting one data-signal;
Transistor seconds is used for producing a drive current according to the pressure reduction between first power supply signal and described data-signal;
One storage capacitors, its two ends are respectively coupled to the output terminal of described the first transistor and described transistor seconds, are used for storing described data-signal;
One Organic Light Emitting Diode is used for producing a light according to described drive current;
One infrared light emission layer is used for sending an infrared ray; And
One infrared ray photographic layer is used for responding to the described infrared ray that reflects from a reverberation.
12. image unit as claimed in claim 11 is characterized in that, described infrared light emission layer is an Organic Light Emitting Diode.
13. image unit as claimed in claim 11 is characterized in that, described infrared light emission layer is used for sending described infrared ray when receiving described first power supply signal.
14. image unit as claimed in claim 13 is characterized in that, described first power supply signal starts during less than a preset value according to the brightness of described unit environment of living in.
15. image unit as claimed in claim 14 is characterized in that, each unit also comprises:
One power electrode metal level is used for described first power supply signal of conducting;
First shows anode, is arranged on the described transistor;
Second shows anode, is arranged on the described power electrode metal level; And
One cathodic metal layer is arranged at described first and shows that anode, described second shows on anode, described Organic Light Emitting Diode and the described infrared light emission layer, is used for conducting second source signal;
Wherein said Organic Light Emitting Diode is arranged at described first and shows between anode and the described cathodic metal layer, and described infrared light emission layer is arranged at described second and shows between anode and the described cathodic metal layer.
16. image unit as claimed in claim 11 is characterized in that, described Organic Light Emitting Diode is used for sending red, green, blue coloured light line.
17. image unit as claimed in claim 13 is characterized in that, described infrared ray photographic layer is that a Silicon-rich photo-sensitive cell or a PN connect a face photo-sensitive cell or an amorphous silicon film transistor photo-sensitive cell.
18. image unit as claimed in claim 11, it is characterized in that, the input end of described the first transistor is to be coupled to described source electrode driver, the control end of described the first transistor is coupled to described gate drivers, the output terminal of described the first transistor couples the control end of described transistor seconds, the input end of described transistor seconds is coupled to described first power supply signal, and the output terminal of described transistor seconds is coupled to described Organic Light Emitting Diode.
19. image unit as claimed in claim 11 is characterized in that, the two ends of described storage capacitors are respectively coupled to the control end of described Organic Light Emitting Diode and described transistor seconds.
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| CNA200910161023XA CN101609647A (en) | 2009-07-30 | 2009-07-30 | Touch control organic light-emitting diode display device and image unit |
| CN2010102336610A CN101887691B (en) | 2009-07-30 | 2010-07-19 | Organic light emitting diode display device |
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| CNA200910161023XA CN101609647A (en) | 2009-07-30 | 2009-07-30 | Touch control organic light-emitting diode display device and image unit |
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| CN100562840C (en) * | 2008-05-22 | 2009-11-25 | 友达光电股份有限公司 | Contact panel |
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| CN101887691A (en) | 2010-11-17 |
| CN101887691B (en) | 2012-08-29 |
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