JP2002287900A - Information device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve problems such as visibility of pictures, durability of a device, accuracy and miniaturization, and electric power consumption for a conventional information device having a resistance film type or optical pen input function. SOLUTION: In this information device having a pen input function, information is input by arranging both EL elements and photoelectric conversion elements on image elements of a displaying device and inputting light into the photoelectric conversion elements by a pen than reflects light at the pen point. Thereby the information device that does not damage brightness of the displayed pictures, displays a clear picture, being excellent in durability and miniaturizable, with good accuracy and the pen input function can be provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an information device having a function of inputting information with a pen or the like. In particular, the present invention relates to an information device for performing a pen input operation on a screen of a display device. The display device particularly relates to an EL display device using an EL element. Further, the present invention relates to an electronic device such as a portable information device having the information device.

[0002] In this specification, an EL element is
An example using both light emission from singlet excitons (fluorescence) and light emission from triplet excitons (phosphorescence) is shown.

[0003]

2. Description of the Related Art In portable information devices, there is a growing demand for pen-input type portable information devices in terms of miniaturization and operability. The pen input method is a method of inputting information by using a dedicated or arbitrary pen or the like and bringing a pen tip into contact with or close to a display screen.

That is, information corresponding to the position pointed by the pen tip on the display screen is input. The display screen also serves as a pen input screen. In this pen input method, it is necessary to specify the position pointed by the pen on the pen input screen. Examples of the pen input method include a resistive film method and an optical method.

[0005] First, the resistive film type will be described.

FIG. 7 is a sectional view showing the structure of a resistive-type pen input device. Note that the pen input device 7711 is formed on the display device 7708 so as to overlap with the display device 7708.
The display device 7708 includes a display portion 7709 and a peripheral circuit 771.
Has zero.

In the pen input device 7711, a movable electrode 7701 and a fixed electrode 7702 are connected to a dot spacer 770.
4 and about 100 to 100 depending on the bonding material 7703
They are connected in parallel at an interval of 300 μm. Here, the display device 7708 is input via the pen input device 7711.
The movable electrode 7701 and the fixed electrode 7702 are arranged such that an image projected on the display portion 7709 of the
It is formed of a light-transmitting conductive material. As the light-transmitting conductive material, an indium tin oxide (ITO) film is generally used.

In the resistance film type, the movable electrode 7701 and the fixed electrode 7702 are in contact with each other at a position (input point A in FIG. 7) indicated by the input pen 7705 on the pen input device 7711. At this time, the position of the input point A is determined by the resistances R1 and R2 from the two position detection electrodes 7706 and 7707.
Is a method of reading as a ratio of

More specifically, FIG. 8 shows an example of reading a position. At the input point A, pressure is applied from the movable electrode 801 side by the input pen 807 to
Contact with 2. Here, a voltage is applied between the two electrodes 803 and 804 of the movable electrode 801 to generate a potential gradient inside the movable electrode 801. The potential V of the input point A at this time
By measuring the _A, it is possible to know the resistance value R _x1 and R _x2 from the electrode 803 and the electrode 804 to the input point A. Here, assuming that the film quality of the movable electrode 801 is uniform, the resistance values R _x1 and R _x2 are proportional to the distance from each of the electrodes 803 and 804 to the input point A.

Similarly, a voltage is applied between the two electrodes 805 and 806 of the fixed electrode 802 to generate a potential gradient inside the fixed electrode 802. Knowing the potential V _A of the input point A at this time, it is possible to know the resistance value R _y1 and R _y2 from the electrode 805 and the electrode 806 to the input point A. Here, assuming that the film quality of the fixed electrode 802 is uniform, the resistance values R _y1 and R _y2 are proportional to the distance from each of the electrodes 805 and 806 to the point A. Thus, the position of the input point A can be known.

Note that, for measuring the position of the input point A,
The method of measuring the potential of the input point A is not limited to the above configuration, and various methods can be used.

Next, an optical pen input device will be described. FIG. 9A is a schematic top view of a pen input device of this type.

When the pen tip of the input pen 901 touches the input unit 902, the touched position is detected. The operation of this position detection will be described.

Around the input section 902, on the right side, x-
One light emitting diode (hereinafter, referred to as LED) 2 ₁ to 2 _x
There are disposed, on the left side portion, x-1 single phototransistor (hereinafter, referred to as PT) 3 ₁ ~3 _x is positioned so as to face the LED2 ₁ to 2 _x, is embedded in the frame 4.

[0015] On the other hand, on the lower side, y-1 pieces of LED5 ₁ ~
5 _y is disposed on the upper side, y-1 single PT6 ₁ to 6
_y is arranged so as to face the LED 5 ₁ to 5 _y, the frame 4
Buried in

[0016] and, LED2 ₁ ~2 _x and PT3 ₁ ~3
_x forms the x-1 present in the horizontal direction of the touch input line, LED 5 ₁ to 5 _y and PT6 ₁ to 6 _y forms a y-1 present in the vertical direction of the touch input line.

Here, the touch input line is a path through which light emitted from the LED passes when the light emitted from the LED is input to the PT in the pair of the LED and the PT facing each other.

Incidentally, as 3 _{1 to} 3 _x and 6 _{1 to} 6 _y , PT
Used to convert light into electrical signals, not limited to PT,
Any photoelectric conversion element can be used freely.

[0019] emitted from the LED2 ₁ to 2 _x and 5 ₁ to 5 _y respectively, to enhance the directivity of light incident respectively PT3 ₁ to 3 _x and 6 ₁ to 6 _y, frame each element is embedded 4
Are formed in the front of each of them.

FIG. 9B is a sectional view taken along a line a-a 'of FIG. 9A. A display device 910 is formed below the pen input device. The display device 910 includes a display portion 911 and a peripheral circuit 912. Unlike a resistive film type, an image displayed on the display portion 911 can be directly viewed.

Referring again to FIG.

In the pen input device having the above structure, the horizontal light touch input line and the vertical touch input line are simultaneously emitted and received from the pair of the opposing LED and PT in order from the end (hereinafter, referred to as the pair). , Scan).

Here, an input pen 901 indicates a point in the input section 902. Now, it is assumed that the input point A in FIG. At this time, the light is blocked between the two touch input lines 2 _{n to} 3 _n and 5 _{m to} 6 _m corresponding to the input point A, and the position A touched by the input pen 901 is recognized.

[0024]

In the resistive film type, it is necessary to mechanically deform the movable electrode every time information is input. Therefore, the movable electrode may be fatigued and broken due to repeated deformation. This poses a problem in durability.

[0025] Even if it does not lead to destruction, even if a minute crack of a micrometer order is formed in the process of repeated deformation or fabrication, the IT
Since the conductivity of the O film is not uniform, a problem occurs in the accuracy of detecting the position of the pen input.

In addition, an image on the display device is read through two electrodes, a movable electrode and a fixed electrode.
At this time, since the transmittance of the transparent electrode is not 100%,
There is a problem of screen visibility such that light from the display device is attenuated and the brightness of the image is reduced. Therefore, it is necessary to increase the light emission of the display device in order to increase the luminance of the image, and there is a problem of an increase in power consumption of the device.

Further, when a stress is applied from the outside and the distance between the movable electrode and the fixed electrode is reduced to 40 μm or less, a Newton ring appears due to the effect of interference of reflected light between the two electrodes. There is also.

In addition, since the capacitor structure has two electrodes arranged in parallel, there is a problem that the battery is consumed when the battery power is used. This is a serious problem in portable information devices where low power consumption is desired.

On the other hand, the optical pen input device does not need to repeatedly deform the thin film unlike the resistive film type, and there is no problem of mechanical durability. Further, the display device is not seen through the transparent electrode, and there is little problem in viewability of the screen.

However, when the light emitted from the light emitting element is not received straight by the light receiving element which is the pair, for example,
Even if a position such as an input pen is pointed out, there is a possibility that the position is not recognized.

Further, since it is necessary to form a row of light emitting elements and light receiving elements, slits and the like on the display device, there is a problem that miniaturization is difficult.

[0032]

Therefore, in an information device having a pen input function according to the present invention, pixels of a display device are provided with EL.
(Electroluminescence) Both an element and a photoelectric conversion element are arranged, and information is input by a pen that reflects light at a pen tip.

The EL element is a self-luminous element,
Used for L display devices. An EL display device is an organic EL display device (OELD: Organic EL Display) or an organic light emitting diode (OLED: Organic LED).
c Light Emitting Diode).

The EL element has a structure in which an EL layer is sandwiched between a pair of electrodes (anode and cathode). The EL layer usually has a laminated structure. A typical example is a layered structure of “hole transport layer / light emitting layer / electron transport layer” proposed by Tang et al. Of Kodak Eastman Company.
This structure is known to have extremely high luminous efficiency.

In addition, a laminate of “hole injection layer / hole transport layer / light emitting layer / electron transport layer” on the electrode,
It may have a structure laminated with “hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer”. Further, the light emitting layer may be doped with a fluorescent dye or the like.

In this specification, all layers provided between a pair of electrodes are referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, and the like are all included in the EL layer. A predetermined voltage is applied to the EL layer having the above structure from a pair of electrodes. Thereby,
Carrier recombination occurs in the light emitting layer to emit light.

It should be noted that the EL layer is not limited to a layer structure in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like are clearly distinguished. That is,
The EL layer may have a structure in which a material for forming a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, or the like is mixed.

For example, a mixed layer composed of a material constituting an electron transport layer (hereinafter, referred to as an electron transport material) and a material constituting a light emitting layer (hereinafter, referred to as a light emitting material) is formed by electron transport. E having a structure between the layer and the light emitting layer
It may be an L layer.

The EL layer may be made of any of a low molecular material, a high molecular material, and a medium molecular material.

In the present specification, the term “medium molecular material” refers to a non-sublimable material having a chain length of 10 μm.
The following is assumed.

As the photoelectric conversion element, a photodiode or the like can be used. In this specification, a photodiode has a cathode electrode, an anode electrode, and a photoelectric conversion layer between the cathode electrode and the anode electrode.

It is to be noted that the photodiode is not limited to this configuration, and an i-type (intrinsic) is provided between the p-type semiconductor layer and the n-type semiconductor layer.
It may have a PIN structure having a photoelectric conversion layer made of a semiconductor layer. Further, a PN photodiode composed of a p-type semiconductor layer and an n-type semiconductor layer may be used.

As the photoelectric conversion element, an element having a photoelectric conversion layer or the like made of an organic substance may be used.

When a photodiode is irradiated with light after applying a reverse bias voltage between a cathode electrode and an anode electrode (hereinafter, referred to as between the electrodes of the photodiode), carriers generated by the light cause the photodiode to emit light. Voltage drops. At this time, the higher the intensity of the irradiated light, the greater the amount by which this voltage decreases. Using this,
The light is detected as an electric signal by comparing the voltage when the photodiode is irradiated with light with the voltage when the photodiode is not irradiated.

The EL element and the photodiode are formed in a matrix on the same substrate, and each operation of the EL element and the photodiode is controlled by using a thin film transistor (TFT) similarly provided in the matrix.

As a result, there can be obtained an information device which displays a clear image without deteriorating the brightness of the display image, has excellent durability, can be miniaturized, has high accuracy, and has a low power consumption pen input function. .

Hereinafter, the configuration of the information device of the present invention will be described.

According to the present invention, in an information device having a plurality of pixels, an input pen is provided, each of the plurality of pixels has an EL element and a photoelectric conversion element, and light emitted by the EL element is An information device is provided, wherein information is input by inputting light reflected by an input pen and reflected by the input pen to the photoelectric conversion element.

[0049] The information device may be characterized in that the EL element and the photoelectric conversion element are formed on the same substrate.

[0050] The information device may be characterized in that the photoelectric conversion element is a photodiode.

According to the present invention, in an information device having a plurality of pixels, a source signal line driving circuit for EL display,
An L display gate signal line driving circuit, a plurality of EL display source signal lines, a plurality of EL display gate signal lines, a plurality of power supply lines, and an input pen; The line drive circuit outputs a signal to the plurality of EL display source signal lines, the EL display gate signal line drive circuit outputs a signal to the plurality of EL display gate signal lines, and outputs the plurality of pixels. Has an EL display unit and a sensor unit, the EL display unit and the sensor unit are formed on the same substrate, and the EL display unit has a switching TF.
T, an EL driving TFT, and an EL element. A gate electrode of the switching TFT is connected to one of the plurality of EL display gate signal lines, and a source region of the switching TFT. One of the plurality of EL display source signal lines is connected to one of the plurality of EL display source signal lines, and the other is connected to a gate electrode of the EL drive TFT. One of the region and the drain region is connected to one of the plurality of power supply lines, the other is connected to the EL element, the sensor unit has a photodiode, and the EL element Is reflected by the input pen,
An information device is provided, in which light reflected by the input pen is input to the photodiode to input information.

According to the present invention, in an information device having a plurality of pixels, a sensor source signal line driving circuit, a sensor gate signal driving circuit, a plurality of sensor output wirings, and a plurality of sensor gate signal lines are provided. , A plurality of reset gate signal lines, a plurality of sensor power lines, and an input pen, the sensor source signal line drive circuit reads a signal from the plurality of sensor output wirings, A gate signal line driving circuit that outputs signals to the plurality of sensor gate signal lines and a plurality of reset gate signal lines; the plurality of pixels each include an EL display unit and a sensor unit; The display unit and the sensor unit are formed on the same substrate, and the sensor unit includes a selection TFT, a buffer TFT, a reset TFT, and a photodiode, The gate electrode of the 択用 TFT is connected to one of said plurality of sensor gate signal line,
One of the source region and the drain region of the selection TFT is connected to one of the plurality of sensor output wirings, and the other is either the source region or the drain region of the buffer TFT. The other side of the source and drain regions of the buffer TFT that is not connected to the selection TFT is connected to one of the plurality of sensor power supply lines, The gate electrode is connected to the photodiode and the source region or the drain region of the reset TFT, and the side of the source or drain region of the reset TFT that is not connected to the buffer TFT is connected to the plurality of sensors. Connected to one of the reset power supply lines, and the gate electrode of the reset TFT is connected to the plurality of reset gates. Is connected to one of the bets signal line,
The EL display unit has an EL element, and light emitted from the EL element is reflected by the input pen, and light reflected by the input pen is input to the photodiode to input information. There is provided an information apparatus characterized in that the information processing is performed.

According to the present invention, in an information device having a plurality of pixels, a source signal line driving circuit for EL display,
An L display gate signal line driving circuit, a sensor source signal line driving circuit, a sensor gate signal driving circuit, a plurality of EL display source signal lines, a plurality of EL display gate signal lines, A power supply line, a plurality of sensor output lines, a plurality of sensor gate signal lines, a plurality of reset gate signal lines, a plurality of sensor power lines, and an input pen; The source signal line driving circuit outputs a signal to the plurality of EL display source signal lines,
The L display gate signal line driving circuit outputs a signal to the plurality of EL display gate signal lines, and the sensor source signal line driving circuit reads a signal from the plurality of sensor output wirings, A gate signal line driving circuit that outputs signals to the plurality of sensor gate signal lines and a plurality of reset gate signal lines; the plurality of pixels include an EL display unit and a sensor unit; The unit and the sensor unit are formed on the same substrate, the EL display unit includes a switching TFT, an EL driving TFT, and an EL element, and a gate electrode of the switching TFT is
One of the source region and the drain region of the switching TFT is connected to one of the plurality of EL display gate signal lines, and one of the source and drain regions is connected to one of the plurality of EL display source signal lines. The other is connected to the gate electrode of the EL driving TFT, and the EL driving TF
One of the source region and the drain region of T is connected to one of the plurality of power supply lines, the other is connected to the EL element, and the sensor unit is a selection TFT.
A buffer TFT, a reset TFT, and a photodiode, wherein a gate electrode of the selection TFT is connected to one of the plurality of sensor gate signal lines, and a source region of the selection TFT is provided. And a drain region, one of which is connected to one of the plurality of sensor output wirings, and the other is connected to either the source region or the drain region of the buffer TFT, and Of the source region and the drain region of the TFT, the side not connected to the selection TFT is connected to one of the plurality of sensor power lines, and the gate electrode of the buffer TFT is connected to the photodiode. And a source region or a drain region of the reset TFT, and a source region or a drain region of the reset TFT. The side not connected to the buffer TFT is connected to one of the plurality of sensor power lines, and the gate electrode of the reset TFT is connected to one of the plurality of reset gate signal lines. And the light emitted from the EL element is reflected by the input pen, and the light reflected by the input pen is
An information device is provided in which information is input by being input to the photodiode.

The EL display source signal line drive circuit and E
The L display gate signal line driving circuit may be an information device characterized by being formed on the same substrate as the substrate on which the EL display portion and the sensor portion are formed. The information device, wherein the sensor source signal line drive circuit and the sensor gate signal line drive circuit are formed on the same substrate as the substrate on which the EL display portion and the sensor portion are formed. You may.

The EL display source signal line drive circuit;
The EL display gate signal line drive circuit, the sensor source signal line drive circuit, and the sensor gate signal line drive circuit are formed on the same substrate as the substrate on which the EL display portion and the sensor portion are formed. The information device may be characterized in that

[0056] The information device may be characterized in that the photodiode has an anode electrode, a cathode electrode, and a photoelectric conversion layer sandwiched between the anode electrode and the cathode electrode.

The information device may be characterized in that the photoelectric conversion layer is made of an organic material.

[0058] The information device, wherein the photodiode has a p-type semiconductor layer, an n-type semiconductor layer, and a photoelectric conversion layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. It may be.

The information device may be characterized in that the photoelectric conversion layer is made of an amorphous semiconductor.

The light emitted from the EL element is applied to the surface of the object, the light applied to the surface of the object is reflected by the surface of the object, and the light reflected by the surface of the object is applied to the object. The information device may be characterized in that information on the surface of the subject is input as an image by being input to the photoelectric conversion element.

[0061] The information on the surface of the subject may be biological information.

[0062] The biometric information may be an information device characterized by a palm print.

[0063] The biometric information may be an information device characterized in that it is a fingerprint.

[0064] The information device may be a portable information terminal or a PDA.

[0065]

Embodiments of the present invention will be described.

FIG. 1 is a schematic diagram of an information device having a pen input function according to the present invention.

In this embodiment, a method of inputting information by showing the inside of the display unit and the input unit using an input pen that reflects light at the pen tip will be described. Here, in the display / input unit, each pixel includes an EL display unit having an EL element and a sensor unit having a photoelectric conversion element. These EL display unit and sensor unit
Driven by signals from the EL display source signal line drive circuit, the EL display gate signal line drive circuit, the sensor source signal line drive circuit, and the sensor gate signal line drive circuit disposed around the display / input section Is done.

Here, the respective drive circuits (EL display source signal line drive circuit, EL drive gate signal line drive circuit, sensor source signal line drive Circuit and a sensor gate signal line driving circuit).

A signal from the EL display source signal line driving circuit is supplied to the EL display source signal line S through the EL display of each pixel.
A signal transmitted from the EL display gate signal line driving circuit to the display unit is transmitted to the EL display unit of each pixel by the EL display gate signal line G.

The sensor source signal line driving circuit for sensor reads the signal of the sensor section of each pixel through the sensor output wiring SS, and the sensor gate signal line driving circuit reads the signal of the sensor section of each pixel through the sensor gate signal line SG. Transmit signals.

In FIG. 1, a power supply line (power supply line) for EL elements, a power supply line for sensors, a signal line for resetting (gate signal line for resetting), and the like are shown. Absent.

Each pixel in the display / input section performs display in the EL display section. At the same time, the light emitted from the EL display unit is reflected at the pen tip of the input pen, and the light is input to the sensor unit (light input area) near the pen point. Thus, the position pointed by the input pen is recognized.

Next, a specific circuit configuration of the display / input unit will be described.

FIG. 2 is a diagram showing an example of the circuit configuration of the display / input unit.

The display / input section 2201 includes source signal lines S1 to Sx for EL display and gate signal line G1 for EL display.
Gy, power supply lines V1 to Vx, sensor output lines SS1 to SSx, and sensor gate signal lines SG1 to SG.
y, reset gate signal lines RG1 to RGy, and a sensor power supply line VB.

The display / input unit 2201 includes a plurality of pixels 2
202. Each of the plurality of pixels 2202 is
One of the EL display source signal lines S1 to Sx and E
One of the L display gate signal lines G1 to Gy, one of the power supply lines V1 to Vx, and the sensor output wiring S
One of S1 to SSx and a sensor gate signal line S
One of G1 to SGy, one of reset gate signal lines RG1 to RGy, and a sensor power supply line VB.

The sensor output wirings SS1 to SSx are connected to constant current sources 2203-1 to 2203-x, respectively.

FIG. 3 shows a detailed configuration of the pixel 2202 in FIG. The EL display source signal line S indicates one of the EL display source signal lines S1 to Sx.
The EL display gate signal line G indicates one of the EL drive gate signal lines G1 to Gy. The power supply line V indicates one of the power supply lines V1 to Vx. The sensor output wiring SS indicates any one of the sensor output wirings SS1 to SSx. The sensor gate signal line SG indicates one of the sensor gate signal lines SG1 to SGy.

The pixels include the EL display section 3311 and the sensor section 3
312.

The EL display section 3311 includes an EL element 330
1. Switching TFT 3302, EL driving TFT
3303 and a capacitor 3304. Note that the capacitor 3304 is a TFT 3 for EL driving.
If the parasitic capacitance of the gate electrode 303 is actively used,
It is not necessarily required.

The gate electrode of the switching TFT 3302 is connected to an EL display gate signal line G, one of a source region and a drain region is connected to an EL display source signal line S, and the other is connected to a capacitor 3304. One electrode and a gate electrode of the EL driving TFT 3303 are connected. The other electrode of the capacitor 3304 is connected to the power supply line V. EL drive TFT
One of the source region and the drain region 3303 is connected to the power supply line V, and the other is connected to the EL element 3301.

The side of the anode and cathode of the EL element 3301 connected to the source or drain region of the EL driving TFT 3303 becomes a pixel electrode, and the EL driving TF
The side of T3303 that is not connected to the source region or the drain region is a counter electrode.

The sensor unit 3312 includes the photodiode 3
305, selection TFT 3306, buffer TFT 33
07, a reset TFT 3308.

In this embodiment, a photodiode 3305 having a Schottky type in which a photoelectric conversion layer is interposed between an anode electrode and a cathode electrode is used.

Light incident on the photodiode is absorbed by the photoelectric conversion layer to form carriers. The amount of carriers formed by this light depends on the amount of light absorbed by the photoelectric conversion layer.

Here, the photodiode having the above structure is used as a photoelectric conversion element for converting light into an electric signal.
However, the present invention is not limited to this, and a PIN-type or PN-type photodiode, an avalanche diode, or the like can be used.

Note that the PIN type photodiode has p
A semiconductor layer, an n-type semiconductor layer, and an i-type (intrinsic) semiconductor layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. Here, the i-type semiconductor layer is also called a photoelectric conversion layer.

Further, by using an amorphous semiconductor such as an amorphous silicon film (amorphous silicon film) as a photoelectric conversion layer included in these photodiodes, light absorption in the photoelectric conversion layer can be increased. it can.

As the photoelectric conversion element, an element having a photoelectric conversion layer or the like made of an organic substance may be used.

The gate electrode of the selection TFT 3306 is connected to the sensor gate signal line SG, one of the source region and the drain region is connected to the sensor output line SS, and the other is the source region of the buffer TFT 3307. Alternatively, it is connected to the drain region. The side of the source and drain regions of the buffer TFT 3307 that is not connected to the selection TFT 3306 is connected to the sensor power supply line VB. The gate electrode of the reset TFT 3308 is connected to the reset gate signal line RG,
One of the source region and the drain region is connected to the sensor power supply line VB, and the other is a buffer TFT 330.
7 and a photodiode 3305.

The sensor power supply line VB is maintained at a constant potential (reference potential). The sensor output wiring SS is connected to a constant current source.

Note that an EL display source signal line driving circuit,
The source signal line driver circuit for the sensor, the gate signal line driver circuit for the EL display, and the gate signal line driver circuit for the sensor may be circuits having known structures.

The operation method of the display / pixel unit having the above configuration will be described with reference to the circuit diagrams of FIGS. 2 and 3 and the timing charts of FIGS. 17 and 18.

First, an operation method of the EL display unit will be described with reference to FIGS. 2 and 3 and FIG.

Here, the source signal lines S1 to Sx
(Hereinafter, referred to as an analog system) will be described.

Here, the switching TFT 3302 and the EL driving TFT 3303 are assumed to be n-channel TFTs.
The driving TFT 3303 is an n-channel TFT
However, a p-channel TFT may be used. However,
Since it is desirable that the source operates at a fixed potential,
When the anode of the EL element 3301 serves as a pixel electrode, the EL driving TFT 3303 is desirably a p-channel TFT. Conversely, when the cathode of the EL element 3301 serves as a pixel electrode, the EL driving TFT 3303 is provided. , An n-channel TFT.

First, in response to a signal input to the EL display gate signal line G1, all the switching TFTs 3302 connected to the EL display gate signal line G1 are turned on.

A period in which one EL display gate signal line is selected is called one line period. In particular, a period in which the EL display gate signal line G1 is selected is referred to as a first line period L1. Call. During this line period L1, EL
Analog signals are sequentially input to the display source signal lines S1 to Sx. The analog signal voltage input to the EL display source signal line is supplied to the capacitor 3304 and the EL driving TF.
This is applied to the gate electrode of T3303. EL drive TF
T3303 causes a source-drain current corresponding to the analog signal voltage applied to the gate electrode to flow from the power supply line V to the EL element 3301. The EL element 3301 emits light at a luminance according to the current.

Next, the EL display gate signal line G2 is selected, and all the switching TFTs 3302 connected to the EL display gate signal line G2 are turned on. Thus, the second line period L2 starts. Thereafter, signal voltages are sequentially input to the EL display source signal lines S1 to Sx. This signal voltage is applied to the gate electrode of the EL driving TFT 3303, and the source-drain current corresponding to the analog signal voltage applied to the gate electrode is expressed as
The power is supplied to the EL element 3301 from the power supply line V. The EL element 3301 emits light at a luminance according to the current.

The above operation is repeated for all EL display gate signal lines G1 to Gy for one frame period F1.
Ends. After that, the second frame period F2 starts. An image is displayed by repeating this operation.

Next, the operation method of the sensor unit will be described with reference to FIG.
And FIG. 3 and FIG.

Although the reset TFT 3308 is an n-channel TFT, the buffer TFT 3307 is a p-channel TFT, and the selection TFT 3306 is an n-channel TFT, the reset TFT 3308, the buffer TFT 3307, and the selection TFT 3306 are Each of them may be either an n-channel TFT or a p-channel TFT. Note that the polarity of the reset TFT 3308 and the polarity of the buffer TFT 3307 are desirably opposite.

First, all the reset TFTs 3308 connected to the reset gate signal line RG1 are turned on by the signal of the reset gate signal line RG1.
At this time, it is assumed that the reset gate signal line RG1 is selected. Note that all the reset TFTs 3308 connected to the other reset gate signal lines RG2 to RGy are all non-conductive. At this time, in the first pixel row, the potential of the sensor power supply line VB is set via the reset TFT 3308 through the buffer T
Applied to the gate electrode of FT3307. Thus, a reverse bias voltage is applied between the electrodes of the photodiode 3305. At this time, the source region of the buffer TFT 3307 is at the potential (reference potential) of the sensor power supply line VB.
Is maintained at a potential obtained by subtracting the potential difference between the source region and the gate region of the buffer TFT 3307.

At this time, all the selection TFTs 3306 connected to the sensor gate signal line SG1 are non-conductive by the signal of the sensor gate signal line SG1.

In this specification, a period during which the reset gate signal line is selected is referred to as a reset period RS.

Next, the signal of the reset gate signal line RG1 changes, and all the reset TFTs 3308 connected to the reset gate signal line RG1 are turned off. At this time, the reset gate signal line is not selected. Then, the photodiode 3305
Is irradiated with light, a current flows between the electrodes of the photodiode 3305, and the reverse bias voltage applied between the electrodes of the photodiode 3305 during the reset period decreases. Thereafter, all the selection TFTs 3306 connected to the sensor gate signal line SG1 are turned on by a signal input to the sensor gate signal line SG1.

The period from when the reset gate signal line is not selected to when the selection TFT corresponding to the pixel on the same line is selected is called a sampling period ST. In particular, a period from when the reset gate signal line RG1 is deselected to when the selection gate signal line SG1 is selected is referred to as a first sampling period ST1.

In the sampling period ST1, the reverse bias voltage between the electrodes of the photodiode 3305 decreases with time. The degree to which the reverse bias voltage decreases depends on the intensity of light applied to the photoelectric conversion layer of the photodiode 3305. Here, the electrode of the photodiode 3305 on the side not connected to the gate electrode of the buffer TFT 3307 is kept at a constant potential. Therefore, the buffer T of the photodiode 3305
The potential of the side of the FT 3307 connected to the gate electrode decreases.

This decrease in potential is caused by the buffer TFT 33
07, the potential of the gate electrode is lowered.

Here, the buffer TFT 330 of each pixel
7 are connected to the constant current sources 2203-1 to 2203-1 through the drain and source of the selection TFT 3306, respectively.
203-x, the buffer TFT 3
307 acts as a source follower. Therefore, the gate-source voltage of the buffer TFT 3307 is always kept equal. Therefore, the photodiode 3305
Of the buffer TFT 33
When the potential of the gate electrode 07 changes, the potential of the source region of the buffer TFT 3307 also changes by the same potential. After the sampling period ST1, the sensor gate signal line SG1 is selected, and the change in the potential of the source region of the buffer TFT 3307 is determined by the sensor output lines SS1 to SS1.
Output to SSx.

Thereafter, the sensor gate signal line SG1 is
It will be unselected.

On the other hand, when the reset gate signal line RG1 is in a non-selected state, the reset gate signal line RG2 is selected. All the reset TFTs 3308 connected to the reset gate signal line RG2 become conductive,
The reset period RS of the second line starts. Thereafter, the reset gate signal line RG2 is in a non-selected state, and the sampling period ST2 of the second line starts. In addition,
The first sampling period ST1 and the second sampling period ST2 have different start times but the same length.

Similarly, in the second sampling period ST2, the reverse bias voltage between the electrodes of the photodiodes decreases in the sensor section of each pixel according to the intensity of the input light. After the second sampling period ST2, all the selection TFTs 3306 connected to the sensor gate signal line SG2 are output by the signal of the sensor gate signal line SG2.
Becomes conductive, the change in the potential between the electrodes of the photodiode 3305 input to the gate electrode of the buffer TFT 3307 becomes a change in the potential of the source region of the buffer TFT 3307, and the sensor output wirings SS1 to SS
Output to Sx.

Thereafter, the sensor gate signal line SG2 is in a non-selected state.

The above operation is repeated for all the sensor gate signal lines SG1 to SGy, and the display and input
The intensity of the light input to each of the sensor units 3312 of all the pixels 01 is read as a corresponding voltage signal.

As described above, the EL display unit displays an image, and at the same time, the sensor unit detects light reflected at the pen tip of the input pen. Thus, the coordinates of the pixel at which the light reflected at the pen tip of the input pen is input can be specified. Thereby, the position pointed by the input pen can be specified.

[0117]

Embodiments of the present invention will be described below.

[Example 1] In this example, an example in which the information device of the present invention described in the embodiment mode is manufactured is described with reference to a cross-sectional view of FIG. Note that the structure of the pixel is the same as that shown in FIG. 3 in the embodiment.

Reference numeral 401 denotes a switching TFT; 402, an EL driving TFT; 403, a reset TFT;
Is a buffer TFT, and 405 is a selection TFT.

Reference numeral 406 denotes an anode electrode, 407 denotes a photoelectric conversion layer, and 408 denotes a cathode electrode. A photodiode 421 is formed by the anode electrode 406, the photoelectric conversion layer 407, and the cathode electrode 408. Reference numeral 414 denotes a sensor wiring, which electrically connects the cathode electrode 408 to an external power supply. In addition, the photodiode 4
21 and the drain region of the reset TFT 403 are electrically connected.

Here, the anode electrode 406 of the photodiode 421 is formed of a light-transmitting material.

Reference numeral 409 is a pixel electrode (anode), 410 is an EL layer, and 411 is a counter electrode (cathode). Pixel electrode (anode) 409, EL layer 410, counter electrode (cathode)
411 form the EL element 422. A bank 412 separates the EL layers 410 between adjacent pixels.

Here, the pixel electrode 409 of the EL element 422
Is formed of a light-transmitting material.

In FIG. 4, the EL element 422 is
Light is irradiated on the 30 side. Therefore, the TF of the substrate 430
The reflecting plate 423 at the pen tip of the input pen 424 is approached from the side where T or the like is not formed. Then, part of the light emitted from the EL element 422 of the pixel is reflected by the reflecting plate 423 at the pen tip of the input pen 424, and the input pen 424
4 of the sensor part of the pixel near the contact of
21 is input to the photoelectric conversion layer 407. Thus, the position pointed by the pen tip of the input pen 424 can be specified.

In this embodiment, the switching TFT
401, reset TFT 403, selection TFT 405
Are all n-channel TFTs. EL drive TF
T402, buffer TFT 404 is a p-channel type TF
T. Note that the present invention is not limited to this configuration. Therefore, the switching TFT 401 and the EL driving TFT 4
02, buffer TFT 404, selection TFT 405,
The reset TFT 403 may be either an n-channel TFT or a p-channel TFT.

However, as in this embodiment, the EL driving TF
The source or drain region of T402 is an EL element 4
22 when electrically connected to the anode 409 of the
The driving TFT 402 is preferably a p-channel TFT. Conversely, when the source region or the drain region of the EL driving TFT 402 is electrically connected to the cathode of the EL element 422, the EL driving TFT 402 has n
It is desirable to use a channel type TFT.

As in the present embodiment, the anode 406 of the photodiode 421 is connected to the reset TFT 40.
3 is electrically connected to the reset TFT 4
It is preferable that 03 is an n-channel TFT and the buffer TFT 404 is a p-channel TFT. Conversely, the cathode electrode of the photodiode 421 is the reset TFT 4
03 and the sensor wiring 414 is connected to the anode electrode, it is preferable that the reset TFT 403 is a p-channel TFT and the buffer TFT 404 is an n-channel TFT.

[Embodiment 2] In this embodiment, an example in which the direction of light emission of the EL element is different in the information device having the structure described in Embodiment 1 will be described with reference to FIG. Note that the structure of the pixel is the same as that shown in FIG. 3 in the embodiment.

501 is a switching TFT, 502 is an EL driving TFT, 503 is a reset TFT, 504
Denotes a buffer TFT, and 505 denotes a selection TFT.

Reference numeral 506 denotes a cathode electrode, 507 denotes a photoelectric conversion layer, and 508 denotes an anode electrode. The photodiode 521 is formed by the cathode electrode 506, the photoelectric conversion layer 507, and the anode electrode 508. Reference numeral 514 denotes a sensor wiring, which electrically connects the anode electrode 508 to an external power supply. In addition, the photodiode 5
The cathode electrode 506 and the drain region of the reset TFT 503 are electrically connected.

Here, the anode electrode 508 of the photodiode 521 is formed of a light-transmitting material.

Reference numeral 509 denotes a pixel electrode (cathode), 510 denotes an EL layer, and 512 denotes a counter electrode (anode). Pixel electrode (cathode) 509, EL layer 510, counter electrode (anode)
With 512, the EL element 522 is formed. A bank 513 separates the EL layers 510 between adjacent pixels.

Here, the counter electrode 512 of the EL element 522
Is formed of a light-transmitting material.

In the information device having the configuration shown in FIG.
L element 522 emits light in a direction opposite to that of substrate 530.

A reflecting plate 523 for reflecting light is attached to the pen tip of the input pen 524.

In FIG. 5, the EL element 522 is
Light is emitted in the direction opposite to the 30 side. Therefore, from the side of the substrate 530 where the TFT and the like are formed, the input pen 5
The reflecting plate 523 of the 24 nib is brought closer. Then, part of the light emitted from the EL element 522 of the pixel is reflected by the reflecting plate 523 at the pen tip of the input pen 524, and the photoelectric conversion of the photodiode 521 of the sensor unit of the pixel near the input pen 524 is pointed out. Input to layer 507. Thus, the position indicated by the pen tip of the input pen 524 can be specified.

In this embodiment, the switching TFT
501, EL driving TFT 502, buffer TFT 5
04, the selection TFTs 505 are all n-channel TFTs. The reset TFT 503 is a p-channel type TF
T. Note that the present invention is not limited to this configuration. Therefore, the switching TFT 501 and the EL driving TFT 50
2. The buffer TFT 504, the selection TFT 505, and the reset TFT 503 may be either an n-channel TFT or a p-channel TFT.

However, as in this embodiment, the EL driving TF
The source or drain region of T502 is an EL element 5
22 when electrically connected to the cathode 509 of
The driving TFT 502 is preferably an n-channel TFT. Conversely, when the source region or the drain region of the EL driving TFT 502 is electrically connected to the anode of the EL element 522, the EL driving TFT 502
It is desirable to use a channel type TFT.

As in this embodiment, the cathode 506 of the photodiode 521 is connected to the reset TFT 50.
3 is electrically connected to the reset TFT 5
03 is preferably a p-channel TFT, and the buffer TFT 504 is preferably an n-channel TFT. Conversely, the anode electrode of the photodiode 521 is connected to the reset TFT 5
03 and the sensor wiring 514 is connected to the cathode electrode, the reset TFT 503 is preferably an n-channel TFT and the buffer TFT 504 is preferably a p-channel TFT.

[Embodiment 3] In this embodiment, a method of operating the display / input unit which is different from that described in the embodiment mode will be described. Note that the configuration of the display unit and the input unit is the same as that shown in the embodiment, and a description thereof will be omitted with reference to FIGS. The operation method of the sensor unit of the present embodiment is the same as that shown in the embodiment, and FIG. 18 is referred to.

In this embodiment, the operation method of the EL display unit is different. FIG. 16 is a timing chart showing an operation method of the EL display unit of this embodiment.

First, one frame period (F) is divided into N subframe periods (SF1 to SFN). As the number of gradations increases, the number of subframe periods in one frame period also increases. Note that when the display / input unit displays an image, one frame period (F) refers to a period in which the EL display units of all the pixels of the display / input unit display one image.

In the case of this embodiment, it is preferable to provide a frame period of 60 or more per second. By setting the number of images displayed per second to 60 or more, it becomes possible to visually suppress flickering of images such as flicker.

The sub-frame period is the address period (Ta)
And a sustain period (Ts). The address period is a period during which a digital video signal is input to all pixels during one subframe period. Note that a digital video signal is a digital signal having image information. The sustain period (also referred to as a lighting period) indicates a period in which an EL element is turned on or off by a digital video signal input to a pixel in an address period to perform display. Note that a digital video signal refers to a digital signal having image information.

The address period (T) of SF1 to SFN
a) is Ta1 to TaN, respectively. SF1-SFN
Respectively have the sustain periods (Ts) of Ts1 to Ts
sN.

The potential of the power supply lines (V1 to Vx) is maintained at a predetermined potential (power supply potential).

First, in the address period Ta, the potential of the opposing electrode of the EL element 3301 is kept at the same level as the power supply potential.

Next, all the switching TFTs 3302 connected to the EL display gate signal line G1 are turned on by a signal input to the EL display gate signal line G1. Next, the EL display source signal lines (S1 to S
A digital video signal is input to x). The digital video signal has information of “0” or “1”,
One of the digital video signals “0” and “1” is Hi,
One is a signal having a voltage of Lo.

The source signal lines for EL display (S1 to S
x) is input to the EL driving TF through the switching TFT 3302 in the conductive state.
Input to the gate electrode of T3303.

Next, all the switching TFTs 3302 connected to the EL display gate signal line G1 are turned off, and the gate signal input to the EL display gate signal line G2 causes the EL display gate signal line to be turned off. All the switching TFTs 3302 connected to G2 are turned on. Next, the EL display source signal lines (S1 to S1)
A digital video signal is input to Sx). The digital video signal input to the EL display source signal lines (S1 to Sx) is input to the gate electrode of the EL driving TFT 3303 via the conductive switching TFT 3302.

The above operation is performed by the EL display gate signal line G.
Repeat until y, EL driving TFT 330 for all pixels
The digital video signal is input to the third gate electrode, and the address period ends.

At the same time when the address period Ta ends, the sustain period Ts starts. In the sustain period Ts,
All the switching TFTs 3302 are turned off. In the sustain period, all the EL elements 3301
Has a potential difference with the power supply potential to such an extent that the EL element 3301 emits light when the power supply potential is applied to the pixel electrode.

In this embodiment, when the digital video signal has information of “0”, the EL driving TFT 33
03 is a non-conductive state. No voltage is applied between the pixel electrode and the counter electrode of the EL element 3301 such that the EL element 3301 emits light. As a result, the EL element 3301 does not emit light in a pixel to which a digital video signal having information of “0” is input.

Conversely, when the digital video signal has information of “1”, the EL driving TFT 3303 is turned on. Therefore, a power supply potential is applied to the pixel electrode of the EL element 3301. As a result, the EL element 330 included in the pixel to which the digital video signal having the information “1” is input is provided.
1 emits light.

As described above, the EL element is turned on or off by the information of the digital video signal input to the pixel, and the pixel performs display.

At the end of the sustain period Ts,
One subframe period ends. Then, the next sub-frame period appears, the address period Ta starts again, and when the digital video signals are input to all the pixels, the sustain period Ts starts again. Note that the sub-frame periods SF1 to S
The order in which FNs appear is arbitrary.

The same operation is repeated in all sub-frame periods to perform display. When all the N sub-frame periods are completed, one image is displayed. Thus, one frame period ends. When one frame period ends, a sub-frame period of the next frame period appears,
The above operation is repeated.

In the present invention, the lengths of the address periods (Ta1 to TaN) of the N subframe periods are all the same. Also, N sustain periods Ts
The length ratio of TsN is, for example, Ts1: Ts
2: Ts3:...: Ts (N-1): TsN = 2 ⁰ :
2 ^-1 : 2 ^-2 : ...: 2- ^(N-2) : 2- ^(N-1) .

The gradation of each pixel is determined by which sub-frame period emits light in one frame period.
For example, Ts1: Ts2: Ts3: ...: Ts (N−
1): TsN = 2 ⁰ : 2 ^-1 : 2 ^-2 : ...: 2- ^(N-2) : 2
^When-(N-1) , N = 8 is taken as an example. Assuming that the luminance of a pixel when the pixel emits light in all the sustain periods Ts1 to Ts8 is 100%, 75% of the luminance can be expressed when the pixel emits light in Ts1 and Ts2.
When Ts5 and Ts8 are selected, 16% luminance can be expressed.

As described above, a method of displaying an image by inputting a digital signal to the source signal lines S1 to Sx and causing the EL elements of the pixels to emit light is referred to as a digital method.

Next, an operation method of the sensor unit will be described with reference to FIG.
And FIG. 3 and FIG.

Here, the reset TFT 3308 is an n-channel TFT, the buffer TFT 3307 is a p-channel TFT, and the selection TFT 3306 is an n-channel TFT. Each of them may be either an n-channel TFT or a p-channel TFT. Note that the polarity of the reset TFT 3308 and the polarity of the buffer TFT 3307 are desirably opposite.

First, all the reset TFTs 3308 connected to the reset gate signal line RG1 are turned on by the signal of the reset gate signal line RG1.
At this time, it is assumed that the reset gate signal line RG1 is selected. Note that all the reset TFTs 3308 connected to the other reset gate signal lines RG2 to RGy are all non-conductive. At this time, in the first pixel row, the potential of the sensor power supply line VB is set via the reset TFT 3308 through the buffer T
Applied to the gate electrode of FT3307. Thus, a reverse bias voltage is applied between the electrodes of the photodiode 3305. At this time, the source region of the buffer TFT 3307 is at the potential (reference potential) of the sensor power supply line VB.
Is maintained at a potential obtained by subtracting the potential difference between the source region and the gate region of the buffer TFT 3307.

At this time, all the selection TFTs 3306 connected to the sensor gate signal line SG1 are non-conductive by the signal of the sensor gate signal line SG1.

In this specification, a period during which the reset gate signal line is selected is referred to as a reset period RS.

Next, the signal of the reset gate signal line RG1 changes, and all the reset TFTs 3308 connected to the reset gate signal line RG1 are turned off. At this time, the reset gate signal line is not selected. Then, the photodiode 3305
Is irradiated with light, a current flows between the electrodes of the photodiode 3305, and the reverse bias voltage applied between the electrodes of the photodiode 3305 during the reset period decreases. Thereafter, all the selection TFTs 3306 connected to the sensor gate signal line SG1 are turned on by a signal input to the sensor gate signal line SG1.

The period from when the reset gate signal line is unselected to when the selection TFT corresponding to the pixel on the same line is selected is called a sampling period ST. In particular, a period from when the reset gate signal line RG1 is deselected to when the selection gate signal line SG1 is selected is referred to as a first sampling period ST1.

In the sampling period ST1, the reverse bias voltage between the electrodes of the photodiode 3305 decreases with time. The degree to which the reverse bias voltage decreases depends on the intensity of light applied to the photoelectric conversion layer of the photodiode 3305. Here, the electrode of the photodiode 3305 on the side not connected to the gate electrode of the buffer TFT 3307 is kept at a constant potential. Therefore, the buffer T of the photodiode 3305
The potential of the side of the FT 3307 connected to the gate electrode decreases.

This decrease in potential is caused by the buffer TFT 33
07, the potential of the gate electrode is lowered.

Here, the buffer TFT 330 of each pixel
7 are connected to the constant current sources 2203-1 to 2203-1 through the drain and source of the selection TFT 3306, respectively.
203-x, the buffer TFT 3
307 acts as a source follower. Therefore, the gate-source voltage of the buffer TFT 3307 is always kept equal. Therefore, the photodiode 3305
Of the buffer TFT 33
When the potential of the gate electrode 07 changes, the potential of the source region of the buffer TFT 3307 also changes by the same potential. After the sampling period ST1, the sensor gate signal line SG1 is selected, and the change in the potential of the source region of the buffer TFT 3307 is determined by the sensor output lines SS1 to SS1.
Output to SSx.

Thereafter, the sensor gate signal line SG1 is
It will be unselected.

On the other hand, when the reset gate signal line RG1 is in a non-selected state, the reset gate signal line RG2 is selected. All the reset TFTs 3308 connected to the reset gate signal line RG2 become conductive,
The reset period RS of the second line starts. Thereafter, the reset gate signal line RG2 is in a non-selected state, and the sampling period ST2 of the second line starts. In addition,
The first sampling period ST1 and the second sampling period ST2 have different start times but the same length.

Similarly, in the second sampling period ST2, the reverse bias voltage between the electrodes of the photodiode is reduced in the sensor section of each pixel according to the intensity of the input light. After the second sampling period ST2, all the selection TFTs 3306 connected to the sensor gate signal line SG2 are output by the signal of the sensor gate signal line SG2.
Becomes conductive, the change in the potential between the electrodes of the photodiode 3305 input to the gate electrode of the buffer TFT 3307 becomes a change in the potential of the source region of the buffer TFT 3307, and the sensor output wirings SS1 to SS
Output to Sx.

Thereafter, the sensor gate signal line SG2 is in a non-selected state.

The above operation is repeated for all the sensor gate signal lines SG1 to SGy, and the display and input
The intensity of the light input to each of the sensor units 3312 of all the pixels 01 is read as a corresponding voltage signal.

In the case where the display / input unit of the information device of the present invention is operated by the above operation method, the address period (Ta1 to Ta1) is used.
In TaN), the EL display portion of the pixel does not emit light. Therefore, when the light of the EL element is reflected by the pen tip of the input pen and input to the photodiode as described in the first and second embodiments, the signal is originally generated during the address period (Ta1 to TaN). Light is not input to the photodiode of the pixel to be input, and the reverse bias voltage between the electrodes of the photodiode does not decrease. That is, in the address period (Ta1 to TaN), information for specifying the position of the pen tip of the input pen is not input.

In a pixel indicated by the pen tip of the input pen, there is a sub-frame period in which the pixel does not emit light, depending on the gradation displayed by the pixel. That is, during the sub-frame period in which the pixel does not emit light, light is not originally input to the photodiode of the pixel to which a signal is to be input, and information for specifying the position of the pen tip of the input pen is not input.

However, the length of the one-screen reading period of the sensor unit is usually equal to the address period (Ta1 to Ta1) of the EL display unit.
TaN) is set sufficiently longer than TaN).

That is, the length of the sampling period ST1 to STy of the sensor unit of each pixel is determined by the address organization Ta1 to T1.
The length is set sufficiently longer than the length of aN.

Therefore, a period during which the EL element emits light can be sufficiently ensured during the one-screen reading period of the sensor section.

In general, the period for reading one screen of the sensor unit is equal to or longer than one frame period of the EL display unit.
Therefore, a pixel corresponding to the sum of the sub-frame periods during which the EL element emits light during a period of reading one screen of the sensor unit from a pixel near the pen point of the input pen is indicated.
Light is intermittently applied to the pen tip of the input pen. Using the irradiated light, light can be input to a photodiode of a pixel near the point indicated by the pen tip of the input pen.

Thus, the position of the pen tip of the input pen can be specified.

This embodiment can be freely combined with Embodiments 1 and 2.

[Embodiment 4] The information device of the present invention can be used not only for inputting information with an input pen but also as an image sensor.

FIG. 20 is a schematic diagram when the information device of the present invention is used as an image sensor for reading information on the surface of a subject.

The circuit configuration of the display / input unit of the information device is as follows.
The description is omitted here because it is similar to the embodiment. In addition, in the schematic diagram of FIG. 20, the same parts as those of FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted.

The method of driving the display / input unit is as follows.
Since a method similar to that described in the embodiment mode or the third embodiment can be used, the description is omitted here.

The object to be read (object to be read (subject): 425) is brought closer to the pen input side of the display / input unit of the information device of the present invention. Here, the EL element 422 of each pixel is caused to emit light by a method similar to that described in the embodiment mode, the example 3, and the like. Using the light emission of the EL element 422, light is emitted to the reading target object 425.
That is, the EL element 422 of each pixel is used as an illumination device for reading information on the reading target object 425.

Therefore, when the information device of the present invention is used as an image sensor, it is desirable that the EL elements of each pixel have the same light emission luminance.

That is, when the EL element of each pixel is driven by the analog method as shown in the embodiment, the analog signal input from the EL source signal line is made equal to all the pixels.

On the other hand, when the EL element of each pixel is driven by a digital method as shown in the third embodiment,
All pixels emit light for the same length of time within one frame period. In order to emit light as continuously as possible, it is preferable that the EL elements of all the pixels are set to emit light in all the sustain periods in one frame period.

Thus, the light irradiated on the reading object 425 is reflected on the surface of the reading object 425,
It is input to the photodiode 421 of the sensor unit of each pixel. The input light is converted into an electric signal, read out by a sensor driver circuit (sensor source signal line driver circuit, sensor gate signal line driver circuit), and information on the surface of the reading object 425 is converted into an image. can get.

Here, the present embodiment has been described using the information device having the configuration shown in the first embodiment, but the second embodiment uses the information device having the configuration shown in FIG. The information on the surface of the object to be read can also be read by bringing the object to be read closer from the side where the TFT is formed on the substrate on which the portion is formed.

This embodiment can be implemented by freely combining with Embodiments 1 to 3.

[Embodiment 5] A method of manufacturing a display section and an input section of an information device according to the present invention will be described with reference to FIGS.

First, in FIG. 10A, in this embodiment, a substrate 20 made of glass such as barium borosilicate glass or alumino borosilicate glass typified by Corning # 7059 glass or # 1737 glass.
0 is used. Note that the substrate 200 is not limited as long as it has a light-transmitting property, and a quartz substrate may be used.
Further, a glass substrate, a ceramic substrate, or the like may be used.
Further, a plastic substrate having heat resistance enough to withstand the processing temperature of this embodiment may be used.

As the substrate 200, a stainless steel substrate may be used. However, since the stainless steel substrate is not transparent, it is effective only when the light emitted from the EL element is emitted to the side opposite to the substrate 200.

Next, the substrate 200 is covered so as to cover the substrate 200.
An insulating film made of silicon oxide is formed thereon. As the insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film can be used. For example, SiH ₄ , N
H _3, N ₂ O silicon oxynitride film made from 250-8
00 nm (preferably 300 to 500 nm), and similarly S
A silicon oxynitride hydride film formed from iH ₄ and N ₂ O
It may be formed to have a thickness of 50 to 800 nm (preferably 300 to 500 nm). Here, the insulating film made of silicon oxide has a single-layer structure and a thickness of 0.5 to 1.5 μm. Note that the material of the insulating film is not limited to silicon oxide.

Next, the planarization insulating film 201 is formed by polishing the insulating film by the CMP method. The CMP method can be performed by a known method. In the polishing of an oxide film, a slurry of a solid-liquid dispersion system in which an abrasive having a diameter of 100 to 1000 nm is generally dispersed in an aqueous solution containing a reagent such as a pH adjuster is used. In this embodiment, a silica slurry (PH = 10 to 11) in which 20 wt% of fumed silica particles obtained by thermally decomposing silicon chloride gas are dispersed in an aqueous solution to which potassium hydroxide is added.

After the formation of the planarizing insulating film 201, semiconductor layers 202 to 206 are formed on the planarizing insulating film 201. The semiconductor layers 202 to 206 are formed by forming a semiconductor film having an amorphous structure by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) and then performing a known crystallization treatment (a laser crystallization method, a thermal crystallization method, or the like). A crystalline semiconductor film obtained by performing a crystallization method or a thermal crystallization method using a catalyst such as nickel) is patterned and formed into a desired shape. The semiconductor layers 202 to 206 are formed to have a thickness of 25 to 80 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x Ge _1-x (X = 0.0001-
0.02)) It is good to form with an alloy etc. In this embodiment, after a 55 nm amorphous silicon film is formed by using the plasma CVD method, a solution containing nickel is held on the amorphous silicon film. Dehydrogenation (500 ° C.,
1 hour), thermal crystallization (550 ° C., 4 hours) was performed, and further, a laser annealing process for improving crystallization was performed to form a crystalline silicon film. Then, semiconductor layers 202 to 206 were formed by patterning the crystalline silicon film using a photolithography method.

After the formation of the semiconductor layers 202 to 206, a slight amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

In the case where a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser can be used. In the case of using these lasers, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly condensed by an optical system and irradiated on a semiconductor film. The crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is set to 300 Hz, and the laser energy density is set to 100 to 4.
(Typically ^{200~300mJ / cm 2) 00mJ / cm} 2 to.
When a YAG laser is used, the second harmonic is used, the pulse oscillation frequency is preferably 30 to 300 kHz, and the laser energy density is preferably 300 to 600 mJ / cm ² (typically 350 to 500 mJ / cm ² ). And width 10
A laser beam condensed linearly at 0 to 1000 μm, for example 400 μm, is irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear laser light at this time is 50 to
What is necessary is just 98%.

Next, a gate insulating film 209 covering the semiconductor layers 202 to 206 is formed. The gate insulating film 209 is formed by a plasma CVD method or a sputtering method and has a thickness of 40 to
The insulating film containing silicon is formed to have a thickness of 150 nm. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N =
7%, H = 2%). Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) is formed by a plasma CVD method.
And O ₂ are mixed at a reaction pressure of 40 Pa and a substrate temperature of 300 to
400 ° C., high frequency (13.56 MHz) power density 0.
It can be formed by discharging at 5 to 0.8 W / cm ² .
The silicon oxide film thus manufactured is thereafter
Good characteristics as a gate insulating film can be obtained by thermal annealing at up to 500 ° C.

Next, as shown in FIG. 10A, a first conductive film 210a having a thickness of 20 to 100 nm and a second conductive film 210b having a thickness of 100 to 400 nm are stacked over the gate insulating film 209. Form. In this embodiment, the film thickness is 30 n
a first conductive film 210a made of a TaN film having a thickness of
A second conductive film 210b of a 70 nm W film was formed by lamination. The TaN film was formed by a sputtering method, and was sputtered using a Ta target in an atmosphere containing nitrogen. The W film was formed by a sputtering method using a W target. Alternatively, it can be formed by a thermal CVD method using tungsten hexafluoride (WF ₆ ). In any case, in order to use it as a gate electrode, it is necessary to reduce the resistance, and it is desirable that the resistivity of the W film be 20 μΩcm or less. The resistivity of the W film can be reduced by enlarging the crystal grains. However, when the W film contains many impurity elements such as oxygen, the crystallization is inhibited and the resistance is increased. Therefore, in this embodiment, high-purity W (purity 99.99999) is used.
%), A resistivity of 9 to 20 μΩcm can be achieved by forming a W film with sufficient care so that no impurities are mixed in the gas phase during film formation by a sputtering method using a target of (%). Was.

In this embodiment, the first conductive film 210
a is TaN, and the second conductive film 210b is W. However, there is no particular limitation, and any of Ta, W, Ti, Mo, Al, C
It may be formed of an element selected from u, Cr, and Nd, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Also, A
A gPdCu alloy may be used. A first conductive film formed of a tantalum (Ta) film, a second conductive film formed of a W film, a first conductive film formed of a titanium nitride (TiN) film, and a second conductive film formed of a titanium nitride (TiN) film; As a W film, the first
The first conductive film is formed of a tantalum nitride (TaN) film, the second conductive film is formed of a tantalum nitride (TaN) film, the second conductive film is formed of a tantalum nitride (TaN) film, and the second conductive film is formed of a Cu film. May be combined.

Next, a mask 211 made of resist is formed by photolithography, and a first etching process for forming electrodes and wirings is performed (FIG. 10).
(B)). The first etching process is performed under the first and second etching conditions. In this embodiment, as the first etching condition, an ICP (Inductively Coupled Plasma) etching method is used, CF ₄ , Cl _2, and O ₂ are used as etching gases, and the respective gas flow ratios are 25. / 25/10 (sccm), 500 W RF (13.56 MHz) power was applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and perform etching. Here, a dry etching apparatus (Model E645- □ ICP) using ICP manufactured by Matsushita Electric Industrial Co., Ltd. was used. 150W RF (13.56
MHz) power is applied and a substantially negative self-bias voltage is applied. The W film is etched under the first etching conditions to make the end of the first conductive layer tapered.
The etching rate for W under the first etching condition is 200.39 nm / min, the etching rate for TaN is 80.32 nm / min, and the selectivity ratio of W to TaN is about 2.5. Further, the taper angle of W is about 26 ° under the first etching condition.

In the first etching process, the shape of the mask 211 made of resist is made appropriate, and the first etching process is performed by the effect of the bias voltage applied to the substrate side.
End portions of the conductive layer and the second conductive layer are tapered. The angle of the tapered portion may be 15 to 45 degrees. Thus, the first-shaped conductive layers 212 to 212 formed of the first conductive layer and the second conductive layer are formed by the first etching process.
216 (the first conductive layers 212a to 216a and the second conductive layers 212b to 216b) are formed. Reference numeral 217 denotes a gate insulating film. A region which is not covered with the first shape conductive layers 212 to 216 is etched by about 20 to 50 nm to form a thinned region.

Next, a second etching process is performed without removing the resist mask (FIG. 10C). Here, CF ₄ , Cl _2, and O ₂ are used as etching gases, and the respective gas flow ratios are 25/25/10 (scc
m) and 500 W of R on the coil type electrode at a pressure of 1 Pa.
F (13.56 MHz) power was applied to generate plasma to perform etching. A 20 W RF (13.56 MHz) power is also applied to the substrate side (sample stage) and a substantially negative self-bias voltage is applied. The etching rate for W in the second etching process is 124.62 nm / min, and Ta is
The etching rate for N is 20.67 nm / min, and the selectivity ratio of W to TaN is 6.05. Therefore, the W film is selectively etched. The taper angle of W became 70 ° by the second etching. By this second etching process, the second conductive layers 218b to 218b-2
22b is formed. On the other hand, the first conductive layers 218 a to 218 a
2a is hardly etched. Reference numeral 223 denotes a gate insulating film, and a region which is not covered with the second shape conductive layers 218 to 222 is etched by about 20 to 50 nm to form a thinned region.

The first conductive layer 218a and the second conductive layer 21
8b becomes an n-channel type buffer TFT to be formed in a later step, and becomes the first conductive layer 21b.
The electrode formed by the second conductive layer 9a and the second conductive layer 219b becomes an n-channel type selection TFT formed in a later step. Similarly, the first conductive layer 220a and the second conductive layer 22
0b becomes a p-channel type reset TFT formed in a later step, and the first conductive layer 22
1a and the second conductive layer 221b are connected to an n-channel switching TF formed in a later step.
T, the first conductive layer 222a and the second conductive layer 222
The electrode formed with b is a p-channel type EL driving TFT formed in a later step.

Next, a first doping process is performed to obtain the state shown in FIG. Doping is performed on the second conductive layer 2
18b to 222b are used as masks for the impurity elements, and the semiconductor layers below the tapered portions of the first conductive layers 218a to 222a are doped so that the impurity elements are added. In this embodiment, P (phosphorus) is used as the impurity element, the dose is 3.5 × 10 ¹² atoms / cm ³ , and the acceleration voltage is 90.
Plasma doping was performed at keV. Thus the first
Impurity regions 224a to 224a which do not overlap with the conductive layer
8a and a low concentration impurity region 224 overlapping the first conductive layer.
b to 228b are formed in a self-aligned manner. The concentration of phosphorus (P) added to the low concentration impurity regions 224b to 228b is 1 × 10 ¹⁷ to 1 × 10 ¹⁸ atoms / cm ³ , and
The first conductive layers 218a to 222a have a gentle concentration gradient according to the thickness of the tapered portion. Note that in the semiconductor layer overlapping with the tapered portions of the first conductive layers 218a to 222a, although the impurity concentration slightly decreases from the end of the tapered portion of the first conductive layers 218a to 222a toward the inside, almost It is about the same concentration.

Then, a mask 231 made of a resist is formed, a second doping process is performed, and an impurity element imparting n-type is added to the semiconductor layer (FIG. 11B). The doping treatment may be performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose amount is 1 ×
10 ^{13 to} 5 × 10 ¹⁵ atoms / cm ³ and an acceleration voltage of 60 to
It is performed at 100 keV. In this embodiment, the dose is 1.
The test was performed at 5 × 10 ¹⁵ atoms / cm ³ and an acceleration voltage of 80 keV. As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically phosphorus (P) or arsenic (As) is used. Here, phosphorus (P) is used. In this case, the conductive layers 218 to 222 serve as a mask for the impurity element imparting n-type, and are self-aligned with the high-concentration impurity regions 232.
a to 236a, low-concentration impurity regions 232b to 236b not overlapping the first conductive layer, and low-concentration impurity regions 232c to 236c overlapping the first conductive layer are formed. The high-concentration impurity regions 232a to 236a have 1 × 10 ²⁰ to 1 × 10
^An n-type impurity element is added in a concentration range of ²¹ atoms / cm ³ .

Note that the semiconductor film on which the p-channel type semiconductor film is formed does not need to be doped with an n-type impurity by the second doping treatment shown in FIG. It may be formed so as to completely cover the layers 204 and 206 so that n-type impurities are not doped. Conversely, the mask 231 is
Alternatively, the polarity of the semiconductor layer may be inverted to p-type in the third doping process without being provided on the fourth and 206.

Next, after removing the resist mask 231, a new resist mask 239 is formed and a third doping process is performed. By the third doping process, the semiconductor layer serving as the active layer of the p-channel TFT has a conductivity type (p-type) opposite to the one conductivity type (n-type).
Region 240a to which an impurity element imparting the impurity is added
To 240c and 241a to 241c (FIG. 11).
(C)). Using the first conductive layers 220b and 222b as a mask for the impurity element, an impurity element imparting p-type is added to form an impurity region in a self-aligned manner. In this embodiment, the impurity regions 240a to 240c and 241a to
241c is formed by an ion doping method using diborane (B ₂ H ₆ ). During the third doping process, the semiconductor layer forming the n-channel TFT is covered with a resist mask 239. Phosphorus is added at different concentrations to the impurity regions 240a, 240b, and 240c by the first doping process and the second doping process, but the concentration of the impurity element imparting p-type is increased in any of the regions. 2 × 10 ²⁰ to 2 ×
By performing the doping treatment so that the concentration becomes 10 ²¹ atoms / cm ³ , no problem arises because the p-channel TFT functions as a source region and a drain region.

Next, a step of activating the impurity element added to each semiconductor layer is performed. This activation step is performed in a thermal annealing furnace using a furnace annealing furnace. As the thermal annealing method, the oxygen concentration is 1 PPm or less,
Preferably in a nitrogen atmosphere of 0.1 PPm or less 400 ~
700 ° C., typically at 500-550 ° C.
In this embodiment, the activation treatment is performed by heat treatment at 550 ° C. for 4 hours. Note that, other than the thermal annealing method, a laser annealing method, a rapid thermal annealing method (RTA method), or the like can be applied.

The activation process may be performed after forming the first interlayer insulating film. However, when the wiring material used for the wiring is weak to heat, an interlayer insulating film (an insulating film containing silicon as a main component,
It is preferable to perform the activation process after forming the silicon nitride film).

Further, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% of hydrogen to hydrogenate the semiconductor layer. In this embodiment,
Heat treatment was performed at 410 ° C. for one hour in a nitrogen atmosphere containing about 3% of hydrogen. This step is a step of terminating dangling bonds of the semiconductor film with thermally excited hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) can be used.

A hydrogenation step may be performed after forming the passivation film.

Through the above steps, impurity regions are formed in the respective semiconductor layers.

Next, the mask 239 made of resist is removed, and a third etching process is performed. In this embodiment, the gate insulating film is etched using the conductive layers 218 to 222 as a mask.

[0221] By the third etching process, gate insulating films 243c to 247c are turned into second conductive layers 243b to 243c.
7b (see FIG. 12A).

Next, a passivation film 291 is formed so as to cover the substrate 200 (FIG. 12B). As the passivation film 291, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film can be used. For example, a silicon oxynitride film formed from SiH ₄ , NH ₃ , and N ₂ O by a plasma CVD method has a thickness of 250 to 800 nm (preferably 300 to 800 nm).
To 500 nm), and a silicon oxynitride hydride film similarly made of SiH ₄ and N ₂ O may be stacked to a thickness of 250 to 800 nm (preferably 300 to 500 nm). In this embodiment, the passivation film 291 made of nitrogen oxide has a single-layer structure and a thickness of 0.5 to 1.5 μm.

Next, a first interlayer insulating film 249 is formed. The insulating film containing silicon is formed with a thickness of 100 to 200 nm by a plasma CVD method or a sputtering method. In this embodiment, the film thickness is 150
A silicon oxynitride film of nm was formed. Needless to say, the first interlayer insulating film 249 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure. Next, each of the impurity regions 232a, 233a,
Patterning is performed to form contact holes reaching 35a, 240a, and 241a.

Next, source wirings 251 to 255 and drain wirings 257 to 261 are formed (FIG. 12C).
In this embodiment, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component or a laminated film thereof, as a material of the wiring.

Next, as shown in FIG.
The second passivation film 268 is formed to a thickness of 00 nm (typically 200 to 300 nm). In this embodiment, a silicon nitride oxide film having a thickness of 300 nm is used as the second passivation film 268. This may be replaced by a silicon nitride film. Note that H ₂ , N ₂
It is effective to perform plasma treatment using a gas containing hydrogen such as H ₃ .

Next, a second interlayer insulating film 2 made of an organic resin
Form 69. As the organic resin, polyimide, polyamide, acrylic, BCB (benzocyclobutene), or the like can be used. In particular, since the second interlayer insulating film 269 has a strong meaning of flattening, acrylic having excellent flatness is preferable. In this embodiment, an acrylic film is formed with a thickness that can sufficiently flatten a step formed by a TFT. The thickness is preferably 1 to 5 μm (more preferably 2 to 4 μm).

Next, a contact hole reaching the drain wiring 259 is formed in the second interlayer insulating film 269 and the second passivation film 268, and a cathode electrode 270 of a photodiode is formed so as to be in contact with the drain wiring 259. In this embodiment, an aluminum film formed by a sputtering method is used as the cathode electrode 270, but other metals, for example, titanium, tantalum, tungsten, and copper can be used. Alternatively, a stacked film including titanium, aluminum, and titanium may be used.

Next, an amorphous silicon film containing hydrogen is formed over the entire surface of the substrate and then patterned to form a photoelectric conversion layer 271.
To form Next, a transparent conductive film is formed on the entire surface of the substrate.
In this embodiment, a 200 nm thick ITO is used as the transparent conductive film.
Is formed by a sputtering method. The anode electrode 272 is formed by patterning the transparent conductive film. (FIG. 13 (B))

Next, as shown in FIG. 14A, a third interlayer insulating film 273 is formed. By using a resin such as polyimide, polyamide, polyimide amide, or acrylic as the third interlayer insulating film 273, a flat surface can be obtained. In this embodiment, a polyimide film having a thickness of 0.7 μm is formed on the entire surface of the substrate as the third interlayer insulating film 273.

Next, a contact hole reaching the drain wiring 261 is formed in the third interlayer insulating film 273, the second interlayer insulating film 269, and the second passivation film 268, and a pixel electrode 275 is formed. Also, the third interlayer insulating film 273 has
A contact hole reaching the anode electrode 272 is formed, and a sensor wiring 274 is formed. In this embodiment, an aluminum alloy film (an aluminum film containing 1% by weight of titanium) is formed to a thickness of 300 nm, and is patterned to form the sensor wiring 274 and the pixel electrode 275 at the same time.

Next, as shown in FIG. 14B, a bank 276 made of a resin material is formed. Bank 276 is 1 to
An acrylic or polyimide film having a thickness of 2 μm may be formed by patterning. The bank 276 has the source wiring 25
4 or may be formed along a gate wiring (not shown). Note that the bank 276 may be used as a shielding film by mixing a pigment or the like with the resin material forming the bank 276.

Next, a light emitting layer 277 is formed. Specifically, the organic EL material that becomes the light emitting layer 277 is dissolved in a solvent such as chloroform, dichloromethane, xylene, toluene, and tetrahydrofuran and applied, and then the solvent is volatilized by performing a heat treatment. Thus, a film (light emitting layer) made of the organic EL material is formed.

Although only one pixel is shown in this embodiment, when an information device for performing color display is manufactured, a light emitting layer that emits red light, a light emitting layer that emits green light, and a light emitting layer that emits blue light at the same time. A light emitting layer is formed. In this embodiment, cyanopolyphenylenevinylene is formed as a light emitting layer emitting red light, polyphenylenevinylene is formed as a light emitting layer emitting green light, and polyalkylphenylene is formed as a light emitting layer emitting blue light to a thickness of 50 nm. In addition, 1,2-dichloromethane was used as a solvent, and 80
A heat treatment is performed for 1 to 5 minutes on a hot plate at １５０150 ° C. to evaporate.

In this embodiment, the EL layer has a single-layer structure composed of a light-emitting layer. However, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and the like may be additionally provided. Various examples of such combinations have already been reported, and any of these configurations may be used.

After forming the light emitting layer 277, an anode 279 made of a transparent conductive film is formed as a counter electrode to a thickness of 120 nm. In this embodiment, 10-20 w
A transparent conductive film to which t% of zinc oxide is added is used. The film is preferably formed by an evaporation method at room temperature so as not to deteriorate the light-emitting layer 277.

After forming the anode 279, a fourth interlayer insulating film 280 is formed as shown in FIG. By using a resin such as polyimide, polyamide, polyimide amide, or acrylic as the fourth interlayer insulating film 280, a flat surface can be obtained. In this embodiment, a polyimide film having a thickness of 0.7 μm is formed on the entire surface of the substrate as the fourth interlayer insulating film 280.

Thus, a substrate having a structure as shown in FIG. 14B (hereinafter, referred to as a TFT substrate) is completed. Note that, after the bank 276 is formed, the steps from the step of forming the fourth interlayer insulating film 280 to the step of forming the fourth interlayer insulating film 280 using a multi-chamber (or in-line) thin film forming apparatus can be continuously performed without opening to the atmosphere. It is valid.

As described above, the buffer TFT 30
4, selection TFT 305, reset TFT 303, photodiode 306, switching TFT 301,
The EL driving TFT 302 and the EL element 269 can be formed over the same substrate.

Note that the TFTs constituting each of the driving circuits (EL display source signal line driving circuit, EL display gate signal line driving circuit, sensor source signal line driving circuit, sensor gate signal line driving circuit) are also described above. It can be similarly manufactured by a manufacturing process. Thus, each drive circuit can be formed on the same substrate as the display / input unit.

Note that this embodiment can be freely combined with Embodiments 1 to 4.

[Embodiment 6] In this embodiment, an example in which an information device is manufactured using the present invention will be described with reference to FIGS.

FIG. 6A is a top view of an information device formed by sealing a TFT substrate with a sealing material, and FIG. 6B is a sectional view taken along line AA ′ of FIG. 6A. FIG. 6C is a cross-sectional view taken along line BB ′ of FIG. 6A.

A display / input section 4002 provided on the same substrate 4001, source signal line drive circuits 4003a and 4003b for sensors and EL elements,
A sealant 4009 is provided so as to surround the element gate signal line driver circuits 4004a and 4004b. A display / input unit 4002; source signal line driving circuits 4003a and 4003b for sensors and EL elements; and gate signal line driving circuits 4004a and 400b for sensors and EL elements.
Is provided with a sealing material 4008. Accordingly, the display / input unit 4002, the source signal line driver circuits 4003a and 4003b for sensors and EL elements, and the first and second gate signal line driver circuits 4004a and 4004b for sensors and EL elements are Substrate 4001 and sealant 400
9 and the sealing material 4008, the filler 4210
Sealed.

A display / input unit 4002 provided on a substrate 4001, source signal line driving circuits 4003a and 4003b for sensors and EL elements,
The element gate signal line driver circuits 4004a and 4004b have a plurality of TFTs. In FIG. 6B, typically, a display portion / input portion 4002 formed over a base film 4010 is shown.
Resetting TFT (TFT for applying a reverse bias voltage to the photodiode) 4201 and EL driving TFT (TFT controlling current to the EL element) 42 included in
02, the photodiode 4211 is shown.

In this embodiment, the reset TFT 4201 is used.
, An n-channel TFT manufactured by a known method is used, and a p-channel TFT manufactured by a known method is used as the EL driving TFT 4202. Further, the display portion / input portion 4002 is provided with a storage capacitor (not shown) connected to the gate of the EL driving TFT 4202.

The reset TFT 4201 and the EL drive T
A first interlayer insulating film (planarization film) 431 is formed on the FT 4202.
1 is formed. Next, a second interlayer insulating film (flattening film) 43
02 is formed, and the photodiode 4211 is formed thereon. Next, a third interlayer insulating film 4403 is formed,
A pixel electrode (anode) 4203 electrically connected to the drain of the EL driving TFT 4202 is formed thereon. As the pixel electrode 4203, a transparent conductive film having a large work function is used. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Further, a material obtained by adding gallium to the transparent conductive film may be used.

[0247] An insulating film 4404 is formed on the pixel electrode 4203, and the insulating film 4404 is formed on the pixel electrode 4203.
An opening is formed on 3. In this opening, an EL (electroluminescence) layer 4204 is formed on the pixel electrode 4203. For the EL layer 4204, a known organic EL material or inorganic EL material can be used. As the organic EL material, there are a low molecular (monomer) material and a high molecular (polymer) material, and either of them may be used.

As a method for forming the EL layer 4204, a known evaporation technique or coating technique may be used. The structure of the EL layer may be a stacked structure or a single-layer structure by freely combining a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer.

On the EL layer 4204, a cathode 4205 made of a light-shielding conductive film (typically, a conductive film containing aluminum, copper, or silver as a main component or a laminated film of these and another conductive film) is provided. It is formed. In addition, the cathode 4205
It is desirable to remove moisture and oxygen existing at the interface between the EL layer 4204 and oxygen as much as possible. Therefore, it is necessary to devise a method in which the EL layer 4204 is formed in a nitrogen or rare gas atmosphere and the cathode 4205 is formed without being exposed to oxygen or moisture. In this embodiment, the above-described film formation is made possible by using a multi-chamber type (cluster tool type) film formation apparatus. The cathode 4205 is given a predetermined voltage.

As described above, the pixel electrode (anode) 42
03, an EL element 4303 comprising an EL layer 4204 and a cathode 4205 is formed. Then, a protective film 4209 is formed over the insulating film 4404 so as to cover the EL element 4303. The protective film 4209 is effective in preventing oxygen, moisture, and the like from entering the EL element 4303.

A wiring 4005 is connected to the power supply line and is electrically connected to the source region of the EL driving TFT 4202. The lead wiring 4005 passes between the sealant 4009 and the substrate 4001 and passes through the FPC 4006 via the anisotropic conductive film 4300.
The wiring is electrically connected to the PC wiring 4301.

As the sealing material 4008, a glass material, a metal material (typically, a stainless steel material), a ceramic material, and a plastic material (including a plastic film) can be used. FRP as plastic material
(Fiberglass-Reinforced Pl
aics) plate, PVF (polyvinyl fluoride)
A film, a mylar film, a polyester film, or an acrylic resin film can be used. Further, a sheet having a structure in which an aluminum foil is sandwiched between PVF films or mylar films can also be used.

However, when the direction of light emission from the EL element is directed toward the cover material, the cover material must be transparent. In that case, a transparent material such as a glass plate, a plastic plate, a polyester film or an acrylic film is used.

As the filler 4210, an ultraviolet curable resin or a thermosetting resin can be used in addition to an inert gas such as nitrogen or argon, and PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, Resin, PVB (polyvinyl butyral) or EV
A (ethylene vinyl acetate) can be used. In this embodiment, nitrogen was used as the filler.

Further, in order to expose the filler 4210 to a hygroscopic substance (preferably barium oxide) or a substance capable of adsorbing oxygen, the substrate 400
A concave portion 4007 is provided on the one surface, and a hygroscopic substance or a substance 4207 capable of adsorbing oxygen is arranged. Then, the hygroscopic substance or the substance 4207 capable of adsorbing oxygen is held in the concave part 4007 by the concave part cover material 4208 so that the hygroscopic substance or the substance 4207 capable of adsorbing oxygen is not scattered. Note that the concave portion cover member 4208 has a fine mesh shape, and has a configuration in which air and moisture are allowed to pass, and a hygroscopic substance or a substance 4207 capable of adsorbing oxygen is not allowed to pass. By providing the hygroscopic substance or the substance 4207 which can absorb oxygen, deterioration of the EL element 4303 can be suppressed.

As shown in FIG. 6C, the pixel electrode 420
At the same time as the formation of the conductive film 3, the conductive film 4203 a is formed so as to be in contact with the lead wiring 4005.

The anisotropic conductive film 4300 has a conductive filler 4300a. Substrate 4001 and F
By thermocompression bonding with the PC 4006, the conductive film 4203a on the substrate 4001 and the FPC wiring 4301 on the FPC 4006 are electrically connected by the conductive filler 4300a.

This embodiment can be implemented by freely combining with Embodiments 1 to 5.

[Embodiment 7] In this embodiment, an example in which a photoelectric conversion element of an information device of the present invention is manufactured using an organic substance will be described.

A photodiode will be described as an example of the photoelectric conversion element.

[0261] An organic substance is used for the photoelectric conversion layer of the photodiode. Specifically, azo pigments, polycyclic compounds such as perylene, phthalocyanine pigments, ionic dyes, and the like can be used. Here, the photoelectric conversion layer is referred to as a charge generation layer.

In addition to the charge generation layer, a charge injection barrier layer, a charge transport layer, and the like can be provided.

As the charge transport layer, hydrazone derivatives,
Low molecular compounds such as stilbenzene derivatives and triphanylamine derivatives, and high molecular materials such as polysilane derivatives can be used.

By providing such a charge transport layer, the light response characteristics of the photodiode can be improved.

As the charge injection barrier layer, copolymer nylon or the like can be used.

A method for manufacturing a photodiode having such a stacked structure of the charge injection barrier layer, the charge generation layer, and the charge transport layer will be described with reference to FIG.

An anode electrode 991 of an ITO film is formed,
A charge injection barrier layer 992, a charge generation layer 993, a charge transport layer 994, and a cathode electrode 996 are formed thereon in this order.

Here, a copolymer nylon layer is applied as the charge injection barrier layer 992.

Then, the charge generation layer 993 is formed by dispersing and applying the azo pigment in the binder resin.

Next, a charge transport layer 994 is formed by dispersing and applying a hydrazone derivative to a binder resin.

Finally, the cathode electrode 99 is made of aluminum.
6, and the photodiode 997 is completed.

The structure of the photodiode is not limited to this. It is not always necessary to set the charge injection barrier layer and the charge transport layer.

Further, the anode electrode, the cathode electrode, the charge injection barrier layer, the charge generation layer, the charge transport layer and the like are not limited to the above-mentioned materials, and any known materials can be used freely.

As compared with a photodiode using an inorganic substance such as a semiconductor, a photodiode using an organic substance has advantages in that a photodiode having a large area can be manufactured, flexibility is excellent, and workability is excellent.

This embodiment can be implemented by freely combining with Embodiments 1 to 6.

[Embodiment 8] In this embodiment, electronic equipment to which the information device of the present invention is applied will be described. Examples of application of the information device of the present invention include a portable information terminal (PDA, mobile phone, electronic book, or the like).

FIG. 15A is a schematic diagram of a PDA.
Display / input unit 1901, input pen 1902, operation keys 1903, external connection port 1904, and power switch 1
905. The information device of the present invention can be used for a display / input unit 1901 of a PDA.

[0278] FIG. 15B is a schematic diagram of an electronic book. A display / input unit 1911, an input pen 1912, operation keys 1913, and a recording medium 1914 are provided. The information device of the present invention can be used for a display / input unit 1911 of an electronic book.

FIGS. 21A and 21B show an example in which the information device of the present invention is applied to a portable information terminal having a function of personal authentication.

Here, the personal authentication work is a function of comparing information registered in advance with information input thereafter to determine whether or not the two pieces of information indicate the same person. Let's say

FIG. 21A shows a portable information terminal 2183. This portable information terminal 2183 has an input pen 2181,
A display / input unit 2184, operation keys 2185, an external connection port 2186, a power switch 2187, and the like are provided.

As shown in Embodiment 4, the palm print is read by placing the hand 2188 on the display / input unit 2184 by using the display / input unit 2184 as an image sensor.

An authentication operation can be performed using the read palm print as information for identifying an individual (personal information).

[0284] The personal information used for the authentication work is not limited to the palm print, and biometric information such as a fingerprint can be used freely.

[0285] These personal information for authentication can be freely combined and used.

FIG. 21B shows a portable information device having the same configuration as that shown in FIG. 21A, but a case where personal authentication is performed by a different method will be described.

Here, the information of the handwriting 2191 input to the display unit / input unit 2184 by the input pen 2181 is used for the authentication work.

It is to be noted that personal information such as handwriting input by pen input and personal information such as palm prints and fingerprints input by the image sensor can be freely combined into a portable information terminal for personal identification work. It can also be applied.

The applicable range of the present invention is extremely wide, and can be applied to electronic devices in all fields. Further, the electronic apparatus according to the present embodiment can be realized by using any combination of the embodiments 1 to 7.

According to the conventional information device having a resistive film type or an optical type pen input function, the visibility of an image, the durability of the device,
There were problems such as accuracy, miniaturization, and power consumption.

In the information device having a pen input function according to the present invention, both an EL element and a photoelectric conversion element are arranged in pixels of a display device, and light is input to the photoelectric conversion element by a pen that reflects light at a pen tip. To input information. As a result, an information device which does not impair the brightness of the display image, displays a clear image, has excellent durability, can be miniaturized, has high accuracy, and has a pen input function can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of an information device of the present invention.

FIG. 2 is a schematic diagram of an upper surface and a cross section of the optical sensor of the present invention.

FIG. 3 is a circuit diagram of a pixel portion of a display panel with an image sensor of the information device of the present invention.

FIG. 4 is a cross-sectional view of the information device of the present invention.

FIG. 5 is a cross-sectional view of the information device of the present invention.

FIG. 6 is a top view and a cross-sectional view of an information device of the present invention.

FIG. 7 is a diagram showing a structure of a conventional resistive film type pen input device.

FIG. 8 is a diagram showing the structure of a conventional resistive film type pen input device.

FIG. 9 is a diagram showing a structure of a conventional optical pen input device.

FIG. 10 illustrates a manufacturing process of an information device of the present invention.

FIG. 11 illustrates a manufacturing process of an information device of the present invention.

FIG. 12 illustrates a manufacturing process of an information device of the present invention.

FIG. 13 illustrates a manufacturing process of an information device of the present invention.

FIG. 14 illustrates a manufacturing process of an information device of the present invention.

FIG. 15 is a diagram of an electronic device to which the information device of the present invention is applied.

FIG. 16 is a diagram showing a timing chart of driving of the information device of the present invention.

FIG. 17 is a diagram showing a timing chart for driving the information device of the present invention.

FIG. 18 is a diagram showing a timing chart of driving of the information device of the present invention.

FIG. 19 illustrates a structure of a photoelectric conversion element of an information device of the present invention.

FIG. 20 is a cross-sectional view of the information device of the present invention.

FIG. 21 is a diagram of an electronic device to which the information device of the present invention is applied.

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Claims (17)

[Claims] A plurality of pixels arranged in a matrix, each of the plurality of pixels including an EL element and a photoelectric conversion element, wherein the EL element and the photoelectric conversion element are on the same substrate; An information device formed in the device, wherein: an input pen for reflecting the light emitted by the EL element and inputting the light to the photoelectric conversion elements of some of the plurality of pixels; An information device comprising: a unit configured to detect coordinates of some of the pixels. A plurality of pixels arranged in a matrix, each of the plurality of pixels including an EL element and a photoelectric conversion element, wherein the EL element and the photoelectric conversion element are on a same substrate; An information device formed in the device, wherein: an input pen for reflecting the light emitted by the EL element and inputting the light to the photoelectric conversion elements of some of the plurality of pixels; An information device comprising: a unit configured to detect an intensity of light emitted to the photoelectric conversion element. 3. The means according to claim 2, wherein each of said plurality of pixels has a selection TFT, a buffer TFT, and a reset TFT, and detects an intensity of light applied to said photoelectric conversion element. The plurality of sensor output wirings, the plurality of sensor gate signal lines, the plurality of reset gate signal lines, the plurality of sensor power lines, and the signals from the plurality of sensor output lines are input. A sensor source signal line drive circuit; and a sensor gate signal line driving circuit for outputting signals to the plurality of sensor gate signal lines and the plurality of reset gate signal lines; and a gate electrode of the selection TFT. Is connected to one of the plurality of sensor gate signal lines, and one of a source region and a drain region of the selection TFT is one of the plurality of sensor output lines. The other is connected to the source region of the buffer TFT, the drain region of the buffer TFT is connected to one of the plurality of sensor power lines, and the gate electrode of the buffer TFT Is connected to the source region or the drain region of the photodiode and the reset TFT, and the side of the source region or the drain region of the reset TFT that is not connected to the buffer TFT is
The information device according to claim 1, wherein the information terminal is connected to one of the plurality of sensor power supply lines, and a gate electrode of the reset TFT is connected to one of the plurality of reset gate signal lines. 4. The sensor source signal line driving circuit and the sensor gate signal line driving circuit according to claim 3, wherein the sensor signal line driving circuit and the sensor gate signal line driving circuit are formed on the same substrate as the substrate on which the EL element and the photoelectric conversion element are formed. An information device, comprising: 5. The pixel according to claim 2, wherein each of the plurality of pixels includes a switching TFT,
A means for causing the EL element to emit light, comprising: a plurality of EL display source signal lines; a plurality of EL display gate signal lines; a plurality of power supply lines; A source signal line driving circuit for EL display for outputting a signal to the source signal line for display, and a gate signal line driving circuit for EL display for outputting a signal to the plurality of gate signal lines for EL display, wherein the switching TFT Is connected to one of the plurality of EL display gate signal lines. One of the source region and the drain region of the switching TFT is one of the plurality of EL display source signal lines. And the other is connected to the EL driving TF
One of a source region and a drain region of the EL driving TFT is connected to one of the plurality of power supply lines, and the other is connected to the EL element. An information device, comprising: 6. The EL display source signal line driver circuit and the EL display gate signal line driver circuit according to claim 5, wherein the EL element and the photoelectric conversion element are formed on the same substrate. An information device characterized by being performed. 7. The information device according to claim 1, wherein the photoelectric conversion element is a photodiode. 8. The information device according to claim 7, wherein the photodiode has an anode electrode, a cathode electrode, and a photoelectric conversion layer sandwiched between the anode electrode and the cathode electrode. . 9. The information device according to claim 8, wherein the photoelectric conversion layer is made of an organic material. 10. The photodiode according to claim 7, wherein the photodiode has a p-type semiconductor layer, an n-type semiconductor layer, and a photoelectric conversion layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. An information device characterized by the above-mentioned. 11. The information device according to claim 8, wherein the photoelectric conversion layer is made of an amorphous semiconductor. 12. The photoelectric conversion element according to claim 1, wherein light emitted from the EL element is radiated to a surface of a subject, and light reflected by the surface of the subject is reflected by the photoelectric conversion element. An information device, comprising: means for inputting information to a computer. 13. The information device according to claim 12, wherein the information on the surface of the subject is biological information. 14. The information device according to claim 13, wherein the biological information is a palm print. 15. The information device according to claim 13, wherein the biological information is a fingerprint. 16. The information device according to claim 1, wherein the information device is a portable information terminal. 17. The information device according to claim 1, wherein the information device is a PDA.