CN101609266B - Field measurement device of wave aberration of projection objective in photo-etching machine - Google Patents
Field measurement device of wave aberration of projection objective in photo-etching machine Download PDFInfo
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- CN101609266B CN101609266B CN2009100894268A CN200910089426A CN101609266B CN 101609266 B CN101609266 B CN 101609266B CN 2009100894268 A CN2009100894268 A CN 2009100894268A CN 200910089426 A CN200910089426 A CN 200910089426A CN 101609266 B CN101609266 B CN 101609266B
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Abstract
The invention relates to a field measurement device of wave aberration of a projection objective in a photo-etching machine. The device is based on the shack-hart mann measurement principle, and comprises a host machine and a standard lens, wherein the host machine comprises a photoelectric sensor, a diffraction optical element, a collimator objective, a pinhole maskplate provided with a round hole, and a beam splitting device used for controlling light path transmission; the standard lens includes a first standard lens used for folding back light path when in systematic error of the demarcated host machine, and a second standard lens used for folding back the light path when the wave aberration of the projection objective is measured by the host machine. The host machine and the first standard lens are integrated on a reticle mask stage of the photo-etching machine, and the second standard lens is integrated on a silicon chip stage; when in measurement, the silicon chip stage and the reticle mask stage are moved to the measuring position for measuring and correcting the wave aberration of full view field of the projection objective in the photo-etching machine. The field measurement device has higher absolute measuring accuracy, is suitable for the field measurement of the wave aberration of the projection objective in the photo-etching machine, reduces the cost, the volume and the weight of the device, and is convenient for integration.
Description
Technical field
The present invention relates to a kind of the optical property of projection optical system be carried out the device of in-site measurement, particularly a kind of field measurement apparatus of wave aberration of photo-etching machine projection objective belongs to field of optical measuring technologies.
Background technology
In the preparation process of large scale integrated circuit, use the litho machine of band projection aligner that the pattern on the mask is being scribbled on the silicon chip of photoresist through the projection objective reduced projection usually.At present, the mainstream technology of lithographic equipment---ArF photoetching technique has developed into the following technology node of 65nm, in order to satisfy the requirement of low process factor ArF photoetching technique characteristic dimension control, the wave aberration of high-NA projection objective system will be controlled at 10m λ rms (in the λ=193nm) usually.Under this wave aberration tolerance limit, aberration is very high to the susceptibility of surrounding environment, and high-order aberrations such as the thermic aberration that the heat during exposure caused must compensate.And along with the increase of projection objective numerical aperture, Polarization aberration becomes more and more obvious to the influence of lithography performance.So, the detection of the ArF projection lens of lithography machine system wave aberration of the following technology node of 65nm must utilize the exposure light source and the illuminator of litho machine self, and by integrated wave aberration measurement mechanism on litho machine, carry out quick, high-precision full visual field wave aberration in-site measurement and correction, requirement can detect the emergent pupil wave aberration that at least 37 Zernike multinomial coefficients are represented.
The projection lens of lithography machine system generally includes the light source 101 that is used to produce projected light beam; Be used to adjust the light beam partial coherence factor that light source sends and the illuminator 102 of polarization state; Mask pattern can be imaged on the projection objective 105 on the silicon chip 106; Can carry described mask 103 and pinpoint mask platform 104; Can described silicon chip 106 of carrying and pinpoint silicon chip platform 107.Structure as shown in Figure 1.
Traditional aberration measurement technology based on the development graphical measurement can only detect a certain or several aberrations, and it is consuming time longer, there is the systematic error that is difficult to proofread and correct in method of testing, its accuracy of detection generally only can reach the level of 10m λ rms, can not satisfy the requirement of the following technology node photoetching technique of 65nm.
U.S. Pat 6914665 and US6975387 propose, and by integrated wave aberration measurement mechanism based on Shack-Hartmann image-position sensor principle on photo-etching machine silicon chip platform, carry out the wave aberration of projection lens of lithography machine and measure and proofread and correct.And document " Portable phase measuring interferometer usingShack-Hartmann method " (Proc.SPIE, 2003,5038:726～732) wave aberration measurement and the systematic error scaling method to this device carried out detailed argumentation, the document is pointed out, utilize this measurement mechanism that the experimental result of KrF litho machine is shown, the measuring accuracy of this device can reach 2.2m λ rms (λ=248nm).But, along with the increase of dry lithography machine projection objective numerical aperture, and even develop into the liquid immersion lithography projection objective, measure with said apparatus and will have following problem this moment:
1) the Shack-Hartmann image-position sensor requires the incident parallel beam, therefore the high-NA collimating mirror that need be complementary with projection objective numerical aperture to be measured, the increase of projection objective numerical aperture must cause the bore of collimator objective and sheet number to increase, make cost increase, device volume increases, and is not easy to integrated;
2) main frame of this device is integrated in the silicon chip platform, measures for the wave aberration of liquid immersion lithography projection objective, needs the collimator objective of immersion, and the engineering difficulty that measuring position and exposure position switch increases;
3) this device utilizes the pin hole on the mask platform to select measurement visual field point and filtering to eliminate the corrugated error of illuminator, and this device need depart from the pin hole before the collimator objective projection objective image planes at the systematic error timing signal, carry out filtering once more to produce the systematic error that spherical wave comes the calibration measurements device, make the transmitance of system reduce through twice filtering, numerical aperture increase along with projection objective, pinhole size is more and more littler, make transmitance further reduce, will influence measuring accuracy.
Summary of the invention
The objective of the invention is to propose a kind of field measurement apparatus of wave aberration of photo-etching machine projection objective in order to realize the in-site measurement of projection objective wave aberration.This device can detect the emergent pupil wave aberration that at least 37 Zernike multinomial coefficients are represented, and is applicable to the wave aberration measurement of immersion projection objective.
The design concept of apparatus of the present invention is: integrated projection objective wave aberration measurement mechanism based on shack-hartmann image-position sensor principle in the litho machine system is used for the measurement of projection objective wave aberration.Described measurement mechanism is simple in structure and be easy to integratedly, and main frame is integrated on the mask platform of litho machine, and individual component is integrated on the silicon chip platform.During measurement, mask platform and silicon chip platform are moved to the measuring position of described device, can carry out the measurement and the correction of the full visual field of projection lens of lithography machine wave aberration.This device has the systematic error calibrating function, to reach higher wave aberration absolute measurement precision.
The invention provides a kind of field measurement apparatus that is used for wave aberration of photo-etching machine projection objective, this installs based on the Shack-Hartmann measuring principle, comprises main frame and standard mirror two big ingredients.
Described host machine part comprises: (1) is used for the photoelectric sensor of probing wave facial disfigurement.(2) be used for the diffraction optical element of wave-front division.(3) be used for the collimator objective of beam shaping.(4) be used to select to measure the pinhole mask plate of visual field point and filtering illuminator aberration, a circular hole arranged on it, the function of circular hole be select to measure the visual field point, illumination beam is carried out spatial filtering, to eliminate the illuminator aberration and to increase the outgoing beam angle.The diameter of circular hole is not more than the resolution of projection objective object space diffraction limit.(5) be used to control the beam splitter of optic path.
The standard mirror partly comprises: (6) be used to turn back when demarcating the systematic error of main frame first standard mirror of light path.(7) when main frame is measured projection objective wave aberration, be used to the to turn back second standard mirror of light path.
Position relation between above-mentioned building block is as follows:
Host machine part is done as a whole, is fixed in any side of mask platform in the litho machine.In the inside of main frame, the position at mask place when the pinhole mask plate is positioned at photo-etching machine exposal, and the outgoing beam of illuminator can be through the circular hole on the pinhole mask plate, and the circular hole position of pinhole mask plate is selected measurement visual field point.
Beam splitter is positioned at the rear of pinhole mask plate, and a reflecting surface is arranged in the beam splitter, the primary optical axis of reflecting surface and projection objective angle at 45.When demarcating the systematic error of main frame, reflecting surface towards making the light beam of turning back back can reflex on the collimator objective through the first standard mirror; When main frame is measured projection objective wave aberration, reflecting surface towards making the light beam of turning back back to reflex on the collimator objective through the second standard mirror.
Collimator objective is positioned at the side of beam splitter, and the circular hole center of circle of its focus in object space position and pinhole mask plate is about the reflecting surface conjugation of beam splitter, and simultaneously, the object space numerical aperture of collimator objective is not less than the object space numerical aperture of projection objective.The entrance pupil size of collimator objective is not less than projection objective entrance pupil size, and both sizes preferably equate; The entrance pupil position of collimator objective and the entrance pupil position of projection objective are approaching more good more, and the two position preferably overlaps.
Diffraction optical element is positioned at the picture side of collimator objective.Effective transparent zone territory of diffraction optical element is not less than the emergent pupil size of collimator objective, and both sizes preferably equate; The position of diffraction optical element and the exit pupil position of collimator objective are approaching more good more, and the two position preferably overlaps.
Photoelectric sensor is positioned on the focal plane of diffraction optical element light beam exit direction, and effective pixel zone of photoelectric sensor is not less than effective transparent zone territory of diffraction optical element.
Main frame makes mask platform can drive main frame as any side of overall fixed mask platform in the litho machine system, guarantees that the circular hole of pinhole mask plate in the main frame can move in the whole true field scope of projection objective.
When demarcating the systematic error of main frame, the first standard mirror is positioned at the rear of beam splitter, the reflector curvature center of the first standard mirror will overlap with the center of circle of circular hole on the pinhole mask plate, and overlaps with the focus in object space of collimator objective through the formed focus of beam splitter reflection face through the light that the first standard mirror is turned back back;
When main frame was measured projection objective wave aberration, the second standard mirror was fixed on any side of silicon chip platform.At this moment, place projection objective between standard mirror and the beam splitter, the center of circle of circular hole overlaps via the formed picture point of projection objective on the reflector curvature center of standard mirror and the pinhole mask plate.
The step that use apparatus of the present invention are carried out the wave aberration measurement is as follows:
At first, be equipped with on the litho machine of apparatus of the present invention, regulating the partial coherence factor and the polarization state of illuminator, illuminating bundle is evenly thrown light on the plane of mask.Then, the systematic error of carrying out described device is demarcated.Afterwards, utilize described device to carry out the in-site measurement of projection objective wave aberration,, utilize described device to carry out the in-site measurement of a plurality of visual field point wave aberrations of described projection objective by moving the measuring position of described mask platform and silicon chip platform.Calculate the adjustment amount of each compensator in described wave aberration measurement mechanism systematic error, described projection objective full visual field wave aberration and the described projection objective according to measurement data, according to result of calculation, each compensator of adjusting described projection objective is finished the aberration correction of described projection objective automatically.
Beneficial effect
With respect to U.S. Pat 6914665 and US6975387, and the measurement mechanism that proposed of pertinent literature (Proc.SPIE, 2003,5038:726～732), the present invention has following advantage:
1) because the industrialization projection lens of lithography machine is generally 4～5 times of reduced projection, therefore projection objective is generally 4～5 times of its object space numerical aperture as number formulary value aperture, in existing device, just require the object space numerical aperture of collimator objective to be not less than the picture number formulary value aperture of projection objective.And in apparatus of the present invention, only require that the object space numerical aperture of collimator objective is not less than the object space numerical aperture of projection objective, compare that the object space numerical aperture of collimator objective has been dwindled 4～5 times with existing apparatus, reduced cost, the volume and weight of measurement mechanism thus, be convenient to integrated.
2) carry out the systematic error timing signal, this device all is fixed on mask platform; When carrying out the projection objective wave aberration measurement, host machine part is fixed on mask platform, and the second standard mirror is fixed on the silicon chip platform.This makes apparatus of the present invention be convenient to be integrated among the litho machine system, is well suited for the in-site measurement of wave aberration of photo-etching machine projection objective, is particularly useful for the wave aberration in-site measurement of immersion projection objective.
3) this device employing standard mirror comes function of calibrating systematic error by absolute measurement, so the absolute precision of this device depends on the face shape error of standard mirror itself.Because processing of existing spherical mirror and absolute inspection technology can access the very high standard mirror of precision, so this device can have higher absolute measurement precision, and the measuring accuracy influence that not increased by the projection lens of lithography machine numerical aperture.
Description of drawings
Fig. 1 is the structural representation of the existing litho machine of foundation system;
Fig. 2 demarcates synoptic diagram according to the systematic error of the wave aberration field measurement apparatus of the embodiment of the invention;
Fig. 3 is the wave aberration in-site measurement synoptic diagram according to the wave aberration field measurement apparatus of the embodiment of the invention.
Wherein, 101-light source, 102-illuminator, 103-mask, 104-mask platform, 105-projection objective, 106-silicon chip, 107-silicon chip platform;
The 201-main frame comprises 201a-photoelectric sensor, 201b-diffraction optical element, 201c-collimator objective, 201d-pinhole mask plate, 201e-beam splitter; The 202a-first standard mirror, the 202b-second standard mirror.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
At first introduce the litho machine system, its composition frame chart comprises as shown in Figure 1: light source 101, illuminator 102, mask 103, mask platform 104, projection objective 105, silicon chip 106 and silicon chip platform 107.
The principle of work of litho machine is as follows: the light that light source 101 sends is through after the illuminator 102, be radiated on the mask 103, the pattern on the mask 103 passed through projection objective 105, in " stepping-scanning " mode, reduced projection is on the silicon chip 106 that scribbles photoresist, thus the transfer of realization pattern.Wherein, light source 101 is a quasi-molecule laser source, is about the ArF excimer laser of 193nm or the KrF excimer laser that wavelength is about 248nm as wavelength.Illuminator 102 is for having the optical component of regulating illuminating bundle partial coherence factor and light polarization.Be carved with the mask 103 of circuit pattern to be transferred, it is supported and is driven by mask platform 104.The silicon chip 106 that scribbles photoresist is supported and is driven by silicon chip platform 107.Mask 103 and silicon chip 106 are positioned on the optical conjugate face of projection objective 105.Mask platform 104 and silicon chip platform 107 be with different synchronization of rate scanning motions, by the pattern of " stepping-scanning " mode with mask 103, by projection objective 105 accurately projection transfer on the silicon chip 107 that scribbles photoresist.The wave aberration of projection objective 105, particularly senior aberration wherein can have a strong impact on the control accuracy of the pattern characteristics size of transfer.
Wave aberration field measurement apparatus in this concrete real-time mode comprises main frame 201 and standard mirror 202.Wherein, main frame 201 comprises: be used for the photoelectric sensor 201a of probing wave facial disfigurement, as CCD; The diffraction optical element 201b that is used for wave-front division is as micro mirror array or microwell array; The collimator objective 201c that is used for beam shaping; Be used to select to measure the pinhole mask plate 201d of visual field point and filtering illuminator aberration, there is circular hole at its center, the function of circular hole is to select measurement visual field point, illumination beam to carry out spatial filtering, to eliminate the illuminator aberration and to increase the outgoing beam angle, pinhole mask plate 201d can adopt the chrome mask plate that is carved with circular hole; Be used to control the beam splitter 201e of optic path, as beam splitter.
Standard mirror 202 parts comprise: the first standard mirror 202a of the light path that is used to turn back when demarcating the systematic error of main frame 201; The second standard mirror 202b of light path is used to turn back when main frame 201 is measured projection objectives 105 wave aberrations.The first standard mirror 202a and the second standard mirror 202b can adopt any one in concave mirror or the convex reflecting mirror.
Apparatus structure when demarcating the systematic error of main frame 201 is formed as shown in Figure 2, and the apparatus structure when main frame 201 is measured projection objective 105 wave aberrations is formed as shown in Figure 3.
Position relation between above-mentioned building block is as follows:
Inside at main frame 201, the position at mask 103 places when pinhole mask plate 201d is positioned at photo-etching machine exposal, and the outgoing beam of illuminator 102 can be through the circular hole on the pinhole mask plate 201d, and the circular hole position of pinhole mask plate 201d is selected measurement visual field point.
Diffraction optical element 201b is positioned at the picture side of collimator objective 201c.Effective transparent zone territory of diffraction optical element 201b is not less than the emergent pupil size of collimator objective 201c, and both sizes preferably equate; The exit pupil position of the position of diffraction optical element 201b and collimator objective 201c is approaching more good more, and the two position preferably overlaps.
When demarcating the systematic error of main frame 201, the first standard mirror 202a is positioned at the rear of beam splitter 201e, the reflector curvature center of the first standard mirror 202a will upward overlap in the center of circle of circular hole with pinhole mask plate 201d, and overlaps with the focus in object space of collimator objective 201c through the formed focus of beam splitter 201e reflecting surface through the light that the first standard mirror 202a turns back back;
When main frame 201 was measured projection objective 105 wave aberrations, the second standard mirror 202b was fixed on any side of silicon chip platform 105.At this moment, place projection objective between standard mirror and the beam splitter, the center of circle of circular hole overlaps via the formed picture point of projection objective on the reflector curvature center of standard mirror and the pinhole mask plate.
It is as follows to adopt this device to carry out the process of full visual field test:
Step 1, illuminator 102 have the function of regulating illuminating bundle partial coherence factor and polarization state, and the light beam that light source 101 sends at first passes through illuminator 102 shapings, and light beam is evenly thrown light in the plane at mask 103 places.Mobile mask platform 104 drives main frame 201, makes pinhole mask plate 201d be positioned at plane, mask 103 place, the i.e. object plane of projection objective 105.The outgoing beam of illuminator 102 is radiated on the pinhole mask plate 201d, and the circular hole on the process pinhole mask plate 201d carries out filtering, to eliminate the aberration of illuminator 102, and circular hole diffraction increases the angle of outgoing beam, and the position at the circular hole place of pinhole mask plate 201d is selected measurement visual field point.
Step 2, the systematic error of carrying out main frame 201 are demarcated: its light path as shown in Figure 2, the part of pinhole mask plate 201d outgoing beam incides the first standard mirror 202a surface after seeing through beam splitter 201e.Because the reflector curvature center of the first standard mirror 202a overlaps with the center of circle that pinhole mask plate 201d goes up circular hole, so light beam is turned back along original optical path by the first standard mirror 202a.After the reflecting surface reflection of beam splitter 201e, focus on the focus in object space of collimator objective 201c through light beam that the first standard mirror 202a turns back.After light beam is collimated into parallel beam by collimator objective 201c, be divided into a plurality of wavelets by diffraction optical element 201b, each wavelet focuses on photoelectric sensor 201a, and photoelectric sensor 201a writes down the focus centroid position of each wavelet, and with these positions as systematic error calibration result w
sSystematic error is demarcated only to be needed to demarcate once when mounted.
Step 3, measurement projection objective 105 wave aberrations: the second standard mirror 202b is fixed to silicon chip platform 107 sides, as shown in Figure 3.The part of pinhole mask plate 201d outgoing beam incides projection objective 105, in the picture point of the square one-tenth pinhole mask of the picture plate 201d of projection objective 105 circular hole after seeing through beam splitter 201e.At this moment, mobile silicon chip platform 107 makes that circular hole is overlapped by the picture point that projection objective 105 forms among the center of curvature and the pinhole mask plate 201d of reflecting surface of the second standard mirror 202b, and therefore, light beam can be turned back along original optical path by the second standard mirror 202b.Behind the light beam process projection objective 105 that the second standard mirror 202b turns back,, focus on the focus in object space of collimator objective 201c again through the reflecting surface reflection of beam splitter 201e.Light beam is divided into a plurality of wavelets by diffraction optical element 201b after being collimated into parallel beam by collimator objective 201c.Each wavelet focuses on photoelectric sensor 201a, and photoelectric sensor 201a writes down the focus centroid position of each wavelet, and with the visual field point not proven wave aberration measurement result w of these positions as pinhole mask plate 201d circular hole position "
1
Step 4, carry out the wave aberration in-site measurement of projection objective 105 full visual fields:
According to the wave aberration measuring position of predefined projection objective 105, adjust the measuring position of mask platform 104 and this device of silicon chip platform 107 translations the switching, thereby measure the wave aberration of visual field points different on the projection objective 105.The measurement of each visual field point is carried out the single-point wave aberration and is measured all according to the described process of step 3, until the measurement of finishing projection objective 105 full visual field wave aberrations, finally obtains the not proven wave aberration measurement result of all visual field points w "
n(n=1,2,3 ...).
Step 5, at first is according to the systematic error calibration result w that obtains through step 2
s, calculate the systematic error W of the device that 37 Zernike multinomial coefficients represent
SysSimultaneously, according to the not proven wave aberration in-site measurement of all visual field points that obtain through step 4 w as a result "
n(n=1,2,3 ...), calculate the projection objective 105 complete not proven wave aberration V in visual field that 37 Zernike multinomial coefficients are represented "
n(n=1,2,3 ...).
Afterwards, according to systematic error W
SysWith the projection objective 105 complete not proven wave aberration V in visual field "
n(n=1,2,3 ...) come function of calibrating systematic error, the calibrated projection objective 105 full visual field wave aberration W of systematic error
n=V "
n-W
Sys, (n=1,2,3 ...).
Just finished the in-site measurement of wave aberration of photo-etching machine projection objective since then.
Then, according to projection objective 105 full visual field wave aberration W
n, utilize the susceptibility matrix of predefined projection objective 105, calculate the regulated quantity of predefined each compensator in the projection objective 105.The regulated quantity result of calculation of each compensator that obtains according to step 5 is adjusted each compensator in the projection objective 105 again, just can finish the wave aberration correction of projection objective 105.
Described the specific embodiment of the present invention though combine accompanying drawing, to those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also make some distortion and improvement, these also should be considered as belonging to protection scope of the present invention.
Claims (2)
1. the field measurement apparatus of a wave aberration of photo-etching machine projection objective comprises main frame (201) and standard mirror two big ingredients; Described main frame (201) comprises the photoelectric sensor (201a) that is used for the probing wave facial disfigurement, the diffraction optical element (201b) that is used for wave-front division, the collimator objective (201c) that is used for beam shaping, be used to select to measure the pinhole mask plate (201d) of visual field point and filtering illuminator aberration, on the pinhole mask plate (201d) circular hole arranged;
It is characterized in that:
Main frame (201) also comprises the beam splitter (201e) that is used to control optic path;
Standard mirror (202) comprising: the first standard mirror (202a) of the light path that is used to turn back when demarcating the systematic error of main frame (201); The second standard mirror (202b) of light path is used to turn back when main frame (201) is measured projection objective (105) wave aberration;
Position and annexation between above-mentioned building block are as follows:
In main frame (201) inside, pinhole mask plate (201d) is positioned at the rear of illuminator (102), the position at mask when being photo-etching machine exposal (103) place, and the outgoing beam of illuminator (102) can be through the circular hole on the pinhole mask plate (201d), and the circular hole position of pinhole mask plate (201d) is selected measurement visual field point;
Beam splitter (201e) is positioned at the rear of pinhole mask plate (201d), in the beam splitter (201e) reflecting surface is arranged, the primary optical axis angle at 45 of reflecting surface and projection objective (105); When demarcating the systematic error of main frame (201), reflecting surface towards making the light beam of turning back back can reflex on the collimator objective (201c) through the first standard mirror (202a); When main frame (201) is measured projection objective (105) wave aberration, reflecting surface towards making the light beam of turning back back can reflex on the collimator objective (201c) through the second standard mirror (202b);
Collimator objective (201c) is positioned at the side of beam splitter (201e), the circular hole center of circle of the focus in object space position of collimator objective (201c) and pinhole mask plate (201d) is about beam splitter (201e) reflecting surface conjugation, simultaneously, the object space numerical aperture of collimator objective (201c) equates with the object space numerical aperture of projection objective (105), simultaneously, the entrance pupil size of collimator objective (201c) equals projection objective (105) entrance pupil size, and the entrance pupil position of collimator objective (201c) overlaps with entrance pupil (105) position of projection objective;
Diffraction optical element (201b) is positioned at the picture side of collimator objective (201c); Effective transparent zone territory of diffraction optical element (201b) equals the emergent pupil size of collimator objective (201c), and the position of diffraction optical element (201b) overlaps with the exit pupil position of collimator objective (201c);
Photoelectric sensing (201a) is positioned on the focal plane of diffraction optical element (201b) light beam exit direction, and effective pixel zone of photoelectric sensor (201a) is not less than effective transparent zone territory of diffraction optical element (201b);
Main frame (201) is as any side of overall fixed mask platform (104) in the litho machine system, make mask platform (104) can drive main frame (201), guarantee that the circular hole of pinhole mask plate (201d) in the main frame (201) can move in the whole true field scope of projection objective (105);
When demarcating the systematic error of main frame (201), the first standard mirror (202a) is positioned at the rear of beam splitter (201e), the reflector curvature center of the first standard mirror (202a) will upward overlap in the center of circle of circular hole with pinhole mask plate (201d), and overlaps with the focus in object space of collimator objective (201c) through the formed focus of beam splitter (201e) reflecting surface through the light that the first standard mirror (202a) is turned back back;
When main frame (201) is measured projection objective (105) wave aberration, the second standard mirror (202b) is fixed on any side of silicon chip platform (105), at this moment, place projection objective between the second standard mirror and the beam splitter, the center of circle of circular hole overlaps via the formed picture point of projection objective on the reflector curvature center of the second standard mirror and the pinhole mask plate.
2. the field measurement apparatus of the described wave aberration of photo-etching machine projection objective of employing claim 1 carries out the method for wave aberration of photo-etching machine projection objective measurement of full field, comprises following process:
The light beam that step 1, light source (101) send at first passes through illuminator (102) shaping, light beam is evenly thrown light in the plane at mask (103) place, mobile mask platform (104) drives main frame (201), make pinhole mask plate (201d) be positioned at mask (103) plane, place, the i.e. object plane of projection objective (105); The outgoing beam of illuminator (102) is radiated on the pinhole mask plate (201d), and carries out filtering through the circular hole on the pinhole mask plate (201d), and the position at the circular hole place of pinhole mask plate (201d) is selected measurement visual field point;
Step 2, the systematic error of carrying out main frame (201) are demarcated:
The part of pinhole mask plate (201d) outgoing beam incides first standard mirror (202a) surface after seeing through beam splitter (201e); Light beam is turned back along original optical path by the first standard mirror (202a), after the reflecting surface reflection of beam splitter (201e), focuses on the focus in object space of collimator objective (201c) through light beam that the first standard mirror (202a) is turned back; After light beam is collimated into parallel beam by collimator objective (201c), (201b) is divided into a plurality of wavelets by diffraction optical element, each wavelet focuses on photoelectric sensor (201a), photoelectric sensor (201a) writes down the focus centroid position of each wavelet, and with these positions as systematic error calibration result w
s, systematic error is demarcated only to be needed to demarcate once when mounted;
Step 3, measurement projection objective (105) wave aberration: the second standard mirror (202b) is fixed to silicon chip platform (107) side, after the part of pinhole mask plate (201d) outgoing beam sees through beam splitter (201e), incide projection objective (105), in the picture point of the square one-tenth pinhole mask of the picture plate 201d of projection objective (105) circular hole; At this moment, mobile silicon chip platform (107) makes the center of curvature of the reflecting surface of the second standard mirror (202b) be overlapped by the picture point that projection objective (105) forms with the middle circular hole of pinhole mask plate (201d), and light beam can be turned back along original optical path by the second standard mirror (202b); Behind the light beam process projection objective (105) that the second standard mirror (202b) is turned back, pass through the reflecting surface reflection of beam splitter (201e) again, focus on the focus in object space of collimator objective (201c); After light beam is collimated into parallel beam by collimator objective (201c), (201b) is divided into a plurality of wavelets by diffraction optical element, each wavelet focuses on photoelectric sensor (201a), photoelectric sensor (201a) writes down the focus centroid position of each wavelet, and with the visual field point not proven wave aberration measurement result w of these positions as pinhole mask plate (201d) circular hole position "
1
Step 4, carry out the wave aberration in-site measurement of the full visual field of projection objective (105):
According to the wave aberration measuring position of predefined projection objective (105), adjust the measuring position that this device is switched in mask platform (104) and silicon chip platform (107) translation, thereby measure the wave aberration that projection objective (105) is gone up different visual field points; The measurement of each visual field point is carried out the single-point wave aberration and is measured all according to the described process of step 3, and the measurement until finishing the full visual field of projection objective (105) wave aberration finally obtains the not proven wave aberration measurement result of all visual field points w "
n(n=1,2,3 ...);
Step 5, at first is according to the systematic error calibration result w that obtains through step 2
s, calculate the systematic error W of the device that 37 Zernike multinomial coefficients represent
SysSimultaneously, according to the not proven wave aberration in-site measurement of all visual field points that obtain through step 4 w as a result "
n(n=1,2,3 ...), calculate the complete not proven wave aberration V in visual field of projection objective (105) that 37 Zernike multinomial coefficients are represented "
n(n=1,2,3 ...);
Afterwards, according to systematic error W
SysAnd the complete not proven wave aberration V in visual field of projection objective (105) "
n(n=1,2,3 ...) coming function of calibrating systematic error, the calibrated projection objective of systematic error (105) is visual field wave aberration W entirely
n=V "
n-W
Sys, (n=1,2,3 ...);
So far, just finished the in-site measurement of wave aberration of photo-etching machine projection objective.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100894268A CN101609266B (en) | 2009-07-20 | 2009-07-20 | Field measurement device of wave aberration of projection objective in photo-etching machine |
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| CN101840164B (en) * | 2010-05-13 | 2011-12-14 | 北京理工大学 | Photoetching machine projection objective wave aberration on-line detector and method |
| CN102261985B (en) * | 2011-06-13 | 2012-12-12 | 中国科学院长春光学精密机械与物理研究所 | Optical system wave aberration calibration apparatus and calibration method of using apparatus to test error |
| US9046791B2 (en) | 2011-11-30 | 2015-06-02 | Changchun Institute Of Optics, Fine Mechanics And Physics, Chinese Academy Of Sciences | Apparatuses and methods for detecting wave front abberation of projection objective system in photolithography machine |
| JP6462705B2 (en) * | 2014-09-25 | 2019-01-30 | シチズン時計株式会社 | Phase modulation device and laser microscope |
| CN106895963B (en) * | 2017-04-09 | 2024-01-26 | 南京东利来光电实业有限责任公司 | Device and method for detecting large numerical aperture immersion oil lens |
| JP6701458B2 (en) * | 2017-12-26 | 2020-05-27 | 三菱電機株式会社 | Light pattern generator |
| CN109581827B (en) * | 2019-01-10 | 2020-06-09 | 中国科学院光电技术研究所 | Photoetching projection objective lens optimal focal plane detection device and method |
| CN111751086B (en) * | 2019-03-29 | 2021-09-28 | 上海微电子装备（集团）股份有限公司 | Objective lens parameter measuring device |
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