CN100480864C - Lithographic apparatus and device manufacturing method - Google Patents

Abstract

One or more patterning arrays are mounted to a mounting plate via height adjustment structures that enable the flatness of the active surfaces of the patterning arrays to be controlled. The height adjustment structures may comprise an array of piezoelectric actuators or screws. Alternatively, the backside of the patterning means may be polished to optical flatness and bonded by crystal bonding to an optically flat surface of a rigid mounting body.

Description

Lithographic equipment and device making method

The application be that September 21, application number in 2004 are 200410087446 the applying date, denomination of invention divides an application for the application of " lithographic equipment and device making method ".

Technical field

The present invention relates to a kind of lithographic equipment and a kind of device making method.

Background technology

Lithographic equipment is the equipment that applies the expection pattern in the target portion of substrate.For example, can be at integrated circuit (ICs), flat-panel monitor and other comprise in the manufacture process of device of fine structure and use lithographic equipment.In the lithographic equipment of routine; the composition array that also is called mask or marking-off plate can be used for producing the circuit pattern corresponding to the single layer of IC (or other device); this pattern (for example is imaged onto substrate; silicon wafer or glass sheet) on target portion (part that for example comprises one or several circuit small pieces (dies)) on, described substrate has radiation-sensitive materials (resist) layer.What replace mask is that described composition array can comprise the element arrays that can independently control that is used to produce circuit pattern.

Usually, single substrate will comprise the network of the adjacent target portion that is exposed in succession.Known lithographic equipment comprises so-called steeper (steppers), wherein each target portion of radiation by the whole patterns in the single exposure target portion; With so-called scanner, wherein by projecting beam along assigned direction (" scanning " direction) scan pattern successively, and simultaneously along and the parallel or antiparallel direction synchronous scanning of this direction substrate, and each target portion of radiation.

In using the conventional lithographic equipment of mask, comprehensive flatness of mask there is strict requirement, to avoid telecentric iris (telecentricity) error in bases.Use sizable coefficient of reduction (demagnification) M in maskless lithographic equipment, for example 200-400 coefficient of reduction in other words, uses the lithographic equipment of composition array to aggravate this problem.Overall situation nonflatness U, the nonflatness on just about 10 or the more a plurality of mirror period is converted into the telecentric iris error at wafer-level face place according to following formula:

TE＝2.M.U (1)

Therefore the overall nonflatness of 40urad is generally the overall nonflatness of composition array, compares with the standard specification of the 10mrad altogether that comprises lens and other mechanical influence, and it provides the telecentric iris error of 16-32mrad.

In addition, because the maskless lithography performance has increased, so the error margin in the exposure just reduces.The error that exists in exposure is optical aberration in exposure optics and the component tolerances in the exposure optics, and described optical aberration generally causes by making institute.In other exposure error, aberration can cause total focus to depart from.When just causing total focus to depart from when inequality in the All Ranges of focal length at exposing light beam of exposure optics.In this case, smooth composition array component can not focus on image plane or the wafer plane.When changing optical devices when revising this error, the degree of accuracy that the movement requirement of optical component is very big.Otherwise can occur the trouble in the other error drawing-in system.Needed is to reduce the system and method for aberration under the condition of other error not being introduced in the maskless system.

Summary of the invention

Be desirable to provide a kind of one or more composition arrays that are used to assemble, to reduce the device of composition array nonflatness.

According to one aspect of the present invention, a kind of lithographic equipment is provided, comprising:

Illuminator is used to provide the projecting beam of radiation;

The element composition array that can independently control is used for giving pattern on the projecting beam xsect;

Be equipped with the assembling slice of described composition array on it;

Height adjustable structure is used for the local height of adjusting the active surface of described composition array;

The base station that is used for support base; With

Projection system is used for patterned beam is projected the target portion of substrate.

According to another aspect of the present invention, a kind of lithographic equipment is provided, comprise;

Illuminator is used to provide the projecting beam of radiation;

The element composition array that can independently control is used for giving pattern on the projecting beam xsect;

The base station that is used for support base; With

Projection system is used for patterned beam is projected the target portion of substrate; Wherein

Described composition array comprises a plurality of active components that are arranged on the substrate first surface, and the second surface of the described substrate relative with described first surface is that optics is smooth; With the solid assembly building with optics flat surfaces, the second surface of described substrate is attached on the described rigid body.

According to another aspect of the present invention, a kind of device making method is provided, comprise the steps;

One substrate is provided, and described substrate is covered at least in part by radiation sensitive material layer;

The projecting beam of radiation is provided with radiating system;

On the described first projecting beam xsect, give its pattern with the composition array;

The patterning projecting beam of described radiation is projected in the target portion of radiation sensitive material layer and

In such a way described composition array is assembled on mounting plate or the rigid body: guarantee that promptly its active surface is smooth.

According to one side more of the present invention, revise total focus by the single composition array in the mobile composition array component and depart from.Replace all composition arrays of calibration so that it limits smooth composition array plane is that at least one composition array has the ability that departs from from flat surfaces.In one embodiment, each the composition array in the composition array component occupies primary importance.(be also referred to as image plane here) at the wafer plane place and receive data, to determine required correction adjustment.Determine that according to this each composition array in composition array component moves on to the second place from primary importance.Each composition array moves respectively, even have also few.This makes the composition array component depart from flat surfaces.

Mobile comprise inclination, the change height or crooked of single composition array from the primary importance to the second place.These changes realize by attaching to a regulator or one group of regulator of each composition array.In one embodiment, for their composition arrays are separately moved to the second place, regulator changes length.The seedbed can be arranged or do not have the seedbed controlled adjuster.The regulator of active control can comprise, for example piston.The regulator of Passive Shape Control can comprise that for example screw rod or screw can manually change its length.

After single composition array has been moved on to their second place, from the bright composition array component of the illumination of illuminator.The composition array component is by at least one optical system reflected light.Described light exposes the object at image plane place then.

Utilize the present invention, under the situation of lens in the optical system not being done the high precision adjustment, can reduce to depart from such aberration such as total focus.In addition, allow when tectonic system, to use less strict optical devices specification with composition array correction aberration.

Term used herein " the element composition array that can independently control " should broadly be interpreted as, and is used for giving any device in patterned cross section to the radiation laser beam of incident, so that produce the expection pattern in the target portion of substrate; Also use term " light valve " and " spatial light modulator " herein (SLM).The example of this composition array comprises;

Program control reflection mirror array.It comprises the matrix-addressable surface with viscoelasticity key-course and reflecting surface.The theoretical foundation of this device is that the addressed areas of (for example) reflecting surface reflects incident light as diffraction light, but not addressable area reflects incident light as and is non-diffracted light.With a suitable spatial filter, the described non-diffracted light of filtering from folded light beam only keeps diffraction light and arrives substrate; Like this, described light beam becomes patterning according to the addressing pattern of matrix-addressable surface.Should be appreciated that all right filtering diffraction light of described wave filter, keep non-diffracted light and arrive substrate.Also can use diffraction optics MEMS equipment array in the corresponding way.Each diffraction optics MEMS equipment all is made of a plurality of zones of reflections, and the described zone of reflections is out of shape toward each other, reflects incident light as the grating of diffraction light with formation.Another replacement type embodiment of program control reflection mirror array utilizes the arranged in matrix of tiny mirror, by applying suitable internal field, perhaps by using piezoelectric actuator device, makes each catoptron to tilt around an axle independently.Moreover catoptron is a matrix-addressable, and the catoptron of addressing reflexes on the unaddressed catoptron with the radiation laser beam of different directions with incident thus; So, the addressing pattern according to the matrix-addressable catoptron carries out composition to folded light beam.Can carry out required matrix addressing with suitable electronic installation.In above-mentioned two kinds of situations, the element arrays that can independently control comprises one or more program control reflection mirror array.The more information of reflection mirror array can be from for example U.S. Pat 5,296,891, US5, and 523,193, obtain among PCT patented claim WO 98/38597 and the WO98/33096, these documents here are incorporated herein as a reference.

Program control LCD array.For example by U.S. Pat 5,229, the 872 this structures that provide, the document here is incorporated herein as a reference.

Should be appreciated that, if utilized prebias, optical approximate alignment features, phase change technology and the multiple exposure technology of feature, so such as, the pattern of institute's " demonstration " just can be different substantially with the one deck of finally transferring to substrate or suprabasil pattern on the element arrays that can independently control.Similarly, the pattern that finally generates in substrate can not correspond to and is engraved in formed pattern on the element arrays that can independently control when arbitrary.This can be such a case: in a configuration, the final pattern that is formed on each part of substrate is to set up in the given time period or in the given exposure frequency, during this time period or exposure frequency, the element arrays that can independently control and/or the relative position of substrate change.

Although in this article, lithographic equipment of the present invention specifically is used to make IC, but should be appreciated that these devices may have other application, for example, can be used for making integrated optics system, be used for magnetic domain memory, the guiding of flat-panel monitor, thin-film head etc. and check pattern etc.It will be apparent to one skilled in the art that in these replacement type purposes scopes any use of term herein " wafer " or " circuit small pieces (die) " should be thought respectively and more common term " substrate " or " target portion " synonym.Here related substrate can handled in such as track (the common a kind of instrument that resist layer is applied to substrate and makes the resist development that has exposed) or measurement or checking tool before and after the exposure.In adaptable place, content disclosed herein can be used for such or other base treatment instrument.In addition, substrate can be handled more than once, and for example in order to generate multilayer IC, therefore term substrate herein also can refer to comprise the substrate of a plurality of processing layers.

Term used herein " radiation " and " light beam " comprise all types of electromagnetic radiation, comprise ultraviolet (UV) radiation (for example have 408,355,365,248,193,157 or the wavelength of 126nm) and extreme ultraviolet (EUV) radiation (for example having the wavelength in 5-20nm scope), and the particle beams, as ion beam or electron beam.

Term used herein " projection system " should broadly be interpreted as comprising polytype projection system, comprise dioptric system, reflective optics and catadioptric optical systern, for example being applicable to provides employed exposing radiation, perhaps other aspects, for example use of immersion liquid or vacuum.Any use of term herein " camera lens " should be thought and more common term " projection system " synonym.

Illuminator also can comprise polytype optical element, comprises that the refraction, reflection and the reflexed that are used to guide, formalize or control the radiation projecting beam penetrate optical element, and these elements also can jointly or individually be called " camera lens " hereinafter.

Lithographic equipment can be a kind of type with two (twin-stages) or more a plurality of base station.In this " multistage " mechanism, can walk abreast and use these additional stations, perhaps can on one or more platform, carry out preparation process, and one or more other be used for exposure.

Lithographic equipment also can be wherein substrate to be immersed in the type that has in the suitable high refractive index liquid (for example water), thereby fills the end component of projection system and the interval between the substrate.Also immersion liquid can be applied in other interval in the lithographic equipment, for example the interval between first element of the element arrays that can independently control and projection system.In the art, for the numerical aperture that improves projection system, immersion technique is a known method.

Only by way of example, embodiment of the invention will be described with reference to drawings now, and corresponding in the drawings Reference numeral is represented corresponding parts, wherein:

Fig. 1 has described the lithographic equipment according to one embodiment of the invention;

Fig. 2 has described composition array and the making-up unit in first embodiment of the invention;

Fig. 3 has described composition array and the making-up unit in the modification of first embodiment of the invention;

Fig. 4 has described composition array and the making-up unit in second modification of first embodiment of the invention;

Fig. 5 has described composition array and the making-up unit in second embodiment of the invention;

Fig. 6 is the process flow diagram that is used to make the manufacturing process of the composition array of second embodiment of the invention and making-up unit;

Fig. 7 is the process flow diagram of manufacturing process that is used to make the variation of the composition array of second embodiment of the invention and making-up unit;

Fig. 8 is according to the embodiment of the invention, has the block scheme of the maskless lithography system of reflective composition array;

Fig. 9 is according to the embodiment of the invention, has the block scheme of the maskless lithography system of through mode composition array;

Figure 10 expresses the composition array according to the invention process side's example;

Figure 11 expresses the further details of the composition array among Figure 10;

Figure 12 expresses the assembly according to the embodiment of the invention;

Figure 13 is the process flow diagram according to the method for one embodiment of the invention;

Figure 14 is another process flow diagram according to the method for one embodiment of the invention;

Figure 15 expresses according to one embodiment of the invention, has the composition array of one group of regulator;

Figure 16 A is according to one embodiment of the invention, the front view of composition array component;

Figure 16 B is according to one embodiment of the invention, the sectional view of composition array component;

Figure 17 A is according to one embodiment of the invention, the front view of composition array component;

Figure 17 B is according to one embodiment of the invention, the sectional view of composition array component;

Figure 18 A is according to one embodiment of the invention, the front view of composition array component;

Figure 18 B is according to one embodiment of the invention, the sectional view of composition array component.

Embodiment

Fig. 1 schematically shows the lithographic projection apparatus according to a specific embodiment of the present invention.This device comprises:

Be used to provide illuminator (luminaire) IL of the projecting beam PB of radiation (for example UV radiation);

The element arrays PPM that can independently control (for example program control reflection mirror array), it is used for applying pattern to described projecting beam; Usually, the position of the described element arrays that can independently control is fixed with respect to parts PL; Yet can change into being connected to is used to make it with respect to the pinpoint positioning element of parts PL;

Base station (for example wafer station) WT, it is used for support base (for example applying the wafer of resist) W, and be used to that described substrate is linked to each other with respect to the pinpoint positioning element PW of parts PL; And

The pattern that projection system (" camera lens ") PL, the element arrays PPM that is used for independently controlling give projecting beam PB is imaged onto the C of target portion (for example comprising one or more circuit small pieces (die)) of substrate W; Projection system can be imaged onto the element arrays that can independently control in the substrate; Or projection system can make the secondary light source imaging, and for this light source, the element of the element arrays that can independently control plays the effect of dimmer (shutter); Projection system also can comprise the concentrating element array, and for example microlens array (being called as MLA) or fresnel lens array for example are used to form secondary light source and the low-light point is imaged onto in the substrate.

As described here, this device is reflection-type (reflective array that promptly has the element that can independently control).Yet it also can be such as transmission-type (transmissive arrays that promptly has the element that can independently control) usually.

Luminaire IL receives the radiation beam from radiation source S O.This radiation source and lithographic equipment can be mechanisms independently, for example when radiation source is excimer laser.In this case, this radiation source is not considered to form the part of lithographic equipment, by means of the BD of beam Propagation system radiation beam is delivered to luminaire IL from source SO, and this transmission system BD comprises for example suitable guiding catoptron and/or optical beam expander.In other situation, for example when this radiation source was mercury lamp, this source can be a part that constitutes this device.If necessary, can be with source SO and luminaire IL and the BD of beam Propagation system-same radiating system that is called.

Luminaire IL can comprise calibrator unit AM, is used for the angle intensity distributions of calibration beam.Usually, can calibrate the outer and/or interior radius vector (be called usually σ-outer and σ-interior) of intensity distributions in the luminaire pupil plane at least.In addition, luminaire IL generally comprises various other parts, as integrator IN and condenser CO.Luminaire provides the radiation beam through overregulating, and it is known as projecting beam PB, and this light beam PB has required homogeneity and intensity distributions at its xsect.

Light beam PB intersects with the element arrays PPM that can independently control then.By projection system PL, this projection system focuses on light beam PB on the C of target portion of substrate W through the light beam PB after the element arrays PPM reflection that can independently control.Assisting down of locating device PW (with interferometric measuring means IF), base station WT can accurately move, for example for the different C of target portion in location in the light path of light beam PB.Similarly, for example in scan period, the element arrays PPM that can utilize the locating device that is used for the element arrays that can independently control accurately to revise can independently to control is with respect to the position of light beam PB light path.Usually, by means of long stroke module (coarse localization) that does not clearly show among Fig. 1 and short stroke module (accurately location), can realize moving of Target Station WT.Similarly system also can be used to locate the element arrays that can independently control.Should be appreciated that projecting beam can alternately/additionally move, and Target Station and/or the element arrays that can independently control can have the fixed position, thereby required relatively moving is provided.As another kind of substitute mode, it can be used in particular for making flat-panel monitor, and the position of base station and projection system can be fixed and substrate is arranged to respect to base station and move.For example, can provide a system for base station, this system is used to cross substrate and with the speed of substantial constant substrate is scanned.

Although lithographic equipment according to the present invention described herein is used for the resist on the exposed substrate, be appreciated that to the invention is not restricted to this application that this device can be used for employed patterning projecting beam in the no resist photoetching of projection.

Shown device can use according to four kinds of preferred patterns:

1. step mode: the element arrays that can independently control is given projecting beam with whole pattern, this pattern by projection (being single static exposure) once to the C of target portion.Base station WT moves along x and/or y direction then, so that the different C of target portion is exposed.In step mode, the full-size of exposure fields has limited the size of the C of target portion of imaging in single static exposure.

2. scan pattern: the element arrays that can independently control moves with speed v along assigned direction (so-called " direction of scanning ", for example y direction), so that the whole element arrays that can independently control of projecting beam PB scanning; Simultaneously, base station WT moves with speed V=Mv along identical or opposite direction, and wherein M is the magnification of camera lens PL.In scan pattern, the full-size of exposure fields has limited the width of the target portion of (on the non-direction of scanning) in the exposure of single action attitude, and the length of scanning motion has determined the height of target portion (on the direction of scanning).

3. pulse mode: the element arrays that can independently control keeps motionless substantially, utilizes impulse radiation source that whole pattern is projected on the C of target portion of substrate.Base station WT moves with substantially invariable speed, so that the line of substrate W is crossed in projecting beam PB scanning.Between the pulse of radiating system, the pattern on the element arrays that can independently control is revised as requested, and paired pulses carries out timing, thereby the position that needs in substrate makes the continuous C of target portion exposure.Therefore, projecting beam can cross substrate W scanning, the complete pattern so that a band of substrate has exposed.This process repeatedly always, up to whole substrate all by line by line the exposure till.

4. continuous sweep pattern; Basic identical with pulse mode, be employed be substantially invariable radiation source, and cross substrate when scanning and making it to expose when projecting beam, the pattern on the element arrays that can independently control is revised.

Also can adopt the combination and/or the modification of above-mentioned application model, perhaps adopt diverse pattern.

As shown in Figure 2, composition array 11 is assemblied on the rigid disk 12, to form composition array component 10.If necessary, this assembly is assemblied in the described device 1 by the locating device (not shown).Be electrically connected described composition array 11 by stiffener or plate 12 and 14.Be the array of piezoelectric element 13 between composition array 11 and rigid plate 12, when suitably braking piezoelectric element 13, it can make 11 distortions of composition array, nonflatness is adapted to the expection specification.Piezoelectric element also can be integrated in any one of composition array or mounting plate.If the composition array is linear, then the array of piezoelectric element 13 can be 1 dimension, but preferred 2 dimensions.Described interval generally one is selected according to the spatial frequency of the nonflatness of desired composition array 11 than big the manying of the pel spacing of composition array 11 in the interval of array.

Piezoelectric element is preferred so to be provided with, i.e. their braking has changed its edge perpendicular to the length on the direction of the nominal plane (nominal plane) on the active surface of composition array, with the described composition array of direct distortion.Yet, also may use piezoelectric actuator, it applies power in the plane of composition array, to change its shape by tension force (tension) and/or the pressure of controlling in it (compression).

In the calibration of device or recalibration process, determine to realize the suitable control signal of the correction that the nonflatness of composition array is desired, and whenever applying in the device operation.

The composition array modification that has shown first embodiment among Fig. 3.In this assembly 20, piezoelectric actuator is replaced by the array of screw rod or screw 21, and described screw rod or screw are provided in the tapped through hole of rigid plate 12, and is squeezing the dorsal part of composition array, so that can adjust these screw rods or screw, change the shape of composition array 11.Moreover, in calibration of installing or recalibration process, carry out the adjustment of screw rod or screw, and need not further action.

Fig. 4 shows second modification, and the active control of composition array shape wherein is provided.The horizon sensor system incides the nonflatness that the composition array is surveyed in position on the sensor 32 by light beam 33, and described horizon sensor system comprises light source 31, and this light source points to composition arrays 11 with acute angle with light beam 33, to reflect it to sensor 32.Light beam 33 has the marking bigger than the pixel of composition array (footprint), and surveying the whole flatness of composition array, this is better than surveying the angle of single catoptron under the composition array is the situation of deformable mirror equipment.When using this equipment, preferably when the catoptron of equipment remains static, measurement plane degree in the recurrence interval of radiation source LA.

In backfeed loop, use the measurement result of described composition array plane degree, control piezoelectric actuator, so that the composition array obtains the expection flatness.

Certainly, can use other passive or active detent to adjust the flatness of composition array.For example, the composition array can be assemblied on a plurality of bars of the material with suitable high thermal expansion coefficient, heater coil is wrapped on each bar, and optionally gives described coil pressurization, so that optionally heating to be provided, described bar selectivity is expanded.Can also use to be assemblied in the described mounting plate or the thermal sensing element on it, it is according to gas (pneumatic), magnetic or hydraulic pressure (hydraulic) operate detent.In addition, the composition array can be assemblied on the end of a plurality of bars or bolt (pins), and the other end of described bar or bolt links to each other with a plurality of detents of above-mentioned arbitrary type.By the power of control action, can in the composition array, cause local bending moment (bending moment), to improve its flatness at boom end.

Another embodiment of the present invention is same as described above, just in the assembling of composition array 11 different (as described below).This aspect of the present invention has proposed a kind of another kind of scheme that solves problem of the present invention.It is not the height adjustable structure that is provided for adjusting the patterning apparatus flatness, but by the patterning apparatus back side is polished into optical flat, for example less than about 0.1 μ m, guarantee its flatness, then it is assemblied on the main body of suitable rigidity, described rigid body also is identical flatness by polishing.Described rigid body needs enough rigidity, to guarantee keeping described flatness in the use kind of device.

Described rigid body can be by fixing or movable base assembling, and described base can be revised comprehensive inclination (global tilt) of patterning apparatus.Preferably, solid assembly building is along traditional thread binding joining wherein, so that in assembly generation thermal expansion or when shrinking, the composition array can not twist.

Ideally, the combination of program control patterning apparatus and fixed body is strong as much as possible.Preferred combination technology is direct crystal bonding (" ansprengen "), and it is by guaranteeing before contact, treats that bonding surface will clean fully with smooth, obtains so that two crystal structures are bonding.

In this embodiment, as shown in Figure 5, by in manufacture process, the dorsal part of composition array 11 being polished into optical flatness, and it is attached on the similar polishing surface of rigid body 41, and obtains the expection flatness of composition array.In order to carry out direct crystal bonding (ansprengen) between composition array and rigid body, the surfaceness on two surfaces should be less than 0.1 μ n.Rigid body 41 also can carry control or the power supply electronic circuit 42 that is used for composition array 11.Described circuit can be assemblied in a side or the end of rigid body 41.By detent or pivot 43,44 (preferred three), rigid body is assembled on the mainboard of composition array component 40, described detent or pivot make comprehensive inclination of rigid body obtain required setting and control.Fig. 6 and 7 shows the composition array that is used to produce the dorsal part with polishing and it is attached to two examples of the manufacturing process on the rigid body of polishing.

As the bonding replacement form of direct crystal, can composition array 11 be attached on the rigid body by so-called " verennest ".Verennest comprises a large amount of little flexible member (generally be identical, and generally be metal).By using many elements, can obtain equally distributed power, no matter the local nonflatness or the variation in thickness degree of nipped object.Therefore center on a plurality of small-sized independent elastomeric element that the composition array edges uses each all to have relatively little elastic force, so that the composition array is clipped on the rigid body.Can use three to end the plane that post (stop) limits the composition array and move.

Another replacement form is to utilize the glue of the glass bead that contains the fine adjustment diameter to glue together the composition array.Preferably, apply described glue with a large amount of speckle forms.The THICKNESS CONTROL of glue layer can be arrived very constant value, for example 10 μ m ± 1 μ m like this.

Fig. 8 has shown the maskless lithography system 100 according to one embodiment of the invention.System 100 comprises illuminator 102, its by beam splitter 106 and composition array optical device 108 with light transmission give reflective composition array 104 (as, digital micromirror device (DMD), reflection LCD (LCD) etc.).With composition array 104 replace in the conventional lithography systems marking-off plate and with described light-composited film.Pass beam splitter 106 and projector optical apparatus 110 from the patterning light of composition array 104 reflections, and be recorded on the object 112 (substrate of glass of for example, substrate, semiconductor wafer, flat-panel monitor etc.).

Should be appreciated that illumination optics device can be contained in the illuminator 102 well known in the art.Also should be appreciated that composition array optical device 108 and projector optical apparatus 110 can comprise well known in the art, require combination in any with the optical element of photoconduction on the desired zone of composition array 104 and/or object 112.

In replacement type embodiment, one or two in illuminator 102 and the composition array 104 can be connected or have integral controller 114 and 116 respectively.Based on the feedback from system 100, controller 114 can be used to adjust illuminator 102, or carries out calibration.Controller 116 also can be used for adjusting and/or calibration.Or, controller 116 can be used between the discrete of pixel (for example, in its grey debugging mode with complete black, or between the OFF state) pixel 302 on the (see figure 10) switch composition array 104.This can produce the pattern of the object 112 that is used to expose.Controller 116 can have the integration storer or be connected on the memory element (not shown), and described memory element has predetermined information and/or the algorithm that is used to produce pattern.

Fig. 9 has shown the maskless lithography system 200 according to further embodiment of this invention.System 200 comprises illuminator 202, and it is by composition array 204 (for example, transmission-type LCD etc.) transmission light, with described light-composited film.Composition light is by projector optical apparatus 210 transmission, with described pattern recording on the surface of object 212.In this embodiment, composition array 204 is transmission-type composition arrays, for example LCD etc.With top identical, one or two in illuminator 202 and the composition array 204 is connected with 216 with controller 214 respectively or is integrated.Controller 214 and 216 can be carried out and top described controller 114 and 116 identical functions, and this is known in the art.

The example of the composition array that uses in system 100 or 200 can be by little laser system AB (Micronic Laser Systems AB of Sweden and Institute forCircuits) of Sweden and fraunhofer circuit association and system's manufacturing of Germany.

But for convenience's sake, only reference system 100 descriptions below.Yet all notions of discussing below also can be applied to system 200, and this is known for those skilled in the art.Under the condition that does not break away from the spirit and scope of the present invention, other layout of Fig. 8 and 9 assembly and controller or integrated be conspicuous for those skilled in the art.

Figure 10 has shown the detail such as the active area 300 of composition array 104.Active area 300 comprises the n * m array (being represented by square and continuous point among the figure) of pixel 302.Pixel 302 can be catoptron on the DMD or the specific region on the LCD.By adjusting the physical characteristics of pixel 302, it can be counted as being in their attitude.Be used for the attitude of each pixel 302 of switch based on the expection numeral of pattern or analog input signal.In certain embodiments, can survey the actual pattern that is recorded on 112, and determine that described pattern is whether outside acceptable tolerance limit.If then can use controller 116 to produce real time modelling or digital controlled signal, the pattern that produces by composition array 104 with fine setting (promptly calibrate, adjustment etc.).

Figure 11 has shown the further details of composition array 104.Composition array 104 can comprise the non-active packing material 400 that is surrounded by source region (being reflection mirror array) 300.In addition, in replacement type embodiment, master controller 402 can be connected on each composition array control unit 116, with the array of monitoring and control composition array.Dotted line among Figure 11 is represented the second composition array in the array of composition array.A more than composition array can be added in the described array, to be fit to carry out design.As described below, adjacent in other embodiments composition array can be offset each other or be staggered.

Figure 12 has shown the assembly 500 that comprises bracing or strutting arrangement 502, and described bracing or strutting arrangement supports or cover the composition array component 508 that comprises a plurality of composition arrays 104.In different embodiment, as described in more detail below, according to the exposure quantity of every pulse expection, or other execution design standards, every row composition array of composition array component 508, every capable composition array etc. can have the row of varying number, row.Composition array 104 can be connected on the bracing or strutting arrangement 502.Bracing or strutting arrangement 502 can have thermal control district 504 (as water or air channel, structure heating tank etc.).Bracing or strutting arrangement 502 also have control logic circuit and relevant circuit (as, see element 116 and element 402 that Figure 11 shows, it can be ASIC, A/D converter, D/A converter, be used for the fiber optic devices of currency data etc.) the zone.In addition, bracing or strutting arrangement 502 can have opening 506 (being formed in the dotted line shape), and described opening is admitted composition array 104, and this is known in the art.Bracing or strutting arrangement 502, composition array 104 and all peripheral coolings or control device circuit are called as assembly.

Assembly 500 can allow to expect that step-length (step size) produces required stitching (stitching) (as the connection of the adjacent elements of feature on the object 112) and crossover leading and holder tail composition array 104.Leading composition array is following composition array, be that it produces first image in a series of images in scanning process on object 112, holder tail composition array is following composition array, and promptly it produces last image in a series of images on object 112 in scanning process.Between leading and holder tail composition array, can there be other composition array.Help to remove seam from the image of the leading of different scanning and holder tail composition array 104 overlapping, described seam is by adjacent, and non-overlapped scanning causes.Based on by the heat stable material manufacturing, bracing or strutting arrangement 502 can be used for the heat operation.

Bracing or strutting arrangement 502 can be used as guarantees composition array 104 mechanical prop of control at interval, and is used to embed circuit control and heat control zone 504.Can on the one or both in bracing or strutting arrangement 502 dorsal parts and the front side, assemble any electronic installation.For example, when using simulation composition array or electronic installation, distribution can be connected to active area 300 from control or connected system 504.Based on being mounted on the bracing or strutting arrangement 502, these distributions can be short relatively, and it is compared away from the situation of bracing or strutting arrangement 502 with circuit, has reduced the decay of simulating signal.Also have, between circuit and active area 300, have short-term road and can improve communication speed, improved real-time (in real time) pattern thus and regulated the speed again.

In certain embodiments, when the electronic installation in composition array 104 or the circuit consumes, can replace assembly 500 at an easy rate.Although find out that to replace assembly 500 more than what only replace chip costliness on the assembly 500, it is more effective in fact to replace whole assembly 500, and it can save production cost.Also have,, then can rebuild assembly 500, replace part to reduce if the final user is ready to use the assembly 500 of trimming.In case replaced assembly 500, only needs are comprehensive before reconstituting so aims at.

In etching system, for example system 100, and any optical aberration in the system departs from or other focus aberration as total focus, and the light in system can cause tangible error when object 112 is exposed.Although use the focus aberration here as an example, other optical aberration also can be used correction of the present invention, and this is to show and suggestion for those of skill in the art.The optical devices that relate to optical aberration can be, for example, and composition array optical device 108 or projector optical apparatus 110.A method revising the focus aberration is accurately to adjust the relative position of lens in the optical devices (as projector optical apparatus 110 or composition array optical device 108).Like this, smooth marking-off plate plane (as, the position plane of composition array component 508) be projected onto on the smooth object focal plane.Yet the lens adjustment may have the negative interaction that causes different aberrations, and it must further be revised with the adjustment of optical devices.

In one embodiment of the invention, the focus aberration can not be revised by the lens in the mobile optical device.But, move single composition array 104 from composition array component 508 respectively, with the focal curve (focus profile) that changes described projected image.This has just produced non-flat forms marking-off plate plane, and it is designed to overcome the error in the optical devices, and projects on the flat object focal plane.

Figure 13 is the process flow diagram according to the exemplary method 600 of one embodiment of the invention.In step 602, illuminate the composition array component, as composition array component 508.

In step 604,, adjust the composition array 104 in the composition array component 508 according to error or the aberration in place, the plane exposure of object 112.Figure 14 is the process flow diagram that further describes an embodiment of step 604.In step 702, gather exposure data at image plane.In one embodiment, with a series of sensor acquisition exposure datas.In one embodiment, use by a series of measurements of one or more one or more sensors that in exposing light beam, move and gather exposure data.For example, detector moves up and down along the slit of exposing light beam, and to determine point, if having, light beam is out-of-focus at this some place.In one embodiment, exposure test object 112 is checked it then, to determine error or aberration data.In step 704, determine the composition array adjustment of each composition array.These adjustment are that the aberration in one or more composition array correction exposures is required.In step 704, determine when needs flatten smooth or reduce aberration, just to adjust each composition array after the adjustment amount in step 706.Some composition arrays may not need to adjust.Also each composition array of possibility all needs the adjustment of some form.Not that each composition array all requires to adjust in the mode identical with other composition array, even have few yet.Can be before or after step 602 execution in step 604, and manner of execution 700 thus.

In the step 606 of method 600, after the composition array has been adjusted, propagate by the optical devices (as grenade instrumentation 110 or composition array optical device 108) of system from the light of composition array component 508 reflections.Exposure object 112 in step 608.

Can be at maskless lithography system manner of execution 600 is set at first.Or or additionally, when needs kept maskless lithography system, periodically manner of execution 600.Or, also can maskless lithography system carry out each the exposure before manner of execution 600.

In order to adjust single composition array 104, each the composition array 104 in the composition array component 508 can be assemblied on a regulator or a plurality of regulator.Figure 15 expresses the example composition array 104 according to this embodiment.In one embodiment, single actuator is used for each composition array.In replacement type embodiment, as shown in figure 15, a plurality of regulators 802 are attached on the composition array 104.Regulator 802 so extends, so that raises and reduced the part of the accompanying composition array of regulator.In one embodiment, regulator 802 is active, and wherein they are controlled by for example instruction from control system.Active regulator can comprise, for example piston.The length of active regulator changes in scanning process.In one embodiment, regulator 802 is passive, and wherein they are manually controlled.Passive regulator can comprise, for example screw rod or screw, and its length can manually change.

In one embodiment of the invention, each composition array 104 is assemblied in the co-planar arrangement, as shown in Figure 12.Although the present invention describes according to this initial co-planar arrangement, those skilled in the art will recognize that each composition array 104 also can be assemblied in the initial on-plane surface arrangement.When the optical aberration at needs correction image plane place when (for example total focus departs from), single composition array 104 just shifts out described co-planar arrangement then.The moving through of single composition array 104 changes the length be attached to a plurality of different adjustment devices 802 on the composition array 104 and obtains.

The composition array 104 that causes by regulator 802 move can be following one of them: the plane is moved, is tilted to move or be crooked mobile, or it can be three kinds of mobile combination in any.

Figure 16 A and 16B are the skeleton views of one embodiment of the invention.Figure 12 discusses as reference, and composition array component 508 every row and every row can have the composition array of varying number, and is not limited to the special embodiment that describes here.In the example in Figure 16 A, composition array component 508 comprises 16 composition arrays 104 that surrounded by non-active packing material 400.In this example, about having the row and the row of equal amount composition array, each composition array is identical size.Figure 16 A is the front view of composition array component 508.Figure 16 B is the side cross-sectional view of composition array component 508.In this embodiment, composition array component 508 departs from flat surfaces, and wherein the composition array 902 in the composition array component 508 is with respect to the coplane not of other composition array 104 in composition array component 508.But a plurality of regulators 802 lift composition array 902 or reduce (de-elevate) to a new plane that is parallel to composition array component 508 planes.So, can revise the optical aberration in the exposure specific region, and not change optical devices.

Figure 17 A and 17B are the skeleton views of another embodiment of the present invention.Figure 17 A is the front view of composition array component 508.Figure 17 B is the side cross-sectional view of composition array component 508.In this embodiment, composition array component 508 departs from flat surfaces, and wherein composition array 1002 is with respect to the plane inclination of other composition array 104 in the composition array component 508.In this example, composition array 1002 tilts along the y direction.Those of skill in the art will recognize in this area, and composition array 1002 also can tilt along other direction, as the x direction.In order to reach this inclination, a plurality of regulators 802 are elongated to their positions separately in proportion, till obtaining desired inclination.

Figure 18 A and 18B are the skeleton views of another embodiment of the present invention.Figure 18 A is the front view of composition array component 508.Figure 18 B is the side cross-sectional view of composition array component 508.In this embodiment, composition array component 508 departs from flat surfaces, and wherein composition array 1102 is with respect to other composition array 104 bendings in the composition array component 508.In the example of Figure 18 B, outer regulator 1104 elongations in a plurality of regulators 802, and the internal adjuster 1106 in a plurality of regulator 802 is elongated to length or the short distance of maintenance than outer regulator 1104 weak points.Each regulator can have the length different with other regulator.Person of skill in the art will appreciate that composition array 1102 can be in different local bendings, to obtain desired result.For example, in one embodiment, composition array 1102 can be convex surface or concave surface.In one embodiment, composition array 1102 can be crooked in a side, is smooth at opposite side.

Person of skill in the art will appreciate that, can respectively or combine with one another carry out described each move (lift, tilt and crooked).In addition, according in the focus correction of isomorphic graphs array position place needs not, the composition array in the composition array component 508 can differently move with other composition array in the composition array component 508.

Flat surfaces is departed from mode control or appointment in the mobile surface of composition array component 508 that causes of single composition array 104.Thisly have a mind to have changed focal curve (focusprofile) from departing from of flat surfaces.

Change has several advantages at the focal curve at composition array place.Be that described change can cause other optical aberration in the system of revising in for example system optics device (as projector optical apparatus 110 and composition array optical device 108) wherein at the focus aberration.Adjustment negative effect light path once more subsequently.The task of focus correction is transferred to the amount that composition array 104 can reduce the accurate correction that must do optical devices from grenade instrumentation 110 and composition array optical device 108.

Depart from flat surfaces and when composition array 104 places correction focus aberration also allows at tectonic system, use less severe optical devices specification.In other words, the acceptable margin of error of each lens has increased, and the required degree of accuracy of each lens has reduced.For example, if exposure has ± gross tolerance of 100nm, then the independent adjustment in optical system is challenging and dull.Yet, if the tolerance of optical devices permission ± 500nm, other revise by moving of composition array, optical devices are easy to design.The reduction of optical devices accuracy was saved in fabrication phase and the time that the stage is set.Therefore, optical system requires before can obtaining with designed optical system at the identical error volume in object 112 places, be that described optical system is designed to by using single composition array 104 to have less severe specification, with the error in the compensate for optical device.

Although specific embodiments of the invention described above should be appreciated that the present invention can also otherwise carry out.Described description also is not intended to limit the present invention.

Claims (28)

1. device making method that uses maskless lithography system, described method comprises:

Illuminate composition array component (500), described composition array component (500) has a plurality of composition arrays (104), and wherein said composition array component limits first plane, and described each composition array comprises the controlled pixel of a plurality of independences (302);

Second orientation is adjusted to from described first plane in the position of at least one the composition array (104) in the described composition array component (500): and

Use light exposure object from described composition array component.

2. method according to claim 1, other composition array coplane of at least one in wherein said first plane and the composition array component, described second orientation and described at least one other composition array be coplane not.

3. method according to claim 2, wherein said second orientation are second planes.

4. method according to claim 3, wherein said second orientation are parallel to described first plane.

5. method according to claim 3, wherein said second orientation with an angle with respect to described first plane inclination.

6. method according to claim 2, wherein said second orientation is with respect to described first plain bending.

7. method according to claim 1 is wherein adjusted the position of described at least one composition array, departs from the focus of compensation light at described object place.

8. method according to claim 1 wherein has the seedbed to adjust the position of described at least one composition array.

9. method according to claim 8 is wherein adjusted the position of described at least one composition array with piston.

10. method according to claim 1, the wherein position of described at least one the composition array of manual adjustment.

11. method according to claim 10 is wherein adjusted the position of described at least one composition array with screw rod.

12. method according to claim 1 is wherein only carried out described method in the initial setting up procedure of maskless lithography system.

13. method according to claim 1 is wherein periodically carried out described method in order to keep maskless lithography system.

14. a device making method that utilizes maskless lithography system comprises:

Illuminate the composition array component (500) with a plurality of composition arrays (104), wherein each the composition array in the composition array component all has primary importance and comprises the controlled pixel of a plurality of independences (302);

At least one composition array is adjusted to the second place from described primary importance;

To see through optical system from the light transmission of composition array component; With

With the light exposure object that is transmitted,

A plurality of composition array coplanes in wherein said primary importance and the composition array component, the described second place and composition array component be coplane not.

15. method according to claim 14, the wherein said second place is parallel to described primary importance.

16. method according to claim 14, wherein said set-up procedure comprise at least one composition array is tilted.

17. method according to claim 14, wherein said set-up procedure comprise at least one composition array bending.

18. device making method that utilizes maskless lithography system, described maskless lithography system has a plurality of composition arrays (104) in composition array component (500), described composition array component has reflecting surface, and described each composition array comprises the controlled pixel of a plurality of independences (302), and described method comprises:

Adjust at least one position of described a plurality of composition arrays according to aberration;

Illuminate described composition array component;

By the light of optical system transmission by described composition array component reflection; With

With described light exposure object,

Wherein said set-up procedure makes the reflecting surface of described composition array component depart from flat surfaces.

19. method according to claim 18, wherein said set-up procedure comprises:

Place, plane at described object receives exposure data;

Determine at least one needed correction adjustment of described a plurality of composition arrays, wherein said adjustment is based on described exposure data; With

At least one that adjust described a plurality of composition arrays as required is to reduce aberration.

20. a maskless lithography system comprises along light path:

Produce the light source of light;

Composition array component (500) with a plurality of composition arrays (104), each the composition array (104) in described a plurality of composition arrays all are attached on separately the regulator, and described each composition array comprises the controlled pixel of a plurality of independences (302);

Make the qualified optical system of described light; With

Receive the image plane of described light,

Wherein each regulator moves separately composition array as required, and revising the optical aberration in the light that is received by object, so that flat surfaces is departed from the surface of composition array component.

21. system according to claim 20, wherein said aberration is that total focus departs from.

22. system according to claim 20, wherein said regulator is one group of regulator.

23. system according to claim 22, wherein said one group of regulator tilts composition array separately.

24. system according to claim 22, wherein said one group of regulator makes composition array bending separately.

25. system according to claim 22, wherein said one group of regulator changes the height of composition array separately.

26. system according to claim 22 wherein further comprises:

Control the controller of described regulator.

27. system according to claim 26, wherein said regulator is a piston.

28. system according to claim 22, wherein said regulator is a screw rod.

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