CN101608339A - 4H-SiC selective homoepitaxy growth method - Google Patents
4H-SiC selective homoepitaxy growth method Download PDFInfo
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- CN101608339A CN101608339A CNA2009100233602A CN200910023360A CN101608339A CN 101608339 A CN101608339 A CN 101608339A CN A2009100233602 A CNA2009100233602 A CN A2009100233602A CN 200910023360 A CN200910023360 A CN 200910023360A CN 101608339 A CN101608339 A CN 101608339A
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- sic
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Abstract
The invention discloses a kind of 4H-SiC selective homoepitaxy method, can be used for the improvement of 4H-SiC preparation of devices and performance.Its detailed process is: (1) carries out pre-treatment to the 4H-SiC substrate, at this 4H-SiC substrate face growth N
-Epitaxial film; (2) at N
-The deposit tantalum metal layer forms the selective growth zone as mask layer on the type epitaxial film; (3) wafer that will be coated with tantalum is put into the CVD reaction chamber that is connected with propane and is heated to carbonization, is tantalum carbide with the tantalum carbonization; (4) sample is put into the CVD reaction chamber and carried out selective epitaxial growth, the sample that (5) will grow is put into and is contained HF and HNO
3Wet etching in the solvent is removed the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.The present invention has increased the thickness of doped region, has avoided the damage of 4H-SiC crystalline be can be used for the 4H-SiC selective area and mixes and preparation of devices.
Description
Technical field
The invention belongs to technical field of microelectronic devices, particularly relate to a kind of 4H-SiC selective homoepitaxy growth method, can be used for the improvement of SiC preparation of devices and performance.
Background technology
The SiC material is as third generation semiconductor material, with respect to being the first-generation semiconductor material of representative with Si and being that the s-generation semiconductor material of representative has considerable advantage with GaAs.The SiC material has big energy gap, can work under higher temperature, helps the preparation of high power device simultaneously; Have that big current carrier is full, drift velocity and mobility, for the response speed of device provides good basis.At present, the development of SiC device has become the research focus of semiconducter device and circuit field.
In order to mix the part of realizing silicon carbide, promptly in the 4H-SiC wafer, obtain the even and controlled zone of density unevenness, can utilize diffusion, ion implantation and epitaxially grown method.
Ion implantation doping has the following advantages:
(1) can under lower temperature, carry out, avoid the disadvantageous effect that produces owing to pyroprocessing;
(2) can accurately control the concentration of mixing impurity, distribute and the injection degree of depth;
(3) the impurity that mixes inject after through the sorting of single ground of mass analyzer, can avoid sneaking into other impurity;
(4) can on than big area, form thin and uniform doped layer;
(5) can obtain the high-concentration dopant layer and not limited by solid solubility;
(6) might develop into the non-mask doping techniques.
But SiC ion implantation doping needs high temperature annealing eliminating the lattice damage that it brings, and ion implantation doping is difficult to form dark knot, and the degree of depth is less than 1 μ m.
Bear fruit as the research of implanted dopant with nitrogen, boron, aluminium at present.Al and B are p type impurity.Al has lower ionization energy, and at room temperature degree of ionization is higher, can make input horizon have good P type characteristic.The ionization energy of B is higher, but can obtain the higher injection degree of depth.In addition, B is than easier injection of Al and activation, because Al is more than the B recuperation, and introduces many lattice damages.
As the local adulterated another kind of method of semi-conductor, thermodiffusion is widely used in the Si base and becomes circuit with the GaAs basis set.Compare with ion implantation, the advantage of thermodiffusion is: the doping process can not brought radiation injury, does not need high-temperature thermal annealing to realize that electricity activates, and can realize darker linear gradual pn knot.Yet for the SiC material, even under 1800 ℃ of high temperature, the spread coefficient of impurity is still very low, thereby the diffusing, doping of SiC needs high temperature.High-temperature technology may cause the deposit once more of SiC distillation and SiC surface reaction thing again, thereby diffusing, doping is difficult to obtain slick surface, and the doping process also becomes and is difficult to control.In addition, the local adulterated high temperature resistant mask layer of the diffusion that how to obtain being fit to also is a difficult task.
The flooding mechanism of impurity in SiC do not get across as yet fully at present, so it is not to realize the controllable doped practical approach of SiC.
Summary of the invention
The object of the invention is the deficiency at above-mentioned prior art, and a kind of 4H-SiC selective homoepitaxy growth method is provided, and to increase the thickness of doped region, avoids the 4H-SiC crystal mass is caused damage.
For achieving the above object, 4H-SiC selective homoepitaxy growth method provided by the invention may further comprise the steps:
(1) the 4H-SiC substrate is carried out passivation, cleaning and the pre-treatment of deoxidation layer, and at this 4H-SiC substrate face growth N
-Epitaxial film;
(2) at N
-Deposit 50-5000nm tantalum metal layer is as mask layer on the type epitaxial film, forms bar shaped selective growth zone, and the mask layer opening is from towards (1
00) direction arrives towards (11
0) direction;
(3) the 4H-SiC wafer that will be coated with tantalum is put into the chemical vapor deposition reaction chamber carbonization that is connected with propane, and the temperature of carbonization is 1000 ℃-1300 ℃, and the time is 10-30 minute, and tantalum is converted into tantalum carbide;
(4) will finish print after the above-mentioned steps and put into chemical vapor deposition reaction chamber and carry out selective epitaxial growth, epitaxially grown temperature is 1500 ℃-1600 ℃, and the time is 10-120 minute;
(5) print after the epitaxy is put into the solvent wet etching, remove the tantalum carbide mask layer, finish the 4H-SiC selective epitaxial growth.
The present invention has following advantage:
1) the present invention selects the depositing metal tantalum for use, and its carbonization is formed tantalum carbide, and the mask layer of property extension can not pollute isoepitaxial growth alternatively, again can be high temperature resistant;
2) the present invention is by the variation of mask layer shape and size, and the zone of controlled doping helps the different components preparation;
3) the present invention controls epitaxially grown quality and thickness by the variation of mask layer opening direction, thickness;
4) the present invention is by containing HF and HNO
3Solvent carry out wet etching, etching time is 10-30 minute, removes the tantalum carbide mask layer, simultaneously etching 4H-SiC not.
Description of drawings
Fig. 1 is the schema of the invention process method.
Embodiment
Embodiment 1
With reference to Fig. 1, the present invention includes following steps:
Step 1 is carried out pre-treatment to the 4H-SiC material that is adopted.
The 4H-SiC material that employing is produced by CREE company, its doped level is 10
18Cm
-3At first, with molten state KOH the 4H-SiC substrate surface is carried out passivation, etching temperature is that 210 ℃, etching time are 15s; Then, the wafer after the passivation is cleaned up print with acetone, methyl alcohol, deionized water successively; At last, remove the zone of oxidation of substrate surface with RCA standard cleaning technology.
Step 2, N grows on substrate
-Epitaxial film.
On pretreated substrate by CVD (Chemical Vapor Deposition) method growth homogeneity N
-The type epitaxial film, epitaxial film is doped to 1.5 * 10
15Cm
-3, thickness is 10 ± 0.5 μ m.
Step 3 adopts method for stripping metal to make tantalum barrier layer.
3a. after epitaxial wafer done the RCA standard cleaning, carry out gluing photoetching, development, the mask layer opening direction is towards (11
0);
3b., be immersed in then and do ultrasonication in the acetone at the positive tantalum layer of making 50nm of the epitaxial wafer that has the graphics field by electron beam evaporation, stripping metal forms the blocking layer.
Step 4, tantalum carbide forms tantalum carbide.
4a. adopt RCA standard cleaning print;
4b. under 100 ℃, print is dried 20min;
Put into the C that is filled with 10ml/min 4c. will be coated with the SiC wafer of tantalum
3H
8Chemical vapor deposition reaction chamber in be heated to 1000 ℃ of carbonizations 10 minutes, be tantalum carbide with the tantalum carbonization.
Step 5, the selective homoepitaxy growth.
The 4H-SiC wafer is put epitaxy in the chemical vapor deposition reaction chamber, and temperature is 1500 ℃, and pressure is 100torr, and the time is 10 minutes.
Step 6, the removal of tantalum carbide mask layer
The sample of having grown put into contain HF and HNO
3Solvent carry out wet etching, etching time is 10 minutes, removes the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.
Embodiment 2
Step 1 is carried out pre-treatment to the 4H-SiC material that is adopted.
The 4H-SiC material that employing is produced by CREE company, its doped level is 10
18Cm
-3At first, with molten state KOH the 4H-SiC substrate surface is carried out passivation, etching temperature is that 210 ℃, etching time are 15s; Then, the wafer after the passivation is cleaned up print with acetone, methyl alcohol, deionized water successively; At last, remove the zone of oxidation of substrate surface with RCA standard cleaning technology.
Step 2, N grows on substrate
-Epitaxial film.
On pretreated substrate by CVD (Chemical Vapor Deposition) method growth homogeneity N
-The type epitaxial film, epitaxial film is doped to 1.5 * 10
15Cm
-3, thickness is 10 ± 0.5 μ m.
Step 3 adopts method for stripping metal to make tantalum barrier layer.
3a. after epitaxial wafer done the RCA standard cleaning, carry out gluing photoetching, development, the mask layer opening direction departs from (11
0) direction 45 degree;
3b., be immersed in then and do ultrasonication in the acetone at the positive tantalum layer of making 500nm of the epitaxial wafer that has the graphics field by electron beam evaporation, stripping metal forms the blocking layer.
Step 4, tantalum carbide forms tantalum carbide.
4a. adopt RCA standard cleaning print;
4b. under 100 ℃, print is dried 20min;
Put into the C that is filled with 15ml/min 4c. will be coated with the SiC wafer of tantalum
3H
8Chemical vapor deposition reaction chamber in be heated to 1200 ℃ of carbonizations 20 minutes, be tantalum carbide with the tantalum carbonization.
Step 5, the selective homoepitaxy growth.
The 4H-SiC wafer is put epitaxy in the chemical vapor deposition reaction chamber, and temperature is 1550 ℃, and pressure is 150torr, and the time is 60 minutes.
Step 6, the removal of tantalum carbide mask layer
The sample of having grown put into contain HF and HNO
3Solvent carry out wet etching, etching time is 20 minutes, removes the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.
Embodiment 3
Step 1 is carried out pre-treatment to the 4H-SiC material that is adopted.
The 4H-SiC material that employing is produced by CREE company, its doped level is 10
18Cm
-3At first, with molten state KOH the 4H-SiC substrate surface is carried out passivation, etching temperature is that 210 ℃, etching time are 15s; Then, the wafer after the passivation is cleaned up print with acetone, methyl alcohol, deionized water successively; At last, remove the zone of oxidation of substrate surface with RCA standard cleaning technology.
Step 2, N grows on substrate
-Epitaxial film.
On pretreated substrate by CVD (Chemical Vapor Deposition) method growth homogeneity N
-The type epitaxial film, epitaxial film is doped to 1.5 * 10
15Cm
-3, thickness is 10 ± 0.5 μ m.
Step 3 adopts method for stripping metal to make tantalum barrier layer.
3a. after epitaxial wafer done the RCA standard cleaning, carry out gluing photoetching, development, the mask layer opening direction is towards (1
00) direction;
3b., be immersed in then and do ultrasonication in the acetone at the positive tantalum layer of making 5000nm of the epitaxial wafer that has the graphics field by electron beam evaporation, stripping metal forms the blocking layer.
Step 4, tantalum carbide forms tantalum carbide.
4a. adopt RCA standard cleaning print;
4b. under 100 ℃, print is dried 20min;
Put into the C that is filled with 20ml/min 4c. will be coated with the SiC wafer of tantalum
3H
8Chemical vapor deposition reaction chamber in be heated to 1300 ℃ of carbonizations 30 minutes, be tantalum carbide with the tantalum carbonization.
Step 5, the selective homoepitaxy growth.
The 4H-SiC wafer is put epitaxy in the chemical vapor deposition reaction chamber, and temperature is 1600 ℃, and pressure is 200torr, and the time is 60 minutes.
Step 6, the removal of tantalum carbide mask layer
The sample of having grown put into contain HF and HNO
3Solvent carry out wet etching, etching time is 30 minutes, removes the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.
Embodiment 4
Step 1 is carried out pre-treatment to the 4H-SiC material that is adopted.
The 4H-SiC material that employing is produced by CREE company, its doped level is 10
18Cm
-3At first, with molten state KOH the 4H-SiC substrate surface is carried out passivation, etching temperature is that 210 ℃, etching time are 15s; Then, the wafer after the passivation is cleaned up print with acetone, methyl alcohol, deionized water successively; At last, remove the zone of oxidation of substrate surface with RCA standard cleaning technology.
Step 2, N grows on substrate
-Epitaxial film.
On pretreated substrate by CVD (Chemical Vapor Deposition) method growth homogeneity N
-The type epitaxial film, epitaxial film is doped to 1.5 * 10
15Cm
-3, thickness is 10 ± 0.5 μ m.
Step 3 adopts method for stripping metal to make tantalum barrier layer.
3a. after epitaxial wafer done the RCA standard cleaning, carry out gluing photoetching, development, the mask layer opening direction is towards (11
0) direction;
3b., be immersed in then and do ultrasonication in the acetone at the positive tantalum layer of making 500nm of the epitaxial wafer that has the graphics field by electron beam evaporation, stripping metal forms the blocking layer.
Step 4, tantalum carbide forms tantalum carbide.
4a. adopt RCA standard cleaning print;
4b. under 100 ℃, print is dried 20min;
Put into the C that is filled with 15ml/min 4c. will be coated with the SiC wafer of tantalum
3H
8Chemical vapor deposition reaction chamber in be heated to 1200 ℃ of carbonizations 20 minutes, be tantalum carbide with the tantalum carbonization.
Step 5, the selective homoepitaxy growth.
The 4H-SiC wafer is put epitaxy in the chemical vapor deposition reaction chamber, and temperature is 1550 ℃, and pressure is 100torr, and the time is 60 minutes.
Step 6, the removal of tantalum carbide mask layer
The sample of having grown put into contain HF and HNO
3Solvent carry out wet etching, etching time is 20 minutes, removes the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.
Method of the present invention is not limited to above-mentioned 4 kinds of embodiment, obviously anyly can carry out the replacing of different parameters per capita under technical conceive of the present invention, but these are all within protection scope of the present invention.
Claims (4)
1. the method for a 4H-SiC selective homoepitaxy growth comprises the steps:
(1) the 4H-SiC substrate is carried out passivation, cleaning and the pre-treatment of deoxidation layer, and at this 4H-SiC substrate face growth N
-Epitaxial film;
(2) at N
-Deposit 50-5000nm tantalum metal layer is as mask layer on the type epitaxial film, forms bar shaped selective growth zone, the mask layer opening from towards (1100) direction to towards (1120) direction;
(3) the 4H-SiC wafer that will be coated with tantalum is put into the chemical vapor deposition reaction chamber carbonization that is connected with propane, and the temperature of carbonization is 1000 ℃-1300 ℃, and the time is 10-30 minute, and tantalum is converted into tantalum carbide;
(4) will finish print after the above-mentioned steps and put into chemical vapor deposition reaction chamber and carry out selective epitaxial growth, epitaxially grown temperature is 1500 ℃-1600 ℃, and the time is 10-120 minute;
(5) print after the epitaxy is put into the solvent wet etching, remove the tantalum carbide mask layer, finish the 4H-SiC selective epitaxial growth.
2. the growth method of selective epitaxial according to claim 1, wherein step (1) is described at 4H-SiC substrate face growth N
-Epitaxial film is by vapor phase epitaxial growth CVD (Chemical Vapor Deposition) method growth homogeneity N
-The type epitaxial film, epitaxial film is doped to 1.5 * 10
15Cm
-3, thickness is 10 ± 0.5 μ m.
3. the growth method of selective epitaxial according to claim 1, wherein the described wet etching solvent of step (5) contains HF and HNO
3, etching time is 10-30 minute.
4. the method for a 4H-SiC selective homoepitaxy growth comprises the steps:
(1) the 4H-SiC substrate is carried out the pre-treatment of passivation, cleaning and deoxidation layer, and at this 4H-SiC substrate face growth N
-Epitaxial film;
(2) at N
-The tantalum metal layer of deposit 500nm forms bar shaped selective growth zone as mask layer on the type epitaxial film, and the mask layer opening direction is towards (1120);
(3) the 4H-SiC wafer that will be coated with tantalum is put into the chemical vapor deposition reaction chamber carbonization that is connected with propane, and the temperature of carbonization is 1200 ℃, and the time is 20 minutes, and tantalum is converted into tantalum carbide;
(4) will finish print after the above-mentioned steps and put into chemical vapor deposition reaction chamber and carry out selective epitaxial growth, temperature is 1550 ℃, and pressure is 100torr, and the time is 60 minutes;
(5) print after the epitaxy is put into contained HF and HNO
3Wet etching is 20 minutes in the solvent, removes the tantalum carbide mask layer, finishes the 4H-SiC selective epitaxial growth.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102653885A (en) * | 2012-05-22 | 2012-09-05 | 西安电子科技大学 | Method for preparing structured graphene on 3C-SiC substrate |
CN103515196A (en) * | 2013-08-20 | 2014-01-15 | 西安电子科技大学 | Method for material epitaxial doping |
CN104018217A (en) * | 2014-06-12 | 2014-09-03 | 西安电子科技大学 | 4H-SiC homoepitaxial growth method |
CN108439329A (en) * | 2018-03-14 | 2018-08-24 | 河南科技大学 | A kind of preparation method of micro-nano mold type groove |
-
2009
- 2009-07-17 CN CNA2009100233602A patent/CN101608339A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102653885A (en) * | 2012-05-22 | 2012-09-05 | 西安电子科技大学 | Method for preparing structured graphene on 3C-SiC substrate |
CN103515196A (en) * | 2013-08-20 | 2014-01-15 | 西安电子科技大学 | Method for material epitaxial doping |
CN104018217A (en) * | 2014-06-12 | 2014-09-03 | 西安电子科技大学 | 4H-SiC homoepitaxial growth method |
CN108439329A (en) * | 2018-03-14 | 2018-08-24 | 河南科技大学 | A kind of preparation method of micro-nano mold type groove |
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