CN101599522B - Vertical LED adopting insulating medium barrier layer and preparation method thereof - Google Patents
Vertical LED adopting insulating medium barrier layer and preparation method thereof Download PDFInfo
- Publication number
- CN101599522B CN101599522B CN2009100167297A CN200910016729A CN101599522B CN 101599522 B CN101599522 B CN 101599522B CN 2009100167297 A CN2009100167297 A CN 2009100167297A CN 200910016729 A CN200910016729 A CN 200910016729A CN 101599522 B CN101599522 B CN 101599522B
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- adopts
- preparation
- radiating substrate
- vertical led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910015269 MoCu Inorganic materials 0.000 claims description 2
- 241001025261 Neoraja caerulea Species 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 239000007769 metal material Substances 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 238000013517 stratification Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a vertical LED adopting an insulating medium barrier layer and a preparation method thereof. A lower electrode is formed on the lower surface of a radiating substrate, and a lower welding metal is formed on the upper surface; a p-type ohmic contact reflecting metallic film is formed on the lower surface of the extension of GaN base ; parts of region on the lower surface of the reflecting metallic film are covered with an insulation dielectric film; a upper welding metal is respectively formed on the lower surface of the insulation dielectric film and bare parts of lower surface of the reflecting metallic film; the extension of the GaN base is connected with the radiating substrate by an upper welding metal and the lower welding metal of the radiating substrate; and an upper electrode is formed on the upper surface of the extension of the GaN base. The Ag surface of the reflecting mirror adopts the insulation dielectric film instead of metal material as a barrier layer, which prevents Ag from affecting by other metal heat diffusion; simple electric conduction hole design can realize vertical electricity conduction and realize lower p contact pressure drop of a vertical diode. Compared with a vertical diode adopting a metal barrier layer, the vertical diode produced with the method of the invention has lower forward working voltage and higher luminescent efficiency.
Description
Technical field
The present invention relates to a kind of high light efficiency GaN vertical LED, especially a kind of vertical LED that adopts insulating medium barrier layer and preparation method thereof.
Background technology
Present most GaN base extension mainly is grown on the Sapphire Substrate, because the sapphire poor electric conductivity, the GaN base luminescent device generally adopts transversary, promptly two electrodes are in the same side of device, electric current lateral flow distance in the n-GaN layer does not wait, and exists electric current to stop up, and produces heat; In addition, the heat conductivility of Sapphire Substrate is low, has therefore limited the luminous power and the efficient of GaN base device.Sapphire Substrate removed luminescent device is connected to conduction makes vertical stratification on heat sink and can effectively solve heat radiation, bright dipping and problem such as antistatic.
For vertical LED, how to promote its light efficiency is the problem that those skilled in the art are devoted to study always, wherein making the high reflectance ohmic contact metal layer in p type GaN base extension bottom is one of main key technology that promotes light efficiency, because at visible light wave range, the Ag reflectivity is the highest in all metal materials, and can form good Ohmic contact with p type GaN base epitaxial loayer, therefore silver (Ag) is normally first-selected; But then, if other metal diffusing is arranged to the Ag reflector, the ohmic contact characteristic of Ag and p type GaN base epitaxial loayer will variation.Usually need GaN base extension be transferred in conjunction with bonding techniques (such as eutectic bonding) and be achieved on the conduction heat-radiating substrate and make light emitting diode with vertical structure, this substrate-transfer process temperature generally is higher than 200 ℃, even more than 300 ℃, and intermetallic thermal diffusion just can not be ignored when temperature is higher than more than 150 ℃, temperature is high more, time is long more, and thermal diffusion is remarkable more, so the eutectic bonding process will inevitably cause the thermal diffusion of eutectic solder metal; Except that bonding technology, chip technology manufacturing after Sapphire Substrate is removed and packaging technology (especially white light) all need the temperature through about 150 ℃ at least, and these temperature courses also can produce the thermal diffusion of eutectic solder alloy.Solder metal is normally by Au, Sn, In etc. or its alloy composition, this type of melting point metal alloy is lower, thermal diffusion is more active, if on the Ag surface, directly deposit this type of solder metal, the contact performance of the thermal diffusion meeting heavy damage speculum Ag of eutectic process solder metal and p type GaN extension consequently, cause the forward operating voltage of vertical LED very high, seriously restricted the luminous efficiency of vertical LED, this becomes one of main bottleneck of making high light efficiency vertical LED.At this problem, general in the industry way is to increase single or multiple lift high-melting point metal barrier material in the middle of Ag and solder metal, as Ti, Pt, the alloy of Ni and W etc., this type of high melting point metal materials can stop effectively that really thermal diffusion of solder metal material is to the Ag reflector on it, but experimental result shows, metal barrier layer material itself also can portion of hot be diffused into the Ag reflector, this also destroys the contact performance of Ag and p type GaN epitaxial loayer to a certain extent, though its destructiveness than Ag direct be connected with solder metal little, but the forward operating voltage of the vertical LED that its influence causes is still higher, has therefore restricted the light efficiency of vertical LED to a certain extent.
Summary of the invention
For solving the problem that the thermal diffusion of above-mentioned metal barrier layer material own causes the light efficiency of vertical LED to be restricted to the Ag reflector, the present invention proposes a kind of vertical LED that adopts insulating medium barrier layer and preparation method thereof with innovating.
A kind of vertical LED that adopts insulating medium barrier layer comprises:
One heat-radiating substrate is provided;
Form bottom electrode at the heat-radiating substrate lower surface;
Form weld metal down at the heat-radiating substrate upper surface;
Form p type ohmic contact reflecting metallic film at GaN base extension lower surface;
Cover dielectric insulating film in reflecting metallic film lower surface portion subregion;
Form weld metal at dielectric insulating film lower surface and exposed partial reflection metal film lower surface;
GaN base extension is connected on the heat-radiating substrate by weld metal under last weld metal and the heat-radiating substrate;
Form top electrode at GaN base extension upper surface.
In the above-mentioned vertical LED, the preparation material of heat-radiating substrate is selected from GaAs, Ge, Si, Cu, Mo, WCu or MoCu; Weld metal comprised the alloy of Au or Au under last weld metal reached; P type ohmic contact reflecting metallic film comprises the alloy of Ag or AG, and thickness is 80～2000nm; Dielectric insulating film is selected from SiO
2, Si
3N
4, Al
2O
3, TiO
2In at least a material preparation, thickness 100～1000nm.
Prepare above-mentioned a kind of method that adopts the vertical LED of insulating medium barrier layer, its step is as follows:
1) epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
2) on p type GaN based semiconductor, deposit the ohmic contact reflecting metallic film, comprise the alloy of Ag or Ag;
3) deposit dielectric insulating film on above-mentioned reflecting metallic film, its preparation material is selected from SiO
2, Si
3N
4, Al
2O
3, TiO
2In at least a;
4) adopt wet method or dry etching to remove the subregion dielectric insulating film, expose the surface of part A g;
5) weld metal on deposition above the Ag surface of above-mentioned dielectric insulating film and exposure comprises the alloy of Au or Au;
6) get a heat-radiating substrate and weld metal under the surface deposition thereon, its preparation material is selected from the alloy of Au or Au;
7) by the pressuring method of heating with step 1) to 6) the GaN base extension that forms is welded on the heat-radiating substrate;
8) Sapphire Substrate is removed;
9) at n type GaN base semiconductor laminar surface middle section deposition top electrode;
10) at heat-radiating substrate lower surface deposition bottom electrode.
Among the preparation method of the present invention: GaN base LED luminescent material is to form by the organic gas chemistry precipitation of metal MOCVD method; The dielectric insulating film depositional mode is evaporation or chemical deposition; Completing steps 2) can further carry out high-temperature thermal annealing after and handle 400～500 ℃ of annealing temperatures, annealing time 10～30min reflecting metallic film; Welding manner adopts fusion bonding or eutectic bonding technology; The Sapphire Substrate removing method adopts the combination of laser lift-off, grinding, wet etching or aforementioned any two kinds of technology; Top electrode and bottom electrode depositional mode are evaporation or sputter.
Processing step 3 of the present invention) and step 4) be innovation part of the present invention, wherein step 3) adopts dielectric insulating film and nonmetal as barrier material, can avoid the influence of the thermal diffusion of metal barrier layer material own fully, can guarantee that promptly the ohmic contact resistance of Ag and p type GaN base extension is not damaged Ag; Step 4 is by to the partially-etched formation conductive hole of this dielectric insulating film, realizes the vertical electricity conducting of p type GaN base extension and heat-radiating substrate.
The invention has the beneficial effects as follows: innovation ground adopt dielectric insulating film on speculum Ag surface and nonmetallic materials as the barrier layer; protection Ag is not subjected to the influence of any metal material thermal diffusion; simultaneously easy conductive hole design can realize the conducting of vertical direction electricity; realize the lower p contact voltage drop of vertical stratification diode, the vertical stratification diode of employing the inventive method manufacturing is compared with the vertical stratification diode that adopts metal barrier has lower forward operating voltage and higher luminous efficiency.
Description of drawings
Fig. 1 a to Fig. 1 g is the schematic cross-section of preparation process of the vertical LED with new compound stacked barrier layer metal structure of the preferred embodiment of the present invention;
Among the figure: 100. Sapphire Substrate; 110.GaN basic extension; 120. reflecting metallic film;
130. dielectric insulating film; 140. last weld metal; 150. top electrode;
200. heat-radiating substrate; 210. following weld metal; 220. bottom electrode.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
A kind of preparation method who adopts the vertical LED of insulating medium barrier layer, its step is as follows:
The first step: as shown in Figure 1a, adopt MOCVD method epitaxial growth GaN base LED luminescent material 110 on Sapphire Substrate 100, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively.
Second step: shown in Fig. 1 b, adopt electron beam evaporation deposition of reflective metal film 120 on the p-GaN surface, select Ag for use, thickness is between 100nm～150nm, and high annealing makes reflecting metallic film 120 and p type GaN based semiconductor form good Ohmic contact and adhesion strength under nitrogen atmosphere.
The 3rd step to the 4th step: shown in Fig. 1 c, adopt PECVD on reflecting metallic film 120, to deposit SiO
2Dielectric insulating film 130, thickness are 230nm, and by conventional lithography and chemical etching technology, expose part A g upper surface as the vertical conduction passage.
The 5th step to the 6th step: shown in Fig. 1 d, adopt electron beam evaporation at SiO
2 Weld metal 140 on the Ag surface deposition of dielectric insulating film 130 and exposure is selected Ti/Au for use, and thickness is 30/1000nm; Get a Si substrate 200 simultaneously as heat-radiating substrate, weld metal layers 210 under the electron beam evaporation thereon, material selection Ti/AuSn, thickness are 50/1000nm, wherein the AuSn ratio is 80: 20.
The 7th step: shown in Fig. 1 e, adopt the eutectic bonding mode the above-mentioned GaN extension for preparing to be connected on the Si substrate 200 280 ℃ of bonding temperatures, pressure 5000N.
The 8th step: shown in Fig. 1 f, adopt 248nm KrF excimer laser to peel off and remove Sapphire Substrate 100, the about 1000mJ/cm of laser energy density
2
The 9th step to the tenth step: shown in Fig. 1 g, electron beam evaporation top electrode 150 on n type GaN based semiconductor, electron beam evaporation bottom electrode 220 on Si substrate 200 back sides is all selected Cr/Au for use.
Claims (10)
1. vertical LED that adopts insulating medium barrier layer comprises:
One heat-radiating substrate is provided;
Form bottom electrode at the heat-radiating substrate lower surface;
Form weld metal down at the heat-radiating substrate upper surface;
Form p type ohmic contact reflecting metallic film at GaN base extension lower surface;
Cover dielectric insulating film in reflecting metallic film lower surface portion subregion;
Form weld metal at dielectric insulating film lower surface and exposed partial reflection metal film lower surface;
GaN base extension is connected on the heat-radiating substrate by weld metal under last weld metal and the heat-radiating substrate;
Form top electrode at GaN base extension upper surface.
2. a kind of vertical LED that adopts insulating medium barrier layer as claimed in claim 1 is characterized in that: the preparation material of heat-radiating substrate is selected from GaAs, Ge, Si, Cu, Mo, WCu or MoCu.
3. a kind of vertical LED that adopts insulating medium barrier layer as claimed in claim 1 is characterized in that: weld metal comprised the alloy of Au or Au under upward weld metal reached.
4. a kind of vertical LED that adopts insulating medium barrier layer as claimed in claim 1 is characterized in that: p type ohmic contact reflecting metallic film comprises the alloy of Ag or Ag, and thickness is 80～2000nm.
5. a kind of vertical LED that adopts insulating medium barrier layer as claimed in claim 1, it is characterized in that: dielectric insulating film is selected from SiO
2, Si
3N
4, Al
2O
3, TiO
2In at least a material preparation, thickness 100～1000nm.
6. a preparation method who adopts the vertical LED of insulating medium barrier layer comprises the steps:
1) epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
2) on p type GaN based semiconductor, deposit the ohmic contact reflecting metallic film, comprise the alloy of Ag or Ag;
3) deposit dielectric insulating film on above-mentioned reflecting metallic film, its preparation material is selected from SiO
2, Si
3N
4, Al
2O
3, TiO
2In at least a;
4) adopt wet method or dry etching to remove the subregion dielectric insulating film, expose the surface of part A g;
5) weld metal on deposition above the Ag surface of above-mentioned dielectric insulating film and exposure comprises the alloy of Au or Au;
6) get a heat-radiating substrate and weld metal under the surface deposition thereon, its preparation material is selected from the alloy of Au or Au;
7) by the pressuring method of heating with step 1) to 6) the GaN base extension that forms is welded on the heat-radiating substrate;
8) Sapphire Substrate is removed;
9) at n type GaN base semiconductor laminar surface middle section deposition top electrode;
10) at heat-radiating substrate lower surface deposition bottom electrode.
7. as a kind of preparation method who adopts the vertical LED of insulating medium barrier layer as described in the claim 6, it is characterized in that: GaN base LED luminescent material is to form by the organic gas chemistry precipitation of metal MOCVD method.
8. as a kind of preparation method who adopts the vertical LED of insulating medium barrier layer as described in the claim 6, it is characterized in that: the dielectric insulating film depositional mode is evaporation or chemical deposition.
9. as a kind of preparation method who adopts the vertical LED of insulating medium barrier layer as described in the claim 6, it is characterized in that: can further carry out high-temperature thermal annealing completing steps 2) and handle reflecting metallic film, 400～500 ℃ of annealing temperatures, annealing time 10～30min.
10. as a kind of preparation method who adopts the vertical LED of insulating medium barrier layer as described in the claim 6, it is characterized in that: welding manner adopts fusion bonding or eutectic bonding technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100167297A CN101599522B (en) | 2009-06-30 | 2009-06-30 | Vertical LED adopting insulating medium barrier layer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100167297A CN101599522B (en) | 2009-06-30 | 2009-06-30 | Vertical LED adopting insulating medium barrier layer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101599522A CN101599522A (en) | 2009-12-09 |
| CN101599522B true CN101599522B (en) | 2011-05-25 |
Family
ID=41420867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100167297A Active CN101599522B (en) | 2009-06-30 | 2009-06-30 | Vertical LED adopting insulating medium barrier layer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101599522B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859852B (en) * | 2010-05-13 | 2011-09-14 | 厦门市三安光电科技有限公司 | Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes |
| TWI443870B (en) * | 2011-01-05 | 2014-07-01 | Ritedia Corp | Vertical light emitting diode and its manufacturing method |
| CN102637783A (en) * | 2011-02-15 | 2012-08-15 | 同方光电科技有限公司 | White-light emitting diode with vertical structure and manufacturing method thereof |
| JP5303008B2 (en) * | 2011-07-19 | 2013-10-02 | 株式会社神戸製鋼所 | Semiconductor device and method for manufacturing semiconductor device |
| CN103913709B (en) * | 2014-03-28 | 2017-05-17 | 江苏多维科技有限公司 | Single-chip three-axis magnetic field sensor and manufacturing method thereof |
| CN104064640A (en) * | 2014-07-04 | 2014-09-24 | 映瑞光电科技(上海)有限公司 | Vertical type led structure and manufacturing method thereof |
| CN107546198A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | A kind of GAN base electron devices and preparation method thereof |
| CN112909143A (en) * | 2021-02-04 | 2021-06-04 | 南昌大学 | Preparation method of AlGaInP thin film LED chip with specific light-emitting pattern |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617363A (en) * | 2004-10-26 | 2005-05-18 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process with low cost |
| CN1645634A (en) * | 2004-01-19 | 2005-07-27 | 三星电机株式会社 | Flip chip nitride semiconductor light emitting diode |
| CN1713468A (en) * | 2004-06-24 | 2005-12-28 | 安捷伦科技有限公司 | Lids for wafer-scale optoelectronic packages |
| CN1794425A (en) * | 2005-11-17 | 2006-06-28 | 金芃 | Improve lateral epitaxial method |
| CN1967883A (en) * | 2005-11-17 | 2007-05-23 | 上海蓝光科技有限公司 | High power LED flip-chip and its manufacturing method |
-
2009
- 2009-06-30 CN CN2009100167297A patent/CN101599522B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645634A (en) * | 2004-01-19 | 2005-07-27 | 三星电机株式会社 | Flip chip nitride semiconductor light emitting diode |
| CN1713468A (en) * | 2004-06-24 | 2005-12-28 | 安捷伦科技有限公司 | Lids for wafer-scale optoelectronic packages |
| CN1617363A (en) * | 2004-10-26 | 2005-05-18 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process with low cost |
| CN1794425A (en) * | 2005-11-17 | 2006-06-28 | 金芃 | Improve lateral epitaxial method |
| CN1967883A (en) * | 2005-11-17 | 2007-05-23 | 上海蓝光科技有限公司 | High power LED flip-chip and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101599522A (en) | 2009-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101599522B (en) | Vertical LED adopting insulating medium barrier layer and preparation method thereof | |
| KR100694784B1 (en) | Flip-chip electrode light-emitting element formed by multilayer coatings | |
| US8368100B2 (en) | Semiconductor light emitting diodes having reflective structures and methods of fabricating same | |
| CN102047454B (en) | Light-emitting device and fabricating method thereof | |
| JP5235866B2 (en) | Metal electrode formation method, semiconductor light emitting device manufacturing method, and nitride compound semiconductor light emitting device | |
| CN100483755C (en) | High power LED flip-chip and its manufacturing method | |
| TW201841391A (en) | Light-emitting device | |
| CN104022205B (en) | Light emitting device and a fabrication method thereof | |
| CN102484185A (en) | Semiconductor light-emitting element and a production method therefor | |
| KR100910964B1 (en) | Ohmic electrode and method for forming the same | |
| US20150214435A1 (en) | Semiconductor light emitting diode device and formation method thereof | |
| CN101207172A (en) | Inverted trapezoidal microstructure high-brightness light-emitting diode and manufacturing method thereof | |
| CN101929610A (en) | Large-power forward LED chip structure | |
| CN106409997A (en) | LED chip and formation method thereof | |
| CN101771114B (en) | Vertical light-emitting diode with new compound stacked barrier layer metal structure and preparation method thereof | |
| CN101771113B (en) | Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode | |
| KR20090044311A (en) | Light emitting diode and its manufacturing method | |
| JP2012529170A (en) | Light emitting semiconductor device and manufacturing method | |
| US8969907B2 (en) | Flip-chip light emitting diode | |
| CN104269470A (en) | Method for preparing perpendicular structure LED thin film chip capable of releasing stress and structure | |
| KR101534846B1 (en) | fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
| CN102916102B (en) | Optoelectronic component | |
| KR100770681B1 (en) | A device and manufacturing method of vertically structured GaN type Light Emitting Diode | |
| KR100813232B1 (en) | A device and manufacturing method of vertically structured GaN type Light Emitting Diode | |
| CN102280551B (en) | Light-emitting diode and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231102 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |