CN101599418A - Laser-stripping method - Google Patents
Laser-stripping method Download PDFInfo
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- CN101599418A CN101599418A CN 200810108596 CN200810108596A CN101599418A CN 101599418 A CN101599418 A CN 101599418A CN 200810108596 CN200810108596 CN 200810108596 CN 200810108596 A CN200810108596 A CN 200810108596A CN 101599418 A CN101599418 A CN 101599418A
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- laser
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- isolated area
- isolation
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 238000002955 isolation Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 5
- 206010007247 Carbuncle Diseases 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
- 230000003760 hair shine Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 229940044658 gallium nitrate Drugs 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
A kind of laser-stripping method, after forming epitaxial layer on the conversion baseplate, and before will being provided with the support substrate that binds metal level and this epitaxial layer combine, first the epitaxial layer etching is defined an isolation road around each die region, and be provided with not etched isolated area between adjacent two isolation roads.Make laser radiation each time only can do irradiation by this isolated area, the bonding metal level of isolating on the road will only be heated once isolation road and isolated area around the die region; Also by this isolated area produced to external carbuncle,, alleviate die region by stress rupture that laser radiation produced with cancelling each other that irradiated die region is produced to external carbuncle.
Description
Technical field
The present invention relates to a kind of laser-stripping method, be meant a kind of laser-stripping method of making the stacked crystal layer structure of LED crystal particle especially.
Background technology
Light-emitting diode (Light Emitting Diode, LED) in main the composition be LED crystal grain, form by the multiple crystalline substance of heap of stone of luminous semi-conducting material.LED crystal grain mainly is made up of gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs) or GaAs (GaAs), gallium nitride semi-conducting materials such as (GaN), and its internal structure is a PN junction, has unilateral conduction.
With the blue light-emitting diode is example, and it generally is to use sapphire (Al on making
2O
3) substrate, gallium nitrate based (GaN-based) that grow better quality in order to one-tenth builds brilliant film.Yet the conductivity and the thermal conductivity of sapphire substrate are bad, and restriction conventional blu-ray LED only can adopt the transversary of positive and negative electrode in substrate the same side.Thus, except the light-emitting area that reduces element, also make element conductive resistance and forward pressure drop increase because of current-crowding effect (current crowdingeffect).
In order to improve above-mentioned defective, after the practice of the light-emitting diode in high power field is to use sapphire substrate gallium nitride growth base brilliant film of heap of stone at present, for example then utilize the electric plating method metallic film of growing up, or utilize wafer to engage the mode of (wafer bonding), on gallium nitrate based brilliant film of heap of stone, form a new substrate, re-use laser-stripping method (Laser Lift-Off) and remove sapphire substrate, making gallium nitrate based brilliant film of heap of stone is metal adhesion (Metal Bonding) crystal grain that is positioned on the new substrate at last.New substrate more is adapted to high drive current field by its high coefficient of heat transfer and good electrical conductivity, and the high lumen flux of solution light-emitting diode descends problems such as heat radiation.
General laser-stripping method removes sapphire substrate, as shown in Figure 1, on a conversion baseplate 10 (for example sapphire substrate), form earlier an epitaxial layer 20 of illuminating in regular turn, and these epitaxial layer 20 etchings are defined isolation road 22, form die region 21 at interval, will be provided with a support substrate 40 that binds metal level 30 again and combine with this epitaxial layer 20.Then, one contiguous this conversion baseplate 10 of light shield (not shown) with vacancy section (can be shapes such as circle, rectangle) is provided with, and laser 50 is passed the vacancy section of light shield and shines this conversion baseplate 10, this moment, the epitaxial layer 20 that is positioned on this conversion baseplate 10 of irradiated region 51 of laser 50 had the die region 21 of corresponding vacancy section, and was positioned at the isolation road 22 (as shown in Figure 2) around the die region 21.After utilizing 10 heating of laser 50 blanket type ground scan process monoblock conversion baseplate, this conversion baseplate 10 can be peeled off this epitaxial layer 20, this moment, the die region 21 of this epitaxial layer 20 combined with this support substrate 40 by this bonding metal level 30.
Yet as shown in Figure 3, when this conversion baseplate 10 was incorporated into this support substrate 40 with this epitaxial layer 20, laser 50 passed irradiated region 51 meetings of light shield because conversion baseplate 10 has the problem on the aligning with the peripheral warpage that combines the back generation of support substrate 40.When laser 50 passes the vacancy section of light shield and shines this conversion baseplate 10, this moment laser 50 irradiated region 51 on aiming at, for the die region 21 of periphery, the problem that irradiated region 51 can oriented conversion baseplate 10 off-centrings.So, even if the vacancy section of light shield has calculated precisely, for the epitaxial layer 20 of these conversion baseplate 10 peripheries, when laser 50 blanket type ground scan process monoblock conversion baseplate 10, the irradiated region 51 of this laser 50 still can have twice irradiating machine meeting for adjacent isolation road 22 around the die region 21, so also will be heated twice at the bonding metal level 30 of isolating road 22, continuous high temperature will make that bonding metal level 30 is destroyed.Present settling mode, for widening the width of isolating road 22, the chance of avoiding the bonding metal level 30 in this isolation road 22 to have secondary to be heated.
In addition, when laser 50 each die region 21 of irradiation, adjacent on every side die region 21 all can directly influence by illuminated district 51 interior these die region 21 outside stress F1 that produce, after laser 50 scan process monoblock conversion baseplate 10, each die region 21 of epitaxial layer 20 is repeatedly during laser 50 irradiation, produce the structural deterioration that stress F 1 is caused, cause the structure of LED to be destroyed.
Summary of the invention
So main purpose of the present invention is to solve the problem in twice irradiation of bonding metal level of isolating the road, solve and bind the problem that metal level is heated for twice the bonding metal-layer structure is destroyed, promote the yield of crystal grain.
Another object of the present invention is to solve stress that irradiated each die region the produces crystal grain around directly exerting an influence, prevent that stacked crystal layer structure from being destroyed, promote the yield of crystal grain.
Via as can be known above, for achieving the above object, the technical scheme that technical solution problem of the present invention is adopted is, a kind of epitaxial layer that is applied to form on the conversion baseplate is being provided, and before will being provided with a support substrate that binds metal level and this epitaxial layer combine, the present invention defines one with this epitaxial layer etching and isolates the road around each die region, and is provided with not etched isolated area between adjacent two isolation roads.Wherein, the spacing of this die region is defined by two adjacent isolation roads and the isolated area in the middle of it to form, and the width in this isolation road is 1nm～10nm, and the width of this isolated area is 10nm～100nm.
By aforementioned, in between each adjacent die region, form two isolation roads, with an isolated area, therefore, when this support substrate by binding metal level and after this epitaxial layer combines, utilizing scan process monoblock conversion baseplate heating in laser blanket type ground when this conversion baseplate is peeled off this epitaxial layer, the vacancy section that passes light shield when laser shines this conversion baseplate, the irradiated region of laser only can be done irradiation to isolation road and isolated area around the die region, so just at last in the die region of this conversion baseplate periphery, also have only the isolated area of illuminated die region periphery to be made after-sun, and all will only have the once irradiating chance in the isolation road of each die region periphery, make at the bonding metal level of isolating the road and will only be heated once.
And, when each die region of laser radiation, because irradiated die region, with its around isolated area all in the irradiated region of laser, so irradiated die region produce to external carbuncle will by around isolated area produce opposite stress and offset, alleviate that each die region in the epitaxial layer is subjected to stress and the structural deterioration that produces.
The invention has the advantages that isolated area by forming between each adjacent die region, make laser radiation each time only can do irradiation to isolation road and isolated area around the die region, so the isolation road at each die region periphery all will only have the once irradiating chance, will only be heated once at the bonding metal level of isolating the road, reduce laser to binding the destruction of metal-layer structure, cause the structure of LED to be destroyed.
In addition, by the isolated area that forms between each adjacent die region, when each die region of laser radiation, by around the irradiated die region isolated area produced to external carbuncle, with cancelling each other that irradiated die region is produced, alleviate each die region in the epitaxial layer by stress rupture structure that laser radiation produced to external carbuncle.
Description of drawings
Fig. 1 is the schematic diagram of known laser stripping means.
Fig. 2 is the schematic diagram of known laser irradiated region and die region.
Fig. 3 is the irradiated region of this conversion baseplate zones of different and the relative position schematic diagram of die region.
Fig. 4 is the stress schematic diagram of known die region during by laser radiation.
Fig. 5 is the schematic diagram of laser-stripping method of the present invention.
Fig. 6 is the schematic diagram of laser irradiation area of the present invention and die region.
Fig. 7 is the stress schematic diagram of die region of the present invention during by laser radiation.
Embodiment
Relevant detailed content of the present invention and technical descriptioon now are described further with embodiment, but will be appreciated that these embodiment are the usefulness for illustrating only, and should not be interpreted as restriction of the invention process.
See also Fig. 5, the present invention is applied to existing laser-stripping method, and laser-stripping method forms an epitaxial layer 200 of illuminating on the implementation in regular turn on a conversion baseplate 100 (for example sapphire substrate) for elder generation.Different with the known laser stripping means is, the present invention defines one with these epitaxial layer 200 etchings and isolates road 220 around each die region 210, and 220 in adjacent two isolation roads are provided with not etchedly, also is an isolated area 230 of these epitaxial layer 200 materials.Therefore, the spacing of this die region 210 is defined with the isolated area 230 that is positioned at its centre by two adjacent isolation roads 220 to form.In the enforcement, the width in this isolation road 220 is 1nm～10nm, and the width of this isolated area 230 is 10nm～100nm, and the width of this isolated area 230 is isolated the width in road 220 greater than this.
Then, will be provided with a support substrate 400 that binds metal level 300 again combines with this epitaxial layer 200.
Then, one contiguous this conversion baseplate 100 of light shield (not shown) with vacancy section (can be shapes such as circle, rectangle) is provided with, and laser 500 is passed the vacancy section of light shield and shines this conversion baseplate 100, after utilizing 100 heating of laser 500 blanket type ground scan process monoblock conversion baseplate, this conversion baseplate 100 can be peeled off this epitaxial layer 200, this moment, the die region 210 of this epitaxial layer 200 combined with this support substrate 400 by this bonding metal level 300.
Vacancy section with rectangular shape is an illustrative examples, as shown in Figure 6, when the irradiated region 510 of laser 500 is positioned at epitaxial layer 200 on this conversion baseplate 100 and has the die region 210 of corresponding vacancy section, because 210 of each adjacent die region have two isolation roads 220 and an isolated area 230.Therefore, laser 500 irradiations each time all only can shine the die region 210 that will shine, with the isolation road 220 around this illuminated die region 210, and the other isolated area 230 in aforementioned isolation road 220, and the isolation road 220 that is positioned at these isolated area 230 opposite sides can not be irradiated to.Especially combine the peripheral warpage place that the back produces with this support substrate 400 for this conversion baseplate 100, when laser 500 passes the vacancy section of light shield and shines this conversion baseplate 100, the die region 210 of these conversion baseplate 100 peripheries also has only the isolated area 230 of illuminated die region 210 peripheries to be made after-sun by laser 500, and all will only can just can be heated once at those 300 of bonding metal levels of isolating road 220 by the chance of laser 500 once irradiatings in the isolation road 220 of each die region 210 periphery.For the die region 210 of periphery, even if the phenomenon of oriented conversion baseplate 100 off-centrings of irradiated region 510 meetings, the inventive method can be removed the chance of 500 pairs of isolation road 220 after-suns of laser, reduces by 500 pairs of destructions of binding metal level 300 materials of laser.
Though, those isolated areas 230 are born the problem of after-sun, but also because those isolated areas 230 can't be used on the process of making light-emitting diode is used, after this conversion baseplate 100 divests again, utilize the dry ecthing mode to remove those isolated areas 230 again and get final product, do not influence follow-up light-emitting diode processing procedure.
Please consult Fig. 7 again, in laser 500 irradiations this die region 210 is produced on external carbuncle F1 in addition, the present invention is when laser 500 each die region 210 of irradiation, because irradiated die region 210, with its around isolated area 230 all in the irradiated region 510 of laser 500, so what irradiated die region 210 produced will be offseted by the isolated area 230 opposite stress F2 that produces on every side to external carbuncle F1, alleviate the stress F1 that is produced when each die region 210 is subjected to laser 500 irradiations in the epitaxial layer 200 and destroy this die region 210 structures.
Suppose that overlooking of die region 210 is square, and its length of side is L, and the spacing of adjacent die region 210 is 2L '.Then irradiated die region 210 produce to external carbuncle F1 ∝ L
2, and the isolated area 230 around the illuminated die region 210 produces to external carbuncle F2 ∝ (L+2L ')
2-L
2With L=100nm, 2L '=10nm is an example, and what irradiated die region 210 produced is offset approximately by the stress F2 that isolated area 230 is on every side produced to external carbuncle F1
Claims (4)
1. laser-stripping method is applied to a conversion baseplate (100) and goes up and form an epitaxial layer (200), and the described conversion baseplate (100) after being provided with a support substrate (400) that binds metal level (300) and described epitaxial layer (200) combining is peeled off; It is characterized in that:
The support substrate (400) that will be provided with described bonding metal level (300) is with before described epitaxial layer (200) combines, described epitaxial layer (200) etching defines in each die region (210) isolation road (220) on every side, and is provided with the isolated area (230) that not etched epitaxial layer (200) forms between adjacent two isolation roads (220);
Thereby, each irradiated region (510) of laser (500) contain lid single die region (210), illuminated die region (210) on every side isolation road (220) and in illuminated die region (210) isolated area (230) on every side.
2. laser-stripping method according to claim 1 is characterized in that, and the spacing of described die region (210) (2L ') defined with its middle isolated area (230) by two adjacent isolation roads (220) to form.
3. laser-stripping method according to claim 1 is characterized in that, the width in described isolation road (220) is 1nm～10nm.
4. laser-stripping method according to claim 1 is characterized in that, the width of described isolated area (230) is 10nm～100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810108596 CN101599418B (en) | 2008-06-02 | 2008-06-02 | Laser-stripping method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810108596 CN101599418B (en) | 2008-06-02 | 2008-06-02 | Laser-stripping method |
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| Publication Number | Publication Date |
|---|---|
| CN101599418A true CN101599418A (en) | 2009-12-09 |
| CN101599418B CN101599418B (en) | 2011-11-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054767B (en) * | 2009-11-03 | 2013-02-13 | 联胜光电股份有限公司 | Method of laser lift-off for light-emitting diode |
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| CN105723528A (en) * | 2015-11-04 | 2016-06-29 | 歌尔声学股份有限公司 | Mini LED transferring method, manufacturing method, device and electric device |
| CN106340439A (en) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | Wafer structure for laser de-bonding processing |
| WO2019061171A1 (en) * | 2017-09-28 | 2019-04-04 | Goertek. Inc | Micro-led transfer method, munufacturing method and display device |
Families Citing this family (1)
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| CN103769749B (en) * | 2013-12-30 | 2016-10-19 | 德中（天津）技术发展有限公司 | A kind of method making conductive pattern on clad with metal foil insulated substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| US8294172B2 (en) * | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
| US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
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2008
- 2008-06-02 CN CN 200810108596 patent/CN101599418B/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054767B (en) * | 2009-11-03 | 2013-02-13 | 联胜光电股份有限公司 | Method of laser lift-off for light-emitting diode |
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| WO2015135316A1 (en) * | 2014-03-12 | 2015-09-17 | 京东方科技集团股份有限公司 | Optical mask plate and laser stripping device |
| US10434599B2 (en) | 2014-03-12 | 2019-10-08 | Boe Technology Group Co., Ltd. | Optical mask plate and laser lift-off device |
| CN103887157B (en) * | 2014-03-12 | 2021-08-27 | 京东方科技集团股份有限公司 | Optical mask plate and laser stripping device |
| CN106340439A (en) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | Wafer structure for laser de-bonding processing |
| CN105723528A (en) * | 2015-11-04 | 2016-06-29 | 歌尔声学股份有限公司 | Mini LED transferring method, manufacturing method, device and electric device |
| WO2019061171A1 (en) * | 2017-09-28 | 2019-04-04 | Goertek. Inc | Micro-led transfer method, munufacturing method and display device |
| US10388634B2 (en) | 2017-09-28 | 2019-08-20 | Goertek, Inc. | Micro-LED transfer method, manufacturing method and display device |
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| Publication number | Publication date |
|---|---|
| CN101599418B (en) | 2011-11-30 |
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