CN101599410B - Flat linear ion trap - Google Patents
Flat linear ion trap Download PDFInfo
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- CN101599410B CN101599410B CN200910054963.9A CN200910054963A CN101599410B CN 101599410 B CN101599410 B CN 101599410B CN 200910054963 A CN200910054963 A CN 200910054963A CN 101599410 B CN101599410 B CN 101599410B
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- 238000005040 ion trap Methods 0.000 title claims abstract description 54
- 238000009413 insulation Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 ion hydrazines Chemical class 0.000 description 1
- 238000000534 ion trap mass spectrometry Methods 0.000 description 1
- 238000011005 laboratory method Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Electron Tubes For Measurement (AREA)
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Abstract
The invention relates to a flat linear ion trap. The flat linear ion trap comprises two PCB boards which are arranged oppositely; the surface of each PCB board is provided with a radio-frequency electrode, a first end cover electrode, a second end cover electrode, a front gate electrode and a rear gate electrode, which are positioned in the same plane, wherein, the radio-frequency electrode corresponds to the other PCB board; the first end cover electrode and the second end cover electrode are positioned at two sides of the radio-frequency electrode; and the front gate electrode and the rear gate electrode are synchronously positioned at two ends of the radio-frequency electrode, the first end cover electrode and the second end cover electrode; and an insulating clearance is arranged between the radio-frequency electrode and the first end cover electrode or the second end cover electrode. The more simplified flat linear ion trap provided by the invention, on the one hand, has higher storage capacity and ion trapping efficiency, and on the other hand, has the advantages of simple structure, easy process, low cost and the like, and is quite suitable for manufacturing a portable mass spectrograph with low cost.
Description
Technical field
The present invention relates to the ion strap mass analyzer for mass spectrometer, relate in particular to a kind of flat linear ion trap.
Background technology
Mass spectrometric analysis method is one of Main Analysis method in current life science, and mass spectrometer is topmost analytical instrument, the core component of mass spectrometer is mass analyzer, therefore want simple, the cheap small spectrometer of manufacturing structure, primary problem is exactly to design mass analyzer simple in structure, volume is little and cheap.In numerous mass analyzers, ion strap mass analyzer has simple in structure and vacuum degree is required to the features such as low, thereby becomes the first-selection of manufacturing small spectrometer.
Traditional ion strap mass analyzer is generally divided into two kinds of three-dimensional ion trap and linear ion hydrazines, and early stage three-dimensional ion trap equals nineteen fifty for development patent by Germany scientist Wolfgang Paul and American scientist Hans Georg Dehmelt.Radio frequency ion trap is now three-dimensional ion trap, and it is old by two endcap electrodes and a ring electrode group, can be formed by lathe in machining.Because it has the rotational symmetry of z axle, so be referred to as three-dimensional ion trap.The z axle section of three-dimensional ion trap has hyperbolic configuration.
In generation nineteen ninety, the people such as Jae Schwartz and Michael Senko and JohnSyka of Finnigan company of the U.S. has been developed two-dimensional linear ion trap.This ion trap is that with the difference of three-dimensional ion trap before symmetry is different, and linear ion trap has two vertical planes of symmetry, in form closer to the symmetry of " quadrupole rod ".Aspect processing, linear ion trap has adopted the curve surface grinder that technical difficulty is higher.Linear ion trap there is hyperbolic configuration perpendicular to z axle section.
Contemporaneity, the James Hager of Canadian Sciex company has developed the linear ion trap technology based on quadrupole rod.This technology adopts the quadrupole rod of complete business, just utilizes the output lens at quadrupole rod two ends as exciting electrode, applies driving voltage.This technological merit is to have retained the original qualitative ability of quadrupole rod, has increased multistage tandem ability newly simultaneously.This technique device does not need to possess hyperbolic configuration.
In this external laboratory technique, R.Graham professor Cooks of Purdue university of the U.S. has been developed reduced form ion trap.Flexible and the plane of this utilization replaces ring electrode and the endcap electrode of three-dimensional ion trap, uses the hyperboloid electrode of four plane electrodes replacement linear ion traps.The advantage of this way is that processing becomes very simple, as for wanting plane machining; Inferior position has been to introduce a large amount of high-order field effects, has increased the difficulty in control difficulty, particularly dynamic gain control, unstable properties.However, the ion trap mass spectrometry of this reduced form still can complete multiple simple analytical work.
Also have one to utilize the ion trap of common printed wiring board (Printed Circuit Boards, PCB) processing structure.This PCB ion trap is made up of four PCB plate electrodes and two Thin Stainless Steel plate electrodes.
Based on the above, a kind of flat linear ion trap of more simplifying is now proposed, there is simple in structure, handling ease and the advantage such as cheap, be applicable to very much manufacturing portable mass spectrometer cheaply.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of flat linear ion trap of more simplifying for solving the general higher problem of ion trap structure complexity, cost.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: described flat linear ion trap comprises two pcb boards that are oppositely arranged, and every pcb board surface is provided with the radio frequency electrode corresponding with an other pcb board, the first endcap electrode that is positioned at radio frequency electrode both sides and the second endcap electrode and is positioned at front gate electrode and the rear gate electrode at radio frequency electrode, the first endcap electrode and the second endcap electrode two ends simultaneously; Described radio frequency electrode, the first endcap electrode, the second endcap electrode, front gate electrode and rear gate electrode are positioned at same plane, are provided with insulation space between radio frequency electrode and the first endcap electrode and the second endcap electrode.
As one of preferred version of the present invention, between described two pcb boards, be provided with two location holes.
As one of preferred version of the present invention, described the first endcap electrode, the second endcap electrode and radio frequency electrode are equal in length.
As one of preferred version of the present invention, the length of described front gate electrode and rear gate electrode equals the distance between the first endcap electrode and the second endcap electrode.
As one of preferred version of the present invention, the distance between described two relative pcb board or metallic plates is 0.3-3cm.
The present invention is by providing a kind of flat linear ion trap of more simplifying, and on the one hand, it has the storage capacity higher than traditional three-dimensional ion trap and ion trap efficiency; It has simple in structure, handling ease and the advantage such as cheap on the other hand, is applicable to very much manufacturing portable mass spectrometer cheaply.
Brief description of the drawings
Fig. 1 is the partial cutaway schematic of flat linear ion trap of the present invention;
Fig. 2 is the structural representation of a pcb board in flat linear ion trap of the present invention;
Fig. 3 is the equipotential lines of the electric field between two plate electrode plates in the specific embodiment of the invention, demonstrate the characteristic of quadrupole field, and the region of offset from center demonstrates the characteristic of a large amount of high-order fields in region, center;
Fig. 4 is the equipotential lines of the electric field between two plate electrode plates in the specific embodiment of the invention, description be the order of magnitude of the active force received of the region of ion between two plate electrodes; In figure, conceal the region of receiving very big active force between radio frequency electrode and endcap electrode;
Fig. 5 be in the specific embodiment of the invention, repeatedly expand realize after electrode one-dimensional square to linear ion trap array.Fig. 5 shown tetra-ion traps of A-D perpendicular to z axial section, the position that ion can store is marked as * (asterisk);
Fig. 6 is the structural representation of flat linear ion trap of the present invention;
Fig. 7 is flat linear ion trap Ion Trajectory schematic diagram of the present invention.
Embodiment
Further illustrate specific embodiment of the invention step below in conjunction with accompanying drawing.
Please refer to shown in Fig. 1, Fig. 2 and Fig. 6 a kind of flat linear ion trap, the pcb board that two is oppositely arranged or metallic plate.
Each pcb board is provided with corresponding radio frequency electrode 206, the first endcap electrode 204, the second endcap electrode 205, front gate electrode 202 and rear gate electrode 203, described radio frequency electrode 206, the first endcap electrode 204, the second endcap electrode 205, front gate electrode 202 and rear gate electrode 203 are positioned at same plane, radio frequency electrode 206, the first endcap electrode 204, the second endcap electrode 205, front gate electrode 202 and rear gate electrode 203 are cuboid metallic plate, wherein, radio frequency electrode 206, the first endcap electrode 204, the longitudinally of the second endcap electrode 205 is consistent, longitudinally and the radio frequency electrode 206 of front gate electrode 202 and rear gate electrode 203, the first endcap electrode 204, the longitudinally of the second endcap electrode 205 is vertical.Wherein, described the first endcap electrode 204 and the second endcap electrode 205 lay respectively at radio frequency electrode 206 both sides, and described front gate electrode 202 and rear gate electrode 203 lay respectively at the two ends of radio frequency electrode 206, the first endcap electrode 204 and the second endcap electrode 205.Between radio frequency electrode and the first endcap electrode and the second endcap electrode, be provided with insulation space.This insulation space can be the rear generation that is corroded of the copper on pcb board.
Described the first endcap electrode 204, the second endcap electrode 205 and radio frequency electrode 206 are equal in length.The length of radio frequency electrode 206, the first endcap electrode 204, the second endcap electrode 205, front gate electrode 202 and rear gate electrode 203 refers to the length of side the longest in cuboid.The length of described front gate electrode and rear gate electrode equals the distance between the first endcap electrode and the second endcap electrode.
The ion trap of the reduced form of the present invention only adopts the pcb board (planar metal plate also can) of two particular design to complete.Most important as linear ion trap is exactly the symmetry that possesses x and y plane, as shown in Fig. 1 cutaway view, in the present invention, circuit board and lower circuit board have identical interfacial structure, and have respectively 3 cube electrodes, radio frequency electrode 206, the first endcap electrode 204 and the second endcap electrode 205.With the linear ion trap of Finnigan can analogy be, radio frequency electrode 206 is equivalent to its y direction and applies the electrode of radio-frequency voltage, and two endcap electrodes 204 or 205 are combined the effect of having played its x direction electrode---and ion can pass in and out between the first endcap electrode 204 or the second endcap electrode 205 electrodes.When use, this ion trap is whole to be positioned in vacuum.
If see separately two a slices in PCB electrode, as shown in Figure 2, the electrode of our made is respectively PCB glass substrate 201, rear gate electrode 202, front gate electrode 203, first, second endcap electrode 204,205, radio frequency electrode 206.The effect of front gate electrode and rear gate electrode, as the Skimmer lens in Finnigan instrument, passes in and out before and after ion trap z axle for controlling ion.Wherein, z direction of principal axis refers to perpendicular to paper direction.
On the section perpendicular to z axle, radio frequency electrode 206, the first endcap electrode 204 and the second endcap electrode 205 formed there is x, the symmetric quadripolar electric field of y.As shown in Figure 3, at apply+V of radio frequency electrode 206, at endcap electrode 204 and 205 apply-V, the equipotential lines of the electric field between two pcb boards hits exactly region and demonstrates the characteristic of quadrupole field at Fig. 3, and the region of offset from center demonstrates the characteristic of a large amount of high-order fields.Wherein, x, y direction are as shown in Figure 1.
What as shown in Figure 4, equipotential lines was described is the order of magnitude of the active force that is subject to of the region of ion between two pcb boards.In figure, conceal the region of receiving very big active force between radio frequency electrode 206 and the first endcap electrode 204, radio frequency electrode 206 and the second endcap electrode 205.The active force that only ion is subject in the region of Fig. 4 center is just minimum, and ion can stable existence, the i.e. saddle point of quadrupole field.
Identical with linear ion trap is before, in radio frequency electrode 206, apply main radio frequency, on the first endcap electrode 204 and the second endcap electrode 205, apply anti-phase Assisted RF Plasma CVD, front gate electrode 202 and rear gate electrode 203 apply voltage higher than the direct voltage of radio frequency electrode 206 (otherwise positive ion mode, negative ion mode).
When distance between fixing upper and lower two plate electrode plates is L, please refer to shown in Fig. 2 and Fig. 6, the height of radio frequency electrode 206 is 2L～100L, and width is 0.5L～5L; The first endcap electrode 204 is identical with the length of radio frequency electrode 206 with the second endcap electrode 205 length, and the width of the first endcap electrode 204 and the second endcap electrode 205 is 0.1L～5L; The length of front gate electrode 202 and rear gate electrode 203 is the ultimate range of the first endcap electrode 204 and the second endcap electrode 205, and the width of front gate electrode 202 and rear gate electrode 203 is 0.1L～5L.Wherein, the 207, the 208th, the location hole between upper and lower two PCB, for the assembling of ion trap.
This technology can realize array technique easily, (identical with Fig. 1 visual angle) as shown in Figure 5, repeatedly expand electrode just can realize one-dimensional square to linear ion trap array.Fig. 5 shown tetra-ion traps of A-D perpendicular to z axial section, the position that ion can store is marked as * (asterisk).
Concrete, get L=1.00cm, the first endcap electrode 204, the second endcap electrode 205 and radio frequency electrode 206 are long is 5.00cm, the first endcap electrode 204 and the wide 0.80cm of the second endcap electrode 205, the wide 1.00cm of radio frequency electrode 206, rear gate electrode 202 and front gate electrode 203 are wide is 0.50cm.
Rear gate electrode 202, front gate electrode 203 apply 2.50V direct voltage.Radio frequency electrode 206 applies the radio-frequency power supply of 1.000000MHz, and voltage range is 0～3000Vpp, and direct voltage is 0.0V.The first endcap electrode 204 and the second endcap electrode 205 apply the Assisted RF Plasma CVD of single spin-echo, and its frequency is 250kHz, and intensity is 0.50Vpp.
Please refer to shown in Fig. 7, in the time that the radio frequency of radio frequency electrode 206 gradually changes from 0～3000Vpp, ion excites ejaculation between 205 two of the first endcap electrode 204 and the second endcap electrodes, by dynode 100, ion is converted to electronics to microchannel plate 300 amplification detection.This ion trap mass range is 5～200u.
Above-described embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not depart from spirit and scope of the invention all should be encompassed in the middle of patent claim of the present invention.
Claims (5)
1. a flat linear ion trap, it is characterized in that: described flat linear ion trap comprises two pcb boards (201) that are oppositely arranged, every pcb board surface is provided with the radio frequency electrode (206) corresponding with an other pcb board, is positioned at the first endcap electrode (204) and second endcap electrode (205) of radio frequency electrode (206) both sides and is positioned at front gate electrode (202) and the rear gate electrode (203) at radio frequency electrode (206), the first endcap electrode (204) and the second endcap electrode (205) two ends simultaneously; Described radio frequency electrode (206), the first endcap electrode (204), the second endcap electrode (205), front gate electrode (202) and rear gate electrode (203) are positioned at same plane, are provided with insulation space between radio frequency electrode (206) and the first endcap electrode (204) and the second endcap electrode (205).
2. a kind of flat linear ion trap as claimed in claim 1, is characterized in that: described each pcb board is provided with two location holes (207,208).
3. a kind of flat linear ion trap as claimed in claim 1, is characterized in that: described the first endcap electrode (204), the second endcap electrode (205) and radio frequency electrode (206) are equal in length.
4. a kind of flat linear ion trap as claimed in claim 1, is characterized in that: the length of described front gate electrode (202) and rear gate electrode (203) equals the distance between the first endcap electrode (204) and the second endcap electrode (205).
5. a kind of flat linear ion trap as claimed in claim 1, is characterized in that: described in distance between two pcb boards (201) of being oppositely arranged be 0.3-3cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054963.9A CN101599410B (en) | 2009-07-16 | 2009-07-16 | Flat linear ion trap |
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| CN200910054963.9A CN101599410B (en) | 2009-07-16 | 2009-07-16 | Flat linear ion trap |
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| CN101599410A CN101599410A (en) | 2009-12-09 |
| CN101599410B true CN101599410B (en) | 2014-10-15 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103606509A (en) * | 2013-10-30 | 2014-02-26 | 中国科学院化学研究所 | Planar-ion-trap quality analyzer |
| KR101725793B1 (en) * | 2014-10-30 | 2017-04-12 | 에스케이 텔레콤주식회사 | MEMS-based Ion Trap Apparatus for Using Laser Penetrating Chip Structure and Method for Fabricating the Same |
| CN106024575B (en) * | 2016-07-08 | 2018-01-16 | 清华大学 | A kind of sandwich construction rectilinear ion trap based on MEMS technology and preparation method thereof |
| CN108806817A (en) * | 2018-06-04 | 2018-11-13 | 中国科学院武汉物理与数学研究所 | A kind of integrated blade trap device for ion-beam cleaning |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1788327A (en) * | 2003-01-10 | 2006-06-14 | 珀杜研究基金会 | Rectilinear ion trap and mass analyzer system and method |
| WO2006083264A2 (en) * | 2004-05-04 | 2006-08-10 | The University Of North Carolina At Chapel Hill | Octapole ion trap mass spectrometers and related methods |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1788327A (en) * | 2003-01-10 | 2006-06-14 | 珀杜研究基金会 | Rectilinear ion trap and mass analyzer system and method |
| WO2006083264A2 (en) * | 2004-05-04 | 2006-08-10 | The University Of North Carolina At Chapel Hill | Octapole ion trap mass spectrometers and related methods |
Non-Patent Citations (2)
| Title |
|---|
| 基于PCB的阵列离子阱质谱仪的研制;李晓旭;《仪器仪表学报》;20070831;第28卷(第8期);216-219 * |
| 李晓旭.基于PCB的阵列离子阱质谱仪的研制.《仪器仪表学报》.2007,第28卷(第8期),216-219. |
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Effective date of registration: 20180420 Address after: 314199 No. 11, No. 568 Jinyang Road, Luo Xing street, Jiashan County, Jiaxing, Zhejiang 1303 Patentee after: ZHEJIANG FUHUA ZHIXIN BIOTECHNOLOGY CO.,LTD. Address before: 200433 State Road, Yangpu District, Yangpu District, Shanghai, B2001 Patentee before: Shanghai Huazhi Biotechnology Co.,Ltd. |
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