CN101599410A - A kind of flat linear ion trap - Google Patents
A kind of flat linear ion trap Download PDFInfo
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- CN101599410A CN101599410A CNA2009100549639A CN200910054963A CN101599410A CN 101599410 A CN101599410 A CN 101599410A CN A2009100549639 A CNA2009100549639 A CN A2009100549639A CN 200910054963 A CN200910054963 A CN 200910054963A CN 101599410 A CN101599410 A CN 101599410A
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- 238000005040 ion trap Methods 0.000 title claims abstract description 55
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 ion hydrazines Chemical class 0.000 description 1
- 238000000534 ion trap mass spectrometry Methods 0.000 description 1
- 238000011005 laboratory method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The present invention relates to flat linear ion trap, it comprises two pcb boards that are oppositely arranged, and every pcb board surface is provided with and an other pcb board corresponding radio frequency electrode, first endcap electrode that is positioned at the radio frequency electrode both sides and second endcap electrode and the preceding gate electrode and the back gate electrode that are positioned at radio frequency electrode, first endcap electrode and the second endcap electrode two ends simultaneously; Described radio frequency electrode, first endcap electrode, second endcap electrode, preceding gate electrode and back gate electrode are positioned at same plane, are provided with the insulation space between the radio frequency electrode and first endcap electrode and second endcap electrode.The present invention is by providing a kind of flat linear ion trap of more simplifying, and on the one hand, it has storage capacity and the ion trap efficient higher than traditional three-dimensional ion trap; It has simple in structure, handling ease and advantage such as cheap on the other hand, is fit to very much manufacture low cost and portable formula mass spectrometer.
Description
Technical field
The present invention relates to be used for the ion strap mass analyzer of mass spectrometer, relate in particular to a kind of flat linear ion trap.
Background technology
Mass spectrometric analysis method is one of main analytical method in the present life science, and mass spectrometer is topmost analytical instrument, the core component of mass spectrometer is a mass analyzer, therefore want simple, the cheap small spectrometer of manufacturing structure, primary problem is exactly to design mass analyzer simple in structure, that volume is little and cheap.In numerous mass analyzers, ion strap mass analyzer has simple in structure and vacuum degree is required characteristics such as low, thereby becomes the first-selection of making small spectrometer.
Traditional ion strap mass analyzer generally is divided into two kinds of three-dimensional ion trap and linear ion hydrazines, and early stage three-dimensional ion trap equals nineteen fifty for development and patentization by Germany scientist Wolfgang Paul and U.S. scientist Hans Georg Dehmelt.The radio frequency ion trap of this moment is a three-dimensional ion trap, and it is old by two endcap electrodes and a ring electrode group, can be formed by lathe in machining.Because it has the rotational symmetry of z axle, so be referred to as three-dimensional ion trap.The z axle section of three-dimensional ion trap has hyperbolic configuration.
In generation nineteen ninety, the Jae Schwartz and the people such as Michael Senko and JohnSyka of U.S. Finnigan company have been developed the two-dimensional linear ion trap.The difference of this ion trap and before three-dimensional ion trap is that symmetry is different, and linear ion trap has two vertical planes of symmetry, more approaches the symmetry of " quadrupole rod " in form.Aspect processing, linear ion trap has adopted the higher curve surface grinder of technical difficulty.Linear ion trap have hyperbolic configuration perpendicular to z axle section.
Contemporaneity, the James Hager of Canadian Sciex company has developed the linear ion trap technology based on quadrupole rod.This technology adopts commercial fully quadrupole rod, and the output lens that just utilizes the quadrupole rod two ends applies driving voltage as exciting electrode.This technological merit is to have kept the original qualitative ability of quadrupole rod, has increased multistage tandem ability simultaneously newly.This technique device does not need to possess hyperbolic configuration.
In this external laboratory technique, R.Graham professor Cooks of U.S. Purdue university has been developed the reduced form ion trap.This technology is used ring electrode and endcap electrode flexible and plane replacement three-dimensional ion trap, uses four plane electrodes to replace the hyperboloid electrode of linear ion traps.The advantage of this way is that processing becomes very simple, as for wanting plane processing; Inferior position has been to introduce a large amount of high-order field effects, has increased the control difficulty, the difficulty during particularly dynamic gain is controlled, unstable properties.However, the ion trap mass spectrometry of this reduced form still can be finished multiple simple analysis work.
Also have a kind of common printed wiring board (Printed Circuit Boards, PCB) ion trap of processing structure utilized.This PCB ion trap is made of four PCB plate electrodes and two Thin Stainless Steel plate electrodes.
Based on the above, a kind of flat linear ion trap of more simplifying is now proposed, have simple in structure, handling ease and advantage such as cheap, be fit to very much manufacture low cost and portable formula mass spectrometer.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of flat linear ion trap of more simplifying to be used to solve general ion trap structure complexity, cost problem of higher.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: described flat linear ion trap comprises two pcb boards that are oppositely arranged, and every pcb board surface is provided with and an other pcb board corresponding radio frequency electrode, first endcap electrode that is positioned at the radio frequency electrode both sides and second endcap electrode and the preceding gate electrode and the back gate electrode that are positioned at radio frequency electrode, first endcap electrode and the second endcap electrode two ends simultaneously; Described radio frequency electrode, first endcap electrode, second endcap electrode, preceding gate electrode and back gate electrode are positioned at same plane, are provided with the insulation space between the radio frequency electrode and first endcap electrode and second endcap electrode.
As one of preferred version of the present invention, be provided with two location holes between described two pcb boards.
As one of preferred version of the present invention, described first endcap electrode, second endcap electrode and radio frequency electrode equal in length.
As one of preferred version of the present invention, the length of described preceding gate electrode and back gate electrode equals the distance between first endcap electrode and second endcap electrode.
As one of preferred version of the present invention, described two relative pcb boards or the distance between the metallic plate are 0.3-3cm.
The present invention is by providing a kind of flat linear ion trap of more simplifying, and on the one hand, it has storage capacity and the ion trap efficient higher than traditional three-dimensional ion trap; It has simple in structure, handling ease and advantage such as cheap on the other hand, is fit to very much manufacture low cost and portable formula mass spectrometer.
Description of drawings
Fig. 1 is the partial cutaway schematic of flat linear ion trap of the present invention;
Fig. 2 is the structural representation of a pcb board in the flat linear ion trap of the present invention;
Fig. 3 is the equipotential lines of the electric field between the two plate electrode plates in the specific embodiment of the invention, demonstrate the characteristic of quadrupole field in the zone, center, and the zone of offset from center demonstrates the characteristic of a large amount of high-order fields;
Fig. 4 is the equipotential lines of the electric field between the two plate electrode plates in the specific embodiment of the invention, description be the order of magnitude of the active force received of the zone of ion between two plate electrodes; Concealed the zone of receiving very big active force between radio frequency electrode and the endcap electrode among the figure;
Fig. 5 is for repeatedly expanding the linear ion trap array that is implemented in the one dimension direction behind the electrode in the specific embodiment of the invention.Fig. 5 shown four ion traps of A-D perpendicular to the z axial section, the position that ion can store is marked as * (asterisk);
Fig. 6 is the structural representation of flat linear ion trap of the present invention;
Fig. 7 is a flat linear ion trap intermediate ion movement locus schematic diagram of the present invention.
Embodiment
Further specify concrete implementation step of the present invention below in conjunction with accompanying drawing.
Please refer to Fig. 1, Fig. 2 and shown in Figure 6, a kind of flat linear ion trap, pcb board that two is oppositely arranged or metallic plate.
Each pcb board is provided with corresponding radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205, preceding gate electrode 202 and back gate electrode 203; Described radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205, preceding gate electrode 202 and back gate electrode 203 are positioned at same plane, radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205, preceding gate electrode 202 and back gate electrode 203 are the cuboid metallic plate, wherein, the longitudinally unanimity of radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205, the longitudinally of preceding gate electrode 202 and back gate electrode 203 is vertical with the longitudinally of radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205.Wherein, described first endcap electrode 204 and second endcap electrode 205 lay respectively at radio frequency electrode 206 both sides, and described preceding gate electrode 202 and back gate electrode 203 lay respectively at the two ends of radio frequency electrode 206, first endcap electrode 204 and second endcap electrode 205.Be provided with the insulation space between the radio frequency electrode and first endcap electrode and second endcap electrode.This insulation space can be to produce after the copper on the pcb board is corroded.
Described first endcap electrode 204, second endcap electrode 205 and radio frequency electrode 206 equal in length.The length of radio frequency electrode 206, first endcap electrode 204, second endcap electrode 205, preceding gate electrode 202 and back gate electrode 203 is meant the length of side the longest in the cuboid.The length of gate electrode and back gate electrode equals the distance between first endcap electrode and second endcap electrode before described.
The ion trap of the reduced form of the present invention only adopts the pcb board (planar metal plate also can) of two particular design to finish.Most important as linear ion trap is exactly the symmetry that possesses x and y plane, shown in Fig. 1 cutaway view, circuit board and following circuit board have identical interfacial structure in the present invention, and have 3 cube electrodes respectively, radio frequency electrode 206, first endcap electrode 204 and second endcap electrode 205.With the linear ion trap of Finnigan can analogy be, radio frequency electrode 206 is equivalent to the electrode that its y direction applies radio-frequency voltage, and two endcap electrodes 204 or 205 are combined the effect of having played its x direction electrode--and ion can pass in and out between first endcap electrode 204 or second endcap electrode, 205 electrodes.During use, this ion trap is whole to be positioned in the vacuum.
If see two a slices in the PCB electrode separately, as shown in Figure 2, the electrode of our made is respectively PCB glass substrate 201, back gate electrode 202, preceding gate electrode 203, first, second endcap electrode 204,205, radio frequency electrode 206.The effect of preceding gate electrode and back gate electrode is used to control ion and passes in and out before and after ion trap z axle as the Skimmer lens in the Finnigan instrument.Wherein, the z direction of principal axis is meant perpendicular to the paper direction.
On section perpendicular to the z axle, radio frequency electrode 206, first endcap electrode 204 and second endcap electrode 205 formed have x, the symmetric quadripolar electric field of y.As shown in Figure 3, apply+V in radio frequency electrode 206, apply-V at endcap electrode 204 and 205, the equipotential lines of the electric field between two pcb boards hits exactly the characteristic that the zone demonstrates quadrupole field at Fig. 3, and the zone of offset from center demonstrates the characteristic of a large amount of high-order fields.Wherein, x, y direction are as shown in Figure 1.
As shown in Figure 4, equipotential lines is described is the order of magnitude of the active force that is subjected to of the zone of ion between two pcb boards.Concealed the zone of receiving very big active force between the radio frequency electrode 206 and first endcap electrode 204, radio frequency electrode 206 and second endcap electrode 205 among the figure.Only the active force that ion is subjected in the zone of Fig. 4 center is just minimum, and ion can stable existence, the i.e. saddle point of quadrupole field.
Identical with before linear ion trap is, apply main radio frequency on the radio frequency electrode 206, apply anti-phase auxiliary radio frequency on first endcap electrode 204 and second endcap electrode 205, preceding gate electrode 202 and back gate electrode 203 apply the voltage (otherwise positive ion mode, negative ion mode) of the direct voltage that is higher than radio frequency electrode 206.
When the distance about fixing between the two plate electrode plates is L, please refer to Fig. 2 and shown in Figure 6, the height of radio frequency electrode 206 is 2L～100L, and width is 0.5L～5L; First endcap electrode 204 is identical with the length of radio frequency electrode 206 with second endcap electrode, 205 length, and the width of first endcap electrode 204 and second endcap electrode 205 is 0.1L～5L; The length of preceding gate electrode 202 and back gate electrode 203 is the ultimate range of first endcap electrode 204 and second endcap electrode 205, and the width of preceding gate electrode 202 and back gate electrode 203 is 0.1L～5L.Wherein, the 207, the 208th, up and down the location hole between two PCB is used for the assembling of ion trap.
This technology can realize array technique easily, and (identical with Fig. 1 visual angle) as shown in Figure 5 repeatedly expands the linear ion trap array that electrode just can be implemented in the one dimension direction.Fig. 5 shown four ion traps of A-D perpendicular to the z axial section, the position that ion can store is marked as * (asterisk).
Concrete, get L=1.00cm, first endcap electrode 204, second endcap electrode 205 and radio frequency electrode 206 length are 5.00cm, first endcap electrode 204 and second endcap electrode, 205 wide 0.80cm, radio frequency electrode 206 wide 1.00cm, back gate electrode 202 and preceding gate electrode 203 are wide to be 0.50cm.
Please refer to shown in Figure 7, when the radio frequency of radio frequency electrode 206 when 0～3000Vpp gradually changes, ion excites ejaculation between 205 two of first endcap electrode 204 and second endcap electrodes, by dynode 100 ion is converted to electronics to microchannel plate 300 amplification detection.This ion trap mass range is 5～200u.
The foregoing description is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (5)
1. flat linear ion trap, it is characterized in that: described flat linear ion trap comprises two pcb boards (201) that are oppositely arranged, and every pcb board surface is provided with and an other pcb board corresponding radio frequency electrode (206), first endcap electrode (204) that is positioned at radio frequency electrode (206) both sides and second endcap electrode (205) and the preceding gate electrode (202) and the back gate electrode (203) that are positioned at radio frequency electrode (206), first endcap electrode (204) and second endcap electrode (205) two ends simultaneously; Described radio frequency electrode (206), first endcap electrode (204), second endcap electrode (205), preceding gate electrode (202) and back gate electrode (203) are positioned at same plane, are provided with the insulation space between radio frequency electrode (206) and first endcap electrode (204) and second endcap electrode (205).
2. a kind of flat linear ion trap as claimed in claim 1 is characterized in that: be provided with two location holes (207,208) between described two pcb boards.
3. a kind of flat linear ion trap as claimed in claim 1 is characterized in that: described first endcap electrode (204), second endcap electrode (205) and radio frequency electrode (206) equal in length.
4. a kind of flat linear ion trap as claimed in claim 1 is characterized in that: the length of gate electrode (202) and back gate electrode (203) equals the distance between first endcap electrode (204) and second endcap electrode (205) before described.
5. a kind of flat linear ion trap as claimed in claim 1 is characterized in that: the distance between described two relative pcb boards or the metallic plate (201) is 0.3-3cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054963.9A CN101599410B (en) | 2009-07-16 | 2009-07-16 | Flat linear ion trap |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910054963.9A CN101599410B (en) | 2009-07-16 | 2009-07-16 | Flat linear ion trap |
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| CN101599410A true CN101599410A (en) | 2009-12-09 |
| CN101599410B CN101599410B (en) | 2014-10-15 |
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| CN200910054963.9A Expired - Fee Related CN101599410B (en) | 2009-07-16 | 2009-07-16 | Flat linear ion trap |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606509A (en) * | 2013-10-30 | 2014-02-26 | 中国科学院化学研究所 | Planar-ion-trap quality analyzer |
| CN106024575A (en) * | 2016-07-08 | 2016-10-12 | 清华大学 | MEMS technology based multilayer structured rectangular ion trap and preparation method thereof |
| CN107077643A (en) * | 2014-10-30 | 2017-08-18 | Sk电信有限公司 | For the three-dimensional ion trap device based on MEMS and its manufacture method used through the laser of ion trap structure |
| CN108806817A (en) * | 2018-06-04 | 2018-11-13 | 中国科学院武汉物理与数学研究所 | A kind of integrated blade trap device for ion-beam cleaning |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1788327A (en) * | 2003-01-10 | 2006-06-14 | 珀杜研究基金会 | Rectilinear ion trap and mass analyzer system and method |
| WO2006083264A2 (en) * | 2004-05-04 | 2006-08-10 | The University Of North Carolina At Chapel Hill | Octapole ion trap mass spectrometers and related methods |
-
2009
- 2009-07-16 CN CN200910054963.9A patent/CN101599410B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606509A (en) * | 2013-10-30 | 2014-02-26 | 中国科学院化学研究所 | Planar-ion-trap quality analyzer |
| CN107077643A (en) * | 2014-10-30 | 2017-08-18 | Sk电信有限公司 | For the three-dimensional ion trap device based on MEMS and its manufacture method used through the laser of ion trap structure |
| CN107077643B (en) * | 2014-10-30 | 2021-04-16 | 阿尔派量子技术公司 | Three-dimensional ion trap device based on MEMS and manufacturing method thereof |
| CN106024575A (en) * | 2016-07-08 | 2016-10-12 | 清华大学 | MEMS technology based multilayer structured rectangular ion trap and preparation method thereof |
| CN108806817A (en) * | 2018-06-04 | 2018-11-13 | 中国科学院武汉物理与数学研究所 | A kind of integrated blade trap device for ion-beam cleaning |
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| Publication number | Publication date |
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| CN101599410B (en) | 2014-10-15 |
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Effective date of registration: 20180420 Address after: 314199 No. 11, No. 568 Jinyang Road, Luo Xing street, Jiashan County, Jiaxing, Zhejiang 1303 Patentee after: ZHEJIANG FUHUA ZHIXIN BIOTECHNOLOGY CO.,LTD. Address before: 200433 State Road, Yangpu District, Yangpu District, Shanghai, B2001 Patentee before: Shanghai Huazhi Biotechnology Co.,Ltd. |
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Granted publication date: 20141015 |