CN101593804A - GaN基多量子阱结构的高亮度发光二极管及其制备方法 - Google Patents
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Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101789473A (zh) * | 2010-02-23 | 2010-07-28 | 厦门大学 | 一种GaN基垂直结构发光二极管及其制备方法 |
CN101931037A (zh) * | 2010-08-03 | 2010-12-29 | 上海半导体照明工程技术研究中心 | GaN基LED外延片、芯片及器件 |
CN102208511A (zh) * | 2010-03-31 | 2011-10-05 | 丰田合成株式会社 | Iii族氮化物半导体发光器件 |
CN102208500A (zh) * | 2011-05-20 | 2011-10-05 | 武汉迪源光电科技有限公司 | 一种led外延生长方法和led外延结构 |
CN102280542A (zh) * | 2011-09-02 | 2011-12-14 | 华灿光电股份有限公司 | 一种氮化镓基发光二极管多量子阱的生长方法 |
CN102487114A (zh) * | 2010-12-03 | 2012-06-06 | 武汉迪源光电科技有限公司 | 一种led外延结构 |
CN102623596A (zh) * | 2012-04-25 | 2012-08-01 | 华灿光电股份有限公司 | 一种具有倾斜量子阱结构的氮化镓半导体发光二极管 |
CN102664145A (zh) * | 2012-05-16 | 2012-09-12 | 东莞市中镓半导体科技有限公司 | 采用金属有机化合物气相外延技术生长非对称电子储蓄层高亮度发光二极管的方法 |
CN102867892A (zh) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | 具有In掺杂的低温生长P型GaN外延方法 |
CN102983233A (zh) * | 2012-11-05 | 2013-03-20 | 江苏威纳德照明科技有限公司 | 氮化镓基发光二极管的制造方法 |
CN103050592A (zh) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | 具有p型超晶格的led外延结构及其制备方法 |
CN103165774A (zh) * | 2013-02-28 | 2013-06-19 | 溧阳市宏达电机有限公司 | 一种台阶结构的碳化硅外延发光二极管 |
CN103178171A (zh) * | 2013-02-28 | 2013-06-26 | 溧阳市宏达电机有限公司 | 一种高亮度发光二极管 |
CN103296165A (zh) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
CN103500779A (zh) * | 2013-09-03 | 2014-01-08 | 华灿光电股份有限公司 | 一种GaN基发光二极管外延片及其制作方法 |
CN103682981A (zh) * | 2013-12-13 | 2014-03-26 | 广东高聚激光有限公司 | 具有极化补偿机制的氮化物量子阱、激光器及发光二极管 |
CN103928578A (zh) * | 2014-04-22 | 2014-07-16 | 湘能华磊光电股份有限公司 | Led外延层及其生长方法和led芯片 |
CN103985797A (zh) * | 2014-05-05 | 2014-08-13 | 湘能华磊光电股份有限公司 | 多量子阱结构、生长方法及具有该结构的led芯片 |
CN104157745A (zh) * | 2014-08-01 | 2014-11-19 | 湘能华磊光电股份有限公司 | Led外延层结构、生长方法及具有该结构的led芯片 |
CN104241458A (zh) * | 2013-06-21 | 2014-12-24 | 晶能光电(江西)有限公司 | 一种垒宽可变的氮化镓基led外延片的制备方法 |
CN105098008A (zh) * | 2015-06-10 | 2015-11-25 | 广西盛和电子科技股份有限公司 | 一种含三元超晶格的GaN基LED外延结构及其制备方法 |
CN105932121A (zh) * | 2016-05-05 | 2016-09-07 | 太原理工大学 | 一种三维led外延结构及其制备方法 |
CN104103724B (zh) * | 2014-08-04 | 2017-01-18 | 湘能华磊光电股份有限公司 | 渐变量子阱的led外延片、生长方法及led结构 |
CN108550668A (zh) * | 2018-02-28 | 2018-09-18 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
CN113270525A (zh) * | 2021-04-30 | 2021-08-17 | 广东德力光电有限公司 | 一种绿光外延结构的制备方法 |
CN114203327A (zh) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | 一种p-i-n结及制备方法、二极管和β核电池 |
CN115775853A (zh) * | 2023-02-10 | 2023-03-10 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及其制备方法、发光二极管 |
-
2009
- 2009-06-26 CN CN2009101120866A patent/CN101593804B/zh not_active Expired - Fee Related
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101789473B (zh) * | 2010-02-23 | 2013-03-20 | 厦门大学 | 一种GaN基垂直结构发光二极管及其制备方法 |
CN101789473A (zh) * | 2010-02-23 | 2010-07-28 | 厦门大学 | 一种GaN基垂直结构发光二极管及其制备方法 |
CN102208511A (zh) * | 2010-03-31 | 2011-10-05 | 丰田合成株式会社 | Iii族氮化物半导体发光器件 |
CN102208511B (zh) * | 2010-03-31 | 2013-10-23 | 丰田合成株式会社 | Iii族氮化物半导体发光器件 |
CN101931037A (zh) * | 2010-08-03 | 2010-12-29 | 上海半导体照明工程技术研究中心 | GaN基LED外延片、芯片及器件 |
CN102487114A (zh) * | 2010-12-03 | 2012-06-06 | 武汉迪源光电科技有限公司 | 一种led外延结构 |
CN102208500A (zh) * | 2011-05-20 | 2011-10-05 | 武汉迪源光电科技有限公司 | 一种led外延生长方法和led外延结构 |
CN102280542A (zh) * | 2011-09-02 | 2011-12-14 | 华灿光电股份有限公司 | 一种氮化镓基发光二极管多量子阱的生长方法 |
CN102623596A (zh) * | 2012-04-25 | 2012-08-01 | 华灿光电股份有限公司 | 一种具有倾斜量子阱结构的氮化镓半导体发光二极管 |
CN102664145A (zh) * | 2012-05-16 | 2012-09-12 | 东莞市中镓半导体科技有限公司 | 采用金属有机化合物气相外延技术生长非对称电子储蓄层高亮度发光二极管的方法 |
CN102664145B (zh) * | 2012-05-16 | 2014-08-27 | 东莞市中镓半导体科技有限公司 | 采用金属有机化合物气相外延技术生长非对称电子储蓄层高亮度发光二极管的方法 |
CN102867892A (zh) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | 具有In掺杂的低温生长P型GaN外延方法 |
CN102983233A (zh) * | 2012-11-05 | 2013-03-20 | 江苏威纳德照明科技有限公司 | 氮化镓基发光二极管的制造方法 |
CN102983233B (zh) * | 2012-11-05 | 2015-09-23 | 江苏威纳德照明科技有限公司 | 氮化镓基发光二极管的制造方法 |
CN103050592B (zh) * | 2013-01-06 | 2016-03-02 | 湘能华磊光电股份有限公司 | 具有p型超晶格的led外延结构及其制备方法 |
CN103050592A (zh) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | 具有p型超晶格的led外延结构及其制备方法 |
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CN103178171B (zh) * | 2013-02-28 | 2015-08-05 | 溧阳市宏达电机有限公司 | 一种高亮度发光二极管 |
CN103165774B (zh) * | 2013-02-28 | 2015-09-23 | 溧阳市宏达电机有限公司 | 一种台阶结构的碳化硅外延发光二极管 |
CN103178171A (zh) * | 2013-02-28 | 2013-06-26 | 溧阳市宏达电机有限公司 | 一种高亮度发光二极管 |
CN103296165A (zh) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
CN103296165B (zh) * | 2013-06-19 | 2016-08-10 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
CN104241458A (zh) * | 2013-06-21 | 2014-12-24 | 晶能光电(江西)有限公司 | 一种垒宽可变的氮化镓基led外延片的制备方法 |
CN103500779B (zh) * | 2013-09-03 | 2017-03-08 | 华灿光电股份有限公司 | 一种GaN基发光二极管外延片及其制作方法 |
CN103500779A (zh) * | 2013-09-03 | 2014-01-08 | 华灿光电股份有限公司 | 一种GaN基发光二极管外延片及其制作方法 |
CN103682981A (zh) * | 2013-12-13 | 2014-03-26 | 广东高聚激光有限公司 | 具有极化补偿机制的氮化物量子阱、激光器及发光二极管 |
CN103928578A (zh) * | 2014-04-22 | 2014-07-16 | 湘能华磊光电股份有限公司 | Led外延层及其生长方法和led芯片 |
CN103985797A (zh) * | 2014-05-05 | 2014-08-13 | 湘能华磊光电股份有限公司 | 多量子阱结构、生长方法及具有该结构的led芯片 |
CN103985797B (zh) * | 2014-05-05 | 2016-08-24 | 湘能华磊光电股份有限公司 | 多量子阱结构及其生长方法、及具有该结构的led芯片 |
CN104157745A (zh) * | 2014-08-01 | 2014-11-19 | 湘能华磊光电股份有限公司 | Led外延层结构、生长方法及具有该结构的led芯片 |
CN104103724B (zh) * | 2014-08-04 | 2017-01-18 | 湘能华磊光电股份有限公司 | 渐变量子阱的led外延片、生长方法及led结构 |
CN105098008A (zh) * | 2015-06-10 | 2015-11-25 | 广西盛和电子科技股份有限公司 | 一种含三元超晶格的GaN基LED外延结构及其制备方法 |
CN105932121A (zh) * | 2016-05-05 | 2016-09-07 | 太原理工大学 | 一种三维led外延结构及其制备方法 |
CN108550668A (zh) * | 2018-02-28 | 2018-09-18 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
CN108550668B (zh) * | 2018-02-28 | 2020-05-19 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
CN113270525A (zh) * | 2021-04-30 | 2021-08-17 | 广东德力光电有限公司 | 一种绿光外延结构的制备方法 |
CN114203327A (zh) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | 一种p-i-n结及制备方法、二极管和β核电池 |
CN115775853A (zh) * | 2023-02-10 | 2023-03-10 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及其制备方法、发光二极管 |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Baoqing economic and Technological Development Zone, Anhui province Ma'anshan city 243000 West Road No. 399 Patentee after: EpiTop Optoelectronic Co., Ltd. Address before: Baoqing economic and Technological Development Zone, Anhui province Ma'anshan city 243000 West Road No. 399 Patentee before: EpiTop Optoelectronic Co., Ltd. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Baoqing economic and Technological Development Zone, Anhui province Ma'anshan city 243000 West Road No. 399 Patentee after: Epitop Photoelectric Technology Co., Ltd. Address before: Baoqing economic and Technological Development Zone, Anhui province Ma'anshan city 243000 West Road No. 399 Patentee before: EpiTop Optoelectronic Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110608 Termination date: 20180626 |