CN101593793B - Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology - Google Patents
Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology Download PDFInfo
- Publication number
- CN101593793B CN101593793B CN2009100324584A CN200910032458A CN101593793B CN 101593793 B CN101593793 B CN 101593793B CN 2009100324584 A CN2009100324584 A CN 2009100324584A CN 200910032458 A CN200910032458 A CN 200910032458A CN 101593793 B CN101593793 B CN 101593793B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- mask
- vacuum freeze
- screen printing
- chip surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Printing Methods (AREA)
Abstract
The present invention discloses a method for screen printing of a fine mask on the surface of a silicon slice based on vacuum freeze drying technology, which comprises the following processing steps: 1, cleaning organic matters on the surface of the silicon slice with mixed solution of H2SO4 and H2O2, washing the silicon slice with deionized water, and drying; 2, printing a liquid material on the surface of a substrate by a screen printing method to form a mask pattern, wherein the thickness of the mask is between 20 and 70 mu; and 3, performing vacuum freeze drying on the printed silicon slice, and immersing the silicon slice into mask cleaning solution to clear macromoleclar polymer on the surface after selective etching or injection doping. In the method, because a coating is quickly cured, the spreading of the coating on the substrate is limited, and the line width can be well controlled; and the mask prepared by the method has the minimum line width of 70 mu, and meets the requirement of solar cells. Compared with photoetching, the method does not need expensive equipment, and can greatly reduce the cost of manufacturing the mask.
Description
Technical field
The present invention relates to a kind of on silicon chip the technology of screen printing fine mask figure, be a kind of specifically based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask, can be used for the manufacturing of solar cell or integrated circuit.
Technical background
At the bottom of in solar cell local diffusion, buried gate electrode or process for integrated circuit wiring, optionally protecting silicon wafer-based, realize local etching, require to be called fine mask (or fine mask figure) below the about 100 μ m of live width of mask pattern with mask.The normal method of photoetching of using was made mask pattern during solar cell, integrated circuit were made, mask pattern appears on the silicon chip behind the photoetching development, with a kind of chemical etching technology film pattern is imaged on the silicon chip then, perhaps is sent to ion injection service area and finishes the selectable doping of graph area on the silicon chip.Transfer to numerous features that mask pattern on the silicon chip has determined device, for example the interconnection line and the silicon doping district of through hole, each interlayer necessity of device.
The step of photoetching process is: 1. pre-treatment, cleaning, dehydration and silicon chip surface become counterdie to handle, and purpose is the adhesiveness that strengthens between silicon chip and the photoresist; 2. even glue, silicon chip is fixed on the vacuum slide holder, and it is that a surface has a lot of vacuum holes so that the fixedly metal of silicon chip or polytetrafluoroethylene disk, and liquid photoresist drops on the silicon chip, and silicon chip rotates and obtains the layer of even photoresist coating then; 3. soft baking 90 ℃ to 100 ℃ bakings down, is removed the solvent in the photoresist, improves adhesiveness and uniformity; 4. exposure, the photosensitive composition that luminous energy activates in the photoresist is transferred to mask plate patterns on the silicon chip of gluing; 5. develop, the solubilized zone on the photoresist is dissolved by chemical development, and silicon chip surface is stayed on visible island or graph window.6. post bake cures, and cures to require to vapor away the photoresist solvent that retains, firm photoresist.Finish above six steps have just formed etching or injection doping on silicon chip mask.This manufacture method process complexity, very high to the process conditions requirement, and apparatus expensive estimate that according to S.Campbell the photoetching cost almost accounts for 1/3rd in entire I C processing cost.The technology of this costliness is not suitable for the production application of commercialization solar cell.
Printed circuit board industry is covering printing-ink on the resin of copper plate with screen printing technique, etch mask as circuit, this technology to technology and equipment require low, be a kind of mask technique cheaply, be heated curing behind the ink printing, printing ink is sprawled in substrate in this process, make the edge of printing ink become unintelligible, live width is difficult to control, and its getable minimum feature is about 300 μ m, can not satisfy the requirement of solar cell industry far away.
Summary of the invention
Technical problem to be solved by this invention just is to overcome the defective that prior art exists, and provides a kind of based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask, and this method is made up of two steps: printing, curing fast.Because coating solidifies fast, has limited it and has sprawled suprabasil, live width can be well controlled, and the mask minimum feature that this method obtains is 70 μ m, satisfies the requirement of solar cell.Compare with photoetching, this method does not need expensive equipment, can greatly reduce the cost of making mask.
The present invention is based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask, on silicon chip, use the silk screen printing liquid material, then with its quick curing, it is characterized in that using the silk screen printing liquid material, at short notice liquid material is solidified fast then, sprawling of restriction coating improved the resolution of mask, reduced live width.
The present invention is based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask, its processing step is as follows:
1, the organic substance on cleaning silicon chip surface, cleaning fluid selects H
2SO
4And H
2O
2Mixed solution; Use the deionized water cleaning silicon chip again, oven dry then, the adhesion of increase silicon chip surface, bake out temperature is: 60 ℃～100 ℃;
Described H
2SO
4And H
2O
2Mixed solution, H
2SO
4Concentration (mass percent) is 90%～98%, H
2O
2Concentration (mass percent) is that 25%～32%, two component volume ratios are: H
2SO
4Solution: H
2O
2Solution=50: 1～80: 1.
2, the method with silk screen printing is printed on liquid material on the silicon chip surface (substrate surface), forms mask pattern (abbreviation mask), and the thickness of mask is 20～70 μ m.
Described liquid material viscosity be 500～1000cps, composition is high molecular polymerization powder and solvent, the mass percent of high molecular polymerization powder and solvent is:
High molecular polymerization powder 80%～70%
Solvent 30%～20%;
The combination of one or more in the optional epoxy resin of described high molecular polymerization powder, polyamine fat acrylate, polyester acrylic fat, polyoxyalkylene acrylate fat, the epoxy acrylate; The minimum fineness that high molecular polymer powder granule diameter should can reach to prior art less than 20 μ m;
The optional acetone of described solvent, ethylene glycol, butanediol, neopentyl glycol, diethylene glycol (DEG), triethylene glycol, polyethylene glycol or diacrylate.
3, the silicon chip that prints is put into vacuum freeze-drier immediately, temperature transfers to-10 ℃～-30 ℃ scopes, and pressure is 1.3Pa～30Pa, and the time of vacuum freeze-drying is 10min～30min.According to the goal of the invention of this step, those skilled in the art can know and learn that silicon chip vacuum freeze-drying and silk screen printing form mask pattern on silicon chip surface the time interval is short more good more.
Because liquid material is rapidly frozen curing at short notice, has limited and has sprawled, and has improved the resolution of mask, has reduced live width.Solvent in the environment under low pressure of vacuum chamber in the liquid material volatilizees fast, get back to outdoor after, liquid material can not melt distortion again yet.
After selective etch or injection are mixed, silicon chip is immersed the high molecular polymer on cleaning surface in the mask cleaning fluid.The mask cleaning fluid can be selected organic solvent such as acetone, also can select alkali lye such as NaOH solution.
The inventive method because coating solidifies fast, has limited it and has sprawled suprabasil, and live width can be well controlled, and the mask minimum feature that this method obtains is 70 μ m, satisfies the requirement of solar cell.Compare with photoetching, this method does not need expensive equipment, can greatly reduce the cost of making mask.
Description of drawings
Fig. 1 is silicon chip (claim not only substrate, substrate), mask and mask pattern lines (but also claim selective etch or inject a doping window) schematic diagram.
Wherein: the 1st, silicon chip, the 2nd, mask, the 3rd, mask pattern lines.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.
Embodiment 1, with method of the present invention at solar silicon wafers surface screen-printed fine mask, the live width of mask is between 70 μ m～100 μ m.
At first, obtain liquid material.Liquid material viscosity be 500～1000cps, composition is high molecular polymerization powder and solvent, the mass percent of high molecular polymerization powder and solvent is:
High molecular polymerization powder 80%～70%
Solvent 30%～20%;
The combination of one or more in the optional epoxy resin of described high molecular polymerization powder, polyamine fat acrylate, polyester acrylic fat, polyoxyalkylene acrylate fat, the epoxy acrylate; The minimum fineness that high molecular polymer powder granule diameter should can reach to prior art less than 20 μ m;
The optional acetone of described solvent, ethylene glycol, butanediol, neopentyl glycol, diethylene glycol (DEG), triethylene glycol, polyethylene glycol or diacrylate.
According to the liquid material of said components and proportioning preparation all applicable to present embodiment and each following embodiment.
1, the organic substance on cleaning silicon chip surface, cleaning fluid selects H
2SO
4And H
2O
2Mixed solution; Use the deionized water cleaning silicon chip again, oven dry then, the adhesion of increase silicon chip surface, bake out temperature is: 60 ℃～100 ℃;
Described H
2SO
4And H
2O
2Mixed solution, H
2SO
4Concentration (mass percent) is 90%～98%, H
2O
2Concentration (mass percent) is that 25%～32%, two component volume ratios are: H
2SO
4Solution: H
2O
2Solution=50: 1～80: 1.
H according to the said ratio preparation
2SO
4And H
2O
2Mixed solution is all applicable to present embodiment and embodiment described below.
2, be printed on the silicon chip surface with the method for the silk screen printing liquid material with above-mentioned preparation, form mask pattern, the thickness of mask is 20 μ m.Described liquid material viscosity be 500cps.
3, the silicon chip that prints is put into vacuum freeze-drier immediately, temperature transfers to-10 ℃～-30 ℃ scopes, and pressure is 1.3Pa～30Pa, and the time of vacuum freeze-drying is 10min～30min.According to the goal of the invention of this step, those skilled in the art can know and learn that silicon chip vacuum freeze-drying and silk screen printing form mask pattern on silicon chip surface the time interval is short more good more.
Embodiment 3, substantially the same manner as Example 1, different is that the formed mask thicknesses of silicon chip surface is 50 μ m; The viscosity of described photosensitive liquid material is 800cps.
Claims (4)
1. based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask, its processing step is as follows:
The organic substance on step 1, cleaning silicon chip surface, cleaning fluid selects H
2SO
4And H
2O
2Mixed solution; Use the deionized water cleaning silicon chip again, oven dry then, the adhesion of increase silicon chip surface, bake out temperature is: 60 ℃～100 ℃;
Step 2, with the method for silk screen printing liquid material is printed on the silicon chip surface, forms mask pattern, the thickness of mask is 20～70 μ m;
Step 3, the silicon chip that prints is put into vacuum freeze-drier immediately, temperature transfers to-10 ℃～-30 ℃ scopes, and pressure is 1.3Pa～30Pa, and the time of vacuum freeze-drying is 10min～30min.
2. described based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask according to claim 1, it is characterized in that: H described in the step 1
2SO
4And H
2O
2Mixed solution, H
2SO
4Concentration is mass percent 90%～98%, H
2O
2Concentration is mass percent 25%～32%, and two component volume ratios are: H
2SO
4Solution: H
2O
2Solution=50: 1～80: 1.
3. described based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask according to claim 1, it is characterized in that: the viscosity of liquid material described in the step 2 is 500～1000cps, composition is high molecular polymerization powder and solvent, and the mass percent of high molecular polymerization powder and solvent is:
High molecular polymerization powder 80%～70%;
Solvent 30%～20%.
4. described based on the method for vacuum freeze drying technology at the silicon chip surface screen printing fine mask according to claim 3, it is characterized in that:
Described high molecular polymerization powder is one or more the combination in epoxy resin, polyamine fat acrylate, polyester acrylic fat, polyoxyalkylene acrylate fat, the epoxy acrylate; High molecular polymer powder granule diameter should be less than 20 μ m;
Described solvent is acetone, ethylene glycol, butanediol, neopentyl glycol, diethylene glycol (DEG), triethylene glycol, polyethylene glycol or diacrylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100324584A CN101593793B (en) | 2009-07-08 | 2009-07-08 | Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100324584A CN101593793B (en) | 2009-07-08 | 2009-07-08 | Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101593793A CN101593793A (en) | 2009-12-02 |
| CN101593793B true CN101593793B (en) | 2011-08-17 |
Family
ID=41408343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100324584A Expired - Fee Related CN101593793B (en) | 2009-07-08 | 2009-07-08 | Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101593793B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638053B (en) * | 2013-11-12 | 2017-04-12 | 福建金石能源有限公司 | Production method of grating electrode of solar cell |
| CN112993087A (en) * | 2021-03-02 | 2021-06-18 | 苏州太阳井新能源有限公司 | Manufacturing method of photovoltaic cell electrode |
-
2009
- 2009-07-08 CN CN2009100324584A patent/CN101593793B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101593793A (en) | 2009-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103515025B (en) | A kind of low temperature curing type conductive photoreceptor slurry and the method with its making conducting wire | |
| CN102308367B (en) | Method for manufacturing insulated conductive pattern and laminate | |
| CN101764090B (en) | Organic light emitting display device and method for manufacturing the same | |
| TWI472876B (en) | Photosensitive conductive paste | |
| CN101772278B (en) | PCB (Printed Circuit Board) screen printing taphole process, screen printing taphole screen plate and manufacture method thereof | |
| CN101587291B (en) | Method of screen printing fine mask on silicon chip surface based on UV curing process | |
| CN102883546A (en) | Thick copper plate solder resistance process | |
| CN104401144A (en) | Channeled template-based transfer method | |
| CN101593793B (en) | Method for screen printing of fine mask on surface of silicon slice based on vacuum freeze drying technology | |
| CN101334587B (en) | Photosensitive resin composition for organic thin film transistor | |
| CN104112819A (en) | Organic monocrystal field effect circuit and preparation method thereof | |
| CN101189553B (en) | Conductive lithographic polymer and method of making devices using same | |
| CN104479507A (en) | Ultraviolet-cured resin composition and application thereof as solder resist | |
| CN105453191A (en) | Conductive substrate and manufacturing method thereof | |
| CN103157619A (en) | Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent | |
| JP2013134914A (en) | Conductive composition, method for manufacturing wiring board using the same, and wiring board | |
| CN108314927A (en) | Buffer layer ink and preparation method thereof | |
| CN109491163A (en) | Array substrate renovation technique, array substrate and display panel | |
| TW201901298A (en) | Photosensitive resin composition | |
| CN101336047B (en) | Method for printing circuit board and combination thereof | |
| WO2020024346A1 (en) | Method for manufacturing patterned metal film | |
| CN106298986A (en) | Negative electrode and preparation method thereof, solar units, compositions, thin film | |
| CN106960921B (en) | Organic electroluminescence device and preparation method thereof | |
| KR20150018418A (en) | Method for producing printed wiring board, laminate, laminated film and noncurable resin composition used in the same, and printed wiring board obtained by said production method | |
| JP6849221B2 (en) | Metal thin film manufacturing method and conductive structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20150708 |
|
| EXPY | Termination of patent right or utility model |