CN112993087A - Manufacturing method of photovoltaic cell electrode - Google Patents
Manufacturing method of photovoltaic cell electrode Download PDFInfo
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- CN112993087A CN112993087A CN202110229007.0A CN202110229007A CN112993087A CN 112993087 A CN112993087 A CN 112993087A CN 202110229007 A CN202110229007 A CN 202110229007A CN 112993087 A CN112993087 A CN 112993087A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a manufacturing method of a photovoltaic cell electrode, which comprises the following steps: depositing a liquid mask material containing photosensitive components on the surface of a photovoltaic device with the surface being a dielectric layer or a transparent conductive oxide or a conductive seed layer; exposing a partial region of the mask material to laser light, wherein the exposed region undergoes a chemical reaction; developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed; etching the dielectric layer to expose the semiconductor layer at the opening position, and attaching a conductive material to the surface of the semiconductor at the opening position in an electrochemical deposition mode; or attaching a conductive material on the surface of the photovoltaic device with the partial opening by means of electrochemical deposition on the transparent conductive oxide or the conductive seed layer with the opening; and removing the mask material on the surface.
Description
Technical Field
The invention relates to the field of solar cell and semiconductor manufacturing, in particular to a manufacturing method of a photovoltaic cell electrode and a photovoltaic cell formed according to the method.
Background
The crystalline silicon solar cell generally uses screen printing silver paste and forms an ohmic contact electrode of a semiconductor and a metal through high-temperature or low-temperature sintering to lead out a photon-generated carrier, and the method is the most widely applied crystalline silicon solar cell metallization method at present. The method has simple process, is the mainstream mass production process at present, and the width of the printed thin grid line can be as low as about 45 microns. In recent years, silicon wafer and cell processes are continuously developed, the production cost of solar cells is continuously reduced, the proportion of the cost generated by expensive silver paste in the metallization process in the whole cell cost is continuously increased, and the width and the aspect ratio of a silver electrode are limited by the screen printing process and the physical and chemical properties of the paste, so that the further improvement of the cell efficiency is hindered.
In order to further reduce the cost of solar cells and increase the efficiency of solar cells, the possibility of mass production of metal electrodes of solar cells by electroplating is also being sought. The method can use cheaper metals such as nickel and copper to partially or completely replace silver to realize cost reduction.
The outer surface of a crystalline silicon solar cell before the formation of electrodes is typically a full-face dielectric layer (e.g., an aluminum back plate cell, a PERC cell, a passivated contact cell such as a TOPCON cell) or a full-face transparent conductive layer (e.g., a heterojunction cell or some modified passivated contact cell). When an electroplating method is used for forming an electrode, the dielectric layer is partially etched or an opening is ablated by laser, so that a conductive material is deposited in the opening area to collect photon-generated carriers of the solar cell; or covering the area of the transparent conducting layer without the conducting material with an insulating mask material.
In order to stably and uniformly form openings with a width of 30 micrometers or less on the pyramid surface of the textured solar cell, researchers initially use photolithography processes in the semiconductor industry to form a desired opening pattern using a prefabricated mask plate in combination with exposure and development processes. The process and materials are expensive, and the control requirement on the use environment is high, so that the application in the photovoltaic industry is always limited on the project development of high-end scientific research laboratories. Dry films combined with photosensitive components have been used as inexpensive substitute materials for photoresists in the mask opening process of solar cells, but the film sticking, laminating and stripping processes of the dry films are very easy to cause the breakage of silicon wafers, and the material and the mask opening process using the material are not applied in the photovoltaic industry on a large scale in a mass production level.
Disclosure of Invention
The technical problem to be solved is as follows: it is an object of the present invention to provide a method of making an electrode for a photovoltaic cell and a photovoltaic cell formed according to the method.
The technical scheme is as follows: a method for manufacturing a photovoltaic cell electrode comprises the following steps:
depositing a liquid mask material containing photosensitive components on the surface of a photovoltaic device with the surface being a dielectric layer or a transparent conductive oxide or a conductive seed layer;
exposing a partial region of the mask material to laser light, wherein the exposed region undergoes a chemical reaction;
developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed;
etching the dielectric layer to expose the semiconductor layer at the opening position, and attaching a conductive material to the surface of the semiconductor at the opening position in an electrochemical deposition mode; or attaching a conductive material on the surface of the photovoltaic device with the partial opening by means of electrochemical deposition on the transparent conductive oxide or the conductive seed layer with the opening;
and removing the mask material on the surface.
Preferably, the mask material is deposited by any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating, or ink jet printing.
Preferably, the viscosity of the mask material is 2-30000cP, and preferably 150-6000 cP.
Preferably, the dielectric layer is any one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide or aluminum oxide, the transparent conductive oxide is any one of indium tin oxide, indium tungsten oxide, aluminum-doped zinc oxide, molybdenum oxide, tungsten-doped indium tin oxide, zirconium-doped tin oxide or zirconium-doped indium tin oxide, and the conductive seed layer is any one of titanium, nickel, copper, nickel-vanadium alloy or titanium-tungsten alloy.
Preferably, the photovoltaic device is a PERC, TOPCON, heterojunction cell, thin film cell or stacked cell of a crystalline silicon cell and a thin film cell, the structure of which applies the method at least on the light receiving surface, or a back contact cell, the structure of which applies the method only on the back light surface of the device.
Preferably, the thin film battery is any one of perovskite, copper indium gallium selenide, copper zinc tin sulfide, gallium arsenide, indium phosphide or epitaxially grown silicon and germanium batteries.
Preferably, the method further includes exposing a partial region of the mask material to laser, and then drying the mask material to cure the mask material in the exposed region.
Preferably, the exposure can be directed to areas of different materials on the surface of the photovoltaic device, respectively forming openings for depositing different metals.
Preferably, the laser wavelength range is 300-425nm, preferably 350-425 nm.
Preferably, the chemical reaction is any one of a photopolymerization reaction or a photocrosslinking reaction.
Preferably, the etching of the dielectric layer is acid or alkali etching, and the acid is one or a mixture of two or more of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid.
Preferably, the etching of the dielectric layer is respectively etching different dielectric layer regions on the surface of the photovoltaic device by using corresponding etching agents, or electrochemical anodic oxidation treatment, or laser ablation, or plasma bombardment etching.
Preferably, the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or two or more of nickel, copper, tin, silver, bismuth or indium, or an alloy of two or more metals.
Preferably, the method further includes removing the conductive seed layer after removing the mask material on the surface of the device. Preferably, the method further comprises performing a further heat treatment after removing the mask material on the surface of the device.
The photovoltaic cell prepared by the method.
Has the advantages that: the invention of the invention has the following advantages:
1. the patterns are directly written on the liquid mask material by utilizing laser, so that the cheap mask material can be used, an expensive dry film is not required to be used, a mask plate is not required to be manufactured, the patterning step is not in contact with the solar cell, and the method is very suitable for a thin crystal silicon cell;
2. the method can be used for batteries with different structures, and particularly provides a simple solution for the complex graphical problem of the back contact battery, so that the process steps, equipment and production cost are greatly simplified, and the yield is improved;
3. the method can be used for batteries with different materials on the surface.
Drawings
FIG. 1 is a flow chart of photovoltaic cell electrode fabrication;
FIG. 2 is a cross-sectional view of a device and a process method in which the surface of the photovoltaic device in example 1 is a dielectric layer and contains an electron or hole transport layer;
FIG. 3 is a cross-sectional view of the device and the process method for forming a dielectric layer and a local electron or hole transport layer on the surface of the photovoltaic device in example 1, wherein the metallization needs to be aligned with the electron or hole transport layer;
FIG. 4 is a cross-sectional view of a device and process for forming a transparent conductive oxide on the surface of a photovoltaic device in example 2;
fig. 5 is a cross-sectional view of the device and a process method for forming a conductive seed layer on the surface of the photovoltaic device in embodiment 3.
Detailed Description
The present invention is further described below, and the following examples are only used to more clearly illustrate the technical solutions of the present invention, but not to limit the scope of the present invention.
Example 1
A method for manufacturing a photovoltaic cell electrode comprises the following steps:
(1) depositing a liquid mask material containing a photosensitive component on the surface of the photovoltaic device with the surface being a dielectric layer, wherein the deposition method of the mask material comprises any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating or ink-jet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000 cP; the dielectric layer is any one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide or aluminum oxide, and the photovoltaic device is a TOPCON cell with the structure at least applying the method on the light receiving surface;
(2) exposing partial area of the mask material to laser, wherein the laser wavelength range is 300-;
(3) developing to remove the mask material of the unexposed region from the surface of the photovoltaic device, so that the dielectric layer is exposed, thereby forming a local opening of the mask material;
(4) etching the dielectric layer by acid or alkali to expose the semiconductor layer at the opening position, wherein the acid is one or a mixture of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid, the etching of the dielectric layer is to respectively etch different dielectric layer areas on the surface of the photovoltaic device by adopting corresponding etching agents, and then attach the conductive material to the semiconductor surface at the opening position in an electrochemical deposition mode; or the conductive material is attached to the surface of the photovoltaic device with the partial opening on the transparent conductive oxide or the conductive seed layer with the opening in an electrochemical deposition mode, the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or more of nickel, copper, tin, silver, bismuth or indium which are overlapped or an alloy of the metals;
(5) and removing the mask material on the surface.
Fig. 2 and fig. 3 correspond to a process method and a device cross-sectional view of a photovoltaic device with a dielectric layer on the surface and with or without an electron or hole transport layer, respectively, and the illustrated process is not limited to one side of the cell, but can be a double-sided application. The difference between fig. 2 and fig. 3 is that the electron or hole transport layer has a partial structure, and the other regions are dielectric layers rather than the upper and lower layers, and the thicknesses of the layers in the schematic diagram are not actually related.
Example 2
A method for manufacturing a photovoltaic cell electrode comprises the following steps:
(1) depositing a liquid mask material containing a photosensitive component on the surface of the transparent conductive oxide, wherein the deposition method of the mask material comprises any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating or ink-jet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000 cP; the transparent conductive oxide is any one of indium tin oxide, indium tungsten oxide, aluminum-doped zinc oxide, molybdenum oxide, tungsten-doped indium tin oxide, zirconium-doped tin oxide or zirconium-doped indium tin oxide; the photovoltaic device is a back contact cell with the structure applying the method only on the backlight surface of the device;
(2) exposing partial area of the mask material to laser, wherein the laser wavelength range is 300-;
(3) developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed;
(4) etching the dielectric layer by acid or alkali to expose the semiconductor layer at the opening position, wherein the acid is one or a mixture of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid, the etching of the dielectric layer is to respectively etch different dielectric layer areas on the surface of the photovoltaic device by adopting corresponding etching agents, and then attach the conductive material to the semiconductor surface at the opening position in an electrochemical deposition mode; or the conductive material is attached to the surface of the photovoltaic device with the partial opening on the transparent conductive oxide or the conductive seed layer with the opening in an electrochemical deposition mode, the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or more of nickel, copper, tin, silver, bismuth or indium which are overlapped or an alloy of the metals;
(5) and removing the mask material on the surface.
Fig. 4 is a cross-sectional view of a photovoltaic device with a transparent conductive oxide layer on its surface in example 2, wherein the process is not limited to one side of the cell, but can be a double-sided one, and the thickness of each layer is not actually relevant.
Example 3
A method for manufacturing a photovoltaic cell electrode comprises the following steps:
(1) depositing a liquid mask material containing a photosensitive component on the surface of the photovoltaic device with the surface being a conductive seed layer, wherein the deposition method of the mask material comprises any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating or ink-jet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000 cP; the conductive seed layer is any one of titanium, nickel, copper, nickel-vanadium alloy or titanium-tungsten alloy; the photovoltaic device is a heterojunction cell with the structure that the method is applied to at least the light receiving surface; (2) exposing partial area of the mask material to laser, wherein the laser wavelength range is 300-;
(3) developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed;
(4) etching the dielectric layer by acid or alkali to expose the semiconductor layer at the opening position, wherein the acid is one or a mixture of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid, the etching of the dielectric layer is to respectively etch different dielectric layer areas on the surface of the photovoltaic device by adopting corresponding etching agents, and then attach the conductive material to the semiconductor surface at the opening position in an electrochemical deposition mode; or the conductive material is attached to the surface of the photovoltaic device with the partial opening on the transparent conductive oxide or the conductive seed layer with the opening in an electrochemical deposition mode, the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or more of nickel, copper, tin, silver, bismuth or indium which are overlapped or an alloy of the metals;
(5) removing the mask material on the surface;
(6) and removing the conductive seed layer on the surface.
Fig. 5 is a cross-sectional view of the device and the process method for forming a conductive seed layer on the surface of the photovoltaic device in embodiment 3, where the process is not limited to one side of the battery, but may be a double-sided one, and the thicknesses of the layers in the schematic view are not actually related.
Example 4
A method for manufacturing a photovoltaic cell electrode comprises the following steps:
(1) depositing a liquid mask material containing a photosensitive component on the surface of a photovoltaic device with a dielectric layer or a transparent conductive oxide or a conductive seed layer on the surface, wherein the deposition method of the mask material comprises any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating or ink-jet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000 cP; the dielectric layer is any one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide or aluminum oxide, the transparent conductive oxide is any one of indium tin oxide, indium tungsten oxide, aluminum-doped zinc oxide, molybdenum oxide, tungsten-doped indium tin oxide, zirconium-doped tin oxide or zirconium-doped indium tin oxide, and the conductive seed layer is any one of titanium, nickel, copper, nickel-vanadium alloy or titanium-tungsten alloy; the photovoltaic device is a laminated cell of a PERC, a TOPCON, a heterojunction battery, a thin film battery or a crystalline silicon battery and a thin film battery, the structure of which at least applies the method on the light receiving surface, or a back contact battery, the structure of which only applies the method on the back light surface of the device, wherein the thin film battery is any one of perovskite, copper indium gallium selenide, copper zinc tin sulfide, gallium arsenide, indium phosphide or epitaxially grown silicon and germanium batteries;
(2) exposing partial area of the mask material to laser, wherein the laser wavelength range is 300-;
(3) developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed;
(4) etching the dielectric layer by acid or alkali to expose the semiconductor layer at the opening position, wherein the acid is one or a mixture of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid, the etching of the dielectric layer is to respectively etch different dielectric layer areas on the surface of the photovoltaic device by adopting corresponding etching agents, and then attach the conductive material to the semiconductor surface at the opening position in an electrochemical deposition mode; or the conductive material is attached to the surface of the photovoltaic device with the partial opening on the transparent conductive oxide or the conductive seed layer with the opening in an electrochemical deposition mode, the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or more of nickel, copper, tin, silver, bismuth or indium which are overlapped or an alloy of the metals;
(5) removing the mask material on the surface;
(6) heat treatment is performed to increase the bonding force of the electrochemically deposited metal with the device surface interface.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (16)
1. A method for manufacturing a photovoltaic cell electrode is characterized by comprising the following steps:
depositing a liquid mask material containing photosensitive components on the surface of a photovoltaic device with the surface being a dielectric layer or a transparent conductive oxide or a conductive seed layer;
exposing a partial region of the mask material to laser light, wherein the exposed region undergoes a chemical reaction;
developing to remove the mask material of the unexposed area from the surface of the photovoltaic device, so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, and a local opening of the mask material is formed;
etching the dielectric layer to expose the semiconductor layer at the opening position, and attaching a conductive material to the surface of the semiconductor at the opening position in an electrochemical deposition mode; or attaching a conductive material on the surface of the photovoltaic device with the partial opening by means of electrochemical deposition on the transparent conductive oxide or the conductive seed layer with the opening;
and removing the mask material on the surface.
2. The method of claim 1 for making a photovoltaic cell electrode, comprising: the deposition method of the mask material comprises any one of screen printing, roll coating, brush coating, slit coating, curtain coating, spray coating, spin coating, dip coating or ink jet printing.
3. The method of manufacturing a photovoltaic cell electrode according to claim 1, characterized in that: the viscosity of the mask material is 2-30000cP, and preferably 150-6000 cP.
4. The method of claim 1 for making a photovoltaic cell electrode, comprising: the dielectric layer is any one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide or aluminum oxide, the transparent conductive oxide is any one of indium tin oxide, indium tungsten oxide, aluminum-doped zinc oxide, molybdenum oxide, tungsten-doped indium tin oxide, zirconium-doped tin oxide or zirconium-doped indium tin oxide, and the conductive seed layer is any one of titanium, nickel, copper, nickel-vanadium alloy or titanium-tungsten alloy.
5. The method of claim 1 for making a photovoltaic cell electrode, comprising: the photovoltaic device is a PERC, TOPCON, heterojunction cell, thin film cell or laminated cell of a crystalline silicon cell and a thin film cell, the structure of which applies the method at least on the light receiving surface, or a back contact cell, the structure of which applies the method only on the back light surface of the device.
6. The method of claim 5, wherein the method comprises: the thin film battery is any one of perovskite, copper indium gallium selenide, copper zinc tin sulfide, gallium arsenide, indium phosphide or epitaxially grown silicon and germanium batteries.
7. The method of claim 1 for making a photovoltaic cell electrode, comprising: the method also comprises the step of drying the mask material after exposing partial area of the mask material under laser to cure the mask material in the exposure area.
8. The method of claim 1 for making a photovoltaic cell electrode, comprising: the exposure may be directed to areas of different materials on the surface of the photovoltaic device, respectively forming openings to deposit different metals.
9. The method of claim 1 for making a photovoltaic cell electrode, comprising: the laser wavelength range is 300-450nm, preferably 350-425 nm.
10. The method of claim 1 for making a photovoltaic cell electrode, comprising: the chemical reaction is any one of photopolymerization reaction or photocrosslinking reaction.
11. The method of claim 1 for making a photovoltaic cell electrode, comprising: the etching of the dielectric layer is acid or alkali etching, and the acid is one or the mixture of two or more of hydrofluoric acid, ammonium fluoride, hydrochloric acid, sulfuric acid and nitric acid.
12. The method of claim 1 for making a photovoltaic cell electrode, comprising: the etching of the dielectric layer is respectively etching different dielectric layer areas on the surface of the photovoltaic device by adopting corresponding etching agents, or electrochemical anodic oxidation treatment, or laser ablation, or plasma bombardment etching.
13. The method of claim 1 for making a photovoltaic cell electrode, comprising: the electrochemical deposition mode is electroplating or chemical plating, and the electrochemically deposited metal is any one or two or more of nickel, copper, tin, silver, bismuth or indium, or an alloy of more than two metals.
14. The method of claim 1 for making a photovoltaic cell electrode, comprising: the method further comprises removing the conductive seed layer after removing the mask material on the surface of the device.
15. The method of claim 1 for making a photovoltaic cell electrode, comprising: the method also comprises the step of further carrying out heat treatment after the mask material on the surface of the device is removed.
16. A photovoltaic cell prepared by the method of claims 1-14.
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| CN202311338915.9A CN117393646A (en) | 2021-03-02 | 2021-03-02 | Manufacturing method of photovoltaic cell electrode |
| PCT/CN2022/078530 WO2022184038A1 (en) | 2021-03-02 | 2022-03-01 | Manufacturing method for electrode of photovoltaic cell, and photovoltaic cell |
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| WO2022184038A1 (en) * | 2021-03-02 | 2022-09-09 | 苏州太阳井新能源有限公司 | Manufacturing method for electrode of photovoltaic cell, and photovoltaic cell |
| CN115148852A (en) * | 2022-06-30 | 2022-10-04 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
| WO2023061151A1 (en) * | 2021-10-13 | 2023-04-20 | 隆基绿能科技股份有限公司 | Solar cell preparation method and solar cell |
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| CN116864582B (en) * | 2023-09-04 | 2023-12-05 | 苏州优备精密智能装备股份有限公司 | Method for preparing circuit on surface of solar silicon wafer |
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