CN101593693A - Make the method for high-voltage bidirectional diac - Google Patents
Make the method for high-voltage bidirectional diac Download PDFInfo
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Abstract
The present invention relates to a kind of method of making the high-voltage bidirectional diac, this method is handled the raw material silicon chip by following steps in sequence: after chemical polishing → boron diffusion → mask oxidation → two-sided photoetching → phosphorous diffusion → nickel plating and the alloying → scribing → welding → pickling → protection → encapsulation, make high-voltage bidirectional diac finished product; Its chemical polishing step is with corrosive liquid homogeneous corrosion after 3～5 minutes at normal temperatures with the raw material silicon chip, through repeatedly cleaning the also dry surperficial silicon chip of inferior light (1) that is that obtains, wherein used corrosive liquid is formed by 1: 1 by volume～3: 25～30 mixing of hydrofluoric acid, glacial acetic acid and nitric acid; Its acid pickling step is silicon chip (1) periphery that obtains with mix acid liquor immersion corrosion welding step, form corrosion layer (8) and obtain electrical property, wherein used mix acid liquor is formed by the mixing in 9: 9: 9 by volume～15: 4 of hydrofluoric acid, nitric acid, acetate and sulfuric acid.Operation is simplified, and cost is low, dependable performance, the anti-ablation.
Description
Technical field
The present invention relates to a kind of method of making the high-voltage bidirectional diac, the diode that makes is specially adapted to the startup of high pressure neon lamp and lights in the field of circuit.
Background technology
At present, electrical apparatus industry, high voltage integrated towards height, powerful direction develop.Existing method of making the high-voltage bidirectional diac, comprise chemistry and mechanical polishing, boron diffusion, oxidation, a photoetching, phosphorous diffusion, secondary photoetching, glass burn be coated with, the secondary glass burning is coated with, third photo etching, evaporated metal, scribing, pickling and encapsulation, just can make product.There is following shortcoming in existing manufacture method: 1. since needs repeatedly glass burn and to be coated with and repeatedly photoetching, thereby making step is various, complicated; 2. be chemistry and mechanical polishing owing to what adopt, not only production cost is higher, also can damage silicon chip; 3. because photoetching must be made in 1000 grades or higher environment, thereby manufacturing conditions has relatively high expectations, and also causes the cost height; 4. because superficial with the PN junction junction depth of the diode chip for backlight unit that has the technology making now, anti-ablation ability is lower, makes that the reliability of diode is lower.
Summary of the invention
The objective of the invention is: the method that the making high-voltage bidirectional diac that a kind of operational sequence is simplified, production cost is low, the product electrical property improves is provided.
The technical scheme that realizes the object of the invention is: a kind of method of making the high-voltage bidirectional diac, its characteristics are, handle the raw material silicon chip by following steps in sequence: after chemical polishing → boron diffusion → mask oxidation → two-sided photoetching → phosphorous diffusion → nickel plating and the alloying → scribing → welding → pickling → protection → encapsulation, make high-voltage bidirectional diac finished product; Described chemical polishing step is with corrosive liquid homogeneous corrosion after 3～5 minutes at normal temperatures with the raw material silicon chip, through repeatedly cleaning the also dry surperficial silicon chip of inferior light that is that obtains, wherein used corrosive liquid is formed by 1: 1 by volume～3: 25～30 mixing of hydrofluoric acid, glacial acetic acid and nitric acid; Described acid pickling step is the periphery of the silicon chip that obtains with mix acid liquor immersion corrosion welding step, forms corrosion layer and obtains electrical property, and wherein used mix acid liquor was mixed by hydrofluoric acid, nitric acid, acetate and sulfuric acid and forms in 9: 9: 9 by volume～15: 4.
In the said method, the major control condition of described step is as follows: the diffused layer of boron thickness that described boron diffusion step forms is 60 ± 5 μ m; The oxide thickness that described mask oxidation step forms is at least 1.2 μ m; A described two-sided lithography step is to carry out dual surface lithography at least under 10,000 grades of environment purifications, form first litho pattern and second litho pattern, its size is 400 μ m * 800 μ m, and the horizontal vertical distance in the inboard sideline of first litho pattern and second litho pattern is 0.05mm～0.3mm; Described phosphorous diffusion step is that phosphorus atoms diffuses to form phosphorus-diffused layer in first litho pattern and second litho pattern, and its thickness is 15～18 μ m; Described nickel plating and alloying step are earlier to use the rinsing liquid rinsing, form nickel metal layer with nickel-plating liquid again, and its thickness is 3～4 μ m, and the silicon chip with nickel metal layer that will obtain is then put into 600 ± 3 ℃ nitrogen furnace and finished alloying.
In the said method, the rinsing liquid that described nickel plating and alloying step are used by hydrofluoric acid and deionized water by hydrofluoric acid: deionized water=1ml: 15ml forms; The nickel-plating liquid that nickel plating is used is made up of A liquid and B liquid, the proportioning of A liquid and B liquid is 4L: 140～180ml, wherein A liquid is the mixed liquor of nickel chloride, ammonium chloride, diammonium hydrogen citrate, inferior sodium phosphate and deionized water, its proportioning is a nickel chloride: ammonium chloride: diammonium hydrogen citrate: inferior sodium phosphate: deionized water=30g: 50g: 65g: 10g: 1000ml, B liquid is ammoniacal liquor.
Described raw material silicon chip is to be cut into round silicon chip by N type monocrystal rod through line, its electricalresistivity=4 ± 1 Ω .cm, and thickness is 200 ± 10 μ m.
The concrete operations of said method are as follows:
(1) prepare raw material:
1. prepare silicon chip: the N type monocrystal rod of buying is cut into circle as the raw material silicon chip through line, its electricalresistivity=4 ± 1 Ω .cm, thickness is 200 ± 10 μ m;
2. prepare the corrosive liquid that the chemical polishing step is used: mix by hydrofluoric acid, glacial acetic acid and nitric acid volume ratio 1: 1～3: 25～30;
3. prepare the rinsing liquid that nickel plating and alloying step are used: by hydrofluoric acid: the proportioning of deionized water=1: 15 mixes;
4. prepare the nickel-plating liquid A liquid that nickel plating and alloying step are used: by nickel chloride: ammonium chloride: diammonium hydrogen citrate: inferior sodium phosphate: deionized water=30g: 50g: 65g: 10g: the 1000ml proportioning mixes;
5. prepare the mix acid liquor that acid pickling step uses: mixed in 9: 9: 9～15: 4 by hydrofluoric acid, nitric acid, acetic acid and sulfuric acid volume ratio;
6. prepare the corrosive liquid that lithography step uses: by hydrofluoric acid: ammonium fluoride: water=mix at 3: 6: 9;
7. the silicon rubber of using buying is as protection glue; With the buying epoxy molding plastic as encapsulating compound;
(2) handle the raw material silicon chip by following steps in sequence:
(a) chemical polishing:
The raw material silicon chip is put into corrosive liquid, homogeneous corrosion is after 3～5 minutes at normal temperatures, putting into cleaning machine cleans repeatedly, and then put into potcher and wash with deionized water at normal temperature, silicon chip is dried, put into oven drying half an hour at least of 90～110 ℃ again, take out and obtain the surface and be the silicon chip of inferior light;
(b) boron diffusion:
Boron paper of folder between the silicon chip that per two steps (a) obtain after the quartz boat of packing into is interior, is sent in the diffusion furnace, and the diffusion furnace temperature is set in 1240 ± 1 ℃, till the upper and lower surface at silicon chip all forms the diffused layer of boron that thickness is 60 ± 5 μ m;
(c) mask oxidation:
The silicon chip with diffused layer of boron that step (b) obtains is sent in the high temperature furnace, adopted the mode of dried oxygen, wet oxygen and dried oxygen, form oxide-film on the diffused layer of boron surface, its thickness is at least 1.2 μ m;
(d) a two-sided photoetching:
The upper surface and the lower surface of the silicon chip with oxide-film that step (c) is obtained are spared glue, put into baking oven then, prebake, after the baking, in at least 1 ten thousand grade of environment purification, carry out dual surface lithography, develop, post bake, cooling, erode the oxide-film at litho pattern position then with the photoetching corrosive liquid, reusable heat nitric acid removes photoresist and cleans, clean once more at last, the upper surface and the lower surface of the silicon chip with oxide-film that obtains in step (c) form first litho pattern and second litho pattern, its size is 400 μ m * 800 μ m, and the horizontal vertical distance in the inboard sideline of first litho pattern and second litho pattern is 0.05mm～0.3mm;
(e) phosphorous diffusion:
Phosphorus paper of folder between the silicon chip after the photoetching that per two steps (d) obtain, phosphorus paper is placed on the litho pattern surface, after the quartz boat of packing into is interior, send in the diffusion furnace, the temperature of diffusion furnace is set in 1160 ± 1 ℃, phosphorus atoms spreads in first litho pattern and second litho pattern, till formation thickness is the phosphorus-diffused layer of 15～18 μ m;
(f) nickel plating and alloying:
Silicon chip after the phosphorous diffusion that step (e) is obtained, erode the remaining oxide-film in diffused layer of boron surface with the photoetching corrosive liquid earlier, after using deionized water rinsing, rinsing liquid rinsing, deionized water rinsing then successively, immerse temperature and be in 70～90 ℃ the A liquid of nickel-plating liquid, the B liquid that adds nickel-plating liquid makes the pH value of nickel-plating liquid reach 8, the upper and lower outmost surface of the silicon chip after phosphorous diffusion forms nickel metal layer, its thickness is 3～4 μ m, and the silicon chip with nickel metal layer that will obtain is then put into 600 ± 3 ℃ nitrogen furnace and finished alloying;
(g) scribing:
Silicon chip after the alloying that step (f) is obtained is put into scribing machine, cuts by predefined size;
(h) welding:
The upper and lower outmost surface of the silicon chip after the cutting that step (g) obtains is welded the electrode that copper band goes between with welding compound;
(i) pickling:
The silicon chip periphery that has electrode that obtains with mix acid liquor immersion corrosion step (h) forms corrosion layer and obtains electrical property;
(j) protection:
Corrosion layer to step (i) obtains covers with protection glue, stablizes acquired electrical property;
(k) encapsulation:
With encapsulating compound the semi-finished product that step (j) obtains are encapsulated, except the part lead-in wire was exposed, the whole packed material packages of remainder were wrapped up in, and form packaging body after the moulding, thereby make finished product high-voltage bidirectional diac.
Technique effect of the present invention is: owing to only need can obtain the high-voltage bidirectional diac by chemical polishing → boron diffusion → mask oxidation → two-sided photoetching → phosphorous diffusion → nickel plating and alloying → scribing → welding → pickling → protection → encapsulation, simplified operational sequence, thereby the total cost of manufacture method of the present invention is 1/3rd of existing manufacture method total cost approximately; Owing to adopt chemical polishing technology, not only reduced production cost, also guarantee not damage silicon chip; Owing to adopt a dual surface lithography, and in 10,000 grades environment purification, carry out photoetching, just can obtain voltage (230V) and be higher than the diode product that makes with existing method, not only reduced manufacturing and required, reduced cost, also improved product quality; Owing to the periphery of the silicon chip that welding step is obtained has been carried out pickling formation corrosion layer, thereby the junction depth of chip is deep, has strengthened the anti-ablation ability of chip, has improved chip reliability.
Description of drawings
Fig. 1 is a kind of structural representation of the high-voltage bidirectional diac of the inventive method making.
Embodiment
Below in conjunction with drawings and Examples, manufacture method of the present invention is described in further detail, but is not limited to this.
Embodiment is unless otherwise indicated raw materials used, is the conventional raw material that uses of semicon industry and is commercially available product.Wherein used phosphorus paper main component is a phosphorous oxide, and specification is p75xk; Used boron paper main component is a boron, and specification is B40xto.
Embodiment: make the high-voltage bidirectional diac
(1) prepare raw material:
1. prepare silicon chip: the N type monocrystal rod of buying is cut into circle as the raw material silicon chip through line, its electricalresistivity=4 ± 1 Ω .cm, thickness is 200 ± 10 μ m;
2. prepare the corrosive liquid that the chemical polishing step is used: by hydrofluoric acid, glacial acetic acid and nitric acid volume ratio 1: 1: 2: 27 mix;
3. prepare the rinsing liquid that nickel plating and alloying step are used: by hydrofluoric acid: the proportioning of deionized water=1: 15 mixes;
4. prepare the nickel-plating liquid A liquid that nickel plating and alloying step are used: by nickel chloride: ammonium chloride: diammonium hydrogen citrate: inferior sodium phosphate: deionized water=30g: 50g: 65g: 10g: the 1000ml proportioning mixes;
5. prepare the mix acid liquor that acid pickling step uses: by hydrofluoric acid, nitric acid, acetic acid and sulfuric acid volume ratio 9: 9: 12: 4 mix;
6. prepare the corrosive liquid that lithography step uses: by hydrofluoric acid: ammonium fluoride: water=mix at 3: 6: 9;
7. the silicon rubber of using buying is as protection glue; With the buying epoxy molding plastic as encapsulating compound;
(2) handle the raw material silicon chip by following steps in sequence:
(a) chemical polishing:
The raw material silicon chip is put into corrosive liquid, homogeneous corrosion is after 3～5 minutes at normal temperatures, putting into cleaning machine cleans repeatedly promptly: inject 70～90 ℃ of cleaning solutions, ultrasonic waves for cleaning 20 minutes, deionized water changed the water flushing more than 5 minutes, 1: 1 hydrofluoric acid aqueous solution rinsing 1 minute, deionized water is from moving the water flushing more than three times; Inject 70～90 ℃ of cleaning solutions in the cleaning machine, ultrasonic waves for cleaning 20 minutes, deionized water is from moving the water flushing more than three times; Inject 70～90 ℃ of deionized waters in the cleaning machine, ultrasonic waves for cleaning 20 minutes, deionized water is from moving the water flushing more than three times; Inject 70～90 ℃ of deionized waters, ultrasonic waves for cleaning 20 minutes, hydrofluoric acid aqueous solution rinsing in 1: 9 30 seconds in the cleaning machine; And then put into potcher and wash at least 8 times with deionized water at normal temperature, silicon chip is dried, put into oven drying half an hour at least of 90～110 ℃ again, take out and obtain the surface and be the silicon chip 1 of inferior light;
(b) boron diffusion:
Boron paper of folder between the silicon chip 1 after the chemical polishing that per two steps (a) obtain, after the quartz boat of packing into is interior, send in the diffusion furnace, the diffusion furnace temperature is set in 1240 ± 1 ℃, till the upper and lower surface at the silicon chip after the chemical polishing 1 all forms the diffused layer of boron 2 that thickness is 60 ± 5 μ m;
(c) mask oxidation:
The silicon chip with diffused layer of boron 21 that step (b) obtains is sent in the high temperature furnace, adopted the mode of dried oxygen, wet oxygen and dried oxygen, form oxide-film on diffused layer of boron 2 surfaces, its thickness is at least 1.2 μ m;
(d) a two-sided photoetching:
The upper surface and the lower surface of the silicon chip with oxide-film 1 that step (c) is obtained are spared glue, put into baking oven then, prebake, after the baking, in at least 1 ten thousand grade of environment purification, carry out dual surface lithography, develop, post bake, cooling, erode the oxide-film at litho pattern position then with the photoetching corrosive liquid, reusable heat nitric acid removes photoresist and cleans, clean once more at last, the upper surface and the lower surface of the silicon chip with oxide-film 1 that obtains in step (c) form the first litho pattern 3-1 and the second litho pattern 3-2, its size is 400 μ m * 800 μ m, the first litho pattern 3-1 and the second litho pattern 3-2, the horizontal vertical distance in both inboard sidelines is 0.1mm;
(e) phosphorous diffusion:
Phosphorus paper of folder between the silicon chip 1 after the photoetching that per two steps (d) obtain, phosphorus paper is placed on the first litho pattern 3-1 and the second litho pattern 3-2 surface, after the quartz boat of packing into is interior, send in the diffusion furnace, the temperature of diffusion furnace is set in 1160 ± 1 ℃, phosphorus atoms spreads in the first litho pattern 3-1 and the second litho pattern 3-2, till formation thickness is the phosphorus-diffused layer 4 of 15～18 μ m;
(f) nickel plating and alloying:
(g) sheet:
(h) welding:
The upper and lower outmost surface of the silicon chip 1 after the cutting that step (g) obtains is with the electrode 7 of the copper band lead-in wire of welding compound 6 welding 7-1;
(i) pickling:
The silicon chip that has electrode 1 periphery with mix acid liquor immersion corrosion step (h) obtains forms corrosion layer 8 and the acquisition electrical property;
(j) protection:
(k) encapsulation:
With encapsulating compound the semi-finished product that step (j) obtains are encapsulated, except the 7-1 that partly goes between was exposed, the whole packed material packages of remainder were wrapped up in, and formed packaging body 10 after the moulding, thereby made finished product high-voltage bidirectional diac.
In the manufacture method of the present invention, nickel plating and alloying step also can adopt existing gold-plated, silver-plated or platinum coating method replacement nickel plating according to customer requirement, and then alloying.
Claims (5)
1, a kind of method of making the high-voltage bidirectional diac, it is characterized in that, handle the raw material silicon chip by following steps in sequence: after chemical polishing → boron diffusion → mask oxidation → two-sided photoetching → phosphorous diffusion → nickel plating and the alloying → scribing → welding → pickling → protection → encapsulation, make high-voltage bidirectional diac finished product;
Described chemical polishing step is with corrosive liquid homogeneous corrosion after 3～5 minutes at normal temperatures with the raw material silicon chip, through repeatedly cleaning the also dry surperficial silicon chip of inferior light (1) that is that obtains, wherein used corrosive liquid is formed by 1: 1 by volume～3: 25～30 mixing of hydrofluoric acid, glacial acetic acid and nitric acid;
Described acid pickling step is the periphery of the silicon chip (1) that obtains with mix acid liquor immersion corrosion welding step, form corrosion layer (8) and obtain electrical property, wherein used mix acid liquor is formed by the mixing in 9: 9: 9 by volume～15: 4 of hydrofluoric acid, nitric acid, acetate and sulfuric acid.
2, method according to claim 1 is characterized in that, the major control condition of described step is as follows:
Diffused layer of boron (2) thickness that described boron diffusion step forms is 60 ± 5 μ m;
The oxide thickness that described mask oxidation step forms is at least 1.2 μ m;
A described two-sided lithography step is to carry out dual surface lithography at least under 10,000 grades of environment purifications, form first litho pattern (3-1) and second litho pattern (3-2), its size is 400 μ m * 800 μ m, and the horizontal vertical distance in first litho pattern (3-1) and both inboard sidelines of second litho pattern (3-2) is 0.05mm～0.3mm;
Described phosphorous diffusion step is that phosphorus atoms diffuses to form phosphorus-diffused layer (4) in first litho pattern (3-1) and second litho pattern (3-2), and its thickness is 15～18 μ m;
Described nickel plating and alloying step are to use the rinsing liquid rinsing earlier, form nickel metal layer (5) with nickel-plating liquid again, and its thickness is 3～4 μ m, puts into 600 ± 3 ℃ nitrogen furnace and finishes alloying.
3, method according to claim 2 is characterized in that, the rinsing liquid that described nickel plating and alloying step are used by hydrofluoric acid and deionized water by hydrofluoric acid: deionized water=1ml: 15ml forms; The nickel-plating liquid that nickel plating is used is made up of A liquid and B liquid, the proportioning of A liquid and B liquid is 4L: 140～180ml, wherein A liquid is the mixed liquor of nickel chloride, ammonium chloride, diammonium hydrogen citrate, inferior sodium phosphate and deionized water, its proportioning is a nickel chloride: ammonium chloride: diammonium hydrogen citrate: inferior sodium phosphate: deionized water=30g: 50g: 65g: 10g: 1000ml, B liquid is ammoniacal liquor.
4, method according to claim 1 is characterized in that, described raw material silicon chip is to be cut into circular silicon chip by N type monocrystal rod through line, its electricalresistivity=4 ± 1 Ω .cm, and thickness is 200 ± 10 μ m.
5, method according to claim 1 is characterized in that, concrete operations are as follows:
(1) prepare raw material:
1. prepare silicon chip: the N type monocrystal rod of buying is cut into circle as the raw material silicon chip through line, its electricalresistivity=4 ± 1 Ω .cm, thickness is 200 ± 10 μ m;
2. prepare the corrosive liquid that the chemical polishing step is used: mix by hydrofluoric acid, glacial acetic acid and nitric acid volume ratio 1: 1～3: 25～30;
3. prepare the rinsing liquid that nickel plating and alloying step are used: by hydrofluoric acid: the proportioning of deionized water=1: 15 mixes;
4. prepare the nickel-plating liquid A liquid that nickel plating and alloying step are used: by nickel chloride: ammonium chloride: diammonium hydrogen citrate: inferior sodium phosphate: deionized water=30g: 50g: 65g: 10g: the 1000ml proportioning mixes;
5. prepare the mix acid liquor that acid pickling step uses: mixed in 9: 9: 9～15: 4 by hydrofluoric acid, nitric acid, acetic acid and sulfuric acid volume ratio;
6. prepare the corrosive liquid that lithography step uses: by hydrofluoric acid: ammonium fluoride: water=mix at 3: 6: 9;
7. the silicon rubber of using buying is as protection glue; With the buying epoxy molding plastic as encapsulating compound;
(2) handle the raw material silicon chip by following steps in sequence:
(a) chemical polishing:
The raw material silicon chip is put into corrosive liquid, homogeneous corrosion is after 3～5 minutes at normal temperatures, putting into cleaning machine cleans repeatedly, and then put into potcher and wash with deionized water at normal temperature, silicon chip is dried, put into oven drying half an hour at least of 90～110 ℃ again, take out and obtain the surface and be the silicon chip of inferior light (1);
(b) boron diffusion:
Boron paper of folder between the silicon chip (1) after the chemical polishing that per two steps (a) obtain, after the quartz boat of packing into is interior, send in the diffusion furnace, the diffusion furnace temperature is set in 1240 ± 1 ℃, till the upper and lower surface at the silicon chip after the chemical polishing (1) all forms the diffused layer of boron that thickness is 60 ± 5 μ m (2);
(c) mask oxidation:
The silicon chip with diffused layer of boron (2) (1) that step (b) obtains is sent in the high temperature furnace, adopted the mode of dried oxygen, wet oxygen and dried oxygen, form oxide-film on diffused layer of boron (2) surface, its thickness is at least 1.2 μ m;
(d) a two-sided photoetching:
The upper surface and the lower surface of the silicon chip with oxide-film (1) that step (c) is obtained are spared glue, put into baking oven then, prebake, after the baking, in at least 1 ten thousand grade of environment purification, carry out dual surface lithography, develop, post bake, cooling, erode the oxide-film at litho pattern position then with the photoetching corrosive liquid, reusable heat nitric acid removes photoresist and cleans, clean once more at last, the upper surface and the lower surface of the silicon chip with oxide-film (1) that obtains in step (c) form first litho pattern (3-1) and second litho pattern (3-2), its size is 400 μ m * 800 μ m, and the horizontal vertical distance in first litho pattern (3-1) and both inboard sidelines of second litho pattern (3-2) is 0.05mm～0.3mm;
(e) phosphorous diffusion:
Phosphorus paper of folder between the silicon chip (1) after the photoetching that per two steps (d) obtain, phosphorus paper is placed on first litho pattern (3-1) and second litho pattern (3-2) surface, after the quartz boat of packing into is interior, send in the diffusion furnace, the temperature of diffusion furnace is set in 1160 ± 1 ℃, phosphorus atoms spreads in first litho pattern (3-1) and second litho pattern (3-2), till formation thickness is the phosphorus-diffused layer (4) of 15～18 μ m;
(f) nickel plating and alloying:
Silicon chip (1) after the phosphorous diffusion that step (e) is obtained, earlier erode the surperficial remaining oxide-film of diffused layer of boron (2) with the photoetching corrosive liquid, use deionized water rinsing then successively, the rinsing liquid rinsing, behind the deionized water rinsing, immerse temperature and be in 70～90 ℃ the A liquid of nickel-plating liquid, the B liquid that adds nickel-plating liquid makes the pH value of nickel-plating liquid reach 8, on the silicon chip after the phosphorous diffusion (1), following outmost surface forms nickel metal layer (5), its thickness is 3～4 μ m, and the silicon chip with nickel metal layer (5) (1) that will obtain is then put into 600 ± 3 ℃ nitrogen furnace and finished alloying;
(g) scribing:
Silicon chip (1) after the alloying that step (f) is obtained is put into scribing machine, cuts by predefined size;
(h) welding:
The upper and lower outmost surface of the silicon chip (1) after the cutting that step (g) obtains is with the electrode (7) of welding compound (6) the copper band lead-in wire of welding (7-1);
(i) pickling:
The silicon chip that has electrode (7) (1) periphery with mix acid liquor immersion corrosion step (h) obtains forms corrosion layer (8) and the acquisition electrical property;
(j) protection:
Corrosion layer (8) to step (i) obtains covers with protection glue (9), stablizes acquired electrical property;
(k) encapsulation:
With encapsulating compound the semi-finished product that step (j) obtains are encapsulated, except part lead-in wire (7-1) was exposed, the whole packed material packages of remainder were wrapped up in, and form packaging body (10) after the moulding, thereby make finished product high-voltage bidirectional diac.
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| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102214570B (en) * | 2010-04-04 | 2015-06-24 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN101969054A (en) * | 2010-08-20 | 2011-02-09 | 常州银河电器有限公司 | Semiconductor chip and preparation method thereof |
| CN101969054B (en) * | 2010-08-20 | 2012-01-18 | 常州银河电器有限公司 | Semiconductor chip and preparation method thereof |
| CN102129985A (en) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | Manufacturing method of glass-sealed two-way trigger diode chip |
| CN102157376A (en) * | 2010-12-30 | 2011-08-17 | 常州星海电子有限公司 | Glass passivation process for diode |
| CN102244104A (en) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102244104B (en) * | 2011-07-07 | 2013-05-22 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102569065A (en) * | 2011-12-23 | 2012-07-11 | 重庆平伟实业股份有限公司 | Acid washing process of diode chip |
| CN102569044B (en) * | 2011-12-24 | 2014-07-30 | 常州星海电子有限公司 | Manufacture method of diode SF chip |
| CN102569044A (en) * | 2011-12-24 | 2012-07-11 | 常州星海电子有限公司 | Manufacture method of diode SF chip |
| CN103227105A (en) * | 2013-03-29 | 2013-07-31 | 昆山东日半导体有限公司 | Phosphorus attaching and boron applying technology |
| CN105977154A (en) * | 2016-06-06 | 2016-09-28 | 北京时代民芯科技有限公司 | Diffusion-technology-based manufacture method for fast recovery diode chip having double buffering layers |
| CN105977154B (en) * | 2016-06-06 | 2019-04-02 | 北京时代民芯科技有限公司 | One kind having double-buffering layer fast recovery diode chip manufacturing method based on diffusion technique |
| CN106449358A (en) * | 2016-07-07 | 2017-02-22 | 如皋市大昌电子有限公司 | Preparation technology of diode |
| CN107316811A (en) * | 2017-05-23 | 2017-11-03 | 如皋市下原科技创业服务有限公司 | A kind of production technology of diode |
| CN109830577A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | A kind of manufacturing method of high quality light-emitting diode |
| CN109830577B (en) * | 2019-01-18 | 2021-06-15 | 深圳市广盛浩科技有限公司 | Manufacturing method of high-quality light-emitting diode |
| CN114843180A (en) * | 2022-05-03 | 2022-08-02 | 江苏晟驰微电子有限公司 | Chemical corrosion junction removing equipment and process for manufacturing rectifier tube |
| CN114843180B (en) * | 2022-05-03 | 2023-03-31 | 江苏晟驰微电子有限公司 | Chemical corrosion junction removing equipment for manufacturing rectifier tube and process thereof |
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