CN101593654A - A kind of front panel of plasma display and manufacture method thereof - Google Patents
A kind of front panel of plasma display and manufacture method thereof Download PDFInfo
- Publication number
- CN101593654A CN101593654A CNA2008101132036A CN200810113203A CN101593654A CN 101593654 A CN101593654 A CN 101593654A CN A2008101132036 A CNA2008101132036 A CN A2008101132036A CN 200810113203 A CN200810113203 A CN 200810113203A CN 101593654 A CN101593654 A CN 101593654A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- glass
- zno
- glass substrate
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Gas-Filled Discharge Tubes (AREA)
- Glass Compositions (AREA)
Abstract
The present invention relates to a kind of front panel of plasma display and manufacture method thereof.Front panel of plasma display of the present invention comprises: glass substrate; First dielectric layer is arranged on the glass substrate; Silver electrode is arranged on first dielectric layer; Second transparent dielectric layer is arranged on the glass substrate and covers silver electrode; Wherein, the pattern part of corresponding at least silver electrode is provided with first dielectric layer between glass substrate and the silver electrode.The method that the present invention makes front panel of plasma display comprises the steps: A) on glass substrate, make first dielectric layer with first dielectric material; B) on first dielectric layer, produce silver electrode; C) on glass substrate, make second transparent dielectric layer to cover silver electrode.Inorganic base in first dielectric material contains 0.05%～1% CuO by weight.First dielectric layer among the present invention can prevent the bubble of aetiolation, reduction and electrode reaction generation that the silver diffusion brings.
Description
Technical field
The present invention relates to a kind of front panel of plasma display and manufacture method thereof.
Background technology
The PDP display screen is by forward and backward substrate and be produced on function elements such as electrode on the substrate, barrier, medium, fluorescent material and form.PDP dedicated substrate prices such as PD200 by the development of companies such as Japan AGC are comparatively expensive, and in order to reduce product cost, base plate glass is selected soda-lime glass with low cost usually for use.
PDP need utilize discharge excitation inert gas generation ultraviolet ray between electrode, and wherein the most frequently used electrode material is photosensitive silver paste.It is cheap relatively that photosensitive silver paste has a cost, and electric conductivity is stable, is the electrode material of display device first-selection.
Utilize photosensitive silver paste to make silver electrode from cost consideration, yet silver is easy to pass electrode black matrix and glass effect, forms aetiolation, reduce the brightness of display device, contrast, the colour temperature of change chromatic display at glass surface at glass substrate.
For this reason, the aetiolation that occurs in glass baseplate surface formation silver electrode with low cost becomes the difficult problem that needs solve.
Summary of the invention
The object of the invention is to provide a kind of front panel of plasma display and manufacture method thereof, by increase one deck dielectric layer between glass substrate and silver electrode, can effectively solve the aetiolation that silver electrode causes glass baseplate surface.
One aspect of the present invention relates to a kind of front panel of plasma display, comprising:
-glass substrate;
-the first dielectric layer is arranged on the glass substrate;
-silver electrode is arranged on first dielectric layer;
-second transparent dielectric layer is arranged on the glass substrate and covers silver electrode;
Wherein, the pattern part of corresponding at least silver electrode is provided with first dielectric layer between glass substrate and the silver electrode.
The inorganic base that constitutes first dielectric layer contains 0.05%～1% CuO by weight, and the inorganic base that constitutes second dielectric layer alternatively contains 0.05%～1% CuO by weight.
Inorganic base is a glass, preferred seal glass, more preferably low-melting point sealing glass, most preferably crown glass.
Inorganic base is selected from following at least a glass: PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3System, Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na or K in system; R ' is Ba or Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5, B
2O
3-ZnO-V
2O
5System, SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5System, Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2Be glass.
Inorganic base contains 20%～60% SiO by weight
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO.
The inorganic base that constitutes first dielectric layer also contains 10%～30% Co-Cr-Fe mixed oxide.
Preferred first dielectric layer is the black dielectric layer, and as the electrode black matrix, alternatively also as secret note.
Inorganic base contains 15%～40% B by weight
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.
Preferred first dielectric layer is a transparent dielectric layer.
Preferred first thickness of dielectric layers is 1～5 μ m.
The preferred glass substrate is the soda-lime glass substrate.
Front panel of plasma display of the present invention further comprises: diaphragm is arranged on second dielectric layer.
Another aspect of the present invention relates to the method for making front panel of plasma display, and method adopts following steps:
A) on glass substrate, make first dielectric layer with first dielectric material;
B) on first dielectric layer, produce silver electrode;
C) on glass substrate, make second transparent dielectric layer to cover silver electrode with second dielectric material;
Wherein, the pattern part of corresponding at least silver electrode is provided with first dielectric layer between glass substrate and the silver electrode.
Inorganic base in first dielectric material contains 0.05%～1% CuO by weight, and the inorganic base in second dielectric material contains 0.05%～1% CuO by weight alternatively.
Inorganic base is a glass, preferred seal glass, more preferably low-melting point sealing glass, most preferably crown glass.
Inorganic base is selected from following at least a glass: PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3System, Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na or K in system; R ' is Ba or Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5, B
2O
3-ZnO-V
2O
5System, SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5System, Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2Be glass.
Inorganic base contains 15%～40% B by weight
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.
Inorganic base contains 20%～60% SiO by weight
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO.
Inorganic base in first dielectric material also contains 10%～30% Co-Cr-Fe mixed oxide.
The method of preferred fabrication first dielectric layer may further comprise the steps:
A1) on glass substrate, apply first layer of dielectric material;
A2) glass substrate that will have first layer of dielectric material carries out drying;
A3) dried first layer of dielectric material is carried out sintering.
The method of preferred fabrication first dielectric layer may further comprise the steps:
A1) on glass substrate, apply photosensitive first dielectric material;
A2) glass substrate that will have photosensitive first dielectric material carries out drying;
A3) with photosensitive first layer of dielectric material exposure;
A4) develop;
A5) first layer of dielectric material after will developing is carried out sintering.
Beneficial effect
A) solved the glass substrate aetiolation.
B) greatly reduce the glass substrate cost, promoted product competitiveness.
C) technology is simple, need not extra process equipment.
Description of drawings
Fig. 1 is the perspective view of front panel of plasma display first embodiment of the present invention.
Fig. 2 is the perspective view of front panel of plasma display second embodiment of the present invention.
Embodiment
In the present invention, except that specializing, all content, percentage, umber all are in weight (quality).
One aspect of the present invention relates to a kind of front panel of plasma display, comprising:
-glass substrate;
-the first dielectric layer is arranged on the glass substrate;
-silver electrode is arranged on first dielectric layer;
-second transparent dielectric layer is arranged on the glass substrate and covers silver electrode;
Wherein, the pattern part of corresponding at least silver electrode is provided with first dielectric layer between glass substrate and the silver electrode.
The pattern part of corresponding at least silver electrode is provided with first dielectric layer between glass substrate and the silver electrode.In a kind of preferred embodiment, between glass substrate and the silver electrode only the pattern part of corresponding silver electrode be provided with first dielectric layer.In another kind of embodiment, be arranged on the whole glass substrate at first dielectric layer between glass substrate and the silver electrode.
Preferred front panel of plasma display of the present invention further comprises: diaphragm is arranged on second dielectric layer.Diaphragm is preferably the magnesium oxide diaphragm.
The thickness of first dielectric layer has no particular limits, and arrives glass substrate as long as can block silver ion.For example, the thickness of first dielectric layer can be 1 μ m～6 μ m.
The inorganic base of second dielectric layer and first dielectric layer can be identical, also can be different.Consider cost and simplify technology, the inorganic base of preferred second dielectric layer is identical with the inorganic base of first dielectric layer.
First dielectric layer can be a transparent dielectric layer, also can be the black dielectric layer.At first dielectric layer is under the situation of transparent dielectric layer, and first dielectric layer can be arranged on the whole glass substrate.At first dielectric layer is under the situation of black dielectric layer, and the pattern setting of the corresponding silver electrode of first dielectric layer is preferably served as black matrix, more preferably serves as black matrix and secret note simultaneously.Certainly, also traditional black matrix can be formed on first dielectric layer of the present invention as another kind of scheme.
The inventor finds, when the inorganic base that constitutes first dielectric layer contains CuO, can more effectively stop seeing through of silver, suppresses silver electrode color development aetiolation.The content of CuO preferably by weight 0.05%～1% in the inorganic base, and more preferably 0.05%～0.5%.Constitute first dielectric layer and alternatively the inorganic base of second dielectric layer contain 0.05%～1% CuO by weight.That is to say that the inorganic base that constitutes first dielectric layer contains 0.05%～1% CuO by weight; The inorganic base that constitutes second dielectric layer can contain 0.05%～1% CuO by weight, also can not contain CuO.In a kind of preferred embodiment, the inorganic base that constitutes first dielectric layer and second dielectric layer all contains 0.05%～1% CuO by weight.
The inorganic base of first dielectric layer and second dielectric layer can be glass, preferred seal glass, more preferably low-melting point sealing glass.From leaded angle, seal glass can be lead glass or crown glass.The angle of crystallization whether before and after the sealing-in, seal glass can be non-crystalline type seal glass and crystal type seal glass.
The example of lead glass has PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3Be glass.
Crown glass is meant lead content less than 0.2% glass (Unite States Standard), preferably less than 0.1% glass (European Union's standard).Consider influence, preferably adopt crown glass health and environment.
A kind of example of crown glass is a lead-free phosphate glass.The example of lead-free phosphate glass has Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na, K in system; R ' is Ba, Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5Be glass.
A kind of example of crown glass is unleaded non-crystalline type glass.Unleaded non-crystalline type glass can be (1) SiO
2-B
2O
3-RO-RO
2System, (2) B
2O
3-ZnO-V
2O
5System, (3) P
2O
5-ZnO-R
2O
3Be glass, the composition of these glass can be with reference to " latest developments that low-melting sealing glass is unleaded and the development trend thereof " of Shi Chengli, building glass and industrial glass, 2007, (2): 27-30.
A kind of example of crown glass is unleaded crystal type glass.Unleaded crystal type glass can be SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5Be glass.The example of crown glass also has Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2System lead-free glass.
The example of low-melting point sealing glass can also be the mentioned seal glass of following document: Bai Jinwei, " low-melting sealing glass is formed and development ", material Leader, 2002, the 16 the 12nd phases of volume, 43-46; Shi Chengli, " latest developments that low-melting sealing glass is unleaded and development trend thereof ", building glass and industrial glass, 2007, the 2 phases, 27-30; Guo Hongwei etc., " progress of low-melting sealing glass ", material Leader, 2005, the 19 volume special edition V, 283-285.
In a kind of preferred embodiment, B
2O
3-BaO-ZnO-SiO
2Be that glass preferred ingredients proportioning is: 15%～40% B
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.The inorganic base proportioning of preferred second dielectric layer also is the said components proportioning as first dielectric layer.The reason of the inorganic base of first dielectric layer and/or second dielectric layer being formed the as above scope of being limited to is as follows:
B
2O
3Reduce devitrification of glass and conductivity, improve thermo-chemical stability and dielectric constant, enlarge the vitrifying scope, improve glassy lustre, be less than 15%, the vitrifying difficulty; More than 40%, phase-splitting easily takes place.
ZnO reduces thermal coefficient of expansion, reduces softening point, increases heat, chemical stability and alkali resistance.Its content is 30～55%.If be less than 30%, do not reach and reduce the coefficient of expansion or softening point effect, if more than 55%, crystallization takes place easily, be difficult to obtain transparent sintered medium layer.
BaO reduces glass softening point, increases thermal coefficient of expansion, and suppresses the glass phase-splitting.Content is lower than 5%, can not reach significantly to flux and improve the transmitance effect, if be higher than 25%, the glass dust thermal coefficient of expansion is bigger than normal.
SiO
2Effectively improve the glass transition warm area, increase glass heat chemical stability and mechanical strength, reduce conductivity and dielectric loss.Content is higher than 20%, and glass softening point is higher, is lower than 3%, vitrifying difficulty, resistance to water variation.
The inventor finds that CuO can effectively suppress silver electrode color development aetiolation as glass additive, can control ligancy, stability and the animal migration of glass in addition.Content is lower than 0.05%, can not effectively suppress aetiolation, and content more than 1% excessively painted and stable deterioration of dielectric layer can take place, and is lower than 0.5% for good.
In the preferred embodiment of another kind, inorganic base contains 20%～60% SiO by weight
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO, 10～30% Co-Cr-Fe mixed oxide.
Glass substrate of the present invention has no particular limits, and gets final product soda-lime glass for example, the Cs25 glass of the PD200 glass of Japan AGC company exploitation, Corning Incorporated's exploitation so long as can be used for the glass substrate of PDP display.Glass substrate can also be that U.S. Pat 6313052B1, US 6297182B1, US 6087284, US 5459109, Japan Patent NEG spy drive the glass substrate disclosed in the flat 8-290938.
Another aspect of the present invention relates to a kind of method of making front panel of plasma display, comprises the steps:
A) on glass substrate, make first dielectric layer with first dielectric material;
B) on first dielectric layer, produce silver electrode;
C) on glass substrate, make second transparent dielectric layer to cover silver electrode.
Method of the present invention further comprises:
D) on second transparent dielectric layer, make diaphragm.Diaphragm is preferably the magnesium oxide diaphragm.
In a kind of preferred embodiment, the method for making first dielectric layer may further comprise the steps:
A1) on glass substrate, apply first layer of dielectric material;
A2) glass substrate that will have first layer of dielectric material carries out drying;
A3) dried first layer of dielectric material is carried out sintering.
In the preferred embodiment of another kind, the method for making first dielectric layer may further comprise the steps:
A1) on glass substrate, apply photosensitive first dielectric material;
A2) glass substrate that will have photosensitive first dielectric material carries out drying;
A3) with photosensitive first layer of dielectric material exposure;
A4) develop;
A5) first layer of dielectric material after will developing is carried out sintering.
Applying can be printing, coating or attaching.For example, can adopt methods such as silk screen print method, die cladding process, beam cladding process, cylinder cladding process, spraying process, laminate patch method to apply dielectric material.
First dielectric layer is arranged on the Wuxi face of soda-lime glass substrate.
Dry temperature range is 200～150 ℃.The temperature range of sintering is 500 ℃～550 ℃.
First dielectric material and second dielectric material are preferably slurry.Dielectric paste is made of inorganic base and carrier etc.Dielectric material can also further comprise the functional powder of giving dielectric layer electricity and optical property.
The inorganic base of first dielectric material and second dielectric material can be identical, also can be different.
Preferably contain CuO in the inorganic base.The content of CuO preferably by weight 0.05%～1% in the inorganic base, and more preferably 0.05%～0.5%.
Preferred inorganic base provides with powder type, and inorganic base is preferably glass dust.
In a kind of embodiment, first dielectric paste is made of glass dust, organic carrier.In another kind of embodiment, first dielectric paste comprises glass dust, colouring agent and organic carrier composition, in this case, can think that inorganic base is made of glass dust, colouring agent.
Glass dust can be ground and be made by the parent glass that physicochemical property reaches the requirement of PDP dielectric paste, is main component in transparent dielectric paste, is about 60%～80% by weight usually in slurry.The glass dust that is adopted in the transparent dielectric paste, its average grain diameter are no more than 4.0 μ m usually, preferably are no more than 2.0 μ m.And the maximum particle diameter of glass dust is no more than 10 μ m usually.
The glass that glass dust adopted, preferred seal glass, more preferably low-melting point sealing glass.From leaded angle, seal glass can be lead glass or crown glass.The angle of crystallization whether before and after the sealing-in, seal glass can be non-crystalline type seal glass and crystal type seal glass.The concrete kind and the composition of these glass as mentioned above, do not repeat them here.
Below with reference to Fig. 1 first embodiment of the present invention is described.
One aspect of the present invention relates to a kind of front panel of plasma display 100, comprising:
Black dielectric layer 102 is arranged on the glass substrate 101;
Wherein, the pattern part of corresponding at least silver electrode 103 is provided with black dielectric layer 102 between glass substrate 101 and the silver electrode 103.
Preferred front panel of plasma display of the present invention 100 further comprises: diaphragm 106 is arranged on the transparent dielectric layer 105.Diaphragm 106 is preferably the magnesium oxide diaphragm.
The pattern setting of black dielectric layer 102 corresponding silver electrodes 103.In a kind of preferred embodiment, the pattern setting of black dielectric layer 102 corresponding silver electrodes, other parts are not provided with the black dielectric layer.In the preferred embodiment of another kind, the pattern part of corresponding silver electrode 103 is provided with black dielectric layer 102a, and other does not hinder the part of demonstration to be provided with black dielectric layer 102b yet.For example, in further preferred embodiment, there be (as shown in Figure 1) in preferred black dielectric layer 102 with electrode black matrix 102a and secret note 102b figure.In this case, black dielectric layer 102 plays black matrix and secret note simultaneously, promptly serves as black matrix and secret note simultaneously, so just can form black matrix and secret note simultaneously in same operation, thereby simplifies technology, raises the efficiency, and reduces cost.
Thickness for black dielectric layer 102 does not have strict restriction, arrives substrate as long as can stop silver.But thickness should be not low excessively yet, crosses the low effect of blocking silver ion fully that then do not have.Usually, the thickness of this black dielectric layer 102 should not be lower than 1 μ m.In addition, the thickness of black dielectric layer 102 does not have not too high yet, for example, greater than 10 μ m, too high header board dielectric layer evenness and the flash-over characteristic of then influencing of thickness.The thickness of black dielectric layer 102 is 1～10 μ m, preferred 1～5 μ m, more preferably 2～3 μ m.
The inorganic base of black dielectric layer 102 and transparent dielectric layer 105 can be glass, preferred seal glass, more preferably low-melting point sealing glass.The concrete kind and the composition of these glass that can adopt as mentioned above, do not repeat them here.
Contain the CuO composition in the glass as inorganic base, weight percentage is 0.05%～1%.CuO can effectively suppress silver electrode color development aetiolation as glass additive, can control ligancy, stability and the animal migration of glass in addition.Content is lower than 0.05%, can not effectively suppress aetiolation, and content more than 1% excessively painted and stable deterioration of dielectric layer can take place, and is lower than 0.5% for good.
In a kind of preferred embodiment, the inorganic base of preparation black dielectric layer 102 contains 20%～60% SiO by weight
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO, 10～30% Co-Cr-Fe mixed oxide.
Another aspect of the present invention relates to the method for making front panel of plasma display 100, adopts following steps:
A) on glass substrate 101, make black dielectric layer 102;
B) on the glass substrate behind the sintering 101, make silver electrode 103, make the pattern part of corresponding at least silver electrode 103 between glass substrate 101 and the silver electrode 103 be provided with black dielectric layer 102;
C) on silver electrode 103, make transparent dielectric layer 105;
D) on transparent dielectric layer 105, make diaphragm 106.
The method of making black dielectric layer 102 may further comprise the steps:
A1) on glass substrate 101, apply the photosensitive black dielectric material;
A2) glass substrate 101 that will have the photosensitive black dielectric material carries out drying;
A3) the black layer of dielectric material is exposed;
A4) develop;
A5) the black dielectric material after will developing carries out sintering.
The method that the black dielectric material is applied to glass substrate 101 can be methods such as printing, coating, pad pasting.For example, can adopt methods such as silk screen print method, die cladding process, beam cladding process, cylinder cladding process, spraying process, laminate patch method to apply.
Dry temperature range is 100～200 ℃, and temperature retention time is 10～20min.
The temperature range of sintering is 550 ℃～600 ℃.Sintered heat insulating time 15～25min.
The black dielectric material is preferably slurry, comprises glass dust, colouring agent and organic carrier composition.Colouring agent also can directly be entrained in the glass dust, in this case, can think that inorganic base is made of glass and colouring agent.The component of black medium slurry, by weight, glass dust is shared to be 38～72%, and the shared weight ratio of colouring agent is 5～24%, and organic carrier is shared to be 20～45%.
In the black dielectric material as the preferred seal glass of the glass dust of inorganic base, more preferably low-melting point sealing glass.The concrete kind of used glass of glass dust and composition are as above.For example, glass dust can adopt PbO-B
2O
3-SiO
2System, Bi
2O
3-B
2O
3-BaO system or ZnO-B
2O
3-SiO
2Glass frit.Preferably contain the CuO composition in the glass dust, weight percentage is 0.05%～1%.CuO can effectively suppress silver electrode color development aetiolation as glass additive, can control ligancy, stability and the animal migration of glass in addition.Content is lower than 0.05%, can not effectively suppress aetiolation, and content more than 1% excessively painted and stable deterioration of dielectric layer can take place, and is lower than 0.5% for good.
Colouring agent can be selected Co oxide: Co for use
2O
3, Co
3O
4The perhaps oxide of Fe, Co, Mn or their mixed oxide: with Co-Cr-Fe, Co-Mn-Fe, Co-Mn-Fe-Al, Co-Ni-Cr-Fe, Co-Ni-Mn-Cr-Fe, Co-Ni-Al-Cr-Fe, Co-Mn-Al-Cr-Fe-Si are the metal oxide or the composite metal oxide of principal component.
In a kind of preferred embodiment, contain 20%～60% SiO by weight as the glass of inorganic base
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO mixed oxide.In a kind of preferred embodiment, contain 20%～60% SiO by weight as inorganic base
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO, 10～30% Co-Cr-Fe mixed oxide.
Carrier is by solvent and mixed with resin or constitute separately.
As solvent, mainly contain alcohols such as α (β, γ)-terpenes such as terpinol, ethylene glycol one alkyl (dialkyl group) ethers, diethylene glycol one alkyl (dialkyl group) ethers, ethylene glycol one alkyl (dialkyl group) ether diacetate esters class, diethylene glycol one alkyl (dialkyl group) ether diacetate esters class, propylene glycol one alkyl (dialkyl group) ethers, propylene glycol one alkyl (dialkyl group) ether diacetate esters class, dibutyl phthalate, methyl alcohol, ethanol, isopropyl alcohol, 1-butanols, these can distinguish use separately, also can mix two or more uses.
As resin, mainly containing fibers such as NC Nitroncellulose, ethyl cellulose, hydroxyethylcellulose is resin, acrylic resin such as butyl polyacrylate, poly-methyl acrylate, acrylic acid series condensate, polyvinyl alcohol, polyvinyl butyral resin etc., these can be used alone, but also also mix together respectively.
The manufacture method of silver electrode is being known in the art, and for example, can adopt following method to carry out.Utilize silk screen print method on glass substrate 101, to make one deck photosensitive silver electrode layer, the photosensitive silver electrode layer was carried out drying 10～15 minutes in 80～100 degree celsius temperature scopes, the exposure ultraviolet ray is vertically exposed to the photosensitive silver electrode layer by the exposure mother matrix of producing in advance that has required silver electrode figure, and exposure is at 400～500mj/cm
2In the scope, unwanted part photosensitive silver electrode layer is removed in development to the silver electrode after the exposure, thereby obtains required silver electrode figure, and developer solution is 0.3%～0.5% NaCO
3, the glass substrate that has the silver electrode figure 101 that development is finished is finished the making of silver electrode behind the sintering curing in 550～570 degrees centigrade of scopes.
In order to simplify description, outstanding inventive point of the present invention no longer is described in detail for other parts in the PDP substrate, element, circuit etc. and manufacture process thereof.
In a kind of preferred embodiment, the method for making front panel of plasma display comprises the steps:
1. at first on soda-lime glass substrate 101, make the photosensitive black layer of dielectric material that a layer thickness is 4 μ m～10 μ m with methods such as printing, coatings.
2. the soda-lime glass substrate 101 that will have the black layer of dielectric material is at 100～200 ℃ of temperature range inner dryings.
3. utilize the mask black layer of dielectric material exposure that is manufactured with electrode black matrix and black strip pattern.Exposure is 400～800mJ/cm
2
4. utilize 0.6% Na
2CO
3Developer solution, 1.5kgf/cm
2Development pressure, the material of the developing powder of 4000～5000mm/min after to exposure develops.
5. the glass substrate 101 after will developing carries out sintering under 550～600 ℃, sintered heat insulating time 15～25min.
6. on the soda-lime glass substrate 101 behind the sintering, make silver electrode 103.
7. above silver electrode 103, utilize methods such as printing or coating to make the transparent dielectric layer 105 that a layer thickness is 20～35 μ m.
8. the glass substrate 101 that will finish the transparent medium making is at 100～150 ℃ of scope inner dryings.
9. with the dried glass substrate 101 of transparent medium sintering in 550～580 ℃ of scopes.
10. on the transparent dielectric layer behind the sintering 105, make magnesium oxide diaphragm 106 with methods such as evaporation or sputters.
Embodiment
Embodiment 1
1. at first on the soda-lime glass substrate, make the photosensitive black layer of dielectric material that a layer thickness is 10 μ m with print process.
2. the soda-lime glass substrate that will have a black layer of dielectric material was 150 ℃ of dryings 15 minutes.
3. utilize the mask that is manufactured with electrode black matrix and black strip pattern to make the exposure of black layer of dielectric material.Exposure is 600mJ/cm
2
4. utilize 0.6% Na
2CO
3Developer solution, the development pressure of 1.5kgf/cm2, the developing powder of 5000mm/min develops to the material after exposing.
5. the glass substrate after will developing carries out sintering under 580 ℃, sintered heat insulating time 25min.
6. on the soda-lime glass substrate behind the sintering, make silver electrode.
7. above silver electrode, utilize print process to make the transparent dielectric layer that a layer thickness is 35 μ m.
8. will finish glass substrate that transparent medium makes 150 ℃ of dryings 15 minutes.
With the dried glass substrate of transparent medium at 570 ℃ of sintering, temperature retention time 30 minutes.
10. on the transparent dielectric layer behind the sintering, make the magnesium oxide diaphragm with vapour deposition method.
Embodiment 2 to 7 steps are identical with embodiment 1, only carry out according to the actual conditions shown in the table 1.
Table 1 embodiments of the invention
Comparative example
Comparative example 1: do not have the front panel of black dielectric layer between soda-lime glass substrate and silver electrode, comparative example 1 adopts directly makes silver electrode on the soda-lime glass substrate.
Comparative example 2: be provided with transparent dielectric layer between soda-lime glass substrate and silver electrode, do not contain CuO, other composition is identical with embodiment 1.
Comparative example 3: the soda-lime glass substrate manufacture has the front panel of NP7972 black medium, and silver electrode is produced on the black medium.
Performance relatively
Utilize the transmitance of measurement of ultraviolet-visible spectrophotometer front panel between visible region, make comparisons with wavelength 550nm green-yellow light transmitance numerical value.Usually requiring transmitance is being good more than 80%.
The secret note transmitance is preferably below 2% or 2%, and in addition, to be the L value of lightness by the glass substrate of front glass substrate side mensuration and the boundary reflection rate of black layer, this value is preferably below 20 or 20, more preferably below 10 or 10.
Use the color color difference meter to measure the b value of expression dielectric layer degree of staining.Deducting the numerical value that obtains after the b of Ag electrode and glass substrate from total b value is the dielectric layer yellowness.If the b value is lower than 1.5, do not observe the yellowing phenomenon substantially, so the b value is lower than 1.5 for good.
Number of bubbles is observed the number of bubbles of finding greater than 20 μ m with the magnifying glass of 30 times of enlargement ratios in 5cm * 5cm scope.
The performance of table 2 embodiment of the invention and comparative example relatively
By the data shown in the table 2 as can be seen, glass substrate of the present invention is being better than comparative example aspect yellowness, transmitance, the number of bubbles.
Below with reference to Fig. 2 second embodiment of the present invention is described.
Fig. 2 is the perspective view of the front panel of plasma display of second embodiment of the invention.
One aspect of the present invention relates to a kind of front panel of plasma display 200, comprising:
-glass substrate 201;
-the first transparent dielectric layer 202 is arranged on the glass substrate 201;
-silver electrode 203 is arranged on first transparent dielectric layer 202;
-the second transparent dielectric layer 205 is arranged on the glass substrate 201 and covers silver electrode 203.
Preferred front panel of plasma display of the present invention further comprises: diaphragm 206 is arranged on second transparent dielectric layer 205.Diaphragm 206 is preferably the magnesium oxide diaphragm.
The pattern part of corresponding at least silver electrode is provided with first transparent dielectric layer 202 between glass substrate 201 and the silver electrode 203.In a kind of preferred embodiment, between glass substrate 201 and the silver electrode 203 only the pattern part of corresponding silver electrode be provided with first transparent dielectric layer 202.In another kind of embodiment, be arranged on the whole glass substrate 201 at first transparent dielectric layer 202 between glass substrate 201 and the silver electrode 203.
The thickness of first transparent dielectric layer 202 has no particular limits, and arrives glass substrate 201 as long as can block silver ion.For example, the thickness of first transparent dielectric layer 202 can be 1 μ m～6 μ m.
The inorganic base of second transparent dielectric layer 205 and first transparent dielectric layer 202 can be identical, also can be different.Consider cost and simplify technology, the inorganic base of preferred second transparent dielectric layer 205 is identical with first transparent dielectric layer 202.
First transparent dielectric layer 202 is arranged on the Wuxi face of soda-lime glass substrate 201.
The inventor finds, when the inorganic base that constitutes first transparent dielectric layer 202 contains CuO, can more effectively stop seeing through of silver, suppresses silver electrode color development aetiolation.The content of CuO preferably by weight 0.05%～1% in the inorganic base, and more preferably 0.05%～0.5%.Constitute first transparent dielectric layer 202 and alternatively the inorganic base of second transparent dielectric layer 205 contain 0.05%～1% CuO by weight.That is to say that the inorganic base that constitutes first transparent dielectric layer 202 contains 0.05%～1% CuO by weight, the inorganic base that constitutes second transparent dielectric layer 205 can contain 0.05%～1% CuO by weight, also can not contain CuO.In a kind of preferred embodiment, the inorganic base that constitutes first transparent dielectric layer 202 and second transparent dielectric layer 205 all contains 0.05%～1% CuO by weight.
The inorganic base of first transparent dielectric layer 202 and second transparent dielectric layer 205 can be glass, preferred seal glass, more preferably low-melting point sealing glass.From leaded angle, seal glass can be lead glass or crown glass.The angle of crystallization whether before and after the sealing-in, seal glass can be non-crystalline type seal glass and crystal type seal glass.
The example of lead glass has PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3Be glass.
Crown glass is meant lead content less than 0.2% glass (Unite States Standard), preferably less than 0.1% glass (European Union's standard).Consider influence, preferably adopt crown glass health and environment.
A kind of example of crown glass is a lead-free phosphate glass.The example of lead-free phosphate glass has Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na, K in system; R ' is Ba, Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5Be glass.
A kind of example of crown glass is unleaded non-crystalline type glass.Unleaded non-crystalline type glass can be (1) SiO
2-B
2O
3-RO-RO
2System, (2) B
2O
3-ZnO-V
2O
5System, (3) P
2O
5-ZnO-R
2O
3Be glass, the composition of these glass can be with reference to " latest developments that low-melting sealing glass is unleaded and the development trend thereof " of Shi Chengli, building glass and industrial glass, 2007, (2): 27-30.
A kind of example of crown glass is unleaded crystal type glass.Unleaded crystal type glass can be SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5Be glass.The example of crown glass also has Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2System lead-free glass.
The example of low-melting point sealing glass can also be the mentioned seal glass of following document: Bai Jinwei, " low-melting sealing glass is formed and development ", material Leader, 2002, the 16 the 12nd phases of volume, 43-46; Shi Chengli, " latest developments that low-melting sealing glass is unleaded and development trend thereof ", building glass and industrial glass, 2007, the 2 phases, 27-30; Guo Hongwei etc., " progress of low-melting sealing glass ", material Leader, 2005, the 19 volume special edition V, 283-285.
In a kind of preferred embodiment, B
2O
3-BaO-ZnO-SiO
2Be that glass preferred ingredients proportioning is: 15%～40% B
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.The inorganic base proportioning of preferred second transparent dielectric layer 205 also is the said components proportioning as first transparent dielectric layer 202.The reason that the inorganic base of first transparent dielectric layer 202 and/or second transparent dielectric layer 205 is formed the as above scope of being limited to does not repeat them here as mentioned above.
The inventor finds that unexpectedly CuO can effectively suppress silver electrode color development aetiolation as glass additive, can control ligancy, stability and the animal migration of glass in addition.Content is lower than 0.05%, can not effectively suppress aetiolation, and content more than 1% excessively painted and stable deterioration of dielectric layer can take place, and is lower than 0.5% for good.
Glass substrate of the present invention has no particular limits, and gets final product soda-lime glass for example, the Cs25 glass of the PD200 glass of Japan AGC company exploitation, Corning Incorporated's exploitation so long as can be used for the glass substrate of PDP display.Glass substrate can also be that U.S. Pat 6313052B1, US 6297182B1, US 6087284, US 5459109, Japan Patent NEG spy drive the glass substrate disclosed in the flat 8-290938.
Another aspect of the present invention relates to a kind of method of making front panel of plasma display, comprises the steps:
A) on glass substrate 201, make first transparent dielectric layer 202 with transparent dielectric material;
B) on first transparent dielectric layer 202, produce silver electrode 203;
C) on glass substrate 201, make second transparent dielectric layer 205 to cover silver electrode 203.
Method of the present invention further comprises:
D) on second transparent dielectric layer 205, make diaphragm 206.Diaphragm 206 is preferably the magnesium oxide diaphragm.
The method of making first transparent dielectric layer 202 and second transparent dielectric layer, 205 transparent dielectric layers may further comprise the steps:
A1) on glass substrate, apply transparent dielectric material;
A2) glass substrate that will have the transparent dielectric material layer carries out drying;
A3) dried transparent dielectric material layer is carried out sintering.
Applying can be printing, coating or attaching.For example, can adopt methods such as silk screen print method, die cladding process, beam cladding process, cylinder cladding process, spraying process, laminate patch method to apply transparent dielectric material.
First transparent dielectric layer 202 is arranged on the Wuxi face of soda-lime glass substrate 201.
Dry temperature range is 150～200 ℃.The temperature range of sintering is 500 ℃～550 ℃.
Transparent dielectric material is preferably slurry.Transparent dielectric paste is made of inorganic base and carrier etc.Transparent dielectric material can also further comprise the functional powder of giving dielectric layer electricity and optical property.
The inorganic base of first transparent dielectric layer 202 and second transparent dielectric layer 205 can be identical, also can be different.
Preferably contain CuO in the inorganic base.The content of CuO preferably by weight 0.05%～1% in the inorganic base, and more preferably 0.05%～0.5%.
Preferred inorganic base provides with powder type, and inorganic base is preferably glass dust.Transparent dielectric paste is made of glass dust, organic carrier in a kind of preferred embodiment.Glass dust can be ground and be made by the parent glass that physicochemical property reaches the requirement of PDP dielectric paste, is main component in transparent dielectric paste, is about 60%～80% by weight usually in slurry.The glass dust that is adopted in the transparent dielectric paste, its average grain diameter are no more than 4.0 μ m usually, preferably are no more than 2.0 μ m.And the maximum particle diameter of glass dust is no more than 10 μ m usually.
The glass that glass dust adopted, preferred seal glass, more preferably low-melting point sealing glass.From leaded angle, seal glass can be lead glass or crown glass.The angle of crystallization whether before and after the sealing-in, seal glass can be non-crystalline type seal glass and crystal type seal glass.The concrete kind and the composition of these glass that can adopt as mentioned above, do not repeat them here.
In a kind of preferred embodiment, B
2O
3-BaO-ZnO-SiO
2Be that glass preferred ingredients proportioning is: 15%～40% B
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.The inorganic base proportioning of preferred second transparent dielectric layer 205 also is the said components proportioning as first transparent dielectric layer 202.
Carrier is made up of solvent and resin, and vector contg accounts for 20%～45% of transparent dielectric material total weight by weight.Solvent and examples of resins are as cited those of first embodiment.
The manufacture method of silver electrode 203 is being known in the art, and for example, can adopt following method to carry out.Utilize silk screen print method on glass substrate 201, to make one deck photosensitive silver electrode layer, the photosensitive silver electrode layer was carried out drying 10～15 minutes in 80～200 degree celsius temperature scopes, the exposure ultraviolet ray is vertically exposed to the photosensitive silver electrode layer by the exposure mother matrix of producing in advance that has required silver electrode pattern, and exposure is at 400～500mj/cm
2In the scope, unwanted part photosensitive silver electrode layer is removed in development to the silver electrode after the exposure, thereby obtains required silver electrode pattern, and developer solution is 0.3%～0.5% NaCO
3, the glass substrate 201 that has silver electrode 203 figures that development is finished is finished the making of silver electrode 203 behind the sintering curing in 550～570 degrees centigrade of scopes.
In order to simplify description, outstanding inventive point of the present invention no longer is described in detail for other parts in the PDP substrate, element, circuit etc. and manufacture process thereof.
In a kind of preferred embodiment, the method for making front panel of plasma display comprises the steps:
1. at first on soda-lime glass substrate 201, apply the transparent dielectric paste that a layer thickness is 4 μ m～10 μ m with methods such as printing, coatings;
2. the soda-lime glass substrate 201 that will have above-mentioned slurry carries out drying in 150～200 ℃ of temperature ranges;
3. with dried soda-lime glass substrate 201 sintering in 500 ℃～550 ℃ temperature ranges, make first transparent dielectric layer 202;
4. on first transparent dielectric layer 202 of the soda-lime glass substrate 201 behind the sintering, make silver electrode 203.
5. on the silver electrode 203 and first transparent dielectric layer 202, apply the above-mentioned slurry that a layer thickness is 25 μ m～35 μ m with methods such as printing, coatings;
6. the soda-lime glass substrate 201 that will have above-mentioned slurry carries out drying in 150～200 ℃ of temperature ranges;
7. with dried soda-lime glass substrate 201 sintering in 500 ℃～550 ℃ temperature ranges, to make second transparent dielectric layer 205;
8. finish evaporation or sputter magnesium oxide diaphragm 206 on second transparent medium of sintering for the second time;
The present invention makes a layer thickness on soda-lime glass substrate 201 be 4 to 10 microns transparent dielectric paste, thickness 1 to the 6 μ m of first transparent dielectric layer 202 behind the sintering.This dielectric layer not only can prevent the aetiolation that the silver diffusion brings, and can reduce the bubble that produces with electrode reaction.
Example
Example 1
1. at first on soda-lime glass substrate 201, apply the transparent dielectric paste that a layer thickness is 10 μ m with painting method; Glass dust set of dispense ratio as inorganic base in the slurry is B
2O
3Content 30%, ZnO content 31%, SiO
2Content 18%, BaO content 20.2%, CuO content 0.8%, solvent terpinol content 32%, resin ethyl cellulose cellulose content 1.3% in the slurry;
2. the soda-lime glass substrate 201 that will have above-mentioned slurry carries out drying at 150 ℃;
With dried soda-lime glass substrate 201 at 550 ℃ of sintering, make first transparent dielectric layer 202;
4. on first transparent dielectric layer 202 behind the sintering, make silver electrode 203;
5. on the silver electrode 203 and first transparent dielectric layer 202, apply the above-mentioned slurry that a layer thickness is 35 μ m with methods such as printing, coatings; In the slurry as the B of the glass dust set of dispense ratio of inorganic base
2O
3Content 30%, ZnO content 31%, SiO
2Content 18%, BaO content 20.2%, CuO content 0.8%, solvent terpinol content 32%, resin ethyl cellulose cellulose content 1.3% in the slurry;
6. the soda-lime glass substrate 201 that will have above-mentioned slurry carries out drying at 150 ℃;
With dried soda-lime glass substrate 201 at 550 ℃ of sintering, to make second transparent dielectric layer 205;
8. finish evaporation magnesium oxide diaphragm 206 on second transparent dielectric layer 205 of sintering for the second time.
Example 2 to 7
The step of example 2 to 7 is identical with example 1, only carries out according to the actual conditions shown in the table 3.
Table 3 example of the present invention
Comparative Examples
Comparative Examples 1: do not have the front panel of transparent dielectric layer between soda-lime glass substrate and silver electrode, promptly Comparative Examples 1 adopts and directly makes silver electrode on the soda-lime glass substrate.
Comparative Examples 2: be provided with transparent dielectric layer between soda-lime glass substrate and silver electrode, transparent dielectric layer does not contain CuO, and other composition is identical with example 1.
Comparative Examples 3: use soda-lime glass substrate and AP5655 transparent medium.
Performance relatively
Utilize the transmitance of measurement of ultraviolet-visible spectrophotometer transparent dielectric layer between visible region, make comparisons with wavelength 550nm green-yellow light transmitance numerical value.Usually requiring transmitance is being good more than 80%.
Use the color color difference meter to measure the b value of expression dielectric layer degree of staining.Deducting the numerical value that obtains after the b of Ag electrode and glass substrate from total b value is the dielectric layer yellowness.If the b value is lower than 1.5, do not observe the yellowing phenomenon substantially, so the b value is lower than 1.5 for good.
Number of bubbles is observed the number of bubbles of finding greater than 20 μ m with the magnifying glass of 30 times of enlargement ratios in 5cm * 5cm scope.
The performance of table 4 example of the present invention and Comparative Examples relatively.
By the data shown in the table 4 as can be seen, glass substrate of the present invention is being better than Comparative Examples aspect yellowness, transmitance, the number of bubbles three.
Claims (21)
1. a front panel of plasma display is characterized in that, comprising:
-glass substrate;
-the first dielectric layer is arranged on the described glass substrate;
-silver electrode is arranged on described first dielectric layer;
-second transparent dielectric layer is arranged on the described glass substrate and covers described silver electrode;
Wherein, the pattern part of corresponding at least described silver electrode is provided with described first dielectric layer between described glass substrate and the described silver electrode.
2. front panel of plasma display according to claim 1, it is characterized in that, the inorganic base that constitutes described first dielectric layer contains 0.05%～1% CuO by weight, and the inorganic base that constitutes described second dielectric layer alternatively contains 0.05%～1% CuO by weight.
3. front panel of plasma display according to claim 2 is characterized in that, described inorganic base is a glass, preferred seal glass, more preferably low-melting point sealing glass, most preferably crown glass.
4. front panel of plasma display according to claim 2 is characterized in that, described inorganic base is selected from following at least a glass: PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3System, Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na or K in system; R ' is Ba or Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5, B
2O
3-ZnO-V
2O
5System, SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5System, Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2Be glass.
5. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that described inorganic base contains 20%～60% SiO by weight
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO.
6. front panel of plasma display according to claim 5 is characterized in that, the described inorganic base that constitutes described first dielectric layer also contains 10%～30% Co-Cr-Fe mixed oxide.
7. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that described first dielectric layer is the black dielectric layer, and as the electrode black matrix, alternatively also as secret note.
8. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that described inorganic base contains 15%～40% B by weight
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.
9. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that described first dielectric layer is a transparent dielectric layer.
10. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that described first thickness of dielectric layers is 1～5 μ m.
11., it is characterized in that described glass substrate is the soda-lime glass substrate according to each described front panel of plasma display of claim 1 to 4.
12. according to each described front panel of plasma display of claim 1 to 4, it is characterized in that, further comprise:
Diaphragm is arranged on described second dielectric layer.
13. the preparation method of a front panel of plasma display is characterized in that, described method adopts following steps:
A) on glass substrate, make first dielectric layer with first dielectric material;
B) on described first dielectric layer, produce silver electrode;
C) on glass substrate, make second transparent dielectric layer to cover described silver electrode with second dielectric material;
Wherein, the pattern part of corresponding at least described silver electrode is provided with described first dielectric layer between described glass substrate and the described silver electrode.
14. method according to claim 13, it is characterized in that, inorganic base in described first dielectric material contains 0.05%～1% CuO by weight, and the inorganic base in described alternatively second dielectric material contains 0.05%～1% CuO by weight.
15. method according to claim 14 is characterized in that, described inorganic base is a glass, preferred seal glass, more preferably low-melting point sealing glass, most preferably crown glass.
16. method according to claim 14 is characterized in that, described inorganic base is selected from following at least a glass: PbO-B
2O
3-SiO
2System, PbO-ZnO-B
2O
3System, PbO-B
2O
3-SiO
2-ZnO system, P
2O
5-PbO-V
2O
5-Sb
2O
3System, Na
2O-CaO-P
2O
5System, Na
2O-BaO-P
2O
5System, Na
2O-Al
2O
3-P
2O
5System, Li
2O-BaO-P
2O
5System, SnO-P
2O
5System, ZnO-P
2O
5System, RO-R ' O-P
2O
5(R is Li, Na or K in system; R ' is Ba or Ca), SnO-B
2O
3-P
2O
5System, SnO-ZnO-P
2O
5, B
2O
3-ZnO-V
2O
5System, SiO
2-AlO-RO system, ZnO-B
2O
3-SiO
2System, SiO
2-B
2O
3-Al
2O
3-Li
2O system, B
2O
3-ZnO-V
2O
5System, SiO
2-B
2O
3-Al
2O
3-Li
2O-P
2O
5System, B
2O
3-ZnO-BaO-SrO-V
2O
5System, Bi
2O
3-B
2O
3-BaO system, B
2O
3-BaO-ZnO, Bi
2O
3-B
2O
3-BaO-ZnO system, B
2O
3-BaO-ZnO-SiO
2Be glass.
17., it is characterized in that described inorganic base contains 15%～40% B by weight according to each described method of claim 13 to 16
2O
3, 30%～55% ZnO, 3%～20% SiO
2, 5%～25% BaO, 0.05%～1% CuO.
18., it is characterized in that described inorganic base contains 20%～60% SiO by weight according to each described method of claim 13 to 16
2, 5%～30% B
2O
3, 3%～25% ZnO, 5%～20% K
2O, 0.5～10% CaO, 0.05%～1% CuO.
19. method according to claim 18 is characterized in that, the inorganic base in described first dielectric material also contains 10%～30% Co-Cr-Fe mixed oxide.
20., it is characterized in that the method for making first dielectric layer may further comprise the steps according to each described method of claim 13 to 16:
A1) on described glass substrate, apply described first layer of dielectric material;
A2) the described glass substrate that will have described first layer of dielectric material carries out drying;
A3) dried described first layer of dielectric material is carried out sintering.
21., it is characterized in that the method for making first dielectric layer may further comprise the steps according to each described method of claim 13 to 16:
A1) on described glass substrate, apply photosensitive first dielectric material;
A2) the described glass substrate that will have described photosensitive first dielectric material carries out drying;
A3) with described photosensitive first layer of dielectric material exposure;
A4) develop;
A5) first layer of dielectric material after will developing is carried out sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101132036A CN101593654A (en) | 2008-05-27 | 2008-05-27 | A kind of front panel of plasma display and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101132036A CN101593654A (en) | 2008-05-27 | 2008-05-27 | A kind of front panel of plasma display and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101593654A true CN101593654A (en) | 2009-12-02 |
Family
ID=41408246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101132036A Pending CN101593654A (en) | 2008-05-27 | 2008-05-27 | A kind of front panel of plasma display and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101593654A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105174716A (en) * | 2014-06-03 | 2015-12-23 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Dielectric glass composition |
| CN104402207B (en) * | 2014-10-27 | 2016-09-07 | 京东方科技集团股份有限公司 | Light pyroceram, its preparation method and relevant apparatus |
-
2008
- 2008-05-27 CN CNA2008101132036A patent/CN101593654A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105174716A (en) * | 2014-06-03 | 2015-12-23 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Dielectric glass composition |
| US10074456B2 (en) | 2014-06-03 | 2018-09-11 | Heraeus Precious Metals North America Conshohocken Llc | Dielectric glass composition |
| CN104402207B (en) * | 2014-10-27 | 2016-09-07 | 京东方科技集团股份有限公司 | Light pyroceram, its preparation method and relevant apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100535173B1 (en) | Electrode material, dielectric material and plasma display panel using them | |
| EP1878710A1 (en) | Glass composition for electrode coating and glass paste containing same | |
| EP1884500A1 (en) | Plasma display panel and method for manufacturing same | |
| KR100941907B1 (en) | Lead-free glass, glass powder of electrode coating, and plasma display | |
| JP2006193385A (en) | Glass for coating electrode and front and back substrates of plasma display panel | |
| KR20060105443A (en) | Glass composition and glass paste composition | |
| WO2011085685A1 (en) | Acid resistant and lead-free glass powder used for dielectric and electronic slurry comprising same | |
| US6010973A (en) | Dielectric forming material for use in plasma display panel and glass powder used therefor | |
| CN101258111B (en) | Glass composition and display panel using same | |
| JP2003226549A (en) | Electrode material, dielectric material, electrode paste, dielectric paste and plasma display panel using them | |
| CN101593654A (en) | A kind of front panel of plasma display and manufacture method thereof | |
| CN101593653A (en) | A kind of front panel of plasma display and manufacture method thereof | |
| KR20060041920A (en) | Plasma display panel | |
| CN102082056A (en) | Dielectric glass powder for plasma display panel | |
| KR20090024790A (en) | Plasma display panel and method for manufacturing the same | |
| KR20080044771A (en) | Dielectric powder for display device | |
| JP4380589B2 (en) | Low melting point glass for electrode coating and plasma display device | |
| JP4282885B2 (en) | Low melting point glass for electrode coating and plasma display device | |
| KR20080024086A (en) | Glass powder for covering electrode of display device | |
| US20080085423A1 (en) | Plasma display panel, a method for manufacturing a plasma display panel, and related technologies | |
| CN101681762B (en) | Plasma display panel | |
| CN102265372A (en) | Plasma display panel | |
| KR20020021072A (en) | Pdp material controlled in moisture content | |
| CN101811830A (en) | Lead-free glass powder for dielectric layer | |
| CN101123158A (en) | Plasma display panel and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20091202 |