CN101588012A - Q adjusting method for steady cavity/unsteady cavity of laser diode end-face pump solid laser - Google Patents
Q adjusting method for steady cavity/unsteady cavity of laser diode end-face pump solid laser Download PDFInfo
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- CN101588012A CN101588012A CNA2009103039939A CN200910303993A CN101588012A CN 101588012 A CN101588012 A CN 101588012A CN A2009103039939 A CNA2009103039939 A CN A2009103039939A CN 200910303993 A CN200910303993 A CN 200910303993A CN 101588012 A CN101588012 A CN 101588012A
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Abstract
The present invention relates to a laser diode end-face pump solid laser, especially a Q adjusting method for a steady cavity/unsteady cavity of the laser diode end-face pump solid laser, including at least a pump source laser diode for forming a laser, a coupling system and a laser resonant cavity, the laser resonant cavity includes a laser crystal and an output mirror and is characterized in that a light output face of the output mirror is fixed with a piezoelectric ceramic device, the telescoping variation of the piezoelectric ceramic device is controlled by electrical signals to drive the output mirror to move right and left along an optical axis, when the length of the resonant cavity is smaller than the focal distance of a crystal thermal lens due to the telescoping variation, the laser resonant cavity emits laser, when the length of the resonant cavity is more than the focal distance of the crystal thermal lens due to the telescoping variation, the resonant cavity is in an unsteady state and the attrition of the resonant cavity is larger without laser output. The invention may simplify the structure of a Q adjusting laser, avoid the attrition and other badness effects due to the insertion of optical elements, and implement a high light-light translation efficiency.
Description
Technical field
The present invention relates to laser diode end-face pump solid laser, particularly steady chamber-unsteady cavity Q-regulating method in the laser diode end-face pump solid laser.
Background technology
Laser diode end-face pump solid laser, usually form by pumping source laser diode, coupled system resonant cavity, resonant cavity comprises laser crystal and chamber mirror, laser crystal can be converted into laser energy with pump energy, crystal pumping end surface plated film is as a chamber mirror, and the outgoing mirror surface coating is as another chamber mirror.For laser diode end-face pump solid laser, owing to there is effect such as quantum differential loss, caused the gross energy of its injection to have only part to be converted into laser output, major part all is converted into burn-off in its complementary energy.Owing to be subjected to the acting in conjunction of cooling system on every side of pumping light uneven distribution and crystal, make that the interior temperature distributing disproportionation of crystal is even, the formation temperature gradient, the thermal effect of initiation crystal, wherein, the crystal thermal lensing effect has comparative advantage.Usually, need to adopt comparatively complicated means that thermal effect is suppressed, for example, in the middle of resonant cavity, insert optical element with the compensation thermal effect, but it has increased the complexity of system, makes the debug process of laser more loaded down with trivial details.
Q-regulating technique is exactly to adopt certain device to control the Q value of laser resonant cavity, and it is changed according to certain rules, thereby realizes the purpose of laser with impulse form output.The saturable absorption of acoustooptic diffraction, electric light diffraction, some special media or the like the mode of normally utilizing Q switching realizes the control to resonant cavity internal loss size.When cavity loss was big, oscillation light can not starting of oscillation, and laser does not have laser output, and pump light impels that energy level population constantly accumulates on the laser medium, realizes the storage of energy; When cavity loss reduced, because threshold value descends, induced transition was concentrated in oscillation light starting of oscillation rapidly in the last energy level particle short time in the laser crystal, and energy stored discharges rapidly, forms laser pulse output.
Owing in the middle of resonant cavity, added Q switched element, Q-switched laser structurally is more complex than the laser diode end-face pump solid laser of non-accent Q usually, and its existence can produce thermal effect and insert loss, influenced the output laser beam quality, reduced the conversion efficiency of pump light to output laser.
Summary of the invention
The objective of the invention is to propose steady chamber-unsteady cavity Q-regulating method in a kind of simple in structure, compact, laser diode end-face pump solid laser that light-light conversion efficiency is high.
The object of the present invention is achieved like this, steady chamber-unsteady cavity Q-regulating method in the laser diode end-face pump solid laser, which comprises at least the pumping source laser diode that constitutes laser, coupled system, laser resonant cavity, laser resonant cavity comprises laser crystal, outgoing mirror, laser diode injects laser crystal by optical coupling system with pump light, laser crystal is carried out continuous pumping, it is characterized in that: the light gasing surface at outgoing mirror is fixed with piezoelectric ceramic devices, telescopic variation by signal of telecommunication control piezoelectric ceramic devices, drive outgoing mirror along the optical axis move left and right, when telescopic variation makes resonant cavity chamber length less than the crystal thermal focal length, laser resonant cavity has laser output, when telescopic variation makes the resonant cavity chamber grow up in the crystal thermal focal length, resonant cavity is in unstable state, this moment, the loss of resonator was bigger, did not have laser output.
Described piezoelectric ceramic devices are the discoid of center drilling.
The telescopic variation of described signal of telecommunication control piezoelectric ceramic devices is when adding positive voltage, and piezoelectric ceramic devices thickness is greater than initial condition, when voltage is zero, and piezoelectric ceramic devices caliper recovery initial condition.
The telescopic variation of described signal of telecommunication control piezoelectric ceramic devices is when adding positive voltage, and piezoelectric ceramic devices thickness is greater than initial condition, and when voltage was negative voltage, piezoelectric ceramic devices thickness was less than initial condition.
The telescopic variation of described signal of telecommunication control piezoelectric ceramic devices is when adding negative voltage, and piezoelectric ceramic devices thickness is less than initial condition, when voltage is zero, and piezoelectric ceramic devices caliper recovery initial condition.
Characteristics of the present invention are: transfer the Q mode different with traditional laser diode end-face pump solid laser, the present invention is according to the long relation of laser crystal thermal focal length and chamber, utilize piezoelectric ceramic devices that the signal of telecommunication is converted into this feature of mechanical movement, by regulating the length of resonant cavity under certain draw power, make its alternation in steady chamber-unsteady cavity state, thereby obtain to transfer the effect of Q.The present invention can simplify the structure of Q-switched laser, avoids inserting loss and other ill effect that optical element brings, and realizes higher light-phototranstormation efficiency.
Description of drawings
The invention will be further described below in conjunction with the embodiment accompanying drawing.
Fig. 1 is that the structure chart and the piezoelectric ceramic devices of the embodiment of the invention 1 apply electric signal waveform figure.
Fig. 2 is that the structure chart and the piezoelectric ceramic devices of the embodiment of the invention 2 apply electric signal waveform figure.
Fig. 3 is that the structure chart and the piezoelectric ceramic devices of the embodiment of the invention 3 apply electric signal waveform figure.
Among the figure: 1, laser diode; 2, coupled system; 3, crystal thermal lens; 4, laser crystal; 5, outgoing mirror; 6, piezoelectric ceramic devices.
Embodiment
Embodiment 1: as shown in Figure 1, laser diode end-face pump solid laser comprises pumping source laser diode 1, coupled system 2, laser resonant cavity, and laser resonant cavity comprises laser crystal 4, outgoing mirror 5.Outgoing mirror 5 rear end faces are connected with piezoelectric ceramic devices 6 flexible faces, and by the flexible wriggling of signal of telecommunication control piezoelectric ceramic devices 6, the minute surface of outgoing mirror 5 is vertical with light path.Laser diode 1 output beam injects the laser crystal 4 of resonant cavity by coupled system 2, because pump energy is very high, make the laser crystal 4 inner thermal effects that produce, thereby make and form crystal thermal lens 3 in the resonant cavity, the focal length of crystal thermal lens 3 is long greater than resonant cavity at this moment, laser has laser output, continue to increase pump power, the focal length of crystal thermal lens 3 further shortens, and when focal length was long less than the chamber, resonant cavity was in unstable state, this moment, the loss of resonator was bigger, do not have laser output, pump light makes energy level population accumulation on the laser crystal 4, storage power.Select suitable piezoelectric ceramic devices 6, regulate 6 making alives of piezoelectric ceramic devices, voltage waveform as shown in Figure 1, when adding positive voltage, piezoelectric ceramic devices 6 thickness are greater than initial condition, drive outgoing mirror 5 motions and be parallel on the path of optical axis, make long shortening the in chamber of resonant cavity, when chamber length during less than crystal thermal lens 3 focal lengths, threshold value reduces, the last energy level particle of accumulation is concentrated induced transition at short notice in the laser crystal 4, and energy stored discharges rapidly, forms laser pulse output; When voltage is zero, piezoelectric ceramic devices 6 caliper recovery initial conditions, grow up in the focal length of crystal thermal lens 3 in the chamber, and resonant cavity is in unstable state once more, does not have laser output, and promptly resonant cavity alternately is in steady chamber-unsteady cavity state, thereby obtains to transfer the effect of Q.
Embodiment 2: as shown in Figure 2, system configuration is identical with embodiment 1, and difference is, piezoelectric ceramic devices 6 add the signal of telecommunication as shown in Figure 2, when applying negative voltage, piezoelectric ceramic devices 6 thickness are less than initial condition, at this moment, increase pump power, crystal thermal lens 3 focal lengths shorten, when focal length is long less than the chamber, resonant cavity is in unstable state, and this moment, the loss of resonator was bigger, does not have laser output, pump light makes energy level population accumulation on the laser crystal 4, storage power; When adding positive voltage, piezoelectric ceramic devices 6 thickness are greater than initial condition, driving outgoing mirror 5 motions is being parallel on the path of optical axis, make long shortening the in chamber of resonant cavity, when chamber length during less than crystal thermal lens 3 focal lengths, threshold value reduces, the concentrated at short notice induced transition of the last energy level particle of accumulation in the laser crystal 4, energy stored discharges rapidly, forms laser pulse output; The voltage that is applied when piezoelectric ceramic devices 6 is positive and negative alternately the time, and resonant cavity also alternately is in steady chamber and unsteady cavity state, obtains to transfer the effect of Q.
Embodiment 3: as shown in Figure 3, system configuration is identical with embodiment 1, and difference is, piezoelectric ceramic devices 6 add the signal of telecommunication as shown in Figure 3, when applying negative voltage, piezoelectric ceramic devices 6 thickness are less than initial condition, at this moment, increase pump power, crystal thermal lens 3 focal lengths shorten, when focal length is long less than the chamber, resonant cavity is in unstable state, and this moment, the loss of resonator was bigger, does not have laser output, pump light makes energy level population accumulation on the laser crystal 4, storage power; When voltage is zero, piezoelectric ceramic devices 6 caliper recovery initial conditions, driving outgoing mirror 5 motions is being parallel on the path of optical axis, make long shortening the in chamber of resonant cavity, when chamber length during less than crystal thermal lens 3 focal lengths, threshold value reduces, the concentrated at short notice induced transition of the last energy level particle of accumulation in the laser crystal 4, energy stored discharges rapidly, forms laser pulse output; When the voltage that applies when piezoelectric ceramic devices 6 changed, resonant cavity also alternately was in steady chamber and unsteady cavity state, obtained to transfer the effect of Q.
Claims (5)
1. steady chamber unsteady cavity Q-regulating method in the laser diode end-face pump solid laser, which comprises at least the pumping source laser diode (1) that constitutes laser, coupled system (2), laser resonant cavity, laser resonant cavity comprises laser crystal (4), outgoing mirror (5), laser diode (1) injects laser crystal (4) by optical coupling system (2) with pump light, laser crystal (4) is carried out continuous pumping, it is characterized in that: the light gasing surface at outgoing mirror (5) is fixed with piezoelectric ceramic devices (6), telescopic variation by signal of telecommunication control piezoelectric ceramic devices (6), drive outgoing mirror (5) along the optical axis move left and right, when telescopic variation makes resonant cavity chamber length less than crystal thermal lens (3) focal length, laser resonant cavity has laser output, when telescopic variation makes the resonant cavity chamber grow up in crystal thermal lens (3) focal length, resonant cavity is in unstable state, this moment, the loss of resonator was bigger, did not have laser output.
2. steady chamber unsteady cavity Q-regulating method in the laser diode end-face pump solid laser according to claim 1, it is characterized in that: described piezoelectric ceramic devices (6) are the discoid of center drilling.
3. steady chamber unsteady cavity Q-regulating method in the laser diode end-face pump solid laser according to claim 1, it is characterized in that: the telescopic variation of described signal of telecommunication control piezoelectric ceramic devices (6) is when adding positive voltage, piezoelectric ceramic devices (6) thickness is greater than initial condition, when voltage is zero, piezoelectric ceramic devices (6) caliper recovery initial condition.
4. steady chamber unsteady cavity Q-regulating method in the laser diode end-face pump solid laser according to claim 1, it is characterized in that: the telescopic variation of described signal of telecommunication control piezoelectric ceramic devices (6) is when adding positive voltage, piezoelectric ceramic devices (6) thickness is greater than initial condition, when voltage was negative voltage, piezoelectric ceramic devices (6) thickness was less than initial condition.
5. steady chamber unsteady cavity Q-regulating method in the laser diode end-face pump solid laser according to claim 1, it is characterized in that: the telescopic variation of described signal of telecommunication control piezoelectric ceramic devices (6) is when adding negative voltage, piezoelectric ceramic devices (6) thickness is less than initial condition, when voltage is zero, piezoelectric ceramic devices (6) caliper recovery initial condition.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888055A (en) * | 2010-06-23 | 2010-11-17 | 中国科学院上海光学精密机械研究所 | F-P cavity Q switch driven by piezoelectric ceramics |
| CN102208742A (en) * | 2011-05-06 | 2011-10-05 | 中国科学院上海光学精密机械研究所 | Conductively cooled high-repetition single frequency Nd: YAG Laser |
| CN103490278A (en) * | 2013-09-27 | 2014-01-01 | 西安电子科技大学 | Method of distribution of absorption of laser crystal radial-direction non-uniform doping control pump light |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| CN112152059A (en) * | 2020-10-30 | 2020-12-29 | 中国科学院光电技术研究所 | Laser Q-switching device and Q-switching method based on high-speed fast reflection mirror |
-
2009
- 2009-07-03 CN CN2009103039939A patent/CN101588012B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888055A (en) * | 2010-06-23 | 2010-11-17 | 中国科学院上海光学精密机械研究所 | F-P cavity Q switch driven by piezoelectric ceramics |
| CN102208742A (en) * | 2011-05-06 | 2011-10-05 | 中国科学院上海光学精密机械研究所 | Conductively cooled high-repetition single frequency Nd: YAG Laser |
| CN102208742B (en) * | 2011-05-06 | 2012-11-28 | 中国科学院上海光学精密机械研究所 | Conductively cooled high-repetition single frequency Nd: YAG Laser |
| CN103490278A (en) * | 2013-09-27 | 2014-01-01 | 西安电子科技大学 | Method of distribution of absorption of laser crystal radial-direction non-uniform doping control pump light |
| CN106129792A (en) * | 2016-07-15 | 2016-11-16 | 华中科技大学 | The resonant check lateral light pump arrangement of a kind of metastable state gas laser and method |
| WO2018010288A1 (en) * | 2016-07-15 | 2018-01-18 | 华中科技大学 | Resonance reinforced transverse optical pumping device and method for metastable gas laser |
| CN106129792B (en) * | 2016-07-15 | 2018-05-22 | 华中科技大学 | The resonant check lateral light pump arrangement and method of a kind of metastable state gas laser |
| CN112152059A (en) * | 2020-10-30 | 2020-12-29 | 中国科学院光电技术研究所 | Laser Q-switching device and Q-switching method based on high-speed fast reflection mirror |
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