CN112152059A - Laser Q-switching device and Q-switching method based on high-speed fast reflection mirror - Google Patents
Laser Q-switching device and Q-switching method based on high-speed fast reflection mirror Download PDFInfo
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- CN112152059A CN112152059A CN202011190616.1A CN202011190616A CN112152059A CN 112152059 A CN112152059 A CN 112152059A CN 202011190616 A CN202011190616 A CN 202011190616A CN 112152059 A CN112152059 A CN 112152059A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
Abstract
The invention discloses a laser Q-switching device and a Q-switching method based on a high-speed fast reflecting mirror. The Q value in the cavity is adjusted by accurately controlling the rapid deflection of the high-speed fast-reflection mirror and changing the loss in the cavity, so that a required laser pulse sequence is output. The high-speed fast reflection mirror can be placed in the middle of a light path by utilizing a reflection type Q-switching mode, higher and faster laser Q-switching is realized, and higher-frequency laser Q-switching and faster laser Q-switching capability can also be realized by serially connecting a plurality of high-speed fast reflection mirrors.
Description
Technical Field
The invention relates to the technical field of laser Q-switching devices, in particular to a laser Q-switching device and a laser Q-switching method based on a high-speed fast reflecting mirror.
Background
The laser Q-switching technology is an effective method for improving the output peak intensity of a laser, and the peak intensity can be improved by several orders of magnitude by compressing continuous laser energy to pulse emission with extremely narrow broadband. Common laser Q-switching technologies include electro-optic Q-switching, acousto-optic Q-switching, dye Q-switching, turning mirror Q-switching, and the like, wherein electro-optic Q-switching and acousto-optic Q-switching are mainly used. Electro-optical Q-switching is to add a step voltage to the crystal to adjust the reflection loss of photons in the cavity; the acousto-optic Q-switch is that a transducer is driven by a specific carrier frequency to generate ultrasonic waves with the same frequency and transmit the ultrasonic waves into an acousto-optic medium, so that refractive index change is formed in the medium, the propagation direction of light beams is changed, and the effect of changing the loss in a cavity is achieved.
Compared with the common Q-switching modes such as electro-optical Q-switching, acousto-optical Q-switching and the like, the rotating mirror Q-switching mode is difficult to be applied to the fields of laser processing, laser ranging and the like and gradually exits the market due to the complex mechanical structure, the difficulty in realizing special sequence Q-switching and the like due to mechanical inertia and the like. However, the reflective Q-switching method adopted by the turning mirror Q-switching can achieve higher light energy utilization rate compared with the transmissive Q-switching method, and meanwhile, the reflective Q-switching method also has a higher light intensity damage threshold, and has no limitation on the wavelength of modulation, and is particularly suitable for the wave bands which are difficult to achieve by the conventional Q-switching method of long-wave infrared and the like.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method aims at the problems that the mechanical structure of a turning mirror Q-switching mode is complex, and special sequence Q-switching cannot be realized. This device adopts high-speed quick reflection mirror to realize the laser of reflective and transfers Q, remains the advantage that traditional commentaries on classics mirror transfer Q mode possessed, solves the mechanism complicacy simultaneously and is difficult to realize the difficulty that the sequence transfers Q.
The technical scheme adopted by the invention is as follows: the laser Q-switching device based on the high-speed fast reflecting mirror is composed of a high-speed fast reflecting mirror module, a laser working substance module, a laser output mirror module, a fast reflecting mirror controller, a cooling module and a power supply module. There are two main operating states of the device: a. the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module form a stable laser resonant cavity, and continuous laser is output from the laser output mirror module; b. the high-speed fast reflecting mirror module generates large-angle deflection, so that the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module cannot form a stable laser resonant cavity, the laser output mirror module does not output laser, and the number of inversion particles of the laser working substance module is continuously increased and reaches a saturation threshold. When the high-speed fast reflecting mirror module is switched between the two states, the energy stored by a large number of reversed particles under the condition of the state b is released in a short time, and strong pulse laser with extremely high peak intensity is formed. By controlling the fast reflecting mirror controller, the high-speed fast reflecting mirror module can generate deflection of a specific sequence, so that laser pulses of the specific sequence are generated.
Furthermore, the high-speed fast reflecting mirror module adopts a piezoelectric ceramic or base electrostrictive material driver.
Furthermore, the high-speed fast reflecting mirror module generates large-angle deflection, and the deflection angle is larger than atan (S/L), wherein S is the diameter of an output laser beam, and L is the length of a resonant cavity.
Further, the two states are switched rapidly, and the switching time is required to be less than 200 mu s.
The laser Q-switching method based on the high-speed fast reflection mirror has two main working states: a. the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module form a stable laser resonant cavity, and continuous laser is output from the laser output mirror module; b. the high-speed fast reflecting mirror module generates large-angle deflection, so that the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module cannot form a stable laser resonant cavity, the laser output mirror module has no laser output, the reversed particle number of the laser working substance module continuously increases and reaches a saturation threshold value, when the high-speed fast reflecting mirror module is rapidly switched between the two states, the energy stored by a large number of reversed particle numbers under the condition of the state b is released in a short time, strong pulse laser with extremely high peak intensity is formed, and the high-speed fast reflecting mirror module can generate deflection of a specific sequence by controlling the fast reflecting mirror controller, so that laser pulses of the specific sequence are generated.
Compared with the prior art, the invention has the following advantages:
a. the high-speed fast reflecting mirror can be placed in the middle of the light path by utilizing a reflection type Q-switching mode, light rays pass through the fast reflecting mirror for substantially 2 times, and a larger deflection angle is introduced, so that higher and faster laser Q-switching can be realized, and higher-frequency laser Q-switching and faster laser Q-switching capability can be realized by connecting a plurality of high-speed fast reflecting mirrors in series;
b. the strain materials such as PZT in the high-speed fast reflecting mirror have the characteristic of fast response, and the volume and the structure are easy to be reduced under the condition of smaller driving load, so that the strain materials are the best choice for replacing the rotating mirror;
c. the quick response characteristic of the strain materials such as PZT can realize quick movement and quick stop, and compared with a high-speed galvanometer used in the traditional industry, the quick response characteristic has better control characteristic, thereby being convenient for realizing the generation of any sequence pulse signals.
Drawings
FIG. 1 is a schematic diagram of an implementation of a high-speed fast-reflection mirror-based laser Q-switching device;
FIG. 2 is a schematic diagram of a pulse laser waveform output by a high-speed fast-reflection mirror.
Detailed Description
The invention is further described with reference to the following figures and detailed description.
As shown in fig. 1, the laser Q-switching device based on the high-speed fast mirror of the present invention includes: the fast reflecting mirror comprises a high-speed fast reflecting mirror module 1, a laser working substance module 2, a laser output module 3, a fast reflecting mirror controller 4, a cooling module 5, a power supply module 6 and a laser full reflecting mirror 7. The fast reflector controller 4 drives the fast reflector module 1 to generate a large-amplitude high-speed mirror surface deflection according to the user requirement, so that the fast reflector module 1, the laser working substance module 2, the laser output module 3, the fast reflector controller 4 and the laser full reflector 7 form two states of the alternate work of a laser resonant cavity, namely high-intensity pulse laser output and inversion particle number accumulation, thereby continuously generating high peak intensity pulse laser with a specific rule. Because the high-speed fast reflecting mirror is arranged in the middle of the light path, and light passes through the high-speed fast reflecting mirror twice, the light deflection introduced by the fast reflecting mirror is doubled, and the light deflection with larger angle and quicker speed can be realized.
There are two main operating states of the device: a. the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module form a stable laser resonant cavity, and continuous laser is output from the laser output mirror module; b. the high-speed fast reflecting mirror module generates large-angle deflection, so that the high-speed fast reflecting mirror module, the laser working substance module and the laser output mirror module cannot form a stable laser resonant cavity, the laser output mirror module does not output laser, and the number of inversion particles of the laser working substance module is continuously increased and reaches a saturation threshold. When the high-speed fast reflecting mirror module is switched between the two states, the energy stored by a large number of reversed particles under the condition of the state b is released in a short time, and strong pulse laser with extremely high peak intensity is formed. By controlling the fast reflecting mirror controller, the high-speed fast reflecting mirror module can generate deflection of a specific sequence, so that laser pulses of the specific sequence are generated.
The high-speed fast reflecting mirror module adopts a piezoelectric ceramic or base electrostrictive material driver.
The high-speed fast reflecting mirror module generates large-angle deflection, and the deflection angle is larger than atan (S/L), wherein S is the diameter of an output laser beam, and L is the length of a resonant cavity.
The two states are switched rapidly, and the switching time is required to be less than 200 mu s.
As shown in fig. 2, the fast and high speed fast reflective mirror can be used to generate laser pulses with high peak value and narrow pulse width, the pulse width can be controlled within 500 ns, and pulse sequences with different time sequences can be generated according to design requirements.
The high-speed fast reflecting mirror can be placed in the middle of the light path by utilizing a reflection type Q-switching mode, so that higher and faster laser Q-switching can be realized, and higher-frequency laser Q-switching and faster laser Q-switching capability can also be realized by connecting a plurality of high-speed fast reflecting mirrors in series;
the strain materials such as PZT and the like have the characteristic of quick response, and the volume and the structure are easy to be reduced under the condition of smaller driving load, so that the strain materials are the best choice for replacing the rotating mirror;
the quick response characteristic of the strain materials such as PZT can realize quick action and quick stop, and has better control characteristic compared with a high-speed galvanometer, thereby being convenient for realizing the generation of any sequence pulse signals.
Claims (5)
1. Laser transfer Q device based on high-speed quick reflection mirror, its characterized in that: by high-speed quick reflection mirror module (1), laser working substance module (2), laser output module (3), quick reflection mirror controller (4), cooling module (5), power module (6) and laser are all reflected mirror (7) and are constituteed, and the device has two main operating condition: a. the high-speed fast reflecting mirror module (1), the laser working substance module (2) and the laser output module (3) form a stable laser resonant cavity, and continuous laser is output from the laser output module (3); b. the high-speed fast reflecting mirror module (1) deflects at a large angle, so that the high-speed fast reflecting mirror module (1), the laser working substance module (2) and the laser output module (3) cannot form a stable laser resonant cavity, the laser output module (3) does not output laser, the number of reversed particles of the laser working substance module (2) is continuously increased and reaches a saturation threshold, when the high-speed fast reflecting mirror module (1) is rapidly switched between the two states, the energy stored by a large number of reversed particles under the state b condition is released in a short time to form strong pulse laser with extremely high peak intensity, and the high-speed fast reflecting mirror module (1) can generate deflection of a specific sequence by controlling the fast reflecting mirror controller (4), so that laser pulses of the specific sequence are generated.
2. The high-speed fast-reflection-mirror-based laser Q-switching device according to claim 1, characterized in that: the high-speed fast reflecting mirror module (1) adopts a piezoelectric ceramic or electrostrictive material driver.
3. The high-speed fast-reflection-mirror-based laser Q-switching device according to claim 1, characterized in that: the high-speed fast reflecting mirror module (1) deflects at a large angle, the deflection angle is larger than atan (S/L), wherein S is the diameter of an output laser beam, and L is the length of a resonant cavity.
4. The high-speed fast-reflection-mirror-based laser Q-switching device according to claim 1, characterized in that: the two states are switched rapidly, and the switching time is required to be less than 200 mu s.
5. The laser Q-switching method based on the high-speed fast reflection mirror is characterized in that: there are two main operating states of the method: a. the high-speed fast reflecting mirror module (1), the laser working substance module (2) and the laser output module (3) form a stable laser resonant cavity, and continuous laser is output from the laser output module (3); b. the high-speed fast reflecting mirror module (1) deflects at a large angle, so that the high-speed fast reflecting mirror module (1), the laser working substance module (2) and the laser output module (3) cannot form a stable laser resonant cavity, the laser output module (3) does not output laser, the number of reversed particles of the laser working substance module (2) is continuously increased and reaches a saturation threshold, when the high-speed fast reflecting mirror module (1) is rapidly switched between the two states, the energy stored by a large number of reversed particles under the state b condition is released in a short time to form strong pulse laser with extremely high peak intensity, and the high-speed fast reflecting mirror module (1) can generate deflection of a specific sequence by controlling the fast reflecting mirror controller (4), so that laser pulses of the specific sequence are generated.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114583543A (en) * | 2022-03-04 | 2022-06-03 | 中国科学院理化技术研究所 | Pulse laser generating device and method based on small-angle fast-swinging reflection element |
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CN101588012A (en) * | 2009-07-03 | 2009-11-25 | 西安电子科技大学 | Q adjusting method for steady cavity/unsteady cavity of laser diode end-face pump solid laser |
CN104617474A (en) * | 2013-11-05 | 2015-05-13 | 中国科学院大连化学物理研究所 | Resonant cavity for pulse and line selection output of airflow hydrogen fluoride laser |
CN104701717A (en) * | 2013-12-10 | 2015-06-10 | 华中科技大学 | Device for improving rotary table chopper Q-switch laser performance and a Q-switch laser |
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2020
- 2020-10-30 CN CN202011190616.1A patent/CN112152059A/en active Pending
Patent Citations (6)
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US4918704A (en) * | 1989-01-10 | 1990-04-17 | Quantel International, Inc. | Q-switched solid state pulsed laser with injection seeding and a gaussian output coupling mirror |
US7130319B1 (en) * | 2003-08-01 | 2006-10-31 | Np Photonics, Inc. | All-fiber Q-switched laser |
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CN101588012A (en) * | 2009-07-03 | 2009-11-25 | 西安电子科技大学 | Q adjusting method for steady cavity/unsteady cavity of laser diode end-face pump solid laser |
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CN114583543A (en) * | 2022-03-04 | 2022-06-03 | 中国科学院理化技术研究所 | Pulse laser generating device and method based on small-angle fast-swinging reflection element |
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