CN101584017B - 离子注入机中束缚电子的技术 - Google Patents

离子注入机中束缚电子的技术 Download PDF

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Publication number
CN101584017B
CN101584017B CN2007800500956A CN200780050095A CN101584017B CN 101584017 B CN101584017 B CN 101584017B CN 2007800500956 A CN2007800500956 A CN 2007800500956A CN 200780050095 A CN200780050095 A CN 200780050095A CN 101584017 B CN101584017 B CN 101584017B
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CN
China
Prior art keywords
array
magnets
ion beam
beam path
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800500956A
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English (en)
Chinese (zh)
Other versions
CN101584017A (zh
Inventor
唐纳·L·史麦特雷克
葛登·C·恩吉尔
拉杰许·都蕾
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN101584017A publication Critical patent/CN101584017A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
CN2007800500956A 2006-12-07 2007-12-03 离子注入机中束缚电子的技术 Expired - Fee Related CN101584017B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/568,000 2006-12-07
US11/568,000 US7655922B2 (en) 2006-12-07 2006-12-07 Techniques for confining electrons in an ion implanter
PCT/US2007/086275 WO2008073747A1 (en) 2006-12-07 2007-12-03 Techniques for confining electrons in an ion implanter

Publications (2)

Publication Number Publication Date
CN101584017A CN101584017A (zh) 2009-11-18
CN101584017B true CN101584017B (zh) 2010-12-08

Family

ID=39272141

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800500956A Expired - Fee Related CN101584017B (zh) 2006-12-07 2007-12-03 离子注入机中束缚电子的技术

Country Status (6)

Country Link
US (1) US7655922B2 (enExample)
JP (1) JP5397624B2 (enExample)
KR (1) KR20090095603A (enExample)
CN (1) CN101584017B (enExample)
TW (1) TW200826140A (enExample)
WO (1) WO2008073747A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888652B2 (en) * 2006-11-27 2011-02-15 Nissin Ion Equipment Co., Ltd. Ion implantation apparatus
WO2008116190A2 (en) * 2007-03-21 2008-09-25 Advanced Ion Beam Technology, Inc. Beam control assembly for ribbon beam of ions for ion implantation
US8723113B2 (en) * 2008-05-30 2014-05-13 The State of Oregon Acting by and through the State Board of Higher Education of behalf of Oregon State University Radio-frequency-free hybrid electrostatic/magnetostatic cell for transporting, trapping, and dissociating ions in mass spectrometers
JP2011198738A (ja) * 2010-02-23 2011-10-06 Nissin Ion Equipment Co Ltd 複数の磁場集中部材をカバーする保護部材を備えたイオンビーム照射装置用磁石
CN102446679A (zh) * 2010-10-13 2012-05-09 北京中科信电子装备有限公司 新型大倾角单片式注入离子注入机离子光学系统
JP5495236B2 (ja) * 2010-12-08 2014-05-21 国立大学法人京都大学 イオンビーム照射装置及びイオンビーム発散抑制方法
US8686640B2 (en) * 2011-11-09 2014-04-01 E/G Electro-Graph Inc. Magnetic field reduction apparatus and magnetic plasma flood system for ion beam processing
EP2883237B1 (en) 2012-08-16 2020-11-25 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Electromagnetostatic electron-induced dissociation cell
JP6207418B2 (ja) * 2014-02-10 2017-10-04 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法
WO2016063740A1 (ja) * 2014-10-21 2016-04-28 国立研究開発法人理化学研究所 アンジュレータ磁石列及びアンジュレータ
CN116666179B (zh) * 2023-06-21 2023-12-12 广东省新兴激光等离子体技术研究院 分析磁铁结构及宽幅离子源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731598A (en) * 1987-08-24 1988-03-15 The United States Of America As Represented By The Secretary Of The Army Periodic permanent magnet structure with increased useful field
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5399871A (en) * 1992-12-02 1995-03-21 Applied Materials, Inc. Plasma flood system for the reduction of charging of wafers during ion implantation
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204920B2 (ja) 1997-03-22 2001-09-04 川崎重工業株式会社 永久磁石型偏向磁石装置および電子蓄積リング
GB2331179B (en) * 1997-11-07 2002-03-20 Applied Materials Inc Method of preventing negative charge build up on a substrate being implanted w ith positive ions and ion implantation apparatus for performing such a method
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6414329B1 (en) 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
JP3869680B2 (ja) 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置
JP3840108B2 (ja) 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6891174B2 (en) 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
JP4305499B2 (ja) * 2006-11-27 2009-07-29 日新イオン機器株式会社 イオン注入装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731598A (en) * 1987-08-24 1988-03-15 The United States Of America As Represented By The Secretary Of The Army Periodic permanent magnet structure with increased useful field
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5399871A (en) * 1992-12-02 1995-03-21 Applied Materials, Inc. Plasma flood system for the reduction of charging of wafers during ion implantation
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平10-270197A 1998.10.09

Also Published As

Publication number Publication date
JP5397624B2 (ja) 2014-01-22
JP2010512620A (ja) 2010-04-22
US7655922B2 (en) 2010-02-02
US20080135775A1 (en) 2008-06-12
CN101584017A (zh) 2009-11-18
WO2008073747A1 (en) 2008-06-19
TW200826140A (en) 2008-06-16
KR20090095603A (ko) 2009-09-09

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Granted publication date: 20101208