CN101578709A - 单结太阳能电池装置所采用的薄膜式金属氧化物半导体材料 - Google Patents
单结太阳能电池装置所采用的薄膜式金属氧化物半导体材料 Download PDFInfo
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- CN101578709A CN101578709A CNA2008800016271A CN200880001627A CN101578709A CN 101578709 A CN101578709 A CN 101578709A CN A2008800016271 A CNA2008800016271 A CN A2008800016271A CN 200880001627 A CN200880001627 A CN 200880001627A CN 101578709 A CN101578709 A CN 101578709A
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- 239000000463 material Substances 0.000 title claims description 96
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 41
- 150000004706 metal oxides Chemical group 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 239000010409 thin film Substances 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 6
- 229920001940 conductive polymer Polymers 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002086 nanomaterial Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229960004643 cupric oxide Drugs 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000006096 absorbing agent Substances 0.000 abstract 3
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000005670 electromagnetic radiation Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000002178 crystalline material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002159 nanocrystal Substances 0.000 description 5
- 239000002061 nanopillar Substances 0.000 description 5
- 239000002071 nanotube Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- -1 nanometer rods Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002283 diesel fuel Substances 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003502 gasoline Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US97639107P | 2007-09-28 | 2007-09-28 | |
US60/976,391 | 2007-09-28 | ||
US12/237,369 | 2008-09-24 |
Publications (1)
Publication Number | Publication Date |
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CN101578709A true CN101578709A (zh) | 2009-11-11 |
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CNA2008800016271A Pending CN101578709A (zh) | 2007-09-28 | 2008-09-26 | 单结太阳能电池装置所采用的薄膜式金属氧化物半导体材料 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104993004A (zh) * | 2015-06-02 | 2015-10-21 | 浙江大学 | 一种氧化亚铜基异质结太阳能电池及其制备方法 |
CN106129174A (zh) * | 2016-07-07 | 2016-11-16 | 深圳大学 | 一种掺氟氧化亚铜薄膜及其制备方法 |
CN108323212A (zh) * | 2016-02-18 | 2018-07-24 | 田永权 | 太阳能电池及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1703782A (zh) * | 2002-09-30 | 2005-11-30 | 米亚索尔公司 | 薄膜太阳能电池大规模生产的制造装置与方法 |
US20060130890A1 (en) * | 2004-12-20 | 2006-06-22 | Palo Alto Research Center Incorporated. | Heterojunction photovoltaic cell |
-
2008
- 2008-09-26 CN CNA2008800016271A patent/CN101578709A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1703782A (zh) * | 2002-09-30 | 2005-11-30 | 米亚索尔公司 | 薄膜太阳能电池大规模生产的制造装置与方法 |
US20060130890A1 (en) * | 2004-12-20 | 2006-06-22 | Palo Alto Research Center Incorporated. | Heterojunction photovoltaic cell |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104993004A (zh) * | 2015-06-02 | 2015-10-21 | 浙江大学 | 一种氧化亚铜基异质结太阳能电池及其制备方法 |
CN104993004B (zh) * | 2015-06-02 | 2017-04-12 | 浙江大学 | 一种氧化亚铜基异质结太阳能电池及其制备方法 |
CN108323212A (zh) * | 2016-02-18 | 2018-07-24 | 田永权 | 太阳能电池及其制备方法 |
CN108323212B (zh) * | 2016-02-18 | 2022-08-23 | 田永权 | 太阳能电池及其制备方法 |
CN106129174A (zh) * | 2016-07-07 | 2016-11-16 | 深圳大学 | 一种掺氟氧化亚铜薄膜及其制备方法 |
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Address after: California, USA Applicant after: STION Corp. Address before: California, USA Applicant before: STION Solar Cell Co.,Ltd. |
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Owner name: DEVELOPMENT EXPERT COMPANY Free format text: FORMER OWNER: CM MANUFACTURING INC. Effective date: 20150206 Owner name: HETF SOLAR INC. Free format text: FORMER OWNER: DEVELOPMENT EXPERT COMPANY Effective date: 20150206 |
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Address after: California, USA Applicant after: STION Corp. Address before: California, USA Applicant before: HETF solar Address after: California, USA Applicant after: CM manufacturing Co. Address before: California, USA Applicant before: Stion Corp. |
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Effective date of registration: 20150206 Address after: California, USA Applicant after: HETF solar Address before: California, USA Applicant before: Development Specialist Effective date of registration: 20150206 Address after: California, USA Applicant after: Development Specialist Address before: California, USA Applicant before: CM manufacturing Co. |
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