CN101576681B - transflective display unit - Google Patents

transflective display unit Download PDF

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Publication number
CN101576681B
CN101576681B CN 200810091394 CN200810091394A CN101576681B CN 101576681 B CN101576681 B CN 101576681B CN 200810091394 CN200810091394 CN 200810091394 CN 200810091394 A CN200810091394 A CN 200810091394A CN 101576681 B CN101576681 B CN 101576681B
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reflective
area
transistor
voltage
region
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CN101576681A (en
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李宜锦
杨长浩
陈建宏
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Chi Mei Optoelectronics Corp
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Innolux Display Corp
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Abstract

A transflective display unit includes a first reflective region and a transmissive region, wherein the transmissive region has a second reflective region. The reflectivity of the semi-transmission semi-reflection display unit is adjusted by adjusting the area ratio of the second reflection area to the first reflection area, so that the reflectivity accords with the change relation of the transmissivity and the driving voltage.

Description

Half-transmitting half-reflecting display unit
Technical field
The present invention relates to a kind of transflective displays (Transflective Display), and relate in particular to the display unit of the identical transflective displays of a kind of thickness of liquid crystal.
Background technology
General LCD can be divided into transmission-type, reflective, and the half-transmission half-reflection type three major types.Wherein transflective liquid crystal display can use under the situation of bright and clear and insufficient light simultaneously, and therefore applicable scope is wider.
In semi-transmission semi-reflection LCD, can in a pixel, be divided into transmission area and echo area usually.The light source of transmission area is from backlight, and the light source of echo area is then from surround lighting.When impressed voltage in liquid crystal layer, change liquid crystal layer to the retardation of phase place, by Polarizer bright dark variation is arranged again.Because the transmission range of light in the liquid crystal layer of echo area approximately is the twice of the transmission range of light in the liquid crystal layer of transmission area, therefore from the echo area and the liquid crystal layer of transmission area light is caused different phase-delay quantities, so the trend that the echo area luminance against voltage changes is with the transmission area difference.As shown in Figure 1, Fig. 1 is light intensity and the voltage curve according to conventional art.This liquid crystal is vertical orientation, and wherein curve C 1 is represented the light relative intensity of echo area, the light relative intensity of curve C 2 expression transmission areas.When impressed voltage to 3 volt, reflectivity has reached 100%, but transmissivity is only to 60%.In this case, the display effect of transflective liquid crystal display is not good.
Therefore, if want the display effect that reaches preferable, then need the light intensity curve of echo area and transmission area is adjusted to close position, make the variation relation of itself and voltage close.
Summary of the invention
The invention provides a kind of half-transmitting half-reflecting display unit, be applicable to transflective displays, adjust light reflectance by increase by a layer insulating in the echo area with increase new echo area at transmission area, make the voltage relationship of itself and light transmittance close.And, the mode of utilizing voltage to be coupled, the liquid crystal cross-pressure of adjustment echo area makes the relation curve between reflectivity and transmissivity and the voltage close, to improve display quality.
The present invention proposes a kind of half-transmitting half-reflecting display unit, comprises first echo area, transmission area, the first transistor and transistor seconds, wherein has second echo area in the transmission area.First echo area is used for showing first image, transmission area then is used for showing second image, wherein first echo area comprises first reflecting electrode, first insulation course, the first echo area electric capacity and first memory capacitance at least, wherein above-mentioned first reflecting electrode is formed on first substrate, and this first insulation course then is formed between this first reflecting electrode and this first substrate.Transmission area comprises transparency electrode, second reflecting electrode, transmission area electric capacity, the second echo area electric capacity and second memory capacitance at least, and above-mentioned transparency electrode is adjacent with second reflecting electrode and be formed on first substrate.The first transistor is coupled between first echo area and the data line.Transistor seconds is coupled between transmission area and this data line.The grid of the first transistor and transistor seconds is coupled to same sweep trace.Wherein, first echo area and transmission area have second substrate, common electrode and liquid crystal layer respectively, this common electrode is formed on this second substrate and is adjacent to this liquid crystal layer, this liquid crystal layer is between first substrate and second substrate, this first echo area is adjacent with this transmission area, and this second reflecting electrode forms second echo area.Wherein, first echo area and transmission area are controlled by the first transistor, transistor seconds respectively, and first reflecting electrode is arranged on first insulation course, the capacitive dielectric layer that in first echo area, does not have equivalence, one end of the transmission area electric capacity in the transmission area, the second echo area electric capacity and second memory capacitance is coupled to the source terminal of transistor seconds, and an end of the first echo area electric capacity in first echo area and first memory capacitance is coupled to the source terminal of the first transistor.Wherein, first echo area is separated by the first transistor, transistor seconds with the pixel electrode in transmission area two zones, and the liquid crystal cross-pressure when adjusting first echo area and transmission area respectively and drive by first memory capacitance and second memory capacitance.Wherein, pixel drive voltage is provided to transmission area and first echo area; Coupled voltages is provided and is coupled to first echo area via first memory capacitance; And coupled voltages is adjusted, to adjust the voltage difference at electric capacity two ends, first echo area.Wherein, when coupled voltages is adjusted, when pixel drive voltage is the positive polarity driving, make coupled voltages less than common voltage; And when pixel drive voltage is the negative polarity driving, make coupled voltages greater than common voltage.
In an embodiment of the present invention, above-mentioned transmission area also comprises second insulation course and common electrode, and above-mentioned second insulation course is formed between first substrate and the transparency electrode.
In another embodiment of the present invention, above-mentioned second reflecting electrode is formed by aluminium, and second substrate is formed by colored filter.
In another embodiment of the present invention, above-mentioned first echo area is identical with the thickness of liquid crystal of transmission area, and transmission area operates in first voltage range, and first echo area operates in second voltage range, and the voltage difference of second voltage range is less than the voltage difference of first voltage range.
In another embodiment of the present invention, the phase-delay quantity of above-mentioned first echo area is 1/4th optical wavelength.The phase-delay quantity of above-mentioned transmission area is 1/2nd optical wavelength.
From another viewpoint, this case proposes a kind of half-transmitting and half-reflecting liquid crystal indicator again, comprises first substrate, second substrate, liquid crystal layer, the first transistor and transistor seconds, and wherein first substrate comprises reflective display region and transmission viewing area.Reflective display region comprises first reflecting electrode, first insulation course, the first echo area electric capacity and first memory capacitance, the transmission viewing area then comprises transparency electrode, second reflecting electrode, transmission area electric capacity, the second echo area electric capacity and second memory capacitance, and wherein second reflecting electrode is positioned among the transparency electrode.Second substrate comprises common electrode and liquid crystal layer, and above-mentioned liquid crystal layer is formed between first substrate and second substrate.The first transistor is coupled between reflective display region and the data line.Transistor seconds is coupled between transmission area and the data line.Wherein, the grid of the first transistor and transistor seconds is coupled to same sweep trace.Wherein, reflective display region and transmission area are controlled by the first transistor, transistor seconds respectively, and first reflecting electrode is arranged on first insulation course, the capacitive dielectric layer that in reflective display region, does not have equivalence, one end of the transmission area electric capacity in the transmission area, the second echo area electric capacity and second memory capacitance is coupled to the source terminal of transistor seconds, and an end of the first echo area electric capacity in the reflective display region and first memory capacitance is coupled to the source terminal of the first transistor.Wherein, the pixel electrode in reflective display region and transmission area two zones is separated by the first transistor, transistor seconds, and the liquid crystal cross-pressure when adjusting reflective display region and transmission area respectively and drive by first memory capacitance and second memory capacitance.Wherein, pixel drive voltage is provided to transmission viewing area and reflective display region; Coupled voltages is provided and is coupled to reflective display region via first memory capacitance; And coupled voltages is adjusted, to adjust the voltage difference at electric capacity two ends, first echo area.Wherein, when coupled voltages is adjusted, when pixel drive voltage is the positive polarity driving, make coupled voltages less than common voltage; And when pixel drive voltage is the negative polarity driving, make coupled voltages greater than common voltage.
In an embodiment of the present invention, above-mentioned first substrate also comprises insulation course, be formed at the both sides up and down of first reflecting electrode or be formed at first reflecting electrode and first substrate between.
The present invention plates aluminium sheet at the part area of original transmission area, increase by second echo area, be that λ/4(λ is optical wavelength by second echo area and original designed phase retardation again) first echo area, with different area ratios, come the compensatory reflex rate to the intermediate luminance part of voltage relationship, make it more meet transmissivity to voltage relationship figure, and then reach the display effect of improving semi-transmission semi-reflection LCD.
For above and other objects of the present invention, feature and advantage can be become apparent, the preferred embodiments of the present invention cited below particularly, and by reference to the accompanying drawings, be described in detail below.
Description of drawings
Fig. 1 is according to the light intensity of conventional art and voltage curve;
Fig. 2 A is the structural drawing according to the half-transmitting half-reflecting display unit of first embodiment of the invention;
Fig. 2 B is according to the light relative intensity of Fig. 2 A and voltage curve figure;
Fig. 2 C is the structural representation according to the half-transmitting half-reflecting display unit of first embodiment of the invention;
Fig. 2 D is the equivalent image element circuit figure according to Fig. 2 C;
Fig. 3 A is the structural representation according to the half-transmitting half-reflecting display unit of second embodiment of the invention;
Fig. 3 B is the equivalent image element circuit figure according to Fig. 3 A;
Fig. 4 A is the driving method according to the half-transmitting half-reflecting display unit of third embodiment of the invention;
Fig. 4 B is the signal waveforms according to the 3rd embodiment;
Fig. 4 C is according to the light relative intensity of third embodiment of the invention and voltage curve figure.
Embodiment
First embodiment
Fig. 2 A is the structural representation according to the half-transmitting half-reflecting display unit of first embodiment of the invention.Half-transmitting half-reflecting display unit 200 comprises first echo area 201 and transmission area 203, wherein has second echo area 204 in the transmission area 203.First echo area 201 is made of first substrate 210, first reflecting electrode 220, insulation course 230, liquid crystal layer 260, common electrode 270 and second substrate 280.First reflecting electrode 220 is formed on first substrate 210, and insulation course 230 is formed on first reflecting electrode 220, and liquid crystal layer 260 then is disposed between insulation course 230 and the common electrode 270, and common electrode 270 is formed on second substrate 280.Transmission area 203 is made of first substrate 210, insulation course 240, transparency electrode 250, liquid crystal layer 260, common electrode 270 and second substrate 280.Insulation course 240 is formed between first substrate 210 and the transparency electrode 250, and liquid crystal layer 260 then is disposed between transparency electrode 250 and the common electrode 270, and common electrode 270 is formed on second substrate 280.In addition, comprise also in the zone of transparency electrode 250 that second reflecting electrode 225 is to form second echo area 204.
In addition, it should be noted that insulation course 230 can be formed at the both sides up and down of first reflecting electrode 220 or be formed at first reflecting electrode 220 and first substrate 210 between.Insulation course 230,240 can utilize with technology and form or utilize not that people having a common goal's technology forms, and that is to say that insulation course 230,240 can be same layer insulating or the independent insulation course that forms, and present embodiment is not limited.
In the present embodiment, second substrate 280 and first substrate 210 for example are glass substrate, 280 of second substrates can be replaced by the glass substrate of colored filter (not illustrating), and common electrode 270 can be formed directly on the glass substrate of colored filter, and is adjacent to liquid crystal layer.Insulation course 230 for example is transparent material, and light transmissive insulation course 230 via after 220 reflections of first reflecting electrode, shows corresponding light intensity through liquid crystal layer 260 more again.Common electrode 270 for example is tin indium oxide (ITO) or transparent conductive material (as: materials such as ITO, TiO2, Ti and TiN) with 250 of transparency electrodes, wherein common electrode 270 is coupled to common voltage (common voltage, or abbreviate VCOM as) usually.First reflecting electrode 220 and 225 of second reflecting electrodes in second reflector space 204 for example are aluminium sheets.The area size of second reflecting electrode 225 then can be decided according to design requirement, via the area ratio of adjusting second reflecting electrode 225 and first reflecting electrode 220, can adjust the light intensity and the voltage curve that cause the echo area, i.e. reflectivity.
The light source of transmission area 203 is not from backlight (illustrating), and the light source of first echo area 201 is then from surround lighting.When impressed voltage during in liquid crystal layer, can change the phase-delay quantity (retardation) of liquid crystal layer, by last Polarizer (being arranged on usually on second substrate 280) bright dark variation is arranged again.The course of light then as the arrow among Fig. 2 A indicates, in transmission area 203 directly by backlight transflective liquid crystal layer 260.In first echo area 201 and second echo area 204, light then forms via reflection.
Because insulation course 230 can make the liquid crystal layer 260 suffered essence cross-pressures (common electrode 270 is to the voltage difference on insulation course 230 surfaces) in the echo area 201 of winning descend, therefore under identical driving voltage (pixel drive voltage that is provided by data line usually), its reflectivity is lower.And in conjunction with the second higher echo area of reflectivity, formed reflectivity then can have close voltage curve with the light transmittance of transmission area.
In the present embodiment, the light relative intensity that echo area (comprising first echo area 201 and second echo area 204) is produced and the relation of voltage are referred to as reflectivity, and the light relative intensity that transmission area (deducting the transmission area 203 of second echo area 204) is produced and the relation of voltage are referred to as transmissivity.With reference to Fig. 2 B, Fig. 2 B is according to the light relative intensity of Fig. 2 A and voltage curve figure.The light reflectance of curve C 201 expressions first echo area 201 and the relation curve between the voltage, the reflectivity that cause 204 expressions of curve C, second echo area 204 and the relation curve between the voltage, curve C 20 is then represented comprehensive first echo area 201 and the light reflectance of second echo area 204 and the relation curve between the voltage.The light transmittance of 203 expressions of curve C transmission area 203 and the relation curve between the voltage.Owing in the present embodiment, on transparency electrode 250, utilize aluminium sheet to form second reflecting electrode 225, therefore increased the effect of light reflection.Change curve between the formed curve C 20 of light intensity of comprehensive first echo area 201 and second echo area 204, itself and voltage is comparable to curve C 203 (dotted portion).In other words, in required voltage-operated interval, reflectivity and the transmissivity of half-transmitting half-reflecting display unit 200 are close, and its display quality is preferable.
In the present embodiment, transmission area 203 is identical with the thickness of liquid crystal of first echo area 201, and insulation course 230 can make the liquid crystal layer 260 in first echo area 201 produce less phase-delay quantity, for example is half of transmission area 203.Because light needs to pass through twice liquid crystal layer 260 in first echo area 201, therefore optical wavelength is λ if make, the phase-delay quantity that then can design transmission area 203 is λ/2, the phase-delay quantity of first echo area 201 is λ/4, so just can make first echo area 201 identical with the phase-delay quantity that transmission area 203 causes, and then make transmissivity and reflectivity to the relationship consistency of voltage.In addition, by adjusting the area ratio of second echo area 204 and first echo area 201, can change the reflectivity of half-transmitting half-reflecting display unit 200 integral body, and the configuration of second echo area 204 is not limited to position and quantity thereof among Fig. 2 B, also can be formed by a plurality of discrete areas, be had the effect of adjusting reflectivity equally.
Because different pixel designs can correspond to different dot structures, corresponding on-off element (as transistor) and memory capacitance also can be set simultaneously, therefore above-mentioned Fig. 2 A only illustrates the main capacitance structure in the dot structure, be used for explanation present embodiment major technology means, second echo area just is set in transmission area.Present embodiment is not limited to the framework of above-mentioned Fig. 2 A, and present embodiment can cooperate different pixel designs, and the second required echo area is set in transmission area.
Next, with reference to Fig. 2 C, Fig. 2 C is the structural representation according to the half-transmitting half-reflecting display unit of first embodiment of the invention.What Fig. 2 C and Fig. 2 A main difference were further to illustrate transistor M201 and memory capacitance CST arranges position and more the shows in detail first echo area capacitor C R1, capacitive dielectric layer COG, the second echo area capacitor C R2, transmission area capacitor C T and the structure of memory capacitance CST1 in actual process.
First reflecting electrode 220 of first echo area 201 is formed by the 3rd metal level (for example aluminium sheet) M3, and be positioned among the insulation course 230 (being 220 the both sides up and down that insulation course 230 is formed at first reflecting electrode), can adjust the capacitance of capacitive dielectric layer COG by the position that first reflecting electrode 220 forms, also can adjust the proportionate relationship between the pixel drive voltage that liquid crystal cross-pressure (i.e. the voltage difference at capacitor C R1 two ends, first echo area) in first echo area 201 and data line DL transmit simultaneously.When the insulation course 230 between first reflecting electrode 220 and the liquid crystal layer 260 is more thin, the pixel drive voltage that the voltage difference at capacitor C R1 two ends, first echo area (can be known by inference by the thickness of Electric Field Distribution and liquid crystal layer 260) then more transmits near data line DL also can be adjusted reflectivity in first echo area 201 by adjusting insulation course 230 thickness between first reflecting electrode 220 and the liquid crystal layer 260.
Second reflecting electrode 225 is formed and is electrically connected to transparency electrode 250 by the 3rd metal level M3 equally, be used for forming second echo area 204 at transmission area 203, wherein second reflecting electrode 225 has identical current potential with transparency electrode 250 because of mutual the electrical connection.When sweep trace SL turn-on transistor M201, data line DL can transmit pixel drive voltage to half-transmitting half-reflecting display unit 290 and make first reflecting electrode 220, second reflecting electrode 225 and transparency electrode 250 have identical pixel drive voltage via transistor M201.In the present embodiment, can utilize the area size of second reflecting electrode 225 to adjust reflectivity and the transmissivity of half-transmitting half-reflecting display unit 290, make both change in voltage curves comparatively close to improve the picture display quality.
Aspect the pixel-driving circuit of half-transmitting half-reflecting display unit, the gate terminal GT of transistor M201 is coupled to sweep trace, its drain electrode end DT is coupled to data line, and its source terminal then is electrically connected to first reflecting electrode 220, second reflecting electrode 225 and transparency electrode 250 via the second metal level M2, the 3rd metal level M3.And the end points P1 of memory capacitance CST is except can being coupled to common voltage, also can be applicable to improve the driving effect of half-transmitting half-reflecting display unit, for example the end points P1 with memory capacitance CST is coupled to coupled voltages, via adjusting overdrive the to reach driving effect of (overdriving) of coupled voltages.
In addition, it should be noted that, use can be used or merge to the above-mentioned area size of utilizing second reflecting electrode 225 separately with the two kinds of technological means of insulation course 230 thickness between adjustment first reflecting electrode 220 and the liquid crystal layer 260, reflectivity and transmissivity that can more effective adjustment half-transmitting half-reflecting display unit 290.
Fig. 2 D is the equivalent image element circuit figure according to Fig. 2 C.Below explanation is simultaneously with reference to Fig. 2 A, Fig. 2 C, and image element circuit 295 comprises transistor M201, the first echo area capacitor C R1, capacitive dielectric layer COG, the second echo area capacitor C R2, transmission area capacitor C T and memory capacitance CST.First echo area 201 mainly comprises first echo area capacitor C R1 and the capacitive dielectric layer COG, and transmission area 203 mainly comprises transmission area capacitor C T.In the technology of general display panels, transistor M201 and memory capacitance CST are made of the first metal layer M1, the second metal level M2, semiconductor layer (semiconductor electrode is called for short SE) and separation layer usually, shown in Fig. 2 C.
Wherein the end of the second echo area capacitor C R2, transmission area capacitor C T and memory capacitance CST (being common electrode 270) is coupled to common voltage VCOM, the other end (i.e. first reflecting electrode 220, second reflecting electrode 225 and transparency electrode 250) is coupled to transistor M201, the first echo area capacitor C R1 and capacitive dielectric layer COG then coupled in series between transistor M201 and common voltage VCOM.Transistor M201 is coupled to data line DL and sweep trace SL, and when transistor M201 was scanned line SL conducting, data line DL can charge to the electric capacity in the image element circuit 295 via transistor.
Corresponding diagram 2D and Fig. 2 C because have insulation course 230 and liquid crystal layer 260 between first reflecting electrode 220 and the common electrode 270, therefore form capacitive dielectric layer COG and the first echo area capacitor C R1.Transparency electrode 250 forms transmission area capacitor C T with 270 of common electrodes, and second reflecting electrode 225 forms the second echo area capacitor C R2 with 270 of common electrodes.About the correspondence position of element among Fig. 2 D and Fig. 2 C, please directly with reference to indicating and the element title among the figure, be not described in detail at this.
In the present embodiment, a dot structure in the half-transmitting half-reflecting display unit 200 expression display panels, wherein first echo area 201 is used for showing first image, and transmission area 203 then is used for showing second image, then forms a pixel image in conjunction with first image and second image.Owing to still comprise second echo area 204 in the transmission area 203, therefore can be used to strengthen the reflecting effect of whole pixel.With regard to the pixel structure, first reflecting electrode can be considered as reflective display region, transparency electrode and second reflecting electrode then are considered as the transmission viewing area.
Second embodiment
Fig. 3 A is the structural representation according to the half-transmitting half-reflecting display unit of second embodiment of the invention.Half-transmitting half-reflecting display unit 300 in the present embodiment comprises transmission area 203 and first echo area 201 equally, and still comprises second echo area 204 in the transmission area 203.Fig. 3 A and the main difference of Fig. 2 C are that first echo area 201 among Fig. 3 A is controlled by transistor M301, M303 respectively with transmission area 203, and first reflecting electrode 220 is arranged on the insulation course 230, does not therefore have the capacitive dielectric layer of equivalence in first echo area 201.
The end of the transmission area capacitor C T of transmission area 203, the second echo area capacitor C R2 and memory capacitance CST2 can be coupled to the source terminal of transistor M303, and the end of the first echo area capacitor C R1 in first echo area 201 and memory capacitance CST1 can be coupled to the source terminal of transistor M301.The drain electrode end DT of transistor M301, M303 is coupled to data line, and its gate terminal GT then all is coupled to sweep trace.In other words, namely be that half-transmitting half-reflecting display unit 300 is divided into two sub-pixel structures, be respectively first echo area 201 and transmission area 203.Because first echo area 201 is opened by transistor M301, M303 branch with the pixel electrode in 203 liang of zones of transmission area, the liquid crystal cross-pressure in the time of therefore can adjusting its driving respectively by memory capacitance CST1 and CST2.Wherein memory capacitance CST1, CST2 can be made of the first metal layer M1 in the liquid crystal panel technology and the second metal level M2.
When the sweep trace activation, transistor M301, M303 meeting conducting, data line just can charge to the first echo area capacitor C R1, memory capacitance CST1, transmission area capacitor C T, the second echo area electric capacity and memory capacitance CST2.Present embodiment can be adjusted the average reflectance of whole half-transmitting half-reflecting display unit 300 by the area size of adjusting second reflecting electrode 222, makes the change in voltage curve of itself and transmissivity close.In addition, because first echo area 201 is controlled by transistor M301, M303 respectively with transmission area 203, therefore present embodiment also can be respectively adjusted liquid crystal cross-pressure in first echo area 201 and the transmission area 203 via end points P2, the P3 of memory capacitance CST1, CST2, makes the reflectivity of half-transmitting half-reflecting display unit 300 and transmissivity close.
Next, simultaneously with reference to Fig. 3 A, Fig. 3 B, Fig. 3 B is the equivalent image element circuit figure according to Fig. 3 A.Image element circuit 310 comprises transistor M301, M303, the first echo area capacitor C R1, memory capacitance CST1, transmission area capacitor C T, second echo area capacitor C R2 and the memory capacitance CST2.Wherein the first echo area capacitor C R1, memory capacitance CST1 represent the equivalent electrical circuit in first echo area 201, and transmission area capacitor C T, the second echo area capacitor C R2 and memory capacitance CST2 represent the equivalent electrical circuit in the transmission area 203.The correspondence position of element please directly with reference to number in the figure and element title, is not described in detail at this among Fig. 3 A and Fig. 3 B.
Transistor M301 is coupled between the first echo area capacitor C R1, memory capacitance CST1 and the data line DL, transistor M303 then is coupled between transmission area capacitor C T, the second echo area capacitor C R2, memory capacitance CST2 and the data line DL, and the grid of transistor M301, M303 all is coupled to sweep trace SL.The other end of the first echo area capacitor C R1 (common electrode 270) is coupled to common voltage VCOM, and the other end of memory capacitance CST1 (end points P2) then is coupled to coupled voltages VST.The other end of transmission area capacitor C T and the second echo area capacitor C R2 (common electrode 270) all is coupled to common voltage VCOM, and the other end of memory capacitance CST2 (end points P3) then is coupled to common voltage VCOM equally.
In the present embodiment, except can utilize second echo area 204 arrange area adjust reflectivity, also can utilize coupled voltages VST to adjust the reflectivity of first echo area 201.Via memory capacitance CST1, coupled voltages VST can be coupled to the pixel electrode in first echo area 201, to adjust its driving voltage V2.Thus, just can adjust light relative intensity and voltage curve (being reflectivity) in first echo area 201, make the relation curve of reflectivity and transmissivity close, to improve the picture display quality.In addition, because actual dot structure can be different because of liquid crystal panel technology, array (array) design, so the present invention is not limited to the structure of above-mentioned Fig. 2 C and Fig. 3 A.And about all the other CONSTRUCTED SPECIFICATION among above-mentioned Fig. 2 C and Fig. 3 A, those skilled in the art openly should know by inference easily via of the present invention, do not add tired stating at this.
The 3rd embodiment
From another viewpoint, above-described embodiment can be summarized a kind of half-transmitting half-reflecting display unit reflectivity and asymmetric driving method of transmissivity of improving.Fig. 4 A is the driving method according to the half-transmitting half-reflecting display unit of third embodiment of the invention.The driving method of present embodiment is applicable to the half-transmitting half-reflecting display unit 300 that drives among above-mentioned Fig. 3 A embodiment.This driving method comprises the following steps: that step S410 provides pixel drive voltage to transmission area and first echo area; Step S420 provides coupled voltages, is coupled to first echo area via memory capacitance, and step S430 adjustment coupled voltages, to adjust the liquid crystal cross-pressure of first echo area.
Adjusting the main usefulness of coupled voltages is intended to make the reflectivity of half-transmitting half-reflecting display unit 300 close under same pixel drive voltage with transmissivity.Therefore, cooperate the structure of half-transmitting half-reflecting display unit 300, also comprise in the step of step S430 adjustment coupled voltages: when pixel drive voltage is the positive polarity driving, make this coupled voltages less than common voltage; And when pixel drive voltage is the negative polarity driving, make coupled voltages greater than common voltage.Common voltage is transmission area 203 and the first echo area 201 common voltage current potential when driving, and can be specific voltage current potential or ground voltage current potential.Under identical pixel drive voltage, by adjusting coupled voltages, can change the liquid crystal cross-pressure in first echo area 201, make the transmissivity of half-transmitting half-reflecting display unit 300 and reflectivity to the relationship consistency of voltage.In another embodiment of the present invention, also can be via the coupling capacitance (end points P3) of transmission area, provide coupled voltages to the pixel electrode of transmission area to adjust the liquid crystal cross-pressure in the transmission area, transmissivity is adjusted near reflectivity.And the size of coupled voltages is then decided according to the original curve location of transmissivity and reflectivity, and those skilled in the art openly should know by inference easily via of the present invention, does not add tired stating at this.
For more clearly demonstrating the driving method of present embodiment, below explanation is simultaneously with reference to Fig. 3 A, 3B.In panel, half-transmitting half-reflecting display unit is arranged with array usually, among Fig. 3 B then only with the equivalent image element circuit of single half-transmitting half-reflecting display unit.In data line DL output pixel driving voltage to the first echo area 201 with the pixel electrode (i.e. first reflecting electrode 220, second reflecting electrode 225 and transparency electrode 250) of transmission area 203 afterwards, sweep trace SL can close transistor M301, M303.At this moment, coupled voltages VST can change its voltage potential along with the driving polarity of pixel drive voltage, makes the voltage difference at capacitor C R1 two ends, first echo area less than the voltage difference at transmission area capacitor C T two ends.When pixel drive voltage is the positive polarity driving, coupled voltages VST can be less than common voltage VCOM, and when pixel drive voltage was the negative polarity driving, coupled voltages VST can be greater than common voltage VCOM, and the amount that coupled voltages VST changes can influence driving voltage V2, can represent by following formula:
Δ V 2 = C st 1 C R 1 + C st 1 + C gs 2 * Δ V st
Wherein, C St1The capacitance of expression memory capacitance CST1, C R1The capacitance of the expression first reflection capacitor C R1, C Gs2Stray capacitance (PLSCONFM C between grid-source electrode of expression transistor M301 Gs2Explanation).
Next, further specify the driving method of present embodiment with oscillogram, Fig. 4 B is the signal waveforms according to the 3rd embodiment.The corresponding signal indication pixel drive signal of data line DL, when sweep trace SL activation, data line DL namely exports corresponding pixel drive voltage to corresponding half-transmitting half-reflecting display unit, thinks that above-mentioned image element circuit 310 is example.Data line DL can charge with transmission area 203 to first echo area 201, represents with driving voltage V1, V2 respectively at the voltage on transmission area 203 and 201 both sides, first echo area.If coupled voltages VST equals common voltage VCOM, then driving voltage V1, V2 equate.In the present embodiment, coupled voltages VST can drop among the T1 during positive polarity drives and be lower than common voltage VCOM, rises among the T2 to be higher than common voltage VCOM during driving for negative polarity.Therefore, driving voltage V2 can because coupled voltages VST and during positive polarity drives T1 be lower than driving voltage V1, during negative polarity drives, be higher than driving voltage V2 among the T2.
Influence via coupled voltages VST, make the suffered essence cross-pressure of liquid crystal in first echo area 201 lower, so the curve C 201 of first echo area 201 can further influence the reflectivity of whole half-transmitting half-reflecting display unit 200, shown in Fig. 4 C toward moving to right.Fig. 4 C is according to the light relative intensity of third embodiment of the invention and voltage curve figure.By adjusting the voltage potential of coupled voltages VST, the just position of fine-tuning curve C 20.While comparison diagram 4C and Fig. 2 B, just can obviously find out can be more near curve C 203 through coupling the revised curve C 20 of voltage VST.In other words, the driving method of integrating the half-transmitting half-reflecting display unit structure of second embodiment and the 3rd embodiment can more effective matched curve C20 and curve C 203, makes the light reflectance of half-transmitting half-reflecting display unit and transmissivity have close change in voltage relation.
In addition, in another embodiment of the present invention, coupled voltages VST also can be applied to transmission area, is coupled to driving voltage V1 via the memory capacitance CST1 of transmission area, but its voltage potential needs anti-phase adjustment, has the effect of matched curve equally.Comprehensive speech, utilize coupled voltages VST can adjust the liquid crystal cross-pressure of echo area or transmission area, make the light reflectance of same half-transmitting half-reflecting display unit and light transmittance close, and reach the effect of improving display quality.Those skilled in the art via of the present invention open, should know the mode of all the other application by inference easily, do not add tired stating at this.
The present invention sets up second echo area at transmission area, and join the pixel drive voltage that coupled voltages is adjusted the echo area, make light reflectance and light transmittance curve in the half-transmitting half-reflecting display unit more close, effectively improve the display effect of semi-transmission semi-reflection LCD.
Though the present invention with preferred embodiment openly as above; right its is not for restriction the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.

Claims (8)

1.一种半透射半反射显示单元，包括：1. A semi-transmissive and semi-reflective display unit, comprising: 第一反射区，用于显示第一影像，所述第一反射区至少包括第一反射电极、第一绝缘层、第一反射区电容以及第一存储电容，其中所述第一反射电极形成于第一基板之上，所述第一绝缘层则形成于所述第一反射电极与所述第一基板之间；The first reflective area is used to display the first image, the first reflective area at least includes a first reflective electrode, a first insulating layer, a first reflective area capacitor and a first storage capacitor, wherein the first reflective electrode is formed on On the first substrate, the first insulating layer is formed between the first reflective electrode and the first substrate; 透射区，用于显示第二影像，所述透射区至少包括透明电极、第二反射电极、透射区电容、第二反射区电容以及第二存储电容，所述透明电极电连接至所述第二反射电极并形成于所述第一基板之上；The transmissive area is used to display the second image, the transmissive area at least includes a transparent electrode, a second reflective electrode, a capacitor in the transmissive area, a capacitor in the second reflective area, and a second storage capacitor, and the transparent electrode is electrically connected to the second reflective electrodes are formed on the first substrate; 第一晶体管，耦接至所述第一反射区与数据线之间；以及a first transistor, coupled between the first reflective region and the data line; and 第二晶体管，耦接至所述透射区与所述数据线之间；a second transistor, coupled between the transmissive region and the data line; 其中，所述第一晶体管与所述第二晶体管的栅极耦接于同一扫描线；Wherein, the gates of the first transistor and the second transistor are coupled to the same scan line; 其中，所述第一反射区与所述透射区分别具有第二基板、共用电极以及液晶层，所述共用电极形成于所述第二基板之上并邻近于所述液晶层，所述液晶层位于所述第一基板与所述第二基板之间，所述第一反射区与所述透射区相邻，且所述第二反射电极形成第二反射区；Wherein, the first reflective area and the transmissive area respectively have a second substrate, a common electrode and a liquid crystal layer, the common electrode is formed on the second substrate and adjacent to the liquid crystal layer, and the liquid crystal layer Located between the first substrate and the second substrate, the first reflective region is adjacent to the transmissive region, and the second reflective electrode forms a second reflective region; 其中，所述第一反射区与所述透射区分别由所述第一晶体管、所述第二晶体管所控制，且所述第一反射电极设置于所述第一绝缘层之上，在所述第一反射区中没有等效的绝缘层电容，所述透射区中的所述透射区电容、所述第二反射区电容以及所述第二存储电容的一端耦接于所述第二晶体管的源极端，而所述第一反射区中的所述第一反射区电容与所述第一存储电容的一端耦接于所述第一晶体管的源极端；Wherein, the first reflective region and the transmissive region are respectively controlled by the first transistor and the second transistor, and the first reflective electrode is arranged on the first insulating layer, on the There is no equivalent insulation layer capacitance in the first reflective region, and one terminal of the transmissive region capacitance, the second reflective region capacitance and the second storage capacitor in the transmissive region is coupled to the second transistor a source terminal, and one end of the first reflective region capacitor in the first reflective region and the first storage capacitor is coupled to the source terminal of the first transistor; 其中，所述第一反射区与所述透射区两区域的像素电极由所述第一晶体管、所述第二晶体管分开，并通过所述第一存储电容与所述第二存储电容分别调整所述第一反射区与所述透射区驱动时的液晶跨压；Wherein, the pixel electrodes in the first reflective region and the transmissive region are separated by the first transistor and the second transistor, and the first and second storage capacitors are used to adjust the pixel electrodes respectively. Liquid crystal cross-voltage when the first reflective region and the transmissive region are driven; 其中，像素驱动电压被提供至所述透射区与所述第一反射区；耦合电压被提供而经由所述第一存储电容耦合至所述第一反射区；以及所述耦合电压被调整，以调整所述第一反射区电容两端的电压差；Wherein, a pixel driving voltage is provided to the transmissive region and the first reflective region; a coupling voltage is provided to couple to the first reflective region via the first storage capacitor; and the coupling voltage is adjusted to adjusting the voltage difference across the capacitor in the first reflection area; 其中，在所述耦合电压被调整时，当所述像素驱动电压为正极性驱动时，使所述耦合电压小于共用电压；以及当所述像素驱动电压为负极性驱动时，使所述耦合电压大于所述共用电压。Wherein, when the coupling voltage is adjusted, when the pixel driving voltage is driven with positive polarity, make the coupling voltage less than the common voltage; and when the pixel driving voltage is driven with negative polarity, make the coupling voltage greater than the common voltage. 2.如权利要求1所述的半透射半反射显示单元，其中所述透射区还包括：2. The transflective display unit according to claim 1, wherein the transmissive area further comprises: 第二绝缘层，形成于所述第一基板与所述透明电极之间。The second insulating layer is formed between the first substrate and the transparent electrode. 3.如权利要求1所述的半透射半反射显示单元，其中所述第二基板为彩色滤光片的玻璃基板。3. The transflective display unit according to claim 1, wherein the second substrate is a glass substrate of a color filter. 4.如权利要求1所述的半透射半反射显示单元，其中所述第一反射电极与所述第二反射电极由铝所形成。4. The transflective display unit as claimed in claim 1, wherein the first reflective electrode and the second reflective electrode are formed of aluminum. 5.如权利要求1所述的半透射半反射显示单元，其中所述第一反射区的相位延迟量为四分之一个光波长。5. The transflective display unit as claimed in claim 1, wherein the phase retardation of the first reflective region is a quarter of the light wavelength. 6.如权利要求1所述的半透射半反射显示单元，其中所述透射区的相位延迟量为二分之一个光波长。6. The transflective display unit according to claim 1, wherein the phase retardation of the transmissive region is half of a light wavelength. 7.如权利要求1所述的半透射半反射显示单元，其中所述第一反射区与所述透射区的液晶厚度相同。7. The transflective display unit as claimed in claim 1, wherein the thickness of the liquid crystal in the first reflective region is the same as that in the transmissive region. 8.一种半透射半反射液晶显示装置，包括：8. A semi-transmissive and semi-reflective liquid crystal display device, comprising: 第一基板，包括：A first substrate comprising: 反射显示区，包括第一反射电极、第一绝缘层、第一反射区电容以及第一存储电容；以及A reflective display area, including a first reflective electrode, a first insulating layer, a first reflective area capacitor, and a first storage capacitor; and 透射显示区，包括透明电极、第二反射电极、透射区电容、第二反射区电容以及第二存储电容，其中所述第二反射电极位于所述透明电极之中；A transmissive display area, including a transparent electrode, a second reflective electrode, a capacitor in the transmissive area, a capacitor in the second reflective area, and a second storage capacitor, wherein the second reflective electrode is located in the transparent electrode; 第二基板，包括共用电极；a second substrate including a common electrode; 液晶层，形成于所述第一基板与所述第二基板之间；a liquid crystal layer formed between the first substrate and the second substrate; 第一晶体管，耦接至所述反射显示区与数据线之间；以及a first transistor coupled between the reflective display area and the data line; and 第二晶体管，耦接至所述透射区与所述数据线之间；a second transistor, coupled between the transmissive region and the data line; 其中，所述第一晶体管与所述第二晶体管的栅极耦接于同一扫描线；Wherein, the gates of the first transistor and the second transistor are coupled to the same scan line; 其中，所述反射显示区与所述透射区分别由所述第一晶体管、所述第二晶体管所控制，且所述第一反射电极设置于所述第一绝缘层之上，在所述反射显示区中没有等效的绝缘层电容，所述透射区中的所述透射区电容、所述第二反射区电容以及所述第二存储电容的一端耦接于所述第二晶体管的源极端，而所述反射显示区中的所述第一反射区电容与所述第一存储电容的一端耦接于所述第一晶体管的源极端；Wherein, the reflective display area and the transmissive area are respectively controlled by the first transistor and the second transistor, and the first reflective electrode is arranged on the first insulating layer, and the reflective There is no equivalent insulating layer capacitance in the display area, and one terminal of the transmission area capacitance, the second reflection area capacitance, and the second storage capacitance in the transmission area is coupled to the source terminal of the second transistor , and one end of the first reflective region capacitor in the reflective display region and the first storage capacitor is coupled to the source terminal of the first transistor; 其中，所述反射显示区与所述透射区两区域的像素电极由所述第一晶体管、所述第二晶体管分开，并通过所述第一存储电容与所述第二存储电容分别调整所述反射显示区与所述透射区驱动时的液晶跨压；Wherein, the pixel electrodes in the reflective display area and the transmissive area are separated by the first transistor and the second transistor, and the first and second storage capacitors are used to adjust the Liquid crystal cross-voltage when the reflective display area and the transmissive area are driven; 其中，像素驱动电压被提供至所述透射显示区与所述反射显示区；耦合电压被提供而经由所述第一存储电容耦合至所述反射显示区；以及所述耦合电压被调整，以调整所述第一反射区电容两端的电压差；Wherein, a pixel driving voltage is provided to the transmissive display area and the reflective display area; a coupling voltage is provided to couple to the reflective display area via the first storage capacitor; and the coupling voltage is adjusted to adjust The voltage difference between the two ends of the capacitor in the first reflection area; 其中，在所述耦合电压被调整时，当所述像素驱动电压为正极性驱动时，使所述耦合电压小于共用电压；以及当所述像素驱动电压为负极性驱动时，使所述耦合电压大于所述共用电压。Wherein, when the coupling voltage is adjusted, when the pixel driving voltage is driven with positive polarity, make the coupling voltage less than the common voltage; and when the pixel driving voltage is driven with negative polarity, make the coupling voltage greater than the common voltage.
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