CN101572993A - Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way - Google Patents
Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way Download PDFInfo
- Publication number
- CN101572993A CN101572993A CNA2008100247013A CN200810024701A CN101572993A CN 101572993 A CN101572993 A CN 101572993A CN A2008100247013 A CNA2008100247013 A CN A2008100247013A CN 200810024701 A CN200810024701 A CN 200810024701A CN 101572993 A CN101572993 A CN 101572993A
- Authority
- CN
- China
- Prior art keywords
- metal substrate
- conducting
- plasma
- gas
- conducting wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a method for forming a conducting wire on an insulated heat-conducting metal substrate in a vacuum sputtering way, which comprises the following steps: firstly, the insulated heat-conducting metal substrate is provided; secondly, the metal substrate is arranged in a plasma reaction chamber and gas mixture mixed with high subversive gas is led into the plasma reaction chamber, and the surface of the metal substrate is irregularly corroded to form nanometer surface roughness; thirdly, plasma chemical vapor disposition is performed in the plasma reaction chamber to produce radical plasmas, and laminated high heat-conducting coating is form on the surface of the metal substrate; fourthly, high heat-conducting insulating glue is coated; fifthly, the outer layer of the metal substrate on which the laminated high heat-conducting coating is formed is sputtered with a metal conducting layer and a metal protecting layer; sixthly, a conductor part of an etch-resisting film shielding circuit diagram is etched to remove a nonconductor part and then an etch-resisting film is removed; seventhly, liquid photosensitive welding-resisting ink is printed. The invention has simple process, best heat conduction and more environmental-friendly process.
Description
[technical field]
The present invention is a kind of method that forms the conducting wire on insulated substrate, particularly adopts vacuum splashing and plating technology to form the method for conducting wire on insulated heat-conducting metal substrate.
[background technology]
Tradition insulating heat-conductive substrate, as FR4 printed circuit board (PCB) (PCB), thermal conductivity (K) is about 0.36W/mK, its shortcoming is that hot property is relatively poor, and the conducting wire preparation method is for spraying conductive paint, electroless copper in regular turn, etching the printed foil circuit again on traditional insulating heat-conductive substrate on plastic base, and wherein the shortcoming of electroless copper is to relate to environmental problem such as waste water treatment in the processing procedure.
Have not yet to see and on insulated heat-conducting metal substrate, directly adopt the vacuum splashing and plating mode to make the method for conducting wire.
[summary of the invention]
The object of the invention is to provide the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate, and making technology is simple, less contaminated environment.
For reaching above-mentioned purpose, vacuum splashing and plating forms the method for conducting wire on a kind of insulated heat-conducting metal substrate provided by the invention, and may further comprise the steps: (1) provides an insulated heat-conducting metal substrate; (2) this substrate is inserted in the plasma reaction chamber and feed the admixture of gas that is mixed with highly aggressive gas, scrambling ground is done on the surface of this metal base corroded to form the nanoscale surface roughness; (3), produce the free radical plasma, and form laminated high heat-conducting coating on the surface of this metal base with this plasma reaction chamber ionic medium chemical vapour deposition (CVD); (4) coating one deck high heat conductive insulating glue; (5) metal conducting layer and metal protection layer on the outer sputter of the metal base of laminated high heat-conducting coating; (6) conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again; (7) printing liquid photosensitive welding resistant printing ink.
Compared with prior art, the present invention adopts the combination of vacuum splashing and plating and etching technique to form the conducting wire, and manufacturing process is simple, and thermal conductivity is good, and relatively environmental protection of technology.
[description of drawings]
Fig. 1 forms the process chart of the method for conducting wire for vacuum splashing and plating on the insulated heat-conducting metal substrate of the present invention.
[embodiment]
The method of vacuum splashing and plating formation conducting wire is as follows on the insulated heat-conducting metal substrate of the present invention:
1, provides a metal base, this base material can be copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or aluminium alloy, and the surface of this metal base is strip, plane, curved surface or 3D shape, and this base material carried out pre-treatment, specifically comprise steps such as degreasing, pickling, cleaning, make its cleaning surfaces, and this metal base is placed plasma reaction chamber, at this moment, metallic substrate surface can be with 20～30 volts negative voltage.
Above-mentioned plasma reaction chamber can be batch or continous way (in-line) chemical vapor deposition reaction chamber.
2, plasma pre-treatment, the admixture of gas that is mixed with highly aggressive gas is fed in this plasma reaction chamber, scrambling is done on the surface of this metal base corroded, wherein, comprise also in this admixture of gas that reactant gas (can be O to form the nanoscale surface roughness
2Or N
2) or inert gas (can be Ar or He).
Above-mentioned highly aggressive gas can be CF
4, CF
2Cl
2Or Cl
2One or more.
3, plasma gas-phase deposit, this metal base carries out PCVD in this plasma reaction chamber, so that its surface forms laminated high heat-conducting coating, wherein, this high heat conducting coating formed with plasma interface conversion layer and plasma high heat conductive insulating stacking adding, and plasma gas-phase deposit specifically comprises following two fine division step: plasma gas-phase deposit graded bedding and plasma gas-phase deposit high heat conductive insulating layer.
Plasma gas-phase deposit graded bedding: will be mixed with silicon source predecessor (Precursor, as TMS) admixture of gas feed in this plasma reaction chamber, produce the first free radical plasma by this admixture of gas of plasma activation in plasma reaction chamber, the first free radical plasma produces plasma interface conversion layer (for example silicon dioxide) against the surface that low-pressure vapor phase is diffused in this metal base.The plasma interface conversion layer can be the hydrophobic or hydrophilic characteristic surface who converts may command and homogeneous in metal surface, and can reduce surface roughness by big spoke.The thickness of this plasma interface conversion layer is from about 10 nanometers to 10 micron, and the structure of this plasma interface conversion layer can be monofilm or multilayer film, can change at any time that the gas phase composition is formed and the superposition or the gradual change that form plasma deposition of different nature interface conversion layer.
More than, also comprise reactant gas in the admixture of gas, and reactant gas comprises oxygen or steam.
Plasma gas-phase deposit high heat conductive insulating layer: the admixture of gas that will be mixed with high heat conduction chemistry precursors feeds in this plasma reaction chamber, in plasma reaction chamber, produce the second free radical plasma by this admixture of gas of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer, wherein, the high heat conductive insulating layer that is produced can be AlN, BeO or Ta
2O
5The high heat conductive insulating layer thickness is from about 20 nanometers to 10 micron.
The high heat conduction chemistry precursors that includes metal or pottery in the above-mentioned gas mixture is (as the precursors Ta (EtCp) of Ta
2(CO) H EtCp or Al (CH
3)
3), reactant gas is (as O
2, N
2, H
2O or NH
3) and inert gas (as Ar or He).
4, coating one layer thickness is the high heat conductive insulating glue of 5～25 μ m, this high heat conductive insulating glue can be one of ultraviolet hardening, heat curing-type or ultraviolet hardening mixing heat curing-type, and its pyroconductivity＞2～3W/ (mK), cracking temperature＞200 ℃, thermal resistance Buddhist nun is between 0.3～0.7W/ (mK), and coating can be adopted rotary coating (Spin) or dip-coating (Dip) or printing (Print) mode.
More than, the high-heat-conductivity glue insulation is to make by adding high conduction material in the insulating cement.
5, in generation metal conducting layer and metal protection layer on the outer sputter of metal base of aluminium nitride film arranged, wherein, the step of jet-plating metallization conductive layer and metal protection layer is as follows:
The concrete steps of jet-plating metallization conductive layer: have the metal base of aluminium nitride film to insert in the vacuum chamber generation, be evacuated to 10
-5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL;
The concrete steps of jet-plating metallization overcoat: have the metal base of copper film to insert another vacuum chamber sputter, feed argon gas and maintain 1～3 * 10
-3Torr starts sputter gold target material or nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with gold film or nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of golden film or nickel gold thin film.
6, etch-resisting film is with the mode of printing or the conductor part of the mode screened circuit figure of exposure imaging, and the non-conductor part is removed in etching, sloughs etch-resisting film again; Wherein, etch recipe is: phosphoric acid 500ml/L, glacial acetic acid 400ml/L, nitric acid 100ml/L, and etch temperature is a room temperature, etching period is 60-120s.
7, printing liquid photosensitive welding resistant printing ink, it is roasting in advance to put into baking oven, and roasting in advance temperature is controlled at 75 ℃, and the roasting in advance time is controlled at 30min, and by ultraviolet light polymerization, the parameter of ultraviolet light polymerization is 800mj/cm then
2, 3m/s, the time of ultraviolet light polymerization is 120s.
Claims (20)
1, the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate is characterized in that may further comprise the steps:
(1) provides an insulated heat-conducting metal substrate;
(2) this substrate is inserted in the plasma reaction chamber and feed the admixture of gas that is mixed with highly aggressive gas, scrambling ground is done on the surface of this metal base corroded to form the nanoscale surface roughness;
(3), produce the free radical plasma, and form laminated high heat-conducting coating on the surface of this metal base with this plasma reaction chamber ionic medium chemical vapour deposition (CVD);
(4) coating one deck high heat conductive insulating glue;
(5) metal conducting layer and metal protection layer on the outer sputter of the metal base of laminated high heat-conducting coating;
(6) conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again;
(7) printing liquid photosensitive welding resistant printing ink.
2, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the surface of this metal base is strip, plane, curved surface or 3D shape.
3, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: this metal base is one of copper alloy, stainless steel, Ni-Ti alloy, magnesium alloy or aluminium alloy.
4, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: this plasma reaction chamber is batch or continous way chemical vapor deposition reaction chamber.
5, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: this metal base has passed through pre-treatment before entering plasma reaction chamber, pre-treatment comprises degreasing, pickling, cleaning.
6, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1 is characterized in that: also comprise reactant gas or inert gas in the admixture of gas in the step (2).
7, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the highly aggressive gas in the step (2) is CF
4, CF
2Cl
2, Cl
2In one or more.
8, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the high heat conducting coating in the step (3) comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and laminated high heat-conducting coating is that compound storehouse forms.
9, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 8, it is characterized in that: the concrete steps of step (3) comprising:
(3-1) admixture of gas that will be mixed with silicon source predecessor feeds in this plasma reaction chamber, produce the first free radical plasma by this admixture of gas of plasma activation in plasma reaction chamber, the first free radical plasma produces the plasma interface conversion layer against the surface that low-pressure vapor phase is diffused in this metal base;
(3-2) admixture of gas of chemical precursors that will be mixed with metal or pottery feeds in this plasma reaction chamber, produce the second free radical plasma in plasma reaction chamber by this admixture of gas of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer.
10, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the admixture of gas of step (3-1) also comprises reactant gas, reactant gas is gaseous oxygen or steam.
11, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the admixture of gas of step (3-2) also comprises reactant gas and inert gas.
12, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 14, it is characterized in that: the reactant gas of step (3-2) is O
2, N
2, H
2O, NH
3
13, the manufacture method of insulation heat-conducting metal substrate according to claim 1 is characterized in that: high heat conductive insulating glue is one of ultraviolet hardening, heat curing-type or ultraviolet hardening mixing heat curing-type in the step (4).
14, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the step of jet-plating metallization conductive layer comprises in the step (5), there is the metal base of aluminium nitride film to insert in the vacuum chamber generation, is evacuated to 10
-5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL.
15, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 14, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (5), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
3Torr starts sputter gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, carry out gold-platedly, golden film thickness is controlled about 0.1～1 μ m.
16, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 14, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (5), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
-3Torr starts sputter nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of nickel gold thin film.
17, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch recipe in the step (6) is: phosphoric acid 500ml/L, glacial acetic acid 400ml/L, nitric acid 100ml/L, etch temperature is a room temperature, and etching period is 60-120s.
18, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (6) is shielded in the mode of printing.
19, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (6) is shielded in the mode of exposure imaging.
20, the method for vacuum splashing and plating formation conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: step also comprises after (7), it is roasting in advance to put into baking oven, pre-roasting temperature is controlled at 75 ℃, the pre-roasting time is controlled at 30min, pass through ultraviolet light polymerization, the parameter 800mj/cm of ultraviolet light polymerization then
2, 3m/s, the time of ultraviolet light polymerization is 120s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810024701A CN101572993B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810024701A CN101572993B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101572993A true CN101572993A (en) | 2009-11-04 |
| CN101572993B CN101572993B (en) | 2012-10-03 |
Family
ID=41232185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810024701A Expired - Fee Related CN101572993B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101572993B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101608985A (en) * | 2009-07-27 | 2009-12-23 | 上海市机械制造工艺研究所有限公司 | Coating shows a display packing of etchant and multi-coated coating institutional framework |
| CN103596380A (en) * | 2013-11-07 | 2014-02-19 | 溧阳市江大技术转移中心有限公司 | Method for plating insulating thermal conductive plate with copper |
| WO2015006907A1 (en) * | 2013-07-15 | 2015-01-22 | 深圳崇达多层线路板有限公司 | Resistance welding pretreatment process and preparation process of high-frequency pcb |
| CN112203427A (en) * | 2020-10-15 | 2021-01-08 | 深圳市顺华智显技术有限公司 | Circuit board and method for preventing circuit from being oxidized and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033558A (en) * | 2000-07-18 | 2002-01-31 | Matsushita Electric Ind Co Ltd | Circuit board and its manufacturing method |
| JP3956204B2 (en) * | 2002-06-27 | 2007-08-08 | 日本特殊陶業株式会社 | MULTILAYER RESIN WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME, METAL PLATE FOR LAMINATED RESIN WIRING BOARD |
| JP5413707B2 (en) * | 2005-06-06 | 2014-02-12 | Ｄｏｗａエレクトロニクス株式会社 | Metal-ceramic composite substrate and manufacturing method thereof |
-
2008
- 2008-04-29 CN CN200810024701A patent/CN101572993B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101608985A (en) * | 2009-07-27 | 2009-12-23 | 上海市机械制造工艺研究所有限公司 | Coating shows a display packing of etchant and multi-coated coating institutional framework |
| WO2015006907A1 (en) * | 2013-07-15 | 2015-01-22 | 深圳崇达多层线路板有限公司 | Resistance welding pretreatment process and preparation process of high-frequency pcb |
| CN104737629A (en) * | 2013-07-15 | 2015-06-24 | 深圳崇达多层线路板有限公司 | Resistance welding pretreatment process and preparation process of high-frequency PCB |
| CN104737629B (en) * | 2013-07-15 | 2017-12-01 | 深圳崇达多层线路板有限公司 | Frequency PCB welding resistance pre-treating technology and its preparation technology |
| CN103596380A (en) * | 2013-11-07 | 2014-02-19 | 溧阳市江大技术转移中心有限公司 | Method for plating insulating thermal conductive plate with copper |
| CN112203427A (en) * | 2020-10-15 | 2021-01-08 | 深圳市顺华智显技术有限公司 | Circuit board and method for preventing circuit from being oxidized and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101572993B (en) | 2012-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4402998A (en) | Method for providing an adherent electroless metal coating on an epoxy surface | |
| CN1669788A (en) | Metallized polyimide film | |
| CN101572993B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| JP2006049893A (en) | Manufacturing method of laminated structure for flexible circuit board | |
| TWI389618B (en) | A two layer film, a method of manufacturing a two layer film, and a method of manufacturing a printed circuit board | |
| CN102917534A (en) | DLC (Diamond like Carbon) thin film coating-based ceramic substrate | |
| CN101572997B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| CN101572999B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| KR100870971B1 (en) | Method for manufacturing substrate of metal pcb using high rate and high density magnetron sputtering way | |
| JP2000073170A (en) | Production of metallized substrate material | |
| CN102740591A (en) | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof | |
| CN101572998B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| CN202931664U (en) | Double-faced aluminium circuit board with ultrahigh heat conductivity | |
| CN101572994B (en) | Method for forming conducting wire on radiating substrate in a vacuum sputtering way | |
| CN101572995A (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| CN101298673B (en) | Preparation of insulated heat conducting metal substrate | |
| CN101572996B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| CN101298676B (en) | Manufacturing method of insulation heat-conducting metal substrate | |
| CN109666912B (en) | Hf/TiBxMethod for producing an anti-corrosion multilayer coating | |
| JP2019512601A (en) | Plasma deposition method | |
| CN101573001B (en) | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way | |
| CN103813642B (en) | Method for forming conductive circuit on insulated metal substrate | |
| KR101211559B1 (en) | A method for preparing a electromagnetic interference film | |
| JPH05299820A (en) | Flexible printed wiring board | |
| JP2010018855A (en) | Surface-treated copper foil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121003 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |